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IRM-8755-H3中文资料

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EVERLIGHT ELECTRONICS CO., LTD.
DATA SHEET
MODEL NO IRM-8755-H3
DATE JUL,07,2000
DEPARTMENT R&D 2
REVISION 1.2
RECEIVED
MASS PRODUCTION
PRELIMINARY
CUSTOMER DESIGN
DEVICE NUMBER : DMO-870-011
PAGE : 8
CUSTOMER DESIGNER CHECKER APPROVER
1.2Adding package specifications JUL,07,2000
REV DESCRIPTION RELEASE DATE
OFFICE: NO 25,Lane 76,Chung Yang Rd, Sec.3 Tucheng, Taipei 236, Taiwan, R.O.C.
TEL : 886-2-2267-2000,2267-9936 ( 22 Lines )
FAX : 886-2-2267-6189
ECN : PAGE : 1/8 Infrared Remote-control Receiver Module
MODEL NO :IRM-8755-H3
Features :
High protection ability to EMI and metal case can be customized.
Mold type and metal case type to meet the design of front panel.
Elliptic lens to improve the characteristic against
Line-up for various center carrier frequencies.
Low voltage and low power consumption.
High immunity against ambient light.
Photodiode with integrated circuit.
TTL and CMOS compatibility.
Long reception distance.
High sensitivity.
Description :
The device is a miniature type infrared remote control system receiver which has been developed and designed by utilizing the most updated IC technology. The PIN diode and preamplifier are
assembled on lead frame, the epoxy package is designed as an IR filter. The demodulated output signal can directly be decoded by a microprocessor.
Applications :
1. Optical switch
2. Light detecting portion of remote control
AV instruments such as Audio, TV, VCR, CD, MD, etc.
Home appliances such as Air-conditioner, Fan , etc.
The other equipments with wireless remote control.
CATV set top boxes
Multi-media Equipment
PART MATERIAL COLOR
Chip Silicon Black
Shell Tinplate Silver-white
ECN : PAGE : 2/8 Infrared Remote-control Receiver Module
MODEL NO :IRM-8755-H3
NOTES
5. Lens color: Black.
specification sheets.
ECN : PAGE : 3/8 Infrared Remote-control Receiver Module
MODEL NO :IRM-8755-H3
Absolute Maximum Ratings at T A = 25
Parameter Symbol Rating Unit Notice Supply Voltage Vcc0~6V
Operating Temperature Topr-30 ~ +85
Storage Temperature Tstg-40 ~ +85
Soldering Temperature Tsol260 4mm from mold body
less than 5 seconds Electronic Optical Characteristics : T A = 25 Parameter Symbol MIN.TYP.MAX.Unit Condition Supply Voltage Vcc 4.55 5.5V DC voltage
Supply Current Icc------3mA No signal input
B.P.F Center Frequency Fo---38---KHz
Peak Wavelength
p
---940---nm
8------Reception Distance
4------m
Half Angle(Horizontal)
h
---45---deg
Half Angle(Vertical)
v
---35---deg
High Level Pulse Width T
H
400---800 s
Low Level Pulse Width T
L 400---800 s
High Level Output
Voltage V
H
4.5------V
Low Level Output
Voltage V
L
---0.20.5V
Infrared Remote-control Receiver Module
MODEL NO :IRM-8755-H3
Appendix of Page 3
*1:The ray receiving surface at a vertex and relation to the ray axis in the range of θ= 0° and θ=45°. *2:A range from 30cm to the arrival distance. Average value of 50 pulses.
Test Method
The specified electro-optical characteristics is satisfied under the following
Conditions at the controllable distance.
!Measurement place
A place that is nothing of extreme light reflected in the room.
"External light
Project the light of ordinary white fluorescent lamps which are not high
Frequency lamps and must be less then 10 Lux at the module surface.
(Ee 10Lux)
#Standard transmitter
A transmitter whose output is so adjusted as to Vo=400mVp-p and the output
Wave form shown in Fig.-1.According to the measurement method shown in
Fig.-2 the standard transmitter is specified.
Infrared Remote-control Receiver Module MODEL NO :IRM-8755-H3
DEVICE NUMBER : DMO-870-011 REV : 1.2
ECN : PAGE : 7/8 Infrared Remote-control Receiver Module
MODEL NO :IRM-8755-H3
Reliability Test Item And Condition
The reliability of products shall be satisfied with items listed below.
Confidence level: 90%
EVERLIGHT ELECTRONICS CO., LTD.
DEVICE NUMBER : DMO-870-011 REV : 1.2
ECN : PAGE : 8/8 Infrared Remote-control Receiver Module
MODEL NO :IRM-8755-H3 Array Packing Quantity Specification
1. 200 Pcs/1Bag 5 Bags/1Box
2. 10 Boxes/1Carton。

