串口电平转换芯片数据手册SP3222_3232E

深圳市技新电子科技有限公司www.jixin.pro TTL-RS232SP3232EEN-L/TR V1.0.0.0 TTL-RS232模块SP3232学习手册1、模块介绍TTL-RS232模块以SP3232EEN芯片为核心，用于实现TTL/COMS电平和RS232电平的相互转换。

工作电压宽，兼容3.3V和5V系统。

TTL/CMOS数据输入/输出端均有LED指示数据收发状态。

工作电压：3.0V~5.5V芯片功耗：0.3mA（无负载,AMB=+25°,VCC=3.3V）最高波特率：235Kbps（RL=3kΩ，CL=1000pF）接口：DB9_母头，使用方便模块接口引脚功能表：Symbol（符号）Type（类型）Description（描述）VCC电源电源电压GND电源地R1OUT信号输出（对模块而言）RS232电平转TTL/CMOS电平，输出TTL/CMOS电平T1IN信号输入（对模块而言）TTL/CMOS电平转RS232电平，输入TTL/CMOS电平注：⏹VCC、GND：本模块需外部电源供电：3.0V~5.5V⏹R1OUT：DB9的3脚（R1IN）输入的RS232电平，转换为对应的TTL/CMOS电平，从此管脚输出⏹T1IN：此管脚接收TTL/CMOS电平（输入），转换为RS232电平，从DB9的2脚（T1OUT）输出 LED指示灯说明：⏹LED1：电源指示灯。

灯亮表明模块供电正常。

⏹LED2：RS232电平转换为TTL/CMOS电平的状态指示灯。

（灯闪表示正在进行数据通信）⏹LED3：TTL/CMOS电平转换为RS232电平的状态指示灯。

（灯闪表示正在进行数据通信）丝印说明：⏹元器件附近的“字符+数字”表示元器件编号⏹焊盘位置附近的“字符串”表示接口的引脚功能⏹“箭头”表示数据流的传输方向⏹DB9母头的焊盘位置附近的“数字”表示DB9母头的接口引脚标号DB9母头接口：⏹2脚（T1OUT）：将转换后的RS232电平输出⏹3脚（R1IN）：输入将要转换的TTL/CMOS电平⏹5脚（GND）：电压参考平面（地）⏹注：DB9母头只有这3个管脚有用，其余都为悬空状态深圳市技新电子科技有限公司www.jixin.pro TTL-RS232SP3232EEN-L/TR V1.0.0.0 焊盘C6、C7的作用：⏹C6并联在T1OUT（DB9母头的2脚）和地之间、C7并联在R1IN（DB9母头的3脚）和地之间。

3232E中文资料Anasys Semiconductor, Inc.High ESD-Protected, Low Power, 3.0V to 5.5V ,Single Supply RS-232 TransceiversMAX3222E/3232EGeneral DescriptionApplicationsFeaturesNotebook, Sub notebook, and Palmtop Computers Battery-Powered / Hand-Held Equipment POS terminal / Intelligent Network Switch DMM / Printers Smart Phones xDSL Modems The MAX3222E/MAX3232E are 2 driver, 2 receiver RS-232 transceiver solutions intended for portable or hand-held applications, features low power consumption, high data-rate capabilities, and enhanced ESD protection. The ESD tolerance of the MAX3222E/3232E devices is over ±15kV for both human body model and IEC1000-4-2 air discharge test methods.A low-dropout transmitter output stage delivers true RS-232 performance from a +3.0V to +5.5V power supply, using an internal dual charge pump. The charge pump requires only four small 0.1μF capacitors for operation from a +3.3V supply. Each device guarantees operation at data rates of 250kbps while maintaining RS-232 output levels.The MAX3222E features a 1μA shutdown mode that reduces power consumption in battery-powered portable systems. The MAX3222E receivers remain active in shutdown mode, allowing monitoring o f external devices while consuming only 1μA of supply current. The MAX3222E and MAX3232E are pin, package, and functionally compatible with the industry-standard MAX242and MAX232, respectively.Meets true EIA/TIA-232-F Standards from a +3.0V to +5.5V power supply Interoperable with EIA/TIA - 232 and adheres to EIA/TIA - 562 1μA Low-Power Shutdown (MAX3222E) Enhanced ESD Specifications:15kV Human Body Model 15kV IEC1000-4-2 Air Discharge 8kV IEC1000-4-2 Contact Discharge 250 kbps Minimum Transmission RateIdeal for Handheld, Battery Operated Applications Latch up FreeGuaranteed 30V/μs Max Slew Rate BiCMOS TechnologyOrdering InformationAbsolute Maximum RatingsStresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.Pin DescriptionElectrical Characteristics(VCC = +3V to +5.5V, C1-C4 = 0.1μF, T A = T MIN to T MAX, unless otherwise noted. Typical values are at T A = +25°C.)Typical Operating CharacteristicsAnasys Semiconductor, Inc.(VCC = +3.3V, 250kbps data rate, 0.1μF capacitors, all transmitters loaded with 3k ? and CL, TA = +25°C, unless otherwise noted.)T1 TRANSMITTING AT 250kbps T2 TRANSMITTING AT 15.6kbpsTypical Operating CircuitsC 3C 4Detailed DescriptionAnasys Semiconductor, Inc.Dual Charge-Pump Voltage ConverterThe MAX3222E/MAX3232Es’ internal power supply consists of a regulated dual charge pump that provides output voltages of +5.5V (doubling charge pump) and -5.5V (inverting charge pump) over the +3.0V to +5.5V VCC range. The charge pump operates in discontinuous mode; if the output voltages are less than 5.5V, the charge pump is enabled, and if the outputvoltages exceed 5.5V, the charge pump is disabled. Each charge pump requires a flying capacitor (C1, C2) and a storage capacitor (C3, C4) to generate the V+ and V- supplies. RS-232 Transmitters The transmitters are inverting level translators that convert TTL/CMOS-logic levels to ±5V EIA/TIA-232 compliant levels. The MAX3222E/MAX3232E transmitters guarantee a 250kbps data rate with worst-case loads of 3K Ω parallel with 1000pF. Transmitters can be paralleled to drive multiple receivers. The MAX3222E transmitters are disabled and the outputs are forced into ahigh-impedance state when the device is in shutdown mode (SHDN =GND). The MAX3222E/MAX3232E permits the outputs to be driven up to ±12V in shutdown. RS-232 ReceiversThe receivers convert RS-232 signals to CMOS-logic output levels. The MAX3222E receivers have inverting three-state outputs. Drive EN high to place the receiver(s) into a high impedance state. Receivers can be either active or inactive in shutdown. MAX3222ESupply current falls to less than 1μA in shutdown mode (= GND). When shutdown, the device’s charge pumps are shut off, V+ is pulled down to VCC, V- is pulled to ground, and the transmitter outputs are disabled (high impedance). The time required to recov er from shutdown is typically 100μs. Connect SHDN to VCC if shutdown mode is not used. ±15kV ESD ProtectionESD-protection structures are incorporated to protect against electrostatic discharges encountered during handling and assembly. The driver outputs and receiver inputs of the MAX3222E/MAX3232E have extra protection against staticelectricity. The ESD structures withstand high ESD in all states:normal operation, shutdown, and powered down. After an ESD event, Circuits keep working without latch up. ESD protection can be tested in various ways; the transmitter outputs and receiver inputs for the MAX3222E/MAX3232E are characterized for protection to the following limits: ? ±15kV using the Human Body Model±8kV using the Contact Discharge method specified in IEC 1000-4-2 ? ±15kV using the Air-Gap Discharge method specified in IEC 1000-4-2Anasys Semiconductor, Inc.Application InformationCapacitor SelectionThe capacitor type used for C1–C4 is not critical for proper operation; polarized or non-polarized capacitors can be used. The charge pump requires 0.1μF capacitors for 3.3V operation. Increasing the capacitor values (e.g., by a factor of 2) reduces ripple on the transmitter outputs and slightly reduces power consumption. C2, C3, and C4 can be increased without changing C1’s value. When using the minimum required capacitor values, make sure the capacitor value does not degrade excessively with temperature. If in doubt, use capacitors with a larger nominal value. The capacitor’s equivalent series resistanc e (ESR), which usually rises at low temperatures, influences the amount of ripple on V+ and V- output voltages.Power-Supply DecouplingIn most circumstances, a 0.1μF VCC bypass capacitor is adequate. In applications sensitive to power-supply noise, use a capacitor of the same value as charge pump capacitor C1. Connect bypass capacitors as close to the IC as possible.Operation Down to 2.7VTransmitter outputs meet EIA/TIA-562 levels of ±3.7V with supply voltages as low as 2.7V. Transmitter Outputs Recovering from ShutdownWhen MAX3222E’s two transmitter outputs were recovering from shutdown mode, the two transmitter outputs are shown going to opposite RS-232 levels (one transmitter input is high; the other is low) as they become active. Each transmitter is loaded with 3K resistor in parallel with 2500pF. The transmitter outputs display no ringing or undesirable transients as they come out of shutdown. Note that the transmitters are enabled only when the magnitude of V- exceeds approximately -3.0V. Interconnection with 3V and 5V LogicThe MAX3222E/MAX3232E can directly interface with various 3V and 5V logic families, including ACT and HCT CMOS.。

RS-232收发器接口芯片SP3223E／3243E的原理及应用摘要：SP3223E／3243E是SIPEX公司生产的RS-232收发器接口芯片。

该器件内部含有一个高效电荷泵，可在单＋3.0Ｖ～＋5.5Ｖ电源下产生±5.5Ｖ的ＲＳ－232电平，并支持EIA／TIA－232和ＩTU－TV.28／Ｖ.２４通信协议，因而可用于笔记本电脑等便携式设备。

文章分析了SP3223E／3243E的结构原理和主要特点，给出了它的典型应用电路。

关键词：电荷泵；自动上线；驱动器；收发器１概述ＳＰ３２２３Ｅ／３２４３Ｅ是ＳＩＰＥＸ公司生产的ＲＳ－２３２收发器，它支持ＥＩＡ／ＴＩＡ－２３２和ＩＴＵ－ＴＶ．２８／Ｖ．２４通信协议，适用于便携式设备使用（如笔记本电脑及ＰＤＡ）。

ＳＰ３２２３Ｅ／３２４３Ｅ内有一个高效电荷泵，可在单＋３．０Ｖ～＋５．５Ｖ电源下产生±５．５Ｖ的ＲＳ－２３２电平，该技术已申请了美国专利（专利号为Ｕ．Ｓ．－－５ ３０６ ９５４）。

满负载时，ＳＰ３２２３Ｅ／３２４３Ｅ器件可工作于２３５ｋｂｐｓ的数据传输率。

３．３Ｖ时仅需０．１μＦ的电容。

ＳＰ３２２３Ｅ是一个双驱动器／双接收器芯片，ＳＰ３２４３Ｅ则是一个三驱动器／五接收器芯片，是笔记本电脑或ＰＤＡ的理想器件。

ＳＰ３２４３Ｅ包含一个总是处于激活状态的补充接收器，可在关断状态下监控外设（如调制解调器）。

由于具有自动上线特性，因此，当其与一个相关外设之间接上ＲＳ－２３２电缆并处于工作状态下时，设备会自动醒来。

否则，如果电流不足１ｍＡ，设备会自动关断。

ＳＰ３２４３Ｅ包含一个补充接收器，当电源断开时，该接收器可保护ＵＡＲＴ或串行控制器芯片。

ＳＰ３２２３Ｅ和ＳＰ３２４３Ｅ是敏感电源设计的理想选择。

ＳＰ３２２３Ｅ和ＳＰ３２４３Ｅ的自动上线电路减少了电源电流降到１ｍＡ以下的可能性。

在大多数便携式应用场合，ＲＳ－２３２电缆可被断开或是将外设关闭。

在上述情况下，其内部的电荷泵和驱动器也会被关闭。

MAX3232电平转换原理图
RS232TO TTL 通讯模块
实现RS232到TTL数据转换。

芯片采用MAX3232适用电压3V-5.5V,具有ESD保护功能、支持流控制、零延时自动收发转换和波特率自适应特点，即插即用，稳定可靠。

主要资源：
一、DB9母头RS232接口带流控功能可直接接电脑
二、2.54排针RS232接口带流控功能可替代DB9接头
三、3个指示灯分别是电源指示灯、数据收指示灯、数据发指示灯
四、2.54排针TTL接口带流控功能可直接接TTL设备
淘宝网站
https:///?spm=2013.1.1000126.d 21.lOnOC1
以MCU单片机TTL到PC台式机RS232数据通信为例
1、PC台式机接DB9接口
2、MCU通过杜邦线接排针P1接口
P1接口说明
1GND接GND信号流向：GND
2VCC接3V-5V信号流向：VCC<--MCU_5V/MCU_3.3V
3RX接MCU_TX信号流向：PC_RX<--MAX3232<--RX
4TX接MCU_RX信号流向：PC_TX-->MAX3232-->TX
5CTS接MCU_RTS信号流向：PC_CTS<--MAX3232<--MCU_RTS 6RTS接MCU_CTS信号流向：PC_RTS-->MAX3232-->MCU_CTS
产品附件
1、RS232-TTL小板一个
2、杜邦线十根十种颜色
3、防静电自封袋一个
4、原理图
淘宝
https:///?spm=2013.1.1000126.d 21.lOnOC1产品图片。

