PS2566L1-4-V-A中文资料

DATA SHEETThe information in this document is subject to change without notice.©1992Document No. P12989EJ4V0DS00 (4th edition)(Previous No. LC-2225)Date Published August 1997 NS Printed in JapanPHOTOCOUPLERPS2561-1,-2, PS2561L-1,-2HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIESThe mark shows major revised points.DESCRIPTIONThe PS2561-1, -2 and PS2561L-1, -2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor.PS2561-1, -2 are in a plastic DIP (Dual In-line Package) and PS2561L-1, -2 are lead bending type (Gull-wing) for surface mount.FEATURES•High isolation voltageBV = 5 000 Vr.m.s.: standard productsBV = 3 750 Vr.m.s.: VDE0884 approved products (Option)•High collector to emitter voltage (V CEO = 80 V)•High current transfer ratio (CTR = 200 % TYP.)•High-speed switching (t r = 3 µs TYP., t f = 5 µs TYP.)•UL approved (File No. E72422 (S) )•CSA approved (No. CA 101391)•BSI approved (BS415, BS7002) No. 7112•SEMKO approved (SS4410165) No. 9317144•NEMKO approved (NEK-HD 195S6) No. A21409•DEMKO approved (Section 101, 137) No. 300535•FIMKO approved (E69-89) No. 167265-08•VDE0884 approved (Option)APPLICATIONS•Power supply •Telephone/FAX.•FA/OA equipment•Programmable logic controller2PACKAGE DIMENSIONS (in millimeters)DIP Type5.1 MAX.6.53.8M A X .4.55M A X .2.8M I N .0.652.547.620.50 ± 0.100.25M4312PS2561-1 (New Package)10.2 MAX.1.25±0.156.53.8M A X .4.55M A X .2.8M I N .0.652.547.620.50 ± 0.100.25M871265340 to 15˚PS2561-20 to 15˚PS2561-14.6 ± 0.351.25±0.156.53.8M A X .4.55M A X .2.8M I N .0.650.50 ± 0.100.25M0 to 15˚7.622.5443121.25±0.15PS2561L1-15.1 MAX.6.53.8M A X .4.25M A X .2.8M I N .0.352.547.620.50 ± 0.100.25M0 to 15˚43121.25±0.1510.161. Anode 2. Cathode 3. Emitter 4. Collector 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector1. Anode2. Cathode3. Emitter4. Collector 1. Anode 2. Cathode 3. Emitter 4. Collector Caution New package 1ch only3Lead Bending Type5.1 MAX.6.53.8M A X .2.547.620.25M4312PS2561L-1 (New Package)10.2 MAX.1.25±0.156.53.8M A X .2.547.6287126534PS2561L-2PS2561L-14.6 ± 0.351.25±0.156.53.8M A X .0.25M7.622.5443121.25±0.150.05 t o 0.29.60 ± 0.40.90 ± 0.250.05 t o 0.29.60 ± 0.40.90 ± 0.250.25M0.05 t o 0.29.60 ± 0.40.90 ± 0.255.1 MAX.6.53.8M A X .2.547.620.25MPS2561L2-143121.25±0.150.05 t o 0.210.160.9 ± 0.2512.0 MAX.1. Anode2. Cathode3. Emitter4. Collector1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 1. Anode 2. Cathode 3. Emitter 4. Collector 1. Anode 2. Cathode 3. Emitter 4. Collector Caution New package 1ch only4ORDERING INFORMATIONPart NumberPackageSafety Standard ApprovalApplication partnumber *1PS2561-1PS2561L-1PS2561L1-1PS2561L2-14-pin DIP4-pin DIP (lead bending surface mount)4-pin DIP (for long distance)4-pin DIP (for long distance surfacemount)Standard products PS2561-1PS2561-2PS2561L-28-pin DIP8-pin DIP (lead bending surface mount)PS2561-2PS2561-1-V PS2561L-1-V PS2561L1-1-V PS2561L2-1-V 4-pin DIP4-pin DIP (lead bending surface mount)4-pin DIP (for long distance)4-pin DIP (for long distance surfacemount)VDE0884 approved products (Option)PS2561-1PS2561-2-V PS2561L-2-V8-pin DIP8-pin DIP (lead bending surface mount)PS2561-2*1 As applying to Safety Standard, following part number should be used.ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise specified)ParameterSymbolRatingsUnitPS2561-1,PS2561L-1PS2561-2,PS2561L-2DiodeReverse Voltage V R 6V Forward Current (DC)I F80mAPower Dissipation Derating ∆P D /°C 1.5 1.2mW/°C Power Dissipation P D 150120mW/ch Peak Forward Current*1I FP 1A TransistorCollector to Emitter Voltage V CEO 80V Emitter to Collector Voltage V ECO 7V Collector CurrentI C50mA/chPower Dissipation Derating ∆P C /°C 1.5 1.2mW/°C Power DissipationP C 150120mW/ch Isolation Voltage*2BV5 0003 750*3Vr.m.s.Operating Ambient Temperature T A –55 to +100°C Storage TemperatureT stg–55 to +150°C*1PW = 100 µs, Duty Cycle = 1 %*2AC voltage for 1 