SUB85N03-04P中文资料

Keysight TechnologiesPNA MicrowaveNetwork AnalyzersPNA Network Analyzers:E8362/3/4B, E8361A10 MHz to 20, 40, 50, 67, or 110 GHzPNA-L Network Analyzers:N5230A300 kHz to 6, 13.5, or 20 GHz10 MHz to 20, 40, or 50 GHzPNA-X Network Analyzers:N5242A10 MHz to 26.5 GHzWelcome to The World of PNAs –The Most Popular Microwave Network AnalyzersThe PNA Series builds on Keysight Technologies Inc. 40-year legacy of excellence todeliver new standards in speed, accuracy, and versatility for microwave network analysis. The PNA’s architecture includes high quality, stable hardware and lexible software. The standard PNA is suitable for testing passive and active devices such as ilters and ampliiers. Users can easily add options to test mixers, harmonics, intermodulation distortion (IMD), pulsed-RF, antennas and millimeter-wave (mmwave) components.Key features–Excellent performance–High dynamic range: 127 dB at 20 GHz at test port –Low trace noise: 0.002 dB rms at 1 kHz bandwidth –Fast measurement speed: 4.5 to 26 µsec/point –High stability: 0.05 dB/degrees Celsius–State-of-the-art calibration capabilities and wide-range of ECal modules –Advanced applications for mixer and pulse measurements –Single-ended and balanced measurements–32 measurement channels, unlimited traces, and 16,001 points per channel –Connectivity with Open Windows XP, 6 USB connectors, LAN, and GPIBPNA modelsPNA PNA-L PNA-X300 kHz to 6 GHz300 kHz to 13.5 GHz300 kHz to 20 GHz10 MHz to 20 GHz10 MHz to 40 GHz10 MHz to 50 GHz22 ports 10 MHzto 20 GHz10 MHzto 40 GHz10 MHzto 50 GHz10 MHzto 67 GHz10 MHzto 110 GHz10 MHz to 26.5 GHzCommon Features Across the PNA SeriesThe PNA-X integrates a 10.4 inch high resolution display with a touch screen, which provides a crisp view and easy access to all data and traces. This enhanced user interfaceallows intuitive operation and helps you set upcomplex measurements quickly.Flexible user interface:hard keys, soft keys, and pull-down menus Up to10 markers per trace32 measurement channels and unlimited traces State-of-the-art calibration capabilitiesOn-line HelpConigurable test set availableon all models Linear, log, power, CW, and segment sweep Equation editor and time-domainanalysis Quick access for ECal and otherUSB devicesPNA-X – The Premier-Performance Microwave Network AnalyzerThe industry-leading performance and highly integrated conigurable nature of the PNA-X make it the ideal solution to address active device measurement challenges.The PNA-X enables engineers to stay on the leading edge of component testing.High quality synthesizers–10 MHz to 26.5 GHz–Internal 2nd source for IMD, hot-S22, and high speed swept-LO measurements –High output power and wide power-sweep range for testing ampliiers–Excellent harmonic performance for accurate harmonic and IMD measurementsSensitive and linear receivers–High compression point for improved dynamic accuracy –More sensitivity for pulsed S-parameter measurementsFriendly user interface–Large 10.4 inch touch screen display –Click-and-drag markers and zoomExceptional lexibility–Built-in signal combiner for easy IMD and hot-S 22 measurements–Easy pulsed measurements with internal pulse modulators and pulse generators –Flexible signal routing via internal switches for adding external ilters, pre-ampliiers, and additional test equipment–Optional noise igure measurement capability extends the suite of measurements available with a single connection and offers the industry’s highest accuracy –Front-panel jumpers for direct access to test-port couplers and receivers–Source and receiver attenuators with 5 dB increments for better measurement optimization–Built-in bias-tees simplify ampliier evaluation–Three sets of triggering lines for complex test systemsPNA-X block diagram (shown with Options 400, 419, and 423).Built-in signal combiner Internal switches for routingexternal signalsPNA-X – Testing Beyond The Limits –Mixers and ConvertersPNA’s frequency offset capability offers industry-leading accuracy and ease-of-use for measuringmixers and frequency converters.Mixer measurementsChecklist–Conversion loss/gain, magnitude and phase–Input match, output match, and LO match–Isolation and compression–The two internal independent synthesizers with +13 dBm power and < 60 dBcharmonics eliminate the need for external synthesizers or components.