AO4490 规格书

Symbol V DS V GS
I DM I AR E AR T J , T STG
Symbol
Typ Max 32456275R θJL
1824W Junction and Storage Temperature Range A P D °C
2.81.8-55 to 150
T A =70°C
I D Continuous Drain Current AF
Maximum
Units Parameter T A =25°C T A =70°C
30Maximum Junction-to-Ambient A Steady-State 1613120Avalanche Current G
30°C/W Absolute Maximum Ratings T A =25°C unless otherwise noted V V ±20Pulsed Drain Current B Power Dissipation
T A =25°C Gate-Source Voltage Drain-Source Voltage Maximum Junction-to-Lead C
Steady-State
°C/W
Thermal Characteristics
Parameter
Units Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W A Repetitive avalanche energy L=0.3mH
G
135mJ ESD Protected 100% UIS Tested 100% Rg Tested
SOIC-8
Top View Bottom View D D
D D S
S S G G
D
S
Symbol
Min Typ Max
Units BV DSS 30
37
V 1T J =55°
C 5I GSS 10µA V GS(th) 1.4 1.8
2.5V I D(ON)
120
A 67.2T J =125°
C 8.510810
m Ωg FS 55S V SD 0.70
1.0V I S
4
A C iss 1803
2170pF C oss 387pF C rss 238pF R g
1.32ΩQ g (10V)36
48nC Q g (4.5V)19nC Q gs 3.9nC Q gd 8.7nC t D(on)7.6
ns t r 6.4ns t D(off)27ns t f 8.5ns t rr 2733ns Q rr
17
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate Drain Charge V GS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS
Total Gate Charge Gate Source Charge Gate resistance
V GS =0V, V DS =0V, f=1MHz
Total Gate Charge V GS =10V, V DS =15V, I D =16A
Turn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =15V, R L =1Ω,
R GEN =3Ω
Turn-Off Fall Time
Turn-On DelayTime m ΩV GS =4.5V, I D =12A
I S =1A,V GS =0V
V DS =5V, I D =16A Maximum Body-Diode Continuous Current
Input Capacitance Output Capacitance
DYNAMIC PARAMETERS
R DS(ON)Static Drain-Source On-Resistance
Forward Transconductance Diode Forward Voltage
I DSS µA Gate Threshold Voltage V DS =V GS I D =250µA V DS =30V, V GS =0V
V DS =0V, V GS = ±16V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter
Conditions Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I F =16A, dI/dt=100A/µs
Drain-Source Breakdown Voltage On state drain current
I D =250µA, V GS =0V V GS =10V, V DS =5V V GS =10V, I D =16A
Reverse Transfer Capacitance I F =16A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design.B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°
C. The SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse.Rev4: Nov. 2010
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vds
Charge
Gate Charge Test Circuit & Waveform
Vdd
90%
Resistive Switching Test Circuit & Waveforms
Vdd
Vds
Id
Vgs
BV I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
AR
DSS
2
E = 1/2 LI Vdd AR AR。