minute at T A = 25 °C, RH = 60 % between input and output *3VDE0884 approved products (Option)•UL approved •CSA approved •BSI approved•NEMKO approved •DEMKO approved •SEMKO approved•FIMKO approved5ELECTRICAL CHARACTERISTICS (T A = 25 °C)ParameterSymbol Conditions MIN.TYP.MAX.Unit DiodeForward Voltage V F I F = 10 mA 1.171.4VReverse Current I R V R = 5 V5µA Terminal CapacitanceC t V = 0 V, f = 1.0 MHz 50pFTransistorCollector to Emitter Dark CurrentI CEOV CE = 80 V, I F = 0 mA100nACoupled Current Transfer Ratio *1CTR I F = 5 mA, V CE = 5 V 80200400%Collector Saturation VoltageV CE (sat)I F = 10 mA, I C = 2 mA0.3V Isolation Resistance R I-O V I-O = 1.0 kV 1011ΩIsolation Capacitance C I-O V = 0 V, f = 1.0 MHz0.5pFRise Time *2t r V CC = 10 V, I C = 2 mA, R L = 100 Ω3µsFall Time*2t f5*1CTR rank (only PS2561-1, PS2561L-1)*2Test circuit for switching timeL: 200 to 400 (%)M : 80 to 240 (%)D : 100 to 300 (%)H : 80 to 160 (%)W : 130 to 260 (%)V CCV OUTR L = 100 Ω50 ΩI F µPulse InputPW = 100 sDuty Cycle = 1/106TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise specified)150100500255075100125150 1.5 mW/˚C1.2 mW/˚C15010050255075100125150010 0001001 000100101755025–25–50V CE = 80 V10 1.00.80.60.40.20510.50.110 m A401.5 mW/˚C1.2 mW/˚C20 m A 50 m A 2 m AI F = 1 mA5 m A 70260504030201004681020 m A I F = 5 mA10m A 50 m A 40 V 24 V 10 V 5 VPS2561-1PS2561L-1PS2561-2PS2561L-2PS2561-1PS2561L-1PS2561-2PS2561L-2100 1.51.41.31.21.11.00.90.80.75010510.50.10 ˚C –25 ˚C –55 ˚C+60 ˚C +25 ˚CT A = +100 ˚CD i o d e P o w e r D i s s i p a t i o n P D (m W )T r a n s i s t o r P o w e r D i s s i p a t i o n P C (m W )Ambient Temperature T A (˚C)F o r w a r d C u r r e n t I F (m A )Forward Voltage V F (V)C o l l e c t o r C u r r e n t I C (m A )Collector to Emitter Voltage V CE (V)C o l l e c t o r t o E m i t t e rD a r k C u r r e n t I CE O (n A )Collector Saturation Voltage V CE(sat) (V)Ambient Temperature T A (˚C)Ambient Temperature T A (˚C)DIODE POWER DISSIPATION vs.AMBIENT TEMPERATURETRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATUREFORWARD CURRENT vs.FORWARD VOLTAGECOLLECTOR CURRENT vs.COLLECTOR TO EMITTER VOLTAGECOLLECTOR TO EMITTER DARKCURRENT vs. AMBIENT TEMPERATURECOLLECTOR CURRENT vs.COLLECTOR SATURATION VOLTAGEC o l l e c t o r C u r r e n t I C (m A )7PS2561-1,-2,PS2561L-1,-21.2–501.00.80.60.40.20–252550751004504003503002502001501005000.050.10.5151050501010.110 k5 k 1 k50010050101 000100101100 k50 k 10 k5 k 1 k5001000–5–10–15–200.5125102050100200500I C = 2 mA,V CC = 10 V,CTR = 290 %t f t rt dt sI F = 5 mA,V CC = 5 V,CTR = 290 %t st dt rt fI F = 5 mA,V CE = 5 V100 Ω300 ΩR L = 1 k ΩI F = 5 mA T A = 25 ˚CI F = 5 mA T A = 60 ˚C 1.21.00.80.60.40.2102103104105Normalized to 1.0at T A = 25 ˚C,I F = 5 mA, V CE = 5 VForward Current I F (mA)Ambient Temperature T A (˚C)Load Resistance R L (Ω)Frequency f (kHz)N o r m a l i z e d C u r r e n t T r a n s f e r R a t i o C T RC u r r e n t T r a n s f e r R a t i o C T R (%)N o r m a l i z e d G a i n G VLoad Resistance R L (Ω)S w i t c h i n g T i m e t ( s )µNORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURECURRENT TRANSFER RATIO vs.FORWARD CURRENTSWITCHING TIME vs.LOAD RESISTANCESWITCHING TIME vs.LOAD RESISTANCEFREQUENCY RESPONSELONG TIME CTR DEGRADATIONS w i t c h i n g T i m e t ( s )µTYP.Time (Hr)C T R (R e l a t i v e V a l u e )8TAPING SPECIFICATIONS (in millimeters)Taping DirectionPS2561L-1-E3PS2561L-1-F3PS2561L-1-E4PS2561L-1-F4Outline and Dimensions (Tape)1.55±0.12.0±0.14.0±0.11.55±0.11.75±0.14.3±0.210.3±0.10.37.5±0.116.0±0.35.6±0.18.0±0.1Outline and Dimensions (Reel)Packing: PS2561L-1-E3, E4 1 000 pcs/reel2.0±0.5R 1.013.0±0.5φ21.0±0.8φ16.4+2.0–0.0P S 2561L -1-E 3, E 4: 250P S 2561L -1-F 3, F 4: 330φ80.0±5.0φφPS2561L-1-F3, F4 2 000 pcs/reel9Taping DirectionPS2561L-2-E3PS2561L-2-E4Outline and Dimensions (Tape)1.55±0.12.0±0.14.0±0.11.55±0.11.75±0.14.3±0.210.3±0.10.37.5±0.116.0±0.310.4±0.112.0±0.1Outline