ZVN4306AV中文资料
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Single Pulse
0.001
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
25 20 15 10 5 0 0 25 50
Note: Unclamped Inductive Test L=43mH, Vcc=12V
Transconductance v drain current
VGS-Gate Source Voltage (Volts)
500 400 300 200 100 0 0 10 20 30 40 50 Ciss
16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 ID=3A
1.0
Thermal Resistance (°C/W)
150 t
D.C.
D=t/t2
0.75
100
Am em tt en bi
t2
D=0.6
0.50
re tu ra pe
50
D=0.2 D=0.1 D=0.05
0.25
0 -40 -20 0 20 40 60 80 100 120 140 160 0.0001
2.6
Normalised RDS(on) and VGS(th)
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6
ain Dr Re ce ur So R ce an ist s
n) (o DS
gfs-Transconductance (S)
VGS=10V ID=3A
5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 VDS=10V
1.0 0.8 0.6 0.4 0.2
Note: Unclamped Inductive Test L=43mH, Vcc=12V
75
100
125
150
0
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
ZVN4306AV
TYPICAL CHARACTERISTICS
12 11 7V
RDS(on)-Drain Source On Resistance (Ω)
VGS= 20V 12V 10V 9V 8V
VGS=3V 10
3.5V
5V 6V
ID - Drain Current (Amps)
10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9
VGS=VDS ID=1mA
Gate Threshold Voltage VGS(TH) -50 -25 0 25 50 75 100 125 150 175 200 225
Tj-Junction Temperature (°C)
ID(on)- Drain Current (Amps)
Normalised RDS(on) and VGS(th) v Temperature
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) SYMBOL MIN. BV DSS 60 TYP. MAX. UNIT CONDITIONS. V I D =1mA, V GS =0V
Maximum Repetitive Avalanche Energy v Junction Temperature.
Maximum Repetitive Avalanche Current v Junction Temperature
Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Fax: (44)161-627 5467 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide ©Zetex plc 1997 Internet:
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum
ZVN4306AV
6V
1.0
5V
8V 10V
4V 3.5V 3V 10
0.1 0.1
1
10
100
VDS - Drain Source Voltage (Volts)
ID-Drain Current (Amps)
Saturation Characteristics
On-resistance v drain ent
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 1 – FEBRUARY 95 FEATURES * 60 Volt VDS * RDS(on)= 0.33Ω * Repetitive Avalanche Rating APPLICATIONS * Solenoids / relay drivers for automotive * Stepper Motor Drivers * DC-DC convertors
30
pF
t d(on)
8
ns V DD ≈25V, V GEN =10V, I D =3A
tr t d(off)
25 30
ns ns
tf
16
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ZVN4306AV
THERMAL CHARACTERISTICS
PARAMETER Thermal Resistance:Junction to Ambient Junction to Case SYMBOL Rth(j-amb) Rth(j-case) MAX. 150 50 UNIT °C/W °C/W
VDD= 20V 40V 60V
C-Capacitance (pF)
Coss Crss 60 70 80
9
10 11 12
VDS-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
ZVN4306AV
D G
S
E-Line TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb =25°C Practical Continuous Drain Current at T amb =25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb =25°C Practical Power Dissipation at T amb =25°C* Avalanche Current-Repetitive Avalanche Energy-Repetitive Operating and Storage Temperature Range SYMBOL V DS ID I DP I DM V GS P tot P totp I AR E AR T j :T stg VALUE 60 1.1 1.3 15 ± 20 850 1.13 1 25 -55 to +150 UNIT V A A A V mW W A mJ °C