Electronic structure of clusters (LiBC)_n n=1, 2, 4
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Exploring Chemistry with Electronic Structure MethodSecond EdithionJames B. ForesmanAeleen FrischGaussian, IncPittsburgh, PA2002年9月25日特别声明本文转自南开大学BBS,在此对译者表示衷心感!!!!用Gaussian研究化学问题说明接触Gaussian已经很久了,但真正用Gaussian做东西还是临近博士毕业时的事情。
当时做计算的时候,就特别希望有一本具体怎么使用从头算的书,可惜一直没有找到。
来到这里后,在新买的Gaussian98包中发现了这本书,感觉如获至宝,也希望能够提供应想用Gaussian做东西的朋友。
我不是专门做量化的,很多术语不清楚怎么翻译,手头又没有中文的资料,错误的地方,只能希望行来指点了。
其实这本书里面介绍的东西,不止限于Gaussian 程序的。
对于从事从头算研究的都有帮助。
容中有很多计算实例,都是在Gaussian94,98程序中提供的。
节译自Exploring Chemistry with Electronic Structure Methos,SecondEdition,作者James B。
Foresman,Eleen FrischGaussian,Inc,USA,1996目录特别声明1用Gaussian研究化学问题1说明1前言1运行Gaussian2Unix/Linux平台2Windows平台2输出文件2第一章计算模型31.1 计算化学概述3分子力学理论3电子结构理论4密度泛函(Density Functional Methods)41.2 化学模型(Model Chemistries)4定义化学模型4模型的组合5第二章单点能计算52.1 能量计算设置5路径5计算的名称6分子结构6多步计算62.3 输出文件中的信息6标准几何坐标。
6能量6分子轨道和轨道能级6电荷分布7偶极矩和多极矩7CPU时间和其他72.4 核磁计算7第三章几何优化93.1 势能面93.2 寻找极小值9收敛标准10几何优化的输入10检查优化输出文件103.3 寻找过渡态103.4 难处理的优化11第四章频率分析134.1 预测红外和拉曼光谱13频率计算的输入13频率和强度13矫正因子和零点能。
电子英语证书考试(PEC)-集成电路词汇汇总Abrupt junction 突变结Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源(放大)区Admittance 导纳Allowed band 允带Alloy-junction device合金结器件Aluminum(Aluminium) 铝Aluminum – oxide 铝氧化物Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度Amorphous 无定形的,非晶体的Amplifier 功放扩音器放大器Analogue(Analog) comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Arsenic (AS) 砷Auger 俄歇Auger process 俄歇过程Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ballasting resistor 整流电阻Ball bond 球形键合Band 能带Band gap 能带间隙Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Basis vector 基矢Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT)双极晶体管Bloch 布洛赫Blocking band 阻挡能带Blocking contact 阻挡接触Body - centered 体心立方Body-centred cubic structure 体立心结构Boltzm ann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Bootstrap circuit 自举电路Bootstrapped emitter follower 自举射极跟随器Boron 硼Borosilicate glass 硼硅玻璃Boundary condition 边界条件Bound electron 束缚电子Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊Brillouin zone 布里渊区Built-in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn - in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Can 外壳Capacitance 电容Capture cross section 俘获截面 Capture carrier 俘获载流子Carrier 载流子、载波Carry bit 进位位Carry-in bit 进位输入 Carry-out bit 进位输出Cascade 级联 Case 管壳Cathode 阴极 Center 中心Ceramic 陶瓷(的)Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂 Channel shortening 沟道缩短Channel width 沟道宽度 Characteristic impedance 特征阻抗Charge 电荷、充电 Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒 Charge neutrality condition 电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching 化学腐蚀法 Chemically-Polish 化学抛光Chemmically-Mechanically Polish (CMP) 化学机械抛光Chip 芯片Chip yield 芯片成品率Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clock rate 时钟频率 Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-packed structure 密堆积结构Close-loop gain 闭环增益 Collector 集电极Collision 碰撞 Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益 Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质 Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS)互补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计/ 测试/制造Compound Semiconductor 化合物半导体 Conductance 电导Conduction band (edge) 导带(底) Conduction level/state 导带态Conductor 导体 Conductivity 电导率Configuration 组态 Conlomb 库仑Conpled Configuration Devices 结构组态Constants 物理常数Constant energy surface 等能面 Constant-source diffusion恒定源扩散Contact 接触Contamination 治污Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Continuity condition 连续性条件Contra doping 反掺杂 Controlled 受控的Converter 转换器Conveyer 传输器Copper interconnection system 铜互连系统Couping 耦合Covalent 共阶的Crossover 跨交Critical 临界的Crossunder 穿交Crucible坩埚 Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density 电流密度Curvature 曲率Cut off 截止Current drift/dirve/sharing 电流漂移/驱动/共享Current Sense 电流取样Curvature 弯曲Custom integrated circuit 定制集成电路Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术(Cz法直拉晶体J)Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Debye length 德拜长度De.broglie 德布洛意Decderate 减速Decibel (dB) 分贝Decode 译码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOSDepletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Die 芯片(复数dice)Diode 二极管Dielectric 介电的Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffused junction 扩散结Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Discharge 放电Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Double-diffusive MOS(DMOS)双扩散MOS.Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Duty cycle 工作周期Dual-in-line package (DIP)双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effective mass 有效质量Einstein relation(ship) 爱因斯坦关系Electric Erase Programmable Read Only Memory(E2PROM) 一次性电可擦除只读存储器Electrode 电极Electrominggratim 电迁移Electron affinity 电子亲和势Electronic -grade 电子能Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光Electron gas 电子气Electron-grade water 电子级纯水Electron trapping center 电子俘获中心 Electron Volt (eV) 电子伏Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Ellipsoid 椭球Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边(拥挤)效应Endurance test =life test 寿命测试 Energy state 能态Energy momentum diagram 能量-动量(E-K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOS Entefic (低)共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Expitaxy 外延Equivalent curcuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Erasable Programmable ROM (EPROM)可搽取(编程)存储器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能 Excited state 激发态Exciton 激子 Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Face - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复F ast surface states 快界面态Feedback 反馈Fermi level 费米能级Fermi-Dirac Distribution 费米-狄拉克分布Femi potential 费米势Fick equation 菲克方程(扩散)Field effect transistor 场效应晶体管Field oxide 场氧化层Filled band 满带Film 薄膜Flash memory 闪烁存储器Flat band 平带Flat pack 扁平封装Flicker noise 闪烁(变)噪声Flip-flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Forbidden band 禁带Forward bias 正向偏置Forward blocking /conducting正向阻断/导通Frequency deviation noise频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium-Arsenide(GaAs) 砷化钾Gamy ray r 射线Gate 门、栅、控制极Gate oxide 栅氧化层Gauss(ian)高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium(Ge) 锗Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Grown junction 生长结Guard ring 保护环Gummel-Poom model 葛谋-潘模型Gunn - effect 狄氏效应Hardened device 辐射加固器件Heat of formation 形成热Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂Hell - effect 霍尔效应Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor(HBT)异质结双极型晶体High field property 高场特性High-performance MOS.( H-MOS)高性能MOS. Hormalized 归一化Horizontal epitaxial reactor 卧式外延反应器Hot carrior 热载流子Hybrid integration 混合集成Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Incremental resistance 电阻增量(微分电阻)In-contact mask 接触式掩模Indium tin oxide (ITO) 铟锡氧化物Induced channel 感应沟道Infrared 红外的Injection 注入Input offset voltage 输入失调电压Insulator 绝缘体Insulated Gate FET(IGFET)绝缘栅FET Integrated injection logic集成注入逻辑Integration 集成、积分Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Leakage current (泄)漏电流Level shifting 电平移动Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid-phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Load line or Variable 负载线Locating and Wiring 布局布线Longitudinal 纵向的Logic swing 逻辑摆幅Lorentz 洛沦兹Lumped model 集总模型Majority carrier 多数载流子Mask 掩膜板,光刻板Mask level 掩模序号Mask set 掩模组Mass - action law质量守恒定律Master-slave D flip-flop主从D触发器Matching 匹配Maxwell 麦克斯韦Mean free path 平均自由程Meandered emitter junction梳状发射极结Mean time before failure (MTBF) 平均工作时间Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor金属半导体FETMetallization 金属化Microelectronic technique 微电子技术Microelectronics 微电子学Millen indices 密勒指数Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobile ions 可动离子Mobility 迁移率Module 模块Modulate 调制Molecular crystal分子晶体Monolithic IC 单片IC MOSFET金属氧化物半导体场效应晶体管Mos. Transistor(MOST )MOS. 晶体管Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模块Multiplication coefficient倍增因子Naked chip 未封装的芯片(裸片)Negative feedback 负反馈Negative resistance 负阻Nesting 套刻Negative-temperature-coefficient 负温度系数Noise margin 噪声容限Nonequilibrium 非平衡Nonrolatile 非挥发(易失)性Normally off/on 常闭/开Numerical analysis 数值分析Occupied band 满带 Officienay 功率Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触 Open circuit 开路Operating point 工作点 Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon =photon 光子 Optical quenching光猝灭Optical transition 光跃迁 Optical-coupled isolator光耦合隔离器Organic semiconductor有机半导体 Orientation 晶向、定向Outline 外形Out-of-contact mask非接触式掩模Output characteristic 输出特性Output voltage swing 输出电压摆幅Overcompensation 过补偿 Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭 Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装 Pad 压焊点Parameter 参数 Parasitic effect 寄生效应Parasitic oscillation 寄生振荡 Passination 钝化Passive component 无源元件 Passive device 无源器件Passive surface 钝化界面 Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压 Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Periodic table 周期表 Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导 Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photoenic devices 光子器件Photolithographic process 光刻工艺(photo) resist (光敏)抗腐蚀剂Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎(效应)Planar process 平面工艺 Planar transistor 平面晶体管Plasma 等离子体 Plezoelectric effect 压电效应Poisson equation 泊松方程Point contact 点接触Polarity 极性 Polycrystal 多晶Polymer semiconductor聚合物半导体 Poly-silicon 多晶硅Potential (电)势Potential barrier 势垒Potential well 势阱Power dissipation 功耗Power transistor 功率晶体管 Preamplifier 前置放大器Primary flat 主平面Principal axes 主轴Print-circuit board(PCB) 印制电路板Probability 几率Probe 探针Process 工艺Propagation delay 传输延时Pseudopotential method 膺势发Punch through 穿通 Pulse triggering/modulating 脉冲触发/调制PulseWiden Modulator(PWM) 脉冲宽度调制Punchthrough 穿通 Push-pull stage 推挽级Quality factor 品质因子 Quantization 量子化Quantum 量子Quantum efficiency量子效应Quantum mechanics 量子力学Quasi – Fermi-level准费米能级Quartz 石英Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination辐照复合Radioactive 放射性Reach through 穿通Reactive sputtering source 反应溅射源Read diode 里德二极管Recombination 复合Recovery diode 恢复二极管Reciprocal lattice 倒核子Recovery time 恢复时间Rectifier 整流器(管)Rectifying contact 整流接触Reference 基准点基准参考点Refractive index 折射率Register 寄存器Registration 对准Regulate 控制调整Relaxation lifetime 驰豫时间Reliability 可靠性Resonance 谐振Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管(器)Relaxation 驰豫Resonant frequency共射频率Response time 响应时间Reverse 反向的Reverse bias 反向偏置Sampling circuit 取样电路Sapphire 蓝宝石(Al2O3)Satellite valley 卫星谷Saturated current range电流饱和区Saturation region 饱和区Saturation 饱和的Scaled down 按比例缩小Scattering 散射Schockley diode 肖克莱二极管Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Schrodingen 薛定厄Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor-controlled rectifier 可控硅Sendsitivity 灵敏度Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shield 屏蔽Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘硅Siliver whiskers 银须Simple cubic 简立方Single crystal 单晶Sink 沉Skin effect 趋肤效应Snap time 急变时间Sneak path 潜行通路Sulethreshold 亚阈的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Specific heat(PT) 热Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spreading resistance扩展电阻Sputter 溅射Stacking fault 层错Static characteristic 静态特性Stimulated emission 受激发射Stimulated recombination 受激复合Storage time 存储时间Stress 应力Straggle 偏差Sublimation 升华Substrate 衬底Substitutional 替位式的Superlattice 超晶格Supply 电源Surface 表面Surge capacity 浪涌能力Subscript 下标Switching time 开关时间Switch 开关Tailing 扩展Terminal 终端Tensor 张量Tensorial 张量的Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thermoelectricpovoer 温差电动势率Thick-film technique 厚膜技术Thin-film hybrid IC薄膜混合集成电路Thin-Film Transistor(TFT) 薄膜晶体Threshlod 阈值Thyistor 晶闸管Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Triangle generator 三角波发生器Triboelectricity 摩擦电Trigger 触发Trim 调配调整Triple diffusion 三重扩散Truth table 真值表Tolerahce 容差Tunnel(ing) 隧道(穿)Tunnel current 隧道电流Turn over 转折Turn - off time 关断时间Ultraviolet 紫外的Unijunction 单结的Unipolar 单极的Unit cell 原(元)胞Unity-gain frequency 单位增益频率Unilateral-switch单向开关Vacancy 空位Vacuum 真空Valence(value) band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Varistor 变阻器Vibration 振动Voltage 电压Wafer 晶片 Wave equation 波动方程Wave guide 波导 Wave number 波数Wave-particle duality 波粒二相性Wear-out 烧毁Wire routing 布线 Work function 功函数Worst-case device 最坏情况器件Yield 成品率Zener breakdown 齐纳击穿Zone melting 区熔法。
到9月9日,社保基金正式进入股市整整3个月,按照有关规定,社保基金必须通过基金管理公司在三个月内完成建仓,并且其持仓市值要达到投资组合总市值80%的水平。
