φ5直插发射管IR333C-H0-L10

NPNPlastic-EncapsulateTransistorsInternal Structure1.COLLECTOR2.BASE3.EMITTERContinuous Collector Current I C 800mA 45ParameterSymbolRating Unit V CBO Emitter-Base Voltage •Operating Junction Temperature Range: -55℃ to +150℃•Storage Temperature Range: -55℃ to +150℃•Thermal Resistance: 200℃/W Junction to AmbientMaximum Ratings @ 25°C Unless Otherwise SpecifiedFeatures•Halogen Free Available Upon Request By Adding Suffix "-HF"•Epoxy Meets UL 94 V-0 Flammability Rating•Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)V CEO 3025V V 50BC337BC338BC337BC338Collector-Base Voltage Collector-Emitter Voltage5V Power Dissipation P D625mWV EBOBC338I CEO Collector Cutoff Current 0.1V CB =25V, I E =00.2V CE =20V, I B =0µA µA V CB =10V, I E =0, f=1MHzh FE(2)60V BE(sat)V CE =5V, I C =10mA, f=100MHz 1.2V I C =500mA, I B =50mAMHz Emitter Cutoff Current I EBO 0.1h FE(1)100630Transition Frequency f T 210Output CapacitanceC obElectrical Characteristics @ T A =25°C Unless Otherwise SpecifiedParameterSymbol Min TypMaxUnits Conditions50BC337Collector-Base Breakdown VoltageI C =100µA, I E =0V (BR)CBO V I E =10µA, I C =0V EB =4V, I C =0V µAClassification of h FE(1)162540100-250160-400250-600RangeRank V CE =1V, I C =300mA DC Current Gain15pFV CE =1V, I C =100mA I C =500mA, I B =50mA Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage V CE(sat)0.7V V (BR)CEO 30I CBO Emitter-Base Breakdown Voltage BC33825BC338Collector Cutoff Current V (BR)EBO 545I C =10mA, I B =0BC338BC337V 0.2V CE =40V, I B =0BC3370.1V CB =45V, I E =0BC337Collector-Emitter Breakdown VoltageCurve Characteristics015650100150200250C o l l e c t o r C u r r e n t (m A )234Collector-Emitter Voltage (V)Fig. 1 - Static Characteristics100101000D C C u r r e n t G a i nCollector Current (mA)Fig. 2 - DC Current Gain Characteristics10018001010011000C o l l e c t o r -E m i t t e r S a t u r a t i o n V o l t a g e (m V )10Collector Current (mA)Fig. 4 - Collector-Emitter Saturation Voltage Characteristics10001002000B a s e -E m i t t e r S a t u r a t i o n V o l t a g e (m V )Collector Current (mA)Fig. 3 - Base-Emitter Saturation Voltage Characteristics301001030017010Collcetor Current (mA)T r a n s i t i o n f r e q u e n c y (M H z )Fig. 5 - Transition frequency Characteristics0251251500.00.20.40.60.8C o l l e c t o r P o w e rD i s s i p a t i o n (W )5075100Ambient Temperature (°C)Fig. 6 - Collector Power Derating CurveOrdering InformationDevice PackingPart Number-AP Ammo Packing: 20Kpcs/CartonPart Number-BP Bulk:1k/Bag,100K/Ctn; Note : Adding "-HF" Suffix for Halogen Free, eg. Part Number-TP-HF。