RS-232收发器接口芯片SP3223E／3243E的原理及应用摘要：SP3223E／3243E是SIPEX公司生产的RS-232收发器接口芯片。

该器件内部含有一个高效电荷泵，可在单＋3.0Ｖ～＋5.5Ｖ电源下产生±5.5Ｖ的ＲＳ－232电平，并支持EIA／TIA－232和ＩTU－TV.28／Ｖ.２４通信协议，因而可用于笔记本电脑等便携式设备。

文章分析了SP3223E／3243E的结构原理和主要特点，给出了它的典型应用电路。

关键词：电荷泵；自动上线；驱动器；收发器１概述ＳＰ３２２３Ｅ／３２４３Ｅ是ＳＩＰＥＸ公司生产的ＲＳ－２３２收发器，它支持ＥＩＡ／ＴＩＡ－２３２和ＩＴＵ－ＴＶ．２８／Ｖ．２４通信协议，适用于便携式设备使用（如笔记本电脑及ＰＤＡ）。

ＳＰ３２２３Ｅ／３２４３Ｅ内有一个高效电荷泵，可在单＋３．０Ｖ～＋５．５Ｖ电源下产生±５．５Ｖ的ＲＳ－２３２电平，该技术已申请了美国专利（专利号为Ｕ．Ｓ．－－５ ３０６ ９５４）。

