AO4411

常用P沟道场效应管大全AO P沟道场效应管系列:AO3401,3401 AO SOT-23 P场 -30V -4.2AAO3403L,AO3403,3403 AO SOT-23 P场 -30V -2.6A AO3407,3407 AO SOT-23 P场 -30V -4.1AAO3409,3409 AO SOT-23 P场 -30V -2.6AAO3413L,AO3413,3413 AO SOT-23 P场 -20V -3A AO3415,3415 AO SOT-23 P场 -20V -4AAO3419,3419 AO SOT-23 P场 -20V -3.5AAO4401,4401 AO SOP-8 P场 -30V -6.1AAO4403,4403 AO SOP-8 P场 -30V -6.1AAO4405,4405 AO SOP-8 P场 -30V -6AAO4407,4407 AO SOP-8 P场 -30V -12AAO4411,4411 AO SOP-8 P场 -30V -8AAO4413,4413 AO SOP-8 P场 -30V -15AAO4415,4415 AO SOP-8 P场 -30V -8AAO4419,4419 AO SOP-8 P场 -30V -9.7AAO4423L,AO4423,4423 AO SOP-8 P场 -30V -15A AO4425,4425 AO SOP-8 P场 -38V -14AAO4429,4429 AO SOP-8 P场 -30V -15AAO4433L,AO4433,4433 AO SOP-8 P场 -30V -11A AO4437,4437 AO SOP-8 P场 -12V -11AAO4701L,AO4701,4701 AO SOP-8 P场 -30V -5AAO6401,6401 AO TSOP-6 P场 -30V -5AAO6405,6405 AO TSOP-6 P场 -30V -5AAO6409,6409 AO TSOP-6 P场 -20V -5AAO6419,6419 AO TSOP-6 P场 -30V -5AAO6701L,AO6701,6701 AO TSOP-6 P场 -30V -2.3AAO7401L,AO7401,7401 AO SOT-323 P场 -30V -1.2AAOD403,D403 AO SOT-252 P场 -30V -85AAOD405,D405 AO SOT-252 P场 -30V -18AAOD407,D407 AO SOT-252 P场 -60V -12AAOD409,D409 AO SOT-252 P场 -60V -26AAOU401,U401 AO TO-251 P场 -60V -20AAOU417,U417 AO TO-251 P场 -30V -18AAP/富鼎 P沟道场效应管系列:AP40P03GH,AP40P03,40P03GH,40P03,SOT-252,AP/富鼎,05NPB,SMD/MOS,-30V,-30A,0.028ΩAP4435M,AP4435M,4435M AP/富鼎 SOP-8 P场 -30V -8AAP9575H,AP9575,9575H AP/富鼎 SOT-252 P场 -60V -15AAP6679H,AP6679,6679H AP/富鼎 SOT-252 P场 -30V -75AAP9563H,AP9563,9563H AP/富鼎 SOT-252 P场 -40V -2.6A AP6679P,AP6679P,6679P AP/富鼎 TO-220 P场 -30V -75AAP20P02GJ,AP20P02,20P02GJ AP/富鼎 TO-251 P场 -20V -18ACET/华瑞 P沟道场效应管系列:CEB05P03,05P03 CET/华瑞 SOT-263 P场 -30V -5A FAIRCHILD/仙童 P沟道场效应管系列:NDB6030PL,SOT-263,FAIRCHILD,SMD/MOS,P场,-30V,-30A,0.025Ω NDB6020P,SOT-263,FAIRCHILD,SMD/MOS,P场,-20V,-24A,0.05ΩFDR838P SOP-8 FAIRCHILD SMD/MOS P场 -20V -8A 0.017ΩFDR838 SOP-8 FAIRCHILD SMD/MOS P场 -20V -8A 0.017Ω838P SOP-8 FAIRCHILD SMD/MOS P场 -20V -8A 0.017ΩFDS4435 FAIRCHILD SOP-8 P场 -30V -9AFDS6685 FAIRCHILD SOP-8 P场 -30V -8.8ANDS8435 FAIRCHILD SOP-8 P场 0 0NDS9435A,NDS9435 FAIRCHILD SOP-8 P场 -30V -5.3A FDN336P,FDN336 FAIRCHILD SOT-23 P场 -30V -1.3AFDN340P,FDN340 FAIRCHILD SOT-23 P场 -20V -2ANDC652P,NDC652 FAIRCHILD SOT-23-6 P场 -20V -1.3AD10P05 FAIRCHILD SOT-252 P场 -50V -10AD15P05 FAIRCHILD SOT-252 P场 -50V -15AFDD5614P,FDD5614 FAIRCHILD SOT-252 P场 -60V -15AFDD6637 FAIRCHILD