MBR4045PTG;MBR4045PT;中文规格书,Datasheet资料

MBR1635, MBR1645, MBRB1645MBR1645 is a Preferred Device SWITCHMODE EPower Rectifiers16 A, 35 and 45 VThese state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal.Features•Guard−ring for Stress Protection•Low Forward V oltage•175°C Operating Junction Temperature•Pb−Free Packages are AvailableMechanical Characteristics:•Case: Epoxy, Molded•Weight:1.9 Grams for TO−2201.7 Grams for D2PAK•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable•Lead Temperature for Soldering Purposes:260°C Max. for 10 SecondsMAXIMUM RATINGSRating Symbol Value UnitPeak Repetitive Reverse Voltage Working Peak Reverse VoltageDC Blocking Voltage MBR1635MBR1645MBRB1645V RRMV RWMV R354545VAverage Rectified Forward Current Delay (Rated V R, T C = 163°C) Total Device I F(AV)16APeak Repetitive Forward Current, PerLeg(Rated V R, Square Wave,20 kHz, T C = 157°C) Total DeviceI FRM32ANon−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)IFSM150APeak Repetitive Reverse Surge Current(2.0 m s, 1.0 kHz)I RRM 1.0A Storage Temperature Range T stg−65 to +175°C Operating Junction Temperature (Note 1)T J−65 to +175°C Voltage Rate of Change (Rated V R)dv/dt10,000V/m s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.The heat generated must be less than the thermal conductivity fromJunction−to−Ambient: dP D/dT J < 1/R q JA.Device Package ShippingORDERING INFORMATIONMBR1635TO−22050 Units / RailMBR1635G TO−220(Pb−Free)50 Units / RailPreferred devices are recommended choices for future use and best overall value.1, 4MARKINGDIAGRAMSA= Assembly LocationY= YearWW= Work WeekB16x5= Device Codex= 3 or 4KA= Diode PolarityG= Pb−Free PackageMBR1645TO−22050 Units / Rail MBR1645G TO−220(Pb−Free)50 Units / RailB1645GAYWWD2PAKCASE 418BSTYLE 34B1645= Device CodeA= Assembly LocationY= YearWW= Work WeekG= Pb−Free PackageMBRB1645T4G D2PAK(Pb−Free)800 Units / Rail34THERMAL CHARACTERISTICSCharacteristic Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case R q JC 1.5°C/W ELECTRICAL CHARACTERISTICSCharacteristic Symbol Value UnitMaximum Instantaneous Forward Voltage (Note 2) (i F = 16 Amps, T C = 125°C)(i F = 16 Amps, T C = 25°C)v F0.570.63VMaximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, T C = 125°C)(Rated dc Voltage, T C = 25°C)i R400.2mA2.Pulse Test: Pulse Width = 300 m s, Duty Cycle ≤2.0%.Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Currentv F , INSTANTANEOUS FORWARD VOLTAGE (V)10070205010V R , REVERSE VOLTAGE (V)i F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )7.05.03.02.01.030 1.0E −1.0E −1.0E −1.0E −1.0E −1.0E −1.0E −R Figure 3. Current Derating, Case, Per LegFigure 4. Current Derating, AmbientFigure 5. Forward Power DissipationI F(AV), AVERAGE FORWARD CURRENT (A)168.06.04.02.00P 141012, A V E R A G E P O W E R D I S S I P A T I O N (W )F (A V E )T C , CASE TEMPERATURE (°C)T A , AMBIENT TEMPERATURE (°C)02468I F (A V ), A V E R A G E F O R W A R D C U R R E N T (A )I F (A V ), A V E R A G E F O R W A R DC U R R E N T (A )10121410121416182022242628161820STYLE 3:PIN 1.ANODE2.CATHODE3.ANODE4.CATHODED 2PAK CASE 418B −04ISSUE Jǒmm inchesǓ*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.V DIM MIN MAX MIN MAX MILLIMETERS INCHES A 0.3400.3808.649.65B 0.3800.4059.6510.29C 0.1600.190 4.06 4.83D 0.0200.0350.510.89E 0.0450.055 1.14 