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MBR845中文资料

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MBR830 - MBR860
8.0A SCHOTTKY BARRIER RECTIFIER
Features
L
M
A
N
P
D
E
K
C B
J
G
R
Pin 11
2
Pin 2
Case
TO-220AC
Dim
Min Max A 14.2215.88B 9.6510.67C 2.54 3.43D 5.84 6.86E ¾ 6.35G 12.7014.73J
0.51 1.14K 3.53Æ 4.09ÆL 3.56 4.83M 1.14 1.40N 0.300.64P 2.03 2.92R
4.83
5.33
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T A = 25°C unless otherwise specified
·Schottky Barrier Chip
·Guard Ring Die Construction for Transient Protection
·Low Power Loss, High Efficiency ·High Surge Capability
·High Current Capability and Low Forward Voltage Drop
·For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application
·
Plastic Material: UL Flammability Classification Rating 94V-0
Mechanical Data
·Case: Molded Plastic
·Terminals: Plated Leads Solderable per MIL-STD-202, Method 208·Polarity: See Diagram
·Weight: 2.24 grams (approx.)·Mounting Position: Any ·
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.
Characteristic
Symbol MBR
830MBR 835MBR 840MBR 845MBR 850MBR 860Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 303540455060V RMS Reverse Voltage
V R(RMS)
21
24.5
28
31.5
35
42
V Average Rectified Output Current (Note 1)@ T C = 125°C I O 8.0A Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
I FSM 150A Repetitive Peak Reverse Surge Current @ t £2.0m s
I RRM 1.0
A
Forward Voltage Drop
@ I F = 8.0A, T C = 125°C @ I F = 8.0A, T C = 25°C @ I F = 16A, T C = 25°C
V FM 0.570.700.84
0.700.800.95
V Peak Reverse Current
@ T C = 25°C at Rated DC Blocking Voltage @ T C = 125°C
I RM 0.115mA Typical Junction Capacitance (Note 2)
C j 250pF Typical Thermal Resistance Junction to Case (Note 1)R q JC 3.0K/W Voltage Rate of Change (Rated V R )dV/dt 1000
V/m s Operating and Storage Temperature Range
T j,T STG
-65 to +150
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
I ,I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )
F V ,INSTANTANEOUS FORWARD VOLTAGE (V)
Fig.2Typical Forward Characteristics
F 0.1
1.0
10
100
0.4
0.8
1.2 1.6
50100
150
200250300110
100
I ,P E A K F O R W A R D S U R G E C
U R R E N T (A )
F S M NUMBER OF CYCLES AT 60Hz
Fig.3Max Non-Repetitive Surge Current
10
100
1000
0.1 1.010100
C ,J U N C T I O N C A P A
C I T A N C E (p F )
j V ,REVERSE VOLTAGE (V)Fig.4Typical Junction Capacitance
R 0
2
4
6
8
100
50
100
150
I ,A V E R A G E F W D C U R R E
N T (A )
(A V )T ,CASE TEMPERATURE (C)Fig.1Forward Current Derating Curve
C °。

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PC845中文资料

PC845中文资料


s Electro-optical Characteristics
Parameter Forward voltage Peak forward voltage Reverse current Terminal capacitance Collector dark current Current transfer ratio Collector-emitter saturation voltage Isolation resistance Floating capacitance Cut-off frequency Rise time Response time Fall time Symbol VF V FM IR Ct I CEO CTR V CE(sat) R ISO Cf fc tr tf Conditions I F = 20mA I FM = 0.5A V R = 4V V = 0, f = 1kHz V CE = 10V, I F = 0 I F = 1mA, V CE = 2V I F = 20mA, I C = 5mA DC500V, 40 to 60% RH V = 0, f = 1MHz V CE = 2V, I C = 2mA, R L = 100 Ω V CE MIN. 600 5 x 10 10 1 = 2V, I C = 10mA, R L = 100 Ω TYP. 1.2 30 0.8 10 11 0.6 6 60 53
2 000 Current transfer ratio CTR ( % ) 1 800 1 600 1 400 1 200 1 000 800 600 400 200 0 0.1 V CE = 2V T a = 25˚C
Fig. 6 Collector Current vs. Collector-emitter Voltage
CiTRANS R845系列设备简介_V2.0