SOT-252 P场 -35V -55AFQD17P06,17P06,D17P06 FAIRCHILD SOT-252 P场 -60V -17A FQD3P50,3P50,D3P50 FAIRCHILD SOT-252 P场 -500V -2.1A RFD10P03L,RFD10P03,10P03 FAIRCHILD SOT-252 P场 -30V -10ASFR9034 FAIRCHILD SOT-252 P场 -60V -14ASFR9224TM,SFR9224 FAIRCHILD SOT-252 P场 -250V -2.5ASFR9310 FAIRCHILD SOT-252 P场 -400V -1.5ANDB6030PL,NDB6030 FAIRCHILD SOT-263 P场 -30V -30ARFP15P05,15P05 FAIRCHILD TO-220 P场 -50V -15ASFP9634 FAIRCHILD TO-220 P场 -250V -5ASFS9630 FAIRCHILD TO-220F P场 -200V -6.5ASFS9634 FAIRCHILD TO-220F P场 -250V -3.4AFQU11P06TU,FQU11P06,11P06 FAIRCHILD TO-251 P场 -60V -11A FQU17P06,U17P06,17P06 FAIRCHILD TO-251 P场 -60V -12A RFD15P05,15P05 FAIRCHILD TO-251 P场 -50V -15A SFU9214 FAIRCHILD TO-251 P场 -250V -2.7ARFD17P06,17P06 FAIRCHILD TO-251短 P场 -60V -17AHIT P沟道场效应管系列:2SJ295,J295 HIT TO-220F P场 -60V -30A2SJ528S,2SJ528,J528 HIT SOT-252 P场 -60V -7A2SJ245,J245 HIT SOT-252 P场 -60V -5A2SJ529,J529 HIT SOT-252 P场 0 0infineon/英飞凌 P沟道场效应管系列:IPP100P03P3L-04,IPP100P03P3L,IPP100P03,100P03,TO-220, infineon,08NPB,P场,-30V,-100A,0.0043Ω3P03L04,TO-220,infineon,08NPB,P场,-30V,-100A,0.0043ΩSPD08P06P,SPD08P06,D08P06 infineon SOT-252 P场 -60V -8.8ASPD09P06P,SPD09P06,09P06 infineon SOT-252 P场 -60V -9ASPD18P06P,SPD18P06,18P06 infineon SOT-252 P场 -60V -18ASPD30P06P,SPD30P06,30P06 infineon SOT-252 P场 -60V -30ASPD50P03L,SPD50P03,50P03 infineon SOT-252-5 P场 -30V -50ASPB08P06P,SPB08P06,08P06 infineon SOT-263 P场 -60V -8A SPB80P06P,SPB80P06,80P06 infineon SOT-263 P 场 -60V -80Aintersil P沟道场效应管系列:IRF9540S,IRF9540,F9540 intersil SOT-263 P场 -100V -23ARFD10P03L,RFD10P03,10P03 intersil TO-251 P场 -30V -10AIR P沟道场效应管系列:IRL5602STRR,SOT-263,IR,SMD/MOS,-20V,-24A,P场,0.042ΩIRF9510STRL,SOT-263,IR,SMD/MOS,-100V,-4A,P场,1.2ΩIRFL9014,FL9014 IR SOT-223 P场 -60V -1.8A IRLML6401,LML6401 IR SOT-23 P场 12V 4.3AIRFR5305PBF,IRFR5305,FR5305 IR SOT-252 P场 -55V -31AIRFR5505,FR5505 IR SOT-252 P场 -55V -18A IRFR6215,FR6215 IR SOT-252 P场 -150V -13AIRFR9014N,IRFR9014,FR9014,FR9014N IR SOT-252 P场 -60V -5.1A IRFR9024N,FR9024N,IRFR9024 IR SOT-252 P场 -60V -8.8AIRFR9024NTRPBF,IRFR9024NTR,FR9024 IR SOT-252 P场 -60V -8.8AIRFR9110N,IRFR9110,FR9110 IR SOT-252 P场 -100V 3.1AIRFR9120N,IRFR9120,FR9120N,FR9120 IR SOT-252 P -100V -5.6A IRFR9210,FR9210 IR SOT-252 P场 -200V -1.9AIRFR9220,FR9220 IR SOT-252 P场 -200V -3.6AIRF4905NS,F4905NS IR SOT-263 P场 -55V -64AIRF5305STRL,IRF5305S,F5305S IR SOT-263 