元器件交易网Technical Data Sheet 5mm Infrared LED , T-1 3/4IR333C/H0/L10Features․High reliability ․High radiant intensity ․Peak wavelength λp=940nm ․2.54mm Lead spacing ․Low forward voltage ․Pb free ․The product itself will remain within RoHS compliant version.Descriptions․EVERLIGHT’S Infrared Emitting Diode(IR333C/H0/L10) is a high intensity diode , molded in a water clear plastic package. ․The device is spectrally matched with phototransistor , photodiode and infrared receiver module.Applications․Free air transmission system ․Infrared remote control units with high power requirement ․Smoke detector ․Infrared applied systemDevice Selection Guide LED Part No.IRChip MaterialGaAlAsLens ColorWater clearEverlight Electronics Co., Ltd. Device No：DIR-033-087http:\\ Prepared date：07-20-2005Rev 3Page: 1 of 7Prepared by：Jaine Tsai元器件交易网IR333C/H0/L10Package DimensionsNotes: 1.All dimensions are in millimeters 2.Tolerances unless dimensions ±0.25mmAbsolute Maximum Ratings (Ta=25℃)Parameter Continuous Forward Current Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature Power Dissipation at(or below) 25℃Free Air Temperature Symbol IF IFP VR Topr Tstg Tsol Pd Rating 100 1.0 5 -40 ~ +85 -40 ~ +85 260 150 Units mA A V ℃ ℃ ℃ mWNotes: *1:IFP Conditions--Pulse Width≦100μs and Duty≦1%. *2:Soldering time≦5 seconds.Everlight Electronics Co., Ltd. Device No：DIR-033-087http:\\ Prepared date：07-20-2005Rev 3Page: 2 of 7Prepared by：Jaine Tsai元器件交易网IR333C/H0/L10Electro-Optical Characteristics (Ta=25℃)Parameter Symbol Condition IF=20mA IF=100mA Radiant Intensity EePulse Width≦100μs ,Duty≦1%Min. 7.8 -----Typ. 10 45 450 940 45 1.2Max. -----1.5 1.8 4.0 10 --UnitsmW/srIF=1APulse Width≦100μs ,Duty≦1%.Peak Wavelength Spectral Bandwidthλp ΔλIF=20mA IF=20mA IF=20mA IF=100mAnm nmForward VoltageVFPulse Width≦100μs ,Duty≦1%-----1.4 2.6 -40VIF=1APulse Width≦100μs ,Duty≦1%.Reverse Current View AngleIR 2θ1/2VR=5V IF=20mAμA degRankCondition：IF=20mA Unit：mW/sr Bin Number Min Max M 7.80 12.5 N 11.0 17.6Everlight Electronics Co., Ltd. Device No：DIR-033-087http:\\ Prepared date：07-20-2005Rev 3Page: 3 of 7Prepared by：Jaine Tsai元器件交易网IR333C/H0/L10Typical Electro-Optical Characteristics CurvesFig.1 Forward Current vs. Ambient Temperature140 120Fig.2 Spectral Distribution100 80IF=20mA Ta=25° C100 80 60 40 20060 40 20 0-40 -20 020406080100Fig.3 Peak Emission Wavelength Ambient Temperature980Fig.4 Forward Current vs. Forward Voltage4 109603 109402 10920900 -251 100 25 50 75 10001234Everlight Electronics Co., Ltd. Device No：DIR-033-087http:\\ Prepared date：07-20-2005Rev 3Page: 4 of 7Prepared by：Jaine Tsai元器件交易网IR333C/H0/L10Typical Electro-Optical Characteristics CurvesFig.5 Relative Intensity vs. Forward Current Fig.6 Relative Radiant Intensity vs. Angular Displacement1000Ie-Radiant Intensity(mW/sr)-20-1001020 301001.0 0.940 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6100.8 0.70 1 2 3 401010101010IF-Forward Current (mA)Fig.7 Relative Intensity vs. Ambient Temperature(°C)Fig.8 Forward Voltage vs. Ambient Temperature(°C)151.310IF=20mA1.2IF=20mA51.10 25 50 75 100 120125 50 75 100 120Everlight Electronics Co., Ltd. Device No：DIR-033-087http:\\ Prepared date：07-20-2005Rev 3Page: 5 of 7Prepared by：Jaine Tsai元器件交易网IR333C/H0/L10Reliability Test Item And ConditionThe reliability of products shall be satisfied with items listed below. Confidence level：90% LTPD：10% NO. Item Test Conditions Test Hours/ Sample Cycles Sizes 10secs 22pcs IR≧U×2 Ee≦L×0.8 VF≧U×1.2 U：Upper 1000hrs 1000hrs 1000hrs 1000hrs 22pcs 22pcs 22pcs 22pcs Specification Limit L：Lower Specification Limit 0/1 0/1 0/1 0/1 Failure Judgement Criteria Ac/Re1 Solder HeatTEMP.：260℃±5℃ 15mins 5mins 15mins 5mins 10secs 5mins0/1 0/12 Temperature Cycle H : +100℃ L : -40℃ 3 Thermal Shock H :+100℃ L :-10℃ 4 High Temperature Storage 5 Low Temperature Storage300Cycles 22pcs300Cycles 22pcs0/1TEMP.：+100℃ TEMP.：-40℃6 DC Operating Life IF=20mA 7 High Temperature/ 85℃ / 85% R.H High HumidityEverlight Electronics Co., Ltd. Device No：DIR-033-087http:\\ Prepared date：07-20-2005Rev 3Page: 6 of 7Prepared by：Jaine Tsai元器件交易网IR333C/H0/L10Packing Quantity Specification1.500PCS/1Bag，5Bags/1Box 2.10Boxes/1CartonLabel Form SpecificationCPN: Customer’s Production Number P/N : Production Number QTY: Packing Quantity AT: Ranks HUE: Peak Wavelength REF: Reference LOT No: Lot Number MADE IN TAIWAN: Production PlaceRoHSIR333C/H0/L10Notes1. Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for above specification. 2. When using this product, please observe the absolute maximum ratings and the instructions for using outlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets. 3. These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’t reproduce or cause anyone to reproduce them without EVERLIGHT’s consent.EVERLIGHT ELECTRONICS CO., LTD. Office: No 25, Lane 76, Sec 3, Chung Yang Rd, Tucheng, Taipei 236, Taiwan, R.O.CTel: 886-2-2267-2000, 2267-9936 Fax: 886-2267-6244, 2267-6189, 2267-6306 http:\\Everlight Electronics Co., Ltd. Device No：DIR-033-087http:\\ Prepared date：07-20-2005Rev 3Page: 7 of 7Prepared by：Jaine Tsai。