and Dimensions (Reel)Packing: 1 000 pcs/reel16.4+2.0–0.080.0±5.0φ330φ2.0±0.5R 1.013.0±0.5φ21.0±0.8φ10RECOMMENDED SOLDERING CONDITIONS(1) Infrared reflow soldering • Peak reflow temperature235 °C (package surface temperature)• Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three• FluxRosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)60 to 90 s (preheating)210 ˚C120 to 160 ˚CP a c k a g e S u r f a c e T e m p e r a t u r e T (˚C )Time (s)(heating)to 10 sto 30 s235 ˚C (peak temperature)Recommended Temperature Profile of Infrared ReflowPeak temperature 235 ˚C or belowCaution Please avoid to removed the residual flux by water after the first reflow processes.(2) Dip soldering • Temperature 260 °C or below (molten solder temperature)• Time10 seconds or less • Number of times One• FluxRosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)11SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)ParameterSymbolSpeckUnitApplication classification (DIN VDE 0109)for rated line voltages ≤ 300 Vr.m.s.for rated line voltages ≤ 600 Vr.m.s.IV III Climatic test class (DIN IEC 68 Teil 1/09.80)55/100/21Dielectric strength maximum operating isolation voltageTest voltage (partial discharge test procedure a for type test and random test)U pr = 1.2 × U IORM , P d < 5 pCU IORM U pr 8901 068V peak V peakTest voltage (partial discharge test procedure b for random test)U pr = 1.6 × U IORM , P d < 5 pC U pr 1 424V peakHighest permissible overvoltage U TR 6 000V peakDegree of pollution (DIN VDE 0109)2Clearance distance > 7.0mm Creepage distance> 7.0mmComparative tracking index (DIN IEC 112/VDE 0303 part 1)CTI 175Material group (DIN VDE 0109)III a Storage temperature range T stg –55 to +150°C Operating temperature rangeT A –55 to +100°C Isolation resistance, minimum value V IO = 500 V dc at T A = 25 °CV IO = 500 V dc at T A MAX. at least 100 °CRis MIN.Ris MIN.10121011ΩΩSafety maximum ratings (maximum permissible in case of fault, see thermal derating curve)Package temperatureCurrent (input current I F , Psi = 0)Power (output or total power dissipation)Isolation resistanceV IO = 500 V dc at T A = 175 °C (Tsi)Tsi Isi Psi Ris MIN.175********9°C mA mW ΩCAUTIONWithin this device there exists GaAs (Gallium Arsenide) material which is aharmful substance if ingested. Please do not under any circumstances break thehermetic seal.No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.NEC devices are classified into the following three quality grades:"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronicequipment and industrial robotsSpecial: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.Anti-radioactive design is not implemented in this product.M4 96. 5。

2003, 2008The mark <R> shows major revised points.The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.DESCRIPTIONThe PS2561A-1 is an optically coupled isolator containing a G aAs light emitting diode and an NPN silicon phototransistor to realize an excellent cost performance.The PS2561A-1 is in a plastic DIP (Dual In-line Package) and the PS2561AL-1 is lead bending type (Gull-wing) for surface mount.The PS2561AL1-1 is lead bending L1 type and the PS2561AL2-1 is lead bending L2 type (Gull-wing).FEATURES• High isolation voltage (BV = 5 000 Vr.m.s.)• Ordering number of taping product: PS2561AL-1-E3, E4, F3, F4: PS2561AL2-1-E3, E4• Pb-Free product• Safety standards • UL approved: No. E72422 • CSA approved: No. CA 101391 • BSI approved: No. 7112, 7420 • SEMKO approved: No. 607784 • NEMKO approved: No. P0******* • DEMKO approved: No. 312032 • FIMKO approved: No. FI 22778• DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (Option)APPLICATIONS• Power supply • Telephone/FAX. • FA/OA equipment• Programmable logic controller<R>DATA SHEETThe information in this document is subject to change without notice. Before using this document, pleaseconfirm that this is the latest version.Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.Document No. PN10222EJ05V0DS (5th edition)Date Published September 2008 NS Printed in JapanPACKAGE DIMENSIONS (UNIT : mm)DistanceCreepage Type LongDIPLead Bending Type (Gull-Wing) Long Creepage Distance (Gull-Wing)2Data Sheet PN10222EJ05V0DSMARKING EXAMPLE<R>Data Sheet PN10222EJ05V0DS3ORDERING INFORMATIONPart Number Order Number Solder PlatingSpecification Packing Style Safety StandardApprovalApplication PartNumber *1PS2561A-1 PS2561A-1-A Pb-Free Magazine case 100 pcs Standard products PS2561A-1 PS2561AL-1 PS2561AL-1-A (UL,CSA,BSI,PS2561AL1-1 PS2561AL1-1-A NEMKO,DEMKO,PS2561AL2-1 PS2561AL2-1-A SEMKO,FIMKOPS2561AL-1-E3 PS2561AL-1-E3-A Embossed Tape 1 000 pcs/reel approved)PS2561AL-1-E4 PS2561AL-1-E4-APS2561AL2-1-E3 PS2561AL2-1-E3-A Embossed Tape 1 000 pcs/reelPS2561AL2-1-E4 PS2561AL2-1-E4-APS2561AL-1-F3 PS2561AL-1-F3-A Embossed Tape 2 000 pcs/reelPS2561AL-1-F4 PS2561AL-1-F4-APS2561A-1-V PS2561A-1-V-A Magazine case 100 pcs DIN EN60747-5-2PS2561AL-1-V PS2561AL-1-V-A (VDE0884Part2)PS2561AL1-1-V PS2561AL1-1-V-A Approved(option)PS2561AL2-1-V PS2561AL2-1-V-APS2561AL-1-V-E3 PS2561AL-1-V-E3-A Embossed Tape 1 000 pcs/reelPS2561AL-1-V-E4 PS2561AL-1-V-E4-APS2561AL2-1-V-E3 PS2561AL2-1-V-E3-A Embossed Tape 1 000 pcs/reelPS2561AL2-1-V-E4 PS2561AL2-1-V-E4-APS2561AL-1-V-F3 PS2561AL-1-V-F3-A Embossed Tape 2 000 pcs/reelPS2561AL-1-V-F4 PS2561AL-1-V-F4-A*1 For the application of the Safety Standard, following part number should be used.Data Sheet PN10222EJ05V0DS4ABSOLUTE MAXIMUM RATINGS (T A = 25°C, unless otherwise specified)Ratings UnitParameter SymbolVoltage V R 6 VDiode Reverse(DC) I F 30 mAForwardCurrentPower Dissipation Derating ΔP D/°C 1.5 mW/°CDissipation P D 150 mWPowerPeak Forward Current*1I FP 0.5 ATransistor Collector to Emitter Voltage V CEO 70 VEmitter to Collector Voltage V ECO 5 VCurrent I C 30 mACollectorPower Dissipation Delay ΔP C/°C 1.5 mW/°CPowerDissipation P C 150 mWVr.m.s.0005Isolation Voltage*2 BVOperating Ambient Temperature T A−55 to +100 °CStorage Temperature T stg−55 to +150 °C*1PW = 100 μs, Duty Cycle = 1%*2AC voltage for 1 minute at T A = 25°C, RH = 60% between input and outputPins 1-2 shorted together, 3-4 shorted together.Data Sheet PN10222EJ05V0DS 5ELECTRICAL CHARACTERISTICS (T A = 25°C)Parameter Symbol Conditions MIN. TYP. MAX. UnitDiode Forward VoltageV FI F = 10 mA 1.2 1.4 VReverse Current I R V R = 5 V5 μATerminal Capacitance C t V = 0 V, f = 1.0 MHz 10 pFTransistor Collector to Emitter DarkCurrentI CEOV CE = 70 V, I F= 0 mA100nACoupled Current Transfer Ratio (I C /I F )*1CTR I F = 5 mA, V CE = 5 V50 400 %Collector Saturation Voltage V CE (sat) I F = 10 mA, I C = 2 mA0.13 0.3 VIsolation Resistance R I-O V I-O = 1.0 kV DC 1011Ω Isolation Capacitance C I-O V = 0 V, f = 1.0 MHz0.4pFRise Time *2t r V CC = 10 V, I C = 2 mA, R L = 100 Ω 5 μsFall Time *2t f7*1 CTR rank N : 50 to 300 (%) H : 80 to 160 (%) Q : 100 to 200 (%)W : 130 to 260 (%) L : 200 to 400 (%)*2 Test circuit for switching timeV CCV OUTInputOutput<R><R> <R>Data Sheet PN10222EJ05V0DS6TYPICAL CHARACTERISTICS (T A = 25°C, unless otherwise specified)2001501005002550751001251.5 mW/˚CD i o d e P o w e r D i s s i p a t i o n P D (m W )Ambient Temperature T A (˚C)DIODE POWER DISSIPATION vs.AMBIENT TEMPERATURE2001501005002550751001251.5 mW/˚CT r a n s i s t o r P o w e r D i s s i p a t i o n P C (m W )Ambient Temperature T A (˚C)TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE1F o r w a r d C u r r e n t I F (m A )Forward Voltage V F (V)FORWARD CURRENT vs.FORWARD VOLTAGEC o l l e c t o r C u r r e n t I C (m A )Collector to Emitter Voltage V CE (V)COLLECTOR CURRENT vs.COLLECTOR TO EMITTER VOLTAGEC o l l e c t o r t o E m i t t e rD a r k C u r r e n t I CE O (n A )Ambient Temperature T A (˚C)COLLECTOR TO EMITTER DARKCURRENT vs. AMBIENT TEMPERATURECollector