P场 -55V -31AIRF9530NS,F9530NS IR SOT-263 P场 -100V -14AIRF9640NS,IRF9640N,F9640NS IR SOT-263 P场 -200V -11AIRF9Z34S,F9Z34S IR SOT-263 P场 -60V -18AIRL5602S,IRL5602,L5602S,L5602 IR SOT-263 P场 -20V -24AIRF4905PBF,IRF4905,F4905 IR TO-220 P场 -55V -74AIRF5305PBF,IRF5305,F5305 IR TO-220 P场 -55V -31AIRF9510,F9510 IR TO-220 P场 -100V -4A IRF9530,F9530 IR TO-220 P 场 -100V -14AIRF9540N,F9540N,IRF9540,IRF9540PBF IR TO-220 P场 -100V -23AIRF9610,F9610 IR TO-220 P场 -200V -1.8AIRF9640,F9640 IR TO-220 P场 -200V -11AIRF9Z34PBF,IRF9Z34,F9Z34 IR TO-220 P场 -60V -18AIRFI9630G,IRFI9630,FI9630 IR TO-220F P场 -200V -4.3AIRFU5505,FU5505 IR TO-251 P场 -55V -18AIRFU9024N,IRFU9024,FU9024N,FU9024 IR TO-251 P场 -60V -8.8A IRFU9220N,IRFU9220,FU9220N,FU9220 IR TO-251 P场 -200V -3.6AIRF4905S,F4905S IR TO-262 P场 -55V -64A MOT P沟道场效应管系列: MTB50P03HDLT4G,MTB50P03,50P03 MOT SOT-263 P场 -30V -50A NRC P沟道场效应管系列:2SJ132,J132 NEC TO-251 P场 -30V -2A2SJ325,J325 NEC TO-251 P场 -30V -4A2SJ325-Z-E2,2SJ325-Z,J325-Z NEC SOT-252 P场 -30V -4A2SJ326,J326 NEC TO-251 P场 -60V -2A2SJ327-Z,2SJ327,J327-Z,J327 NEC SOT-252 P场 -60V -4A2SJ460TA,2SJ460,J460 NEC TO-92S P场 -50V -0.1A2SJ599,J599 NEC TO-251 P场 -60V -20A2SJ600-Z,2SJ600,J600-Z,J600 NEC SOT-252 P场 -20V -25AON P沟道场效应管系列:NTF2955T1,NTF2955 ON SOT-223 P场 -60V -1.2ANTD2955 ON SOT-252 P场 -60V -12ANTD25P03LT4,NTD25P03L,NTD25P03,D25P03L,D25P03,25P03 ON SOT-2 52 P场 -30V -25ANTD20P06LT4,NTD20P06L,NTD20P06,D20P06L,D20P06,20P06 ON SOT-2 52 P场 -60V -20ASANYO P沟道场效应管系列:2SJ653,J653,SANYO,-60V,-37A,P MOS,25mΩ 2SJ634,J634 SANYO SOT-252 P场 -60V -8A2SJ591,J591 SANYO TO-220F P场 -60V -28A 2SJ652,J652 SANYO TO-220F P场 -60V -28A2SJ653,J653 SANYO TO-220F P场 -60V -37ATM P沟道场效应管系列:TM9435AD,TM9435 TM SOT-252 P场 -30V -10ATOSHIBA/东芝 P沟道场效应管系列:TPC6103,SOT-23-6, -12V, -5.5A,0.035Ω2SJ377-Z,2SJ377,J377-Z,J377 TOSHIBA SOT-252 P场 -60V -5A2SJ439-Z,2SJ439,J439-Z,J439 TOSHIBA SOT-252 P场 -16V -5A VISHAY/威士 P沟道场效应管系列:SUM110P04-04L-E3,SUM110P04,110P04 VISHAY SOT-263 P场 -40V -110ASUP75P05-08,SUP75P05,75P05 VISHAY TO-220 P场 -50V -75A SUP75P03-07,SUP75P03,75P03 VISHAY TO-220 P场 -30V -75A SUP65P04-15-E3,SUP65P04,65P04 VISHAY TO-220 P场 -40V -65A SI4467DY-T1,SI4467DY,SI4467 VISHAY SOP-8 P场 -12V -12A茂达 P沟道场效应管系列:APM3095P,APM3095 茂达 SOT-252 P场 -30V -6A。

PCS-9705A/B/C 系列 测控装置 说明书
PCS-9705 系列测控装置
前言 使用产品前，请仔细阅读本章节！
