Low-energy electronic structure in Y1-xCaxBa2Cu3O7-y comparison of t ime-resolved optical s

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Exploring Chemistry with Electronic Structure MethodSecond EdithionJames B. ForesmanAeleen FrischGaussian, IncPittsburgh, PA2002年9月25日特别声明本文转自南开大学BBS，在此对译者表示衷心感！！！！用Gaussian研究化学问题说明接触Gaussian已经很久了，但真正用Gaussian做东西还是临近博士毕业时的事情。

当时做计算的时候，就特别希望有一本具体怎么使用从头算的书，可惜一直没有找到。

来到这里后，在新买的Gaussian98包中发现了这本书，感觉如获至宝，也希望能够提供应想用Gaussian做东西的朋友。

我不是专门做量化的，很多术语不清楚怎么翻译，手头又没有中文的资料，错误的地方，只能希望行来指点了。

其实这本书里面介绍的东西，不止限于Gaussian 程序的。

对于从事从头算研究的都有帮助。

容中有很多计算实例，都是在Gaussian94，98程序中提供的。

节译自Exploring Chemistry with Electronic Structure Methos，SecondEdition，作者James B。

Foresman，Eleen FrischGaussian，Inc，USA，1996目录特别声明１用Gaussian研究化学问题１说明１前言1运行Gaussian2Unix/Linux平台2Windows平台2输出文件2第一章计算模型31.1 计算化学概述3分子力学理论3电子结构理论4密度泛函(Density Functional Methods)41.2 化学模型(Model Chemistries)4定义化学模型4模型的组合5第二章单点能计算52.1 能量计算设置5路径5计算的名称6分子结构6多步计算62.3 输出文件中的信息6标准几何坐标。

6能量6分子轨道和轨道能级6电荷分布7偶极矩和多极矩7CPU时间和其他72.4 核磁计算7第三章几何优化93.1 势能面93.2 寻找极小值9收敛标准10几何优化的输入10检查优化输出文件103.3 寻找过渡态103.4 难处理的优化11第四章频率分析134.1 预测红外和拉曼光谱13频率计算的输入13频率和强度13矫正因子和零点能。

aufbau principle英语解释The Aufbau Principle, also known as the building-up principle, is a fundamental concept in chemistry that explains the order in which electrons fill atomic orbitals. This principle is essential for understanding the electronic structure of atoms and predicting their chemical properties. It is based on the idea that electrons occupy the lowest energy levels available to them before filling higher energy levels.The Aufbau Principle is a key component of the periodic table, which organizes elements based on their atomic number and electronic configurations. It helps chemists predict the behavior of elements and their compounds, as well as understand trends in their properties across the periodic table.At its core, the Aufbau Principle states that electrons fill atomic orbitals in order of increasing energy. The energy levels of atomic orbitals are determined by their principal quantum number, which corresponds to the size and energy of the orbital. The four quantum numbers (n, l, ml, and ms) define the characteristics of the orbital and the spin of the electron.The order in which electrons fill atomic orbitals is based on the relative energies of the s, p, d, and f orbitals. The s orbitalsare the lowest energy orbitals, followed by the p orbitals, then the d orbitals, and finally the f orbitals. Within each type of orbital, the Aufbau Principle dictates that electrons fill the orbitals in a specific order.For example, in the ground state electron configuration of hydrogen (H), there is one electron in the 1s orbital. The next element, helium (He), has two electrons filling the 1s orbital. As we move down the periodic table to lithium (Li) and beryllium (Be), the electrons begin to fill the 2s orbital before moving on to the 2p orbitals in boron (B) and carbon (C).The Aufbau Principle also explains the exceptions to the order of filling orbitals. For example, transition metals have partially filled d orbitals, which can lead to variations in electron configurations. Additionally, some elements exhibit anomalies in their electron configurations due to the stability associated with having a half-filled or fully filled subshell.In summary, the Aufbau Principle is a foundational concept in chemistry that describes the order in which electrons fill atomic orbitals. It is crucial for understanding the electronic structure of elements and predicting their chemical properties. By following the Aufbau Principle, chemists can predict thearrangement of electrons in atoms and deduce the behavior of elements in chemical reactions.。

