摘要
多晶硅是硅产品产业链中的一个非常重要的中间产品，是制造硅抛光片、太阳能电池及高纯硅制品的主要原料，是信息产业和新能源基础的原材料。总的来说，目前国际上多晶硅生产主要的传统工艺有:改良西门子法、硅烷法和流化床法。其中改良西门子工艺生产的多晶硅的产能最大，约占全世界总产能的80% 。
本论文主要研究改良西门子法（又称闭环式三氯氢硅氢还原法）生产多晶硅，,与其他的方法相比其更具优越性.。改良西门子法是用氯气和氢气合成氯化氢(或外购氯化氢)，氯化氢和工业硅粉(粗硅)在高温下合成三氯氢硅，然后对三氯氢硅进行化学精制提纯达到9个9以上，其中金属杂质总含量应降到0. 1 x 10 -9以下，提纯精馏后的三氯氢硅在氢还原炉内进行CVD（化学沉淀法）反应生产高纯多晶硅。改良西门子法生产多晶硅不但效率高而且环保。国内外现有的多晶硅厂绝大部分采用此法生产太阳能级与电子级多晶硅。
关键词：多晶硅；改良西门子法；提纯；还原
Improved method of polysilicon production of
Siemens technology research
Polycrystalline silicon of the industrial grade silicon product is a very important intermediate products, is manufacturing silicon crystal, flowing and high purity silicon solar battery products of the main raw material, is the information industry and new energy foundation of raw materials. In general, the international polysilicon production main traditional process are: improved Siemens method, silane method and fluidized bed method. Which improved the production of Siemens polysilicon production capacity of the largest, accounts for about 80% of the world total.
This thesis mainly research improved Siemens method (also called partially closed loop type hydrogen silicone hydrogen reduction method) production of polysilicon, and other methods more advantages than the Siemens method is improved with chlorine gas and hydrogen synthesis hydrogen (or outsourcing hydrogen), hydrogen and industrial silicon powder (coarse silicon) under high temperature hydrogen synthesis abroad.emphasis silicon, and then to the different chemical refining purified hydrogen silicon to nine and above, including metal impurity total content should be down to 0. 1 x 10 -9 the following, purification and distillation of the hydrogen in the different after silicon hydrogen reduction furnace for CVD chemical precipitation) reaction production high purity polycrystalline silicon. Improved Siemens method not only high efficiency and production of polysilicon environmental protection. The current available polycrystalline silicon factory most use this law in the production level and electronics polycrystalline silicon.
Keywords: polysilicon; Improved Siemens method; Purification process; reduction
摘要............................................................... I Abstract.......................................................... II 第1章绪论.. (1)
1.1 目前多晶硅的发展前景 (1)
1.2 多晶硅行业发展趋势预测 (1)
1.3 国内多晶硅企业发展面临的可能风险 (2)
第2章多晶硅的生产方法 (4)
2.1 多晶硅的概括 (4)
2.2 硅烷法 (4)
2.3 流化床法 (5)
2.4 改良西门子法 (6)
第3章改良西门子法介绍与对比 (9)
3.1 改良西门子法介绍 (9)
3.2 多晶硅生产过程中的产污分析 (13)
3.3 改良西门子法与其它方法的对比 (14)
3.3.1改良西门子法与西门子法的比较 (14)
3.3.2改良西门子法与硅烷法比较 (15)
结论 (16)
参考文献 (17)
致谢 (18)