红外线发射管也称红外线发射二极管，属于二极管类。

它是可以将电能直接转换成近红外插件红外线发射管光（不可见光）并能辐射出去的发光器件，主要应用于各种光电开关及遥控发射电路中。

红外线发射管的结构、原理与普通发光二极管相近，只是使用的半导体材料不同。

红外发光二极管通常使用砷化镓（GaAs）、砷铝化镓（GaAlAs）等材料，采用全透明或浅蓝色、黑色的树脂封装。

广州市超毅电子有限公司红外线发射管的介绍•红外线发射管是由红外发光二级管矩组成发光体，用红外辐射效率高的材料（常用砷化镓）制成PN结，正向偏压向PN结注入电流激发红外光，其光谱功率分布为中心波长830～950nm。

LED是英文Light Emitting Diode 的简称，表现是正温度系数，电流越大温度越高，温度越高电流越大，LED 红外灯的功率和电流大小有关，但正向电流超过最大额定值时，红外灯发射功率反而下降。

•红外发射管中晶圆的厂家主要有：台湾有亿光（everlight），鼎元，国外的有韩国、日本多瓦晶圆，国内有深圳奥伦德等•红外发射管（红外线灯管）可广泛用于红外摄像机、音频输出等红外引用产品中，其里面晶片功率大小通常决定发射距离，但红外监控摄像机效果又与红外灯的角度，灯组多少，机板，镜头等有关。

红外摄像机设计距离较近就用角度较大的IR发射管，并且还要跟镜头视角相配合;20米以上的必须用台湾正型12mil以上晶片，日本的也行。

由于市场无序竞争，厂家标榜的照射距离和实际可视距离概念不清，大部分小的红外摄像机生产商为了降低生产成本大量采用国产及台湾10mil、8mil晶片，甚至散型晶圆封装的（包括封装厂IR 发射管不良品）做正型红外灯来装配摄像机。

建议打长距离的用户还是用正型晶片封装的IR发射管，如台湾亿光相对衰减慢、夜视清晰）。

•发射距离、发射角度（15度、30度、45度、60度、90度、120度、180度）、发射的光强度、波长。

以上为物理参数，需了解其电性能参数：市场上常用的直径3mm,5mm为小功率红外线发射管，8mm,10mm为中功率及大功率发射管。

广州市东裕光电科技有限公司GUANGZHOU TONYU TECHNOLOGY CO.,LTD产品规格书SPECIFICATION客户名称CUSTOMER 产品名称PRODUCTION红外线发射管InfraRed Emitting Diode产品型号MODEL DY-IR333C-A 版本号VERSION NOA1.0地址(Add)：广东省广州市番禺区石基镇海涌路3号10号厂房2楼电话(Tel)：************传真(Fax)：************邮箱(E-mail)：************网址(Net)：客户确认CUSTOMER CONFIRMATION 审核CHECKED BY编制PREPARED BY汪建新陈少龙DY-IR333-A产品描述Descriptions●红外发光二极管（IR333C-A）是一种高辐射强度的二极管，模制在一个透明的塑料封装中。