与此前大受追捧的QFII概念相比,社保基金及其所持有的股票显然低调得多,但是在西南证券分析师田磊看来,至少就目前来看,社保基金无论是在资金规模,还是在持股数量上明显都强于境外投资者,其投资理念和行为更可能给市场带来影响。
基金操作的社保基金的选股思路并不侧重某个行业,而更看重企业本身的发展和成长性,并且现阶段的企业经营业绩和走势也不是基金重点考虑的方面。
目前入市的社保基金都是委托南方、博时、华夏、鹏华、长盛、嘉实6家基金管理公司管理。
社保基金大致是被分为14个组合由以上6家管理公司分别管理,每个组合都有一个三位数的代码,第一位代表投资方向,其中“1”指股票投资、“2”指债券投资;第三位数字则代表基金公司名称,其中“1”为南方、“2”为博时、“3”为华夏、“4”为鹏华、“5”为长盛、“6”为嘉实;另有107、108组合主要运作社保基金此前一直持有的中石化股票,分别由博时与华夏基金公司管理。
在许多社保基金介入的股票中经常可以看到开放式基金的身影,例如在被社保基金大量持有的安阳钢铁(600569)的前10大股东中,其第2、6、7、8、9大股东均为开放式基金,而社保基金则以持股500多万股位列第3大股东。
类似的情况也出现在社保基金103组合所持有的华菱管线(000932)上,其第二大股东即为鹏华行业成长证券投资基金,社保基金则以200多万股的持仓量位列第7大股东,此外,在其前10大股东中还有5家是封闭式基金。
对此,某基金公司人士解释说,在获得社保基金管理人资格后,6家基金公司成立了专门的机构理财部门负责社保基金的投资管理,但是其研究、交易系统等则与公募基金共用一个平台,因此社保基金和开放式基金在选股时才会如此一致。
针对“社保概念股”的走势,国盛证券的分析师王剑认为,虽然社保基金此次委托入市资金超过百亿元,但大部分投向是债券,而且由于社保基金的特殊地位,因此基金管理公司对社保基金的操纵策略应该是以“集中持股,稳定股价”为主,不大可能博取太高的收益。
Berry phase in electronic structure theoryIn quantum mechanics,Berry phase is a very important concept that describes the geometric properties of a system in parameter space.In electronic structure theory,Berry phase also plays an important role.It is not only of great significance for understanding the wave function and energy level of electrons,but also plays a crucial role in many physical phenomena.In the theory of electronic structure,Berry phase usually refers to the phase that the electron wave function evolves in the parameter space in a periodic lattice.This phase is dependent on system parameters and can affect the energy of electrons and the shape of wave functions.By calculating the Berry phase,one can gain a deeper understanding of the quantum behavior of electrons and the geometric properties of the system.In many physical phenomena,Berry phase plays an important role.For example,in spintronics, Berry phase can affect the spin state and magnetization direction of electrons.In topological insulators,Berry phase and topological properties are closely related and can affect the band structure and surface state of electrons.In addition,Berry phase can also affect optical and magnetic properties,making it widely applicable in materials science and physics.In recent years,with the continuous development of computer technology,calculating Berry phase has become a hot research field.Many numerical methods and computational software have been developed for calculating Berry phases and related physical quantities.These methods and software can not only be used for theoretical research,but also for the analysis and simulation of experimental data.In summary,Berry phase is a very important concept in electronic structure theory.It is not only of great significance for understanding the wave function and energy level of electrons,but also plays a crucial role in many physical phenomena.With the continuous development of computer technology,calculating Berry phase has become a hot research field,providing important tools and means for theoretical and experimental research.。
1.IntroductionMulti-atom,naked metal clusters are increasingly thesubject of investigation by complex physical and quantum-chemical methods,for example,in nanotechnology [1,2]be-cause of their special properties in the transitional regionbetween molecular and solid-state chemistry.[2]The interest instructure of such clusters is vividly illustrated by the 102mhigh Atomium in Brussels,which represents an Fe 9sectionfrom the structure of solid iron enlarged 150billion times(Figure 1).Clearly the creators of the Atomium assumed that an Fe 9molecule would have the same structure as a section from thesolid structure of iron,since they describe their design as anFe 9atomic molecule.However,as far as we are aware there isno experimental proof for the existence of such a structureofFigure 1.The Atomium in Brussels.a molecular Fe 9cluster.To obtain information on the arrangement of metal atoms in multiple-atom clusters,chemists have for many years been attempting to synthesize ligand-protected metal-atom clusters to compare their struc-Metalloid Aluminum and Gallium Clusters:Element Modifications on the Molecular Scale?Andreas Schnepf and Hansgeorg Schnˆckel*Dedicated to Professor Dieter Fenske on the occasion of his 60thbirthday[*]Prof.Dr.H.Schnˆckel,Dr.A.SchnepfInstitut f¸r Anorganische ChemieUniversit‰t Karlsruhe (TH)Engesserstrasse,Geb.30.45,76128Karlsruhe (Germany)Fax:( 49)721-608-4854E-mail:hansgeorg.schnoeckel@chemie.uni-karlsruhe.deREVIEWSREVIEWS H.Schnˆckel und A.Schnepfture and properties with that of the corresponding solid metal.[2]We have described such clusters,which contain both ligand-bearing and naked metal atoms that are only bonded to other metal atoms,as metalloid,[3]to express,in accordance with the Greek word eidoj(ideal,prototype),that the ideal form or the motif of the solid structure can be recognized in the topology of the metal atoms in the cluster.The original limits of the term metalloid–used,for example,for the elements silicon and germanium which are metal-like with respect to certain macroscopic properties(e.g.metallic luster)–were extended to include the metalloid clusters,thus accessing an additional structural level,which was only possible through crystal structure analysis.In general such metalloid clusters contain more direct metal±metal contacts than metal±ligand contacts.This means that metalloid clusters represent a sub-group of the extensive metal-atom cluster group in which,according to the definition of Cotton,[4]non-metal atoms may also be present. Until a few years ago,metalloid clusters were known exclusively for the noble transition metals since these could be handled with relative ease(e.g.in aqueous solution).The [Au55(PPh3)12Cl6]cluster[5]is the prototype of this family. Unfortunately no experimental structure data has been determined for this cluster since suitable crystals are not available.The,at the time,largest metalloid noble-metal clusters to be structurally determined contain6naked Pt ([Pt6Ni38CO48H]5À),[6]11naked Pd([Pd59(CO)32(PMe3)21]),[7] and–since2000–55naked Pd atoms with no ligand con-nections([Pd145(CO)60(PEt3)30];Figure2).[8]Therefore it was very surprising when a metalloid cluster with57naked aluminum atoms([Al77R20]2À,R N(SiMe3)2)was prepared and structurally determined in our group about five years ago(Figure3).[9]This result was all the more surprising since the synthesis of the first molecularcompound Figure2.Molecular structure of the metalloid noble-metal clusters a)[Pt6Ni38(CO)48H]5Àb)[Pd59(CO)32(PMe3)21],and c)[Pd145(CO)60-(PEt3)30].The naked metal atoms are highlighted incolor.yered representation of the arrangement of the77Al atoms [1 12(red) 44(yellow) 20(blue)]in the metalloid cluster[Al77{N-(SiMe3)2}20]2À(5).A.SchnepfH.SchnˆckelREVIEWS Metalloid Aluminum and Gallium ClustersFigure 4.Schematic representation of the first diallane.([Al 2{CH(SiMe 3)2}4];Figure 4)with a 2electron 2center (2e2c)aluminum ±aluminum bond had only been achieved in 1988.[10]In this case,and in many others,mainly smaller aluminum and gallium compounds were prepared,usually by traditional synthesis methods [11±14](e.g.:dehalogenation reac-tions:RMX 2 Na;or reactions with ™GaI∫originating from ultrasonic treatment [15]).Such methods will only be discussed in passing in this review.We have developed another synthesis variant in which the gaseous monohalides,prepared at around 10008C,are sub-sequently isolated in metastable solutions at À788C.[16,17]The halogen atoms are substituted by bulky groups and in a parallel disproportionation reaction (e.g.3AlCl 32Al AlCl 3),large Al or Ga clusters are formed.Analogue to the above-mentioned Al 77cluster,we have also succeeded recently by such means to synthesize further metalloid aluminum and gallium clusters with diameters on the nanometer scale.In these cases the topology of the metal atoms in the clusters usually reflects that of the metal,or it can be used to give an indication of element modifications yet to be discovered.[16b,c,23]2.Synthesis of Metastable Aluminum-and Gallium-Halide Solutions2.1.Principles and Experimental DetailsThe equilibrium between the liquid metal and gaseous mono-and trihalides is described for the example of aluminum [Eq (1)].2Al (l) AlCl 3(g))*1000o C10mbar3AlCl (g)(1)The conditions for gallium are almost the same,with the exception that to achieve a comparable ratio of the partial pressures of mono-to trihalide the reaction temperature should be about 100K lower.In general,as a result of the increase in entropy,the equilibrium of this endothermic reaction shifts in favor of the gaseous monohalide with increasing temperature and with decreasing total pressure.[18]The transport of aluminum in the presence of AlCl 3as described by Klemm et al.and later by Sch‰fer is also based on the reaction of Equation (1).[19]The partial-pressure behavior of the gaseous components is solely determined by the thermodynamic data of the mono-and trihalides and the molten metal,which means that it does not matter which halogenation medium is used in the preceding reaction.Thanks to its easy handling and to ensure a continuous stream of gaseous AlX (X Cl,Br,I)we used a flowof the respective hydrogen-halide gas (e.g.HCl)at about 10008C over aluminum [Eq.(2)].Al (l) HCl (g)>1³2H 2 AlCl (g)(2)Under these conditions (ca.10À1mbar total pressure),for example,for the chloride system,there is a more than 20-fold excess of AlCl over AlCl 3.To investigate the reactivity of molecular monohalides,we had previously carried out many matrix isolation experiments,which showed that AlX species preferentially oligomerize in solid argon.For example,a ring-shaped structure with D 2h point symmetry was inferred from the spectroscopic data for the dimeric species.[20,16a]In addition to oligomerization,only the very first reaction and the most recent reaction from the matrix experiments will be mentioned here:As far back as 1978we were able to demonstrate the formation of the first threefold coordinate aluminum hydride halide (HAlCl 2)from HCl and AlCl,[21]and recently we were able elucidate the reaction between AlF and O 2in solid argon.[22]AlF was generated at about 10008C by passing CF 3H,which was used instead of HF for ease of handling,over molten Al.In addition to an FAlO 2peroxide with C 2v point symmetry,an unexpected FAl(O 2)2species with slightly distorted C 2v point symmetry was formed.The formation of such compounds (FAl(O 2)2has a triplet ground state!)is an indication that similar species could also be formed as primary products during the surface oxidation of metallic aluminum.The positive results from the matrix experiments,which were started about 12years ago,have enabled us to produce monohalides in gram amounts for synthesis purposes.[17]Although the experimental realization of this idea has been described many times,[16,23]it will be presented briefly here because this experiment forms the basis for all the chemistry to follow.The required co-condensation apparatus is shown in Figure 5.At the center of a vacuum system of about30-liter Figure 5.Scheme of the co-condensation apparatus:A stainless steel vessel (30L);B solvent input (LM/D);C Al in the graphite cell with resistance heating;D drainage channel;E cooling shield;F Schlenk line;G Dewar with dry ice (À788C);K cooling water;HX hydrogen halide gas;HV high vacuum.volume is a high-temperature reactor which contains molten aluminum at around 10008C in several graphite chambers.A flowof hydrogen-halide gas is directed through these reactionREVIEWSH.Schnˆckel und A.Schnepf chambers,and the flowis measured by means of the pressure drop in a storage vessel.In general about 40mmol AlX is synthesized in two hours.After exiting the reactor the gaseous AlX molecules condense,without undergoing further colli-sions,on the cooled outer walls of the stainless steel vacuum vessel at À1968C.To prevent the aggregation of the AlX species which disproportionate to form aluminum metal,that is,the reverse reaction in Equation (1),when warmed to above À1008C,an excess of a suitable solvent must be co-condensed with the monohalide molecules.We generally use toluene to which a variable amount of a donor component has been added ( 3,Et 2O,THF).When the solid solvent mixture is melted at about À1008C,deep red solutions are usually obtained which subsequently disproportionate ac-cording to Equation (1)in the temperature range À40to 508C depending on the halide and the donor and its concentration to the metal and the corresponding trihalide.The metastable AlX and GaX solutions are the starting points for the chemistry described in the following sections.2.2.Limitations and Advantages of the AlX/GaX Synthesis MethodThe limitations of the synthesis method described in Section 2.1arise from the availability and capabilities of a precision mechanical workshop,since it requires the con-struction of high-vacuum apparatus in stainless steel involving many vacuum parts,and high-and low-temperature compo-nents.The optimization of our apparatus has continued over many years and with new information arising from almost every experiment the apparatus undergoes constant technical improvement.Despite the limitations of the method that mainly arise from the sensitivity and weaknesses of the apparatus,there are many advantages over classical proce-dures:*Subvalent halides such as the ring-shaped Al 4X 4[24]and Ga 8X 8species (Figure 6),[25]the first Al I and Ga I halides to be structurally investigated,are synthesized directly from the above-mentioned primary solutions;this is only possible by this method.The same applies to the first aluminum subhalides with a polyhedral Al framework:Al 22X 20(X Cl,[26]Br [27]).These Al 22compounds will be described in Section 3.2.Other halides and partially sub-stituted halide compounds are the subject of a recently published review.