满负载时，ＳＰ３２２３Ｅ／３２４３Ｅ器件可工作于２３５ｋｂｐｓ的数据传输率。

３．３Ｖ时仅需０．１μＦ的电容。

ＳＰ３２２３Ｅ是一个双驱动器／双接收器芯片，ＳＰ３２４３Ｅ则是一个三驱动器／五接收器芯片，是笔记本电脑或ＰＤＡ的理想器件。

ＳＰ３２４３Ｅ包含一个总是处于激活状态的补充接收器，可在关断状态下监控外设（如调制解调器）。

由于具有自动上线特性，因此，当其与一个相关外设之间接上ＲＳ－２３２电缆并处于工作状态下时，设备会自动醒来。

否则，如果电流不足１ｍＡ，设备会自动关断。

ＳＰ３２４３Ｅ包含一个补充接收器，当电源断开时，该接收器可保护ＵＡＲＴ或串行控制器芯片。

ＳＰ３２２３Ｅ和ＳＰ３２４３Ｅ是敏感电源设计的理想选择。

ＳＰ３２２３Ｅ和ＳＰ３２４３Ｅ的自动上线电路减少了电源电流降到１ｍＡ以下的可能性。

在大多数便携式应用场合，ＲＳ－２３２电缆可被断开或是将外设关闭。

在上述情况下，其内部的电荷泵和驱动器也会被关闭。

3232芯片3232芯片是一种常用的集成电路（IC）芯片，由原产地德国的恩智浦半导体公司（NXP）研发和生产。

它属于高性能通用专用IC，主要应用在无线通讯、工业自动化、家电、消费电子等领域。

3232芯片采用32位ARM Cortex-M3架构，配备了多个外设和接口，包括通用串行总线（USB）、通用异步收发器（UART）和串行外设接口（SPI）等。

这些外设和接口的丰富功能使得3232芯片能够灵活地与其他设备进行通信和连接。

3232芯片拥有较高的运算速度和存储容量，可实现高效的数据处理和存储管理。

它的运行频率可达80MHz，可支持多种存储器类型，包括闪存（Flash）和随机存取存储器（RAM）。

这些特性使得3232芯片能够处理复杂的算法和大量的数据，满足不同应用场景的需求。

除了高性能和丰富的外设与接口，3232芯片还具有低功耗和较高的故障容忍能力。

它采用了低功耗设计，在不影响性能的情况下降低了功耗消耗，延长了电池寿命。

同时，它还具备较高的抗干扰能力和稳定性，能够在恶劣环境下稳定运行。

在无线通讯领域，3232芯片可应用于蓝牙、Wi-Fi和ZigBee等无线通信协议。

它可以作为通信模块的核心控制单元，实现数据的传输和处理。

在工业自动化领域，3232芯片可用于控制系统的设计与开发，实现自动控制和监测。

在家电和消费电子领域，3232芯片可以应用于电视、手机和智能家居设备等产品中，提供高性能和丰富功能的支持。

综上所述，3232芯片是一款功能强大、性能稳定的集成电路芯片。

其高性能、丰富的外设与接口、低功耗和较高的故障容忍能力使得它在无线通讯、工业自动化、家电和消费电子等领域有着广泛的应用前景。

DESCRIPTIONs Meets true EIA/TIA-232-F Standards from a +3.0V to +5.5V power supplys 235KBps Transmission Rate Under Load s 1µA Low-Power Shutdown with Receivers Active (SP3222E )s Interoperable with RS-232 down to +2.7V power sources Enhanced ESD Specifications: ±15kV Human Body Model±15kV IEC1000-4-2 Air Discharge ±8kV IEC1000-4-2 Contact DischargeThe SP3222E/3232E series is an RS-232 transceiver solution intended for portable or hand-held applications such as notebook or palmtop computers. The SP3222E/3232E series has a high-efficiency, charge-pump power supply that requires only 0.1µF capacitors in 3.3V operation. This charge pump allows the SP3222E/3232E series to deliver true RS-232performance from a single power supply ranging from +3.3V to +5.0V. The SP3222E/3232E are 2-driver/2-receiver devices. This series is ideal for portable or hand-held applications such as notebook or palmtop computers. The ESD tolerance of the SP3222E/3232E devices are over ±15kV for both Human Body Model and IEC1000-4-2 Air discharge test methods. The SP3222E device has a low-power shutdown mode where the devices' driver outputs and charge pumps are disabled. During shutdown, the supply current falls to less than 1µA.SELECTION TABLEL E D O M s e i l p p u S r e w o P 232-S R s r D e v i r 232-S R sr e v i e c e R l a n r e t x E st n e n o p m o C nw o d t u h S L T T a S -3e t t f o .o N s n i P 2223P S V 5.5+o t V 0.3+224s e Y s e Y 02,812323P S V5.5+o t V 0.3+224oN oN 61RE T E M A R A P .N I M .P Y T .X A M ST I N U SN O I T I D N O C S C I T S I R E T C A R A H C C D tn e r r u C y l p p u S 3.00.1A m T ,d a o l o n B M A 52+=o V ,C C C V 3.3=tn e r r u C y l p p u S n w o d t u h S 0.101µA,D N G =N D H S T B M A 52+=o V ,C C C V3.3+=S T U P T U O R E V I E C E R D N A S T U P N I C I G O L W O L d l o h s e r h T c i g o L t u p n I 8.0V 2e t o N ,N D H S ,N E ,N I x T H G I H d l o h s e r h T c i g o L t u p n I 0.24.2V V C C 2e t o N ,V 3.3=V C C 2e t o N ,V 0.5=t n e r r u C e g a k a e L t u p n I 10.0±0.1±µA ,N D H S ,N E ,N I x T T B M A 52+=o C t n e r r u C e g a k a e L t u p t u O 50.0±01±µA d e l b a s i d s r e v i e c e r W O L e g a t l o V t u p t u O 4.0V I T U O A m 6.1=H G I H e g a t l o V t u p t u O V C C 6.0-V C C 1.0-VI T U O Am 0.1-=S T U P T U O R E V I R D gn i w S e g a t l o V t u p t u O 0.5±4.5±Vk 3Ω,s t u p t u o r e v i r d l l a t a d n u o r g o t d a o l T B M A 52+=o Cec n a t s i s e R t u p t u O 003ΩV C C T ,V 0=-V =+V =T U O =+V 2t n e r r u C t i u c r i C -t r o h S t u p t u O 53±07±06±001±A m A m V T U O V 0=V T U O =+V51tn e r r u C e g a k a e L t u p t u O 52±µAV T U O =+V ,V 21C C de l b a s i d s r e v i r d ,V 5.5o t V 0=NOTE 1: V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V.ABSOLUTE MAXIMUM RATINGSThese are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability and cause permanent damage to the device.V CC ................................................................-0.3V to +6.0V V+ (NOTE 1)................................................-0.3V to +7.0V V- (NOTE 1)................................................+0.3V to -7.0V V+ + |V-| (NOTE 1)....................................................+13V I CC (DC V CC or GND current).................................±100mAInput VoltagesTxIN, EN .....................................................-0.3V to +6.0V RxIN.............................................................................±25V Output VoltagesTxOUT.....................................................................±13.2V RxOUT..............................................-0.3V to (V CC + 0.3V)Short-Circuit DurationTxOUT...............................................................Continuous Storage Temperature.................................-65°C to +150°C Power Dissipation Per Package20-pin SSOP (derate 9.25mW/o C above +70o C).......750mW 18-pin PDIP (derate 15.2mW/o C above +70o C)......1220mW 18-pin SOIC (derate 15.7mW/o C above +70o C)......1260mW 20-pin TSSOP (derate 11.1mW/o C above +70o C).....890mW 16-pin SSOP (derate 9.69mW/o C above +70o C).......775mW 16-pin PDIP (derate 14.3mW/o C above +70o C)......1150mW 16-pin Wide SOIC (derate 11.2mW/o C above +70o C)....900mW 16-pin TSSOP (derate 10.5mW/o C above +70o C).....850mWSPECIFICATIONSUnless otherwise noted, the following specifications apply for V CC = +3.0V to +5.0V with T AMB = T MIN to T MAXR E T E M A R A P .N I M .P Y T .X A M ST I N U SN O I T I D N O C S T U P N I R E V I E C E R e g n a R e g a t l o V t u p n I 51-51+V W O L d l o h s e r h T t u p n I 6.08.02.15.1V V C C V 3.3=V C C V 0.5=H G I H d l o h s e r h T t u p n I 5.18.14.24.2V V C C V 3.3=V C C V0.5=s i s e r e t s y H t u p n I 3.0V ec n a t s i s e R t u p n I 357k ΩS C I T S I R E T C A R A H C G N I M I T e t a R a t a D m u m i x a M 021532s p b k R L k 3=ΩC ,L g n i h c t i w s r e v i r d e n o ,F p 0001=y a l e D n o i t a g a p o r P r e v i r D 0.10.1µs µs t L H P R ,L K 3=ΩC ,L F p 0001=t H L P R ,L K 3=ΩC ,L F p 0001=y a l e D n o i t a g a p o r P r e v i e c e R 3.03.0µs t L H P C ,T U O x R o t N I x R ,L F p 051=t H L P C ,T U O x R o t N I x R ,L Fp 051=e m i T e l b a n E t u p t u O r e v i e c e R 002s n e m i T e l b a s i D t u p t u O r e v i e c e R 002s n w e k S r e v i r D 001005s n t |L H P t -H L P T ,|B M A 52=o C we k S r e v i e c e R 0020001s n t |L H P t -H L P |et a R w e l S n o i g e R -n o i t i s n a r T 03/V µsV C C R ,V 3.3=L K 3=ΩT ,B M A 52=o ,C V 0.3+o t V 0.3-m o r f n e k a t s t n e m e r u s a e m V0.3-o t V 0.3+r o SPECIFICATIONS (continued)Unless otherwise noted, the following specifications apply for V CC = +3.0V to +5.0V with T AMB = T MIN to T MAX .Typical Values apply at V CC = +3.3V or +5.0V and T AMB = 25o C.NOTE 2: Driver input hysteresis is typically 250mV.Capacitance for the SP3222 and the SP3232SP3222 and the SP3232Transmitting Data for the SP3222 and the SP3232TYPICAL PERFORMANCE CHARACTERISTICSUnless otherwise noted, the following performance characteristics apply for V CC = +3.3V, 235kbps data rates, all drivers loaded with 3k Ω, 0.1µF charge pump capacitors, and T AMB = +25°C.DESCRIPTIONThe SP3222E/3232E transceivers meet the EIA/TIA-232 and V.28/V.24 communication proto-cols and can be implemented in battery-pow-ered, portable, or hand-held applications such as notebook or palmtop computers. The SP3222E/3232E devices all feature Sipex's proprietary on-board charge pump circuitry that generates 2x V CC for RS-232 voltage levels from a single +3.0V to +5.5V power supply. This series is ideal for +3.3V-only systems, mixed +3.3V to +5.5V systems, or +5.0V-only systems that re-quire true RS-232 performance. The SP3222E/3232E series have drivers that operate at a typi-cal data rate of 235Kbps fully loaded.The SP3222E and SP3232E are 2-driver/2-re-ceiver devices ideal for portable or hand-held applications. The SP3222E features a 1µA shutdown mode that reduces power consump-tion and extends battery life in portable systems.Its receivers remain active in shutdown mode,allowing external devices such as modems to be monitored using only 1µA supply current.THEORY OF OPERATIONThe SP3222E/3232E series are made up of three basic circuit blocks: 1. Drivers, 2. Receivers,and 3. the Sipex proprietary charge pump.DriversThe drivers are inverting level transmitters that convert TTL or CMOS logic levels to ±5.0V EIA/TIA-232 levels inverted relative to the in-put logic levels. Typically, the RS-232 output voltage swing is ±5.5V with no load and at least ±5V minimum fully loaded. The driver outputs are protected against infinite short-circuits to ground without degradation in reliability. Driver outputs will meet EIA/TIA-562 levels of ±3.7V with supply voltages as low as 2.7V.The drivers typically can operate at a data rate of 235Kbps. The drivers can guarantee a data rate of 120Kbps fully loaded with 3K Ω in parallel with 1000pF, ensuring compatibility with PC-to-PC communication software.The slew rate of the driver output is internally limited to a maximum of 30V/µs in order to meet the EIA standards (EIA RS-232D 2.1.7, Para-graph 5). The transition of the loaded output from HIGH to LOW also meets the monotonic-ity requirements of the standard.The SP3222E/3232E drivers can maintain high data rates up to 240Kbps fully loaded. Figure 8shows a loopback test circuit used to test the RS-232 drivers. Figure 9 shows the test results of the loopback circuit with all drivers active at 120Kbps with RS-232 loads in parallel with 1000pF capacitors. Figure 10 shows the test results where one driver was active at 235Kbps and all drivers loaded with an RS-232 receiver in parallel with a 1000pF capacitor. A solid RS-232 data transmission rate of 120Kbps provides compatibility with many designs in personal computer peripherals and LAN applications.The SP3222E driver's output stages are turned off (tri-state) when the device is in shutdown mode. When the power is off, the SP3222E device permits the outputs to be driven up to ±12V. The driver's inputs do not have pull-up resistors. Designers should connect unused inputs to V CC or GND.In the shutdown mode, the supply current falls to less than 1µA, where SHDN = LOW. When the SP3222E device is shut down, the device's driver outputs are disabled (tri-stated) and the charge pumps are turned off with V+ pulled down to V CC and V- pulled to GND. The time required to exit shutdown is typically 100µs.Connect SHDN to V CC if the shutdown mode is not used. SHDN has no effect on RxOUT or RxOUTB. As they become active, the two driver outputs go to opposite RS-232 levels where one driver input is HIGH and the other LOW. Note that the drivers are enabled only when the magnitude of V- exceeds approximately 3V.ReceiversThe receivers convert EIA/TIA-232 levels to TTL or CMOS logic output levels. All receivers have an inverting tri-state output. These receiver