(This Infrared Emitting Diode is a high intensity diode,molded in a Blue plastic package.)●可适配光敏三极管、光敏二极管、红外接收头、红外接收模块等。

(The device is spectrally matched with phototransistor,photodiode and infrared receiver module.)产品特性Features●可靠性高(High reliability)●辐射强度高(High radiant intensity)●峰值波长λp=940nm(Peak wavelengthλp=940nm)●引脚间距2.54mm(2.54mm Lead spacing)●低电压(Low forward voltage)●无铅(Pb free)●符合RoHS要求(This product itself will remain within RoHS compliant version)产品应用Applications●遥控器(Remote control)●红外光电开关(Optoelectronic switch)●烟感(Smoke detector)●智能家电(Smart Appliances)●储物柜感应模块(Locker sensor)●红外应用系统(Infrared applied system)●触摸开关(Touch switch)包装方式Packing Quantity Specification●500PCS/袋，5袋/小盒，10小盒/箱(500PCS/1Bag，5Bags/1Box，10Boxes/1Carton)一、外形图Outline dimensions ：Notes:1.All dimensions are in mm,tolerance is ±0.25unless otherwise noted.2.An epoxy meniscus way extend about 1.5mm down the leads.3.Burr around bottom of epoxy may be 0.5mm Max.※备注：承认书之编号和型号可用于查询，客户如有需要，请提供相应的编号和型号。

IR333C-F-AFeatures․High reliability․High radiant intensity․Peak wavelength λp=940nm․2.54mm Lead spacing․Low forward voltage․Pb Free․This product itself will remain within RoHS compliant version.Description․EVERLIGHT’s Infrared Emitting Diode (IR333C-F-A) is ahigh intensity diode , molded in a water clear blue transparent plastic package.․The device is spectrally matched with phototransistor , photodiodeand infrared receiver module.Applications․Free air transmission system․Infrared remote control units with high power requirement․Smoke detector․Infrared applied systemDevice Selection GuideChipLens ColorMaterialsGaAlAs water clearAbsolute Maximum Ratings(Ta=25)Parameter Symbol Rating Unit Continuous Forward Current I F100mA Peak Forward Current(*1)I FP 1.0A Reverse Voltage V R5V Operating Temperature T opr-25 ~ +85 Storage Temperature T stg-40 ~ +100 Soldering Temperature(*2)T sol260 Power Dissipation at(or below)P d150mW 25 Free Air TemperatureNotes: *1:I FP Conditions--Pulse Width 100μs an d Duty 1%.*2:Soldering time 5 seconds.Electro-Optical Characteristics (Ta=25)ParameterSymbolMin.Typ.Max.Unit Condition 7.820-----I F =20mA -----100-----I F =100mA Radiant IntensityI e-----1000----- mW/srI F =1A Pulse Width 100μs and Duty 1%Peak Wavelength λp -----940-----nm I F =20mA Spectral BandwidthΔλ-----45-----nm I F =20mA ----- 1.2 1.5I F =20mA ----- 1.4 1.7I F =100mAForward VoltageVF----- 2.6 4.0V I F =1A Pulse Width 100μs and Dut y 1%Reverse Current I R --------10uA V R =5V View Angle2θ1/2----20----deg I F =20mARankCondition:I F =20mA Unit mW/sr Bin Number M N P Q R Min 7.811.015.021.030.0Max12.517.624.034.048.0104700725750775800825850875900925950975100010251050 0.0Wavelength (nm)-20402006010080Peak Emission Wavelength vs. Ambient Temperature Forward Current vs. Forward Voltage103Package DimensionNote: Tolerances unless dimensions ±0.25mmPacking Specification■ Anti-electrostatic bag ■ Inner Carton ■ Outside Carton ■ Packing QuantityNotes1.Lead Forming ⏹During lead formation, the leads should be bent at a point at least 3mm from the base of the epoxy bulb.⏹Lead forming should be done before soldering.⏹Avoid stressing the LED package during leads forming. The stress to the base may damage the LED’s characteristics or it may break the LEDs.⏹Cut the LED lead frames at room temperature. Cutting the lead frames at high temperatures may cause failure of the LEDs.⏹When mounting the LEDs onto a PCB, the PCB holes must be aligned exactly with the lead position of the LED. If the LEDs are mounted with stress at the leads, it causes deterioration of the epoxy resin and this will degrade the LEDs.2.Storage ⏹The LEDs should be stored at 30°C or less and 70%RH or less after being shipped from Everlight and the storage life limitsare 3 months. If the LEDs are stored for 3 months or more, they can be stored for a year in a sealed container with a nitrogen atmosphere and moisture absorbent material.⏹Please avoid rapid transitions in ambient temperature, especially, in high humidity environments where condensation can occur.3.Soldering ⏹Careful attention should be paid during soldering. When soldering, leave more then 3mm from solder joint to epoxy bulb,and soldering beyond the base of the tie bar is recommended.⏹Recommended soldering conditions:Hand SolderingDIP SolderingTemp. at tip of iron300 Max. (30W Max.)Preheat temp.100 Max. (60 sec Max.)Soldering time 3 sec Max.Bath temp. & time 260 Max., 5 sec Max Distance 3mm Min.(From solderjoint to epoxy bulb)Distance 3mm Min. (From solderjoint to epoxy bulb)⏹Recommended soldering profile⏹Avoiding applying any stress to the lead frame while the LEDs are at high temperature particularly when soldering.⏹Dip and hand soldering should not be done more than one time⏹After soldering the LEDs, the epoxy bulb should be protected from mechanical shock or vibration until the LEDs return toroom temperature.⏹ A rapid-rate process is not recommended for cooling the LEDs down from the peak temperature.Although the recommended soldering conditions are specified in the above table, dip or hand soldering at the lowestpossible temperature is desirable for the LEDs.⏹Wave soldering parameter must be set and maintain according to recommended temperature and dwell time in the solderwave.4.Cleaning⏹When necessary, cleaning should occur only with isopropyl alcohol at room temperature for a duration of no more thanone minute. Dry at room temperature before use.⏹Do not clean the LEDs by the ultrasonic. When it is absolutely necessary, the influence of ultrasonic cleaning on the LEDsdepends on factors such as ultrasonic power and the assembled condition. Ultrasonic cleaning shall be pre-qualified to ensure this will not cause damage to the LED5.Heat Management⏹Heat management of LEDs must be taken into consideration during the design stage of LED application. The currentshould be de-rated appropriately by referring to the de-rating curve found in each product specification.⏹The temperature surrounding the LED in the application should be controlled. Please refer to the data sheet de-ratingcurve.6.ESD (Electrostatic Discharge)⏹Electrostatic discharge (ESD) or surge current (EOS) can damage LEDs.⏹An ESD wrist strap, ESD shoe strap or antistatic gloves must be worn whenever handling LEDs.⏹All devices, equipment and machinery must be properly grounded.⏹Use ion blower to neutralize the static charge which might have built up on surface of the LEDs plastic lens as a result offriction between LEDs during storage and handing.7.Other⏹Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for abovespecification.⏹When using this product, please observe the absolute maximum ratings and the instructions for using outlined in thesespecification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not complywith the absolute maximum ratings and the instructions included in these specification sheets.⏹These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’treproduce or cause anyone to reproduce them without EVERLIGHT’s consent.。

