前言感谢您选用正弦电气EM730系列变频器。
资料编号：31010206发布时间：2021-07版本：200EM730系列变频器是正弦电气推出的高可靠性、小体积通用变频器：EM730支持三相交流异步机、永磁同步电机（EM730永磁同步非标）；支持多种驱动控制技术——矢量VF控制技术（VVF）和无速度传感器矢量控制技术（SVC）；支持速度和转矩两种输出形式，支持Wi-Fi接入功能及后台软件调试功能。
EM730系列变频器有如下特点：●支持手机APP调试或监视变频器状态；●支持Wi-Fi模块或串口接入；●丰富、便捷的PC端后台软件功能；●50℃环境温度，无需降容；●支持“一键飞梭”，快速、精准调速；●保护功能完善：短路、过流、过压、过载、过热等多重保护。
在使用EM730系列变频器之前，请您仔细阅读本手册，并请妥善保存。
变频器首次与电机连接时，请您正确选择电机类型（异步机或同步机），并设定电机铭牌参数：额定功率、额定电压、额定电流、额定频率、额定转速、电机接法及额定功率因数等。
由于我们始终致力于产品和产品资料的完善，因此，本公司提供的资料如有变动，恕不另行通知。
最新变动和更多内容，请访问安全注意事项安全定义：在本手册中，安全注意事项分以下两类；：由于没有按要求操作造成的危险，可能导致重伤，甚至死亡的情况。
：由于没有按要求操作造成的危险，可能导致中度伤害或轻伤，及设备损坏的情况。
请用户在安装、调试和维修本系统时，仔细阅读本章，务必按照本章内容所要求的安全注意事项进行操作，如出现因违规操作而造成的任何伤害和损失均与本公司无关。
安全事项安装前：安装时：接线时：上电前:上电后：运行中：保养时：注意事项电机绝缘检查电机在首次使用、长时间放置后的再使用之前及定期检查时，应做电机绝缘检查，防止因电机绕组的绝缘失效而损坏变频器。
绝缘检查时一定要将电机连线从变频器分开，建议采用500V电压型兆欧表，应保证测得绝缘电阻不小于5MΩ。
FichetechniqueAXIS F1005-E Sensor UnitConception solide adaptéeàune surveillance en intérieur,en extérieur et mobileL'AXIS F1005-E est un capteur polyvalent adaptéàune surveillance discrète en intérieur,en extérieur et mobile.Il peutêtre installédans des espaces réduits,ou encastrédans un mur ou un plafond.Conçu pourêtre utiliséavec une unitéprincipale AXIS F,le capteur AXIS F1005-E offre une résolution de1080p et un champ de vision horizontal de113°. Il prendégalement en charge le mode Wide Dynamic Range(WDR)–Forensic Capture,parfait pour les scènes dans les zones trèséclairées ou sombres.Ce capteur robuste résisteàla poussière,àla pluie,àla neige,aux vibrations aux chocs et aux impacts.Le capteur AXIS F1005-E est livréavec un câble amovible de3ou12m(10/39pi)pour raccordementàune unitéprincipale.Un support de montageàangle variable est inclus.>Conception solide et modulable,adaptéeàune utilisation en intérieur,en extérieur et mobile>Objectif fixe avec une résolution de1080p>Champ de vision horizontal large de113º>Mode WDR-Forensic Capture(avec unitéprincipale AXIS F41/F44)AXIS F1005-E Sensor Unit Modèles AXIS F1005-E(câble de3m/10pi):standard,certifiéIP66/IP67AXIS F1005-E(câble de12m/39pi):standard,certifiéIP66/IP67CaméraCapteur Capteur CMOS RVBàbalayage progressif1/2,8”(efficace)Objectif Diaphragme fixe2,8mm,F2.0Avec AXIS F34/F41/F44en1080p:Angle de vue horizontal:113°Angle de vue vertical:62°Avec AXIS F34/F44en720p:Angle de vue horizontal:73°Angle de vue vertical:41°Résolutions Max.1920x1200/1080Plage dynamique étendue WDR–Forensic CaptureAvec AXIS F41:1080p,25/30ips(50/60Hz) Avec AXIS F44:720p,12,5/15ips(50/60Hz)ÉclairageminimumCouleur:0,3luxDuréed'obturation Avec AXIS F34/F44:HDTV720p25/30ips:de1/28000sà2s1080p12,5/15ips:de1/22500sà2sAvec AXIS F41:HDTV1080p25/30/50/60ips:de1/143000sà2s WUXGA(1920x1200)25/30ips:de1/143000sà2sFréquenced'imageMax.50/60ips(50/60Hz)GénéralBoîtier Boîtier en aluminium certifiéIP66,IP67Conditions d'utilisation De-30°Cà55°C(-22°Fà131°F)Humiditérelative de10%à100%(avec condensation)Conditions destockageDe-40°Cà65°C(40°Fà149°F)Homologations ECE R10révision04,EN50121-4,IEC/EN/UL60950-1,IEC60068-2-1,IEC60068-2-2,IEC60068-2-14,IEC60068-2-30,IEC60068-2-78,IEC60529IP4X,IEC62236-4,EN55022Classe B,EN55024,EN61000-3-2,EN61000-3-3,EN61000-6-1,EN61000-6-2,FCC partie15-sous-partie B,Classe B,ICES-003Classe B,VCCI Classe B,C-tick AS/NZS CISPR22Classe B,KCC KN22Classe B,KN24,EN50581IEC60068-2-60,IEC60529IP66/IP67,IEC60721-3-55M3(vibration,choc),IEC/EN/UL60950-22,NEMA250Type4XDimensions De62mm(27/16po)ø30mm(13/16po)Poids câble de3m/10pi:116g(0,26lb)câble de12m/39pi:366g(0,81lb)ConfigurationmatériellerequiseUnitéprincipale AXIS F34/F41/F44AccessoiresfournisGuide