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关于科学的英语演讲稿关于科学的英语演讲稿the presence of students, ladies and teachers, everyone! i was prepared intervals of cloud today, in honor here entitled “technology and future” speech, i am very proud of both, but some unease. in recent years, we have seen our great motherland, the cause of the rapid development of technology, which allow me to a chinese i feel very proud. remember that long ago, cell phone use almost the only one, which is called, but a few years ago, cell phones has undergone great changes, not only look more beautiful, but also use more, you can use the phones to take pictures, meetings, internet, text messages, etc. a series of things that i their life more convenient, so i am more aware of the strength of the technology, but i am just a fledgling s students, “technology” as the word also aware of the limited, i am unable to use some very difficult theory to elaborate technology xuanji, no right to work on their elders i can promise of the technology blueprint. but i am willing to use a student’s perspective to the imagine technology and the future.from genetic engineering “is a live princes” dream, nano-technology “- not washing your clothing,” promises; fromartificial intelligence “will give you a cute robot dog” warm, transgenic technology “let people grow mouse ears” wonders. the new technology in the birth of a new technology that will let people wild with joy, because these new technologies is gradually improving our lives, let us learn more about ourselves. in the near term, china completed its first sars virus genome sequencing, sars is now the world’s largest recognized the dangers of the disease, but why not other countries completed first, and we just completed the countries? very si-mp-le, this illustrates that our country backward than others, worse than others, we look at the past, had just started a country’s reform and opening up to the current level of science and technology has lead a large country, our motherland experienced a number of ups and downs, how many difficulties and bumpy however, we still back all of the motherland, the motherland because we firmly believe that - not only technological change destiny, can change the future.for our generation, the general feeling of the community is a strong sense of competition, learning a foot down. science knowledge is the focus of our attention, albert einstein, and stephen hawking, bill gates is the star we have in mind, computer science, physics and chemistry of modern dynamic is constantly affect us. we have to understand theimportance of technology, know that the technology universal.although technology to create a new life prospects soliciting thoughts, inspiring. however, the final analysis is that we rely on our common efforts to realize. , as the future construction of the backbone of our generation of young people shoulders the burden is not light, new opportunities are always accompanied risks and challenges, but we will not give up that easily, we use our youth to predecessors vowed: never live up to their predecessors of our hope.looking back at the history of civilization, anderson is the history of mankind against the darkness of ignorance, is the scientific lit a fire in the raging human soul of hope; technology support civilization, science and technology to create the future, but the future is in our hands. let us become knowledge explorers, let us unknown roaming on the road, let me use our creativity to the world we live a better place.参考翻译：在场的学生们，女士们，老师，大家好！我准备间隔云今天，为了纪念在这里题为“科技与未来”的讲话，我感到非常自豪的两个，但有些不安。

数字电路瞬态故障低能耗自修复方法司慧玲【摘要】当前大多数字电路瞬态故障修复方法需在人工处理下才可完成,修复效率低且能耗高.为此,提出一种新的数字电路瞬态故障低能耗自修复方法.设计了一种修复系统,其主要由自律控制模块与重配置执行模块构成,自律控制模块的核心是嵌入式NiosⅡ处理器.数字电路在出现瞬态故障的情况下,通过小波神经网络算法对数字电路瞬态故障进行诊断,判断电路是否正常运行.重配置执行模块包括逻辑计算节点LC与内部互联网络,主要作用是维持数字电路功能以及与其他模块之间施行信息传递.实验结果表明,所提方法能够有效诊断故障,故障修复成功率和平均适应度高,整体性能强.%At present,most of the digital circuit transient fault repair methods need to be completed by manual processing,the repair efficiency is low and the energy consumption is high.For this,a new kind of digital circuit fault transient low energy self repair method was put forward,design a repair system,which is mainly composed of self reconfiguration control module and execution module, self-discipline of the core control module is embedded Nios processor,digital circuit in the presence of transient fault.The wavelet neural network algorithm the diagnosis of digital circuit transient fault judging circuit,whether the normal operation of.The reconfiguration execution mod-ule consists of a logical computing node LC and an internal interconnection network.The main function is to main-tain the function of the digital circuit and carry out the information transmission between the other modules.The ex-perimental results show that the proposed method can effectively diagnose the fault,the successrate and the average fitness of the fault repair are high,and the overall performance is strong.【期刊名称】《科学技术与工程》【年(卷),期】2017(017)030【总页数】6页(P257-262)【关键词】数字电路;瞬态故障;低能耗;自修复【作者】司慧玲【作者单位】郑州工业应用技术学院机电工程学院,郑州451100【正文语种】中文【中图分类】TP331.2;TM932目前数字电路已经在不同产品上被广泛使用，在使用的过程中数字电路往往会出现一些瞬态故障，导致产品不能正常工作[1,2]。