–Advanced error correction–Patented vector-mixer calibration for measurement of absolute group delay–Scalar-mixer calibration (SMC) for match-corrected amplitude measurements–Signiicantly faster speed for ixed-IF (20 to 30 times faster than with an externalsource)–Easy-to-conigure multi-stage converter measurements–LO source control and LO power calibration–Mixer IMD–The simple two-step SMC calibration provides match-corrected conversion loss,error-corrected input and output match–Software tuning for embedded LOPNA-X – Ahead of The Curve – Ampliiers, Pulsed-RFThe PNA-X is an ideal tool for measuring ampliierspeciications, from gain and return loss, toharmonics and IMD.Ampliier measurementsChecklist–Gain, gain latness, reverse isolation, and return loss–Simple, fast, and accurate AM-AM and AM-PM compression measurements with the Gain Compression Application with 38 dB power sweep range at 20 GHz, +13 dBmoutput power–Test harmonics accurately with < 60 dBc source harmonics. No need for externalilters.– Accurate and simple IMD using the dual sources and internal combiner, locatedbehind the couplers, providing highly accurate and stable measurements. No needfor external combiners.–S ource corrected noise igure measurements with exceptional accuracy–I ntegrated source attenuators and receiver attenuators for measurementoptimization–Perform all of the above measurements with one single connection using thePNA–X.Pulsed-RF measurementsChecklist–Wideband and narrowband detection–Up to four internal pulse generators–U p to two internal pulse modulators–Pulse widths as narrow as 33 ns–Pulse-to-pulse–Point-in-pulse, average pulse, and pulse-proile capability–No need for external componentsUse TRL calibration for accurate in-ixture, on-wafer, or waveguide measurements.The Keysight PNA-L is designed for your general-purpose network analysis needs and priced for your budget. With the same irmware as the PNA, the PNA-L offers the perfect balance of value and performance. PNA-L provides eficiency and lexibility in both manufacturing and R&D applications, for industries ranging from wireless LAN component production to aerospace and defense.Basic measurements Checklist–Insertion loss, gain, return loss, isolation, group delay, compression, both magnitude and phase–Connectorized, in-ixture, or on-wafer –Fast and accurate–Reliable and repeatable –AffordableOn-wafer measurements Checklist–Class of TRL calibrations for accurate measurements–Differential measurement capabilities with integrated multiport network analyzers –Accurate power control and de-embedding algorithm for device characterization –Compatibility with on-wafer calibration software for a total solutionPNA-L – Speed and Accuracy You Can Count On – Balanced/Differential Measurements and Multiport TestEasily measure single-ended, balanced, and mixed-mode S-parameters,in addition to ratioed and unratioed receiver measurements.New multiport components require complicated test plans. Multiple port combinations must be tested over several frequency bands, resulting in lengthy tests. To reduce test time and lower costs, the PNA-L/PNA-X and test set combinations have been designed for high-speed measurements. To further simplify complex test requirements, up to 32 independent channels are available, eliminating the need for recalling instrument states.Adding a 4-port test set expands the 4-port PNA-L to an 8-port system with full 8-port mea-surement capabilities.GSM/TDMA Rx GSM/TDMA Tx GSM/TDMA Tx GSM Rx TDMA RxDifferential measurements Checklist–Single-ended, balanced, mixed-mode –S-parameters–Ratioed and unratioed measurements –Mode-conversion analysis–True-mode stimulus measurementsMultiport measurements Checklist–Multiport conigurations optimized for your device, including full cross-bar –Quick-Short-Open-Load-Thru (QSOLT) for fast, multiport cal –N-port calibration for accuracy and ease-of-measurements –Test-set control part of PNA irmware–32 independent channels for fast measurement speedTri-band antenna switch module with balanced and single-ended ports.PNA – The Solution for Your Mmwave NeedsThe N5250A PNA-based mmwave system has superb dynamic range. Shown hereis the S21 of a ilter at 94 GHz, compared to the 8510XF.Use time domain to gate out the response of ixtures and cables, and characterizethe impedance of transmission lines.Millimeter-wave measurementsChecklist–PNA-based 10 MHz to 110 GHz bench-top system, extendable to 325 GHz –Compact test-heads and two built-in synthesizers, for up to 110 GHz–Highly stable systems–No external synthesizes to 325 GHz, when used with PNA-X–Supported applications – pulsed-RF, antenna, and on-waferTime-domain analysisChecklist–Locate and resolve mismatches in the ixture, cable, or transmission lines –Use gating to remove unwanted responses–Fault-locationPNA Series Simpliies Measurements – When the Requirements are Dificult Modeling, PLTS, Antenna, Materials TestHigh-frequency design and modelingChecklist–PNA drivers included in Connection Manager for easy connectivity–Simple downloading of S-parameters into ADS for simulation–Save “.s2p, .s4p, snp” iles and import into ADS–M odeling of devices using IC-CAP and PNA network analyzersPhysical Layer Test Systems (PLTS)Checklist–RLCG model extraction and eye-diagrams–High-speed differential interconnect design–Multiple aggressor differential crosstalkAntenna measurementsChecklist–20,001 points per channel–Fast measurement speed, 4.5 µs/pt–Forward and reverse sweeps for near-ield scans–High-sensitivityMaterials measurementsChecklist–Measurement of dielectric and magnetic properties–Viewing of data in real, imaginary, loss tangent, and Cole-Cole formats–Availability of a variety of techniques to meet your materials needsPNA-L/PNA/PNA-X Comparison Table: Solution available Blank : Solution not available Good and superb : Solution available, quality of solution qualiied. For example, withmaximum output power levels, all PNAs have output power, but thePNA-X has the highest output power.1. 4-port PNA-L has one source attenuator. 4-port PNA-X has 4 source attenuators.2. Applicable to high-power ampliier testing or integration of the external test equipment.PNA – State-Of-The-Art Calibration CapabilitiesHigh-performance ECal modules–High-performance ECal modules, 10 MHz to–26.5 GHz, 10 MHz to 67 GHz and more–Nine connector types, mixed-connector modules–U ser characterization for adding adaptersCalibration for non-insertable devices–Unknown through calibration–QSOLT and n-port calibration (6-port, 8-port, 12-port, etc)for multiport test systems–Databased-model and expanded math calibrations for highest accuracyIn-ixture measurements–Frequency response cal, 1-port cal, 2-port cal, enhanced response-cal, TRL/TRM cal and adapter-removal cal–An easy-to-use uncertainty calculator, and a comprehensive application note on calibration standards–Automatic port extension removes loss and delay for in-ixture devicesAdvanced mixer and ampliier calibrations–The patented vector mixer calibration and the popular scalar-mixer calibration–De-embedding of attenuators and the new fast source power calibration technique for ampliier measurements–De-embedding of probes and waveguides in mixer measurements–Unique noise igure calibration removes the effects of imperfect system source matchPNA - The standard for accuracyAll the network analyzers in the PNA family are known for their high-levels of stability, contributing to accurate calibrationsand measurements. With the PNA-X, users can beneit from exceptional levels of dynamic accuracy. For users in non-linear environments, the PNA’s Scalar Mixer Calibration provides a higher level of measurement accuracy.Stability of a 20 GHz PNA over a 30-hour period1 It is clear that the more stable the hardware, the better the calibration, since it can correct the errors better. The calibration will remain stable as