[28]*In the classical reduction of RGaX 2compounds,for example,with reductants such as alkali metals,temper-atures of 50to 1108C are generally applied which means that only GaR species that contain kinetically stable GaR bonds can be synthesized (e.g.GaCp*;[29]Cp* C 5Me 5):Metastable GaX solutions are so reactive that almost every metathesis reaction (e.g.with LiN(SiMe 3)2)proceeds at temperatures above À788C.This means that our method can be used to obtain,for example,the unsubstituted compounds GaCp [30]and AlCp [31](Cp C 5H 5)in solution at lowtemperatures.*Disproportionation reactions that proceed even under mild conditions (see above)can give rise to metalloid Al and Ga clusters that contain an increasing number of naked Al or Ga atoms with increasing reaction temperature.When applied to gallium chemistry the trisyl group (C(SiMe 3)3)provides some impressive examples.The classical dehalo-genation methods of Uhl et al.enabled the first tetrahedral Ga 4R 4compound (R C(SiMe 3)3)to be synthesized [11],w e succeeded in synthesizing a Ga 8compound from a GaBr solution in toluene/THF at lower temperatures [32]in which tetrahedral Ga 4R 3groups are connected over a Ga 2unit (i.e.two naked Ga atoms (see Figure 19).At room temperature the same reaction yields a Ga 19R 6cluster,[3]that contains 13naked Ga atoms (see Figure 27),which demonstrates that the disproportionation reaction at this temperature proceeds much further along the path towards generating the metal.Both compounds will be discussed in more detail in Section 4.3.3and 4.4.3.3.Aluminum Clusters 3.1.Metalloid Aluminum Compounds After the first compound with a 2e2c Al ÀAl bond was synthesized by Uhl (Section 2.2)[10]and after we had synthe-sized AlCp*,[33]the first organo ±Al I compound,the objective was to synthesize metalloid aluminum-cluster compounds with as many naked Al atoms,that is,atoms with no attached ligands,as possible.The N(SiMe 3)2ligand proved to be a particularly favorable ligand in this endeavor since it was apparent that the substitution of the halogen atoms (AlX LiR 3LiX AlR)and the disproportionation of the AlX species (3AlX 32Al AlX 3)occur in the same temperature range.Reactions in which substitution is favored tend to the formation of oligomeric AlR species (e.g.(AlCp*)4),whereas when substitution is hindered or when there is no suitable substituent the formation of aluminum metal through dis-proportionation of the AlX species is observed.In the following section only metalloid aluminum clusters are discussed that are protected by an outer shell of theabove-Figure 6.Molecular structures of binary halides Al 4X 4¥4NEt 3(X I,Br;top)and Ga 8I 8¥(PEt 3)6(bottom).Of the donor molecules only those atoms directly bonded to the metal atoms are shown.REVIEWS Metalloid Aluminum and Gallium Clustersmentioned N(SiMe 3)2ligand.These clusters therefore contain a naked Al n core surrounded by AlN(SiMe3)2groups withstrong 2e2c Al ÀN bonding,in other words bonding between Group III/V elements.The size of the Al n cluster core is determined by the reactivity of the AlX solution with respect to disproportiona-tion.Therefore,for a particular halide the size of the resulting cluster can be increased by an increase in temperature:Starting from an AlCl solution,for example,the cluster size progresses from an [Al 7R 6]À(1)cluster at À78C [34]through an[Al 12R 6]À(2)cluster [35]at room temperature through to an[Al 69R 18]3À(4)cluster after warming briefly to 608C.[36]When,however,a less reactive AlI solution is used,at room temperature a partially substituted Al 14cluster 3is ob-tained,[37]whereas after warming briefly to 608C the above-mentioned [Al 77R 20]2À(5)cluster [9]forms;in all cases R is the N(SiMe 3)2ligand.The cluster compounds 1±5are extremely sensitive to moisture and air and may even spontaneously combust after only brief exposure to the atmosphere.There-fore handling these compounds for all physical measurements can be exceptionally difficult (see Section 4.4.6).This behavior contrasts dramatically with that of the metalloid noble-metal clusters (e.g.the Au 55[5]and Pd 145species [8]),some of which can be handled in aqueous solution and in contact with air.This difference is to be expected:it is comparable to the differences between the noble and the base metals.All the above-mentioned metalloid Al clusters 1±5form an Al n cluster framework,which can be described as a distorted section from the structure of solid aluminum.The geometries of the Al n frameworks of Al clusters 1±5are shown in Figure 7a ±e,whereby the distance between the center points of the Al atoms furthest apart increases from 5.46to 13.35äin the series of Figures 7a 3e.Figure 7.Geometrical arrangement of the Al atoms of the metalloid aluminum clusters:a)[Al 7R 6]À(1);b)[Al 12R 6]À(2);c)[Al 14R 6I 6]2À(3);d)[Al 69R 18]3À(4);e)[Al 77R 20]2À(5);R N(SiMe 3)2.The description of these clusters as molecular nanostruc-tured element modifications therefore appears plausible.This definition is further elucidated in Figure 8which shows the topological relationship of clusters 1and 2to the structureof Figure 8.Molecular structures of the metalloid aluminum clusters [Al 7R 6]À(1;left)and [Al 12R 6]À(2;right)and the corresponding sections from the solid-state structure of elemental aluminum.R N(SiMe 3)2.solid aluminum.[38]The metallic luster of crystals of clusters 4and 5is a further similarity to aluminum.The relationship of the ™wheel-rim-type∫structure of the Al 14compound 3to the metal can be demonstrated by a 308rotation of the two centered Al 6rings followed by a shift of the six-membered rings towards each other.The other possibility of the formation of an Al 14polyhedron with D 6d point symmetry by displacement of the naked central atom has been shown to be energetically unfavorable by quantum-chemical calculations:The observed metalloid structure is favored over the anticipated polyhedral structure [39]described by Wade.[67]The principle and the significance of metalloid clusters for the understanding of the formation of metals are made clear by the two largest Al clusters 4and 5(Figure 7d,e)which are almost the same size with 69and 77Al atoms and 18and 20N(SiMe 3)groups.In both cases a central Al atom is surrounded by 12nearest neighbors.Despite the great similarity between the two clusters–the coordination number of the Al atoms decreases from the center to the periphery,the mean Al ±Al distance decreases from the center to the periphery indicating that the Al ÀAl bonds have become more localized and have more molecular character from the inside to the outside–the coordination spheres of the central Al atoms are significantly different:The Al 13core of the Al 69cluster 4can be described as distorted D 5h (this geometry is often described as decahedral [40])whereas the central Al atom in the Al 77cluster 5has been shown to have an icosahedral coordination sphere that is distorted in the direction of a cuboctahedron (Figure 9).Therefore both cases showa different geometry than for the noble-metal clusters:for example,for the Au 55cluster a cubooctahedral and icosahe-dral environment has been postulated and for the Pd 55framework of naked Pd atoms at the center of the Pd 145cluster an almost undistorted icosahedral Pd 13unit has been observed.[8]This situation demonstrates that for these large metalloid clusters (Al 694,[36]Pd 145,[8]Al 775,[9]and a larger Ga 84REVIEWS H.Schnˆckel und A.SchnepfFigure9.Arrangement of the Al atoms in the metalloid clusters a)[Al69R18]3À(4)and b)[Al77R20]2À(5)in a layered representation:41 12(red) 38(yellow) 18(blue)Al atoms;51 12(red) 44(yellow) 20(blue)Al atoms.R N(SiMe3)2.cluster10,which will be described in Section4.4.6),for which structural data are available,there are significant differences in the centers both amongst the clusters themselves and to the corresponding metals,whereby the Pd145cluster is the most similar with respect to the topology of the metal.However,in all cases the distance of the12nearest neighbors from the central atom is shorter than that in the metal,which shows that the bonding has shifted away from predominantly delocalized in the metal in the direction of localized molecular bonding.We find the significant differences in the Al13center of the Al69cluster and the Al77cluster frameworks of particular interest.Apparently even small changes in the cluster shell, which are probably too small to be observed with common nanoscopic methods(e.g.AFM:atomic force microscopy), lead to changes in the topology of the metal framework at the center which then affect the electronic properties.Unfortu-nately apart from a preliminary band-structure calculation of the Al77cluster[41]there have been no detailed investigations that could lead to a deeper understanding of the interactions between the cluster shell and the core.Such investigations, which could make use of the experimental structural data, could serve to model metal-surface reactions,such as the dissolution of aluminum.The structures of4and5suggest that Al I R units are formed primarily on the surface.According to the observations of4and5,such primary reactions could also lead to changes in the interior of the metal,even in the nanometer range.To approach an understanding of the relationship between the structures of the Al69and Al77clusters and that of metallic aluminum,we have compared frameworks of51and57naked Al atoms from these two clusters with an Al55unit from the metal.To do this,single-point self-consistent-field(SCF) calculations were carried out based on the experimental data from all three species[36]and the volume enclosing an area of the same electron density(0.004eä;Figure10).The results showed that the mean atomic volume(volume of the Al n cluster framework/number of Al atoms)decreases in the order Al513À>Al573À>Al553À.For improved comparability the same charge of3À,was specified.Although the AlÀAl bonds of the Al55cluster were the longest(2.86ä,as in Al metal)the Figure10.Arrangement of the naked Al atoms in[Al69R18]3À(4;section of the Al513Àstructure)and[Al77R20]2À(5;Al573Àsection),and an Al55section from the solid-state structure of elemental aluminum in ball-and-stick and space-filling representations including the calculated mean atomic volumes for the Al atoms in these three clusters.R N(SiMe3)2.increase in the coordination numbers in the order Al513À< Al573À<Al553Àleads to a contraction of the Al n cluster framework.The stepwise disproportionation of Al I com-pounds,which always yields Al metal at temperatures above around608C,is therefore associated with a contraction of the metal atom framework.This conclusion suggests that a closer investigation of the precipitates with metallic luster that are sometimes observed to form metallic mirrors on the vessel walls after disproportionation would be worthwhile.These could be larger Al clusters with cores of Al atoms that have contracted even further in the direction of the metal.All previously discussed metalloid Al clusters showthat the favored arrangement of Al atoms is a closest packing as in the metal,whereby the observed distortions reflect the adaptation of the cluster core to the AlR™corset∫.Since the packing density comes ever closer to that of the metal with increasing cluster size(Figure10),it is conceivable that there is an alternative pathway during the early stages of cluster for-mation that could lead to a less compact modification of aluminum.This hypothesis may not be so unlikely since the other Group III metals,boron and gallium(see Section4), also exist in several modifications.An experimental indication for a hypothetical b-aluminum modification is given by the results discussed in the following Section3.2.3.2.Al22Clusters as Intermediates in the Formation of Hypothetical b-AluminumDirectly after the condensation of AlX species,for example, in the presence of strong donors,the donor-stabilized Al4Br4¥4NEt3compound[24]is obtained in which the bonding can be described by means of classical2e2c bonds(see Section2.2). With weaker donors such as THF,the first polyhedral Al subhalides Al22X20¥12L(X Br(6),[27]Cl(7),[26]L THF, tetrahydropyran(THP))with a unique structure were re-cently obtained(Figure11).The icosahedral Al12core of6andREVIEWS Metalloid Aluminum and Gallium ClustersFigure11.Molecular structure of Al22Br20¥12THF(6).Of the THF molecules only the O atoms directly bonded to the Al atoms are shown. 