现货供应射线机XXG-3005定向陶瓷管简介射线机是一种应用广泛的医疗设备，通过发射高能射线来治疗各种癌症和肿瘤。

而射线机的核心部件就是定向陶瓷管，它能够产生出高能射线并将其定向发射。

这里我们介绍一款现货供应的射线机定向陶瓷管——XXG-3005。

产品特点1. 高效发射XXG-3005采用最新的技术制造，在射线发射效率上达到了极高的水平。

其定向陶瓷管内部经过多次加工处理，使射线能够稳定、高效地发射出来。

这使得XXG-3005的效率比同类其他产品更高，能够大大缩短治疗时间。

2. 精准定向定向陶瓷管是射线机发射射线的核心组件，而XXG-3005在这方面也有着让人放心的特点。

它的定向能力非常精准，能够将射线直接瞄准目标区域，从而最大限度地减少对正常组织的伤害。

这种精确的定向技术非常适合癌症和肿瘤等疾病的治疗。

3. 适用范围广泛射线机一般用于治疗各种肿瘤和癌症，而XXG-3005的功效和适用范围非常广泛。

它可以应用于各种恶性肿瘤的治疗，如脑肿瘤、乳腺癌、肺癌、淋巴结转移等等。

同时，它也可以用于其他治疗，如放射性同位素治疗等。

4. 维护保养简单XXG-3005的制造采用了高品质材料，非常耐磨、耐用。

同时，它的维护保养也非常简单，只需定期进行清洁和检查即可，降低了使用成本。

这也是XXG-3005备受用户喜爱的一个原因。

使用建议XXG-3005是一款非常优秀的射线机定向陶瓷管，但是使用时还需要注意以下几点：1.操作需要进行人员培训：使用射线机需要经过专业培训，以保证使用者的安全和设备能够正常运行。