a function of time and temperature, and calibrations will not need to be updated as often.Typical dynamic accuracy of a PNA-X, with –20dBm powerIf you are measuring a device with 20 dB insertion loss, the contribution of the dynamic accuracy error (receiver linearity) is less than 0.01 dB.Scalar-mixer calibration versus a simple power meter/receiver calibrationNote the effects of mismatch that are corrected for by SMC.110 GHz PNA drift over a 24-hour period1As you can see on the graph, the 110 GHz PNA drifts less than 0.7 dB, after 24 hours, at 110 GHz. Keysight’s 110 GHz PNA system is the most stable mmwave system in the industry.1. Measurements made at 25 ± 1 degree Celcuis.Outstanding Performance# of ports22424 Dynamic range1123 dB108 dB103 dB127 dB127 dB Noise loor–120 dBm–105 dBm–106 dBm–114 dBm–114 dBm Max output power+3 dBm+3 dBm–3 dBm+13 dBm+13 dBm 0.1 dB compression–5 dBm input+6 dBm input+9 dBm input+12 dBm input+12 dBm inputTrace noise0.006 dB rms1 kHz IFBW0 dBm 0.006 dB rms1 kHz IFBW–5 dBm0.010 dB rms100 kHz IFBW–5 dBm0.005 dB rms100 kHz IFBW–5 dBm0.005 dB rms100 kHz IFBW–5 dBmALC range27 dB23 dB22 dB38 dB38 dB Max IFBW40 kHz250 kHz600 kHz 5 MHz 5 MHz Speed26 µs/pt9 µs/pt 4.5 µs/pt 4.5 µs/pt 4.5 µs/pt Display size, LCD21.3 cm21.3 cm21.3 cm26.4 cm26.4 cm Touch screen No No No Yes Yes1.20 GHz, test port, 10 Hz IFBW.Dynamic range123 dB108 dBNoise loor–120 dBm–105 dBmMax output power+3 dBm+3 dBm0.1 dB compression–5 dBm input+6 dBm inputTrace noise (1 kHz)0.006 dB rms1 kHz IFBW0 dBm 0.006 dB rms1 kHz IFBW–5 dBmALC range27 dB23 dB Max IFBW40 kHz250 kHz Speed26 µs/pt9 µs/ptCompleting The SolutionProtect conidential dataThe best method for maintaining security is to remove the hard disk drive. The PNA pro-vides the removable hard disk drive as a standard feature, enabling you to easily remove the drive and keep it safe in a secure area.Protect your software investmentKeysight protects your 8753, 8720 and 8510 software investment by providing migration tools to reduce your code conversion effort./find/nadiscoNetwork analyzer forumVisit the online network analyzer discussion forum where you can learn how your peers are solving some of their most challenging measurement problems./ind/agilent_naforumFree CD - Network analyzer application notes and video demos Application topics include ampliiers, mixers/converters, pulsed-RF, millimeter/sub millimeter-wave, and materials measurements./ind/nacdWeb ResourcesVisit our Web sites for additional product information and literature. PNA-X microwave network analyzers/find/pna-xPNA-L microwave network analyzers/find/pnalPNA microwave network analyzers/find/pnaENA RF network analyzers/find/enaPhysical layer test systems/find/pltsMultiport test solutions/find/multiportAntenna test/find/antennaElectronic calibration (ECal) modules/find/ecalRF and microwave accessories/find/accessoriesMechanical and electronic calibrationkits and pulsed-RF measurements/find/pulsedrfKeysight RF & microwave networkanalyzer calibration resources/find/nacalRF and microwave network analysis and impedance probings /find/probingrfMaterials measurements/find/materialsBalanced measurements/find/balancedmyKeysight/find/mykeysightA personalized view into the information most relevant to you.Three-Year Warranty/find/ThreeYearWarrantyKeysight’s commitment to superior product quality and lower total costof ownership. The only test and measurement company with three-yearwarranty standard on all instruments, worldwide.Keysight Assurance Plans/find/AssurancePlansUp to five years of protection and no budgetary surprises to ensure yourinstruments are operating to specification so you can rely on accuratemeasurements./qualityKeysight Technologies, Inc.DEKRA Certified ISO 9001:2008Quality Management SystemKeysight Channel Partners/find/channelpartnersGet the best of both worlds: Keysight’s measurement expertise and productbreadth, combined with channel partner convenience./find/pnaThis information is subject to change without notice.