本章叙述了使用产品前的安全预防建议。在安装和使用时，本章内容必须全部阅读且充分理解。 忽略说明书中相关警示说明，因不当操作造成的任何损害，本公司不承担相应责任。 在对本装置做任何操作前，相关专业人员必须仔细阅读本说明书，熟悉操作相关内容。 操作指导及警告 本手册中将会用到以下指示标记和标准定义： 危险! 意味着如果安全预防措施被忽视，则会导致人员死亡，严重的人身伤害，或
南京南瑞继保电气有限公司
i
PCS-9705 系列测控装置
警告！ 曝露端子 在装置带电时不要触碰曝露的端子等，因为可能会产生危险的高电压。 残余电压 在装置电源关闭后，直流回路中仍然可能存在危险的电压。这些电压需在数秒钟后才会消失。 警示！ 接地 装置的接地端子必须可靠接地。 运行环境 该装置只允许运行在技术参数所规定的大气环境中，而且运行环境不能存在不正常的震动。 额定值 在接入交流电压电流回路或直流电源回路时，请确认他们符合装置的额定参数。 印刷电路板 在装置带电时，不允许插入或拔出印刷电路板，否则可能导致装置不正确动作。 外部回路
当把装置输出的接点连接到外部回路时，须仔细检查所用的外部电源电压，以防止所连接的回 路过热。 连接电缆 仔细处理连接的电缆避免施加过大的外力。
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AO3400Not for new designs AO3400A SOT23-3Single General Purpose N No No 30AO3400A Full ProductionSOT23-3Single General Purpose N No No 30AO3401Not for new designs AO3401ASOT23-3Single General Purpose P No No -30AO3401A Full Production SOT23-3Single General Purpose P No No -30AO3402Full Production SOT23-3Single General Purpose N No No 30AO3403Full ProductionSOT23-3Single General Purpose P No No -30AO3404Not for new designs AO3404ASOT23-3Single General Purpose N No No 30AO3404A Full Production SOT23-3Single General Purpose N No No 30AO3406Full ProductionSOT23-3Single General Purpose N No No 30AO3407Not for new designs AO3407ASOT23-3Single General Purpose P No No -30AO3407A Full Production SOT23-3Single General Purpose P No No -30AO3409Full Production SOT23-3Single General Purpose P No No -30AO3413Full Production SOT23-3Single General Purpose P No No -20AO3414Full ProductionSOT23-3Single General Purpose N No No 20AO3415Not for new designs AO3415ALSOT23-3Single General Purpose P Yes No -20AO3415AL NewSOT23-3Single General Purpose P Yes No -20AO3416Full Production SOT23-3Single Load Switch N Yes No 20AO3418Full Production SOT23-3Single SMPSN No No 30AO3419Full Production SOT23-3Single General Purpose P Yes No -20AO3420Full Production SOT23-3Single Load Switch N No No 20AO3421Full Production SOT23-3Single General Purpose P No No -30AO3422Full Production SOT23-3Single General Purpose N No No 55AO3423Full Production SOT23-3Single General Purpose P Yes No -20AO3424Full Production SOT23-3Single General Purpose N No No 30AO3434Full Production SOT23-3Single Battery ProtectionN Yes No 30AO3435New SOT23-3Single SMPS P No No -20AO3438New SOT23-3Single Load Switch N No No 20AO3460NewSOT23-3Single Load Switch N Yes No 60AO3700Full Production SOT23-5Single General Purpose N Yes No 30AO3701Full