d’installationAXIS F8201Vari-angle Mounting BracketAccessoires enoptionAXIS F8203Fixed Mount BracketAXIS F8204Mounting BandAXIS F8205Bullet AccessoryAXIS F8212Trim RingAXIS F8401Clear Lens ProtectorGarantie Garantie de5ans,voir /warrantyResponsabilitéenvironnementale:/environmental-responsibility©2015-2020Axis Communications AB.AXIS COMMUNICATIONS,AXIS et VAPIX sont des marques déposées d’Axis AB ou encours de dépôt par Axis AB dans différentes juridictions.Tous les autres noms,produits ou services sont la propriétéde leursdétenteurs respectifs.Document sujetàmodification sans préavis.T10061902/FR/M4.2/2010。
UPC4574G2-E1中⽂资料The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.DATA SHEETDocument No. G15977EJ4V0DS00 (4th edition)Date Published March 2004 N CP(K) Printed in JapanThe mark shows major revised points.1987DESCRIPTIONThe µPC4574 is an ultra low noise, high slew rate quad operational amplifier specifically designed for audio, instrumentation, and communication circuits. The low noise and high frequency capabilities make it ideal for preamps and active filters for instrumentation and professional audio.FEATURESUltra low noise High slew rate Wide bandwidthInternal frequency compensationORDERING INFORMATIONPart NumberPackageµPC4574C µPC4574C(5) 14-pin plastic DIP (7.62 mm (300)) 14-pin plastic DIP (7.62 mm (300)) µPC4574G2 µPC4574G2(5) 14-pin plastic SOP (5.72 mm (225)) 14-pin plastic SOP (5.72 mm (225))EQUIVALENT CIRCUIT (1/4 Circuit)I I I NVVPIN CONFIGURATION (Top View)OUT 4I I4I N4V ?I N3I I3OUT 3OUT 1I I1I N1V +I N2I I2OUT 2PC4574C, 4574C(5), 4574G2, 4574G2(5)µData Sheet G15977EJ4V0DS2ABSOLUTE MAXIMUM RATINGS (T A = 25°C)Parameter SymbolRatings Unit Voltage between V +and V ? Note1V +V0.3 to +36VDifferential Input Voltage V ID ±30 V Input VoltageNote2V IV ??0.3 to V ++0.3 V Output VoltageNote3V OV ??0.3 to V + +0.3VC Package Note4570 mW Power Dissipation G2 PackageNote5P T 550 mW Output Short Circuit DurationNote610 sec Operating Ambient Temperature T A ?20 to +80 °C Storage TemperatureT stg55 to +125°CNotes 1. Reverse connection of supply voltage can cause destruction.2. The input voltage should be allowed to input without damage or destruction. Even during the transition periodof supply voltage, power on/off etc., this specification should be kept. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics.3. This specification is the voltage which should be allowed to supply to the output terminal from externalwithout damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics.4. Thermal derating factor is –7.6 mW/°C when ambient temperature is higher than 50°C.5. Thermal derating factor is –5.5 mW/°C when ambient temperature is higher than 25°C.6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 andNote 5.RECOMMENDED OPERATING CONDITIONSParameter Symbol MIN. TYP. MAX. UnitSupply Voltage V ± ±4 ±16 V Output Current I O±10 mASource Resistance R S 50k ?Capacitive Load (A V = +1)C L 100 pFµPC4574C, µPC4574G2±Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage.8.This current flows irrespective of the existence of use.Data Sheet G15977EJ4V0DS 3µPC4574C(5), µPC4574G2(5)±Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage.8.This current flows irrespective of the existence of use.4Data Sheet G15977EJ4V0DSMEASUREMENT CIRCUITFig.1 Total Harmonic Distortion Measurement CircuitnFig.3 Flat Noise Measurement Circuit (FLAT+JIS A)V O = 40 dB x V n100 V n =V O40 dBData Sheet G15977EJ4V0DS 5Data Sheet G15977EJ4V0DS6TYPICAL PERFORMANCE CHARACTERISTICS (T A = 25°C, TYP.) T A - Operating Ambient Temperature - ?CPOWER DISSIPATIONP T - T o t a l P o w e r D i s s i p a t i o n - m W800600400200020*********20406080100120110010 k 1 M 1 k 10100 k 10 Mf - Frequency - HzOPEN LOOP FREQUENCY RESPONSEA V - O p e n L o o p V o l t a g e G a i n - d BV ± = ±15 V202040608021.510.50?0.5?1?1.5?2T A - Operating Ambient Temperature - ?CINPUT OFFSET VOLTAGEV I O - I n p u t O f f s e t V o l t a g e - m V= ±15 VV ±each 5 samples data806040200?20550530510490470450T A - Operating Ambient Temperature - ?CINPUT BIAS CURRENTI B - I n p u t B i a s C u r r e n t - n A= ±15 VV ±f - Frequency - HzLARGE SIGNAL FREQUENCY RESPONSE V o m - O u t p u t V o l t a g e S w i n g - V p -p 01020301001 k 10 k 100 k 1 M 10 MV = ±15 V±R L = 10 k ?I O - Output Current - mAOUTPUT CURRENT LIMITV O - O u t p u t V o l t a g e - V±±5±10±15T A - Operating Ambient Temperature - ?CSUPPLY CURRENTI C C - S u p p l y C u r r e n t - m A12963204020060800V = ±15 V±SUPPLY CURRENTI C C - S u p p l y C u r r e n t - m A12963±10±20V - Supply Voltage - V±Data Sheet G15977EJ4V0DS7COMMON MODE INPUT VOLTAGE RANGE V I C M - C o m m o n M o d e I n p u t V o l t a g e R a n g e - V 20100±10±20V - Supply Voltage - V±VOLTAGE FOLLOWER PULSE RESPONSE V O - O u t p u t V o l t a g e - V10551002468t - Time - sµV = ±15 V ±A V = 1R L = 2 k ?INPUT NOISE VOLTAGE (FLAT + JIS A)V n - I n p u t N o i s e V o l t a g e - V r .m .s .1001010.1101001 k10 k100 kR S - Source Resistance - ?V = ±15 V±µf - Frequency - HzINPUT EQUIVALENT NOISE VOLTAGE DENSITY e n - I n p u t E q u i v a l e n t N o i s e V o l t a g e D e n s i t y - n V / H z20468100 1 k10 k 100 k10±R S = 100 VTOTAL HARMONIC DISTORTIONT H D - T o t a l H a r m o n i c D i s t o r t i o n - %10.0010.010.10.000110100 1 k10 k 100 kf - Frequency - HzV = ±15 V ±V O = 3 V r.m.s.A V = 1R L = 2 k ?Data Sheet G15977EJ4V0DS8PACKAGE DRAWINGS (Unit: mm)14-PIN PLASTIC DIP (7.62 mm (300))ITEM MILLIMETERS A 19.22±0.22.14 MAX.F I J D 1.32±0.12G 3.6±0.3C B 2.54 (T.P.)0.50±0.10R 0~15°H 0.51 MIN.K 7.62 (T.P.)L 6.4±0.23.554.3±0.2N 0.25NOTES1. Each lead centerline is located within 0.25 mm ofits true position (T.P.) at maximum material condition.2. ltem "K" to center of leads when formed parallel.P14C-100-300B1-3M 0.25+0.10?0.05Data Sheet G15977EJ4V0DS9ITEM B C I 14-PIN PLASTIC SOP (5.72 mm (225))D E G H J PMILLIMETERS 1.27 (T.P.)1.42 MAX.A 10.2±0.264.4±0.10.1±0.10.426.5±0.21.49+0.08?0.071.1±0.163°+7°?3°NOTEEach lead centerline is located within 0.1 mm ofits true position (T.P.) at maximum material condition.F 1.59+0.21?0.2K L M N 0.6±0.20.170.10.10+0.08?0.07S14GM-50-225B, C-6RECOMMENDED SOLDERING CONDITIONSThe µPC4574 should be soldered and mounted under the following recommended conditions.For soldering methods and conditions other than those recommended below, contact an NEC Electronics sales representative.For technical information, see the following website.Semiconductor Device Mount Manual (/doc/015a7dda76a20029bd642de6.html/pkg/en/mount/index.html)Type of Surface Mount DeviceµPC4574G2, 4574G2(5): 14-pin plastic SOP (5.72 mm (225))Process ConditionsSymbol Infrared Ray Reflow Peak temperature: 230°C or below (Package surface temperature),Reflow time: 30 seconds or less (at 210°C or higher),Maximum number of reflow processes: 1 time.IR30-00-1Vapor Phase Soldering Peak temperature: 215°C or below (Package surface temperature),Reflow time: 40 seconds or less (at 200°C or higher),Maximum number of reflow processes: 1 time.VP15-00-1Wave Soldering Solder temperature: 260°C or below, Flow time: 10 seconds or less,Maximum number of flow processes: 1 time,Pre-heating temperature: 120°C or below (Package surface temperature).WS60-00-1Partial Heating Method Pin temperature: 300°C or below,Heat time: 3 seconds or less (Per each side of the device).–Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or thedevice will be damaged by heat stress.Type of Through-hole DeviceµPC4574C, 4574C(5): 14-pin plastic DIP (7.62 mm (300))Process ConditionsWave Soldering (only to leads) Solder temperature: 260°C or below, Flow time: 10 seconds or less.Partial Heating Method Pin temperature: 300°C or below,Heat time: 3 seconds or less (per each lead).Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered.Data Sheet G15977EJ4V0DS10The information in this document is current as of March, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of N EC Electronics products. N ot all products and/or types are available in every country. Please check with an N EC Electronics sales representative for availability and additional information.No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document.NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features.NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific".The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application."Standard":Computers, office equipment, communications equipment, test and measurement equipment, audioand visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. 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Ba sic Medicine中国组织工程研究与临床康复 第 12 卷 第 53 期 2008–12–30 出版 Journal ofCl ini cal Rehabilitative T issue Engineering Research December 30, 2008 V ol.12, No.53Impa ct of in tra ve nous immunoglo bulin to pe na l re a ctive a ntib ody le ve ls in highly s e ns itize d a d ult pa tie nts wa iting for re na l tra n s pla nta tionLia ng Si-min, Wu Xia o-h ou, Yin Zhi-ka ng, Liu Ha ng Abstr actR enal Transplan tation C enter, First Af filiated Hospital of Ch ongq in g Medical University, C hong qing 4000 16, C hina Liang Si-min , Asso ciate p rofessor, Renal Transplantatio n C enter, First Aff iliated Hospital o f C hon gqing Medical University, C hong qing 4 0001 6, Ch in a lsmgj@ R eceived:2 008-0 7-04 Accepted:2008 -09-1 0 ( 07-50 -11-611 8/H) Liang SM, Wu XH, Yin ZK, Liu H. Impact o f intrav en ous immun oglobu lin to penal r eactive an tibo dy lev els in high ly sen sitized adu lt p atients waiting fo r r enal transplantatio n. Zh ongg uo Zuzhi Gon gcheng Yanjiu yu Linch uang Kan gfu 2 008;12 (53): 1 0588 -1059 0(Ch in a) [ http ://www.crter .cn h ttp://en.zg lck f.co m]BAC KG RO UN D: Many methods can reduce panel reactive antibody (PRA) levels in highly sensitized adult patients waiting for renal transplantation. Desensitisation with plasmapheresis or immunoabsorption is commonly used. H owever, the adverse effects limit their applications. O BJECTIV E: To investigate the effect of pretreatment of intravenous immunoglobulin (IVIG ) on PRA levels in highly sensitized adult patients waiting for renal transplantation. DESI GN , TIM E AND SETTIN G: Case analysis, self-contrast of 57 patients waiting for renal transplantation from Renal Transplantation Center, First Affiliated Hospital of Chongqing Medical U niversity betw een January 2003 and November 2006. P ARTIC IPA NTS: Fifty-seven adult patients, who were highly sensitized to the human leucocyte antigen (HLA), aged 21 to 65 years, w ere selected. The average baselines of PRA levels of patients were (46.7± 29.5)%. METH OD S: All patients received IVIG pretreatments at a dose of 5 g/d for 2 weeks, as one course of treatment. A week later, some of them received additional 2 weeks injection of IV IG. The PRA levels of patients were measured before and just after the IVIG treatments. MA IN OU TC OM E MEASURES: PRA levels. RESULTS: It was significantly decreased below the non-sensitive level (< 10%) in 48 candidates (84.2% ), and partially decreased in 6 ones (10.6%), however, was not changed in 3 ones (5. 