© Keysight Technologies, 2007 - 2014Published in USA, July 31, 20145989-6014ENFor more information on KeysightTechnologies’ products, applications orservices, please contact your local Keysightoffice. The complete list is available at:/find/contactusAmericasCanada(877) 894 4414Brazil55 11 3351 7010Mexico001 800 254 2440United States(800) 829 4444Asia PaciicAustralia 1 800 629 485China800 810 0189Hong Kong800 938 693India 1 800 112 929Japan0120 (421) 345Korea080 769 0800Malaysia 1 800 888 848Singapore180****8100Taiwan0800 047 866Other AP Countries(65) 6375 8100Europe & Middle EastAustria0800 001122Belgium0800 58580Finland0800 523252France0805 980333Germany***********Ireland1800 832700Israel 1 809 343051Italy800 599100Luxembourg+32 800 58580Netherlands0800 0233200Russia8800 5009286Spain0800 000154Sweden0200 882255Switzerland0800 805353Opt. 1 (DE)Opt. 2 (FR)Opt. 3 (IT)United Kingdom0800 0260637For other unlisted countries:/find/contactus(BP-07-01-14)。

NTP85N03, NTB85N03Power MOSFET 85 Amps, 28 VoltsN−Channel TO−220 and D 2PAKDesigned for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.Typical Applications•Power Supplies •Converters•Power Motor Controls •Bridge CircuitsMAXIMUM RATINGS (T= 25°C unless otherwise noted)(Cu Area 1.127 in 2).*Chip current capability limited by package.Device Package Shipping ORDERING INFORMATIONNTP85N03TO−220AB 50 Units/Rail NTB85N03D 2PAK 50 Units/Rail NTB85N03T4D 2PAK800/T ape & ReelELECTRICAL CHARACTERISTICS(T J = 25°C unless otherwise noted)OFF CHARACTERISTICSON CHARACTERISTICS (Note 2)DYNAMIC CHARACTERISTICSSWITCHING CHARACTERISTICS (Note 3)SOURCE−DRAIN DIODE CHARACTERISTICS3.Switching characteristics are independent of operating junction temperatures.50403020100I D , D R A I N C U R R E N T (A M P S )R D S (o n ), D R A I N −T O −S O U R C E R E S I S T A N C E (W )T J , JUNCTION TEMPERATURE (°C)V DS , DRAIN−TO−SOURCE VOLTAGE (VOLTS)R D S (o n ), D R A I N −T O −S O U R C E R E S I S T A N C E (N O R M A L I Z E D )Figure 5. On−Resistance Variation withTemperature Figure 6. Drain−to−Source Leakage Currentversus Voltage−505025−257512510041281620150POWER MOSFET SWITCHINGSwitching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (D t)are determined by how fast the FET input capacitance can be charged by current from the generator.The published capacitance data is difficult to use for calculating rise and fall because drain−gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (I G(A V)) can be made from a rudimentary analysis of the drive circuit so that t = Q/I G(A V)During the rise and fall time interval when switching a resistive load, V GS remains virtually constant at a level known as the plateau voltage, V SGP . Therefore, rise and fall times may be approximated by the following:t r = Q 2 x R G /(V GG − V GSP )t f = Q 2 x R G /V GSPwhereV GG = the gate drive voltage, which varies from zero to V GG R G = the gate drive resistanceand Q 2 and V GSP are read from the gate charge curve.During the turn−on and turn−off delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are:t d(on) = R G C iss In [V GG /(V GG − V GSP )]t d(off) = R G C iss In (V GG /V GSP )The capacitance (C iss ) is read from the capacitance curve at a voltage corresponding to the off−state condition when calculating t d(on) and is read at a voltage corresponding to the on−state when calculating t d(off).At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths,produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified.The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed.The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load;however, snubbing reduces switching losses.GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE(VOLTS)C , C A P A C I T A N C E (p F )−15500045001035003000155−52025002000150010000−10Figure 7. Capacitance Variation2550040000Q g , TOTAL GATE CHARGE (nC)V G S , G A T E −T O −S O U R C E V O L T A G E (V )R G , GATE RESISTANCE (W )V SD , SOURCE−TO−DRAIN VOLTAGE (VOLTS)I S , S O U R C E C U R R E N T (A M P S )t , T I M E (n s )1512963Figure 8. Gate−to−Source andDrain−to−Source Voltage versus Total ChargeFigure 9. Resistive Switching Time Variationversus Gate ResistanceFigure 10. Diode Forward Voltage versus Current24681012061218243036V D S , D R A I N −T O −S O U R C E V O L T A G E (V )1101001000SAFE OPERATING AREAThe Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T C ) of 25°C.Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, “Transient Thermal Resistance −General Data and Its Use.”Switching between the off−state and the on−state may traverse any load line provided neither rated peak current (I DM ) nor rated voltage (V DSS ) is exceeded and the transition time (t r ,t f ) do not exceed 10 m s. In addition the total power averaged over a complete switching cycle must not exceed (T J(MAX) − T C )/(R q JC ).A Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. Forreliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non−linearly with an increase of peak current in avalanche and peak junction temperature.Although many E−FETs can withstand the stress of drain−to−source avalanche at currents up to rated pulsed current (I DM ), the energy rating is specified at rated continuous current (I D ), in accordance with industry custom.The energy rating must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents below rated continuous I D can safely be assumed to equal the values indicated.INFORMATION FOR USING THE D2PAK SURFACE MOUNT PACKAGE RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONSSurface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.SOLDER STENCIL GUIDELINESPrior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These stencils are typically 0.008 inches thick and may be made of brass or stainless steel. For packages such as the SC−59, SC−70/SOT−323, SOD−123, SOT−23, SOT−143, SOT−223, SO−8, SO−14, SO−16, and SMB/SMC diode packages, the stencil opening should be the same as the pad size or a 1:1 registration. This is not the case with the DPAK and D2PAK packages. If one uses a 1:1 opening to screen solder onto the drain pad, misalignment and/or “tombstoning” may occur due to an excess of solder. For these two packages, the opening in the stencil for the paste should be approximately 50% of the tab area. The opening for the leads is still a 1:1 registration. Figure 11 shows a typical stencil for the DPAK and D2PAK packages. The pattern of the opening in the stencil for the drain pad is not critical as long as it allows approximately 50% of the pad to be covered with paste.Figure 11. Typical Stencil for DPAK andD2PAK PackagesSOLDER PASTEOPENINGSSTENCILSOLDERING PRECAUTIONSThe melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected.•Always preheat the device.•The delta temperature between the preheat and soldering should be 100°C or less.*•When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.•The soldering temperature and time shall not exceed 260°C for more than 10 seconds.•When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less.•After soldering has been completed, the device should be allowed to cool naturally for at least three minutes.Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.•Mechanical stress or shock should not be applied during cooling.* *Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.* *Due to shadowing and the inability to set the wave height to incorporate other surface mount components, the D2PAK is not recommended for wave soldering.TYPICAL SOLDER HEATING PROFILEFor any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones,and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 12 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time.The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177−189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30degrees cooler than the adjacent solder joint.STEP 1PREHEAT ZONE 1STEP 2VENT “SOAK”STEP 3HEATING ZONES 2 & 5STEP 4HEATING ZONES 3 & 6STEP 5HEATING ZONES 4 & 7STEP 6VENT STEP 7COOLING 200°150°100°5°°C Figure 12. Typical Solder Heating ProfileTO−220CASE 221A−09ISSUE AASTYLE 5:PIN 1.GATE2.DRAIN3.SOURCE4.DRAIND 2PAKCASE 418AA−01ISSUE OVIEW W−WVIEW W−WVIEW W−W123ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。