BF591中文资料

BF591中文资料

DATA SHEET

Product speci?cation

Supersedes data of September 1994

File under Discrete Semiconductors, SC041997Jul02

DISCRETE SEMICONDUCTORS BF591; BF593

NPN high-voltage transistors

M3D067

NPN high-voltage transistors BF591; BF593

FEATURES

Low current (max. 150mA)

High voltage (max. 210V).

APPLICATIONS

Telephone systems.

DESCRIPTION

NPN high-voltage transistor in a TO-202; SOT128B plastic

package.PINNING

PIN DESCRIPTION

1emitter

2collector, connected to mounting base

3base

Fig.1Simplified outline (TO-202; SOT128B)

and symbol.

handbook, halfpage

2

1

3

MAM305

123 QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT V CBO

collector-base voltage open emitter

BF591?210V

BF593?250V

V CEO collector-emitter voltage open base

BF591?170V

BF593?210V

I CM peak collector current?300mA

P tot total power dissipation T amb≤55°C? 1.3W

h FE DC current gain I C=20mA; V CE=5V30?

I C=100mA; V CE=6V30?

NPN high-voltage transistors BF591; BF593

LIMITING VALUES

In accordance with the Absolute Maximum Rating System

(IEC134).

SYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT V CBO

collector-base voltage open emitter

BF591?210V

BF593?250V

V CEO collector-emitter voltage open base

BF591?170V

BF593?210V

V EBO emitter-base voltage open collector?5V

I C collector current (DC)?150mA

I CM peak collector current?300mA

I BM peak base current?100mA

P tot total power dissipation T amb≤55°C? 1.3W

T stg storage temperature?65+150°C

T j junction temperature?150°C T amb operating ambient temperature?65+150°C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R th j-a thermal resistance from junction to ambient in free

air73K/W

CHARACTERISTICS

T j=25°C unless otherwise speci?ed.

SYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT I CBO

collector cut-off current I E=0; V CB=60V?50nA

I E=0; V CB=60V; T j=140°C?1μA

I EBO emitter cut-off current I C=0; V EB=5V?100nA

h FE DC current gain note1

I C=20mA; V CE=5V30?

I C=100mA; V CE=6V30?

I C=150mA; V CE=7V20?

Note

1.Pulse test: t p≤300μs;δ≤0.01.

NPN high-voltage transistors

BF591; BF593

PACKAGE OUTLINE

UNIT b p D E 1L 1L 2(1)max L c c 1E P Q w REFERENCES

OUTLINE VERSION EUROPEAN PROJECTION

ISSUE DATE IEC

JEDEC EIAJ

mm

0.80.6

0.650.5

0.560.46

8.68.4

10.19.9 10.410.0

2.54

13.312.2

e 15.08

e H E 24.223.8

2.42.0

3.83.6

P 13.93.7

0.25

1.71.5

DIMENSIONS (mm are the original dimensions) 2.5

SOT128B

TO-202

97-02-28

A c 1

D

E

L 1

L 2L

b p c

E 1H E

P

Q

A

P 1

4.64.4

Plastic single-ended leaded (through hole) package; with

cooling fin, mountable to heatsink,1 mounting hole; 3 leads (in-line)

SOT128B e e 112

3

510 mm

scale

w M

Note

1. Plastic flash allowed within this zone

NPN high-voltage transistors BF591; BF593

DEFINITIONS

Data sheet status

Objective speci?cation This data sheet contains target or

goal speci?cations for product development. Preliminary

speci?cation This data sheet contains preliminary data;

supplementary data may be published later. Product speci?cation

This data sheet contains ?nal product speci?cations.

Limiting values

Limiting values given are in accordance with the Absolute

Maximum Rating System (IEC 134). Stress above one or more of

the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these

or at any other conditions above those given in the

Characteristics sections of the speci?cation is not implied.

Exposure to limiting values for extended periods may affect

device reliability.

Application information

Where application information is given, it is advisory and

does not form part of the speci?cation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury.

Philips customers using or selling these products for use in such

applications do so at their own risk and agree to fully indemnify

Philips for any damages resulting from such improper use or sale.

NPN high-voltage transistors BF591; BF593

NOTES

NPN high-voltage transistors BF591; BF593

NOTES

Internet: /doc/0b12193695.html,

Philips Semiconductors – a worldwide company

Philips Electronics N.V. 1997

SCA54

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