ARTICLEReceived1Apr2014|Accepted9Jan2015|Published24Feb2015Observation of long-lived interlayer excitonsin monolayer MoSe2–WSe2heterostructuresPasqual Rivera1,John R.Schaibley1,Aaron M.Jones1,Jason S.Ross2,Sanfeng Wu1,Grant Aivazian1,Philip Klement1,Kyle Seyler1,Genevieve Clark2,Nirmal J.Ghimire3,4,Jiaqiang Yan4,5,D.G.Mandrus3,4,5, Wang Yao6&Xiaodong Xu1,2Van der Waals bound heterostructures constructed with two-dimensional materials,such asgraphene,boron nitride and transition metal dichalcogenides,have sparked wide interest indevice physics and technologies at the two-dimensional limit.One highly coveted hetero-structure is that of differing monolayer transition metal dichalcogenides with type-II bandalignment,with bound electrons and holes localized in individual monolayers,that is,interlayer excitons.Here,we report the observation of interlayer excitons in monolayerMoSe2–WSe2heterostructures by photoluminescence and photoluminescence excitationspectroscopy.Wefind that their energy and luminescence intensity are highly tunable by anapplied vertical gate voltage.Moreover,we measure an interlayer exciton lifetime of B1.8ns,an order of magnitude longer than intralayer excitons in monolayers.Our work demonstratesoptical pumping of interlayer electric polarization,which may provoke further explorationof interlayer exciton condensation,as well as new applications in two-dimensional lasers,light-emitting diodes and photovoltaic devices.1Department of Physics,University of Washington,Seattle,Washington98195,USA.2Department of Materials Science and Engineering,University of Washington,Seattle,Washington98195,USA.3Department of Physics and Astronomy,University of T ennessee,Knoxville,T ennessee37996,USA.4Materials Science and T echnology Division,Oak Ridge National Laboratory,Oak Ridge,T ennessee37831,USA.5Department of Materials Science and Engineering,University of T ennessee,Knoxville,T ennessee37996,USA.6Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong,Hong Kong,China.Correspondence and requests for materials should be addressed to P.R.(email:pasqual@)or to X.X. (email:xuxd@).T he recently developed ability to vertically assemble different two-dimensional(2D)materials heralds a newrealm of device physics based on van der Waals heterostructures(HSs)1.The most successful example to date is the vertical integration of graphene on boron nitride.Such novel HSs not only markedly enhance graphene’s electronic properties2, but also give rise to superlattice structures demonstrating exotic physical phenomena3–5.A fascinating counterpart to gapless graphene is a class of monolayer direct bandgap semiconductors, namely transition metal dichalcogenides(TMDs)6–8.Due to the large binding energy in these2D semiconductors,excitons dominate the optical response,exhibiting strong light–matter interactions that are electrically tunable9,10.The discovery of excitonic valley physics11–15and strongly coupled spin and pseudospin physics16,17in2D TMDs opens up new possibilities for device concepts not possible in other material systems. Monolayer TMDs have the chemical formula MX2where the M is tungsten(W)or molybdenum(Mo),and the X is sulfur(S) or selenium(Se).Although these TMDs share the same crystalline structure,their physical properties,such as bandgap,exciton resonance and spin–orbit coupling strength,can vary signifi-cantly.Therefore,an intriguing possibility is to stack different TMD monolayers on top of one another to form2D HSs.First-principle calculations show that heterojunctions formed between monolayer tungsten and molybdenum dichalcogenides have type-II band alignment18–20.Recently,this has been confirmed by X-ray photoelectron spectroscopy and scanning tunnelling spectroscopy21.Since the Coulomb binding energy in2D TMDs is much stronger than in conventional semiconductors, it is possible to realize interlayer excitonic states in van der Waals bound heterobilayers,that is,bound electrons and holes that are localized in different layers.Such interlayer excitons have been intensely pursued in bilayer graphene for possible exciton condensation22,but direct optical observation demonstrating the existence of such excitons is challenging owing to the lack of a sizable bandgap in graphene.Monolayer TMDs with bandgaps in the visible range provide the opportunity to optically pump interlayer excitons,which can be directly observed through photoluminescence(PL)measurements.In this report,we present direct observation of interlayer excitons in vertically stacked monolayer MoSe2–WSe2HSs.We show that interlayer exciton PL is enhanced under optical excitation resonant with the intralayer excitons in isolated monolayers,consistent with the interlayer charge transfer resulting from the underlying type-II band structure.We demonstrate the tuning