ExcelicsEPA060B-70DATA SHEETHigh Efficiency Heterojunction Power FETFeatures• NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +26dBm TYPICAL OUTPUT POWER• 9.0dB TYPICAL POWER GAIN AT 12 GHZ • 0.4 dB TYPICAL NOISE FIGURE AT 2GHz• 20 dB TYPICAL ASSOCIATED GAIN AT 2 GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si 3N 4 PASSIVATION• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITYApplications• High Dynamic Range LNA • DC to 18 GHzELECTRICAL CHARACTERISTICS (T a = 25 O C)SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNITP 1dB Output Power at 1dB Compression f=2GHzVds=6V, Ids=50% Idss f=12GHz24.0 26.0 25.5 dBm G 1dB Gain at 1dB Compression f=2GHz Vds=6V, Ids=50% Idss f=12GHz 17.0 7.0 19.0 9.0dB PAE Power Added Efficiency at 1dB Compression f=2GHz Vds=6V, Ids=50% Idss f=12GHz 5545% IP3 +5dBm P OUT /Tone (5V/50mA) f=2GHz (5V/90mA) 2831dBm NFNoise Figure (5V/50mA) f=2GHz(5V/90mA)0.4 0.6 dB G A Associated Gain (5V/50mA) f=2GHz(5V/90mA) 20.0 20.0 dB Idss Saturated Drain Current Vds=3V, Vgs=0V 110180250mA Gm Transconductance Vds=3V, Vgs=0V 120 190 mS Vp Pinch-off Voltage Vds=3V, Ids=2.0mA -1.0 -2.5 V BVgd Drain Breakdown Voltage Igd=1.0mA -10 -15 V BVgsSource Breakdown Voltage Igs=1.0mA-6-14VRthThermal Resistance 175* oC/W * Overall Rth depends on case mounting.MAXIMUM RATINGS AT 25O CSYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 VdsDrain-Source Voltage 10V6V VgsGate-Source Voltage -6V -3V IdsDrain Current Idss 110mA Igsf Forward Gate Current 30mA 5mAPin Input Power 23dBm@ 3dB CompressionTch Channel Temperature 175oC 150 o C TstgStorage Temperature-65/175o C -65/150 o CPtTotal Power Dissipation 780mW 650mWNote: 1 Exceeding any of the above ratings may result in permanent damage.2. Exceeding any of the above ratings may reduce MTTF below design goals.Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: All Dimensions In mils.66'*$O O /H D G V0L QEPA060B-70DATA SHEETHigh Efficiency Heterojunction Power FETTypical PerformanceNoise Figure &IP3S-PARAMETERS6V, 1/2 IdssFREQ --- S11 ------ S21 ------ S12 ------ S22 ---(GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.863 -58.2 12.375 135.5 0.026 63.8 0.523 -24.4 2.0 0.696 -101.1 9.063 104.4 0.039 49.7 0.433 -41.0 3.0 0.604 -132.0 6.850 82.3 0.049 43.5 0.388 -51.9 4.0 0.555 -159.5 5.508 63.6 0.055 39.1 0.360 -60.8 5.0 0.538 177.3 4.614 47.0 0.065 35.5 0.322 -70.3 6.0 0.534 160.5 4.002 31.8 0.074 30.5 0.288 -84.5 7.0 0.533 141.8 3.532 16.7 0.083 25.3 0.281 -98.4 8.0 0.540 125.9 3.168 2.3 0.092 19.2 0.254 -111.5 9.0 0.582 105.0 2.817 -12.9 0.101 11.6 0.235 -125.6 10.0 0.622 88.1 2.532 -28.1 0.108 2.7 0.220 -148.1 11.0 0.642 74.5 2.370 -43.9 0.119 -8.1 0.225 -176.6 12.0 0.674 60.3 2.195 -60.1 0.129 -19.3 0.238 155.7 13.0 0.727 47.7 1.970 -74.8 0.132 -30.2 0.244 130.0 14.0 0.764 36.4 1.758 -88.3 0.133 -40.6 0.263 110.6 15.0 0.776 22.6 1.618 -104.8 0.137 -54.2 0.316 90.1 16.0 0.790 8.5 1.441 -122.5 0.134 -69.5 0.358 66.2 17.0 0.781 -1.1 1.285 -135.3 0.133 -78.3 0.363 51.0 18.0 0.792 -9.8 1.221 -147.7 0.144 -91.0 0.396 41.9 19.0 0.811 -22.2 1.106 -163.8 0.142 -106.2 0.418 23.9 20.0 0.836 -32.5 1.016 -179.0 0.144 -121.0 0.445 6.7 