AO4438
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VGS (Volts)
10
VDS=30V ID=8.2A 8
6
4
2
0
0
10
20
30
40
50
Qg (nC) Figure 7: Gate-Charge Characteristics
Capacitance (pF)
3500
3000
2500
Ciss
2000
1500 1000
500
Coss
Crss
0
0
5
10
25°C
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4438
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Power (W)
40 TJ(Max)=150°C TA=25°C
30
20
10
0
0.001 0.01 0.1
1
10 100 1000
Pulse Width (s)
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz
100
1000
Alpha & Omega Semiconductor, Ltd.
Product Summary
VDS (V) = 60V ID = 8.2A (VGS = 10V) RDS(ON) < 22mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V)
100% UIS Tested 100% Rg Tested
SOIC-8
Top View
Bottom View
AO4438
60V N-Channel MOSFET
General Description
The AO4438 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
53
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
2
ID(ON)
On state drain current
VGS=10V, VDS=5V
40
VGS=10V, ID=8.2A
SWITCHING PARAMETERS
Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr
Total Gate Charge
Total Gate Charge Gate Source Charge
VGS=10V, VDS=30V, ID=8.2A
Gate Voltage
Normalized On-Resistance
2.2
2
VGS=10V
1.8
ID=8.2A
1.6
1.4
VGS=4.5V
ID=7.6A
1.2
1
0.8 0
25 50 75 100 125 150 175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
Alpha & Omega Semiconductor, Ltd.
AO4438
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
ID (A)
30 10V
20
4V
4.5V 6V
10
VGS=3.5V
0
0
1
2
3
4
5
VDS (Volts) Fig 1: On-Region Characteristics
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W
1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RDS(ON) (mΩ)
50
ID=8.2A 40
125°C
30
20
25°C
10
2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
IS (A)
1.0E+01
1.0E+00 1.0E-01
125°C
1.0E-02 1.0E-03
ZθJA Normalized Transient Thermal Resistance
0.1
0.01 0.00001
Single Pulse
PD Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
IDSS
Zero Gate Voltage Drain Current
VDS=60V, VGS=0V
TJ=55°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
Power Dissipation
TA=25°C TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum 60 ±20 8.2 6.6 40 3.1 2
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
ID (Amps)
100.0
10.0
RDS(ON) limited
1.0
TJ(Max)=150°C TA=25°C
100µs 10µs 1ms
10ms 1s
0.1s 10s
DC
0.1
0.1
ID(A)
30
25
VDS=5V
125°C
20ห้องสมุดไป่ตู้
15
10
25°C 5
0
1.5
2
2.5
3
3.5
4
VGS(Volts) Figure 2: Transfer Characteristics
RDS(ON) (mΩ)
22
VGS=4.5V 20
18 VGS=10V
16
14
0
5
10
15
20
ID (A) Figure 3: On-Resistance vs. Drain Current and
-55 to 150
Thermal Characteristics
