AO4600 规格书AOS推荐

Symbol Typ Max 4862.574110R θJL 3540Steady-State °C/W Thermal Characteristics: n-channel and p-channelMaximum Junction-to-Lead C Steady-State °C/WParameterUnits Maximum Junction-to-AmbientA t ≤ 10s R θJA °C/W Maximum Junction-to-AmbientA AO4600Complementary Enhancement Mode Field Effect TransistorSymbol Min Typ Max Units BV DSS 30V 1T J =55°C 5I GSS100nA V GS(th)0.71 1.4V I D(ON)25A 22.627T J =125°C33402732m Ω4250m Ωg FS1216S V SD0.711V I S 3A C iss 8581050pF C oss 110pF C rss 80pF R g 1.42ΩQ g 9.612nC Q gs 1.65nC Q gd 3nC t D(on) 5.7ns t r 13ns t D(off)37ns t f 4.2ns t rr Body Diode Reverse Recovery time 15.520ns Q rr Body Diode Reverse Recovery charge7.9nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICALCOMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICETurn-Off Fall Time SWITCHING PARAMETERS Total Gate Charge V GS =4.5V, V DS =15V, I D =6.9A Gate Source Charge Gate Drain Charge Turn-On DelayTime V GS =10V, V DS =15V, R L =2.2Ω,R GEN =6ΩReverse Transfer Capacitance Turn-On Rise Time Turn-Off DelayTime Gate resistance V GS =0V, V DS =0V, f=1MHz Forward Transconductance V DS =5V, I D =5A Diode Forward Voltage I S =1A Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance V GS =0V, V DS =15V, f=1MHzOutput Capacitance R DS(ON)Static Drain-Source On-Resistance V GS =10V, I D =6.9Am ΩV GS =4.5V, I D =6.0AV GS =2.5V, I D =5AGate Threshold Voltage V DS =V GS I D =250µAOn state drain current V GS =4.5V, V DS =5VV DS =24V, V GS =0V µA Gate-Body leakage current V DS =0V, V GS =±12V I F =5A, dI/dt=100A/µsI F =5A, dI/dt=100A/µs n-channel MOSFET Electrical Characteristics (T J =25°C unless otherwise noted)Parameter Conditions STATIC PARAMETERSDrain-Source Breakdown VoltageI D =250µA, V GS =0V I DSSZero Gate Voltage Drain Current A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOAcurve provides a single pulse rating.TYPICAL N-CHANNEL ELECTRICAL AND THERMAL CHARACTERISTICSSymbolMin Typ Max Units BV DSS -30V -1T J =55°C -5I GSS±100nA V GS(th)-0.7-1-1.4V I D(ON)-25A 42.549T J =125°C745464m Ω80120m Ωg FS 711S V SD -0.75-1V I S -3A C iss 9521200pF C oss 103pF C rss 77pF R g 5.930ΩQ g 9.512nC Q gs 2nC Q gd 3.1nC t D(on)12ns t r 4ns t D(off)37ns t f 12ns t rr 2126ns Q rr 13nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE .p-channel MOSFET Electrical Characteristics (T J =25°C unless otherwise noted)Parameter Conditions STATIC PARAMETERSDrain-Source Breakdown VoltageI D =-250µA, V GS =0V I DSSZero Gate Voltage Drain Current V DS =-24V, V GS =0V µA Gate-Body leakage current V DS =0V, V GS =±12V Gate Threshold Voltage V DS =V GS I D =-250µA On state drain current V GS =-4.5V, V DS =-5V R DS(ON)Static Drain-Source On-Resistance V GS =-10V, I D =-5A m ΩV GS =-4.5V, I D =-4A V GS =-2.5V, I D =-1A Forward Transconductance V DS =-5V, I D =-5A Diode Forward Voltage I S =-1A,V GS =0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance V GS =0V, V DS =-15V, f=1MHz Output Capacitance Reverse Transfer Capacitance Gate resistance V GS =0V, V DS =0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge V GS =-4.5V, V DS =-15V, I D =-5A Gate Source Charge Gate Drain Charge Turn-On DelayTime V GS =-10V, V DS =-15V, R L =3Ω, R GEN =6ΩTurn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time I F =-5A, dI/dt=100A/µs Body Diode Reverse Recovery Charge I F =-5A, dI/dt=100A/µsA: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.Rev 4 : Sept 2005。