TLP3502A中文资料
- 格式:pdf
- 大小:154.58 KB
- 文档页数:7
TOSHIBA Photocoupler GaAs Ired & Photo −TriacTLP3502ATrica DriverProgrammable Controllers AC −Output Module Solid State RelayThe TOSHIBA TLP3502A consists of a photo −triac optically coupled to a gallium arsenide infrared emitting diode in a 8 lead plastic DIP package.· Peak off −state voltage: 400V(min.) · Trigger LED current: 10mA(max.) · On −state current: 0.6A rms (max.) · Isolation voltage: 2500 V rms (min.) · UL recognized: UL 1577, file no. E67349 · Trigger LED currentTrigger LED Current (mA)V T = 6V, Ta = 25°CClassi - fication* Min. Max.Marking OfClassification(IFT5) ― 5.0T5 (IFT7) ― 7.0 T5,T7 Standard― 10 T5, T7, blank*Ex. (IFT5); TLP3502A(IFT5)(Note) Application type name for certification test, please use standard product type name, i.e. TLP3502A (IFT5): TLP3502APin Configuration (top view)22 : Anode3 : Cathode 5 : Triac gate 6 : Triac T1 8 : Triac T2863Unit in mmTOSHIBA 11−10C3 Weight: 0.52gMaximum Ratings (Ta = 25°C)Characteristic Symbol Rating UnitForward currentI F 50 mA Forward current derating (Ta ≥ 53°C) ∆I F / °C-0.7mA / °CPeak forward current (100µs pulse, 100pps) I FP 1 A Reverse voltage V R 5 V L E DJunction temperatureT j 125 °C Off -state output terminal voltage V DRM 400 V Ta = 40°C 0.6 On -state RMS current Ta = 60°CI T(RMS) 0.45 A On -state current derating (Ta ≥ 40°C) ∆I T / °C-7.5mA / °CPeak current from snubber circuit(100µs pulse, 120pps)I SP 2 A Peak nonrepetitive surge current (50Hz, peak)I TSM 5 A D e t e c t o rJunction temperatureT j 120 °C Storage temperature range T stg -40~125 °C Operating temperature range T opr-20~80 °CLead soldering temperature (10s) T sol 260 °C Isolation voltage (AC, 1min., R.H.≤ 60%)(Note)BV S 2500 V rms(Note) Device considered a two terminal: LED side pins shorted togetherand Detector side pins shorted together.Recommended Operating ConditionsCharacteristic Symbol Min. Typ. Max.UnitSupply voltage V AC―― 120 V acForward currentI F 15 20 25 mA Peak current from snubbercircuitI SP ― ―1 AOperating temperatureT opr-20― 80 °CIndividual Electrical Characteristics (Ta = 25°C)Characteristic Symbol Test Condition Min. Typ. Max.Unit Forward voltage V F I F = 10mA 1.0 1.151.3VReverse currentI RV R = 5V ―― 10 µAL E DCapacitance C T V = 0, f = 1MHz― 30 ― pF Peak off -state current I DRM V DRM = 400V, Ta = 110°C ― ― 100µAPeak on -state voltage V TM I TM = 0.75A― ― 3.0 V Holding current I H ――― 25 mACritical rate of rise of off -state voltage dv / dt V in = 120V rms (Fig.1)200 500 ― V /µs D e t e c t o rCritical rate of rise of commutating voltagedv / dt (C)V in = 120V rms , I T = 0.5A rms(Fig.1)― 5 ― V / µsCoupled Electrical Characteristics (Ta = 25°C)Characteristic Symbol Test Condition Min. Typ. Max.UnitTrigger LED current I FT V T = 6V ―― 10 mACapacitance(input to output) C S V S = 0, f = 1MHz ― 1.5 ― pF Isolation resistanceR SV S = 500V 5×1010 1014 ― Ω AC, 1 minute2500――AC, 1 second, in oil ― 5000 ― V rms Isolation voltageBV SDC, 1 minute, in oil― 5000 ―V dcFig.1: dv / dt test circuit0V V CCI T(RMS) – TaAmbient temperature Ta (°C)O n -s t a t e c u r r e n t I T (R M S ) (A )0.8-201.00.60.40.20 2040 60 80 100 120I F – V FForward voltage V F (V)F o r w a r d c u r r e n t I F (m A )0.61.0 1.2 1.6 0.8 1.4 1.8F o r w a r d v o l t a g e t e m p e r a t u r e C o e f f i c i e n t ΔV F /ΔT a (m V /°C )ΔV F /ΔTa – I F-0.40.1-2.8-2.4-2.0-1.6-1.2-0.80.3 1 3 10 30 500.5 5 Forward current I F (mA)I FP – D RDuty cycle ratio D RA l l o w a b l e p u l s e f o r w a r d c u r r e n t I F P (m A )310 3 3 3 10 10 10I FP – V FPPulse forward voltage V FP (V)P u l s e f o r w a r d c u r r e n t I F P (m A )0.61.0 1.4 1.82.2 2.63.0I F – TaAmbient temperature Ta (°C) A l l o w a b l e f o r w a r d c u r r e n tI F (m A )0 800-2010060402020 40 60 80 100 120Normalized I FT – TaAmbient temperature Ta (°C) T r i g g e r l e d c u r r e n t I F T (a r b i t r a r y u n i t )10080Normalized I H – TaH o l d i n g c u r r e n t I H (a r b i t r a r y u n i t )30.1-4021.210.5-20 0 20 40 60 0.310080 Ambient temperature Ta (°C)Normalized I DRM – TaAmbient temperature Ta (°C) P e a k o f f -s t a t e c u r r e n t I D R M (a r b i t r a r y u n i t )100 10101020 40 60 80 100Normalized V DRM – TaO f f -s t a t e o u t p u t t e r m i n a l v o l t a g e V D R M (a r b i t r a r y u n i t )Ambient temperature Ta (°C)1.40.2-401.21.00.8-20 0 20 40 60 0.610080 0.4Normalized LED Current– Led Current Pulse WidthLed current pulse width P W (µs)N o r m a l i z e d l e d c u r r e n t I F / I F T100.31021.610.530 50 100 300 1.21000500 35· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The products described in this document are subject to the foreign exchange and foreign trade laws.· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice.000707EBCRESTRICTIONS ON PRODUCT USEThis datasheet has been download from: Datasheets for electronics components.。