7is reminiscent of the polyhedral boron subhalides(such as B4X4,B8X8,B9X9,and B12X122À),[42]in which each halogen atom X is directly bonded to a boron atom of the polyhedral framework.In contrast,in the Al22halides6and7,ten more Al atoms are directly bonded each to an Al atom of the icosahedral Al12framework to present a unique configura-tion.The outer ten Al atoms are additionally bonded each to two halogen atoms and saturated by a donor molecule.The apex and base atoms in the Al12icosahedron are naked,that is, they are each only shielded by one donor molecule.This type of metal-atom topology is surprising because it has not been observed for any element.It could be expected for boron clusters since,for example,the a-boron modification[43]in which a network of molecular icosahedral cluster units are to some extent connected by boron±boron bonds.Despite the great sensitivity of these Al22subhalides,it was possible to obtain solid-state27Al NMR and X-ray photoelectron spectroscopy(XPS)measurements,which showed indeed that three electronically different types of Al atoms are present.[26,44]With respect to the bonding of the Al atoms the structure of these Al22X20clusters shows some similarity to bonding in b-rhombohedral boron(which contains a B84unit with a central icosahedral B12framework of which all the boron atoms are connected to B6units[27]).Therefore,ab initio calculations were carried out on the stability of a hypothetical Al modification with the structure of a-boron.[26]The calculations showthat w ith an expansion of the closest-packed Al atoms in aluminum metal by about30%a structure analogous to a-boron would be energetically more stable(Figure12).An expansion of this type would be associated with an energy consumption of about33kJ molÀ1.As was shown in the discussion of the Al69and Al77clusters(4and5;Figure7d,e), a contraction in the direction of the bulk-metal structure does take place during disproportionation,thus the intermediate existence of a b-Al modification with a larger atom volume cannot be excluded.This hypothesis is supported bymodel Figure12.Calculated energy pathway for the real(––a-Al)and hypo-thetical(±±±b-Al)aluminum solid-state modifications during expansion. calculations that reveal that intermediate compounds analo-gous to6and7could be synthesized during disproportiona-tion of AlCl¥H2O to Al(solid)and AlCl3,that could then react further via a hypothetical b-Al modification to the final products Al(solid)and AlCl3(Figure13).[26,27]Figure13.Calculated energy scheme for the modeled disproportionation of AlCl to Al and AlCl3in the presence of H2O as the donor.For gallium,its wide range of structures containing molecular units will be discussed in Section4,[23]the most recent calculations performed in an analogous fashion predict that a previously unknown modification with the a-boron structure could be much easier to obtain since the required energy input during expansion is only about20%of that required for Al.[84]To summarize it can be stated that metalloid Al clusters which form structures with a constant ligand shell(N(SiMe3)2) showa close similarity w ith the topology of crystalline aluminum.The size of the clusters,which are intermediates on the way to the bulk metal,can be increased by increasing the temperature,however,temperatures above about608C lead exclusively to the metal.It is possible that there isREVIEWSH.Schnˆckel und A.Schnepf another reaction pathway which would lead initially to a polyhedral Al 22X 20cluster.There are many indications that this cluster can be regarded as an intermediate on the way to a newhypothetical Al modification.4.Metalloid Gallium Compounds 4.1.The Modifications of the Element The structurally demonstrated existence of seven modifi-cations for elemental gallium gives rise to the expectation of a larger diversity of metalloid clusters than observed for aluminum,for which only one element modification is known.To classify the topologies of the Ga atoms in all the Ga clusters described below,the most prominent structural features of the seven modifications are described in the following section.In Figure 14the structural units typical ofthe normal-pressure modifications a -,[45]b -,[46]g -,[47]and d -gallium [48]and for the high-pressure modifications Ga-II and Ga-III [49]are shown.Recently under very high pressure a Ga-IV modification was detected which has a fcc packing of the Ga atoms.[49b]Figure 14.Sections of the normal-pressure solid-state modifications a -,b -,g -,and d -gallium and the high-pressure modifications Ga-II and Ga-III.For a -gallium (coordination number 1 2 2 2)the short Ga ÀGa bond of 2.45äis characteristic,so that a -gallium is also described as a molecular metal made up of Ga 2dumb-bells.For the low-temperature phases b -,g -,and d -gallium the following characteristic units are observed:the ladder struc-ture (coordination number 2 2 2 2)for b -gallium,Ga 7-rings that stack to form tubes and a centered Ga n ™wire∫observed for g -gallium,and connected Ga 12icosahedra for d -gallium.In all cases pseudomolecular gallium units can be discerned that indicate a degree of covalent bonding,and therefore similarity to the neighboring element boron.In contrast,in the three high-pressure modifications Ga-II,Ga-III,and Ga-IV high coordination numbers and topologies of Ga atoms are observed (Figure 14)that point to analogies with the packing schemes of ™true∫metals such as the neighboring element aluminum.[49,50]The diversity of bonding options for Ga atoms to each other that are apparent from the different modifications can also be observed in the metalloid clusters.These metalloid clusters could also be described,perhaps more suitably and compre-hensively,as elementoid clusters since the atomic topologies observed are similar to those found in the bulk element.The special features of gallium in comparison to boron and aluminum in the elemental state,indicate that it would be less than helpful to describe the metal-rich compounds of all three elements on the basis of a single rule even though all three have the same number of valence electrons.The lack of a single ordering principle is a shortcoming,particularly for the gallium clusters,since as a result of their improved synthesis procedures,there is a larger number of them than the corresponding aluminum clusters.A purely formal means of classification for the gallium clusters would be to take,in addition to the oxidation number,the number of gallium atoms to demonstrate analogies to the topologies of the elemental state in the corresponding element modification.[51]4.2.Gallium ±Gallium BondsBefore starting the discussion of metalloid gallium clusters with several Ga ÀGa bonds,it would be appropriate to make a fewbasic remarks on gallium ±gallium bonding and a critical comment on gallium ±gallium triple bonds:A molecular organometallic compound containing the first Ga ÀGa 2e2c bond [52]was synthesized by Uhl et al.at the end of the 1980s (Figure 15a).[53]To clarify the term metal ±metal bond,weFigure 15.Schematic representation a)of the first digallane and b)[Ga 8{C(SiMe 3)3}6](9).have designated the [Ga 8R 6]cluster (R C(SiMe 3)3;Fig-ure 15b,and Figure 19),mentioned in Section 2.2,as a prototypic compound [32]with a 2e2c metal ±metal bond,this is because each of the atoms participating in the Ga ÀGa bond does so without bridging atoms and is exclusively bonded to other metal atoms of the same type.With the help of quantum-chemical calculations on the model compounds [Ga 2H 4]and [Ga 4H 4]and the experimental data for [Ga 2R 4]and [Ga 4R 4]the strength of the metal ±metal bond in [Ga 8R 6]can be classified as lying between that of a classical 2e2c bond and a 2e3c bond.[59]Such bonding found in cluster elements (e.g.in fullerenes and Zintl ions)is currently of intense interest and a reviewarticle on this topic has recently appeared.[54]Although there are no indications for the existence of Ga ÀGa double bonds,a discussion regarding the ™Ga ÀGa triple bond∫has raged for several years.[55]This was initiated。
Modern Physics 现代物理, 2021, 11(3), 41-51Published Online May 2021 in Hans. /journal/mphttps:///10.12677/mp.2021.113006Al n P n (n = 2~9)团簇结构与性质的理论研究彭从一1,马磊1*,马丽2,和一鸣1,王文杰11成都理工大学地球物理学院,四川成都2吉利学院汽车工程学院,四川成都收稿日期:2021年4月16日;录用日期:2021年5月14日;发布日期:2021年5月21日摘要团簇的结构和稳定性具有明显的尺寸效应,研究其性质有助于人们对物质有更深入的认识。
通过结构搜索结合密度泛函方法,我们系统地研究了Al n P n (n = 2~9)团簇的结构、稳定性和电子性质。
随着尺寸的增大,AlP团簇逐渐接近笼状结构,AlP团簇中Al原子和P原子之间交替成键,稳定性增强,Al原子和P原子间的相互作用逐渐减弱。
能隙研究表明Al n P n (n = 2~9)团簇表现为半导体性质。
Al-P原子之间的电荷转移比Al-Al和P-P间更强,表现出离子性质。
成键分析表明,Al-P之间有较强的共价相互作用。
关键词AlP团簇,密度泛函理论,结构与性质Theoretical Study on the Structure andProperties of Al n P n (n = 2~9) ClustersCongyi Peng1, Lei Ma1*, Li Ma2, Yiming He1, Wenjie Wang11Department of Geophysics, Chengdu University of Technology, Chengdu Sichuan2College of Automotive Engineering, Geely University of China, Chengdu SichuanReceived: Apr. 16th, 2021; accepted: May 14th, 2021; published: May 21st, 2021AbstractThe structure and stability of clusters have prominent size effects, and studying their properties is helpful for people to have a deeper understanding of matter. The structures, stability and elec-*通讯作者。
