$%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFHDoc. No. 5SYA 1556-01 Oct 03•/RZ ORVV UXJJHG 637 FKLS VHW •6PRRWK VZLWFKLQJ 637 FKLS VHW IRU JRRG (0&•,QGXVWU\ VWDQGDUG SDFNDJH •+LJK SRZHU GHQVLW\•$O6L& EDVH SODWH IRU KLJK SRZHU F\FOLQJ FDSDELOLW\•$O1 VXEVWUDWH IRU ORZ WKHUPDO UHVLVWDQFH0D[LPXP UDWHG YDOXHV3DUDPHWHU6\PERO &RQGLWLRQV PLQPD[8QLW Collector-emitter voltage V CES V GE = 0 V 3300V DC collector current I C T c = 80 °C 1200A Peak collector current I CM t p = 1 ms, T c = 80 °C2400A Gate-emitter voltage V GES -2020V Total power dissipation P tot T c = 25 °C, per switch (IGBT)14700W DC forward current I F 1200A Peak forward current I FM 2400A Surge currentI FSM V R = 0 V, T vj = 125 °C,t p = 10 ms, half-sinewave 11000A IGBT short circuit SOA t psc V CC = 2500 V, V CEM CHIP ≤ 3300 V V GE ≤ 15 V, T vj ≤ 125 °C 10µs Isolation voltage V isol 1 min, f = 50 Hz6000V Junction temperatureT vj 150°C Junction operating temperature T vj(op)-40125°C Storage temperature T stg -40125°C M 1Base-heatsink, M6 screws 46Mounting torquesM 2Main terminals, M8 screws810Nm1) Maximum rated values indicate limits beyond which damage to the device may occur3DUDPHWHU 6\PERO &RQGLWLRQV PLQ W\S PD[8QLW Collector (-emitter)breakdown voltage V (BR)CES V GE = 0 V, I C = 10 mA, T vj = 25 °C 3300VT vj = 25 °C 3.1V Collector-emitter 2)saturation voltageV CE sat I C = 1200 A, V GE = 15 V T vj = 125 °C 3.8V T vj = 25 °C 12mA Collector cut-off current I CES V CE = 3300 V, V GE = 0 VT vj = 125 °C120mA Gate leakage current I GES V CE = 0 V, V GE = ±20 V, T vj = 125 °C -500500nA Gate-emitter threshold voltage V GE(TO)I C = 240 mA, V CE = V GE , T vj = 25 °C 68V Gate charge Q ge I C = 1200 A, V CE = 1800 V,V GE = -15 V .. 15 V12.1µCInput capacitance C ies 187Output capacitanceC oes 11.57Reverse transfer capacitance C res V CE = 25 V, V GE = 0 V, f = 1 MHz,T vj = 25 °C2.22nFT vj = 25 °C 400Turn-on delay time t d(on)T vj = 125 °C 400ns T vj = 25 °C 175Rise timet r V CC = 1800 V,I C = 1200 A,R G = 1.5 Ω,V GE = ±15 V,L σ = 100 nH, inductive load T vj = 125 °C 200ns T vj = 25 °C 940Turn-off delay time t d(off)T vj = 125 °C 1070ns T vj = 25 °C 350Fall timet fV CC = 1800 V,I C = 1200 A,R G = 1.5 Ω,V GE = ±15 V,L σ = 100 nH, inductive load T vj = 125 °C 440nsT vj = 25 °C 1340Turn-on switching energy E on V CC = 1800 V, I C = 1200 A,V GE = ±15, R G = 1.5 Ω,L σ = 100 nH, inductive load T vj = 125 °C 1890mJT vj = 25 °C 1420Turn-off switching energy E off V CC = 1800 V, I C = 1200 A,V GE = ±15, R G = 1.5 Ω,L σ = 100 nH, inductive loadT vj = 125 °C1950mJ Short circuit current I SC t psc V 9GE = 15 V, T vj = 125 °C,V CC = 2500 V, V CEM CHIP 3300 V5000A Module stray inductance L σ CE 10nH T C = 25 °C 0.06Resistance, terminal-chipR CC ’+EE ’T C = 125 °C0.085m2) Collector emitter saturation voltage is given at chip level3DUDPHWHU6\PERO &RQGLWLRQV PLQ W\S PD[8QLW T vj = 25 °C 2.3Continous forward voltage 3)V F I F = 1200 AT vj = 125 °C 2.35V T vj = 25 °C 1100Peak reverse recovery currentI RM T vj = 125 °C 1350A T vj = 25 °C 715Recovered charge Q RR T vj = 125 °C 1280µC T vj = 25 °C 520Reverse recovery time t rr T vj = 125 °C 1450ns T vj = 25 °C 840Reverse recovery energyE recV CC = 1800 V,I F = 1200 A,V GE = ±15 V,R G = 1.5 ΩL σ = 100 nH inductive load T vj = 125 °C1530mJ3) Forward voltage is given at chip level7KHUPDO SURSHUWLHV3DUDPHWHU6\PERO &RQGLWLRQV PLQW\SPD[8QLWIGBT thermal resistance junction to caseR th(j-c)IGBT 0.0085K/W Diode thermal resistance junction to case R th(j-c)DIODE 0.017K/WThermal resistance case to heatsinkR th(c-h)per module, λ grease = 1W/m x K0.006K/W0HFKDQLFDO SURSHUWLHV3DUDPHWHU 6\PERO &RQGLWLRQVPLQ W\S PD[8QLW Dimensions L x Wx H Typical , see outline drawing 190 x 140 x 38mm Term. to base:23Clearance distance D C according to IEC 60664-1and EN 50124-1Term. to term:19mm Term. to base:33Surface creepage distance D SCaccording to IEC 60664-1and EN 50124-1Term. to term:32mmWeight1500gr7KLV LV DQ HOHFWURVWDWLF VHQVLWLYH GHYLFH SOHDVH REVHUYH WKH LQWHUQDWLRQDO VWDQGDUG ,(& FKDS ,;)LJ )LJvs collector current vs gate resistorvs collector current vs gate resistorvs collector-emitter voltagevs gate resistorvs forward currentThis technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.$%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH$%% 6ZLW]HUODQG /WG Doc. No. 5SYA 1556-01 Oct 036HPLFRQGXFWRUV Fabrikstrasse 3CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419Fax +41 (0)58 586 1306Email abbsem@Internet/semiconductors$QDO\WLFDO IXQFWLRQ IRU WUDQVLHQW WKHUPDOLPSHGDQFH)e-(1R = (t)Z n1i t/-i JC th i∑=τi12345Ri(K/kW) 5.50 1.530.6210.646I G B Tτi (ms)19331.28.0 1.48Ri(K/kW)11.2 3.73 1.300.42D I O D Eτi (ms)18924.52.692.36。