Saturation Voltage V CE(sat) (V)COLLECTOR CURRENT vs.COLLECTOR SATURATION VOLTAGEC o l l e c t o r C u r r en t I C (m A)Remark The graphs indicate nominal characteristics.Data Sheet PN10222EJ05V0DS7Ambient Temperature T A (˚C)N o r m a l i z e d C u r r e n t T r a n s f e r R a t i o C T RNORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURELoad Resistance R L (Ω)S w i t c h i n g T i m e t( s )μSWITCHING TIME vs.LOAD RESISTANCE0.111010010100 1 00010 000t ft rt dt sI C = 2 mA, V CC = 10 V,CTR = 216%Frequency f (kHz)N o r m a l i z e d G a i n G VFREQUENCY RESPONSE–––––Load Resistance R L (k Ω)SWITCHING TIME vs.LOAD RESISTANCES w i t c h i n g T i m e t ( s )μTime (Hr)C T R (R e l a t i v e V a l u e )LONG TERM CTR DEGRADATIONForward Current I F (mA)C u r r e n t T r a n s f e r R a t i o C T R (%)CURRENT TRANSFER RATIO vs.FORWARD CURRENTRemark The graphs indicate nominal characteristics.Data Sheet PN10222EJ05V0DS8TAPING SPECIFICATIONS (UNIT : mm)Data Sheet PN10222EJ05V0DS 9Data Sheet PN10222EJ05V0DS10Data Sheet PN10222EJ05V0DS 11NOTES ON HANDLING1. Recommended soldering conditions(1) Infrared reflow soldering • Peak reflow temperature 260°C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s• Number of reflows Three• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.)P a c k a g e S u r f a c e T e m p e r a t u r e T (˚C)Time (s)Recommended Temperature Profile of Infrared Reflow(2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time10 seconds or less• Preheating conditions 120°C or below (package surface temperature)• Number of times One (Allowed to be dipped in solder including plastic mold portion.)• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.)(3) Soldering by soldering iron• Peak temperature (lead part temperature) 350°C or below • Time (each pins)3 seconds or less• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.)(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead. (b) Please be sure that the temperature of the package would not be heated over 100°C.Data Sheet PN10222EJ05V0DS12(4) Cautions• FluxesAvoid removing the residual flux with freon-based and chlorine-based cleaning solvent.2. Cautions regarding noiseBe aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings.3. Measurement conditions of current transfer ratios (CTR), which differ according to photocouplerCheck the setting values before use, since the forward current conditions at CTR measurement differ according to product.When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. This tendency may sometimes be obvious, especially below I F = 1 mA.Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use.USAGE CAUTIONS1.Protect against static electricity when handling.2.Avoid storage at a high temperature and high humidity.Data Sheet PN10222EJ05V0DS 13SPECIFICATION OF VDE MARKS LICENSE DOCUMENTParameter Symbol Spec.UnitApplication classification (DIN EN 60664-1 VDE0110 Part 1) for rated line voltages ≤ 300 Vr.m.s.for rated line voltages ≤ 600 Vr.m.s.IV IIIClimatic test class (DIN EN 60664-1 VDE0110) 55/100/21Dielectric strengthmaximum operating isolation voltageTest voltage (partial discharge test, procedure a for type test and random test)U pr = 1.5 × U IORM , P d < 5 pCU IORM U pr 890 1 335V peak V peak Test voltage (partial discharge test, procedure b for all devices) U pr = 1.875 × U IORM , P d < 5 pC U pr 1 669 V peakHighest permissible overvoltageU TR 8 000 V peak Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) 2Clearance distance >7.0 mm Creepage distance>7.0 mm Comparative tracking index (DIN IEC 112/VDE 0303 Part 1) CTI 175 Material group (DIN EN 60664-1 VDE0110 Part 1) III a Storage temperature range T stg –55 to +150 °C Operating temperature range T A –55 to +100°C Isolation resistance, minimum value V IO = 500 V dc at T A = 25°CV IO = 500 V dc at T A MAX. at least 100°CRis MIN. Ris MIN.10121011 