MRF5S21045NBR1;MRF5S21045NR1;中文规格书,Datasheet资料
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RF Power Field Effect TransistorsN--Channel Enhancement--Mode Lateral MOSFETsDesigned for W--CDMA base station applications with frequencies from 2110to 2170MHz.Suitable for TDMA,CDMA and multicarrier amplifier applications.T o be used in Class AB for PCN--PCS/cellular radio and WLL applications.•Typical 2--Carrier W--CDMA Performance:V DD =28Volts,I DQ =500mA,P out =10Watts Avg.,f =2112.5MHz,Channel Bandwidth =3.84MHz,PAR =8.5dB @0.01%Probability on CCDF.Power Gain —14.5dB Drain Efficiency —25.5%IM3@10MHz Offset —--37dBc in 3.84MHz Channel Bandwidth ACPR @5MHz Offset —--39dBc in 3.84MHz Channel Bandwidth •Capable of Handling 5:1VSWR,@28Vdc,2140MHz,45Watts CW Output Power Features•Characterized with Series Equivalent Large--Signal Impedance Parameters •Internally Matched for Ease of Use•Qualified Up to a Maximum of 32V DD Operation •Integrated ESD Protection•200°C Capable Plastic Package•N Suffix Indicates Lead--Free Terminations.RoHS Compliant.•In Tape and Reel.R1Suffix =500Units per 44mm,13inch Reel.Table 1.Maximum RatingsRatingSymbol Value Unit Drain--Source Voltage V DSS --0.5,+68Vdc Gate--Source VoltageV GS --0.5,+15Vdc Total Device Dissipation @T C =25°C Derate above 25°C P D 1300.74W W/°C Storage Temperature Range T stg --65to +150°C Operating Junction TemperatureT J200°CTable 2.Thermal CharacteristicsCharacteristicSymbol Value (1,2)Unit Thermal Resistance,Junction to Case Case Temperature 80°C,45W CW Case Temperature 79°C,10W CWR θJC1.351.48°C/W1.MTTF calculator available at /rf.Select Software &Tools/Development Tools/Calculators to access MTTF calculators by product.2.Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers.Go to /rf.Select Documentation/Application Notes --AN1955.L I F E T I M E B U YL A S T O R D E R 1J U L 2Document Number:MRF5S21045NRev.4.1,12/2009Freescale Semiconductor Technical DataMRF5S21045NR1MRF5S21045NBR1Table 3.ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JESD22--A114)1C (Minimum)Machine Model (per EIA/JESD22--A115)A (Minimum)Charge Device Model (per JESD22--C101)IV (Minimum)Table 4.Moisture Sensitivity LevelTest MethodologyRating Package Peak TemperatureUnit Per JESD 22--A113,IPC/JEDEC J--STD--0203260°CTable 5.Electrical Characteristics (T A =25°C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOff CharacteristicsZero Gate Voltage Drain Leakage Current (V DS =68Vdc,V GS =0Vdc)I DSS ——10μAdc Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =0Vdc)I DSS ——1μAdc Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc)I GSS——1μAdcOn CharacteristicsGate Threshold Voltage(V DS =10Vdc,I D =120μAdc)V GS(th)2— 3.5Vdc Gate Quiescent Voltage(V DS =28Vdc,I D =500mAdc)V GS(Q)2 3.85Vdc Drain--Source On--Voltage(V GS =10Vdc,I D =1.2Adc)V DS(on)0.2—0.35Vdc Forward Transconductance (V DS =10Vdc,I D =1.2Adc)g fs—3.2—SDynamic Characteristics (1)Reverse Transfer Capacitance(V DS =28Vdc ±30mV(rms)ac @1MHz,V GS =0Vdc)C rss—0.9—pFFunctional Tests (In Freescale Test Fixture,50ohm system)V DD =28Vdc,I DQ =500mA,P out =10W Avg.,f1=2112.5MHz,f2=2122.5MHz,2--carrier W--CDMA,3.84MHz Channel Bandwidth Carriers.ACPR measured in 3.84MHz Channel Bandwidth @±5MHz Offset.IM3measured in 3.84MHz Bandwidth @±10MHz Offset.PAR =8.5dB @0.01%Probability on CCDF.Power GainG ps 13.514.516.5dB Drain EfficiencyηD 2425.5—%Intermodulation Distortion IM3—--37--35dBc Adjacent Channel Power Ratio ACPR —--39--37dBc Input Return LossIRL—--12--9dB1.Part is internally matched both on input and output.L I F E T I M E B U YL A