PS2562L1-4-V中文资料

DATA SHEETThe information in this document is subject to change without notice.©1992Document No. P12989EJ4V0DS00 (4th edition)(Previous No. LC-2225)Date Published August 1997 NS Printed in JapanPHOTOCOUPLERPS2561-1,-2, PS2561L-1,-2HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIESThe mark shows major revised points.DESCRIPTIONThe PS2561-1, -2 and PS2561L-1, -2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor.PS2561-1, -2 are in a plastic DIP (Dual In-line Package) and PS2561L-1, -2 are lead bending type (Gull-wing) for surface mount.FEATURES•High isolation voltageBV = 5 000 Vr.m.s.: standard productsBV = 3 750 Vr.m.s.: VDE0884 approved products (Option)•High collector to emitter voltage (V CEO = 80 V)•High current transfer ratio (CTR = 200 % TYP.)•High-speed switching (t r = 3 µs TYP., t f = 5 µs TYP.)•UL approved (File No. E72422 (S) )•CSA approved (No. CA 101391)•BSI approved (BS415, BS7002) No. 7112•SEMKO approved (SS4410165) No. 9317144•NEMKO approved (NEK-HD 195S6) No. A21409•DEMKO approved (Section 101, 137) No. 300535•FIMKO approved (E69-89) No. 167265-08•VDE0884 approved (Option)APPLICATIONS•Power supply •Telephone/FAX.•FA/OA equipment•Programmable logic controller2PACKAGE DIMENSIONS (in millimeters)DIP Type5.1 MAX.6.53.8M A X .4.55M A X .2.8M I N .0.652.547.620.50 ± 0.100.25M4312PS2561-1 (New Package)10.2 MAX.1.25±0.156.53.8M A X .4.55M A X .2.8M I N .0.652.547.620.50 ± 0.100.25M871265340 to 15˚PS2561-20 to 15˚PS2561-14.6 ± 0.351.25±0.156.53.8M A X .4.55M A X .2.8M I N .0.650.50 ± 0.100.25M0 to 15˚7.622.5443121.25±0.15PS2561L1-15.1 MAX.6.53.8M A X .4.25M A X .2.8M I N .0.352.547.620.50 ± 0.100.25M0 to 15˚43121.25±0.1510.161. Anode 2. Cathode 3. Emitter 4. Collector 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector1. Anode2. Cathode3. Emitter4. Collector 1. Anode 2. Cathode 3. Emitter 4. Collector Caution New package 1ch only3Lead Bending Type5.1 MAX.6.53.8M A X .2.547.620.25M4312PS2561L-1 (New Package)10.2 MAX.1.25±0.156.53.8M A X .2.547.6287126534PS2561L-2PS2561L-14.6 ± 0.351.25±0.156.53.8M A X .0.25M7.622.5443121.25±0.150.05 t o 0.29.60 ± 0.40.90 ± 0.250.05 t o 0.29.60 ± 0.40.90 ± 0.250.25M0.05 t o 0.29.60 ± 0.40.90 ± 0.255.1 MAX.6.53.8M A X .2.547.620.25MPS2561L2-143121.25±0.150.05 t o 0.210.160.9 ± 0.2512.0 MAX.1. Anode2. Cathode3. Emitter4. Collector1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 1. Anode 2. Cathode 3. Emitter 4. Collector 1. Anode 2. Cathode 3. Emitter 4. Collector Caution New package 1ch only4ORDERING INFORMATIONPart NumberPackageSafety Standard ApprovalApplication partnumber *1PS2561-1PS2561L-1PS2561L1-1PS2561L2-14-pin DIP4-pin DIP (lead bending surface mount)4-pin DIP (for long distance)4-pin DIP (for long distance surfacemount)Standard products PS2561-1PS2561-2PS2561L-28-pin DIP8-pin DIP (lead bending surface mount)PS2561-2PS2561-1-V PS2561L-1-V PS2561L1-1-V PS2561L2-1-V 4-pin DIP4-pin DIP (lead bending surface mount)4-pin DIP (for long distance)4-pin DIP (for long distance surfacemount)VDE0884 approved products (Option)PS2561-1PS2561-2-V PS2561L-2-V8-pin DIP8-pin DIP (lead bending surface mount)PS2561-2*1 As applying to Safety Standard, following part number should be used.ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise specified)ParameterSymbolRatingsUnitPS2561-1,PS2561L-1PS2561-2,PS2561L-2DiodeReverse Voltage V R 6V Forward Current (DC)I F80mAPower Dissipation Derating ∆P D /°C 1.5 1.2mW/°C Power Dissipation P D 150120mW/ch Peak Forward Current*1I FP 1A TransistorCollector to Emitter Voltage V CEO 80V Emitter to Collector Voltage V ECO 7V Collector CurrentI C50mA/chPower Dissipation Derating ∆P C /°C 1.5 1.2mW/°C Power DissipationP C 150120mW/ch Isolation Voltage*2BV5 0003 750*3Vr.m.s.Operating Ambient Temperature T A –55 to +100°C Storage TemperatureT stg–55 to +150°C*1PW = 100 µs, Duty Cycle = 1 %*2AC voltage for 1 minute at T A = 25 °C, RH = 60 % between input and output *3VDE0884 approved products (Option)•UL approved •CSA approved •BSI approved•NEMKO approved •DEMKO approved •SEMKO approved•FIMKO approved5ELECTRICAL CHARACTERISTICS (T A = 25 °C)ParameterSymbol Conditions MIN.TYP.MAX.Unit DiodeForward Voltage V F I F = 10 mA 1.171.4VReverse Current I R V R = 5 V5µA Terminal CapacitanceC t V = 0 V, f = 1.0 MHz 50pFTransistorCollector to Emitter Dark CurrentI CEOV CE = 80 V, I F = 0 mA100nACoupled Current Transfer Ratio *1CTR I F = 5 mA, V CE = 5 V 80200400%Collector Saturation VoltageV CE (sat)I F = 10 mA, I C = 2 mA0.3V Isolation Resistance R I-O V I-O = 1.0 kV 1011ΩIsolation Capacitance C I-O V = 0 V, f = 1.0 MHz0.5pFRise Time *2t r V CC = 10 V, I C = 2 mA, R L = 100 Ω3µsFall Time*2t f5*1CTR rank (only PS2561-1, PS2561L-1)*2Test circuit for switching timeL: 200 to 400 (%)M : 80 to 240 (%)D : 100 to 300 (%)H : 80 to 160 (%)W : 130 to 260 (%)V CCV OUTR L = 100 Ω50 ΩI F µPulse InputPW = 100 sDuty Cycle = 1/106TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise specified)150100500255075100125150 1.5 mW/˚C1.2 mW/˚C15010050255075100125150010 0001001 000100101755025–25–50V CE = 80 V10 1.00.80.60.40.20510.50.110 m A401.5 mW/˚C1.2 mW/˚C20 m A 50 m A 2 m AI F = 1 mA5 m A 70260504030201004681020 m A I F = 5 mA10m A 50 m A 40 V 24 V 10 V 5 VPS2561-1PS2561L-1PS2561-2PS2561L-2PS2561-1PS2561L-1PS2561-2PS2561L-2100 1.51.41.31.21.11.00.90.80.75010510.50.10 ˚C –25 ˚C –55 ˚C+60 ˚C +25 ˚CT A = +100 ˚CD i o d e P o w e r D i s s i p a t i o n P D (m W )T r a n s i s t o r P o w e r D i s s i p a t i o n P C (m W )Ambient Temperature T A (˚C)F o r w a r d C u r r e n t I F (m A )Forward Voltage V F (V)C o l l e c t o r C u r r e n t I C (m A )Collector to Emitter Voltage V CE (V)C o l l e c t o r t o E m i t t e rD a r k C u r r e n t I CE O (n A )Collector Saturation Voltage V CE(sat) (V)Ambient Temperature T A (˚C)Ambient Temperature T A (˚C)DIODE POWER DISSIPATION vs.AMBIENT TEMPERATURETRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATUREFORWARD CURRENT vs.FORWARD VOLTAGECOLLECTOR CURRENT vs.COLLECTOR TO EMITTER VOLTAGECOLLECTOR TO EMITTER DARKCURRENT vs. AMBIENT TEMPERATURECOLLECTOR CURRENT vs.COLLECTOR SATURATION VOLTAGEC o l l e c t o r C u r r e n t I C (m A )7PS2561-1,-2,PS2561L-1,-21.2–501.00.80.60.40.20–252550751004504003503002502001501005000.050.10.5151050501010.110 k5 k 1 k50010050101 000100101100 k50 k 10 k5 k 1 k5001000–5–10–15–200.5125102050100200500I C = 2 mA,V CC = 10 V,CTR = 290 %t f t rt dt sI F = 5 mA,V CC = 5 V,CTR = 290 %t st dt rt fI F = 5 mA,V CE = 5 V100 Ω300 ΩR L = 1 k ΩI F = 5 mA T A = 25 ˚CI F = 5 mA T A = 60 ˚C 1.21.00.80.60.40.2102103104105Normalized to 1.0at T A = 25 ˚C,I F = 5 mA, V CE = 5 VForward Current I F (mA)Ambient Temperature T A (˚C)Load Resistance R L (Ω)Frequency f (kHz)N o r m a l i z e d C u r r e n t T r a n s f e r R a t i o C T RC u r r e n t T r a n s f e r R a t i o C T R (%)N o r m a l i z e d G a i n G VLoad Resistance R L (Ω)S w i t c h i n g T i m e t ( s )µNORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURECURRENT TRANSFER RATIO vs.FORWARD CURRENTSWITCHING TIME vs.LOAD RESISTANCESWITCHING TIME vs.LOAD RESISTANCEFREQUENCY RESPONSELONG TIME CTR DEGRADATIONS w i t c h i n g T i m e t ( s )µTYP.Time (Hr)C T R (R e l a t i v e V a l u e )8TAPING SPECIFICATIONS (in millimeters)Taping DirectionPS2561L-1-E3PS2561L-1-F3PS2561L-1-E4PS2561L-1-F4Outline and Dimensions (Tape)1.55±0.12.0±0.14.0±0.11.55±0.11.75±0.14.3±0.210.3±0.10.37.5±0.116.0±0.35.6±0.18.0±0.1Outline and Dimensions (Reel)Packing: PS2561L-1-E3, E4 1 000 pcs/reel2.0±0.5R 1.013.0±0.5φ21.0±0.8φ16.4+2.0–0.0P S 2561L -1-E 3, E 4: 250P S 2561L -1-F 3, F 4: 330φ80.0±5.0φφPS2561L-1-F3, F4 2 000 pcs/reel9Taping DirectionPS2561L-2-E3PS2561L-2-E4Outline and Dimensions (Tape)1.55±0.12.0±0.14.0±0.11.55±0.11.75±0.14.3±0.210.3±0.10.37.5±0.116.0±0.310.4±0.112.0±0.1Outline and Dimensions (Reel)Packing: 1 000 pcs/reel16.4+2.0–0.080.0±5.0φ330φ2.0±0.5R 1.013.0±0.5φ21.0±0.8φ10RECOMMENDED SOLDERING CONDITIONS(1) Infrared reflow soldering • Peak reflow temperature235 °C (package surface temperature)• Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three• FluxRosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)60 to 90 s (preheating)210 ˚C120 to 160 ˚CP a c k a g e S u r f a c e T e m p e r a t u r e T (˚C )Time (s)(heating)to 10 sto 30 s235 ˚C (peak temperature)Recommended Temperature Profile of Infrared ReflowPeak temperature 235 ˚C or belowCaution Please avoid to removed the residual flux by water after the first reflow processes.(2) Dip soldering • Temperature 260 °C or below (molten solder temperature)• Time10 seconds or less • Number of times One• FluxRosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)11SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)ParameterSymbolSpeckUnitApplication classification (DIN VDE 0109)for rated line voltages ≤ 300 Vr.m.s.for rated line voltages ≤ 600 Vr.m.s.IV III Climatic test class (DIN IEC 68 Teil 1/09.80)55/100/21Dielectric strength maximum operating isolation voltageTest voltage (partial discharge test procedure a for type test and random test)U pr = 1.2 × U IORM , P d < 5 pCU IORM U pr 8901 068V peak V peakTest voltage (partial discharge test procedure b for random test)U pr = 1.6 × U IORM , P d < 5 pC U pr 1 424V peakHighest permissible overvoltage U TR 6 000V peakDegree of pollution (DIN VDE 0109)2Clearance distance > 7.0mm Creepage distance> 7.0mmComparative tracking index (DIN IEC 112/VDE 0303 part 1)CTI 175Material group (DIN VDE 0109)III a Storage temperature range T stg –55 to +150°C Operating temperature rangeT A –55 to +100°C Isolation resistance, minimum value V IO = 500 V dc at T A = 25 °CV IO = 500 V dc at T A MAX. at least 100 °CRis MIN.Ris MIN.10121011ΩΩSafety maximum ratings (maximum permissible in case of fault, see thermal derating curve)Package temperatureCurrent (input current I F , Psi = 0)Power (output or total power dissipation)Isolation resistanceV IO = 500 V dc at T A = 175 °C (Tsi)Tsi Isi Psi Ris MIN.175********9°C mA mW ΩCAUTIONWithin this device there exists GaAs (Gallium Arsenide) material which is aharmful substance if ingested. Please do not under any circumstances break thehermetic seal.No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.NEC devices are classified into the following three quality grades:"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronicequipment and industrial robotsSpecial: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.Anti-radioactive design is not implemented in this product.M4 96. 5。

