IRF1010E[1]

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Typ.
––– 0.50 –––
Max.
0.75 ––– 62
Units
°C/W

1
3/16/01
IRF1010E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
I D , Drain-to-Source Current (A)
2.5
TJ = 25 ° C TJ = 175 ° C
2.0
100
1.5
1.0
0.5
10 4 5 6 7
V DS = 25V 20µs PULSE WIDTH 8 9 10 11
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
D
VDSS = 60V RDS(on) = 12mΩ
G S
ID = 84A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Max. 84
59 330 200 1.4 ± 20 50 17 4.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A W W/°C V A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width ≤ 400µs; duty cycle ≤ 2%. This is a typical value at device destruction and represents
Min. 60 ––– ––– 2.0 69 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 12 mΩ VGS = 10V, ID = 50A 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 50A 25 VDS = 60V, VGS = 0V µA 250 VDS = 48V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 50A 28 nC VDS = 48V 44 VGS = 10V, See Fig. 6 and 13 ––– VDD = 30V ––– ID = 50A ns ––– RG = 3.6Ω ––– VGS = 10V, See Fig. 10 Between lead, 4.5 ––– 6mm (0.25in.) nH G from package 7.5 ––– and center of die contact 3210 ––– VGS = 0V 690 ––– VDS = 25V 140 ––– pF ƒ = 1.0MHz, See Fig. 5 1180 320 mJ IAS = 50A, L = 260µH
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
4.5V
1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10 100
10 0.1
20µs PULSE WIDTH TJ = 175 °C
1 10 100
VDS , Drain-to-Source Voltage (V)
operation outside rated limits.
Starting TJ = 25°C, L = 260µH
RG = 25Ω, IAS = 50A, VGS =10V (See Figure 50A, ISD ≤12) di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Min. Typ. Max. Units
Conditions D MOSFET symbol ––– ––– 84 showing the A G integral reverse ––– ––– 330 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 50A, VGS = 0V ––– 73 110 ns TJ = 25°C, IF = 50A ––– 220 330 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
PD - 91670
IRF1010E
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
2

IRF1010E
1000
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
I D , Drain-to-Source Current (A)
100
4.5V
10
I D , Drain-to-Source Current (A)
VDS , Drain-t Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
I D = 84A
R DS(on) , Drain-to-Source On Resistance (Normalized)
This is a calculated value limited to TJ = 175°C . Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy