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1SMBF5957B中文资料

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VOLTAGE RANGE: 3.3 - 240VRatingSymbolValueUnit DC Power Dissipation @ TL

= 75 °C1.5W Measured zero lead length(1" square copper pad, FR-4 board)20 Derate above 75 °C Thermal Resistance Junction to Lead RӨJL50 DC Power Dissipation @ Ta = 25 °C 0.5W (FR-4 board) Derate above 25 °C

4.0 Thermal Resistance Junction to Ambient R

ӨJA250 Maximum Forward Voltage at IF = 200 mAVF Operating Junction and Storang Temperature RangeTJ, TSTGV°C1.5- 65 to + 150°C/WmW/°CmW/°CPD°C/WPD Complete Voltage Range 3.3 to 240 VoltsHigh peak reverse power dissipation High reliability Low leakage current POWER: 1.5Wa t !!!!

1 of 2Maximum RatingsTA= 25°C unless otherwise specified1SMBF5913B - 1SMBF5957B

!!per MIL-STD-750, Method 2026!!!Weight:0.0018 ounces,0.05gramsMechanical Data Case:SMBF , Molded Plastic Terminals: Solder Plated, Solderable Polarity: Cathode Band or Cathode Notch Marking: Type Number0.73

0.77 0.75 0.0210.20 1.962.00 1.98 1.381.351.323.60 3.63 3.574.30 4.33 4.275.505.55 5.45SMBFAELBCEHDEDADimMin Max TypBCHLAll Dimensions in mm0.019 FeaturesSURFACE MOUNT SILICON ZENER DIODES 1SMBF5957B 1SMBF5957B

1SMBF5957B 1SMBF5957BELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specifiedNominal ZenerMaximum ZenerMaximum ReverseMaximum DCVoltageImpedanceLeakage CurrentZener CurrentVZ @ IZTIZTZZT @ IZTZZK @ IZKIZKIR @ VRIZM(V)(mA)(Ω)(Ω)(mA)(μA)(V)(mA)3.3113.6105001.01001.04543.6104.29.05001.0751.04163.996.17.55001.0251.03844.387.26.05001.05.01.03484.779.85.05001.05.01.53195.173.54.03501.05.02.02945.666.92.02501.05.03.02676.260.52.02001.05.04.02416.855.12.52001.0505.22207.550.03.04000.5506.02008.245.73.54000.5506.51829.141.24.05000.5507.01641037.54.55000.25508.01501134.15.55500.25508.41361231.26.55500.251.09.11251328.87.05500.251.09.91151525.09.06000.251.011.41001623.4106000.251.012.2931820.8126500.251.013.7832018.7146500.251.015.2752217.017.56500.251.016.7682415.6197000.251.018.2622713.9237000.251.020.6553012.5267500.251.022.8503311.4338000.251.025.1453610.4388500.251.027.441399.6459000.251.029.738438.7539500.251.032.734478.06710000.251.035.831517.37011000.251.038.829566.78613000.251.042.626626.010015000.251.047.124685.512017000.251.051.722755.014020000.251.056.020824.616025000.251.062.218914.120030000.251.069.2161003.725031000.251.076.0151103.430040000.251.083.6131203.138045000.251.091.2121302.945050000.251.098.8111502.560060000.251.0114.0101602.370065000.251.0121.69.01802.190070000.251.0136.88.02001.9120080000.251.0152.07.02401.5160090000.251.0182.46.0Note : (1) Suffix " B " indicates ± 5% tolerance suffix " A " indicates ±10% tolerance.TYPE

2 of 2 1SMBF5913B 1SMBF5914B 1SMBF5915B 1SMBF5916B 1SMBF5917B 1SMBF5918B 1SMBF5919B 1SMBF5920B 1SMBF5921B 1SMBF5922B 1SMBF5923B 1SMBF5924B 1SMBF5925B 1SMBF5926B 1SMBF5927B 1SMBF5928B 1SMBF5929B 1SMBF5930B 1SMBF5931B 1SMBF5932B 1SMBF5933B 1SMBF5934B 1SMBF5935B 1SMBF5936B 1SMBF5937B 1SMBF5938B 1SMBF5939B 1SMBF5940B 1SMBF5941B 1SMBF5942B 1SMBF5943B 1SMBF5944B 1SMBF5945B 1SMBF5946B 1SMBF5947B 1SMBF5948B 1SMBF5949B 1SMBF5950B 1SMBF5951B 1SMBF5952B 1SMBF5953B 1SMBF5954B 1SMBF5955B 1SMBF5956B 1SMBF5957B 1SMBF5957B 1SMBF5957B

1SMBF5957B 1SMBF5957B

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571007中文资料

571007中文资料

1.77".49".040".056"DIA..48".12".68".44".20".24".598".602".698".702".242".246"

