CNY17Document Number 83606Rev. 1.5, 26-Oct-04Vishay Semiconductors1Optocoupler, Phototransistor Output, With Base ConnectionFeatures•Isolation Test Voltage 5300 V RMS •Long Term Stability•Industry Standard Dual-in-Line Package •Lead-free component•and WEEE 2002/96/ECAgency Approvals•Underwriters Lab File #E52744 System Code H or J•DIN EN 60747-5-2 (VDE0884)DIN EN 60747-5-5 pending •BSI IEC60950 IEC60065 •FIMKODescriptionThe CNY17 is an optically coupled pair consisting of a Gallium Arsenide infrared emitting diode optically coupled to a silicon NPN phototransistor.Signal information, including a DC level, can be trans-mitted by the device while maintaining a high degree of electrical isolation between input and output.The CNY17 can be used to replace relays and trans-formers in many digital interface applications, as well as analog applications such as CRT modulation.Order InformationFor additional information on the available options refer to Option Information.PartRemarksCNY17-1CTR 40 - 80 %, DIP-6CNY17-2CTR 63 - 125 %, DIP-6CNY17-3CTR 100 - 200 %, DIP-6CNY17-4CTR 160 - 320 %, DIP-6CNY17-1X006CTR 40 - 80 %, DIP-6 400 mil (option 6)CNY17-1X007CTR 40 - 80 %, SMD-6 (option 7)CNY17-1X009CTR 40 - 80 %, SMD-6 (option 9)CNY17-2X006CTR 63 - 125 %, DIP-6 400 mil (option 6)CNY17-2X007CTR 63 - 125 %, SMD-6 (option 7)CNY17-2X009CTR 63 - 125 %, SMD-6 (option 9)CNY17-3X006CTR 100 - 200 %, DIP-6 400 mil (option 6)CNY17-3X007CTR 100 - 200 %, SMD-6 (option 7)CNY17-3X009CTR 100 - 200 %, SMD-6 (option 9)CNY17-4X006CTR 160 - 320 %, DIP-6 400 mil (option 6)CNY17-4X007CTR 160 - 320 %, SMD-6 (option 7)CNY17-4X009CTR 160 - 320 %, SMD-6 (option 9) 2Document Number 83606Rev. 1.5, 26-Oct-04CNY17Vishay Semiconductors Absolute Maximum RatingsT amb = 25°C, unless otherwise specifiedStresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.InputOutputCouplerParameterTest conditionSymbol Value Unit Reverse voltage V R 6.0V Forward current I F 60mA Surge current t ≤ 10 µsI FSM 2.5A Power dissipationP diss100mWParameterTest conditionSymbol Value Unit Collector-emitter breakdown voltageBV CEO 70V Emitter-base breakdown voltageBV EBO 7.0V Collector currentI C 50mA t < 1.0 msI C 100mA Power dissipationP diss150mWParameterTest conditionSymbol Value Unit Isolation test voltage (between emitter & detector referred to climate DIN 50014, part 2, Nov. 74)t = 1 secV ISO5300V RMSCreepage distance ≥ 7.0mm Clearance distance ≥ 7.0mm Isolation thickness between emitter and detector≥ 0.4mmComparative tracking index per DIN IEC 112/VDE0303, part 1175Isolation resistance V IO = 500 V, T amb = 25°C R IO ≥ 1012ΩV IO = 500 V, T amb = 100°CR IO ≥1 011ΩStorage temperature T stg - 55 to + 150°C Operating temperature T amb - 55 to + 100°C Soldering temperaturemax. 10 s, dip soldering: distance to seating plane ≥ 1.5 mmT sld260°CCNY17Document Number 83606Rev. 1.5, 26-Oct-04Vishay Semiconductors3Electrical CharacteristicsT amb = 25°C, unless otherwise specifiedMinimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.InputOutputCouplerCurrent Transfer RatioCurrent Transfer Ratio and collector-emitter leakage current by dash number (T amb °C)ParameterT est conditionSymbol MinT yp.Max Unit Forward voltage I F = 60 mA V F 1.251.65V Breakdown voltage I R = 10 mA V BR 6.0V Reserve current V R = 6.0 VI R 0.0110µA Capacitance V R = 0 V , f = 1.0 MHzC O 25pF Thermal resistanceR th750K/WParameterT est conditionSymbol MinT yp.MaxUnit Collector-emitter capacitance V CE = 5.0 V, f = 1.0 MHz C CE 5.2pF Collector - base capacitance V CB = 5.0 V, f = 1.0 MHz C CB 6.5pF Emitter - base capacitance V EB = 5.0 V, f = 1.0 MHzC EB 7.5pF Thermal