Production SOT23-5Single General Purpose P Yes No -20AO3702NewSOT23-5Single General Purpose N No Yes 0.5A 20AO3703Full Production SOT23-5Single General PurposeP No Yes 0.5A -20AO3705NewSOT23-5Single SMPSP No Yes 1A-20AO4403Full Production SO-8Single General Purpose P No No -30AO4404BNewSO-8SingleGeneral PurposeNNoNo30ConfigurationPopular Application Type ESD Diode Part Number StatusReplacementPart Package Schottky Diode Schottky TypeV DS (V)* indicate Qg at 10VFor all bottom exposed packages, the Id and Pd are calculated at 100°C, otherwise are calculated at 70°C.。

SymbolTyp Max 24405475R θJL 2130°C/W Maximum Junction-to-Ambient A Steady-State °C/W Maximum Junction-to-Lead CSteady-State°C/WThermal Characteristics ParameterUnits Maximum Junction-to-Ambient A t ≤ 10s R θJA AO4411AO4411SymbolMin TypMaxUnits BV DSS -30V -1T J =55°C-5I GSS ±100nA V GS(th)-1.2-2-2.4V I D(ON)-40A 24.532T J =125°C334155m Ωg FS 14.5S V SD -0.76-1V I S-4.2A C iss 9201120pF C oss 190pF C rss 122pF R g3.65ΩQ g (10V)18.423nC Q g (4.5V)9.311.5nC Q gs 2.7nC Q gd 4.9nC t D(on)7.1ns t r 3.4ns t D(off)18.9ns t f 8.4ns t rr 21.527ns Q rr12.5nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Body Diode Reverse Recovery Time Body Diode Reverse Recovery ChargeI F =-8A, dI/dt=100A/µsDrain-Source Breakdown Voltage On state drain currentI D =-250µA, V GS =0V V GS =-10V, V DS =-5V V GS =-10V, I D =-8AReverse Transfer Capacitance I F =-8A, dI/dt=100A/µs Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditions I DSS µA Gate Threshold Voltage V DS =V GS I D =-250µA V DS =-24V, V GS =0VV DS =0V, V GS =±20V Zero Gate Voltage Drain Current Gate-Body leakage current R DS(ON)Static Drain-Source On-ResistanceForward TransconductanceDiode Forward Voltagem ΩV GS =-4.5V, I D =-5AI S =-1A,V GS =0V V DS =-5V, I D =-8ATurn-On Rise Time Turn-Off DelayTime V GS =-10V, V DS =-15V, R L =1.8Ω, R GEN =3ΩGate resistanceV GS =0V, V DS =0V, f=1MHzTurn-Off Fall TimeSWITCHING PARAMETERSTotal Gate Charge (4.5V)Gate Source Charge Maximum Body-Diode Continuous CurrentInput Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS V GS =0V, V DS =-15V, f=1MHz Gate Drain Charge Total Gate Charge (10V)V GS =-10V, V DS =-15V, I D =-8AA: The value of R θJA is measured with the device mounted on 1in 2FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev 4: Sept 2005AO4411AO4411。