outputs (RxOUT) are tri-stated when the enable control EN = HIGH. In the shutdown mode, the receivers can be active or inactive. EN has no effect on TxOUT. The truth table logic of the SP3222E/3232E driver and receiver outputs can be found in Table 2.Since receiver input is usually from a transmis-sion line where long cable lengths and system interference can degrade the signal, the inputs have a typical hysteresis margin of 300mV. This ensures that the receiver is virtually immune to noisy transmission lines. Should an input be left unconnected, a 5k Ω pulldown resistor to ground will commit the output of the receiver to a HIGH state.Charge PumpThe charge pump is a Sipex –patented design (5,306,954) and uses a unique approach com-pared to older less–efficient designs. The charge pump still requires four external capacitors, but uses a four–phase voltage shifting technique to attain symmetrical 5.5V power supplies. The internal power supply consists of a regulated dual charge pump that provides output voltages 5.5V regardless of the input voltage (V CC ) over the +3.0V to +5.5V range.In most circumstances, decoupling the power supply can be achieved adequately using a 0.1µF bypass capacitor at C5 (refer to Figures 6 and 7).In applications that are sensitive to power-sup-ply noise, decouple V CC to ground with a capaci-tor of the same value as charge-pump capacitor C1. Physically connect bypass capacitors as close to the IC as possible.The charge pumps operate in a discontinuous mode using an internal oscillator. If the output voltages are less than a magnitude of 5.5V, the charge pumps are enabled. If the output voltage exceed a magnitude of 5.5V, the charge pumps are disabled. This oscillator controls the four phases of the voltage shifting. A description of each phase follows.Phase 1— V SS charge storage — During this phase of the clock cycle, the positive side of capacitors C 1and C 2 are initially charged to V CC . C l + is then switched to GND and the charge in C 1– is trans-ferred to C 2–. Since C 2+ is connected to V CC , the voltage potential across capacitor C 2 is now 2times V CC .Phase 2— V SS transfer — Phase two of the clock con-nects the negative terminal of C 2 to the V SS storage capacitor and the positive terminal of C 2to GND. This transfers a negative generated voltage to C 3. This generated voltage is regu-lated to a minimum voltage of -5.5V. Simulta-neous with the transfer of the voltage to C 3, the positive side of capacitor C 1 is switched to V CC and the negative side is connected to GND.Phase 3— V DD charge storage — The third phase of the clock is identical to the first phase — the charge transferred in C 1 produces –V CC in the negative terminal of C 1, which is applied to the negative side of capacitor C 2. Since C 2+ is at V CC , the voltage potential across C 2 is 2 times V CC .Table 2. Truth Table Logic for Shutdown and Enable ControlN D H S N E T U O x T T U O x R 00e t a t s -i r T e v i t c A 01e t a t s -i r T e t a t s -i r T 10e v i t c A e v i t c A 11ev i t c A et a t s -i r TPhase 4— V DD transfer — The fourth phase of the clock connects the negative terminal of C 2 to GND,and transfers this positive generated voltage across C 2 to C 4, the V DD storage capacitor. This voltage is regulated to +5.5V. At this voltage,the internal oscillator is disabled. Simultaneous with the transfer of the voltage to C 4, the positive side of capacitor C 1 is switched to V CC and the negative side is connected to GND, allowing the charge pump cycle to begin again. The charge pump cycle will continue as long as the opera-tional conditions for the internal oscillator are present.Since both V + and V – are separately generated from V CC ; in a no–load condition V + and V – will be symmetrical. Older charge pump approaches that generate V – from V + will show a decrease in the magnitude of V – compared to V + due to the inherent inefficiencies in the design.The clock rate for the charge pump typically operates at 250kHz. The external capacitors can be as low as 0.1µF with a 16V breakdown voltage rating.ESD ToleranceThe SP3222E/3232E series incorporates ruggedized ESD cells on all driver output and receiver input pins. The ESD structure is improved over our previous family for more rugged applications and environments sensitive to electro-static discharges and associated transients. The improved ESD tolerance is at least ±15kV without damage nor latch-up.There are different methods of ESD testing applied:a) MIL-STD-883, Method 3015.7b) IEC1000-4-2 Air-Discharge c) IEC1000-4-2 Direct Contact The Human Body Model has been the generally accepted ESD testing method for semiconduc-tors. This method is also specified in MIL-STD-883, Method 3015.7 for ESD testing. The premise of this ESD test is to simulate the human body’spotential to store electro-static energy and discharge it to an integrated circuit. The simulation is performed by using a test model as shown in Figure 17. This method will test the IC’s capability to withstand an ESD transient during normal handling such as in manufacturing areas where the ICs tend to be handled frequently.The IEC-1000-4-2, formerly IEC801-2, is generally used for testing ESD on equipment and systems. For system manufacturers, they must guarantee a certain amount of ESD protection since the system itself is exposed to the outside environment and human presence.The premise with IEC1000-4-2 is that the system is required to withstand an amount of static electricity when ESD is applied to points and surfaces of the equipment that are accessible to personnel during normal usage.The transceiver IC receives most of the ESD current when the ESD source is applied to the connector pins. The test circuit for IEC1000-4-2is shown on Figure 18. There are two methods within IEC1000-4-2, the Air Discharge method and the Contact Discharge method.With the Air Discharge Method, an ESD voltage is applied to the equipment under test (EUT) through air. This simulates an electrically charged person ready to connect a cable onto the rear of the system only to find an unpleasant zap just before the person touches the back panel. The high energy potential on the person discharges through an arcing path to the rear panel of the system before he or she even touches the system. This energy, whether discharged directly or through air, is predominantly a function of the discharge current rather than the discharge voltage.Variables with an air discharge such as approach speed of the object carrying the ESD potential to the system and humidity will tend to change the discharge current. For example, the rise time of the discharge current varies with the approach speed.Figure 14. Charge Pump WaveformsThe Contact Discharge Method applies the ESD current directly to the EUT. This method was devised to reduce the unpredictability of the ESD arc. The discharge current rise time is constant since the energy is directly transferred without the air-gap arc. In situations such as hand held systems, the ESD charge can be directly discharged to the equipment from a person already holding the equipment. The current is transferred on to the keypad or the serial port of the equipment directly and then travels through the PCB and finally to the IC.The circuit models in Figures 17 and 18 represent the typical ESD testing circuits used for all three methods. The C S is initially charged with the DC power supply when the first switch (SW1) is on. Now that the capacitor is charged, the second switch (SW2) is on while SW1 switches off. The voltage stored in the capacitor is then applied through R S, the current limiting resistor, onto the device under test (DUT). In ESD tests, the SW2 switch is pulsed so that the device under test receives a duration of voltage.Figure 17. ESD Test Circuit for Human Body ModelFigure 18. ESD Test Circuit for IEC1000-4-2Figure 19. ESD Test Waveform for IEC1000-4-230AI ¥0A15At=30nst ¥t=0nsFor the Human Body Model, the current limiting resistor (R S ) and the source capacitor (C S ) are 1.5k Ω an 100pF, respectively. For IEC-1000-4-2, the current limiting resistor (R S )and the source capacitor (C S ) are 330Ω an 150pF,respectively.The higher C S value and lower R S value in the IEC1000-4-2 model are more stringent than the Human Body Model. The larger storage capacitor injects a higher voltage to the test point when SW2 is switched on. The lower current limiting resistor increases the current charge onto the test point.Device Pin Human Body IEC1000-4-2Tested Model Air Discharge Direct Contact LevelDriver Outputs ±15kV ±15kV ±8kV 4Receiver Inputs ±15kV±15kV±8kV4Table 3. Transceiver ESD Tolerance LevelsORDERING INFORMATIONModel Temperature Range Package Type SP3222ECA.............................................0˚C to +70˚C..........................................20-Pin SSOP SP3222ECP.............................................0˚C to +70˚C............................................18-Pin PDIP SP3222ECT.............................................0˚C to +70˚C...........................................18-Pin SOIC SP3222ECY.............................................0˚C to +70˚C........................................20-Pin TSSOP SP3222EEA............................................-40˚C to +85˚C........................................20-Pin SSOP SP3222EEP............................................-40˚C to +85˚C..........................................18-Pin PDIP SP3222EET............................................-40˚C to +85˚C.........................................18-Pin SOIC SP3222EEY............................................-40˚C to +85˚C......................................20-Pin TSSOP SP3232ECA.............................................0˚C to +70˚C..........................................16-Pin SSOP SP3232ECP.............................................0˚C to +70˚C............................................16-Pin PDIP SP3232ECT.............................................0˚C to +70˚C..................................16-Pin Wide SOIC SP3232ECY.............................................0˚C to +70˚C........................................16-Pin TSSOP SP3232EEA............................................-40˚C to +85˚C........................................16-Pin SSOP SP3232EEP............................................-40˚C to +85˚C..........................................16-Pin PDIP SP3232EET............................................-40˚C to +85˚C................................16-Pin Wide SOIC SP3232EEY............................................-40˚C to +85˚C......................................16-Pin TSSOP Please consult the factory for pricing and availability on a Tape-On-Reel option.This datasheet has been download from: Datasheets for electronics components.。

专芯发展•用芯服务•创芯未来产品特点●300µA 供电电流●确保最大120Kbps 数据传输率●确保最小3V/µs 压摆率●增强的ESD 规范：•IEC61000-4-2标准中±15kV 空气放电标准•IEC61000-4-2标准中±8kV 接触放电标准●可使用SOP-16和TSSOP-16封装产品应用●电池供电设备●掌上设备●周边设备●数据通信设备产品概述CBM3232是一种基于EIA/TIA-232标准和V.28/V.24标准的通讯接口，其供电电压为3.3V、具有低功耗需求，高数据传输率能力。

