SUD45P03-09-GE3中文资料

Vishay SiliconixSUD45P03-09Document Number: 65595P-Channel 30 V (D-S) MOSFETFEATURES•Halogen-free According to IEC 61249-2-21Definition•TrenchFET ® Power MOSFET •100 % R g and UIS Tested•Compliant to RoHS Directive 2002/95/ECAPPLICATIONS•Power Switch•Load Switch in High Current Applications •DC/DC ConvertersPRODUCT SUMMARYV DS (V)R DS(on) (Ω)I D (A)Q g(Typ.)- 300.0087 at V GS = - 10 V - 45d 600.0150 at V GS = - 4.5 V- 32Notes:a. Duty cycle ≤ 1 %.b. See SOA curve for voltage derating.c. When Mounted on 1" square PCB (FR-4 material).d. Package limited. ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise notedParameterSymbol Limit Unit Drain-Source Voltage V DS - 30VGate-Source VoltageV GS± 20Continuous Drain Current (T J = 150 °C)T C = 25 °C I D - 45d AT C = 70 °C- 42.5Pulsed Drain Current I DM - 100Avalanche Current I AS- 35Single Avalanche Energy a L = 0.1 mH E AS 61mJ Maximum Power DissipationaT C = 25 °C P D 41.7b W T A = 25 °C c2.1Operating Junction and Storage T emperature RangeT J , T stg- 55 to 150°CTHERMAL RESISTANCE RATINGSParameterSymbol Limit Unit Junction-to-Ambient (PCB Mount)c R thJA 60°C/WJunction-to-Case (Drain)R thJC3创泰芯电子　只做原装３２６６６０６８４６Document Number: 65595Vishay SiliconixSUD45P03-09Notes:a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.b. Guaranteed by design, not subject to production testing.c. Independent of operating temperature.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.SPECIFICATIONS T J = 25 °C, unless otherwise notedParameter Symbol Test Conditions Min.Typ.Max.UnitStaticDrain-Source Breakdown Voltage V DS V DS = 0 V , I D = - 250 µA - 30V Gate Threshold Voltage V GS(th) V DS = V GS , I D = - 250 µA - 1- 2.5Gate-Body LeakageI GSS V DS = 0 V, V GS = ± 20 V ± 250nAZero Gate Voltage Drain Current I DSS V DS = - 30 V , V GS = 0 V 1µA V DS = - 30 V , V GS = 0 V , T J = 125 °C 50V DS = - 30 V , V GS = 0 V , T J = 150 °C250On-State Drain Current aI D(on) V DS ≤ - 10 V , V GS = - 10 V - 50A Drain-Source On-State Resistance a R DS(on) V GS = - 10 V, I D = - 20 A 0.00720.0087ΩV GS = - 4.5 V , I D = - 15 A 0.01250.0150Forward T ransconductance a g fsV DS = - 15 V , I D = - 20 A45S Dynamic bInput Capacitance C iss V GS = 0 V , V DS = - 15 V , f = 1 MHz2700pFOutput CapacitanceC oss 515Reverse Transfer Capacitance C rss 445Total Gate Charge c Q g V DS = - 15 V , V GS = - 10 V, ID = - 20 A 6090nC Gate-Source Charge c Q gs 9.3Gate-Drain Charge c Q gd 15Gate Resistance R g f = 1 MHz0.52.55ΩTurn-On Delay Time c t d(on) V DD = - 15 V , R L = 1.5 ΩI D ≅ - 10 A, V GEN = - 10 V , R g = 1 Ω1220ns Rise Time ct r 1120Turn-Off Delay Time c t d(off) 4060Fall Time ct f 1220Drain-Source Body Diode Ratings and Characteristics T C = 25°C b Continuous Current I S - 45A Pulsed Current I SM - 100Forward Voltage a V SD I F = - 10 A, V GS = 0 V- 0.8- 1.5V Reverse Recovery Time t rr I F = - 10 A, dI/dt = 100 A/µs 2740ns Peak Reverse Recovery Current I RM(REC)1.32A Reverse Recovery ChargeQ rr2030nCTransfer CharacteristicsTransconductanceGate ChargeDocument Number: 65595Document Number: 65595Vishay SiliconixSUD45P03-09TYPICAL CHARACTERISTICS 25°C, unless otherwise notedCapacitanceOn-Resistance vs. Junction TemperatureDrain Source Breakdown vs. Junction TemperatureCurrent DeratingVishay SiliconixSUD45P03-09Document Number: 65595TYPICAL CHARACTERISTICS 25°C, unless otherwise notedVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?65595.Single Pulse Avalanche Current Capability vs. TimeSafe Operating AreaPackage InformationVishay SiliconixRevision: 16-May-161Document Number: 71197TO-252AA Case OutlineNotes•Dimension L3 is for reference only.MILLIMETERSINCHESDIM.MIN.MAX.MIN.MAX.A 2.18 2.380.0860.094A1-0.127-0.005b 0.640.880.0250.035b20.76 1.140.0300.045b3 4.95 5.460.1950.215C 0.460.610.0180.024C20.460.890.0180.035D 5.97 6.220.2350.245D1 4.10-0.161-E 6.35 6.730.2500.265E1 4.32-0.170-H 9.4010.410.3700.410e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.780.0550.070L30.89 1.270.0350.050L4- 1.02-0.040L51.011.520.0400.060ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347Application Note 826Vishay SiliconixA P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR DPAK (TO-252)Legal Disclaimer NoticeVishayRevision: 13-Jun-161Document Number: 91000DisclaimerALL PRODUCT , PRODUCT SPECIFICAT IONS AND DAT A ARE SUBJECT T O CHANGE WIT HOUT NOT ICE T O IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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