of the interlayer exciton energy by applying a vertical gate voltage,which is consistent with the permanent out-of-plane electric dipole nature of interlayer excitons.Moreover,wefind a blue shift in PL energy at increasing excitation power,a hallmark of repulsive dipole–dipole interac-tions between spatially indirect excitons.Finally,time-resolved PL measurements yield a lifetime of1.8ns,which is at least an order of magnitude longer than that of intralayer excitons.Our work shows that monolayer semiconducting HSs are a promising platform for exploring new optoelectronic phenomena.ResultsMoSe2–WSe2HS photoluminescence.HSs are prepared by standard polymethyl methacrylate(PMMA)transfer techniques using mechanically exfoliated monolayers of WSe2and MoSe2(see Methods).Since there is no effort made to match the crystal lattices of the two monolayers,the obtained HSs are considered incom-mensurate.An idealized depiction of the vertical MoSe2–WSe2HS is shown in Fig.1a.We have fabricated six devices that all show similar results as those reported below.The data presented here are from two independent MoSe2–WSe2HSs,labelled device1and device2.Figure1b shows an optical micrograph of device1,which has individual monolayers,as well as a large area of vertically stacked HS.This device architecture allows for the comparison of the excitonic spectrum of individual monolayers with that of the HS region,allowing for a controlled identification of spectral changes resulting from interlayer coupling.We characterize the MoSe2–WSe2monolayers and HS using PL measurements.Inspection of the PL from the HS at room temperature reveals three dominant spectral features(Fig.1c). The emission at1.65and1.57eV corresponds to the excitonic states from monolayer WSe2and MoSe2(refs10,15),respectively. PL from the HS region,outlined by the dashed white line in Fig.1a,reveals a distinct spectral feature at1.35eV(X I).Two-dimensional mapping of the spectrally integrated PL from X I shows that it is isolated entirely to the HS region(inset,Fig.1c), with highly uniform peak intensity and spectral position (Supplementary Materials1).Low-temperature characterization of the HS is performed with 1.88eV laser excitation at20K.PL from individual monolayer WSe2(top),MoSe2(bottom)and the HS area(middle)are shown with the same scale in Fig.1d.At low temperature,the intralayer neutral(X M o)and charged(X MÀ)excitons are resolved10,15,where M labels either W or parison of the three spectra shows that both intralayer X M o and X MÀexist in the HS with emission at the same energy as from isolated monolayers,demonstrating the preservation of intralayer excitons in the HS region.PL from X I becomes more pronounced and is comparable to the intralayer excitons at low temperature.We note that the X I energy position has variation across the pool of HS samples we have studied (Supplementary Fig.1),which we attribute to differences in the interlayer separation,possibly due to imperfect transfer and a different twisting angle between monolayers.We further perform PL excitation(PLE)spectroscopy to investigate the correlation between X I and intralayer excitons.A narrow bandwidth(o50kHz)frequency tunable laser is swept across the energy resonances of intralayer excitons(from1.6to 1.75eV)while monitoring X I PL response.Figure2a shows an intensity plot of X I emission as a function of photoexcitation energy from device2.We clearly observe the enhancement of X I emission when the excitation energy is resonant with intralayer exciton states(Fig.2b).Now we discuss the origin of X I.Since X I has never been observed in our exfoliated monolayer and bilayer samples,if its origin were related to defects,they must be introduced by the fabrication process.This would result in sample-dependent X I properties with non-uniform spatial dependence.However,our data show that key physical properties of X I,such as the resonance energy and intensity,are spatially uniform and isolated to the HS region(inset of Fig.1c and Supplementary Fig.2).In addition,X I has not been observed in WSe2–WSe2homo-structures constructed from exfoliated or physical vapor deposi-tion(PVD)grown monolayers(Supplementary Fig.3).All these facts suggest that X I is not a defect-related exciton.Instead,the experimental results support the observation of an interlayer exciton.Due to the type-II band alignment of the MoSe2–WSe2HS18–20,as shown in Fig.2c,photoexcited electrons and holes will relax(dashed lines)to the conduction band edge of MoSe2and the valence band edge of WSe2,respectively.The Coulomb attraction between electrons in the MoSe2and holes in the WSe2gives rise to an interlayer exciton,X I,analogous to spatially indirect excitons in coupled quantum wells.The interlayer coupling yields the lowest energy bright exciton in the