ORDERINGINFORMATION:Catalog NumberBottomFuse LengthStandardWatertightTerminalRange*571027571027PStraight15/16" – 13/8"571028571028PRt.Angle571007571007PStraight113/32" – 11/2"571008571008PRt.Angle571OCC571OCCPStraight11/2"571RCC571RCCPRt.Angle*Fuse diameter is 13/32".98FUSEHOLDERSFOR3AG,5 x 20mm,ORMIDGETFUSESShock-Safe for 3AG or 5x20mm Fuses PC Board TypeSimilar to Shock-Safe fuseholders shown on precedingpage, but designed for P.C.board mounting.Shock-Safedesign per IECStandards 60127 and 60065.Two different knob styles available for use with 3AG(1/4" x 11/4") or 5 x 20mm fuses.APPROVALS:Recognized under the Components Programof Underwriters Laboratories (16A, 250V).Certified by CSA (15A, 250V).SEMKOapproved (6.3A, 250V).VDEapproved (10A, 250V).SPECIFICATIONS:Electrical:Rating:See APPROVALS.Insulation Resistance:10,000 megohm minimum at 500 VDC.Contact Resistance:Less than .005 ohm average at acurrent of one ampere.Dielectric Strength:4000 volts minimum.Mounting:Intended for soldering to printed circuit boards.Molded Parts:Body Material:Black glass-filled thermoplas-tic (UL 94V0).Knob:Screwdriver slot, fuse extractor type with nickel-plated, copper alloy insert.Spring-loaded, bayonet style.Knob Material:Grey or Black glass-filled thermoplastic (UL 94V0).Terminals:Brass.Tin-plated.Ambient Temperature:–40°C to +85°C.ORDERINGINFORMATION:CatalogFuseNumberSize345 1011/4" x 11/4" Fuses345 1215 x 20mm FusesBody only:345 101-010Knob only:345 101-020 (1/4" x 11/4") Grey;345 121-020 (5 x 20mm) Black.for Midget Fuses Panel Mount TypeTwo panel mount fuseholder designs are available for sup-plementary or Class CCbranch circuit protection.ClassCCfuses have a rejection feature on one end cap which mateswith the rejection feature of Littelfuse Class CCfuse blocksand fuseholders to prevent the installation of fuses withlower voltage ratings or interrupting ratings.APPROVALS:Recognized under the Components Programof Underwriters Laboratories and Certified by CSA.SPECIFICATIONS:Electrical:Rated at 30 amperes for any voltage up to 600 volts.Dielectric Strength:4000 volts minimum.Mounting:Flange mounting either in front of or behindpanel.Watertight version must be front panel mounted.Maximum panel thickness is .75".Molded Parts:Black thermoplastic (UL94V0).Knob:Screw type, with engraved markings:unfilledcharacters (571 007, 571 008, 571007P,571008P), lightblue characters (571027, 571028, 571027P, 571028P).Terminals:bination solder and 1/4"Quick-Connect.Side terminal has .125" diameter hole.Bottom terminal has .156" x .124" elongated hole.Ambient Temperature:–40°C to +85°C.Hardware:571007, 571008, 571027, 571028, 571OCC,and 571RCC, none;571007P, 571008P, 571027P, 571028P, 571OCCP, and 571RCCP, two O-rings forwatertight seal per MIL-PRF-19207.®®VDE®®Reference Dimensions

1SMA5931A中文资料

1SMA5931A中文资料

RatingSymbolValue

Unit

DC Power Dissipation (Note1)PD Maximum Forward Voltage at IF = 200 mAVF Maximum Thermal Resistance Junction to Ambient Air (Note2)R

ӨJA Junction Temperature RangeTJ Storage Temperature RangeTSVW

- 55 to + 175ºC

ºCK / W1.5

1.5

130

- 55 to + 175SURFACE MOUNT SILICON ZENER DIODES1SMA5913A-1SMA5957A

Features

Complete Voltage Range 3.3 to 240 Volts

High peak reverse power dissipation

High reliability

Low leakage currentD

D

D

D

Maximum Ratings@ TA= 25°C unless otherwise specified

1 of 2

0255075100125150175TL, LEAD TEMPERATURE (°

C)0.3

0.60.91.21.5

PD, MAXIMUM DISSIPA

TION

(WATTS)Fig. 1 POWER TEMPERATURE DERATING CURVE

5.0 mm2 ( 0.013 mm thick )copper land areas.