21.0 0.800 -41.8 0.975 166.9 0.157 -134.6 0.461 -8.4 22.0 0.761 -54.5 0.941 152.3 0.176 -148.9 0.426 -22.5 23.0 0.800 -68.3 0.861 134.7 0.190 -167.5 0.399 -50.3 24.0 0.799 -80.2 0.764 117.1 0.204 173.5 0.417 -78.5 25.0 0.719 -98.1 0.751 103.1 0.239 157.7 0.451 -87.9 26.0 0.718 -119.4 0.750 85.7 0.291 137.6 0.450 -110.4EPA060B-70 @5V, 2GHz(P OUT /Tone = 5dBm)00.20.40.60.8020406080100120140Ids [mA]N F [d B ]10203040I P 3 [d B m ]NF IP3EPA060B-70DATA SHEETHigh Efficiency Heterojunction Power FETS-PARAMETERS5V,50maFREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---(GHz) MAG ANG MAG ANG MAG ANG MAG ANG1.0 0.948 -57.7 14.366 129.2 0.032 54.0 0.439 -48.42.0 0.739 -100.4 9.162 106.8 0.042 45.1 0.438 -44.93.0 0.656 -132.4 7.008 84.9 0.050 36.7 0.392 -56.74.0 0.619 -155.0 5.629 67.5 0.056 31.8 0.352 -64.75.0 0.597 -176.9 4.740 51.0 0.062 26.9 0.298 -74.46.0 0.577 162.1 4.086 35.5 0.069 22.1 0.284 -90.67.0 0.580 141.7 3.546 21.4 0.075 18.2 0.287 -96.48.0 0.616 122.1 3.145 6.6 0.081 11.3 0.264 -103.59.0 0.618 117.3 2.918 -7.4 0.088 4.0 0.148 -131.410.0 0.633 99.5 2.657 -22.4 0.097 -1.1 0.185 -169.411.0 0.673 76.6 2.345 -36.9 0.101 -10.0 0.208 -168.312.0 0.718 63.1 2.142 -50.5 0.108 -18.0 0.156 179.213.0 0.761 59.0 1.999 -65.3 0.117 -27.9 0.223 117.814.0 0.777 44.3 1.767 -81.5 0.118 -40.9 0.321 97.015.0 0.779 30.7 1.543 -91.8 0.115 -46.4 0.287 96.416.0 0.816 14.8 1.418 -107.4 0.117 -59.0 0.265 77.717.0 0.827 11.9 1.307 -123.3 0.121 -70.7 0.445 49.218.0 0.822 2.7 1.114 -132.8 0.114 -77.5 0.460 49.819.0 0.852 -9.8 1.090 -144.6 0.123 -87.1 0.424 38.220.0 0.868 -19.9 1.001 -158.4 0.122 -99.4 0.442 21.521.0 0.846 -31.4 0.911 -174.9 0.120 -114.7 0.576 9.422.0 0.838 -32.7 0.856 176.8 0.125 -121.6 0.515 9.923.0 0.860 -47.9 0.832 160.7 0.130 -137.4 0.446 -22.924.0 0.835 -66.2 0.763 141.8 0.128 -156.0 0.536 -40.825.0 0.819 -80.1 0.710 126.8 0.130 -170.6 0.536 -41.426.0 0.868 -78.4 0.699 111.8 0.145 174.2 0.383 -78.0EPA060B-70Noise ParametersVds=5V, Ids=50mAFreq. Gamma Opt Nfmin(GHz) (MAG) (ANG) (dB) Rn/502 0.46 44 0.45 0.114 0.35 96 0.55 0.086 0.23 165 0.75 0.068 0.27 -145 0.92 0.0810 0.35 -85 1.37 0.2312 0.46 -58 1.47 0.4414 0.58 -33 1.92 0.8916 0.68 -6 2.47 1.318 0.63 7 3.03 1.7820 0.68 33 3.24 1.8722 0.63 50 3.43 1.8124 0.67 92 3.65 1.5626 0.72 120 3.86 1.16。
ૻำჴިҽԖज़ϦљKIMPSION CORPORATION19644F., No.196, Sec.2, Chung Hsing Rd., Hsien Tien City, Taipei TEL: 886-2-29160715 E-mail: Kimpsion@FAX: 886-2-2916-070029160726Revised on 2/18/20051.Bin: Bin selected for crystal ኲՏ2.BT: Blank thickness3.C0: Static Capacitance4.C0/C1: Capacity ratio5.C1: Motional Capacitance6.CL: Load capacitance for specified frequency ਔޑ7.DATE: Measurement date stamp ਔϐВ8.DFL: FL@CL1-FL@CL2ॶ9.DLD1: MaxR/RR ϐߔ()10.D LD2: MaxR-MinR ϐനᆶനॶ11.D LD3: FirstR-LastR ϐಃᆶനॶ12.D LD4: MaxR/RR ϐനᆶϐΠϐК13.D LD5: FirstR/LastR ϐଆᆶനϐК()14.D LD6: MaxR/MinR ϐനᆶനϐК()15.D LD7: ((MaxR-MinR)/MaxR)*100 DLD2ᆶόϐനϐԭ16.D LDH: DLD Hysteresis MaxR/MinR ϐᅶᆶനϐК17.D LDH2: DLD Hysterisis MaxR-MinR DLD ǴനRᆶനRॶ18.D LDH2P: DLD Power level of Max Hysterisis MaxR-MinR DLD RᆶRॶനॶਔޑ19.D LDHP Show the power of worst Rmax/Rmin DLD(/)ॶനਔޑ20.D LDF: DLD Frequency at a specific DLD step