/CRNucleation and Growth of Nanoparticles in the AtmosphereRenyi Zhang,*,†,‡,§Alexei Khalizov,†Lin Wang,‡Min Hu,§and Wen Xu††Department of Atmospheric Sciences and Department of Chemistry,Center for Atmospheric Chemistry and Environment,Texas A&M University,College Station,Texas77843,United States‡Department of Environmental Science&Engineering and Institute of Global Environment Change Research,Fudan University, Shanghai200433,China§State Key Laboratory of Environmental Simulation and Pollution Control,College of Environmental Sciences and Engineering, Peking University,Beijing,100871,ChinaCONTENTS1.Introduction B2.Overview of Vapor Nucleation D2.1.Nucleation Theories and ComputationalApproaches D2.1.1.Classical Nucleation Theory D2.1.2.Kinetic Theories F2.1.3.Molecular Dynamics and Monte CarloMethods F2.1.4.Density Functional Theory G2.1.5.Nucleation Theorem G2.2.Nucleation Experiments H2.2.1.Adiabatic Expansion Approaches H2.2.2.Diffusion Chamber H2.2.minar Flow Chamber I2.2.4.Turbulent Mixing Chamber I2.2.5.Continuous Generation of NucleatingVapors from Chemical Reaction sources Iparison between ExperimentalResults and Nucleation Theories I 3.Nucleation of Nanoparticles in the Atmosphere K3.1.Atmospheric Measurements K3.1.1.Concentrations and Size Distributions ofAtmospheric Nanoparticles L3.1.2.Chemical Composition of AtmosphericNanoparticles M3.1.3.Measurements of Charged and NeutralAtmospheric Clusters Pboratory Studies R3.2.1.Binary Nucleation of H2SO4ÀH2O R3.2.2.Ternary Nucleation of H2SO4ÀH2O Involv-ing Ammonia and Amines T3.2.3.Nucleation of H2SO4ÀH2O Assisted byOrganic Acids U3.2.4.Nucleation of Iodine Oxides W3.2.5.Ion-Induced Nucleation X3.2.6.Chemical Composition,Reactivity,andThermodynamics of Nucleating Clusters Y3.2.7.Other Species AA3.3.Theoretical and Computational Studies AA3.3.1.Quantum Chemical Calculations AA3.3.2.Molecular Dynamics and Monte CarloSimulations AD3.4.Parameterizations of AtmosphericNucleation AF 4.Growth of Nanoparticles in the Atmosphere AG4.1.Role of the Kelvin(Curvature)Effect in Growthof Nanoparticles AH4.2.Condensation AI4.2.1.Condensation of Sulfuric Acid AI4.2.2.Condensation of Low-VolatilityOrganics AI4.3.Heterogeneous Reactions AJ4.3.1.Ammonia AJ4.3.2.Amines AJ4.3.3.Aldehydes AL4.3.4.α-Dicarbonyls AM4.3.5.Alcohols AN4.3.6.Other Species AO5.Numerical Treatment of Ambient NanoparticleNucleation and Growth Rates AP5.1.Measured Nucleation and Growth Rates AP5.2.Condensation Sink of Low-Volatility Vapor APbined Growth Including Condensationand Intramodal/Extramodal Coagulation AP5.4.Derivation of Nucleation Rates fromAtmospheric Measurements AQ 6.Summary and Future Research Needs AR Author Information AS Biographies AS Acknowledgment AT Glossary of Acronyms AT References AT Received:May17,20111.INTRODUCTIONThis review intends to critically assess recent findings related to nucleation and growth of atmospheric nanoparticles,with an emphasis on the understanding of these processes at a funda-mental molecular level.Aerosols (small particles suspended in air)can be directly emitted into the atmosphere from primary sources or be formed in the atmosphere through nucleation of gas-phase species.Aerosol nucleation events produce a large fraction of atmospheric aerosols.New particle formation occurs in two distinct stages,1i.e.,nucleation to form a critical nucleus and subsequent growth of the critical nucleus to a larger size (>2À3nm)that competes with capture and removal of the freshly nucleated nanoparticles by coagulation with pre-existing aerosols.Nucleation is generally de fined as creation of molecular embryos or clusters prior to formation of a new phase during the transformation of vapor f liquid f solid.This process is char-acterized by a decrease in both enthalpy and entropy of the nucleating system (i.e.,ΔH <0and ΔS <0).Hence,although thermodynamically favorable according to the first law of thermo-dynamics,(i.e.,exothermic)nucleation is hindered in entropy according to the second law of thermodynamics.A free energy barrier,ΔG (ΔG =ΔH ÀT ΔS >0),is often involved and needs to be surmounted before transformation to the new phase becomes spontaneous.Another major limitation in the nucleation and growth of atmospheric nanoparticles lies in signi ficantly elevated equilibrium vapor pressures above small clusters and nanoparti-cles,also known as the Kelvin (curvature)e ffect,which considerably restricts growth of freshly nucleated nanoparticles.Formation of molecular clusters occurs through random collisions and rearrangements of atoms or molecules of the existing phase (Figure 1a).Growth of a cluster can be repre-sented as a reversible,stepwise kinetic process.After reaching a critical size (the critical cluster or nucleus),further growth of the cluster becomes spontaneous.At each step,formation and decomposition of a cluster can be described by fundamental kinetic rate theories.A cluster can form homogeneously within the original phase or heterogeneously on various irregularities,such as pre-existing small particles or ions,which assist in surmounting the free energy barrier associated with formation of an interfacebetween the small cluster of the new phase and the original phase (Figure 1b).The lifetime of clusters is extremely short,but since a very large number of clusters form and dissociate at any time,a few can reach the critical size and continue to grow sponta-neously to form larger particles.Atmospheric nucleation of aerosols from vapors 1,2is,in principle,analogous to that of freezing of liquids,3crystallization of supersaturated solutions,4and formation of vapor bubbles inside the bulk liquid;5all proceed by the same basic mechanism.The common feature of the nucleation process is that there exists a dividing surface 6,7at the critical nucleus that separates the properties of the original and new phases.From an energetic perspective,the free energy of cluster formation,ΔG ,increases with cluster size prior to but decreases after the critical nucleus,reaching a maximal value at the critical size,i =i *.Hence,the critical nucleus can be identi fied if the free energy surface leading to cluster growth is available 6ð∂ΔG =∂i Þi ¼i ü0:ð1:1ÞThe properties of the critical nucleus are central to nucleation theory.The rate at which nucleation occurs is related to the chemical makeup of the critical nucleus and the gaseous con-centrations of the nucleating species and is an important variable in simulations of aerosol formation in atmospheric models.1Nucleation from the vapor phase is homomolecular when a single type of a gas is involved in formation of a critical nucleus and heteromolecular when several types of gases are involved in formation of a critical nucleus.In the absence of existing heterogeneities,homomolecular nucleation requires an extre-mely high supersaturation.For instance,homogeneous nuclea-tion of pure water vapor requires a supersaturation of a few hundred percent.Since such a condition is hardly realized in the atmosphere,homomolecular nucleation of water vapor,leading to formation of cloud droplets,is always heterogeneous in nature,taking place on pre-existing water-soluble seeds,i.e.,cloud condensation nuclei (CCN).In fact,clouds would have never formed in the Earth ’s atmosphere in the absence of CCN.Homogeneous nucleation of atmospheric nanoparticles,the focus area of this review,is always heteromolecular,involving two (binary),three (ternary),orpossibly more mutually interactingFigure 1.Schematic representation of the transformation from the molecular complex through the critical nucleus to 2À3nm nanoparticle (top)and associated free energy variation (bottom).(Reprinted with permission from ref 1.Copyright 2010American Association for the Advancement of Science.)vapors (multicomponent).The abundance,volatility,and reac-tivity likely determine the potential of a chemical species as a nucleation precursor.Atmospheric aerosol formation is closely linked with the gas-phase chemistry because the abun-dances required for nucleation to occur are achieved through a gradual increase in the concentration of the nucleating vapors produced from photo-oxidation of atmospheric gases,such as sulfur dioxide and volatile organic compounds (VOCs),includ-ing many saturated,unsaturated,or aromatic hydrocarbons,SO 2þOH f O 2,H 2OH 2SO 4ð1:2ÞVOCs þOH f O 2oxidized organicsð1:3ÞThe most common nucleating species is sulfuric acid because of its low vapor pressure at typical atmospheric temperatures,which is further reduced in the presence of water due to the large mixing enthalpy of these two substances.8À10The pre-sence of gaseous H 2SO 4in concentrations exceeding 105molecules cm À3has been shown as a necessary condition to observe new particle formation in the atmosphere.11,12In addition to sulfuric acid,a number of other nucleating pre-cursors,including atmospheric ions,ammonia,amines,organic acids,and iodine oxides,have been proposed to be involved in formation of the critical nucleus under di fferent ambient environments.The size and chemical make up of atmospheric critical nuclei are not well-known presently,because of the lack of existing analytical methods to directly probe the critical nucleus.Indirect measurements and theoretical calculations suggest that the critical nucleus has a diameter on the order of 1nm and consists of a relatively small number of molecules held together by noncovalent van der Waals (vdW)interactions.Since the molecules of known nucleating vapors possess a signi ficant dipole moment and/or contain a hydrogen atom connected with an electronegative atom (nitrogen or oxygen),electrostatic,polarization,and hydrogen-bonding interactions have been recognized to play a signi ficant role in formation of the smallest clusters.As clusters grow,proton transfer from an acid moiety (e.g.,H 2SO 4)to a base moiety (e.g.,H 2O or NH 3)becomes possible because the resulting ion pair is stabilized by interactions with surrounding polar molecules (e.g.,H 2O)within the cluster.Formation of an ion pair can signi ficantly increase the nucleation rate by reducing the free energy of the critical nucleus.However,current understanding of the role of proton transfer and other possible chemical processes in the nucleation of atmospheric clusters is still inadequate.Aerosol nucleation events,which are re flected as episodes with very high concentrations (up to 104particle cm À3or higher)of nanoparticles generated in a short period of time,are frequently observed in the free troposphere and under remote,urban,forested,and marine environments of the lower troposphere.Thermodynamically stable larger clusters and small nanoparti-cles formed during a nucleation event need to grow quickly so that they are not scavenged by coagulation through collisions with existing larger particles.The surface of pre-existing particles also acts as a condensation sink for nucleating vapors,reducing their concentration and inhibiting nucleation.Whereas conden-sation of low-volatility vapors and reversible partitioning of semivolatile vapors are commonly recognized as the major contributors to growth of aerosols,the role of heterogeneous chemical reactions between gas-phase chemical compounds andparticles is not well understood and is a subject of intensive research.13When reaching a size of about 50À100nm,aerosols become e fficient light scatterers and CCN.14Overall,during the atmospheric lifetime,the size of particles may vary over 5orders of magnitude,from a lower limit of about 1nm corresponding to stable molecular clusters to an upper limit of about 1mm for cloud droplets.Growth of nanoparticles driven by condensation,partitioning,heterogeneous chemical reactions,and coagulation is another focus area of this review.Atmospheric aerosols have profound impacts on the Earth Àatmosphere system,in fluencing the weather,climate,atmo-spheric chemistry and air quality,ecosystem,and public health.15Those particles cool the atmosphere by directly scattering a fraction of the incoming solar radiation back to space,an e ffect commonly referred to as direct climate forcing.By acting as CCN and ice nuclei (IN),aerosols play an important role in controlling cloud formation,development,and precipitation,impacting the albedo,frequency of occur-rence,and lifetime of clouds on local,regional,and global scales,16À21which is often referred to as indirect climate forcing.Presently,the aerosol direct and indirect e ffects represent the largest uncertainty in climate predictions.22Also,chemical reactions occurring on the surface or in the bulk of aerosols 23,24may alter the properties of aerosols and the gaseous composition of the atmosphere.For example,hetero-geneous reactions on particle surfaces convert inactive chlorine species into photochemically active forms in the middle atmo-sphere (between 20and 50km altitudes),leading to depletion of stratospheric ozone,25À35which acts as a UV shield.In the lower atmosphere (below 20km),particle-phase reactions can modulate formation of tropospheric ozone,36À41which is a key criteria air pollutant.On the regional and local scales,fine particulate matter (i.e.,aerosols smaller than 2.5μm or PM 2.5)represents a major contributor to air pollution.42Elevated concentrations of PM 2.5cause degradation in visibility,exacer-bate accumulation of pollutants in the planetary boundary layer (PBL),and adversely a ffect human health.43Increasing evi-dence has implicated aerosols not only in aggravation of existing health symptoms but also in the development of serious chronic diseases.44When inhaled,aerosols can amplify the adverse e ffect of gaseous pollutants,such as ozone,45and the smallest particles cause the most severe health impacts 46because they have higher probability than larger particles to deposit in the pulmonary region and penetrate into the