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三极管参数

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深圳市恒丰德电子有限公司
SHENZHEN HIGHFOUND CO., LTD
摘要
恒丰德公司 WINSEMI 产品线 产品特性 抗冲击特性比较 导通压降特性比较 SCR特性比较 MCR温度特性曲线 BJT的开关时间比较 可靠性测试标准
2
WINSEMI产品线
3
WINSEMI产品
Power BJT 分离式 功率器件产品线
漏极电流ID
漏源极电压VDS
VV X10= VDS
注：其中有几颗常规料沿袭了IR公司的编码如：640(18N20); 730(6N40); 740(10N40); 830(5N50); 840(8N50); 3710(59N10)
10
POWER MOSFET-功率场效应管（1）
11
POWER MOSFET-功率场效应管（2）
TO202-3
TO126 TO252
TO220Insulated
Z0405MF
TO220
WTPA12A60TW STPB12A60TW
TO220Insulated TO220
BTA12-600TW BTB12-600TW MAC12-8FP BTA212-600E
注： ST尾缀 S<5mA; T<10mA; B<35mA; C<50mA PHI尾缀 D<5mA; E<10mA; F<25mA; 空<35mA; G<50mA
It gives : a narrow current gain to minimize asymmetry switching which induce device to destruct. 较小的电流增益使开关电源的不对称减到最小。 a wide forward biased SOA and reverse biased SOA. a enhanced switching speed and low dynamic Vce(sat) which makes system efficiency high. 更快的交换速度以及稳定的集电极-发射极电压，使系统效率更高，更稳定
YS8152B RS485 硫化氢传感器说明书

YS8152B RS485 硫化氢传感器说明书

YS8152BRS485 硫化氢传感器说明书使用前请详细阅读说明书YS8152B硫化氢气体传感器为RS485总线式传感器，采用RS485接口，标准MODBUS-RTU协议，可实现多点同时监测，组网并远距离传送数据。

适用于各种场所,尤其适用于公共场合、工厂、仓库等需要硫化氢气体监控的场所。

为便于工程组网及工业应用，本模块采用工业广泛使用的MODBUS-RTU通讯协议，支持二次开发。

用户只需根据通讯协议即可使用任何串口通讯软件实现模块数据的查询和设置。

YS8152B 硫化氢传感器采用专业测试硫化氢气体浓度传感器探头作为核心检测器件；具有测量范围宽、精度高、线性度好、通用性好、使用方便、便于安装、传输距离远、价格适中等特点。

