BSM50模块
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Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM50GP120
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
2
VRRM IFRMSM TC = 80°C tP = 10 ms, T vj = tP = 10 ms, T vj = 25°C 25°C Id IFSM I2 t
1600 40 50 500 400 1250 800
V A A A A A2s A2s
tP = 10 ms, T vj = 150°C tP = 10 ms, T vj = 150°C
Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral I2t - value Tc = 80 °C tP = 1 ms VR = 0V, tp = 10ms, Tvj = 125°C IF IFRM
Modul Isolation/ Module Isolation Isolations-Prüfspannung insulation test voltage VISOL 2,5 kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier Durchlaßspannung forward voltage Schleusenspannung threshold voltage Ersatzwiderstand slope resistance Sperrstrom reverse current Tvj = 150°C, Tvj = 150°C Tvj = 150°C Tvj = 150°C, V R = 1600 V I F = 50 A VF V(TO) rT IR RAA'+CC'
Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Durchlaßstrom Grenzeffektivwert RMS forward current per chip Dauergleichstrom DC forward current Stoßstrom Grenzwert surge forward current Grenzlastintegral I t - value
VCE = 0V, VGE =20V, Tvj =25°C IC = INenn, V CC =
VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, V CC = VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, V CC = VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, V CC = VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, V CC = LS = IC = INenn, V CC = LS = tP £ 10µs, VGE £ 15V, Tvj£125°C, RG = VCC = dI/dt = VGE = ±15V, Tvj = 125°C, R G = VGE = ±15V, Tvj = 125°C, R G =
typ.
2,2 2,5 5,5 3,3 3,0 4,0 -
max.
2,55 6,5 500 300 V V V nF µA mA nA
f = 1MHz, Tvj = 25°C VCE = 25 V, VGE = 0 V VGE = 0V, VGE = 0V, Tvj = 25°C, V CE = Tvj =125°C, V CE =来自min.-typ.
1,05 3 4
max.
0,8 6,5 V V mW mA mW
Modul Leitungswiderstand, Anschlüsse-Chip TC = 25°C lead resistance, terminals-chip Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25°C, Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, Gate-Schwellenspannung gate threshold voltage Eingangskapazität input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data VCE = VGE, Tvj = 25°C,
BSM50GP120
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values min.
Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse-Chip TC = 25°C lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current Sperrverzögerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy LsCE RCC'+EE' -
date of publication:12.06.2003 revision: 6
1(11)
DB-PIM-10.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM50GP120
RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate
min.
IC = IC = IC = 50 A 50 A 2 mA VGE(TO) Cies 1200 V 1200 V IGES 600 V 15 Ohm 15 Ohm 600 V 15 Ohm 15 Ohm 600 V 15 Ohm 15 Ohm 600 V 15 Ohm 15 Ohm 600 V 15 Ohm 50 nH 600 V 15 Ohm 50 nH 15 Ohm 720 V 4000 A/µs ISC Eoff Eon tf td,off tr td,on ICES VCE sat 4,5 -
2 It
VCES Tc = 80 °C TC = 25 °C tP = 1 ms, TC = 25°C T C = 80 °C IC,nom. IC ICRM Ptot VGES
IGBT-Module IGBT-Modules
BSM50GP120
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
2
VRRM IFRMSM TC = 80°C tP = 10 ms, T vj = tP = 10 ms, T vj = 25°C 25°C Id IFSM I2 t
1600 40 50 500 400 1250 800
V A A A A A2s A2s
tP = 10 ms, T vj = 150°C tP = 10 ms, T vj = 150°C
Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral I2t - value Tc = 80 °C tP = 1 ms VR = 0V, tp = 10ms, Tvj = 125°C IF IFRM
Modul Isolation/ Module Isolation Isolations-Prüfspannung insulation test voltage VISOL 2,5 kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier Durchlaßspannung forward voltage Schleusenspannung threshold voltage Ersatzwiderstand slope resistance Sperrstrom reverse current Tvj = 150°C, Tvj = 150°C Tvj = 150°C Tvj = 150°C, V R = 1600 V I F = 50 A VF V(TO) rT IR RAA'+CC'
Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Durchlaßstrom Grenzeffektivwert RMS forward current per chip Dauergleichstrom DC forward current Stoßstrom Grenzwert surge forward current Grenzlastintegral I t - value
VCE = 0V, VGE =20V, Tvj =25°C IC = INenn, V CC =
VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, V CC = VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, V CC = VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, V CC = VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, V CC = LS = IC = INenn, V CC = LS = tP £ 10µs, VGE £ 15V, Tvj£125°C, RG = VCC = dI/dt = VGE = ±15V, Tvj = 125°C, R G = VGE = ±15V, Tvj = 125°C, R G =
typ.
2,2 2,5 5,5 3,3 3,0 4,0 -
max.
2,55 6,5 500 300 V V V nF µA mA nA
f = 1MHz, Tvj = 25°C VCE = 25 V, VGE = 0 V VGE = 0V, VGE = 0V, Tvj = 25°C, V CE = Tvj =125°C, V CE =来自min.-typ.
1,05 3 4
max.
0,8 6,5 V V mW mA mW
Modul Leitungswiderstand, Anschlüsse-Chip TC = 25°C lead resistance, terminals-chip Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25°C, Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, Gate-Schwellenspannung gate threshold voltage Eingangskapazität input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data VCE = VGE, Tvj = 25°C,
BSM50GP120
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values min.
Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse-Chip TC = 25°C lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current Sperrverzögerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy LsCE RCC'+EE' -
date of publication:12.06.2003 revision: 6
1(11)
DB-PIM-10.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM50GP120
RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate
min.
IC = IC = IC = 50 A 50 A 2 mA VGE(TO) Cies 1200 V 1200 V IGES 600 V 15 Ohm 15 Ohm 600 V 15 Ohm 15 Ohm 600 V 15 Ohm 15 Ohm 600 V 15 Ohm 15 Ohm 600 V 15 Ohm 50 nH 600 V 15 Ohm 50 nH 15 Ohm 720 V 4000 A/µs ISC Eoff Eon tf td,off tr td,on ICES VCE sat 4,5 -
2 It
VCES Tc = 80 °C TC = 25 °C tP = 1 ms, TC = 25°C T C = 80 °C IC,nom. IC ICRM Ptot VGES