bloodstream.47,48Several previous review articles have provided a detailed account of di fferent aspects of new particle formation in the atmosphere,including field measurements of atmospheric aero-sols and nucleation events,49À51coastal new particle formation,52the relation between laboratory,field,and modeling nucleation studies,53,54and the role of di fferent types of nucleation processes in the atmosphere.55Over the past few years,there has been substantial research progress in the area of atmospheric aerosol nucleation,including development of novel detection methods for atmospheric nanoparticles and clusters,as summarized in a recent review by Bzdek and Johnston.56Advances in analytical instruments have led to a number of laboratory and field studies that produced exciting yet often contradictory results regarding the compositions of the critical nucleus and the role of sulfuric acid and other species in the nucleation and growth of nanoparticles.57À61In the present review,we first provide the background information on theoretical and experimental ap-proaches toward investigation of homogeneous vapor nucleationand then introduce recent advances in nucleation and growth of atmospheric nanoparticles.Throughout this review,we strive to present the various nucleation aspects from a fundamental chemical prospective.Since there is a vast body of literature in the area of atmospheric aerosol nucleation,we do not attempt to be inclusive to cover all available publications on this subject.Instead,we choose in this review to focus on the studies that make the most important advances in this field.In section 2,we introduce the nucleation theories and illustrate how the predicted nucleation rates are related with results of laboratory experiments for a number of simple nucle-ating systems.Nucleation of atmospheric aerosols,including ambient measurements,laboratory experiments,and theoretical studies,is described in section 3.Results of laboratory experi-ments and ambient measurements of nanoparticle growth are presented in section 4,and section 5provides the numerical approaches developed to connect measured aerosol nucleation and growth rates.Section 6contains the concluding remarks and describes future research needs.A glossary of acronyms is provided at the end of the review.2.OVERVIEW OF VAPOR NUCLEATION2.1.Nucleation Theories and Computational ApproachesIn the absence of heterogeneities,formation of a new phase occurs through random fluctuations in the vapor density,generating clusters that can grow or decay by gaining or losing a monomer molecule.Growth of the cluster can be represented by a reversible,stepwise kinetic process in a single or multicomponent system:::C s f þA i À1,k þi À1i À1r s k ÀiC Ãs fþA i ,k þi i r s k Ài þ1C i þ1:::ð2:1Þwhere A i À1denotes a monomer species to be added to the clusterC i À1at the (i À1)th step and k i Àand k i +represent the cluster decomposition and association rate constants,respectively.A complete nucleation theory can be established to describe the evolution of the population of clusters,i.e.,the rates and mechanism by which these clusters grow and decay.As re flected by equation 1.1,the free energy of the nucleating system reaches a maximum (i.e.,the nucleation barrier)when the critical nucleus forms.In addition,a multicomponent system may exhibit multiple nucleation barriers,leading to further complication in the identi fication of the critical nucleus on the basis of the free energy surface of the cluster growth.Kinetically,at the critical nucleus,the rate to form the (i +1)th cluster is equal to that of decomposition of the critical nucleus to form the (i À1)th cluster,i.e.k Ài ½C Ãi ¼k þi ½A i ½C Ãið2:2Þwhere [A i ]and [C i ]are the number concentrations of the associating monomer and the cluster of size i ,respectively.Furthermore,since the molecular flux between adjacent clusters achieves the minimum at the critical nucleus (commonly referred to as a bottleneck 7),another practical approach to locate the critical nucleus is to variationally minimize the molecular flux as a function of the cluster site d F i =d i ¼0ð2:3Þwhere F i is the number of clusters growing from a size i to a size i +1per second.The rate of nucleation,J ,is de fined as the rate of growth of the critical nucleusJ ¼k i þ½C i Ãð2:4ÞThe association and decomposition rate constants can be calculated employing the kinetic rate theories,such as transition state theory (TST).62For each cluster,the association rate is related to the dissociation rate by detailed balance 63À70k þi À1k Ài ¼Q C Ãi Q C i À1Q A i À1exp D C ÃikT ð2:5Þwhere Q C i *is the partition function of the critical nucleus,Q C i À1andQ A i À1are the partition functions of the respective (i À1)th cluster and monomer,k is the Boltzmann constant,T is the temperature,and D C i *is the binding energy of the critical nucleus relative to monomer and (i À1)th cluster.The decomposition rate constant of each cluster can be calculated according to the following expression 63À70k Ài ¼kT h Q qC ÃiQ C Ãi exp ÀΔE kT ð2.6Þwhere Q C i *q is the partition function of the transition state,h is the Planck constant,and ΔE is the transition state energy relative to the critical nucleus.In the case that the association reaction proceeds without an activation barrier (a loose transition state),the location of the transition state can be determined variationally by minimizing the decomposition reaction rate constant using canonical variational transition state theory (CVTST).71The partition functions required for eqs 2.5and 2.6can be evaluated by treating the rotational and translational motion classically and treating vibrational modes quan-tum mechanically.Vibrational frequencies,moments of inertia,and reaction energies can be taken from quantum chemical calculations.72An example of such an approach is the dynamical nucleation theory (DNT)of Kathmann et al.,73À75which uses CVTST to locate transition states and calculate evaporation rate constants k i Àfor each stage of the nucleation process.Depending on the assumptions and approximations made,three major types of theoretical approaches have been estab-lished to characterize the nucleation process.Phenomenological theories,e.g.,classical nucleation theory,attempt to obtain the free energy of formation of the critical nucleus from macroscopic parameters,such as the surface tension and the bulk liquid density.Some kinetic theories derive the cluster distribution and hence the nucleation rate by calculating rate constants for association and decomposition of clusters,avoiding explicit evaluation of cluster formation energies from macroscopic parameters.Molecular-scale approaches,including molecular dynamics,Monte Carlo simula-tions,and density functional theory,apply first principles to calculate the cluster structure and free energy of cluster formation.2.1.1.Classical Nucleation Theory.The classical nuclea-tion theory (CNT)was formulated by Becker and D €o ring 76and Frenkel 77on the basis of the kinetic theory of nucleation established by the work of Volmer and Weber 78and Farkas.79CNT includes the thermodynamic and kinetic components by evaluating the free energy change of formation of a nascent phase cluster and calculating the nucleation rate.The phenomenologi-cal approach to CNT describes the nucleation process in terms of the change in Gibbs free energy of the system upon transfer of i molecules from the vapor phase to an i -mer cluster of radius r ΔG ¼ÀikT ln S þ4πr 2σð2.7Þwhere S =p A /p A S is the saturation ratio,p A is the vapor pressure of substance A in the gas phase,p A S is the vapor pressure ofsubstance A over a flat surface of the corresponding liquid,and σis the surface tension.Although the cluster may consist of only a few molecules,it is assumed to have sharp boundaries and the same physical and chemical properties as the bulk phase (capillarity approximation).For a spherical cluster,the number of molecules i can be explicitly related to its radius i =(4/3)πr 3/v l ,where v l is the volume of a single molecule in liquid.Equation 2.7is one of the forms of the Kelvin equation,which expresses the ele-vation in the saturation vapor pressure above a curved surface,such as the interface between a small liquid droplet and surrounding air.The free energy change of the cluster formation given by the right-hand side of eq 2.7consists of two terms.The first term represents the energy decrease upon the transition from vapor to liquid and may be either negative or positive,depending on the vapor saturation ratio.The second term,which is related to the excess of the free energy at the liquid/vapor interface,is always positive.When vapor is subsaturated (S <1),the free energy of cluster formation is always positive and condensation is prohib-ited (Figure 2).If the system is supersaturated (S >1),the free energy term is negative,favoring condensation of vapor mol-ecules and growth of the embryonic droplet.For very small particles,the increase in the free energy due to formation of the new surface area dominates over the free energy decrease from bulk phase formation,resulting in an energy barrier to nucleation.For droplets with size greater than the critical radius r *,the condensation term dominates,leading to a decrease in ΔG as shown in Figure 2.The free energy of cluster formation ΔG reaches a maximum at r *,and the location of the critical nucleus can be determined by di fferentiation of eq 2.7with respect to r r ü2σv l kT ln Sð2.8ÞThe corresponding number of molecules i *at the critical size and free energy barrier height ΔG *are given in the following relations i ü32πσ3v 2l 3ðkT ln S Þ3ð2.9ÞΔG ü4π3σr Ã2¼16π3σ3v 2l ðkT ln S Þ2ð2.10ÞThe critical nucleus at the top of the ΔG curve is in a metastableequilibrium with the vapor.If a single molecule is removed from the critical nucleus,the free energy decreases and the cluster decomposes.If a molecule is added to the critical nucleus,the freeenergy also decreases and the cluster continues to grow sponta-neously.The nucleation rate J can be de fined as the number of clusters that grow past the critical size per unit volume per unit timeJ ¼J 0exp ÀΔG ÃkTð2.11Þwhere J 0is the pre-exponential factor typically determined from gas Àkinetic considerations.The nucleation rate has a negative exponential dependence on the height of the free energy barrier.An increasing saturation ratio decreases the critical nucleus size and the height of the free energy barrier,resulting in a faster nucleation rate (eqs 2.10and 2.11).Classical nucleation theory can be applied to nucleation of multicomponent vapors.When several molecular species parti-cipate in nucleation,the chemical composition of the critical nucleus,which is usually di fferent from the vapor composition,becomes an additional degree of T of binary homogeneous nucleation is first introduced by Flood 80and further developed by Reiss.81The free energy change,ΔG*(i 1,i 2),associated with formation of a critical nucleus from binary vapor depends on the concentrations of molecules of both components,i 1and i 2.The critical nucleus is located at the saddlepoint on the ΔG*(i 1,i 2)surface and corresponds to the smallest cluster for which growth by addition of another mole-cule of vapor of either component is a spontaneous process.An alternative kinetic formulation of the classical nucleation theory can be obtained for cluster formation and dissociation corresponding to reaction 2.1d ½C i d t¼k þi À1½C i À1 ½A i À1 Àk Ài ½C i Àk þi ½C i ½A i þk Ài þ1½C i þ1ð2:12ÞIn the steady state,the concentrations of clusters of di fferent sizes are independent of time and the net rate,at which clusters C i become C i +1,is constant for all i .This simpli fication reduces the problem of calculating the nucleation rate to the derivation of the association and decomposition rate constants.82Whereas the association rate constant k i +can be calculated from first princi-ples,usually assuming that it is the gas Àkinetic collision rate,the decomposition rate k i Àrequires evaluation of the cluster stability,typically from the free energy change of cluster formation,based on the properties of bulk solutions.83For this reason,not only the resulting nucleation rate derived by the kinetic approach takes a general form given by eq 2.11but also it is exactly equivalent to the nucleation rate obtained within the framework of the phenomenological approach.The advantage of CNT lies in its simplicity.The CNT approach provides closed analytical expressions for the critical saturation and nucleation rate based on the free energy of critical nucleus formation derived from measurable bulk properties,readily available for many substances.Although CNT allows estimation of critical supersaturations reasonably well,it fails frequently,by many orders of magnitude,in reproducing mea-sured nucleation rates for a broad range of substances and experimental conditions.Speci fically,the nucleation rates are underestimated at low temperatures and overestimated at high temperatures,84and critical supersaturations are signi ficantly underestimated for strongly associated vapors,such as organic carboxylic acids.85One of the majorreasons for the poorFigure 2.Gibbs free energy change for formation of a droplet of radius rfrom unsaturated (S <1)and supersaturated (S >1)vapor;ΔG *corresponds to a critical nucleus of radius r *.。