硫化氢是一种易燃的酸性气体，无色，低浓度时有臭鸡蛋气味。

硫化氢是一种重要的化学原料。

用于合成荧光粉，电放光、光导体、光电曝光计等的制造。

有机合成还原剂。

用于金属精制、农药、医药、催化剂再生、通用试剂、制取各种硫化物。

硫化氢气是强烈的神经毒素，并能引起人们的嗅觉麻痹。

吸入少量高浓度硫化氢可于短时间内致命。

低浓度的硫化氢对眼、呼吸系统及中枢神经都有影响。

在空气中含量超过50PPM就会影响人们的身健康，当超过200PPM时就会直接危害人类的生命安全。

为保护自然环境和工业生产安全，针对性开发出这一款硫化氢气传感器。

硫化氢气浓度实时显示，提醒及时检查并打开通风或采取安全措施。

并可订做带自动控制输出功能，自动打开风机换气或报警。

并对多种有害气体（一氧化碳、氨气）也有很好的敏感性，有利于及时避免火灾等各种隐患。

也可以使用在工厂、仓库等需要硫化氢气体浓度监测控制的场合。

注意事项：1、避免暴露在有机硅蒸气中。

如果传感器的表面吸附了有机硅蒸气，传感器的敏感材料会被包裹住，抑制传感器的敏感性，并且不可恢复。

传感器要避免暴露其在硅粘接剂、发胶、硅橡胶、腻子或其它含硅塑料添加剂可能存在的地方。

2、避免暴露在高腐蚀性的环境。

IRLR2905中文资料

IRLR2905中文资料

IRLR/U2905HEXFET ®Power MOSFETParameterTyp.Max.UnitsR θJC Junction-to-Case––– 1.4R θJA Case-to-Ambient (PCB mount)**–––50°C/WR θJAJunction-to-Ambient–––110Thermal ResistanceDescription12/8/00 1D -P ak T O -252AAI-Pak TO -251AAl Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR2905)l Straight Lead (IRLU2905)l Advanced Process Technology l Fast SwitchinglFully Avalanche RatedFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,provides the designer with an extremely efficient device for use in a wide variety of applications.The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.** When mounted on 1" square PCB (FR-4 or G-10 Material ) .For recommended footprint and soldering techniques refer to application note #AN-994ParameterMax.UnitsI D @ T C = 25°C Continuous Drain Current, V GS @ 10V 42 I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 30A I DMPulsed Drain Current 160P D @T C = 25°C Power Dissipation 110W Linear Derating Factor 0.71W/°C V GS Gate-to-Source Voltage± 16V E AS Single Pulse Avalanche Energy 210mJ I AR Avalanche Current25A E AR Repetitive Avalanche Energy 11mJ dv/dt Peak Diode Recovery dv/dt 5.0V/ns T J Operating Junction and-55 to + 175T STGStorage Temperature RangeSoldering Temperature, for 10 seconds300 (1.6mm from case )°CAbsolute Maximum RatingsPD- 91334EIRLR/U2905IRLR/U2905IRLR/U2905IRLR/U2905IRLR/U2905IRLR/U2905IRLR/U2905IRLR/U2905IRLR/U2905。

R585中文资料

R585中文资料

ElectrodeK G Dy1Dy2Dy3Dy4Dy5Dy6Dy7Dy8Dy9Dy10Dy11PDy12Ratio 40 2.5 1.51111111111Anode characteristics are measured with the voItage distribution ratio shown below.SuppIy Voltage:1000Vdc, K:Cathode, Dy:Dynode, G:Grid, P:AnodeNOTE:VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGElnformation furnished by HAMAMATSU is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1996 Hamamatsu Photonics K.K.Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.PHOTOMULTlPLlER TUBES R464,R5850.01100TPMHB0347EATPMHB0349EATPMHB0348EA0.1110WAVELENGTH (nm)C A T H O D E R A D I A N T S E N SI T I V I T Y (m A /W )Q U A N T U M E F F I C I E N C Y (%)Figure 1: Typical Spectral ResponseFigure 2: Typical GainFigure 3: Typical Single Pulse Height Distribution of Dark CurrentFigure 4: Dimensional Outline and Basing Diagram(Unit:mm)104105106107108109SUPPLY VOLTAGE (V)G A I N010245127681.00.80.60.40.2D I S C R I M I N A T I O N LE V ELDARKSIGNAL+DARKWAVELENGTH OF INCIDENT LIGHT SUPPLY VOLTAGE LOWER LEVEL DISCRI PHOTON+DARK COUNTSDARK COUNTSAMBIENT TEMPERATURE: 400nm : 790V : 74ch: 5000cps : 5cps : 25°CTPMHA0216EBKBOTTOM VIEW (BASING DIAGRAM)Socket(E678 – 21A)TACCA0011EATPMH1140E02JUN. 1998HAMAMATSU PHOTONICS K.K., Electoron Tube Center314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741。