2.定期检查维护：虽然XXG-3005的维护管理简单，但是定期检查和维护是必须的，以确保射线机的正常运行和使用寿命。

3.安全防护措施要到位：射线机会产生出高强度的射线，因此在使用过程中需要加强防护措施。

工作人员必须佩戴防护服和头盔等防护设备，并保证医疗场所的低辐射环境。

售后服务我们会为每一个使用XXG-3005的用户提供完善的售后服务，包括设备的清洁、维护和修理，确保每一个用户都能够得到及时有效的支持和帮助。

1产品规格书Production Specification客户名称（Customer name）：产品名称（Production name）：3535IR 型号（Model）：M3535E1IRS9G12-850编号（Part number）：日期（Date）：客户确认CUSTOMER CONFIRMATION确认Confirmed by审核Checked by核准Approved by备注：请检测后签回贵司的宝贵意见，谢谢支持！Note:please sign back your valuable comments after testing,thank you for your support!2目录Catalog1.特性（Features ）2.应用范围（Applications ）3.成品外观尺寸（Package Dimensions ）4.最大额定值（Maximum rating）5.光电特性参数（Electro-optical characteristics ）6.典型光电参数曲线（Typical optical characteristics curves ）7.BIN 级参数（Bin sorting parameters）8.编带规格（Tape Specification ）9.包装方式（Packaging ）10.标签描述（Label description ）11.可靠度实验项目及条件（Reliability Test Items And Conditions ）12.使用注意事项（Use of caveats ）31.特性（Features ）◆封装尺寸3.5*3.5*2.5/1.67mm ◆采用陶瓷基板封装Encapsulation Size Ceramic substrate encapsulation ◆焊接方式：回流焊◆符合RoHS 标准Welding Method:Reflow soldering Compliance with RoHS standards ◆采用高可靠性封装能量稳定◆体积小、功耗低、指向性好High reliability packaging energy stabilizationSmall size,low powerconsumption,good directivity2.应用范围（Applications ）◆摄像头（视频拍摄）数位摄影，监控，美容，治疗皮肤病等Camera (video shooting),digital photography,surveillance,beauty,treatment of skin diseases,etc◆楼寓对讲，防盗报警，红外防水，非视觉光源等Building intercom,burglar alarm,infrared waterproof,non visual light source,etc3．成品外观尺寸（Package Dimensions）备注：1.所有尺寸单位均以mm 单位.Remarks:All units of size in mm units.2.在没有明确标注的情况下正负公差为0.1mmA positive and negative tolerance of 0.1mm without a clear indication.44.最大额定值（Maximum rating）(Ta=25℃)项目Project 缩写Symbol 额定值Rating 单位Unit 峰值正向电流Peak forward currentIFP 1000mA 光功率Optical power IV 450mW 反向电压Reverse voltageVR 5V 漏电流Leakage currentIR 10µA 工作温度working temperatureTopr –40～85℃存储温度Storage temperatureTstg 5～30℃焊接温度welding temperatureTsld回流焊240℃不超过30sReflow soldering 240℃not more than 30s手动焊接300℃不超过3sManual welding at 300℃for no more than 3S℃ESD 等级（HBM)ESD 4000V（脉冲宽度≤10ms,占空比≤0.1）（Pulse width ≤10ms,duty cycle ≤0.1）5.主要光电参数（Electro-optical characteristics ）(Ta=25℃)项目Project 符号Symbol 测试条件（mA）Test conditions最小值Min 典型值Typ 最大值Max 单位Unit 正向电压Forward voltageVF IF=350mA1.4-2.0V 正向电流Forward currentIF --7001000mA 光功率Optical power IV --450-mW 发光角度Viewing Angle2θ½IF=350mA -120°波长Peak wavelengthλp IF=350mA 845850855nm 热阻Thermal resistanceRIF=350mA- 4.5-℃/W56.曲型光电参数曲线（Typical optical characteristics curves ）Relationship between voltage and currentRelationship between current and opticalpowerThe relationship between current and power Relationship between current and peakwavelengthLuminous angle Spectralwavelength67.BIN 级参数（Bin sorting parameters）(1)正向电压Forward voltage VF(公差tolerance ：±0.05V@IF=350mA)8.编带规格（Tape Specification ）：800PCS/卷(800pcs /Reel)最小值min(V)最大值max(V)1.62.02.0 2.22.22.479.包装方式（Packaging）10.标签描述（Label description ）Please use 70-75degree dehumidification for more than 15hours.Please sub contract the light splitting products,thank you!深圳市银月光科技有限公司P/N:WL:Φe ：IF:VF:Lot ：Qty ：请使用70-75度除湿，时间15小时以上。