1.40G 0.100 BSC 2.54 BSC H 0.0800.110 2.03 2.79J 0.0180.0250.460.64K 0.0900.110 2.29 2.79S 0.5750.62514.6015.88V0.0450.0551.14 1.40NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.418B −01 THRU 418B −03 OBSOLETE,NEW STANDARD 418B −04.F 0.3100.3507.878.89L 0.0520.072 1.32 1.83M 0.2800.3207.118.13N 0.197 REF 5.00 REF P0.079 REF 2.00 REF R 0.039 REF 0.99 REF VARIABLEVIEW W −WVIEW W −WVIEW W −W123TO −220PLASTIC CASE 221B −04ISSUE EUDIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.5950.62015.1115.75B 0.3800.4059.6510.29C 0.1600.190 4.06 4.82D 0.0250.0350.640.89F 0.1420.161 3.61 4.09G 0.1900.210 4.83 5.33H 0.1100.130 2.79 3.30J 0.0140.0250.360.64K 0.5000.56212.7014.27L 0.0450.060 1.14 1.52Q 0.1000.120 2.54 3.04R 0.0800.110 2.04 2.79S 0.0450.055 1.14 1.39T 0.2350.255 5.97 6.48U0.0000.0500.000 1.27NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATIONSWITCHMODE is a trademark of Semiconductor Components Industries, LLC.分销商库存信息:ONSEMIMBR1645G MBR1635G MBRB1645T4G。

TC4404/TC4405Features:•Independently Programmable Rise and Fall Times•Low Output Impedance – 7Ω Typ.•High Speed t R, t F –<30 nsec with 1000 pF Load •Short Delay Times – <30 nsec•Wide Operating Range:- 4.5V to 18V•Latch-Up Protected: Will Withstand > 500 mA Reverse Current (Either Polarity)•Input Withstands Negative Swings Up to -5VApplications:•Motor Controls•Driving Bipolar Transistors•Driver for Non-overlapping Totem Poles •Reach-Up/Reach-Down DriverDevice Selection Table General Description:The TC4404/TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so that individual connections can be made to the pull-up and pull-down sections of the output. This allows the insertion of drain-current-limiting resistors in the pull-up and/or pull-down sections, allowing the user to define the rates of rise and fall for a capacitive load; or a reduced output swing, if driving a resistive load, or to limit base current, when driving a bipolar transistor. Minimum rise and fall times, with no resistors, will be less than 30 nsec for a 1000 pF load.For driving MOSFETs in motor-control applications, where slow-ON/fast-OFF operation is desired, these devices are superior to the previously used technique of adding a diode-resistor combination between the driver output and the MOSFET, because they allow accurate control of turn-ON, while maintaining fast turn-OFF and maximum noise immunity for an OFF device. When used to drive bipolar transistors, these drivers maintain the high speeds common to other Microchip drivers. They allow insertion of a base current-limiting resistor, while providing a separate half-output for fast turn-OFF. By proper positioning of the resistor, either npn or pnp transistors can be driven.For driving many loads in low-power regimes, these drivers, because they eliminate shoot-through currents in the output stage, require significantly less power at higher frequencies, and can be helpful in meeting low-power budgets.Part Number Package Temp. RangeTC4404COA8-Pin SOIC0°C to +70°CTC4404CPA8-Pin PDIP0°C to +70°CTC4404EOA8-Pin SOIC-40°C to +85°CTC4404EPA8-Pin PDIP-40°C to +85°CTC4404MJA8-Pin CERDIP-55°C to +125°CTC4405COA8-Pin SOIC0°C to +70°CTC4405CPA8-Pin PDIP0°C to +70°CTC4405EOA8-Pin SOIC-40°C to +85°CTC4405EPA8-Pin PDIP-40°C to +85°CTC4405MJA8-Pin CERDIP-55°C to +125°C1.5A Dual Open-Drain MOSFET Drivers© 2006 Microchip Technology Inc.DS21418C-page 1TC4404/TC4405DS21418C-page 2© 2006 Microchip Technology Inc.Because neither drain in an output is dependent on the other, these devices can also be used as open-drain buffer/drivers where both drains are available in one device, thus minimizing chip count. Unused open drains should be returned to the supply rail that their device sources are connected to (pull-downs to ground, pull-ups to V DD ), to prevent static damage. In addition, in situations where timing resistors or other means of limiting crossover currents are used, like drains may be paralleled for greater current carrying capacity.These devices are built to operate in the most demand-ing electrical environments. They will not latch-up under any conditions within their power and voltage ratings; they are not subject to damage when up to 5V of noise spiking of either polarity occurs on their ground pin; and they can accept, without damage or logic upset, up to 1/2 amp of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 2 kV of electrostatic discharge.TC4404/TC44051.0ELECTRICALCHARACTERISTICSAbsolute Maximum Ratings*Supply Voltage.....................................................+22V Power Dissipation (T A≤ 70°C)PDIP........................................................730 mW CERDIP..................................................800 mW SOIC.......................................................470 mW Package Thermal ResistancePDIP RθJ-A.............................................125°C/W PDIP RθJ-C...............................................45°C/W CERDIP RθJ-A........................................150°C/W CERDIP RθJ-C..........................................55°C/W SOIC RθJ-A.............................................155°C/W SOIC RθJ-C...............................................45°C/W Operating Temperature RangeC Version........................................0°C to +70°C E Version......................................-40°C to +85°C M Version...................................-55°C to +125°C Storage Temperature Range..............-65°C to +150°C *Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.TC4404/TC4405 ELECTRICAL SPECIFICATIONSElectrical Characteristics: T A = +25°C, with 4.5V ≤ V DD ≤ 18V, unless otherwise noted.Symbol Parameter Min Typ Max Units Test ConditionsInputV IH Logic 1, High Input Voltage 2.4——VV IL Logic 0, Low Input Voltage——0.8VI IN Input Current-1—1μA0V ≤ V IN ≤ V DDOutputV OH High Output Voltage V DD – 0.025——VV OL Low Output Voltage——0.025VR O Output Resistance—710ΩI OUT = 10 mA, V DD = 18V; Any Drain I PK Peak Output Current (Any Drain)— 1.5—A Duty cycle ≤ 2%, t ≤ 300 μsecI DC Continuous Output Current (Any Drain)——100mAI R Latch-Up Protection (Any Drain)Withstand Reverse Current—>500—mA Duty cycle ≤ 2%, t ≤ 300 μsec Switching Time (Note 1)t R Rise Time—2530nsec Figure3-1, C L = 1000 pFt F Fall Time—2530nsec Figure3-1, C L = 1000 pFt D1Delay Time—1530nsec Figure3-1, C L = 1000 pFt D2Delay Time—3250nsec Figure3-1, C L = 1000 pFPower SupplyI S Power Supply Current————4.50.4mA V IN = 3V (Both Inputs)V IN = 0V (Both Inputs)Note1:Switching times ensured by design.