Ω Ω Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperatureCurrent (input current I F , Psi = 0) Power (output or total power dissipation) Isolation resistanceV IO = 500 V dc at T A = TsiTsi Isi Psi Ris MIN.175 400 700 109°C mA mW Ω<R>Data Sheet PN10222EJ05V0DS14The information in this document is current as of September, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document.NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features.NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific".The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application.The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application.(Note)••••••M8E 02. 11-1(1)(2)"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes itsmajority-owned subsidiaries."NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (asdefined above).Computers, office equipment, communications equipment, test and measurement equipment, audioand visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots.Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support).Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems and medical equipment for life support, etc."Standard":"Special":"Specific":Data Sheet PN10222EJ05V0DS15G。

IS62WV25616ALL IS62WV25616BLLISSI®Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.256K x 16 LOW VOLTAGE,ULTRA LOW POWER CMOS STATIC SRAMFEATURES•High-speed access time: 55ns, 70ns •CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby •TTL compatible interface levels •Single power supply1.65V--2.2V V DD (IS62WV25616ALL)2.5V--3.6V V DD (IS62WV25616BLL)•Fully static operation: no clock or refresh required •Three state outputs•Data control for upper and lower bytes •Industrial temperature available •Lead-free availableDESCRIPTIONThe ISSI IS62WV25616ALL/IS62WV25616BLL are high-speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI 's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CS1 is HIGH (deselected) or when CS1 is LOW and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE ) controls both writing and reading of the memory. A data byte allows Upper Byte (UB ) and Lower Byte (LB )access.The IS62WV25616ALL/IS62WV25616BLL are packaged in the JEDEC standard 44-Pin TSOP (TYPE II) and 48-pin mini BGA (6mmx8mm).MAY 20052 Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev.C IS62WV25616ALL, IS62WV25616BLLISSI®PIN DESCRIPTIONSA0-A17Address Inputs I/O0-I/O15Data Inputs/Outputs CS1Chip Enable Input OE Output Enable Input WE Write Enable InputLB Lower-byte Control (I/O0-I/O7)UB Upper-byte Control (I/O8-I/O15)NC No Connection V DD Power GNDGround44-Pin mini TSOP (Type II)(Package Code T)1234567891011121314151617181920212244434241403938373635343332313029282726252423A4A3A2A1A0CS1I/O0I/O1I/O2I/O3V DD GND I/O4I/O5I/O6I/O7WE A16A15A14A13A12A5A6A7OE UB LB I/O15I/O14I/O13I/O12GND V DD I/O11I/O10I/O9I/O8NC A8A9A10A11A17PIN CONFIGURATIONS48- ball mini BGA (6mm x 8mm)(Package Code B)IS62WV25616ALL, IS62WV25616BLL ISSI®TRUTH TABLEI/O PINMode WE CS1OE LB UB I/O0-I/O7I/O8-I/O15V DD Current Not Selected X H X X X High-Z High-Z I SB1, I SB2X X X H H High-Z High-Z I SB1, I SB2 Output Disabled H L H L X High-Z High-Z I CCH L H X L High-Z High-Z I CCRead H L L L H D OUT High-Z I CCH L L H L High-Z D OUTH L L L L D OUT D OUTWrite L L X L H D IN High-Z I CCL L X H L High-Z D INL L X L L D IN D INABSOLUTE MAXIMUM RATINGS(1)Symbol Parameter Value UnitV TERM Terminal Voltage with Respect to GND–0.2 to V DD+0.3VV DD V DD Related to GND–0.2 to V DD+0.3VT STG Storage Temperature–65 to +150°CP T Power Dissipation 1.0WNote:1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. Thisis a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.OPERATING RANGE (V DD)Range Ambient Temperature IS62WV25616ALL IS62WV25616BLLCommercial0°C to +70°C 1.65V - 2.2V 2.5V-3.6VIndustrial–40°C to +85°C 1.65V - 2.2V 2.5V-3.6VDC ELECTRICAL CHARACTERISTICS(Over