CBM3232有两个接收器和一个驱动器。

该设备可以确保以RS-232标准输出电平水平的情况下以120Kbps 数据传输率运行。

典型应用包括笔记本计算机、轻型便携掌上电脑、电池供电的设备、手持式设备、电子周边设备和打印机。

专芯发展•用芯服务•创芯未来目录产品特点..........................................................................................................................................1产品应用..........................................................................................................................................1产品概述..........................................................................................................................................1目录..................................................................................................................................................2引脚配置..........................................................................................................................................3引脚描述..........................................................................................................................................3绝对最大额定参数..........................................................................................................................4电气特性..........................................................................................................................................5逻辑输入电气特性..........................................................................................................................5发送电气特性..................................................................................................................................5应用电路..........................................................................................................................................7电容值(µF).....................................................................................................................................7典型运行特性..................................................................................................................................8静电保护..........................................................................................................................................9封装尺寸及结构............................................................................................................................12SOP-16......................................................................................................................................12TSSOP-16..................................................................................................................................13包装/订购信息.. (14)引脚配置引脚描述绝对最大额定值符号参数值单位V CC供电电压-0.3至6V V+复合终端电压(VCC-0.3)至7VV-反向终端电压0.3至-7VV++|V-|13V T IN发送器输入电压范围-0.3至6VR IN接收器输入电压范围±25V T OUT发送器输出电压范围±13.2V R OUT接收器输出电压范围-0.3to(VCC+0.3)VT a工作温度-40至85℃Ts储存温度-65至150℃t SHORT发送器输出短路接地时间持续*超出上述绝对最大额定值可能会导致器件永久性损坏。

MAX3222E/MAX3232E/MAX3237E/MAX3241E†/ MAX3246E的中文芯片手册±15kV ESD保护，电流低至10nA，3.0V至5.5V，高达1Mbps，的RS-232收发器概述该MAX3222E/MAX3232E/MAX3237E/MAX3241E /MAX3246E +3.0 V供电EIA/TIA-232和V.28/V.24通信接口器件具有低功耗，高数据速率的能力，以及增强的静电放电（ESD）保护。

增强型ESD结构保护所有发送器输出和接收器输入采用IEC 1000-4-2气隙放电，±8kV使用IEC 1000-4-2接触放电（MAX3246E为±9kV ），±15kV使用人体模型。

基于上述标准，MAX3237E的逻辑和接收I / O 引脚将被保护，而发射机输出引脚的保护利用人体模型±15kV的。

一个专有的低压差发送器输出级可以提供+3.0 V至+5.5 V电源真正的RS -232性能，利用内部双电荷泵。

充电泵仅需要四个工作在+3.3 V电源的0.1μF的小电容。

每款器件保证工作在250kbps数据速率下维持RS - 232输出电平。

该MAX3237E保证操作在250kbps在正常工作模式和1Mbps的中MegaBaud™工作模式，同时保持RS- 232兼容的输出电平。

MAX3222E/MAX3232E包括两个接收器和两个发射器。

MAX3222E具有1μA关断模式，可降低功耗的电池供电的便携式系统。

该MAX3222E接收器仍活跃在关断模式下，允许监控外部设备的同时仅需耗电1μA供应电流。

TheMAX3222E和MAX3232E的引脚，封装，并与业界标准的MAX242和MAX232，分别为功能兼容。

该MAX3241E/MAX3246E是专为笔记本电脑和小型笔记本电脑设计完整串口（3个驱动器/5个接收器）。

该MAX3237E（5驱动器/ 三个接收器），非常适合那些需要快速数据传输的外围设备。

sp3232中文资料_数据手册_参数SP3222E/SP3232ETrue +3.0V to +5.5V RS-232 TransceiversThe SP3222E/SP3232E series is an RS-232 transceiver solution intended for portable or hand-held applications such as notebook or palmtop computers. The SP3222E/SP3232E series has a high-efficiency, charge-pump power supply that requires only 0.1μF capaci -tors in 3.3V operation. This charge pump allows the SP3222E/SP3232E series to deliver true RS-232 performance from a single power supply ranging from +3.0V to +5.5V. The SP3222E/SP3232E are 2-driver/2-receiver devices. This series is ideal for portable or hand-held applications such as notebook or palmtop computers. The ESD tolerance of the SP3222E/SP3232E devices are over +/-15kV for both Human Body Model and IEC61000-4-2 Air discharge test methods. The SP3222E device has a low-power shutdown mode where thedevices' driver outputs and charge pumps are disabled. During shutdown, the supply current fal ls to less than 1μA.FEATURES■ Meets true EIA/TIA-232-F Standards from a +3.0V to +5.5V power supply ■ Minimum 120kbps Data Rate Under Full Load ■ 1μA Low Power Shutdown with Receivers active (SP3222E )■ Interoperable with RS-232 down to a +2.7V power source ■ Enhanced ESD Specifications: +15kV Human Body Model +15kV IEC61000-4-2 Air Discharge +8kV IEC61000-4-2 Contact DischargeDESCRIPTIONSELECTION TABLENow Available in Lead Free Packaging V-C1+V+C1-C2+C2-EN R2IN T2OUT nSOICMODELPower SuppliesRS-232 Drivers RS-232 Receivers External Components Shutdown TTL 3-State # of Pins SP3222E +3.0V to +5.5V 22 4 Capacitors Yes Yes 18, 20SP3232E +3.0V to +5.5V224 CapacitorsNoNo16Note: See page 6 for other pinoutsNOTE 1: V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V.These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in theoperation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability and cause permanent damage to the device.V CC .......................................................-0.3V to +6.0V V+ (NOTE 1).......................................-0.3V to +7.0V V- (NOTE 1)........................................+0.3V to -7.0V V+ + |V-| (NOTE 1)...........................................+13V I CC (DC V CC or GND current).........................+100mAInput VoltagesTxIN, EN, SHDN...........................-0.3V to Vcc + 0.3V RxIN...................................................................+15V Output Voltages TxOUT.............................................................+13.2VRxOUT, .......................................-0.3V to (V CC +0.3V)Short-Circuit DurationTxOUT....................................................Continuous Storage Temperature......................-65°C to +150°CUnless otherwise noted, the following specifications apply for V CC = +3.0V to +5.5V with T AMB = T MIN to T MAX ,Power Dissipation per package20-pin SSOP (derate 9.25mW/o C above +70o C)..............750mW 18-pin SOIC (derate 15.7mW/o C above +70o C)..............1260mW 20-pin TSSOP (derate 11.1mW/o C above +70o C).............890mW 16-pin SSOP (derate 9.69mW/o C above +70o C)...............775mW 16-pin PDIP (derate 14.3mW/o C above +70o C)...............1150mW 16-pin Wide SOIC (derate 11.2mW/o C above +70o C)........900mW 16-pin TSSOP (derate 10.5mW/o C above +70o C)..............850mW 16-pin nSOIC (derate 13.57mW/o C above +70o C)...........1086mWELECTRICAL CHARACTERISTICSPARAMETERMIN.TYP .MAX.UNITSCONDITIONSDC CHARACTERISTICS Supply Current0.3 1.0mA no load, V CC = 3.3V,T AMB = 25o C, TxIN = GND or V CC Shutdown Supply Current1.010μASHDN = GND, VCC = 3.3V,T AMB = 25o C, TxIN = Vcc or GND LOGIC INPUTS AND RECEIVER OUTPUTS Input Logic Threshold LOW 0.8V TxIN, EN, SHDN, Note 2Input Logic Threshold HIGH 2.0Vcc V Vcc = 3.3V, Note 2Input Logic Threshold HIGH 2.4Vcc V Vcc = 5.0V, Note 2Inp ut Leakage Current +0.01+1.0μA TxIN, EN, SHDN,T AMB = +25o C, V IN = 0V to V CCOutput Leakage Current +0.05+10μA Receivers disabled, V OUT = 0V to V CC Output Voltage LOW 0.4V I OUT = 1.6mA Output Voltage HIGH V CC -0.6V CC -0.1VI OUT = -1.0mADRIVER OUTPUTS Output Voltage Swing+5.0+5.4VAll driver outputs loaded with 3k? to GND, T AMB = +25o C ABSOLUTE MAXIMUM RATINGSUnless otherwise noted, the following specifications apply for V CC = +3.0V to +5.5V with T AMB = T MIN to T MAX , Typical values apply at V CC = +3.3V or +5.0V and T AMB = 25°C.ELECTRICAL CHARACTERISTICSPARAMETERMIN.TYP .MAX.UNITSCONDITIONSDRIVER OUTPUTS (continued)Output Resistance300V CC = V+ = V- = 0V, T OUT =+2V Output Short-Circuit Current +35+60mA V OUT = 0VOutput Leakage Current +25μAV CC = 0V or 3.0V to 5.5V, V OUT = +12V, Drivers disabled RECEIVER INPUTS Input Voltage Range -15+15V Input Threshold LOW 0.6 1.2V Vcc = 3.3V Input Threshold LOW 0.81.5V Vcc = 5.0V Input Threshold HIGH 1.52.4V Vcc =3.3V Input Threshold HIGH 1.8 2.4V Vcc = 5.0VInput Hysteresis 0.3V Input Resistance357k?TIMING CHARACTERISTICS Maximum Data Rate 120235kbps R L = 3k?, C L = 1000pF, one driver switching Driver Propagation Delay, t PHL 1.0μs R L = 3k?, C L = 1000pF Driver Propagatio n Delay, t PLH 1.0μs R L = 3k?, C L = 1000pF Receiver Propagation Delay, t PHL0.3μs Receiver input to Receiver output, C L = 150pF Receiver Propagation Delay, t PLH 0.3μs Receiver input to Receiver output, C L = 150pFReceiver Output Enable Time 200ns Receiver Output Disable Time 200ns Driver Skew 100500ns | t PHL - t PLH |, T AMB = 25°C Receiver Skew2001000ns | t PHL - t PLH |Transition-Region Slew Rate30V/μsVcc = 3.3V, R L = 3k?, C L = 1000pF, T AMB = 25°C,measurements taken from -3.0V to +3.0V or +3.0V to -3.0V NOTE 2: Driver input hysteresis is typically 250mV.Unless otherwise noted, the following performance characteristics apply for V CC = +3.3V, 120kbps data rate, all drivers loaded with 3k?, 0.1μF charge pump capacitors, and T AMB = +25°C.Figure 2. Slew Rate vs Load Capacitance for the SP3222E and SP3232EFigure 1. Transmitter Output Voltage vs LoadCapacitance for the SP3222E and SP3232E Figure 3. Supply Current VS. Load Capacitance when Transmitting DataTYPICAL PERFORMANCE CHARACTERISTICSNAME FUNCTIONPIN NUMBERSP3222E SP3232E SOIC SSOPTSSOPEN Receiver Enable. Apply Logic LOW for normal operation.Apply logic HIGH to disable the receiver outputs (high-Z state)11-C1+Positive terminal of the voltage doubler charge-pump capacitor221V++5.5V output generated by the charge pump332 C1-Negative terminal of the voltage doubler charge-pump capacitor443 C2+Positive terminal of the inverting charge-pump capacitor554 C2-Negative terminal of the inverting charge-pump capacitor665 V--5.5V output generated by the charge pump776 T1OUT RS-232 driver output.151714T2OUT RS-232 driver output.887R1IN RS-232 receiver input141613R2IN RS-232 receiver input998R1OUT TTL/CMOS receiver output131512R2OUT TTL/CMOS receiver output10109T1IN TTL/CMOS driver input121311T2IN TTL/CMOS driver input111210 GND Ground161815VCC+3.0V to +5.5V supply voltage171916SHDN Shutdown Control Input. Drive HIGH for normal device operation.Drive LOW to shutdown the drivers (high-Z output) and the on-board power supply1820-N.C.No Connect-11, 14-PIN FUNCTIONTable 1. Device Pin DescriptionPINOUTFigure 5. Pinout Configuration for the SP3232EThe SP3222E/SP3232E transceivers meet the EIA/TIA-232 and ITU-T V.28/V.24 communication protocols and can be imple-mented in battery-powered, portable, or hand-held applications such as notebook or palmtop computers. The SP3222E/SP3232E devices feature Exar's proprietary on-board charge pumpcircuitry tha t generates ±5.5V for RS-232 voltage levels from a single +3.0V to +5.5V power supply. This series is ideal for +3.3V-only systems, mixed +3.3V to +5.5V systems, or +5.0V-only systems that require true RS-232 performance. The SP3222E/SP3232E devices can operate at a typical data rate of 235kbps when fully loaded.The SP3222E and SP3232E are 2-driver/2- receiver devices ideal for portable or hand-held applications. The SP3222E features a 1μA shutdown mode that reduces power consumption and extends battery life in por-table systems. Its receivers remain active in shutdown mode, allowing external devices such as modems to be monitored using only 1μA supply current.THEORY OF OPERATIONThe SP3222E/SP3232E series is made up of three basic circuit blocks:1. Drivers2. Receivers3. The Exar proprietary charge pumpDriversThe drivers are inverting level transmitters that convert TTL or CMOS logic levels to +5.0V EIA/TIA-232 levels with an inverted sense relative to the input logic levels. Typically, the RS-232 output voltage swing is +5.4V with no load and +5V minimum fully loaded. The driver outputs are protected against infinite short-circuits to ground with-out degradation in reliability. Driver outputs will meet EIA/TIA-562 levels of +/-3.7V with supply voltages as low as 2.7V.The drivers can guarantee a data rate of 120kbps fully loaded with 3k? in parallelwith 1000pF, ensuring compatability withPC-to-PC communication software.The slew rate of the driver is internally limitedto a maximum of 30V/μs in order t o meet theEIA standards (EIA RS-232D 2.1.7, Para-graph 5). The transition of the loaded outputfrom HIGH to LOW also meet the monotonic-ity requirements of the standard.Figure 8 shows a loopback test circuitused to test the RS-232 Drivers. Figure9 shows the test results of the loopbackcircuit with all drivers active at 120kbpswith RS-232 loads in parallel with a1000pF capacitor. Figure 10 shows thetest results where one driver was activeat 235kbps and all drivers loaded with anRS-232 receiver in parallel with 1000pFcapacitors. A solid RS-232 data transmis-sion rate of 120kbps provides compatibilitywith many designs in personal computerperipherals and LAN applications.The SP3222E driver's output stages areturned off (tri-state) when the device is inshutdown mode. When the power is off, theSP3222E device permits the outputs to be driven up to +/-12V. The driver's inputs donot have pull-up resistors. Designers shouldconnect unused inputs to Vcc or GND.In the shutdown mode, the supply currentfalls to less than 1μA, where SHDN = LOW.When the SP3222E device is shut down,the device's driver outputs are disabled (tri-stated) and the charge pumps are turned offwith V+ pulled down to Vcc and V- pulled toGND. The time required to exit shutdown istypically 100μs. Connect SHDN to Vcc if theshutdown mode is not used.ReceiversThe Receivers convert EIA/TIA-232 levels to TTL or CMOS logic output levels. The SP3222E receivers have an inverting tri-state output. These receiver outputs (RxOUT) are tri-stated when the enable control EN = HIGH. In the shutdown mode, the receivers can be active or inactive. EN has no effect on TxOUT. The truth table logic of the SP3222E driver and receiver outputs can be found in Table 2.Since receiver input is usually from a trans -mission line where long cable lengths and system interference can degrade the signal, the inputs have a typical hysteresis margin of 300mV. This ensures that the receiver is virtually immune to noisy transmission lines. Should an input be left unconnected, an internal 5k? pulldown resistor to ground will commit the output of the receiver to a HIGH state.Table 2. SP3222E Truth Table Logic for Shutdown and Enable ControlCircuitCharge PumpThe charge pump is an Exar-patended design (U.S. 5,306,954) and uses a unique approach compared to older less-efficient designs. The charge pump still requires four external capacitors, but uses a four-phase voltage shifting technique to attain sym -metrical 5.5V power supplies. The internal power supply consists of a regulated dual charge pump that provides output voltages of +/-5.5V regardless of the input voltage (Vcc) over the +3.0V to +5.5V range.Figure 9. Loopback Test results at 120kbpsSHDN EN TxOUT RxOUT 00Tri-state Active 01Tri-state Tri-state 10Active Active 11ActiveTri-stateIn most circumstances, decoupling the power supply can be achieved adequately using a 0.1μF bypass capacitor at C5 (refer to figures 6 and 7). In applications that are sensitive to power-supply noise, decouple Vcc to ground with a capacitor of the same value as charge-pump capacitor C1. Physi -cally connect bypass capcitors as close to the IC as possible.The charge pump operates in a discontinu-ous mode using an internal oscillator. If the output voltages are less than a magnitude of 5.5V, the charge pump is enabled. If the output voltages exceed a magnitude of 5.5V, the charge pump is disabled. This oscillator controls the four phases of the voltage shift-ing. A description of each phase follows.Phase 1 — V SS charge storage — During this phase of the clock cycle, the positive side of capaci -tors C 1 and C 2 are initially charged to V CC . C l +is then switched to GND and the charge in C 1– is transferredto C 2–. Since C 2+ is con-nected to V CC , the voltage potential across capacitor C 2 is now 2 times V CC .Phase 2—V SS transfer —Phase two of the clock connects the negative terminal of C 2 to the V SS storage capacitor and the positive terminal of C 2 to GND. This transfers a negative gener-ated voltage to C 3. This generated voltage is regulated to a minimum voltage of -5.5V. Simultaneous with the transfer of the volt-age to C 3, the positive side of capacitor C 1 is switched to V CC and the negative side is connected to GND.Phase 3— V DD charge storage — The third phase of the clock is identical to the first phase —the charge transferred in C 1 produces –V CC in the negative terminal of C 1, which is applied to the negative side of capacitor C 2. Since C 2+ is at V CC , the voltage potential across C 2 is 2 times V CC .Phase 4— V DD transfer — The fourth phase of the clock connects the negative terminal of C 2 to GND, and transfers this positive generated voltage across C 2 to C 4, the V DD storage capacitor. This voltage is regulated to +5.5V. At this voltage, the in -ternal oscillator is disabled. Simultaneous with the transfer of the voltage to C 4, the positive side of capacitor C 1 is switched to V CC and the negative side is con-nected to GND, allowing the charge pump cycle to begin again. The charge pump cycle will continue as long as the operational conditions for the internal oscillator are present.Since both V + and V – are separately gener -ated from V CC , in a no–load condition V + and V – will be symmetrical. Older charge pump approaches that generate V – from V + will show adecrease in the magnitude of V – compared to V + due to the inherent inefficiencies in the design.The clock rate for the charge pump typically operates at greater than 250kHz. The exter -nal capacitors can be as low as 0.1μF with a 16V breakdown voltage rating.Figure 13. Charge Pump WaveformsESD TOLERANCEThe SP3222E/SP3232E series incorpo-rates ruggedized ESDcells on all driver output and receiver input pins. The ESD structure is improved over our previous family for more rugged applications and environments sensitive to electro-static discharges and associated transients. The improved ESD tolerance is at least +15kV without damage nor latch-up.There are different methods of ESD testing applied:a) MIL-STD-883, Method 3015.7b) IEC61000-4-2 Air-Dischargec) IEC61000-4-2 Direct ContactThe Human Body Model has been the generally accepted ESD testing method for semi-conductors. This method is also specified in MIL-STD-883, Method 3015.7 for ESD testing. The premise of this ESD test is to simulate the human body’s potential to store electro-static energy and discharge it to an integrated circuit. The simulation is performed by using a test model as shown in Figure 16. This method will test the IC’s capability to withstand an ESD transient during normal handling such as in manu-facturing areas where the ICs tend to be handled frequently.The IEC-61000-4-2, formerly IEC801-2, is generally used for testing ESD on equipment and systems. For system manufacturers, they must guarantee a certain amount of ESD protection since the system itself is exposed to the outside environment and human pres-ence. The premise with IEC61000-4-2 is that the system is required to withstand an amount of static electricity when ESD is applied to points and surfaces of the equipment that are accessible to personnel during normal usage. The transceiver IC receives most of the ESD current when the ESD source is applied to the connector pins. The test circuit for IEC61000-4-2 is shown on Figure 17. There are two methodswithin IEC61000-4-2, the Air Discharge method and the Contact Discharge method.With the Air Discharge Method, an ESD voltage is applied to the equipment under test (EUT) through air. This simulates an electrically charged person ready to connect a cable onto the rear of the system only to find an unpleasant zap just before the person touches the back panel. The high energy potential on the person discharges through an arcing path to the rear panel of the system before he or she even touches the system. This energy, whether discharged directly or through air, is predominantly a function of the discharge current rather than the discharge voltage. Variables with an air discharge such as approach speed of the object carrying the ESD potential to the system and humidity will tend to change the discharge current. For example, the rise time of the discharge current varies with the approach speed.The Contact Discharge Method applies the ESD current directly to the EUT. This method was devised to reduce the unpredictability of the ESD arc. The discharge current rise time is constant since the energy is directly transferred without the air-gap arc. In situ-ations such as hand held systems, the ESD charge can be directly discharged to theFigure 16. ESD Test Circuit for Human Body ModelDEVICE PIN HUMAN BODY IEC61000-4-2 TESTED MODEL AirDischarge Direct Contact LevelDriver Outputs +15kV +15kV +8kV4Receiver Inputs +15kV+15kV+8kV4equipment from a person already holding the equipment. The current is transferred on to the keypad or the serial port of the equipment directly and then travels through the PCB and finally to the IC.The circuit models in Figures 16 and 17 rep-resent the typical ESD testing circuit used for all three methods. The C S is initially charged with the DC power supply when the first switch (SW1) is on. Now that the capacitor is charged, the second switch (SW2) is on while SW1 switches off. The voltage stored in the capacitor is then applied through R S , the current limiting resistor, onto the device under test (DUT). In ESD tests, the SW2 switch is pulsed so that the device under test receives a duration of voltage. For the Human Body Model, the current limiting resistor (R S ) and the source capacitor (C S ) are 1.5k? an 100pF, respectively. For IEC-61000-4-2, the current limiting resistor (R S ) and the source capacitor (C S ) are 330? an 150pF, respectively .Figure 18. ESD Test Waveform for IEC61000-4-2Figure 17. ESD Test Circuit for IEC61000-4-2Table 3. Transceiver ESD Tolerance Levelst = 0nst = 30ns0A15A30AI →t →The higher C S value and lower R S value in the IEC61000-4-2 model are more stringent than the Human Body Model. The larger storage capacitor injects a higher voltage to the test point when SW2 is switched on. The lower current limiting resistor increases the current charge onto the test point.PACKAGE: 20 PIN SSOPPACKAGE: 16 PIN SSOPPACKAGE: 16 PIN PDIPPACKAGE: 16 PIN WSOIC。