2%). The total effective rate was 94.8% . Thereafter, each candidate received a cadaveric renal graft. The preoperative complement-dependent cytotoxicity of each candidate was blow 10%. Furthermore, no hyperacute rejection was observed in all 57 recipients. Only two recipients experienced acute rejection, however, that was successfully conversed by methylprednisolone and FK 506 treatments. CO NC LUSIO N: Pretreatment of IVIG is a promising and effective option for lower allosensitization and can improve transplantation in highly sensitized candidates with end-stage renal diseases.INTRODUCTIONRenal transplantation is a preferred treatment for patients with end-stage renal diseases. The benefits have been evidenced by prolonged survival and improved quality of life. In patients with high levels of preformed anti-human leucocyte antigen(HLA) antibodies which are high panel reactive antibody (PRA), and highly sensitized, transplant rates are very low because of the additional immunologic barrier. Approximately 30% of patients on the waiting list are classified as sensitized (PRA >10%), resulted from exposure to non-self HLA antigens; such as blood transfusion, previous transplant, or [1 ] pregnancy etc . These patients always experience an increased number of rejections, episodes and have poorer graft survivals. These patients are destined to remain on the waiting list for extended periods of time on dialysis, and added risk factors [2-4] for patients and graft survivals . The financial and emotional cost of maintaining highly sensitized transplant candidates on dialysis for years are enormous. Thus early transplantation would result in considerable cost saving, reduced morbidity and mortality, and improvement in quality of life. Different approaches have been used to decrease PRA levels in highly sensitized patients. Desensitisation with plasmapheresis or immunoabsorption ma y help to remove anti-HLAantibodies but these methods are associated with a rapid re-emergence of anti-HLA antibodies. In the present study, highly sensitized patients, with high levels of PRA, were pretreated by intravenous immunoglobulin (IVIG) infusions before renal transplantation.SUBJ E CTS AND ME THO DSDe s ig n Contrast before and after treatment, case analysis. Time an d s e tt in g Fifty-seven patients waiting for renal transplantation from Renal Transplantation Center, First Affiliated Hospital of Chongqing Medical University between January 2003 and November 2006. S u b je cts Of 57 highly sensitized (PRA >10%) renal transplant candidates, there were 39 males and 18 females, aged 21- 65 years. Two of them had at least one previous transplant experience. All candidates had received dialysis therapies before entry. The baselines of PRA levels in these patients were (46.7 ± 29.5)% (range 35%- 91%). None of them received blood transfusion or immunosuppression during IVIG treatments. Written informed content was obtained f rom all105 88P.O . Bo x 1200 , Shen yang110004Liang SM, et al. Impact ofintravenous