5mm Infrared With Special Forming LED ,T-1 3/4MODEL NO :IR333/F27Features :High radiant intensityPeak wavelength p=940nmView angle 20High reliability2.54mm Lead spacingDescription :EVERLIGHT’s Infrared Emitting Diode (IR333/F27) is a high intensity diode, moldedin a blue transparent plastic package.The device is spectrally matched with phototransistor, photodiode and infrared receiver module.Applications :Free air transmission systemOptoelectronic switchFloppy disk driveInfrared applied systemSmoke detectorCHIPLENS COLORPART NO.MATERIALIR GaAlAs Blue5mm Infrared With Special Forming LED ,T-1 3/4MODEL NO :IR333/F27Package Dimensions :3.Lead spacing is measured where the lead emerge from the package.4.Lens color Blue tranaparent.5.Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for above specification.6.These specification sheets include materials protected under copyright of EVERLIGHTcorporation . Please don’t reproduce or cause anyone to reproduce them withoutEVERLIGHT’s consent.7.When using this product , please observe the absolute maximum ratings and theinstructions for use outlined in these specification sheets. EVERIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets.5mm Infrared With Special Forming LED ,T-1 3/4MODEL NO :IR333/F27Absolute Maximum Ratings at Ta = 25ParameterSymbol Rating Unit NoticeContinuous Forward Current I F 50mA Peak Forward CurrentPulse width=100 s, Duty cycle=1 I FP 1.0A Reverse Voltage V R 5V Operating Temperature Topr -40 ~ +85 Storage Temperature Tstg -40 ~ +85 Soldering TemperatureTsol 260 Power Dissipation at(or below)25 Free Air TemperaturePd100Electronic Optical Characteristics :ParameterSymbolMin.Typ.Max.UnitCondition7.820----I F =20mA----85----I F =100mA,tp=100 s, t P /T=0.01Radiant Intensity Ee ----750----mW/sr I F =1A,tp=100 s, t P /T=0.01Peak Wavelength P ----940----nm I F =20mA Spectral Bandwidth----45----nmI F =20mA ---- 1.2 1.5I F =20mA---- 1.4 1.85I F =100mA,tp=100 s, t P /T=0.01Forward Voltage V F ---- 2.6 4.0V I F =1A,tp=100 s, t P /T=0.01Reverse Current I R --------10 A V R =5V View in Angle2 1/2----20----degI F =20mA5mm Infrared With Special Forming LED ,T-1 3/4EVERLIGHT ELECTRONICS CO., LTD.DEVICE NUMBER : DIR-033-082 REV : 1.1ECN : PAGE : 6/85mm Infrared With Special Forming LED ,T-1 3/4MODEL NO :IR333/F27Reliability Test Item And ConditionThe reliability of products shall be satisfied with items listed below.Confidence level:90%5mm Infrared With Special Forming LED ,T-1 3/4 MODEL NO :IR333/F27Test Method For Power :=20 mACondition : IFTest Item : Radiant IntensityUnit : mW/sr5mm Infrared With Special Forming LED ,T-1 3/4 MODEL NO :IR333/F27Packing Quantity Specification1. 500 Pcs/1Bag 6 Bags/1Box2. 10 Boxes/1CartonIR333/F27。

