0022287033;中文规格书,Datasheet资料

MB10S — Bridge Rectifier

© 2010 Fairchild Semiconductor Corporation

MB10S Rev. A01 July 2010

MB10S

Bridge Rectifier

Features

•Low leakage

•Surge overload rating : 35 amperes peak.

•Ideal for printed circuit board.

•UL certified, UL #E111753 and E326243.

Absolute Maximum Ratings * T

A = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

* Device mounted on PCB with 0.5" x 0.5" (13 x 13 mm) lead length

Electrical Characteristics T

A = 25°C unless otherwise notedSymbolParameterValueUnits

V

RRMMaximum Repetitive Reverse Voltage1000V

V

RMSMaximum RMS Bridge Input Voltage700V

V

RDC Reverse Voltage (Rated V

R)1000V

I

F(AV)Average Rectified Forward Current, @ T

A = 50°C

On Glass-epoxy P.C.B.

On Aluminum substrate0.5

MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features

• Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT2907A) • Ideal for Low Power Amplification and Switching • Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) • “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data

• Case: SOT-23 • Case Material: Molded Plastic, “Green” Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.008 grams (approximate)

EBC Top ViewDevice Schematic Maximum Ratings @TA = 25°C unless otherwise specified

SymbolVDSVGSIDMTJ, TSTGSymbolTypMax360415400460RθJL300350Maximum Junction-to-Lead CSteady-State°C/WThermal CharacteristicsParameterUnitsMaximum Junction-to-Ambient At ≤ 10sRθJA°C/WMaximum Junction-to-Ambient ASteady-State°C/WWTA=70°C0.19Junction and Storage Temperature Range-55 to 150°CPower Dissipation ATA=25°CPD0.3ATA=70°C0.7Pulsed Drain Current B5Continuous Drain Current ATA=25°CID0.9Drain-Source Voltage20VGate-Source Voltage±8VAbsolute Maximum Ratings TA=25°C unless otherwise notedParameterMaximumUnitsAO7800Dual N-Channel Enhancement Mode Field Effect TransistorFeaturesVDS (V) = 20VID = 0.9 A (VGS = 4.5V)RDS(ON) < 300mΩ (VGS = 4.5V)RDS(ON) < 350mΩ (VGS = 2.5V)RDS(ON) < 450mΩ (VGS = 1.8V)General DescriptionThe AO7800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters.It is ESD protected. Standard Product AO7800 is Pb-free (meets ROHS & Sony 259 specifications). AO7800L is a Green Product ordering option. AO7800 and AO7800L are electrically identical.SC-70-6(SOT-323)Top ViewD1

Bezeichnung :description :A35,0 ± 1,0mmB1,5 ± 0,15mmC8,0 ± 0,3mmD8,0 ± 0,3mmE30,0 ± 0,7mmEigenschaften / propertiesWert / valueEinheit / unitTol.Impedanz @ 1 Wg./impedance @ 1 turnImpedanz @ 1 Wg./impedance @ 1 turnImpedanz @ 2 Wg./impedance @ 2 turnImpedanz @ 2 Wg./impedance @ 2 turn33%+ 20°C+ 140°C23-pol.SMUUpdate06-10-12LFRoHS update04-10-11JHVersion 100-12-06NameÄnderung / modificationDatum / dateKunde / customerFreigabe erteilt / general release: C B Elektrische Eigenschaften / electrical properties: E Testbedingungen / test conditions: Luftfeuchtigkeit / humidity: Umgebungstemperatur / temperature:Betriebstemp. / operating temperature: -25°C ~ + 125°C F Werkstoffe & Zulassungen / material & approvals:3 W 800für Flachbandkabel / for flat cable [max]:Lagertemperatur / storage temperature: -55°C ~ + 125°C Spezifikation für Freigabe / specification for releaseDATUM / DATE : 2006-10-12