Ǵӧ21.D LDP: DLD Power output at a specific DLD step Ǵ22.D LDR: DLD Resistance at a specific DLD step Ǵ23.F C: Fr/divisor FRа24.F DIF: FR-RAWFR or FL-RAWFR (based on first test)25.F DLD: MaxFR-MinFR ϐനᆶനFRϐৡॶ26.F DLDH: DLD Hysteresis MaxFR-MinFR ϐᅶᆶനFRϐॶ27.F FM: Frequency near specified frequency FR28.F L: FL@CL(Load frequency) (CL)29.F LR: FL @CL-FRᆶՍϐৡॶ30.F R: Series resonant frequency ()31.F RM: Resistance at specified resonant frequency ॶ(x3)32.F RR: FRM/RRॶᆶϐΠϐК33.I: Current into crystal ਔǴࢬॶ34.L: Motional inductance35.L FR: Last FR ϐനਔޑFRॶ36.L RR: Last R ϐനਔޑRrॶ37.O T: Overtone38.P WR: Power into crystal39.Q: Quality factor40.R AWF: Raw frequency41.R FOUT: RF output level RFՏྗ()42.R L: Resistance at FL ϐΠਔǴ43.R LD: DLD MaxR-RR RrॶᆶਔRrॶޑ44.R LD2: DLD MaxR ϐനRrॶ45.R LD3: DLD MinR ϐനRrॶ46.R R: Resistance47.S P50: Attenuation at 50 Ohm fixture relative to main modeа50ਔǴϐՏྗ(dB)48.S PDB: Attenuation at 12.5 Ohm fixture relative to main modeа12.5ਔǴϐՏྗ(dB)49.S PFL: Load Frequency of spur50.S PFR: Frequency of spur (ਔໆᆶॶϐф)51.S PRL: Max Spur resistance at Load Frequency52.S PRR: SpurR/RR ϐᆶЬϐ໔53.S PUR: Minimum SpurR54.S SDB: Spur Sweep peak attenuation relative to main modeϐ࣬ϐՏྗ55.S SDLF: Spur Sweep raw frequency of the local max for SSDLT56.S SDLT: Spur Sweep maximum of (local max – local min)57.S SF: Spur Sweep peak raw frequency ϐ҂58.S tatus: Status of crystal test59.T C: Time constant [ L / ( RR+Network Resistance )] ϐਔ໔60.T IME: Measurement time stamp ਔϐਔ໔61.T S: Trim sensitivity 1PfਔFL(Տ:ppm/Pf)ૻำჴިҽԖज़Ϧљ。
RF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETsDesigned for Class A or Class AB base station applications with frequenciesup to 1500 MHz. Suitable for analog and digital modulation and multicarrieramplifier applications.•Typical Two-Tone Performance @ 960 MHz, V DD = 28 Volts, I DQ =125 mA, P out = 10 Watts PEPPower Gain — 18 dBDrain Efficiency — 32%IMD — -37 dBc•Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CWOutput Power•Characterized with Series Equivalent Large-Signal Impedance Parameters•On-Chip RF Feedback for Broadband Stability•Qualified Up to a Maximum of 32 V DD Operation•Integrated ESD Protection•N Suffix Indicates Lead-Free Terminations•200°C Capable Plastic Package•In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.Table 1. Maximum RatingsRating Symbol Value Unit Drain-Source Voltage V DSS-0.5, +68Vdc Gate-Source Voltage V GS-0.5, +12Vdc Total Device Dissipation @ T C = 25°CDerate above 25°CP D61.40.35WW/°C Storage Temperature Range T stg-65 to +175°C Operating Junction Temperature T J200°C Table 2. Thermal CharacteristicsCharacteristic Symbol Value (1.2)Unit Thermal Resistance, Junction to CaseCase Temperature 80°C, 10 W PEPRθJC2.85°C/W1.MTTF calculator available at /rf. Select Tools/Software/Application Software/Calculators to accessthe MTTF calculators by product.2.Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to /rf.Select Documentation/Application Notes - AN1955.Document Number: MW6S010Rev. 1, 5/2005 Freescale SemiconductorTechnical Data2RF Device DataFreescale SemiconductorMW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1Table 3. ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JESD22-A114)1A Machine Model (per EIA/JESD22-A115)A Charge Device Model (per JESD22-C101)IIITable 4. Moisture Sensitivity LevelTest MethodologyRating Package Peak TemperatureUnit Per JESD 22-A113, IPC/JEDEC J-STD-0201260°CTable 5. Electrical Characteristics (T C = 25°C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOff CharacteristicsZero Gate Voltage Drain Leakage Current (V DS = 68 Vdc, V GS = 0 Vdc)I DSS ——10µAdc Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc)I DSS ——1µAdc Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc)I GSS——1µAdcOn CharacteristicsGate Threshold Voltage(V DS = 10 Vdc, I D = 100 µAdc)V GS(th) 1.5 2.33Vdc Gate Quiescent Voltage(V DS = 28 Vdc, I D = 125 mAdc)V GS(Q)— 3.1—Vdc Drain-Source On-Voltage(V GS = 10 Vdc, I D = 0.3 Adc)V DS(on)—0.270.35VdcDynamic CharacteristicsInput Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C iss —23—pF Output Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C oss —10—pF Reverse Transfer Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C rss—0.32—pFFunctional Tests (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 125 mA, P out = 10 W PEP , f = 960 MHz, Two-Tone Test, 100 kHz Tone Spacing Power Gain G ps 17.51820.5dB Drain EfficiencyηD 3132—%Intermodulation Distortion IMD —-37-33dBc Input Return LossIRL—-18-10dBTypical Performances (In Freescale 450 MHz Demo Board, 50 οhm system) V DD = 28 Vdc, I DQ = 150 mA, P out = 10 W PEP , 420 MHz<Frequency<470 MHz, Two-Tone Test, 100 kHz Tone Spacing Power Gain G ps —20—dB Drain EfficiencyηD —33—%Intermodulation Distortion IMD —-40—dBc Input Return LossIRL—-10—dBMW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR13RF Device DataFreescale SemiconductorFigure 1. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Schematic — 900 MHzZ50.313″ x 0.902″ Microstrip Z60.073″ x 1.080″ Microstrip Z70.073″ x 0.314″ MicrostripPCBRogers ULTRALAM 2000, 0.031″, εr = 2.55Z10.073″ x 0.223″ Microstrip Z20.112″ x 0.070″ Microstrip Z30.213″ x 0.500″ Microstrip Z40.313″ x 1.503″ Microstrip Table 6. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Designations and Values — 900 MHzPartDescriptionPart Number Manufacturer B1Ferrite Bead2743019447Fair-Rite C1, C6, C11, C2047 pF Chip Capacitors100B470JP500X ATC C2, C18, C1922 µF, 35 V Tantalum CapacitorsT491D226K035AS Kemet C3, C16220 µF, 63 V Electrolytic Capacitors, Radial 13668221Phillips C4, C150.1 µF Chip CapacitorsCDR33BX104AKWS Kemet C5, C8, C170.8-8.0 pF Variable Capacitors, Gigatrim 272915L Johanson C7, C1224 pF Chip Capacitors 100B240JP500X ATC C9, C10, C13 6.8 pF Chip Capacitors 100B6R8JP500X ATC C147.5 pF Chip Capacitor 100B7R5JP500X ATC L112.5 nH Inductor A04T-5Coilcraft R11 k Ω Chip ResistorCRCW12061001F100Vishay -Dale4RF Device DataFreescale SemiconductorMW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1Figure 2. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Layout — 900 MHzMW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR15RF Device DataFreescale SemiconductorTYPICAL CHARACTERISTICS — 900 MHzP out , OUTPUT POWER (WATTS) AVG.1520119171610100Figure 4. Two-Tone Power Gain versusOutput Power1000.1110P out , OUTPUT POWER (WATTS) AVG.Figure 5. Intermodulation Distortion Productsversus Output PowerG p s , P O W E R G A I N (d B )10−55−150.1TWO−TONE SPACING (MHz)−20−25−30−35−401100Figure 6. Intermodulation Distortion Productsversus Tone Spacing 2948P in , INPUT POWER (dBm)46444240382123252719Figure 7. Pulse CW Output Power versusInput PowerI M D , I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )P o u t , O U T P U T P O W E R (d B m )18−50−450.16RF Device DataFreescale SemiconductorMW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1TYPICAL CHARACTERISTICS — 900 MHzA C P R (dB c )0−60P out , OUTPUT POWER (WATTS) AVG.50−1040−2030−3020−4010−500.1110Figure 8. Single-Carrier CDMA ACPR, PowerGain and Power Added Efficiencyversus Output PowerP out , OUTPUT POWER (WATTS) CWFigure 10. Power Gain versus Output Power 14151912171618468G p s , P O W E R G A I N (d B )500−255f, FREQUENCY (MHz)Figure 11. Broadband Frequency Response−5−10−15−20120011001000900800700600S 11 (d B )16102ηD , D R A I N E F F I C I E N C Y (%), G p s , P O W E R G A I N (d B )MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR17RF Device DataFreescale SemiconductorTYPICAL CHARACTERISTICS21010890T J , JUNCTION TEMPERATURE (°C)Figure 12. MTTF Factor versus Junction TemperatureThis above graph displays calculated MTTF in hours x ampere 2drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by I D 2 for MTTF in a particular application.107106105120140160180190M T T F F A C T O R (H O U R S x A M P S 2)1002001701501301108RF Device DataFreescale SemiconductorMW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1f MHz Z sourceΩZ load Ω800820840 3.1 + j1.92.7 + j2.22.8 + j1.710.1 + j2.38.3 + j2.58.2 + j3.3V DD = 28 Vdc, I DQ = 125 mA, P out = 10 W PEP 860880900 3.1 + j3.42.9 + j3.73.3 + j3.89.8 + j4.810.6 + j5.69.5 + j5.5920940960 2.8 + j4.43.2 + j4.93.0 + j4.710.1 + j5.911.0 + j6.411.8 + j6.69803.6 + j5.212.1 + j7.1Figure 13. Series Equivalent Source and Load Impedance — 900 MHzZ source =Test circuit impedance as measured fromgate to ground.Z load=Test circuit impedance as measured from drain to ground.ZsourceZloadOutput Matching Networkf = 800 MHzf = 980 MHzZ o = 25 Ωf = 800 MHzf = 980 MHzZ loadZ sourceMW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR19RF Device DataFreescale SemiconductorFigure 14. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Schematic — 450 MHzZ50.475″ x 0.330″ Microstrip Z60.475″ x 0.325″ Microstrip Z8 1.250″ x 0.080″ MicrostripPCBRogers ULTRALAM 2000, 0.030″, εr = 2.55Z10.540″ x 0.080″ Microstrip Z20.365″ x 0.080″ Microstrip Z30.225″ x 0.080″ Microstrip Z4, Z70.440″ x 0.080″ Microstrip R3R4Table 7. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Designations and Values — 450 MHzPartDescriptionPart Number Manufacturer B1, B2Ferrite Bead2743019447Fair-Rite C1 1 µF, 35 V Tantalum Capacitor T491C105K050AS Kemet C2, C1522 µF, 35 V Tantalum Capacitors T491X226K035AS Kemet C3, C140.1 µF Chip Capacitors C1210C104K5RACTR Kemet C4, C9, C10, C13330 pF Chip Capacitors 700A331JP150X ATC C5 4.3 pF Chip Capacitor 100B4R3JP500X ATC C6, C110.6-8.0 pF Variable Capacitors 27291SL