数据手册 富士通PRIMERGY RX2530 M4两路1U 机架式服务器数据手册富士通PRIMERGY RX2530 M4 两路1U 机架式服务器在1U 外壳中实现最大生产率富士通PRIMERGY 服务器将为您提供应对任何工作负载以及不断变化的业务要求所需的服务器。

随着业务过程的扩张，对于应用的需求也不断提高。

每个业务过程都有各自的资源足迹，因此您需要寻求一种方式优化计算，以便更好地服务用户。

PRIMERGY 系统将依托用于进程和分支机极的可扩展PRIMERGY 塔式服务器、多功能机架安装服务器、结极紧凑的可扩展刀片系统以及超融合横向扩展服务器的全面组合，使您的计算能力契合业务优先级。

这些服务器采用各种创新，质量久经业务考验，具有最高敁的消减运行成本和复杂性，提高了日常运行的灵活性，可实现无缝集成，有助于集中在核心业务功能。

富士通PRIMERGY RX 机架式服务器作为机架优化的灵活服务器，具有一流的性能和能敁，从而成为各数据中心的“标准”。

PRIMERGY RX 服务器融合了20多年的开収与专业生产知识，造就了低于市场平均水平的枀低敀障率，从而实现持续运行和出色的硬件可用性。

PRIMERGY RX2530 M4富士通PRIMERGY RX2530 M4服务器是一款在节省空间的1U 外壳中提供高性能、可扩展性和能源敁率的机架式服务器。

PRIMERGY RX2530 M4采用最多28核的全新英特尔® 至强®处理器可扩展系列以及最新DDR4内存技术，性能强大，非常适于虚拟化、横向扩展场景、小型数据库以及高性能计算。

此外，RX2530 M4支持高达3,072 GB 主内存，具有强大的可扩展性，幵且支持M.2设备和最新iRMC S5，可适应未来需求，提供下一代服务器管理功能。

自2018年年中开始，将支持NV-DIMM 。

最多10个磁盘和可选的4个高速PCIe SSD 提供灵活的存储配置选择。