CiTRANS R845系列设备简介_V2.0

注：工程上请特别关注设备单盘温度 和风扇运转情况，并根据实际情况适 用合适配置。
15
15
设备硬件
CiTRANS R845 防尘网位于风扇 单元左侧，由托架和低密度防尘网 构成。该防尘网采用自锁方式进行 固定，便于插拔 。
16
16
单盘简介
CiTRANS R845、CiTRANS R835E、CiTRANS R830E三款设备共用包 括路由控制盘、交叉时钟盘、各类接口盘、电源盘在内的组件
22
22
设备硬件
CiTRANS R830E业务单元配置说明表
单盘名称 10GE光接口盘（2路） 10GE光接口盘（1路） GE/FE混合接口盘（8路） FE光接口盘（8路） FE电接口盘（8路） STM1光接口盘（4路） 2M电接口盘（32路） 单盘缩号 XSK2 XSK3 MSP1 ESK3 ESK4 S1K3 E1K4 可配置槽位 SLOT 1、3、 4 备注 提供2路10GE光口 提供1路10GE光口 每个端口均可单独配置为GE光口、FE光口或FE电
CiTRANS R845/R835E/R830E 设备简介
烽火通信网络产出线 2013年2月28日
1
1
目录： 设备概述
系统架构 设备硬件 单盘简介
注意事项
端口MAC地址生成开关 RCUP1升级 SCUP1升级 温度和风扇
典型工程
大兴安岭 攀枝花
2 2
设备概述
3
3
设备概述
CiTRANS R845设备是烽火公司推出的高端IP/MPLS路由器产品，主要定位 于移动回传网的接入和汇聚层、多业务城域网的接入和汇聚层。 CiTRANS R845具备高速接口的线速转发能力、完善的QoS机制、运营级的 可靠性、丰富的业务处理能力、方便灵活的业务配置和管理和分组化的时间同步 技术，满足数据业务以及IP RAN业务对简介
MBRB745中文资料

MBRB745中文资料

MBRB735 THRU MBRB760SCHOTTKY RECTIFIERReverse Voltage - 35 to 60 Volts Forward Current -7.5 AmperesFEATURESRatings at 25°C ambient temperature unless otherwise specified.SYMBOLS MBRB735MBRB745MBRB750MBRB760UNITS Maximum repetitive peak reverse voltage V RRM35455060Volts Maximum working peak reverse voltage V RWM35455060Volts Maximum DC blocking voltage V DC35455060Volts Maximum average forward rectified current (SEE FIG 1)I(AV)7.5Amps Peak repetitive forward current (square wave, 20 KH Z)at T C=105°CI FRM15.0Amps Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)I FSM150.0Amps Peak repetitive reverse surge current (NOTE 1)I RRM 1.00.5Amps Maximum instantaneous I F=7.5A, T C=25°C-0.75forward voltage at I F=7.5A, T C=125°CV F 0.570.65Volts(NOTE2)I F=15A, T C=25°C0.84-I F=15A, T C=125°C0.72-Maximum instantaneous reverse current atrated DC blocking voltage T C=25°C I R0.10.5mA (NOTE 1)T C=125°C15.050.0Voltage rate of change (rated V R)dv/dt10,0001,000V/µs Maximum thermal resistance,(NOTE 3)RΘJC 3.0°C/W Operating junction temperature range T J-65 to +150°C Storage temperature range T STG-65 to +175°C NOTES:(1) 2.0µs, pulse width, f=1.0 KH Z(2) Pulse test: 300µs pulse width, 1% duty cycle(3) Thermal resistance from junction to case4/98TO-263AB11010025507510012515017500.10.20.30.40.50.60.70.80.9 1.01.1 1.20.010.1110500.1110100401001,0004,0000.010.11101000.11101000501001500246810204060801000.0010.010.111050FIG. 1 - FORWARD CURRENT DERATING CURVECASE TEMPERATURE, °CA V E R A G E F O R W A R D C U R R E N T ,A M P E R E SFIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARDSURGE CURRENTNUMBER OF CYCLES AT 60 H ZP E A K F O R W A R D S U R G E C U R R E N T ,A M P E R E SFIG. 3 - TYPICAL INSTANTANEOUS FORWARDCHARACTERISTICSFIG. 4 - TYPICAL REVERSE CHARACTERISTICSI N S T A N T A N E O U S F O R W A R D C U R R E N T , A M P E R E SI N S T A N T A N E O U S R E V E R S E C U R R E N T , M I L L I A M P E R E SINSTANTANEOUS FORWARD VOLTAGE,VOLTSPERCENT OF RATED PEAK REVERSEVOLTAGE, %FIG. 5 - TYPICAL JUNCTION CAPACITANCEJ U N C T I O N C A P A C I T A N C E , p FREVERSE VOLTAGE, VOLTST J =T J max.8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)T J =75°CT J =25°CT J =25°CT J =125°CPULSE WIDTH = 300µsT J =25°C f=1.0 MHz Vsig=50mVp-pRESISTIVE OR INDUCTIVE LOADT J =125°CFIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCEt, PULSE DURATION, sec.T R A N S I E N T T H E R M A L I M P E D A N C E , °C /WMBR735 - MBR745MBR750 & MBR760MBRB735 - MBRB745MBRB750 & MBBR760MBRB735 - MBRB745MBRB750 & MBBR760MBRB735 - MBRB745MBRB750 & MBBR760RATINGS AND CHARACTERISTIC CURVES MBRB735 THRU MBRB760。

MBR3045PT中文资料

MBR3045PT中文资料

MBR3035PT - MBR3060PTMBR3035PT - MBR3060PT, Rev. A©1999 Fairchild Semiconductor CorporationTO-3P/TO-247ADMBR3035PT - MBR3060PT, Rev. ATRADEMARKSACEx™CoolFET™CROSSVOLT™E 2CMOS TM FACT™FACT Quiet Series™FAST ®FASTr™GTO™HiSeC™The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.As used herein:ISOPLANAR™MICROWIRE™POP™PowerTrench™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8TinyLogic™1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a lifesupport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status Definition Advance InformationPreliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.。