FEATURESAPPLICATIONSD, DB, DW, OR PW PACKAGE(TOP VIEW)12345678161514131211109C1+V+C1−C2+C2−V−DOUT2RIN2V CC GND DOUT1RIN1ROUT1DIN1DIN2ROUT2DESCRIPTION/ORDERING INFORMATIONMAX3232E3-V TO 5.5-V MULTICHANNEL RS-232LINE DRIVER/RECEIVERWITH ±15-kV IEC ESD PROTECTIONSLLS664A–AUGUST 2005–REVISED APRIL 2007•Battery-Powered Systems •ESD Protection for RS-232Bus Pins •PDAs–±15kV (HBM)•Notebooks –±8kV (IEC61000-4-2,Contact Discharge)•Laptops–±15kV (IEC61000-4-2,Air-Gap Discharge)•Palmtop PCs•Meets or Exceeds the Requirements of •Hand-Held EquipmentTIA/EIA-232-F and ITU v.28Standards •Operates With 3-V to 5.5-V V CC Supply •Operates up to 250kbit/s•Two Drivers and Two Receivers •Low Supply Current ...300µA Typ •External Capacitors ...4×0.1µF•Accepts 5-V Logic Input With 3.3-V Supply •Pin Compatible to Alternative High-Speed Device (1Mbit/s)–SNx5C3232ORDERING INFORMATIONT APACKAGE (1)(2)ORDERABLE PART NUMBER TOP-SIDE MARKING Tube of 40MAX3232ECD SOIC –D MAX3232EC Reel of 2500MAX3232ECDR Tube of 40MAX3232ECDW SOIC –DWMAX3232EC Reel of 2000MAX3232ECDWR –0°C to 70°CTube of 80MAX3232ECDB SSOP –DB MP232EC Reel of 2000MAX3232ECDBR Tube of 90MAX3232ECPW TSSOP –PW MP232EC Reel of 2000MAX3232ECPWR Tube of 40MAX3232EID SOIC –D MAX3232EI Reel of 2500MAX3232EIDR Tube of 40MAX3232EIDW SOIC –DWMAX3232EI Reel of 2000MAX3232EIDWR –40°C to 85°CTube of 80MAX3232EIDB SSOP –DB MP232EI Reel of 2000MAX3232EIDBR Tube of 90MAX3232EIPW TSSOP –PWMP232EIReel of 2000MAX3232EIPWR(1)Package drawings,standard packing quantities,thermal data,symbolization,and PCB design guidelines are available at /sc/package.(2)For the most current package and ordering information,see the Package Option Addendum at the end of this document,or see the TI website at .Please be aware that an important notice concerning availability,standard warranty,and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.ttp:// 电子发烧友 电子技术论坛DESCRIPTION/ORDERING INFORMATION (CONTINUED)DIN1DOUT1RIN1ROUT1DIN2DOUT2RIN2ROUT2MAX3232E3-V TO 5.5-V MULTICHANNEL RS-232LINE DRIVER/RECEIVER WITH ±15-kV IEC ESD PROTECTIONSLLS664A–AUGUST 2005–REVISED APRIL 2007The MAX3232E device consists of two line drivers,two line receivers,and a dual charge-pump circuit with ±15-kV IEC ESD protection pin to pin (serial-port connection pins,including GND).The device meets the requirements of TIA/EIA-232-F and provides the electrical interface between an asynchronous communication controller and the serial-port connector.The charge pump and four small external capacitors allow operation from a single 3-V to 5.5-V supply.The devices operate at data signaling rates up to 250kbit/s and a maximum of 30-V/µs driver output slew rate.FUNCTION TABLES EACH DRIVER (1)INPUT OUTPUT DIN DOUTL H HL(1)H =high level,L =low levelEACH RECEIVER (1)INPUT OUTPUT RIN ROUTL H H L OpenH(1)H =high level,L =low level,Open =input disconnected or connected driver offLOGIC DIAGRAM (POSITIVE LOGIC)ttp:// 电子发烧友 电子技术论坛Absolute Maximum Ratings(1) Recommended Operating Conditions(1) Electrical Characteristics(1)MAX3232E3-V TO5.5-V MULTICHANNEL RS-232LINE DRIVER/RECEIVERWITH±15-kV IEC ESD PROTECTIONSLLS664A–AUGUST2005–REVISED APRIL2007 over operating free-air temperature range(unless otherwise noted)MIN MAX UNITV CC Supply voltage range(2)–0.36VV+Positive output supply voltage range(2)–0.37VV–Negative output supply voltage range(2)0.3–7VV+–Supply voltage difference(2)13VV–Drivers–0.36VV I Input voltage rangeReceivers–2525VDrivers–13.213.2VV O Output voltage rangeReceivers–0.3V CC+0.3VD package73DB package82θJA Package thermal impedance(3)(4)°C/WDW package57PW package108T J Operating virtual junction temperature150°CT stg Storage temperature range–65150°C (1)Stresses beyond those listed under"absolute maximum ratings"may cause permanent damage to the device.These are stress ratingsonly,and functional operation of the device at these or any other conditions beyond those indicated under"recommended operating conditions"is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.(2)All voltages are with respect to network GND.(3)Maximum power dissipation is a function of T J(max),θJA,and T A.The maximum allowable power dissipation at any allowable ambienttemperature is P D=(T J(max)–T A)/θJA.Operating at the absolute maximum T J of150°C can affect reliability.(4)The package thermal impedance is calculated in accordance with JESD51-7.See Figure4MIN NO MAX UNITMV CC=3.3V3 3.3 3.6 Supply voltage VV CC=5V 4.55 5.5V CC=3.3V2 5.5V IH Driver high-level input voltage DIN VV CC=5V 2.4 5.5V IL Driver low-level input voltage DIN00.8VV I Receiver input voltage–2525VMAX3232EC070T A Operating free-air temperature°CMAX3232EI–4085(1)Test conditions are C1–C4=0.1µF at V CC=3.3V±0.3V;C1=0.047µF,C2–C4=0.33µF at V CC=5V±0.5V.over recommended ranges of supply voltage and operating free-air temperature(unless otherwise noted)(see Figure4) PARAMETER TEST CONDITIONS MIN TYP(2)MAX UNITI CC Supply current No load,V CC=3.3V or5V0.31mA(1)Test conditions are C1–C4=0.1µF at V CC=3.3V±0.3V;C1=0.047µF,C2–C4=0.33µF at V CC=5V±0.5V.(2)All typical values are at V CC=3.3V or V CC=5V,and T A=25°C.ttp:// 电子发烧友 电子技术论坛DRIVER SECTIONElectrical Characteristics (1)Switching Characteristics (1)MAX3232E3-V TO 5.5-V MULTICHANNEL RS-232LINE DRIVER/RECEIVER WITH ±15-kV IEC ESD PROTECTIONSLLS664A–AUGUST 2005–REVISED APRIL 2007over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(see Figure 4)PARAMETERTEST CONDITIONSMIN TYP (2)MAXUNIT V OH High-level output voltage DOUT at R L =3k Ωto GND,DIN =GND 5 5.4V V OL Low-level output voltage DOUT at R L =3k Ωto GND,DIN =V CC–5–5.4V I IH High-level input current V I =V CC ±0.01±1µA I IL Low-level input current V I at GND ±0.01±1µA V CC =3.6V,V O =0V I OS (3)Short-circuit output current ±35±60mA V CC =5.5V,V O =0V r O Output resistanceV CC ,V+,and V–=0V,V O =±2V30010MΩ(1)Test conditions are C1–C4=0.1µF at V CC =3.3V ±0.3V;C1=0.047µF,C2–C4=0.33µF at V CC =5V ±0.5V.(2)All typical values are at V CC =3.3V or V CC =5V,and T A =25°C.(3)Short-circuit durations should be controlled to prevent exceeding the device absolute power dissipation ratings,and not more than one output should be shorted at a time.over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(see Figure 4)PARAMETER TEST CONDITIONSMIN TYP (2)MAXUNIT C L =1000pF,R L =3k Ω,Maximum data rate150250kbit/s One DOUT switching,See Figure 1C L =150pF to 2500pF,R L =3k Ωto 7k Ω,t sk(p)Pulse skew (3)300ns See Figure 2C L =150pF to 1000pF 630Slew rate,transition region R L =3k Ωto 7k Ω,SR(tr)V/µs(see Figure 1)V CC =3.3VC L =150pF to 2500pF430(1)Test conditions are C1–C4=0.1µF at V CC =3.3V ±0.3V;C1=0.047µF,C2–C4=0.33µF at V CC =5V ±0.5V.(2)All typical values are at V CC =3.3V or V CC =5V,and T A =25°C.(3)Pulse skew is defined as |t PLH –t PHL |of each channel of the same device.ttp:// 电子发烧友 电子技术论坛RECEIVER SECTION Electrical Characteristics(1)Switching Characteristics(1)MAX3232E 3-V TO5.5-V MULTICHANNEL RS-232LINE DRIVER/RECEIVERWITH±15-kV IEC ESD PROTECTIONSLLS664A–AUGUST2005–REVISED APRIL2007over recommended ranges of supply voltage and operating free-air temperature(unless otherwise noted)(see Figure4) PARAMETER TEST CONDITIONS MIN TYP(2)MAX UNITV OH High-level output voltage I OH=–1mA V CC–0.6V CC–0.1V V OL Low-level output voltage I OL=1.6mA0.4VV CC=3.3V 1.5 2.4V IT+Positive-going input threshold voltage VV CC=5V 1.8 2.4V CC=3.3V0.6 1.2V IT–Negative-going input threshold voltage VV CC=5V0.8 1.5V hys Input hysteresis(V IT+–V IT–)0.3V r i Input resistance V I=±3V to±25V357kΩ(1)Test conditions are C1–C4=0.1µF at V CC=3.3V±0.3V;C1=0.047µF,C2–C4=0.33µF at V CC=5V±0.5V.(2)All typical values are at V CC=3.3V or V CC=5V,and T A=25°C.over recommended ranges of supply voltage and operating free-air temperature(unless otherwise noted)(see Figure3)PARAMETER TEST CONDITIONS TYP(2)UNITt PLH Propagation delay time,low-to high-level output300nsC L=150pFt PHL Propagation delay time,high-to low-level output300ns t sk(p)Pulse skew(3)300ns(1)Test conditions are C1–C4=0.1µF at V CC=3.3V±0.3V;C1=0.047µF,C2–C4=0.33µF at V CC=5V±0.5V.(2)All typical values are at V CC=3.3V or V CC=5V,and T A=25°C.(3)Pulse skew is defined as|t PLH–t PHL|of each channel of the same device.ttp:// 电子发烧友 电子技术论坛PARAMETER MEASUREMENT INFORMATIONTEST CIRCUITVOLTAGE WAVEFORMS0 V3 VOutputInputV OLV OH t TLHRS-232Outputt THLSR(tr)+6V tTHLor tTLHNOTES: A.C L includes probe and jig capacitance.B.The pulse generator has the following characteristics: PRR = 250 kbit/s, Z O = 50 Ω, 50% duty cycle, t r ≤ 10 ns, t f ≤ 10 ns.1.5 V1.5 V3 V −3 V3 V −3 VTEST CIRCUITVOLTAGE WAVEFORMS 0 V 3 VOutputInputV OLV OHt PLHt PHL50%50%NOTES: A.C L includes probe and jig capacitance.B.The pulse generator has the following characteristics: PRR = 250 kbit/s, Z O = 50 Ω, 50% duty cycle, t r ≤ 10 ns, t f ≤ 10 ns.1.5 V1.5 VRS-232OutputTEST CIRCUITVOLTAGE WAVEFORMS50%50%−3 V3 V1.5 V1.5 VOutputInputV OLV OHt PHLt PLHOutputNOTES: A.C L includes probe and jig capacitance.B.The pulse generator has the following characteristics: Z O = 50 Ω, 50% duty cycle, t r ≤ 10 ns, t f ≤ 10 ns.MAX3232E3-V TO 5.5-V MULTICHANNEL RS-232LINE DRIVER/RECEIVER WITH ±15-kV IEC ESD PROTECTIONSLLS664A–AUGUST 2005–REVISED APRIL 2007Figure 1.Driver Slew RateFigure 2.Driver Pulse SkewFigure 3.Receiver Propagation Delay Timesttp:// 电子发烧友 电子技术论坛APPLICATION INFORMATIONC1C BYPASS = 0.1µFV CC C1C2, C3, C43.3 V ± 0.3 V 5 V ± 0.5 V 3 V to 5.5 V0.1 µF 0.047 µF 0.1 µF0.1 µF 0.33 µF 0.47 µFV CC vs CAPACITOR VALUES †C3 can be connected to V CC or GND.NOTES: A.Resistor values shown are nominal.B.Nonpolarized ceramic capacitors are acceptable. If polarized tantalum or electrolytic capacitors are used, they should beconnected as shown.MAX3232E3-V TO 5.5-V MULTICHANNEL RS-232LINE DRIVER/RECEIVERWITH ±15-kV IEC ESD PROTECTIONSLLS664A–AUGUST 2005–REVISED APRIL 2007Figure 4.Typical Operating Circuit and Capacitor Valuesttp:// 电子发烧友 电子技术论坛PACKAGING INFORMATIONOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)MAX3232ECD ACTIVE SOIC D1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECDB ACTIVE SSOP DB1680Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECDBE4ACTIVE SSOP DB1680Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECDBG4ACTIVE SSOP DB1680Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECDBR ACTIVE SSOP DB162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECDBRE4ACTIVE SSOP DB162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECDBRG4ACTIVE SSOP DB162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECDE4ACTIVE SOIC D1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECDG4ACTIVE SOIC D1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECDR ACTIVE SOIC D162500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECDRE4ACTIVE SOIC D162500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECDRG4ACTIVE SOIC D162500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECDW ACTIVE SOIC DW1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECDWG4ACTIVE SOIC DW1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECDWR ACTIVE SOIC DW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECDWRG4ACTIVE SOIC DW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECPW ACTIVE TSSOP PW1690Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECPWE4ACTIVE TSSOP PW1690Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECPWG4ACTIVE TSSOP PW1690Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECPWR ACTIVE TSSOP PW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECPWRE4ACTIVE TSSOP PW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232ECPWRG4ACTIVE TSSOP PW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EID ACTIVE SOIC D1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIDB ACTIVE SSOP DB1680Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIDBE4ACTIVE SSOP DB1680Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)MAX3232EIDBG4ACTIVE SSOP DB1680Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIDBR ACTIVE SSOP DB162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIDBRE4ACTIVE SSOP DB162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIDBRG4ACTIVE SSOP DB162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIDE4ACTIVE SOIC D1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIDG4ACTIVE SOIC D1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIDR ACTIVE SOIC D162500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIDRE4ACTIVE SOIC D162500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIDRG4ACTIVE SOIC D162500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIDW ACTIVE SOIC DW1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIDWG4ACTIVE SOIC DW1640Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIDWR ACTIVE SOIC DW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIDWRG4ACTIVE SOIC DW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIPW ACTIVE TSSOP PW1690Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIPWE4ACTIVE TSSOP PW1690Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIPWG4ACTIVE TSSOP PW1690Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIPWR ACTIVE TSSOP PW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIPWRE4ACTIVE TSSOP PW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMMAX3232EIPWRG4ACTIVE TSSOP PW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIM(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan-The planned eco-friendly classification:Pb-Free(RoHS),Pb-Free(RoHS Exempt),or Green(RoHS&no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free(RoHS):TI's terms"Lead-Free"or"Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all6substances,including the requirement that lead not exceed0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free(RoHS Exempt):This component has a RoHS exemption for either1)lead-based flip-chip solder bumps used between the die andpackage,or2)lead-based die adhesive used between the die and leadframe.The component is otherwise considered Pb-Free(RoHS compatible)as defined above.Green(RoHS&no Sb/Br):TI defines"Green"to mean Pb-Free(RoHS compatible),and free of Bromine(Br)and Antimony(Sb)based flame retardants(Br or Sb do not exceed0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.OTHER