HS,which is consistent with the temperature dependence of X I PL,that is,it increases as temperature decreases (Supplementary Fig.4).From the intralayer and interlayer exciton spectral positions,we can infer the band offsets between the WSe 2and MoSe 2monolayers (Fig.2c).The energy difference between X W and X I at room temperature is 310meV.Considering the smaller binding energy of interlayer than intralayer excitons,this sets a lower bound on the conduction band offset.The energy difference between X M and X I then provides a lower bound on the valence band offset of 230meV.This value is consistent with the valence band offset of 228meV found in MoS 2–WSe 2HSs by micro X-ray photoelectron spectroscopy and scanning tunnelling spectro-scopy measurements 21.This experimental evidence strongly corroborates X I as an interlayer exciton.The observation of bright interlayer excitons in monolayer semiconducting HSs is of central importance,and the remainder of this paper will focus on their physical properties resulting from their spatially indirect nature and the underlying type-II band alignment.WSe 2HSMoSe 2W M SeIn te n s i t y (a .u .)1.31.51.7Energy (eV)MoSe 2HeterostructureWSe 2W0WX X X X −0MoMo−e hehe h1.3 1.41.51.6 1.7I n t e n s i t y (a .u .)Energy (eV)5μm 0123×104Y (μm )246X (μm)0246Figure 1|Intralayer and interlayer excitons of a monolayer MoSe 2–WSe 2vertical heterostructure.(a )Cartoon depiction of a MoSe 2–WSe 2heterostructure (HS).(b )Microscope image of a MoSe 2–WSe 2HS (device 1)with a white dashed line outlining the HS region.(c )Room-temperature photoluminescence of the heterostructure under 20m W laser excitation at 2.33eV.Inset:spatial map of integrated PL intensity from the low-energy peak (1.273–1.400eV),which is only appreciable in the heterostructure area,outlined by the dashed black line.(d )Photoluminescence of individual monolayers and the HS at 20K under 20m W excitation at 1.88eV (plotted on the samescale).Energy (eV)WSe MoSe PL energy (eV)E x c i t a t i o n e n e r g y (e V )1.28 1.3 1.32 1.34 1.36 1.381.61.651.71.754,0006,0008,00010,000IntensityFigure 2|Photoluminescence excitation spectroscopy of the interlayer exciton at 20K.(a )PLE intensity plot of the heterostructure region with an excitation power of 30m W and 5s charge-coupled device CCD integration time.(b )Spectrally integrated PLE response (red dots)overlaid on PL (black line)with 100m W excitation at 1.88eV.(c )Type-II semiconductor band alignment diagram for the 2D MoSe 2–WSe 2heterojunction.interlayer exciton .Applying vertical energy of Figure 3a contact stacked insu-Electrostatic contact shows the 100to about analogue of reversed,varied expected for from reduces device 2,conduction 3b,c.of the in the on top band-offset at X I PL energy of basis of would should have X I PL This effect,intensity.further Power dependence and lifetime of interlayer exciton PL .The interlayer exciton PLE spectrum as a function of laser power with excitation energy in resonance with X W o reveals several properties of the X I .Inspection of the normalized PLE intensity (Fig.4a)shows the evolution of a doublet in the interlayer excitonspectrum,highlighted by the red and Both peaks of the doublet display a consistent increased laser intensity,shown by the dashed which are included as a guide to the eye.intensity of X I also exhibits a strong saturation laser power,as shown in Fig.4b (absolute Supplementary Fig.6).The sublinear power excitation powers above 0.5m W is distinctly the intralayer excitons in isolated monolayers,saturation power threshold of about Fig.7).The low power saturation of X I PL lifetime than that of intralayer excitons.the intralayer exciton is substantially reduced interlayer charge hopping 23,which is quenching of intralayer exciton PL (Fig.Fig.8).Moreover,the lifetime of the interlayer because it is the lowest energy configuration indirect nature leads to a reduced optical long lifetime is confirmed by time-resolved Fig.4c.A fit to a single exponential decay exciton lifetime of 1.8±0.3ns.This timescale the intralayer exciton lifetime,which is ps 24–27.By modelling the saturation behaviour three-level diagram,the calculated saturation interlayer exciton is about 180times (Supplementary Fig.7;Supplementary with our observation of low saturation intensity DiscussionWe attribute the observed doublet feature splitting of the monolayer MoSe 2conduction assignment is mainly based on the fact difference between the doublet is B 25with MoSe 2conduction band splitting predicted calculations 28.This explanation is also supported by the evolution of the relative strength of the two peaks with increasing excitation power,as shown in Fig.4a (similar results in device 1with 1.88eV excitation shown in Supplementary Fig.9).At low power,the lowest energy configuration of interlayer excitons,with the electron in the lower spin-split band of MoSe 2,is populated first.Due to phase space filling effects,the interlayer excitonSiO 2n + Si2MoSe 2e –h +e –h +P Ee –h +V g < 0WSe 2MoSe 2WSe 2MoSe 2h ωV g = 0Photon energy (eV)1.321.361.41.444080e –h +h +PL intensity (a.u.) -hω’-the interlayer exciton and band alignment.