Operating Range)Symbol Parameter Test Conditions V DD Min.Max.Unit V OH Output HIGH Voltage I OH = -0.1 mA 1.65-2.2V 1.4—VI OH = -1 mA 2.5-3.6V 2.2—VV OL Output LOW Voltage I OL = 0.1 mA 1.65-2.2V—0.2VI OL = 2.1 mA 2.5-3.6V—0.4VV IH Input HIGH Voltage 1.65-2.2V 1.4V DD + 0.2V2.5-3.6V 2.2V DD + 0.3VV IL(1)Input LOW Voltage 1.65-2.2V–0.20.4V2.5-3.6V–0.20.6VI LI Input Leakage GND ≤ V IN≤ V DD–11µAI LO Output Leakage GND ≤ V OUT≤ V DD, Outputs Disabled–11µA Notes: 1. V IL (min.) = –1.0V for pulse width less than 10 ns.IS62WV25616ALL, IS62WV25616BLL ISSI®IS62WV25616ALL, POWER SUPPLY CHARACTERISTICS(1)(Over Operating Range)Symbol Parameter Test Conditions Max.Unit70I C C V DD D ynamic O perating V DD=M ax.,Com.25m ASupply C urrent I OUT = 0 mA, f = f MAX Ind.30I CC1Operating S upply V DD = Max., CS1 = 0.2V Com.10m ACurrent WE=V DD-0.2V Ind.10f=1MHZI SB1TTL Standby Current V DD=M ax.,Com.0.35m A(TTL Inputs)V IN = V IH or V IL Ind.0.35CS1 = V IH , f = 1 MH ZORULB Control V DD = Max., V IN = V IH or V ILCS1 = V IL, f = 0, UB = V IH, LB = V IHI SB2CMOS S tandby V DD=M ax.,Com.15µACurrent (CMOS Inputs)CS1≥V DD – 0.2V,Ind.15V IN≥V DD – 0.2V, orV IN≤ 0.2V, f = 0ORULB Control V DD = Max., CS1 = V IL,V IN≤ 0.2V, f = 0; UB / LB = V DD – 0.2VIS62WV25616BLL, POWER SUPPLY CHARACTERISTICS(1)(Over Operating Range)Symbol Parameter Test Conditions Max.Max.Unit5570I C C V DD D ynamic O perating V DD=M ax.,Com.4035m ASupply C urrent I OUT = 0 mA, f = f MAX Ind.4540I CC1Operating S upply V DD = Max., CS1 = 0.2V Com.1515m ACurrent WE=V DD-0.2V Ind.1515f=1MHZI SB1TTL Standby Current V DD=M ax.,Com.0.350.35m A(TTL Inputs)V IN = V IH or V IL Ind.0.350.35CS1 = V IH, f = 1 MH ZORULB Control V DD = Max., V IN = V IH or V ILCS1 = V IL, f = 0, UB = V IH, LB = V IHI SB2CMOS S tandby V DD=M ax.,Com.1515µACurrent (CMOS Inputs)CS1≥V DD – 0.2V,Ind.1515V IN≥V DD – 0.2V, orV IN≤ 0.2V, f = 0ORULB Control V DD = Max., CS1 = V IL,V IN≤ 0.2V, f = 0; UB / LB = V DD – 0.2V4 Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev.CIS62WV25616ALL, IS62WV25616BLL ISSI®CAPACITANCE(1)Symbol Parameter Conditions Max.UnitC IN Input Capacitance V IN = 0V8pFC OUT Input/Output Capacitance V OUT = 0V10pFNote:1.Tested initially and after any design or process changes that may affect these parameters.AC TEST CONDITIONSIS62WV25616ALL IS62WV25616BLLParameter(Unit)(Unit)Input Pulse Level0.4V to V DD-0.2V0.4V to V DD-0.3VInput Rise and Fall Times 5 ns5nsInput and Output Timing V REF V REFand Reference LevelOutput Load See Figures 1 and 2See Figures 1 and 2IS62WV25616ALL IS62WV25616BLL1.65V-2.2V 2.5V -3.6VR1(Ω)30703070R2(Ω)31503150V REF0.9V 1.5VV TM 1.8V 2.8VFigure 1Figure 2IS62WV25616ALL, IS62WV25616BLL ISSI®READ CYCLE SWITCHING CHARACTERISTICS(1)(Over Operating Range)55 ns70 nsSymbol Parameter Min.Max.Min.Max.Unit t RC Read Cycle Time55—70—ns t AA Address Access Time—55—70ns t OHA Output Hold Time10—10—ns t ACS1CS1 Access Time—55—70ns t DOE OE Access Time—25—35ns t HZOE(2)OE to High-Z Output—20—25ns t LZOE(2)OE to Low-Z Output5—5—ns t HZCS1CS1 to High-Z Output020025ns t LZCS1CS1 to Low-Z Output10—10—ns t BA LB, UB Access Time—55—70ns t HZB LB, UB to High-Z Output020025ns t LZB LB, UB to Low-Z Output0—0—ns Notes:1.Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 toV DD-0.2V/V DD-0.3V and output loading specified in Figure 1.2.Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.6 Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev.CIS62WV25616ALL, IS62WV25616BLL ISSI®AC WAVEFORMSREAD CYCLE NO. 1(1,2) (Address Controlled) (CS1 = OE = V IL, WE = V IH, UB or LB = V IL)READ CYCLE NO. 2(1,3)(CS1, OE, AND UB/LB Controlled)Notes:1.WE is HIGH for a Read Cycle.2.The device is continuously selected. OE, CS1, UB, or LB = V IL. WE=V IH.3.Address is valid prior to or coincident with CS1 LOW transition.IS62WV25616ALL, IS62WV25616BLL ISSI®WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)55 ns70 nsSymbol Parameter Min.Max. Min.Max.Unit t WC Write Cycle Time 55— 70—ns t SCS1CS1 to Write End 45— 60—ns t AW Address Setup Time to Write End45— 60—ns t HA Address Hold from Write End0— 0—ns t SA Address Setup Time 0— 0—ns t PWB LB, UB Valid to End of Write45— 60—ns t PWE WE Pulse Width 40— 50—ns t SD Data Setup to Write End 25— 30—ns t HD Data Hold from Write End0— 0—ns t HZWE(3)WE LOW to High-Z Output—20 —20ns t LZWE(3)WE HIGH to Low-Z Output 5— 5—ns Notes:1.Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4V toV DD-0.2V/V DD-0.3V and output loading specified in Figure 1.2.The internal write time is defined by the overlap of CS1 LOW and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but any one cango inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write.3.Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.8 Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev.CIS62WV25616ALL, IS62WV25616BLL ISSI®AC WAVEFORMSWRITE CYCLE NO. 1(1,2)(CS1 Controlled, OE = HIGH or LOW)1.WRITE is an internally generated signal asserted during an overlap of the LOW states on the CS1 and WE inputs and atleast one of the LB and UB inputs being in the LOW state.2.WRITE = (CS1) [ (LB) = (UB) ] (WE).WRITE CYCLE NO. 2 (WE Controlled: OE is HIGH During Write Cycle)IS62WV25616ALL, IS62WV25616BLL ISSI®WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)WRITE CYCLE NO. 4 (UB/LB Controlled)10 Integrated Silicon Solution, Inc. — — 1-800-379-4774Rev.CIS62WV25616ALL, IS62WV25616BLL ISSI®DATA RETENTION SWITCHING CHARACTERISTICSSymbol Parameter Test Condition Min.Max.UnitV DR V DD for Data Retention See Data Retention Waveform 1.2 3.6VI DR Data Retention Current V DD = 1.2V, CS1≥ V DD – 0.2V—15µAt SDR Data Retention Setup Time See Data Retention Waveform0—nst RDR Recovery Time See Data Retention Waveform t RC—nsDATA RETENTION WAVEFORM (CS1 Controlled)IS62WV25616ALL, IS62WV25616BLL ISSI®ORDERING INFORMATIONIS62WV25616ALL (1.65V-2.2V)Commercial Range: 0°C to +70°CSpeed (ns)Order Part No.Package70IS62WV25616ALL-70T TSOPIndustrial Range: –40°C to +85°CSpeed (ns)Order Part No.Package70IS62WV25616ALL-70TI TSOP70IS62WV25616ALL-70BI mini BGA (6mmx8mm)IS62WV25616BLL (2.5V - 3.6V)Commercial Range: 0°C to +70°CSpeed (ns)Order Part No.Package55IS62WV25616BLL-55T TSOP70IS62WV25616BLL-70T TSOPIndustrial Range: –40°C to +85°CSpeed (ns)Order Part No.Package55IS62WV25616BLL-55TI TSOP55IS62WV25616BLL-55TLI TSOP, Lead-free55IS62WV25616BLL-55BI mini BGA (6mmx8mm)55IS62WV25616BLL-55BLI mini BGA (6mmx8mm), Lead-freePACKAGING INFORMATIONISSI®Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to Mini Ball Grid ArrayPackage Code: B (48-pin)PACKAGING INFORMATIONISSI®Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any timewithout notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to Plastic TSOPPackage Code: T (Type II)。

XPT2046 Touch Screen Controller
XPT2046 Data Sheet
2007.5
Copyright©2007, SHENZHEN XPTEK TECHNOLOGY CO.,LTD
1/30
XPT2046 Touch Screen Controller
Copyright©2007, SHENZHEN XPTEK TECHNOLOGY CO.,LTD
2/30
XPT2046 Touch Screen Controller
General Description
The XPT2046 is a 4-wire resistive touch screen controller that incorporates a 12-bit 125 kHz sampling SAR type A/D converter. The XPT2046 operates down to 2.2V supply voltage and supports digital I/O interface voltage from 1.5V to VCC in order to connect low voltage uP. The XPT2046 can detect the pressed screen location by performing two A/D conversions. In addition to location, the XPT2046 also measures touch screen pressure.On-chip VREF can be utilized for analog auxiliary input, temperature measurement and battery monitoring withthe ability to measure voltage from 0V to 5V. The XPT2046 also has an on-chip temperature sensor The XPT2046 is available in 16pin QFN thin package(0.75mm in height) and has the operating temperature range of -40°C to +85°C