QUALIFIED VERSIONS OF MAX3232E:•Automotive:MAX3232E-Q1NOTE:Qualified Version Definitions:•Automotive-Q100devices qualified for high-reliability automotive applications targeting zero defectsTAPE AND REEL INFORMATION*All dimensions are nominalDevicePackage Type Package Drawing Pins SPQReel Diameter (mm)Reel Width W1(mm)A0(mm)B0(mm)K0(mm)P1(mm)W (mm)Pin1Quadrant MAX3232ECDBR SSOP DB 162000330.016.48.2 6.6 2.512.016.0Q1MAX3232ECDR SOIC D 162500330.016.4 6.510.3 2.18.016.0Q1MAX3232ECDWR SOIC DW 162000330.016.410.7510.7 2.712.016.0Q1MAX3232ECPWR TSSOP PW 162000330.012.47.0 5.6 1.68.012.0Q1MAX3232EIDBR SSOP DB 162000330.016.48.2 6.6 2.512.016.0Q1MAX3232EIDR SOIC D 162500330.016.4 6.510.3 2.18.016.0Q1MAX3232EIDWR SOIC DW 162000330.016.410.7510.7 2.712.016.0Q1MAX3232EIPWRTSSOPPW162000330.012.47.05.61.68.012.0Q1*All dimensions are nominalDevice Package Type Package Drawing Pins SPQ Length(mm)Width(mm)Height(mm) MAX3232ECDBR SSOP DB162000346.0346.033.0 MAX3232ECDR SOIC D162500346.0346.033.0 MAX3232ECDWR SOIC DW162000346.0346.033.0 MAX3232ECPWR TSSOP PW162000346.0346.029.0 MAX3232EIDBR SSOP DB162000346.0346.033.0 MAX3232EIDR SOIC D162500346.0346.033.0 MAX3232EIDWR SOIC DW162000346.0346.033.0 MAX3232EIPWR TSSOP 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±15 kV ESD Protected, 3.3 V, RS-232Line Driver/ReceiverADM3232E Rev. BInformation furnished by Analog Devices is believed to be accurate and reliable. However, noresponsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. T rademarks and registered trademarks are the property of their respective owners. O ne Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 Fax: 781.461.3113 ©2006–2011 Analog Devices, Inc. All rights reserved.FEATURESData rate: 460 kbps2 Tx and 2 RxMeets EIA-232E specifications0.1 μF charge pump capacitorsESD protection to IEC 1000-4-2 (801.2) on RS-232 I/Os Contact discharge: ±8 kVAir gap discharge: ±15 kVAPPLICATIONSGeneral-purpose RS-232 data linkPortable instrumentsHandsetsIndustrial/telecom diagnostic portsFUNCTIONAL BLOCK DIAGRAMT1T2R1R2TTL/CMOSINPUTSTTL/CMOSOUTPUTSC10.1µF10VC20.1µF10V641-1Figure 1.GENERAL DESCRIPTIONThe ADM3232E transceiver is a high speed, 2-channel RS-232/V.28 interface device that operates from a single 3.3 V power supply. Low power consumption makes it ideal for battery-powered portable instruments. The ADM3232E conforms to the EIA-232E and ITU-T V.28 specifications and operates at data rates up to 460 kbps.All RS-232 (Tx OUT and Rx IN) inputs and outputs are protected against electrostatic discharges (up to ±15 kV ESD protection). This ensures compliance with IEC 1000-4-2 requirements. This device is ideally suited for operation in electrically harsh environments or where RS-232 cables are frequently plugged/ unplugged, with the ±15 kV ESD protection of the ADM3232E RS-232 input/output pins. Emissions are also controlled to within very strict limits. CMOS technology is used to keep the power dissipation to an absolute minimum, allowing maximum battery life in portable applications. Four external 0.1 μF charge pump capacitors are used for the voltage doubler/inverter, permitting operation from a single 3.3 V supply.The ADM3232E is available in a 16-lead narrow and wide SOIC packages, as well as a space-saving 16-lead TSSOP.ADM3232ERev. B | Page 2 of 12TABLE OF CONTENTSFeatures..............................................................................................1 Applications.......................................................................................1 Functional Block Diagram..............................................................1 General Description.........................................................................1 Revision History...............................................................................2 Specifications.....................................................................................3 Absolute Maximum Ratings............................................................4 ESD Caution..................................................................................4 Pin Configuration and Function Descriptions..............................5 Typical Performance Characteristics..............................................6 Theory of Operation.........................................................................8 Circuit Description.......................................................................8 High Baud Rate..............................................................................8 Outline Dimensions..........................................................................9 Ordering Guide.. (10)REVISION HISTORY4/11—Rev. A to Rev. BChanges to Features Section and General DescriptionSection................................................................................................1 Change to ESD Protection (RS-232 I/O Pins) Parameter,Table 1................................................................................................3 Change to ESD Protection on RS-232 Pins Section Heading.. (8)7/08—Rev. 0 to Rev. AAdded 16-Lead SOIC.........................................................Universal Updated Outline Dimensions.........................................................9 Changes to Ordering Guide. (10)12/06—Revision 0: Initial VersionADM3232ESPECIFICATIONSV CC = 3.3 V ± 0.3 V, C1 to C4 = 0.1 μF; all specifications T MIN to T MAX, unless otherwise noted.Table 1.Parameter Min Typ Max Unit Test Conditions/CommentsDC CHARACTERISTICSOperating Voltage Range 3.0 3.3 5.5 VV CC Power Supply Current 1.3 3 mA No loadLOGICInput Logic Threshold Low, V INL0.8 V T INInput Logic Threshold High, V INH 2.0 V T INTTL/CMOS Output Voltage Low, V OL0.4 V I OUT = 1.6 mATTLCMOS Output Voltage High, V OH V CC − 0.6 V I OUT = −1 mALogic Pull-Up Current 5 10 μA T IN = GND to V CCTransmitter Input Hysteresis 0.5 VRS-232 RECEIVERInput Voltage Range −30 +30 VInput Threshold Low 0.6 1.2 VInput Threshold High 1.6 2.4 VInput Hysteresis 0.4 VInput Resistance 3 5 7 kΩRS-232 TRANSMITTEROutput Voltage Swing (RS-232) ±5.0 ±5.2 V V CC = 3.3 V, all transmitter outputs loaded with 3 kΩ to ground Output Voltage Swing (RS-562) ±3.7 V V CC = 3.0 VTransmitter Output Resistance 300 Ω V CC = 0 V, V OUT = ±2 VOutput Short-Circuit Current (RS-232) ±15 mATIMING CHARACTERISTICSMaximum Data Rate 460 kbps V CC = 3.3 V, R L = 3 kΩ to 7 kΩ, C L = 50 pF to 1000 pF, oneTx switchingReceiver Propagation Delayt PHL0.4 1 μst PLH0.4 1 μsTransmitter Propagation Delay 300 1.2 μs R L = 3 kΩ, C L = 1000 pFReceiver Output Enable Time 200 nsReceiver Output Disable Time 200 nsTransmitter Skew 30 nsReceiver Skew 300 nsTransition Region Slew Rate 5.5 10 30 V/μs Measured from +3 V to −3 V or −3 V to +3 V, V CC = 3.3 V;R L = 3 kΩ, C L = 1000 pF, T A = 25°CESD PROTECTION (RS-232 I/O PINS)±15 kV Human body model±15 kV IEC 1000-4-2 air discharge±8 kV IEC 1000-4-2 contact dischargeRev. B | Page 3 of 12ADM3232ERev. B | Page 4 of 12ABSOLUTE MAXIMUM RATINGST A = 25°C, unless otherwise noted. Table 2.Parameter Rating V CC −0.3 V to +6 VV+ (V CC − 0.3 V) to 14 VV− +0.3 V to –14 VInput VoltagesTx IN −0.3 V to (V CC + 0.3 V)Rx IN ±30 VOutput VoltagesTx OUT ±15 V Rx OUT −0.3 V to (V CC + 0.3 V) Short-Circuit DurationTx OUT ContinuousPower Dissipation R-16/RW-16 450 mW(Derate 6 mW/°C Above 50°C)θJA , Thermal Impedance158°C/W Power Dissipation RU-16 500 mW (Derate 6 mW/°C Above 50°C)θJA , Thermal Impedance158°C/W Operating Temperature Range Industrial (A Version) −40°C to +85°C Storage Temperature Range −65°C to +150°C Lead Temperature (Soldering, 10 sec) JEDEC industry-standard J-STD-020Stresses above those listed under Absolute Maximum Ratingsmay cause permanent damage to the device. This is a stressrating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ESD CAUTIONADM3232ERev. B | Page 5 of 12PIN CONFIGURATION AND FUNCTION DESCRIPTIONSC1+V+C1–C2+V CC GND T1OUT R1IN C2–R1OUT V–T1INT2OUT T2IN R2INR2OUT06410-002Figure 2. Pin ConfigurationTable 3. Pin Function DescriptionsPin No. Mnemonic Description 1, 3C1+, C1– External Capacitor 1 is connected between these pins. A 0.1 μF capacitor is recommended, but larger capacitorsof up to 47 μF can be used.2 V+ Internally Generated Positive Supply (6 V Nominal). 4, 5 C2+, C2– External Capacitor 2 is connected between these pins. A 0.1 μF capacitor is recommended, but larger capacitorsof up to 47 μF can be used.6 V– Internally Generated Negative Supply (−6 V Nominal). 7, 14 T2OUT , T1OUT Transmitter (Driver) Outputs. These are RS-232 signal levels (typically ±6 V). 8, 13 R2IN , R1IN Receiver Inputs. These inputs accept RS-232 signal levels. An internal 5 kΩ pull-down resistor to GND is connectedon each input.9, 12 R2OUT , R1OUT Receiver Outputs. These are TTL/CMOS output logic levels. 10, 11 T2IN , T1IN Transmitter (Driver) Inputs. These inputs accept TTL/CMOS levels. 15 GND Ground Pin. Must be connected to 0 V. 16 V CC Power Supply Input (3.3 V ± 0.3 V).ADM3232ERev. B | Page 6 of 12TYPICAL PERFORMANCE CHARACTERISTICSLOAD CAPACITANCE (pF)86420–2–4–6–8T x O U T (V )06410-003Figure 3. Transmitter Output Voltage High/Low vs.Load Capacitance @ 460 kbpsV CC (V)8T x O U T (V )6420–2–4–6–806410-004Figure 4. Transmitter Output Voltage vs. V CCLOAD CURRENT (mA)802468T x O U T (V )6420–2–4–6–8101206410-005Figure 5. Transmitter Output Voltage High/Low vs. Load Current LOAD CURRENT (mA)802468V+V +, V – (V )6420–2–4–6–8V–101206410-006Figure 6. Charge Pump V+, V− vs. Load CurrentV CC (V)3502.72.93.13.3 3.5I M P E D A N C E (Ω)3002502001501005006410-007Figure 7. Charge Pump Impedance vs. V CCLOAD CAPACITANCE (pF)200100020003000I CC @ 230kbpsI C C (m A )18161412102864I CC @ 460kbps06410-008Figure 8. Power Supply Current vs. Load CapacitanceADM3232ERev. B | Page 7 of 1206410-009Figure 9. 460 kbps Data TransmissionADM3232ERev. B | Page 8 of 12THEORY OF OPERATIONThe ADM3232E is a single-channel RS-232 line driver/receiver. Step-up voltage converters, coupled with level-shifting transmitters and receivers, allow RS-232 levels to be developed while operating from a single 3.3 V supply.CMOS technology is used to keep the power dissipation to an absolute minimum, allowing maximum battery life in portable applications.CIRCUIT DESCRIPTIONThe internal circuitry consists of the following main sections: • A charge pump voltage converter • A 3.3 V logic to RS-232 transmitter •An RS-232 to 3.3 V logic receiverCharge Pump Voltage ConverterThe charge pump voltage converter consists of a 200 kHz oscillator and a switching matrix. The converter generates a ±6.6 V supply from the input 3.3 V level. This is accomplished in two stages by using a switched capacitor technique as shown in Figure 10. First, the 3.3 V input supply is doubled to 6.6 V by using Capacitor C1 as the charge storage element. The +6.6 V level is then inverted to generate −6.6 V , using C2 as the storage element.Capacitor C3 and Capacitor C4 are used to reduce the output ripple. Their values are not critical and can be increased, if desired. Capacitor C3 is shown connected between V+ and V CC . It is also acceptable to connect this capacitor between V+ and GND. If desired, larger capacitors (up to 10 μF) can be used for Capacitor C1 to Capacitor C4.T1T2R1R2TTL/CMOS INPUTSTTL/CMOS OUTPUTSC10.1µF 10V C20.1µF 10V06410-010Figure 10. Typical Operating CircuitCCCC06410-011Figure 11. Charge Pump Voltage Doubler06410-012Figure 12. Charge Pump Voltage Inverter3.3 V Logic to RS-232 TransmitterThe drivers convert 3.3 V logic input levels into RS-232 output levels. With V CC = 3.3 V and driving an RS-232 load, the output voltage swing is typically ±6 V .RS-232 to 3.3 V Logic ReceiverThe receivers are inverting level shifters that accept RS-232 input levels and translate them into 3 V logic output levels. The inputs have internal 5 kΩ pull-down resistors to ground and are pro- tected against overvoltages up to ±30 V . Unconnected inputs are pulled to 0 V by the internal 5 kΩ pull-down resistor. This results in a Logic 1 output level for unconnected inputs or for inputs connected to GND.The receivers have Schmitt trigger inputs with a hysteresis level of 0.4 V . This ensures error-free reception for both noisy inputs and for inputs with slow transition times.ESD Protection on RS-232 PinsAll RS-232 (Tx OUT and Rx IN ) inputs and outputs are protected against electrostatic discharges (up to ±15 kV). This ensures compliance with IEC 1000-4-2 requirements.HIGH BAUD RATEThe ADM3232E features high slew rates, permitting data trans-mission at rates well in excess of the EIA-232E specifications. RS-232 voltage levels are maintained at data rates up to 460 kbps, even under worst-case loading conditions. The slew rate is internally controlled to less than 30 V/μs to minimize EMI interference.ADM3232ERev. B | Page 9 of 12OUTLINE DIMENSIONSCONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES)ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.COMPLIANT TO JEDEC STANDARDS MS-012-AC060606-AFigure 13. 16-Lead Standard Small Outline Package [SOIC_N]Narrow Body (R-16)Dimensions shown in millimeters (and inches)0.150.051.20COPLANARITY0.10COMPLIANT TO JEDEC STANDARDS MO-153-ABFigure 14. 16-Lead Thin Shrink Small Outline Package [TSSOP](RU-16)Dimensions shown in millimetersADM3232ERev. B | Page 10 of 12CONTROLLING DIMENSIONS ARE IN MILLIMETERS;INCH DIMENSIONS (IN PARENTHESES)ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.COMPLIANT TO JEDEC STANDARDS MS-013-AA2.652.35(0.0925)0.31(0.0122)03-27-2007-BFigure 15. 16-Lead Standard Small Outline Package [SOIC_W]Wide Body (RW-16)Dimensions shown in millimeters (and inches)ORDERING GUIDEModel 1Temperature Range Package Description Package Option ADM3232EARNZ–40°C to +85°C 16-Lead SOIC_N R-16 ADM3232EARNZ-REEL7 –40°C to +85°C 16-Lead SOIC_N R-16 ADM3232EARUZ–40°C to +85°C 16-Lead TSSOP RU-16 ADM3232EARUZ-REEL7 –40°C to +85°C 16-Lead TSSOP RU-16 ADM3232EARWZ–40°C to +85°C 16-Lead SOIC_W RW-16 ADM3232EARWZ-REEL–40°C to +85°C 16-Lead SOIC_W RW-161Z = RoHS Compliant Part.ADM3232E NOTESRev. B | Page 11 of 12ADM3232ERev. B | Page 12 of 12 NOTES©2006–2011 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners.D06410-0-4/11(B)。