immunoglobulin to pe na l rea ctive antibody leve ls in highly se nsitized adult …patients based on the Administrative Regulations on Medical Institution[ 5], and the study was approved by the ethics committee of hospital. Me th o d s IVIG trea tm en t All candidates received IVIG pretreatments at a dose of 5 g per day for 2 weeks, as one course of treatment. A week later, some of them received an additional 2 weeks course of IVIG. This treatment would be ceased when the PRA level in candidate was decreased blow 10%, as well as, when the candidate got an ideal donor. P RA t es t Serum samples were analyzed before, as well as immediately after the last IVIG infusion. To quantify the PRA levels in candidates, serum samples were tested by ELISA with LAT1240 kit according to manufacture instruction (One Lambda, Int., CA, USA). Im mu n o s u p p res s io n fo r tran s p la n ta tio n Each patient received a triple immunosuppression protocol which consisted of calmodulin inhibitors [Cyclosporine A (CSA) or Tacrolimus (FK506)], mycophenolate mofetil (MMF) and steroid. An intraoperative bolus of methylprednisolone (MP) was given intravenously at a dose of 500 mg after reperfusion of the graft. Thereafter, MP was administered intravenously at a dose of 500 mg/d on postoperative day 1 to day 3. Prednisone was administered orally at a dose of 60 mg/d from day 4. It was gradually reduced to 10-15 mg/d, as a maintenance dosage. CSA was administered orally when the serum creatinine level in the recipient decreased blow 400 μmol/L. The induction dose of CSA was 5 mg/kg per day. The dose of CSA was gradually reduced to maintain the target trough level of 200-250 ng/mL. The maintenance dose of CSA was 1-3 mg/kg per day. Oral MMF was given started from postoperative day 2 at a dose of 1 g/d. In two recipients who experienced acute rejection CSA was withdrew immediately, and MP was administered intravenously at a dose of 500 mg/d for 3 days. Simultaneously, FK506 was given at an induction dose of 0.1 mg/kg per day. The target trough level of FK506 was 5-10 ng/L. Ma in o u t co m e m ea s u res Serum PRA levels. De s ig n , e nfo rc em en t a n d e valu at io n The experiment was designed, performed and evaluated by all authors. St atis tica l a n aly s is All continuous variables were described as Mean± SD. The difference between baseline and post-treatment level was analyzed by self-comparing pared data t-test. A P value less than 0.05 was considered statistically significant.IVIG effec t Of 57 patients, 36 candidates (63.2%) received 1 course of IVIG treatment, 15 (26.3%) received 2 courses, and the other 6 (10.6%) received 3 courses. After the pretreatments of IVIG, the PRA level was decreased 0- 61% (mean 38.4%± 16.3%) compared to the baseline (P < 0.01). The PRA levels were significantly decreased below the non-sensitive level (< 10%) in 48 candidates (84.2%), slightly decreased in 6 (10.6%), and did not change in 3 (5.2%). The total effective rate was 94.8%. Fifty-seven patients received a cadaveric renal graft. The preoperative complement-dependent cytotoxicity of each candidate was blow 10%. Furthermore, no hyperacute rejection took place in any recipient. Only two recipients (3.5%) experienced acute rejection, which was successfully conversed by methylprednisolone (MP) and FK506 treatments. In additions, no side effects were observed during IVIG pretreatment courses.DIS CUS SIO NHighly sensitized patients are less likely to receive a transplant, thus, more likely to experience