Competing structural and magnetic effects in small iron clustersG.Rollmann,P.Entel *,S.SahooInstitute of Physics,University of Duisburg-Essen,Duisburg Campus,47048Duisburg,GermanyReceived 24April 2004;accepted 29September 2004AbstractWe present new results of ab initio total-energy calculations of small iron clusters,Fe n with 26n 615,in which structural Jahn-Teller like distortion and competing non-collinear and collinear magnetic moments have been taken care of simultaneously.We used the density-functional method that employs pseudopotentials and the projector augmented wave method.The full relaxation of the atoms without imposing any symmetry constraints leads to unsymmetrical arrangements of the atoms (distorted clusters)and restores collinearity of the magnetic moments of all clusters considered so far.For n 67our results agree in part with previous ab initio calculations.Ó2005Elsevier B.V.All rights reserved.PACS:36.40.Cg;61.46.+w;71.15.MbKeywords:Magnetism of iron clusters;First-principles calculations1.IntroductionThe physics of magnetic transition-metal (TM)clus-ters is still an intriguing and challenging topic both from an experimental and a theoretical point of view.Although certain properties of the clusters can be explored directly,like the bond lengths of the atoms from extended X-ray absorption fine structure measure-ments [1],the vibrational frequencies of free clusters from resonance Raman spectroscopy [2],the depen-dence of the magnetic moments of the free clusters on size and temperature using a Stern–Gerlach magnet and time-of-flight mass spectrometer [3]or the orbital and spin magnetic moments of supported clusters from X-ray magnetic circular dichroism technique [4,5],a sys-tematic and accurate investigation of the structural,elec-tronic and magnetic properties of small TM clusters isstill not feasible.With respect to theory the development of computational techniques relying on first-principles methods as well as the increase in computer capacity have allowed to study TM clusters containing up to a few hundred atoms—yet some fundamental problems are still there like the observation that different methods yield different results for the spin multiplicity and the magnetic moments of the clusters (see also the discus-sions in [6–9])or like the competition of non-collinear versus collinear magnetism depending on the morphol-ogy of the clusters [10,11],on the Jahn–Teller distortions [12]and on the multi-twinned structures usually ob-served for the larger clusters [13].For an overview of computational calculations on an ab initio basis inclu-ding tight-binding calculations and a discussion of some of the problems addressed above we refer to [14].There are some further interesting works which we would like to mention.A recent implementation of the density functional based self-consistent charge tight-binding method allowing to address larger TM clusters is discussed in [15].Different aspects of magnetism of0927-0256/$-see front matter Ó2005Elsevier B.V.All rights reserved.doi:10.1016/matsci.2004.09.059*Corresponding author.Tel.:+492033793330;fax:+492033793665.E-mail address:entel@thp.uni-duisburg.de (P.Entel)./locate/commatsciComputational Materials Science 35(2006)275–278small clusters have also been discussed on the basis of the Hubbard model allowing to deal with correlation ef-fects[16–18]or on the basis of the Heisenberg model showing novel quantum effects for the case of antiferro-magnetic exchange[19].Wefinally notice that the mag-netic moments of TM clusters,which for the free clusters are usually larger than corresponding bulk values,can significantly change for the case that the clusters are supported[20,21]or embedded[22,23].In the present contribution we present results of total energy calculations in the framework of density func-tional theory allowing for full relaxation of the atoms in free clusters without any symmetry constraints.In contrast to most results reported in the literature we ob-serve that for the case of iron clusters all geometries found correspond to distorted clusters even for the case of high-symmetry forms like the13-atom icosahedron, and that the degree of distortion influences the magni-tude of the magnetic moments.putational detailsFor each iron atom a number of eight valence elec-trons was taken into account,the remaining core elec-trons together with the nuclei were described by pseudopotentials following the projector augmented wave method as implemented in the Vienna ab initio simulation package[24].For the exchange correlation functional we chose a form proposed by Perdew and Wang[25].For all clusters considered the energy cutofffor the electronic wavefunctions was keptfixed at a value of335eV throughout the calculations.For the supercell we have chosen a cube of size123A˚3which is large enough to ensure that the interaction of clusters with their images is negligible.Integration over the Brill-ouin zone was done for the C-point only.Besides atomic relaxation we also allowed for a fully non-collinear mag-netization density as described in[11].The ground state geometries of the iron clusters con-taining up to15atoms as obtained from our calculations are depicted in Fig.1.The clusters do not possess the highest possible symmetry but are distorted to some degree.For the small Fe n clusters(n66),the ground state structures are in agreement with the corresponding results reported in[8,9],whereas for Fe7wefind the pentagonal bipyramid as in[12].Comparison of results for the larger clusters is difficult because no similar calculations based on the generalized gradient approxi-mation(GGA)exist.An exception to this is Fe13,whose potential energy surface has been studied extensively before by Boba-dova-Parvanova et al.[28].In close agreement to their results we obtain a distorted icosahedron with a collin-ear,ferromagnetic alignment of the spins and a total magnetic moment of44l B as the isomer with the lowest total energy.An antiferromagnetic-like state with the moment of the central atom reversed and a total mo-ment of34l B is located37.8meV per atom higher. These relationships are shown in Fig.2.Fig.3shows results of geometry optimization for the Fe5cluster in the GGA starting from different initial geometries without imposing any symmetry constraints. We have also allowed for non-collinear arrangementsof Fig.1.Ground state geometries of iron clusters containing between2and15atoms as obtained from our GGA calculations.All structures exhibit some degree of distortion from the regular shape.276G.Rollmann et al./Computational Materials Science35(2006)275–278the magnetic moments.The ground state of the trigonal-bipyramidal (D 3h symmetry)cluster is characterized by a non-collinear magnetization density originating from a tilt in the moments of the apical atoms in opposite direc-tions and corresponds to the state already found earlier [11,10].By employing the local density approximation (LDA),Oda et al.and Hobbs et al.obtain a total magnetic moment of 14.5l B ,whereas it is calculated to 15.9l B when gradient corrections are included [[11],present study].The angle by which the moments of the apical atoms are tilted varies from 30°to 36°in the LDA calculations and is calculated to 31°by using GGA.The energetic relationships schematically shown in Fig.3reveal that the effect of the Jahn–Teller distor-tion on the magnetic moments is to restore collinearity.For all other clusters considered so far we have made the same observation,the ground state corresponding toaFig.2.The collinear,ferromagnetic ground state of the Fe 13cluster with distorted icosahedral shape (M =44l B )(a)is by 37.8meV lower in energy than the antiferromagnetic solution (M =34l B )(b).Fig.3.Schematic sketch of the energetic and magnetic relationships between local minima on the potential energy surface of the Fe 5cluster.The distorted trigonal bipyramid with restored collinear spin moments corresponds to the ground state geometry of Fe 5.Magnetic moments are represented by arrows,their values are given by thenumbers.parison of the magnetic moments obtained in the present calculation (black circles)with available data from other ab initio calculations (blue:LDA [6,10,15,26],magenta:GGA [11,21,27]).See text for discussion.G.Rollmann et al./Computational Materials Science 35(2006)275–278277collinear ferromagnetic arrangement of the spin moments.Fig.4shows the magnetic moments of the present GGA calculations together with results of former calcu-lations using either the local density approximation (LDA)[6,10,15,26]or the GGA[11,21,27].3.ConclusionsThe results of ab initio calculations of TM clusters found in the literature are not consistent and seem to depend strongly on the details of the simulation method. We have shown that in order to obtain reliable values for the magnetic moments of the clusters,it is important to take into account relaxation of the atoms.We found that the ground state geometries of small iron clusters are distorted with collinear ferromagnetic arrangement of the magnetic moments.A systematic extension of the present calculations to include larger cluster sizes is needed.A few calculations for larger Fe n clusters with bcc(Fe35,Fe35)and fcc structure(Fe38,Fe43,Fe55, Fe62)show that in this case a larger inward relaxation of the outer shells takes place in all cases,accompanied by an increase of local magnetic moments beyond3l B [29].A systematic search for additional distortion of these clusters has yet to be undertaken.References[1]H.Purdum,P.A.Montano,G.K.Shenoy,T.Morrison,Phys.Rev.B25(1982)4412.[2]T.L.Haslett,K.A.Bosnick,S.Fedrigo,M.Moskovits,J.Chem.Phys.111(1999)6456.[3]I.M.L.Billas,J.A.Becker,A.Chaˆtelain,W.A.de Heer,Phys.Rev.Lett.71(1993)4067.[4]u,A.Fro¨hlisch,R.Nietubyc,M.Reif,W.Wirth,Phys.Rev.Lett.89(2002)057201.[5]P.Gambardella,S.Rusponi,M.Veronese,S.S.Dhesi, C.Grazioli,A.Dallmeyer,I.Cabria,R.Zeller,P.H.Dederichs,K.Kern,C.Carbone,H.Brune,Science300(2003)1130.[6]O.Die´guez,M.M.G.Alemany,C.Rey,P.Ordejo´n,L.J.Gallego,Phys.Rev.B63(2001)205407.[7]G.L.Gutsev,Phys.Rev.B65(2002)132417.[8]S.Chre´tien,D.R.Salahub,Phys.Rev.B66(2002)155425.[9]G.L.Gutsev,C.W.Bauschlicher Jr.,J.Phys.Chem.A107(2003)7013.[10]T.Oda,A.Pasquarello,R.Car,Phys.Rev.Lett.80(1998)3622.[11]D.Hobbs,G.Kresse,J.Hafner,Phys.Rev.B62(2000)11556.[12]M.Castro,Int.J.Quant.Chem.64(1997)223.[13]B.Rellinghaus,O.Dmitrieva,S.Stappert,J.Cryst.Growth262(2004)612.[14]J.A.Alonso,Chem.Rev.100(2000)637.[15]P.Bobadova-Parvanova,K.A.Jackson,S.Srinivas,M.Horoi,C.Ko¨hler,G.Seifert,J.Chem.Phys.116(2002)3576.[16]F.Lo´pez-Urias,G.M.Pastor,Eur.Phys.J.D9(1999)495.[17]M.A.Ojeda,J.Dorantes-Da´vila,G.M.Pastor,Phys.Rev.B60(1999)6121.[18]F.Lo´pez-Urias,G.M.Pastor,K.H.Bennemann,J.Appl.Phys.87(2000)4909.[19]J.B.Parkinson,J.Timonen,J.Phys.:Condens.Matter12(2000)8669.[20]S.Pick,V.S.Stepanyuk,A.N.Baranov,W.Hergert,P.Bruno,Phys.Rev.B68(2003)104410.[21]Zˇ.Sˇljivancˇanin, A.Pasquarello,Phys.Rev.Lett.90(2003)247202.[22]R.Robles,R.C.Longo,A.Vega,C.Rey,V.Stepanyuk,L.J.Gallego,Phys.Rev.B66(2002)064410.[23]Y.Xie,J.A.Blackman,Phys.Rev.B66(2002)085410.[24]G.Kresse,J.Furthmu¨ller,Phys.Rev.B54(1996)11169.[25]J.P.Perdew,Y.Wang,Phys.Rev.B45(1992)13244.[26]P.Ballone,R.O.Jones,Chem.Phys.Lett.233(1995)632.[27]M.Castro,C.Jamorski,D.R.Salahub,Chem.Phys.Lett.271(1997)133.[28]P.Bobadova-Parvanova,K.A.Jackson,S.Srinivas,M.Horoi,Phys.Rev.B66(2002)195402.[29]A.V.Postnikov,P.Entel,J.M.Soler,Eur.Phys.J.D25(2003)261.278G.Rollmann et al./Computational Materials Science35(2006)275–278。