0Note : (1)TL = Lead temperature at 5.0 mm2

( 0.013 mm thick ) copper land area POWER: 1.5Wa t VOLTAGE RANGE: 3.3 - 240V

Case: SMA/DO-214AC, Molded Plastic!! Terminals: Solder Plated, Solderable

CD957B中文资料

CD957B中文资料

23 MILS15 MILS

15 MILS23 MILS• 1N962B THRU 1N986B AVAILABLE IN JANHC AND JANKCPER MIL-PRF-19500/117• ZENER DIODE CHIPS• 0.5 WATT CAPABILITYWITH PROPER HEAT SINKING• ALLJUNCTIONS COMPLETELYPROTECTED WITH SILICON DIOXIDE• COMPATIBLE WITH ALLWIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOWCD957BthruCD986B

Backside is Cathode FIGURE 1

DESIGN DATAMETALLIZATION:Top: (Anode).....................AlBack: (Cathode)...............AuALTHICKNESS...........25,000 ÅMinGOLD THICKNESS.......4,000 ÅMinCHIPTHICKNESS.................10 MilsCIRCUIT LAYOUT DATA:For Zener operation, cathodemust be operated positivewith respect to anode.TOLERANCES:ALLDimensions +2 milsMAXIMUM RATINGSOperating Temperature: -65°C to +175°CStorage Temperature: -65°C to +175°CForward Voltage @ 200mA: 1.5 volts maximum

ELECTRICALCHARACTERISTICS @ 25°CCDINOMINALZENERMAX. DCTYPEZENER TESTMAXIMUM ZENERIMPEDANCEZENERMAX. REVERSENUMBER VOLTAGECURRENT(NOTE 3) CURRENTLEAKAGE CURRENTVZl ZTl ZMlR@ VR(NOTE 1)(NOTE 2)ZZT@ l ZTZZK@ l ZKVOLTSmAOHMSOHMSmAmAµ AVOLTSCD957B6.818.54.57001.0555.05.2CD958B7.516.55.5700.5505.05.7CD959B8.215.06.5700.5455.06.2CD960B9.114.07.5700.5415.06.9CD961B1012.58.5700.25382.07.6CD962B1111.59.5700.25321.08.4CD963B1210.511.5700.25311.09.1CD964B139.513700.25280.59.9CD965B158.516700.25250.511CD966B167.817700.25240.512CD967B187.021750.25200.514CD968B206.225750.25180.515CD969B225.629750.25160.517CD970B245.233750.25150.518CD971B274.641750.25130.521CD972B304.2491000.25120.523CD973B333.8581000.25110.525CD974B363.4701000.25100.527CD975B393.2901000.259.50.530CD976B433.0931500.258.80.533CD977B472.71051500.257.90.536CD978B512.51251500.257.40.539CD979B562.21502000.256.80.543CD980B622.01852000.256.00.547CD981B681.82302000.255.50.552CD982B751.72702000.255.00.556CD983B821.53303000.254.60.562CD984B911.44003000.254.10.569CD985B1001.35003000.253.70.576CD986B1101.17504000.253.30.584NOTE 1Zener voltage range equals nominal voltage +5% for “B” Suffix. “A” Suffix denotes +10%,No Suffix denotes +20%. "C" suffix = +2% and "D" suffix = +1%.NOTE 2Zener voltage is read using a pulse measurement, 10 milliseconds maximum.NOTE 3Zener impedance is derived by superimposing on 1ZTA60Hz rms a.c. current equalto 10% of 1ZT

AN957中文资料

AN957中文资料

AN-957 (v.Int)Measuring HEXFET®Characteristics(HEXFET is the trademark for International Rectifier Power MOSFETs)Topics covered:

• Converting the nomenclature from bipolars to MOSFETs• P-Channel HEXFET Power MOSFETs• Initial settings• Breakdown• Drain leakage• Gate threshold• Gate leakage• Transconductance• On-resistance• Diode drop• Characteristics in synchronous rectification• Transfer characteristics• Measurements without a curve tracer• Device capacitances• Switching times• Gate charge• Reverse recovery• A fixture to speed-up testing time• Related topics

1. General

Curve tracers have generally been designed for making measurements on bipolar transistors. While power MOSFETs can betested satisfactorily on most curve tracers, the controls of these instruments are generally labeled with reference to bipolartransistors, and the procedure to follow in the case of MOSFETs is not immediately obvious. This application note describesmethods for measuring HEXFET Power MOSFET characteristics, both with a curve tracer and with special-purpose test circuits.Testing HEXFET Power MOSFETs on a curve tracer is a simple matter, provided the broad correspondence between bipolartransistor and HEXFET Power MOSFET features are borne in mind. Table 1 matches some features of HEXFET PowerMOSFETs with their bipolar counterparts. The HEXFET Power MOSFET used in all the examples is the IRF630. The controlsettings given in the examples are those suitable for the IRF630. The user must modify these values appropriately when testing adifferent device. The IRF630 was selected since it is a typical mid-range device with a voltage rating of 200 volts and acontinuous current rating of 9 amps (with TC = 25°C). For measurements with currents above 20 amps, or for pulsed tests notcontrolled by the gate, the Tektronix 176 Pulsed HighCurrent Fixture must be used instead of the standard test fixture.The IRF630 is an N-channel device. For a P-channel device, all the test procedures are the same except that the position of thePolarity Selector Switch must be reversed—that is, for P-channel devices, it must be in the PNP position.