resistanceR th500K/WParameterT est conditionPartSymbol MinT yp.Max Unit Collector-emitter saturation voltageV F = 10 mA, I C = 2.5 mAV CEsat 0.250.4V Coupling capacitance C C 0.6pF Collector-emitter leakage currentV CE = 10 V, I CEOCNY17-1I CEO 2.050nA CNY17-2I CEO 2.050nA CNY17-3I CEO 5.0100nA CNY17-4I CEO5.0100nAParameterT est conditionPart Symbol Min T yp.Max Unit I C /I FI F = 10 mA, V CE = 5.0 VCNY17-1CTR 4080%CNY17-2CTR 63125%CNY17-3CTR 100200%CNY17-4CTR 160320%I F = 1.0 mA, V CE = 5.0 VCNY17-1CTR 1330%CNY17-2CTR 2245%CNY17-3CTR 3470%CNY17-4CTR5690% 4Document Number 83606Rev. 1.5, 26-Oct-04CNY17Vishay Semiconductors Switching CharacteristicsLinear operation (without saturation)Switching operation (with saturation)Typical Characteristics (Tamb = 25 °C unless otherwise specified)Parameter Test conditionSymbol MinTyp.MaxUnit Turn-on time I F = 10 mA, V CC = 5.0 V , R L = 75 W t on 3.0µs Rise time I F = 10 mA, V CC = 5.0 V , R L = 75 W t r 2.0µs Turn-off time I F = 10 mA, V CC = 5.0 V , R L = 75 W t off 2.3µs Fall time I F = 10 mA, V CC = 5.0 V , R L = 75 W t f 2.0µs Cut-off frequencyI F = 10 mA, VCC = 5.0 V ,f CO 250kHz ParameterTest conditionPart Symbol MinTyp.Max Unit Turn-on timeI F = 20 mA CNY17-1t on 3.0µs I F = 10 mA CNY17-2t on 4.2µs CNY17-3ton 4.2µs I F = 5.0 mACNY17-4t on 6.0µs Rise timeI F = 20 mA CNY17-1t f 2.0µs I F = 10 mA CNY17-2t f 3.0µs CNY17-3t f 3.0µs I F = 5.0 mACNY17-4t f 4.6µs Turn-off timeI F = 20 mA CNY17-1t off 18µs I F = 10 mA CNY17-2t off 23µs CNY17-3t off 23µs I F = 5.0 mACNY17-4t off 25µs Fall timeI F = 20 mA CNY17-1t f 11µs I F = 10 mA CNY17-2t f 14µs CNY17-3t f 14µs I F = 5.0 mACNY17-4t f 15µsFigure 1. Linear Operation ( without Saturation)icny17_01R = 75ΩV CC = 5VI Figure 2. Switching Operation (with Saturation)V CC = 5Vicny17_02CNY17Document Number 83606Rev. 1.5, 26-Oct-04Vishay Semiconductors5Figure 3. Current Transfer Ratio vs. Diode Current Figure 4. Current Transfer Ratio vs. Diode Current Figure 5. Current Transfer Ratio vs. Diode Current 234icny17_03(T A =–25°C,V CE =5.0V)I C /I F =f (I F )1123icny17_04(T A =0 °C,V CE =5.0V )I C /I F =f (I F )1234icny17_05(T A =25°C,V CE =5.0V)I C /I F =f (I F )Figure 6. Current Transfer Ratio vs. Diode CurrentFigure 7. Current Transfer Ratio vs. Diode CurrentFigure 8. Current Transfer Ratio (CTR) vs. Temperature1234icny17_06(T A =50°C,V CE =5.0V)I C /I F =f (I F )1234icny17_07(T A =75°C,V CE =5.0V)4321icny17_08(I F =10mA,V CE =5.0V)I C /I F =f (T)T A 6Document Number 83606Rev. 1.5, 26-Oct-04CNY17Vishay SemiconductorsFigure 9. Transistor Characteristics Figure 10. Output CharacteristicsFigure 11. Forward Voltageicny17_09I C =f (V CE )(I F =0)icny17_10I C =f (V CE )icny17_11V F =f (I F )Figure 12. Collector-Emitter off-state CurrentFigure 13. Saturation Voltage vs Collector Current and ModulationDepth CNY17-1Figure 14. Saturation Voltage vs. Collector Current and ModulationDepth CNY17-2icny17_12I CEO =f (V,T)(I F =0)icny17_13V CEsat =f (I C )icny17_14V CEsat =f (I C )CNY17Document Number 83606Rev. 1.5, 26-Oct-04Vishay Semiconductors7Figure 15. Saturation Voltage vs. Collector Current and ModulationDepth CNY17-3Figure 16. Saturation Voltage vs. Collector Current and ModulationDepth CNY17-4Figure 17. Permissible Power Dissipation for Transistor and Diodeicny17_15V CEsat =f (I C )icny17_16V CEsat =f (I C )Vicny17_18P =f (T ) 8Document Number 83606Rev. 1.5, 26-Oct-04CNY17Vishay SemiconductorsPackage Dimensions in Inches (mm)CNY17Document Number 83606Rev. 1.5, 26-Oct-04Vishay Semiconductors9Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. 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