© 2006 Microchip Technology Inc.DS21418C-page 3TC4404/TC4405DS21418C-page 4© 2006 Microchip Technology Inc.TC4404/TC4405 ELECTRICAL SPECIFICATIONS (CONTINUED)Electrical Characteristics: Over operating temperature range with 4.5V ≤ V DD ≤ 18V, unless otherwise noted.Symbol ParameterMin Typ Max Units Test ConditionsV IH Logic 1, High Input Voltage 2.4——V V IL Logic 0, Low Input Voltage ——0.8V I IN Input Current-10—10μA0V ≤ V IN ≤ V DDOutput V OH High Output Voltage V DD – 0.025——V V OL Low Output Voltage ——0.025V R O Output Resistance—912ΩI OUT = 10 mA, V DD = 18V; Any Drain I PK Peak Output Current (Any Drain)— 1.5—A Duty cycle ≤ 2%, t ≤ 300 μsecI DC Continuous Output Current (Any Drain)——100mA I RLatch-Up Protection (Any Drain)Withstand Reverse Current —>500—mADuty cycle ≤ 2%, t ≤ 300 μsec Switching Time (Note 1)t R Rise Time ——40nsec Figure 3-1, C L = 1000 pF t F Fall Time ——40nsec Figure 3-1, C L = 1000 pF t D1Delay Time ——40nsec Figure 3-1, C L = 1000 pF t D2Delay Time——60nsec Figure 3-1, C L = 1000 pF Power SupplyI SPower Supply Current————80.6mAV IN = 3V (Both Inputs)V IN = 0V (Both Inputs)Note 1:Switching times ensured by design.TC4404/TC44052.0PIN DESCRIPTIONSThe descriptions of the pins are listed in Table2-1.TABLE 2-1:PIN FUNCTION TABLEPin No.Symbol Description(8-Pin PDIP,SOIC, CERDIP)1V DD Supply input, 4.5V to 18V.2IN A Control input A, TTL/CMOS compatible input.3IN B Control input A, TTL/CMOS compatible input.4GND Ground.5 B BOTTOM Output B, pull-down.6 B TOP Output B, pull-up.7 A BOTTOM Output A, pull-down.8 A TOP Output A, pull-up.© 2006 Microchip Technology Inc.DS21418C-page 5TC4404/TC4405DS21418C-page 6© 2006 Microchip Technology Inc.3.0APPLICATIONS INFORMATION3.1Circuit Layout GuidelinesAvoid long power supply and ground traces (added inductance causes unwanted voltage transients). Use power and ground planes wherever possible.In addition, it is advisable that low ESR bypass capac-itors (4.7 μF or 10 μF tantalum) be placed as close to the driver as possible. The driver should be physically located as close to the device it is driving as possible to minimize the length of the output trace.FIGURE 3-1:Switching Time Test Circuit3.2Typical ApplicationsFIGURE 3-2:Zero Crossover Current Totem-Pole SwitchFIGURE 3-3:Driving Bipolar TransistorsTC4404/TC4405FIGURE 3-4:Servo Motor ControlFIGURE 3-5:Reach-Up and Reach-Down Driving© 2006 Microchip Technology Inc.DS21418C-page 7TC4404/TC44054.0TYPICAL CHARACTERISTICSNote:The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed hereinare not tested or guaranteed. In some graphs or tables, the data presented may be outside the specifiedoperating range (e.g., outside specified power supply range) and therefore outside the warranted range.DS21418C-page 8© 2006 Microchip Technology Inc.TC4404/TC4405 TYPICAL CHARACTERISTICS (CONTINUED)© 2006 Microchip Technology Inc.DS21418C-page 9TC4404/TC44055.0PACKAGING INFORMATION5.1Package Marking InformationPackage marking data not available at this time.DS21418C-page 10© 2006 Microchip Technology Inc.分销商库存信息:MICROCHIPTC4405COA TC4404COA TC4405CPA TC4405EOA TC4404EOA TC4404EPA TC4405COA713TC4404COA713TC4404EOA713 TC4405EOA713TC4405EPA TC4404CPA TC4404MJA TC4405MJA。