January 2008Rev 81/15ST3222EB ST3222EC± 15 kV ESD protected, 3 to 5.5 Vlow power, up to 250 Kbps, RS-232 drivers and receiversFeatures■ESD protection for RS-232 I/O pins ± 15 kV human body model, ± 8 kV IEC 1000-4-2 contact discharge ■300 µA supply current■250KBps minimum guarantee data rate ■ 6 V/µs minimum guarantee slew rate ■Meet EIA/TIA-232 specification down to 3 V ■Available in SSOP20 and TSSOP20DescriptionThe ST3222E is a 3 V powered EIA/TIA-232 and V .28/V .24 communications interface with low power requirements, high data-rate capabilities and enhanced electrostatic discharge (ESD) protection to ± 8 kV using IEC1000-4-2 Contact Discharge and ±15 kV using the Human Body Model. ST3222E has a proprietary low dropout transmitter output stage providing true RS-232 performance from 3 to 5 V supplies with a dual charge pump. The charge pump requires only four small 0.1 mF external capacitors for operation form 3 V supply. The device has two receivers and two drivers. The ST3222E features a 1 mAshutdown mode that reduces power consumption and extends battery life in portable systems. Its receivers can remain active in shutdown mode, allowing external devices such as modems to be monitored using only 1 mA supply current. The device is guaranteed to run at data rates of 250 Kbps while maintaining RS-232 output levels.Typical applications are Notebook, Sub-notebook and Palmtop Computers, Battery PoweredEquipment, Hand-Held Equipment, Peripherals and Printers.Table 1.Device summaryOrder codes Temperaturerange PackagePackaging ST3222ECPR 0 to 70 °C SSOP20 (tape and reel)1350 parts per reel ST3222EBPR -40 to 85 °C SSOP20 (tape and reel)1350 parts per reel ST3222ECTR 0 to 70 °C TSSOP20 (tape and reel)2500 parts per reel ST3222EBTR -40 to 85 °CTSSOP20 (tape and reel)2500 parts per reelContents ST3222E Contents1Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4Application circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5Typical performance characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 7Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142/15ST3222E Pin configuration3/151 Pin configurationTable 2.Pin descriptionPin n°Symbol Name and function1EN Receiver enable control. drive low for normal operation. Drive high to force thereceivers outputs (R_OUT) into a high-impedance state.2C 1+Positive terminal for the first charge pump capacitor 3V+ 5.5V Generated by the charge pump.4C 1-Negative terminal for the first charge pump capacitor 5C 2+Positive terminal for the second charge pump capacitor 6C 2-Negative terminal for the second charge pump capacitor 7V--5.5V Generated by the charge pump.8T2OUT Second transmitter output voltage 9R2IN Second receiver input voltage 10R2OUT Second receiver output voltage 11NC Not connected12T2IN Second transmitter input voltage 13T1IN First transmitter input voltage 14NC Not connected15R1OUT First receiver output voltage 16R1IN First receiver input voltage 17T1OUT First transmitter output voltage 18GND Ground 19V CC Supply voltage20SHDNActive low shutdown control input. drive low to shut-down transmitter and charge pumpAbsolute maximum ratings ST3222E 2 Absolute maximum ratingsTable 3.Absolute maximum ratingsSymbol Parameter Value Unit V CC Supply voltage-0.3 to 6V V+Doubled voltage terminal(V CC - 0.3) to 7V V-Inverted voltage terminal0.3 to -7V V+ +|V-|13V T IN T ransmitter input voltage range-0.3 to 6V R IN Receiver input voltage range±25V T OUT T ransmitter output voltage range±13.2V R OUT Receiver output voltage range-0.3 to (V CC + 0.3)V t SHORT T ransmitter output short to gnd time ContinuousNote:Absolute maximum ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.Externally applied V+ and V- can have a maximum magnitude of +7 V, but their absoluteaddition can not exceed 13 V.Running on internal charge pump, intrinsic self limitation allows exceeding those valueswithout any damage.Startup voltage sequence (V CC, then V+, then V-) is critical, therefore it is not recommendedto use this device using externally applied voltage to V+ and V-.Table 4.Shutdown and enable control truth tableSHDN EN T-OUT R-OUT 00High Z Active01High Z High Z10Active Active11Active High ZTable 5.ESD performance: transmitter outputs, receiver inputsSymbol Parameter Test conditions Min.Typ.Max.Unit ESD ESD protection voltage Human body model±15kV ESD ESD protection voltage IEC-1000-4-2 ±8kV4/15ST3222E Electrical characteristics5/153Electrical characteristicsNote:1Transmitter input hysteresis is typically 250 mVTable 6.Electrical characteristics (C 1 - C 4 = 0.1 µF , V CC = 3 V to 5.5 V , T A = -40 to 85 °C, unless otherwise specified. Typical values are referred to T A = 25 °C)Symbol ParameterTest conditionsMin.Typ.Max.Unit I SUPPL Y V CC power supply current No load, SHDN = V CC , T A = 25°C 0.31mA I SHDNShutdown supply currentNo load, SHDN = V CC , T A = 25°C110µATable 7.Logic input electrical characteristics (C 1 - C 4 = 0.1 µF , V CC = 3 V to 5.5 V ,T A = -40 to 85 °C, unless otherwise specified. Typical values are referred to T A = 25 °C)Symbol ParameterTest conditionsMin.Typ.Max.Unit V IL Input logic threshold low T -IN, EN, SHDN (Note: 1)0.8V V IH Input logic threshold high V CC = 3.3 V 2V V CC = 5 V2.4V HYS Transmitter input hysteresis0.25V I ILInput leakage currentT -IN, EN, SHDN± 0.01± 1µATable 8.Transmitter electrical characteristics (C 1 - C 4 = 0.1 µF V CC = 3 V to 5.5 V ,T A = -40 to 85 °C, unless otherwise specified. Typical values are referred to T A = 25 °C)Symbol ParameterTest conditionsMin.Typ.Max.Unit V TOUT Output voltage swing All transmitter outputs are loaded with 3 K Ω to GND± 5± 5.4V R TOUT Transmitter output resistanceV CC = V+ = V- = 0 V , V OUT = ± 2 V30010M ΩI TSC Output short circuit current± 60mA I TOLOutput leakage currentV CC = 0 or 3 V to 3.6 V, V OUT = ± 12 V Transmitters disable± 25µAElectrical characteristics ST3222E6/15Table 9.Receiver electrical characteristics (C 1 - C 4 = 0.1 µF , V CC = 3 V to 5.5 V ,T A = -40 to 85 °C, unless otherwise specified. Typical values are referred to T A = 25 °C)Symbol ParameterTest conditionsMin.Typ.Max.Unit I OL Output leakage current R-OUT, EN = V CC , receiver disabled± 0.05± 10µA V RIN Receiver input voltage operating range -2525V V RILInput threshold lowT A = 25°C, V CC = 3.3 V 0.6 1.2VT A = 25°C, V CC = 5 V 0.81.5V RIH Input threshold high T A = 25°C, V CC = 3.3 V 1.52.4V T A = 25°C, V CC = 5 V1.82.4V RIHYS Input hysteresis 0.5V R RIN Input resistance T A = 25°C 357K ΩV ROL Output voltage low I OUT = 1.6 mA 0.4V V ROHOutput voltage highI OUT = -1 mAV CC -0.6V CC -0.1VTable 10.Timing characteristics (C 1 - C 4 = 0.1 µF , V CC = 3 V to 5.5 V , T A = -40 to 85 °C, unless otherwise specified. Typical values are referred to T A = 25 °C)Symbol ParameterTest conditionsMin.Typ.Max.Unit D R Data transfer rateR L = 3 K Ω, C L2= 1000 pF one transmitter switching250Kbps t PHLR t PLHR Propagation delay input tooutputR XIN to R XOUT , C L = 150 pF0.15µs |t PHLT - t THL |Transmitter propagation delay difference (1)200ns t OER Receiver output enable timeNormal operation 50ns t ODR Receiver output disable timeNormal operation50ns |t PHLR - t THR |Receiver propagation delay difference50nsS RTTransition slew rateT A = 25°C R L = 3 K Ω to 7 K Ω V CC = 3.3 Vmeasured from +3V to -3V or -3V to +3V C L = 150 pF to 1000 pF630V/µsT A = 25°C R L = 3 K Ω to 7 K Ω V CC = 3.3 Vmeasured from +3V to -3V or -3V to +3V C L = 150 pF to 2500 pF430V/µs1.Transmitter Skew is measured at the transmitter zero cross pointsST3222E Application circuits7/154 Application circuitsTable 11.Capacitance value (µF)V CCC1C2C3C4Cbypass 3.0 to 3.60.10.10.10.10.14.5 to 5.50.0470.330.330.330.333.0 to 5.50.220.10.10.10.22Typical performance characteristics ST3222E8/155Typical performance characteristics(unless otherwise specified T J = 25 °C) Figure 3.Output current vs output highFigure 4.Output current vs output high Figure 5.Output current vs output lowFigure 6.Output current vs output low Figure 7.Voltage transfer characteristics forFigure 8.Receiver input resistanceST3222E Package mechanical data 6 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in ECOPACK®packages. These packages have a lead-free second level interconnect. The category ofsecond level interconnect is marked on the package and on the inner box label, incompliance with JEDEC Standard JESD97. The maximum ratings related to solderingconditions are also marked on the inner box label. ECOPACK is an ST trademark.ECOPACK specifications are available at: 9/15Package mechanical data ST3222EST3222E Package mechanical dataPackage mechanical data ST3222EST3222E Package mechanical dataRevision history ST3222E 7 Revision historyTable 12.Document revision historyDate Revision Changes22-Mar-20066Order codes updated.23-Aug-20077Added T able1 in cover page.21-Jan-20088Added note on Table3.ST3222EPlease Read Carefully:Information in this document is provided solely in connection with ST products. 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