(a )Device 2geometry.The interlayer exciton has a out-of-plane electric polarization.(b )Electrostatic control of the band alignment and the interlayer exciton photoluminescence as a function of applied gate voltage under 70m W excitation at 1.744eV,1s integrationconfiguration with the electron in the higher energy spin-split band starts to be filled at higher laser power.Consequently,the higher energy peak of the doublet becomes more prominent at higher excitation powers.The observed blue shift of X I as the excitation power increases,indicated by the dashed arrows in Fig.4a,is a signature of the repulsive interaction between the dipole-aligned interlayer excitons (cf.Fig.3a).This is a hallmark of spatially indirect excitons in gallium arsenide (GaAs)coupled quantum wells,which have been intensely studied for exciton Bose-Einstein condensation (BEC)phenomena 29.The observation of spatially indirect interlayer excitons in a type-II semiconducting 2D HS provides an intriguing platform to explore exciton BEC,where the observed extended lifetimes and repulsive interactions are two key ingredients towards the realization of this exotic state of matter.Moreover,the extraordinarily high binding energy for excitons in this truly 2D system may provide for degenerate exciton gases at elevated temperatures compared with other material systems 30.The long-lived interlayer exciton may also lead to new optoelectronic applications,such as photovoltaics 31–34and 2D HS nanolasers.MethodsDevice fabrication .Monolayers of MoSe 2are mechanically exfoliated onto 300nm SiO 2on heavily doped Si wafers and monolayers of WSe 2onto a layer of PMMA atop polyvinyl alcohol on Si.Both monolayers are identified with an opticalmicroscope and confirmed by their PL spectra.Polyvinyl alcohol is dissolved in H 2O and the PMMA layer is then placed on a transfer loop or thin layer of poly-dimethylsiloxane (PDMS).The top monolayer is then placed in contact with the bottom monolayer with the aid of an optical microscope and micromanipulators.The substrate is then heated to cause the PMMA layer to release from the transfer media.The PMMA is subsequently dissolved in acetone for B 30min and then rinsed with isopropyl alcohol.Low-temperature PL measurements .Low-temperature measurements are con-ducted in a temperature-controlled Janis cold finger cryostat (sample in vacuum)with a diffraction-limited excitation beam diameter of B 1m m.PL is spectrally filtered through a 0.5-m monochromator (Andor–Shamrock)and detected on a charge-coupled device (Andor—Newton).Spatial PL mapping is performed using a Mad City Labs Nano-T555nanopositioning system.For PLE measurements,a continuous wave Ti:sapphire laser (MSquared—SolsTiS)is used for excitation and filtered 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chalcogenides.Proc.Natl A111,6198–6202 (2014).AcknowledgementsThis work is mainly supported by the US DoE,BES,Materials Sciences and Engineering Division(DE-SC0008145).N.J.G.,J.Y.and D.G.M.are supported by US DoE,BES, Materials Sciences and Engineering Division.W.Y.is supported by the Research Grant Council of Hong Kong(HKU17305914P,HKU9/CRF/13G),and the Croucher Foun-dation under the Croucher Innovation Award.X.X.thanks the support of the Cottrell Scholar Award.P.R.thanks the UW GO-MAP program for their support.A.M.J.is partially supported by the NSF(DGE-0718124).J.S.R.is partially supported by the NSF (DGE-1256082).S.W.and G.C.are partially supported by the State of Washington through the UW Clean Energy Institute.Device fabrication was performed at the Washington Nanofabrication Facility and NSF-funded Nanotech User Facility. Author contributionsX.X.and P.R.conceived the experiments.P.R.and P.K.fabricated the devices,assisted by J.S.R.P.R.performed the measurements,assisted by J.R.S.,A.M.J.,J.S.R.,S.W.and G.A. P.R.and X.X.performed data analysis,with input from W.Y.N.J.G.,J.Y.and D.G.M. synthesized and characterized the bulk WSe2crystals.X.X.,P.R.,J.R.S.and W.Y.wrote the paper.All authors discussed the results.Additional informationSupplementary Information accompanies this paper at / naturecommunicationsCompetingfinancial interests:The authors declare no competingfinancial interests. Reprints and permission information is available online at / reprintsandpermissions/How to cite this article:Rivera,P.et al.Observation of long-lived interlayer excitons in monolayer MoSe2–mun.6:6242doi:10.1038/ncomms7242(2015).。