SHARP最大最大隔离电流输出电压输出电压PC123150mA 70V 5000Vrms PC123N 150mA 70V 5000Vrms PC357N 150mA 80V 3750Vrms PC410L150mA-3750Vrms型号通道PC4521150mA 350V 3750Vrms PC814X 150mA 80V 5000Vrms PC844X 450mA 80V 5000Vrms PC817X 150mA 80V 5000Vrms PC900150mA -5000Vrms PC923L 1500mA -5000Vrms PC9291100mA -4000VrmsNEC最大最大隔离电流输出电压输出电压PS2501-1150mA 80V 5000Vrms PS2501-2250mA 80V 5000Vrms PS2501-4450mA 80V 5000Vrms PS2561-1150mA 80V 5000Vrms PS2701-1180mA 40V 3750Vrms PS2703-1130mA 120V 3750Vrms PS2705-1180mA 40V 3750Vrms PS2801-1130mA 70V / 80V 2500Vrms PS2801-4430mA 70V / 80V 2500Vrms PS2805-1130mA70V / 80V2500VrmsAVAGO最大最大隔离电流输出电压输出电压6N137150mA -2500Vrms HCNR2001--5000Vrms HCNR2011--5000Vrms HCPL-0600150mA -2500Vrms HCPL-0601150mA -3750Vrms HCPL-0611150mA -3750Vrms HCPL-450418mA 20V 3750Vrms HCPL-4506115mA -3750Vrms HCPL-817150mA70V5000VrmsFAIRCHILD最大最大隔离型号通道型号通道-[Min] 20%@16mA-[Min] None：50%@5mA；GB：100%@5mA[Min] None：50%@1mA；BV：100%@1mA[Min] 1000%@1mA[Min] GB：100%@5mA；None：50%@5mA [Min] Y：50%；GB/GR/None：100%；BL：200%-[Min] None：50%@5mA；GB：100%@5mA[Min] None：50%@5mA；GB：100%@5mA [Min] Y/None：50%；YH：75%；GB/GR/GRL：100%；BL：200%[Min] None：50%；GB：100%[Min] Y/None：50%；GB/GR：100%；BL：200%[Min] Y/None：50%；GB/GR：100%；BL：200%[Min] A：50%；GB：100%[Min] A：50%；GB：100%[Min] 20%@16mA-[Min] 1000%@1mA[Min] None：50%；GB：100%[Min] None：50%；GB：100%[Min] None：50%；GB：100%[Min] Y/None：50%；GB/GR：100%；BL：200%[Min] A：50%；GB：100%[Min] A：50%；GB：100%[Min] 1000%@1mA[Min] 1000%@1mA[Min] 1000%@1mA[Min] 50%@5mA[Min] 50%@5mA电流转换率50%-400%@5mA50%-400%@5mA50%-600%@5mA-[Min] 20%@1mA[Min] 20%@1mA[Min] 50%@5mA[Min] 80%@5mA[Min] 80%@5mA[Min] 80%@5mA电流转换率转换率范围：80%-600%@5mA，详见PDF 转换率范围：80%-600%@5mA，详见PDF 转换率范围：80%-600%@5mA，详见PDF 转换率范围：80%-400%@5mA，详见PDF 转换率范围：50%-300%@5mA，详见PDF 转换率范围：50%-400%@5mA，详见PDF 转换率范围：50%-300%@5mA，详见PDF 转换率范围：80%-600%@5mA，详见PDF 转换率范围：80%-600%@5mA，详见PDF 转换率范围：80%-600%@5mA，详见PDF电流转换率-[Min] 0.25%@10mA[Min] 0.36%@10mA---[Min] 21%@16mA-[Min] 50%@5mA电流转换率[Min] 20%@10mA[Min] 20%@10mA[Min] 10%@10mA[Min] 10%@10mA[Min] 100%@10mA[Min] 500%@10mA[Min] 500%@10mA[Min] 20%@10mA，40%@10mA，100%@10mA 多种[Min] 100%@10mA[Min] 7%@16mA[Min] 19%@16mA-[Min] 部分型号：300%@1.6mA 部分型号：400%@500μA[Min] 部分型号：300%@1.6mA 部分型号：400%@500μA高速，tpHL=0.8μs,tpLH=2μs(max)高速，转换速度：10MBd高速，tpHL=0.8μs,tpLH=0.8μs(max)高速，转换速度：10MBd高速，转换时间：0.5us高速，tpHL,tpLH=0.1μs(Min)=0.8μs(Max)其它描述高速，转换速度：10MBd高速，tPLH,tPHL:MAX.0.5μs高速，tPLH,tPHL:MAX.0.5μs其它描述其它描述高速，10MBd高速，10MBd高速，10MBd高速，10MBdHCPL-4504-020 and HCNW4504：5000Vrms HCPL-4506-020 and HCNW4506：5000Vrms其它描述高速，10MBd。