an increased number of rejections, episodes and have poorer graft survivals. Patients with an elevated PRA are destined to remain on the waiting list. According to the report of Jordan et al [4], those patients, who receive a transplant from a living donor or cadaver source, have a significantly shorter graft half-life compared to non-sensitized patients (12.9 years vs. 15.2 years, and 9.0 years vs. 9.7 years respectively). Commercially available IVIG preparation is divided from pooled plasma of healthy human beings. It has been shown to contain anti-idiotypic antibodies able to neutralize autoantibodies in selected autoantibody-mediated autoimmune diseases, and to down regulate the synthesis of antibodies by B cells that express the relevant idiotype. It has been proved that IVIG preparation has efficacy in a number of auto-immune diseases such as idiopathic thrombocytopenic purpura, haemolytic anaemia, and autoimmune neutropenia[ 6]. Furthermore, several recent reports support that IVIG preparation can significantly inhibit anti-HLA immune response, which takes place in allograft transplant recipients, in animal model and clinical trial, as well as, in vitro and vivo. In our study, pretreatment of IVIG significantly decreased the level of preformed anti-HLA antibodies in highly sensitized candidates waiting for renal transplantation, and the total effective rate was 94.8%. Thereafter, all candidates received a successfully transplantation. Moreover, no hyperacute rejection was observed in any recipient. Mechanisms of action of IVIG in highly sensitized patients have been noted on several studies, including ① modification of autoantibody and alloantibody levels through anti-idiotypic circuits, ② inhibition of cytokine gene activation and/or anticytokine activity, ③ inhibition of interferon-γ induction, ④inhibition of T-cell activation through blockade of T-cell receptor/antigen-presenting cell interactions (possibl y through anti-T cell receptor-vβ activit y, ⑤F c receptor-mediated interactions with resultant inhibition of antibody production and T-cell activation, ⑥ 105 89RES ULTSQ u an t ita tive an a ly s is o f p a rticip an ts F if ty-seven patients were all included in the final anal ysis.ISSN 1 6 73 -822 5 CN 21-1 53 9/R CODEN: ZLKHAHLia ng SM, e t a l. Impa ct of intra venous immunoglobulin to pena l re active a ntibody levels in highly sensitized a dult …anti-CD4 activity, ⑦ stimulation of cytokine receptor antagonists, and ⑧ inhibition of complement activity [ 7-9]. The major advantage of IVIG is its relative freedom from major side effects, especially infection risk. However, only a few side effects of IVIG were noted. One potential side effect is osmotic nephrosis related to the high sucrose content of the preparation, leading to acute renal failure[10] . In the present study, no side effects were observed. The inherent antiviral properties of IVIG would be useful in patients who are high risk candidates for developing infections like cytomegalovirus infection [11]. In fact, one important use of IVIG is to treat infectious diseases in immunocompromised hosts [6]. The chief obstacle to widespread use of IVIG therapy is its high cost. It can be administered in an outpatient setting and does not require central venous access or intensive monitoring as with monoclonal antibody therapy. Another advantage of IVIG is repeatability. In the present study, 36.8% candidates received at least 2 courses of IVIG treatment, finally, they all received a ideal donor and had a