S T O R D E R 1J U L 11L A S T S H I P 30J U N 12MRF5S21045NR1MRF5S21045NBR1Figure 1.MRF5S21045NR1(NBR1)Test Circuit SchematicZ70.500″x 1.000″Microstrip Z8,Z130.270″x 0.080″Microstrip Z100.789″x 0.080″Microstrip Z110.527″x 0.080″Microstrip Z120.179″x 0.080″MicrostripPCBTaconic TLX8--0300,0.030″,εr =2.55Z1,Z90.250″x 0.080″Microstrip Z20.987″x 0.080″Microstrip Z30.157″x 0.080″Microstrip Z40.375″x 0.080″Microstrip Z50.480″x 1.000″Microstrip Z60.510″x 0.080″MicrostripV SUPPLYRF RF INPUTTable 6.MRF5S21045NR1(NBR1)Test Circuit Component Designations and ValuesPartDescriptionPart NumberManufacturer C1220nF Chip Capacitor (1812)1812Y224KAT AVX C2,C3,C7,C12,C13 6.8pF 100B Chip Capacitors ATC100B6R8CT500XT ATC C4,C5,C14,C15 6.8μF Chip Capacitors (1812)C4532X5R1H685MT TDK C6220μF,63V Electrolytic Capacitor,Radial 2222--136--68221Vishay C8,C101pF 100B Chip Capacitors ATC100B1R0BT500XT ATC C9 1.5pF 100B Chip Capacitor ATC100B1R5BT500XT ATC C110.5pF 100B Chip Capacitor ATC100B0R5BT500XT ATC R1,R210k Ω,1/4W Chip Resistors CRCW12061002FKEA Vishay R310Ω,1/4W Chip ResistorCRCW120610R0FKEAVishayL I F E T I M E B U YL A S T O R D E R 1J U L 11L A S T S H I P 30J U N 12MRF5S21045NR1MRF5S21045NBR1Figure 2.MRF5S21045NR1(NBR1)Test Circuit Component LayoutL I F E T I M E B U YL A S T O R D E R 1J U L 11L A S T S H I P 30J U N 12MRF5S21045NR1MRF5S21045NBR1TYPICAL CHARACTERISTICSFigure 5.Two--Tone Power Gain versus Output Power Figure 6.Third Order Intermodulation Distortionversus Output Power10011171P out ,OUTPUT POWER (WATTS)PEP151312101P out ,OUTPUT POWER (WATTS)PEP 10100G p s ,P O W E R G A I N (d B )1614L I F E T I M E B U YL A S T O R D E R 1J U L 11L A S T S H I P 30J U N 12MRF5S21045NR1MRF5S21045NBR1TYPICAL CHARACTERISTICS--------I M D ,I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )040301020ηD ,D R A I N E F F I C I E N C Y (%),G p s ,P O W E R G A I N (d B )Figure 11.Power Gain versus Output PowerP out ,OUTPUT POWER (WATTS)CW8050203040706010L I F E T I M E B U YL A S T O R D E R 1J U L 11L A S T S H I P 30J U N 12MRF5S21045NR1MRF5S21045NBR1TYPICAL CHARACTERISTICS21010990T J ,JUNCTION TEMPERATURE (°C)Figure 12.MTTF Factor versus Junction TemperatureThis above graph displays calculated MTTF in hours x ampere 2drain current.Life tests at elevated temperatures have correlated to better than ±10%of the theoretical prediction for metal failure.Divide MTTF factor by I D 2for MTTF in a particular application.108107106110130160180200M T T F F A C T O R (H O U R S x A M P S 2)100120140150170190W--CDMA TEST SIGNAL100.00011000PEAK--TO--AVERAGE (dB)Figure DF W--CDMA 3GPP ,Test Model 1,64DPCH,67%Clipping,Single--Carrier Test Signal1010.10.010.0012468Figure 14.2-Carrier W-CDMA Spectrumf,FREQUENCY (MHz)P R O B A B I L I T Y (%)(d B )+20+300--10--40--50--60--70--80--2020515100--5--10--15--20--2525--30L I F E T I M E B U YL A S T O R D E R 1J U L 11L A S T S H I P 30J U N 12MRF5S21045NR1MRF5S21045NBR1Figure 15.Series Equivalent Source and Load Impedancef MHz Z sourceΩZ load Ω200021102140 4.78--j5.193.81--j3.694.04--j4.148.15--j5.917.07--j7.326.28--j7.71V DD =28Vdc,I DQ=500mA,P out =10W Avg.Z o =10ΩZ loadf =2000MHzf =2200MHzZ source217022003.57--j3.113.69--j3.395.61--j7.854.92--j7.85Z source =Test circuit impedance as measured fromgate to ground.Z load=Test circuit impedance as measured from drain to ground.ZsourceZloadOutput Matching Networkf =2000MHzf =2200MHz L I F E T I M E B U YL A S T O R D E R 1J U L 11L A S T S H I P 30J U N 12MRF5S21045NR1MRF5S21045NBR1PACKAGEDIMENSIONSMRF5S21045NR1MRF5S21045NBR1分销商库存信息:FREESCALEMRF5S21045NBR1MRF5S21045NR1。