Johanson C7, C8, C12 4.7 pF Chip Capacitors 100B4R7JP500X ATC L139 µH Chip Inductor ISC-1210Vishay -Dale R110 Ω Chip Resistor (0805)CRCW080510R0F100Vishay -Dale R2 1 k Ω Chip Resistor (0805)CRCW08051001F100Vishay -Dale R3 1.2 k Ω Chip Resistor (0805)CRCW08051201F100Vishay -Dale R4 2.2 k Ω Chip Resistor (0805)CRCW08052201F100Vishay -Dale R5 5 k Ω Potentiometer 1224WBourns R6 1 k Ω Chip Resistor (1206)CRCW12061001F100Vishay -Dale T1 5 Volt Regulator, Micro 8LP2951On Semiconductor T2NPN TransistorBC847ALT1On Semiconductor10RF Device DataFreescale SemiconductorMW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1Figure 15. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Layout — 450 MHzMW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR111RF Device DataFreescale SemiconductorTYPICAL CHARACTERISTICS — 450 MHzI R L , I N P U T R E T U R N L O S S (d B )A C P R (dB c ), A L T 1 (d B c )500400f, FREQUENCY (MHz)Figure 16. 2-Carrier W-CDMA Broadband Performance @ P out = 3 Watts Avg.−21−6−9−12−1518.420.4−6537343128−40−45−50−55ηD , D R AI N E F F I C I E N C Y (%)G p s , P O W E R G A IN (d B )25−60−1820.22019.819.619.419.21918.818.6410420430440450460470480490f, FREQUENCY (MHz)Figure 17. 2-Carrier W-CDMA Broadband Performance @ P out = 7.5 Watts Avg.−50I R L , I N P U T R E T U R N L O S S (d B )A C P R (d B c ), A L T 1 (d B c )500400−14−4−6−8−1016.519−5555504540−30−35−40−45ηD , D R A I N E F F I C I E N C Y (%)G p s , P O W E R G A I N (d B )35−1218.818.518.31817.817.517.31716.8410420430440450460470480490f, FREQUENCY (MHz)Figure 18. Broadband Frequency Response65050530−250−5−15−20S 11S 21−1025201510100150200250300350400450500550600Figure 19. Single-Carrier N-CDMA ACPR, ALT1and ALT2 versus Output Power−80P out , OUTPUT POWER (WATTS) AVG.−10−20−30−40−700.1110−50A L T 1 & A L T 2, C H A N N E L P O W E R (d B c )A C P R , A D J A C E N T C H A N N E L P O W E R R A T I O (dB c )−6012RF Device DataFreescale SemiconductorMW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1f MHz Z sourceΩZ load Ω4004204409.0 + j3.89.6 + j6.68.8 + j5.415.0 + j1.414.3 + j3.315.0 + j4.7V DD = 28 Vdc, I DQ = 150 mA, P out= 10 W PEP 46048050010.6 + j9.511.5 + j13.910.7 + j12.616.3 + j7.316.4 + j11.116.9 + j12.7Figure 20. Series Equivalent Source and Load Impedance — 450 MHzZ source =Test circuit impedance as measured fromgate to ground.Z load=Test circuit impedance as measured from drain to ground.ZsourceZloadOutput Matching Networkf = 400 MHzZ o = 25 ΩZ loadZ sourcef = 500 MHzf = 400 MHzf = 500 MHzMW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR113RF Device DataFreescale SemiconductorNOTES14RF Device DataFreescale SemiconductorMW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1PACKAGE DIMENSIONSTO-270-2PLASTICCASE 1265-08ISSUE GMW6S010NR1(MR1)MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR115RF Device DataFreescale SemiconductorTO-270-2 GULLPLASTICCASE 1265A-02ISSUE A BOTTOM VIEWPIN 1.DRAIN 2.GATE 3.SOURCEMW6S010GNR1(GMR1)Information in this document is provided solely to enable system and softwareimplementers to use Freescale Semiconductor products. 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