good graft function evaluated by serum creatinine level. The effective constituent of IVIG preparation is IgG, polyclonal antibodies reformed in healthy human. Monoclonal antibody preparations, such as OKT3, have been frequently used as an induction or postoperative treatment for organ transplantations. A randomized study, enrolling 30 patients with steroid resistant acute rejection, demonstrated that acute rejection was reversed in 73% of IVIG treatment group and in 86% of OKT3 group. There were no statistically significant differences in the creatinine levels at baseline, 1 month post-treatment, and 3 months post-treatment, or in the 2-year graft and patient survival [12] . However, the monoclonal antibodies preparations show more side effects than IVIG . In summary, pretreatment of IVIG in candidates of renal transplantation is a promising and effective option for lower allosensitization and can improve transplantation in highlysensitized candidates with end-stage renal diseases. It is more repeatable and safe compared to monoclonal antibody preparations.RE FE RE NCES1 Jordan SC, Tyan D, St ablei n D, et al. Eval uation of intravenous i mmunoglobulin as an agent to lower allosensitizati on and improve t rans pl antation in highly sensit ized adult patient s wit h end-st age renal disease: report of the NIH IG02 t rial. J Am Soc Nephrol 2004;15(12): 3256-3262 Col vi n RB, Smith RN. Antibody-mediated organ-al lograft rejection. Nat R ev Immunol 2005;5(10):807-817 Takemoto SK, Zeevi A, Feng S, et al . Nat ional conference t o assess antibody-medi ated rejection in solid organ transplantat ion. Am J Transplant 2004;4(7): 1033-1041 Jordan S, Cunningham-Rundles C , McEwan R. Utili ty of i nt ravenous i mmune gl obuli n in kidney transplantati on: efficacy, safety, and cost i mpl ications. Am J Transplant 2003; 3(6):653-664 St ate Council of the P eople's Republ ic of China. Adminis trative Regulati ons on Medi cal Inst itution. 1994-09-01. Kazatchkine MD, Kaveri S V Immunomodulation of autoimmune and . i nflammatory di seas es with intravenous i mmune gl obul in. N Engl J Med. 2001;345(10):747-755 Leech SH, Lopez-Cepero M, LeFor WM, et al. Management of the sensitized cardi ac recipient: the use of pl asmapheresis and int ravenous i mmunoglobulin. Cli n Transplant 2006;20(4): 476-484 Jordan SC, Vo AA, P enga A, et al . Intravenous gamma globulin (IVIG)：A novel approach to improve t ranspl ant rates and out comes in highly HLA-sensiti zed patients. Am J Transplant 2006; 6(3):459-466 St egal l MD, Gloor J, Winters JL, et al. A comparis on of plasmapheres is versus high-dose IVIG desensitizati on i n renal allograft recipi ents with high levels of donor specific alloantibody. Am J Transplant 2006;6(2):346-351 Tsi nalis D, Dickenmann M, Brunner F, et al . Acute renal fail ure in a renal al lograft recipient treated with intravenous i mmunoglobulin. Am J Kidney Dis 2002; 40(3):667-670 Moger V Ravishankar MS, S akhuja V, et al. Int ravenous , i mmunoglobulin: a safe option for t reatment of st eroi d-resi stant rej ect ion in the presence of infection. Transplantati on 2004;77(9): 1455-1456 Golberg JC, Argento JA, Greco G, et al. A randomized and prospective st udy compari ng t reatment wit h hi gh-dose i nt ravenous i mmunoglobulin with monoclonal antibodies for rescue of kidney grafts with steroid-resist ant reject ion. Transplantation 2001;71(1): 53-582 345 6789101112静脉滴注免疫球蛋白对肾移植患者群体反应抗体的影响梁思敏，吴小候，尹志康，刘 航( 重庆医科大学附属第一医院肾 移植中心，重庆市 400016)梁思敏，男，1968 年生，重庆市人，汉族， 副教授，主要从事肾 移植的研究。