MBR4035PT THRU MBR4060PTSCHOTTKY RECTIFIERReverse Voltage -35 to 60 Volts Forward Current - 40.0 AmperesFEATURES♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0♦ Dual rectifier construction, positive center-tap ♦ Metal silicon rectifier,majority carrier conduction ♦ Low power loss,high efficiency♦ High current capability, low forward voltage drop ♦ High surge capability♦ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications ♦ Guardring for overvoltage protection ♦ High temperature soldering guaranteed:250°C/10 seconds, 0.17" (4.3mm) from caseMECHANICAL DATACase:JEDEC TO-247AD molded plastic body Terminals:Lead solderable per MIL-STD-750,Method 2026Polarity:As marked Mounting Position:AnyMounting Torque:10 in.- lbs.max.Weight:0.2 ounce, 5.6 gramsMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSRatings at 25°C ambient temperature unless otherwise specified.SYMBOLS MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNITSMaximum repetitive peak reverse voltage V RRM 35455060Volts Maximum working peak reverse voltage V RMS 35455060Volts Maximum DC blocking voltageV DC 35455060Volts Maximum average forward rectified current at T C =125°CI (AV)40.0Amps Peak repetitive forward current per leg at T C =120°C (rated V R square wave, 20 KH Z )I FRM 40.0Amps Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)I FSM 400.0AmpsPeak repetitive reverse surge current (NOTE1)I RRM2.01.0AmpsMaximum instantaneous forward voltage per leg at I F =20A, T C =25°C0.700.72(NOTE 2)I F =20A, T C =125°C V F 0.600.62VoltsI F =40A, T C =25°C 0.80_I F =40A, T C =125°C 0.75_Maximum instantaneous reverse current at T C =25°C 1.0rated DC blocking voltage per leg (NOTE 2) T C =125°C I R 100.0mA Typical thermal resistance per leg (NOTE 3)R ΘJC 1.2°C/W Voltage rate of change (rated V R )dv/dt 10,000V/µs Operating junction temperature range T J -65 to +150°C Storage temperature rangeT STG-65 to +175°CNOTES:(1) 2.0µs pulse width, f=1.0 KH Z(2) Pulse test: 300µs pulse width, 1% duty cycle (3) Thermal resistance from junction to case per leg4/981o REF.Dimensions in inches and (millimeters)TO-247AD0.010.11101000.111010050100150010********11010010020030040000.10.20.30.40.50.60.70.80.91.01.11.20.010.1110500.11101001001,0005,000204060801000.0010.010.111050RATINGS AND CHARACTERISTIC CURVES MBR4035PT THRU MBR4060PTT J =150°CFIG. 1 - FORWARD CURRENT DERATING CURVECASE TEMPERATURE, °CA V E R A G E F O R W A R D C U R R E N T ,A M P E R E SFIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARDSURGE CURRENT PER LEGNUMBER OF CYCLES AT 60 H ZP E A K F O R W A R D S U R G E C U R R E N T ,A M P E R E SFIG. 3 - TYPICAL REVERSE CHARACTERISTICSPER LEGFIG. 4 - TYPICAL REVERSE CHARACTERISTICSPER LEGI N S T A N T A N E O U S F O R W A R D C U R R E N T , A M P E R E SI N S T A N T A N E O U S R E V E R S E C U R R E N T , M I L L I A M P E R E SINSTANTANEOUS FORWARD VOLTAGE,VOLTSPERCENT OF RATED PEAK REVERSE VOLTAGE, %FIG. 5 - TYPICAL JUNCTION CAPACITANCE PER LEGJ U N C T I O N C A P A C I T A N C E , p FREVERSE VOLTAGE, VOLTST J =T J max.8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)RESISTIVE OR INDUCTIVE LOADT J =75°CT J =25°CT J =25°CPULSE WIDTH=300µs 1%DUTY CYCLET J =125°CFIG . 6 - TYPICAL TRANSIENT THERMAL IMPEDANCEPER LEGt, PULSE DURATION, sec.T R A N S I E N T T H E R M A L I M P E D A N C E , °C /WMBR4035PT - MBR4045PT MBR4050PT & MBR4060PTMBR4035PT - MBR4045PT MBR4050PT & MBR4060PTMBR4035PT - MBR4045PT MBR4050PT & MBR4060PTT J =25°C f=1.0 MHz Vsig=50mVp-p。