TLP598AA中文资料
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TOSHIBA Weight: 0.4 g
11−7A8
Pin Configuration (top view)
1
6 1. : ANODE
2. : CATHODE
2
5 3. : NC
4. : DRAIN D1
5. : SOURCE
3
4 6. : DRAIN D2
Schematic
1
6
2
5
4
1
2007-10-01
Trigger LED current
On−state resistance
A connection B connection C connection
Symbol IFT
RON
Test Condition
ION = 500 mA ION = 500 mA, IF = 5 mA ION = 500 mA, IF = 5 mA ION = 1000 mA, IF = 5 mA
(Note 2)
Tj Tstg Topr Tsol BVS
125 −55~125 −40~85
260 2500
°C °C °C °C Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
The TOSHIBA TLP598AA consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a six lead plastic DIP package (DIP6). The TLP598AA is a bi-directional switch which can replace mechanical relays in many applications. And its high on-state current maximum rating is suitable to control a power line.
—
— 400 mA
−20
—
80
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.
Symbol CS RS
BVS
Test Condition
VS = 0, f = 1 MHz VS = 500 V, R.H. ≤ 60% AC, 1 minute AC, 1 second (in oil) DC, 1 minute (in oil)
Min.
Typ.
— 5 × 1010
2500 — —
元器件交易网
TOSHIBA Photocoupler Photo Relay
TLP598AA
Telecommunication Data Acquisition Measurement Instrumentation Power line control
TLP598AA
Unit in mm
Characteristic
Symbol
Min. Typ. Max. Unit
Supply voltage Forward current On−state current (A connection) Operating temperature
VDD IF ION
Topr
—
—
48
V
5
7.5
20
mA
LED
Characteristic Forward voltage Reverse current Capacitance Off−state current
Capacitance
Symbol
VF IR CT IOFF
Test Condition
IF = 10 mA VR = 5 V V = 0, f = 1 MHz
Circuit Connections
1
6
2
5
3
4
LOAD AC
or DC
1
6
2
5
3
4
LOAD DC
1
6
2
5
3
4
LOAD DC
A connection
Bonnection
2007-10-01
元器件交易网
Individual Electrical Characteristics (Ta = 25°C)
0.8 1014 — 5000 5000
Max.
— — — — —
Unit pF Ω Vrms VDC
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Turn−on time Turn−off time
tON tOFF
(Note 3): Switching time test circuit
A connection
IF ΔIF / °C
IFP VR Tj VOFF
30
mA
−0.3
mA / °C
1
A
5
V
125
°C
60
V
500
Detector
On−state RMS current
B connection
ION
C connection
500
mA
1000
On−state current derating (Ta ≥ 25°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Forward voltage VF (V)
On-state current ION(RMS) (mA)
ION(RMS) – Ta
1200
C connection 1000
800
600 A, B connections
400
200
0
−20
0
20
40
60
80 100 120
VOFF = 60 V
COFF
V = 0, f = 1 MHz
Detector
TLP598AA
Min.
Typ.
Max. Unit
1.18
1.33
1.48
V
—
—
10
μA
—
30
—
pF
—
—
1
μA
—
130
—
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Allowable forward current IF (mA)
IF – Ta
100
80 60 40
20
0
−20
0
20
40
60
80
100
Ambient temperature Ta (°C)
Allowable MOS FET power dissipation PC (mW)
TLP598AA
600 A, C connection
A connection B connection C connection
ΔION / °C
−5.0 −5.0 −10.0
mA / °C
Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 min., R.H. ≤ 60%)
(Note 2): Device considered a two−terminal device: Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together.