Simplifying Software Integration and Safety Certification for Medical DevicesScott L. LinkeJune25, 2019Safety –Finding HazardsStart with the identification of safety hazards in the system Example of system level safety hazard:Device does not perform the prescribed action A within time T after receiving the commandThis hazard must be addressed by all the implicated components in the system. As an example, any of the following conditions could lead to the materialization of this hazard:▪The hardware’s power unit malfunctions after receiving the command ▪A logical error could occur in action A▪The operating system does not respond in time within time T afterreceiving the command▪Another action B could interfere with the proper execution of action ASafety –Defining RequirementsIn order to mitigate the risks resulting from this hazard, safety requirements are definedUsing the example:Device does not perform the prescribed action A within time T after receiving the commandRisk: The hardware malfunctions after receiving the commandSafety Requirement: The hardware’s power unit must have failure probability lower than <threshold> Risk: The operating system does not respond in time within time T after receiving the command Safety Requirement: The operating system must have an upper bound for the response time less than T Risk: A logical error could occur in action ASafety Requirement: The design of action A must be free from logical errorsRisk: Another action B could interfere with the proper execution of action ASafety Requirement: Action A must be free from interference from another action in the systemSafety –RTOS RequirementsZooming in on one of the safety requirements we defined for the RTOS:Action A must be free from interference from another action in the systemThis safety requirement actually translates into multiple requirements for the OS, including:Safety –Selecting Off The Shelf Components With the increasing complexityof today’s medical devices, theuse of OTS (off-the-shelf)components is a necessitySafety PedigreeWhen choosing an OTScomponent, it is important tounderstand its safety pedigreeQNX Functional Safety (FuSa) ProductsQNX OS for Safety (QOS)▪Certified version of SDP 7.0 to ISO 26262 ASIL-D and IEC 61508 SIL3▪Version 2.1 to be released in August 2019QNX OS for Medical (QOSM)▪Certified version of SDP 7.0 to IEC 62304 Class C▪Available February 2019QNX Hypervisor for Safety (QHS)▪First QNX certified Hypervisor, to ISO 26262 ASIL-D and IEC 61508 SIL▪To be released in November 2019. Access and runtime will include QOS 2.1Black Channel(controlled access)▪Point-to-point safe communication,to be certified to ISO 26262 ASIL-Dand released in January 2020QNX Platform for Instrument Clusters (QPIC)▪Instrument Cluster reference platform,with ISO 26262 ASIL-B Certified Graphics Monitor(Apollo Lake) for tell-tale monitoring▪Released as 1.0 in 2018SAFERTOS▪Strategic Partnership and product integration with WITTENSTEIN,for MCU devicesQNX Functional SafetyManagementWhat is Functional Safety?Functional Safety (FuSa) is a QNX pedigree !▪From the standard: “Functional safety is the part of the overall safety of a systemor piece of equipment that depends on automatic protection operating correctlyin response to its inputs or failure in a predictable manner.”At BlackBerry QNX, we adhere toa wide spectrum of FuSa standards as part of the product development lifecycleIt is in our DNA to follow processes and set safety goals for our products▪We have a long history of proven safety critical product and services delivery that customers can count on.IEC62304MedicalIEC61508IndustrialISO26262AutomotiveEN50128*Railway IEC61513*NuclearPrescriptive to Goal basedT e c h n i q u e t o P r o c e s s o r i e n t e dDo X and Y , don’t do Z Design a safe systemUse T echnique XFollow your processes* Available through Service EngagementQNX Safe Kernel 1.0QOS 1.0SDP 6.5x compatibleMicrokernel and C LibraryC toolchainQOS 2.0SDP 7.0 compatibleMicrokernel and C LibraryC toolchainC++ toolchain64-bit (A RM & x86)QOS 2.1 / QHS 2.0SDP 7.0 compatibleMicrokernel and CLibraryC/C++ toolchain64-bit (ARM & x86)Math LibrarySMMUMA N supportQVMQOS / QHS nextSDP 7.1 compatibleMicrokernel, QVM and CLibraryC/C++ toolchain64-bit (ARM & x86)Math LibrarySMMUMAN supportC++ LibraryBlack ChannelSafety TrainingSafety AuditSafety TrainingSafety AuditBSP StartupSafety TrainingSafety AuditBSP StartupBSP ComponentsIEC 61508IEC 61508ISO 26262IEC 61508ISO 26262IEC 6230420102015201720192020IEC 61508ISO 26262IEC 62304…FuSa at QNX –Ever Increasing ScopeQNX FuSa Value Proposition▪Best in class support for Functional Safety (FuSa), mixed-criticality and virtualization ▪Products certified to ISO 26262 ASIL-D (Automotive), IEC 61508 SIL3 (Industrial), IEC 62304 Class C (Medical)▪Applicable to other markets and standards such as EN 50128 (Railway), IEC 61513 (Nuclear)▪FuSa products assessed by certification body (TUV Rheinland), undergo fault-injection tests and other stringent validation methods▪Products are subjected to continuous safety impact analysis▪Simplified integration to FuSa items delivered as ISO 26262 SEooC to reduce cost ▪Expanding product certification scope and engineering services improves stickinessSafety Case (Historical)T emporal SeparationThe QOS Adaptive Partitioning System (APS) supports CPU time partitions to limit CPU usage from misbehaved or rogueapplications and/or services to starve safety critical applications.Spatial SeparationThe QOS microkernel architecture separates critical OS components into their own protected memory partitions, unlike a monolithic OS that places them all together. Reduces attack surface.Safety Case (Additions)Virtualization (QHS 2.0) Bus Master Caging (QOS 2.1)QOS and QNX integrate SMMU support, and allow bounding of memory accesses by bus-mastering device, preventing unintentional or malicious access to safety critical memory.QHS allows OSes to run inside a VM container. It provides freedom from interference between guests, between host and guest, the ability to virtualize safety critical devices and implement a Local Design Safe State (DSS).FuSa Expansion Strategy1.Improve safety artifacts, deliveruseful recommendations andsafety concepts to customers 2.Expand integrations of 3Psafety stacks/services3.Grow BSP certificationcapabilities4.Acknowledge self-test librariesand Silicon IP as part of SafetyBSPs5.Embrace heterogenouscomputingSafety Item (ASIL-B to D)MiddlewareOS/HypervisorBSPApplicationsHWSafetyMonitor(ASIL-D) IntegrationStickyness12345Software Qualification (New)Retrospectively Certified to ASIL-D Problem:•Old SOUPimplementation Solution:•Mathematical validation of calculation accuracy LibC++ -Labor and Automation (Future)Libm–Innovative (QOS 2.1)Standard C++ Librarycertified to ASIL-BProblem:•1000 page spec•4500 functions•Large gapin testing coverageSolution:•Several engineers andtoolsComm HeaderBlack Channel Communication Technology (New)▪GA release in January 2020▪Safety features, up to ASIL-D, to protect data passed point to point using communication software and hardware NOT safety certified (i.e. Ethernet, UDP , DDS, QSPI, etc)▪“Safety bag” that allows for integritychecking, authentication, detection of data loss and other measures (defined in IEC 61784-3 and AUTOSAR)outside of traditional communication hardware and software.▪Cost reduction for customers to certify communication components for their system safety case.Black ChannelSenderUnsafe communicationBlack ChannelReceiverPayloadPayloadPayloadBCCT HeaderBCCT HeaderQ&A©2019 BlackBerry Limited. Trademarks, including but not limited to BLACKBERRY, BBM, BES, EMBLEM Design, ATHOC and SECUSMART a re the trademarks or registered trademarks of BlackBerry Limited, its subsidiaries and/or affiliates, used under license, and the exclusive rights to such trademarks are expressly reserved. All other trademarks are the property of their respective owners. iPad and iPhone are trademarks of Apple, Inc., registered in the U.S. and other countries. Android is a trademark of Google Inc. The Android robot is reproduced or modified from work created and shared by Google and used according to terms described in the Creative Commons 3.0 Attribution License.。
第21卷第3期2002年5月 无锡轻工大学学报Journal of Wuxi U niversity of Light Industry Vol.21 No.3May. 2002 文章编号:1009-038X (2002)03-0249-05 收稿日期:2001-12-28; 修订日期:2002-03-12.作者简介:杨海龙(1969-),男,浙江永嘉人,发酵工程博士研究生.灵芝酸的分子结构与生物活性的关系杨海龙, 吴天祥, 章克昌(江南大学生物工程学院,江苏无锡214036)摘 要:用量子化学半经验方法(AM1)计算了从发酵生产的灵芝菌丝体中纯化得到的灵芝酸组分M1和M2的分子轨道和电子结构,结果表明:M1和M2的分子轨道组成及电子结构较为相似,但在前线轨道上存在差异(M1的L UMO 能量较低),它们的生物活性相近但又有差别,与灵芝酸M1和M2抑菌试验的结果相符.此外,从理论上探讨了灵芝酸分子结构与生物活性间的关系.关键词:灵芝酸;分子结构;生物活性中图分类号:O 561.1文献标识码:AThe R elationship Bet w een Molecular Structure andActivity of G anoderma AcidYAN G Hai 2long , WU Tian 2xiang , ZHAN G Ke 2chang(School of Biotechnology ,S outhern Y angtze University ,Wuxi 214036,China )Abstract :The molecular orbitals and electron structure of ganoderma acid M1and M2,purified from fermented mycelia ,were calculated by semi 2empirical method (AM1).The results showed that the ganoderma acid M1and M2were similar in the structure of orbitals and charges ,but different in theirfrontier orbitals (the energy of L UMO in M1was lower ).It was indicated that they were similar in bio 2activities ,agreed with the result of their anti 2microbial tests.The relationship between electron structure and bio 2activity is discussed in this paper.K ey w ords :G anoderma acids ;molecular structure ;bio 2activity 灵芝(Ganoderm a l uci dum )是中国的传统名贵中药,现代药理研究表明:灵芝具有抗衰老、提高机体免疫功能、保肝护肝、抑制肿瘤等功效[1].灵芝酸是灵芝的一类,具有抗HIV 21型病毒等多种生物活性的三萜类化合物[2、3].作者通过液体深层发酵,从灵芝的发酵菌丝体中分离、纯化出了灵芝酸组分M1和M2,定性测定了其分子结构并研究了其生物活性[4、5].为进一步揭示灵芝酸结构与生物活性间的关系,采用量子化学计算程序研究了灵芝酸M1和M2的电子结构及分子轨道构成.1 计算方法灵芝酸M1和M2的分子结构及原子序号见图1、图2.以CambridgeSoft 公司的组合软件Chemof 2fice2001搭建灵芝酸M1和M2的分子结构,以分子力学MM2模块搜寻能量最低结构(参数为MM2力场原有参数,RMS 为0.1),再以MOPAC/AM1计算它们的电荷结构和分子轨道组成(RHF 2SCF 方法),所有计算均在PC 机上进行.图1 灵芝酸M1的结构Fig.1 The structure of ganoderma acidM1图2 灵芝酸M2的结构Fig.2 The structure of ganoderma acid M252 无 锡 轻 工 大 学 学 报 第21卷2 结果与讨论2.1 灵芝酸M1和M2的分子轨道组成表1列出了两个分子的前线轨道及其临近的10个分子轨道,可见灵芝酸M1和M2的分子轨道结构相近,M1与M2的L UMO +1至L UMO +4分子轨道、M1的HOMO -1至HOMO -5分子轨道、M2的HOMO -1至HOMO -8分子轨道能级差较小(<1.0eV ),这说明这些分子轨道有群电子作用.M1的HOMO -1至L UMO +2能级值比M2的低,在前线分子轨道方面,M1(L UMO 为-0.25442eV ,HOMO 为-9.22386eV )比M2(L U 2MO 为0.27683eV ,HOMO 为-8.83440eV )的要低.两个分子的分子轨道组成相近,但前线轨道的能级又存在一定的差异,这预示着灵芝酸M1和M2的生物活性可能相似但又有差别.灵芝酸M1和M2分子的HOMO 与L UMO 分别见图3、图4.由图中可见,灵芝酸M1和M2分子骨架上双键及C (9)所连基团(M1为2H 和2OH ,M2为2H )的不同对两个分子前线轨道的差异影响较大,而C (19)所连基团(M1为两个2H ,M2为2H 和2OAc )的不同对它们前线轨道的差异影响较小.2.2 灵芝酸M1和M2的电荷结构表2列出了两个分子中各原子上的电荷数值,可见M1和M2的电荷结构大体相近,但也有相异之处(第9号C 原子M1为0.03646,M2为-0.20760;19号C 原子M1为-0.25252,M2为0.01472;另外M2的54、71、86原子分别为C 、C 、O 原子,M1的为H 原子),在第9号C 原子上M1连接的是OH ,M2连接的是H ;在第19号C 原子上M1连接的是2个H ,M2连接的是一个H 一个OAc.两个分子外围的氢原子全都呈正电荷,而骨架原子大多呈电负性,在M1的41个骨架原子中只有C (3)、C (9)、C (17)、C (23)、C (29)和C (37)原子为正电荷,在M2的44个骨架原子中只有C (3)、C (17)、C (19)、C (23)、C (29)、C (37)和C (54)原子为正电荷.灵芝酸M1和M2分子结构上的差异(第9、19号C 原子所连基团的不同)在各自的电荷结构上得到了充分的反映.表1 灵芝酸M1和M2的分子轨道能量T ab.1 The molecular orbital energy of ganoderma acid M1and M2M1分子轨道能量/eV轨道能量/eVM2分子轨道能量/eV轨道能量/eVLUMO +10 2.99380HOMO -9.22386LUMO +10 2.31323HOMO -8.83440LUMO +9 2.98389HOMO -1-9.94584LUMO +9 2.01162HOMO -1-10.02450LUMO +8 2.83247HOMO -2-10.35057LUMO +8 1.96696HOMO -2-10.04725LUMO +7 2.30613HOMO -3-10.36646LUMO +7 1.89913HOMO -3-10.09872LUMO +6 1.99844HOMO -4-10.69309LUMO +6 1.87535HOMO -4-10.31011LUMO +5 1.97377HOMO -5-10.89528LUMO +5 1.80934HOMO -5-10.43517LUMO +4 1.67946HOMO -6-10.96492LUMO +4 1.26545HOMO -6-10.64301LUMO +3 1.40049HOMO -7-11.08284LUMO +3 1.25281HOMO -7-10.72536LUMO +2 1.09898HOMO -8-11.15870LUMO +2 1.19753HOMO -8-10.84169LUMO +10.62296HOMO -9-11.22479LUMO +10.68782HOMO -9-11.11680LUMO-0.25442HOMO -10-11.29269LUMO0.27683HOMO -10-11.23553表2 灵芝酸M1和M2的原子电荷T ab.2 Atom electron of ganoderma acid M1and M2M1分子原子序号电荷原子序号电荷M2分子原子序号电荷原子序号电荷C (1)-0.24152H (71)0.16549C (1)-0.24131H (45)0.16397C (2)-0.27470H (72)0.15315C (2)-0.29132H (74)0.13970C (3)+0.02148H (73)0.14443C (3)+0.01660H (70)0.19803C (4)-0.07047H (53)0.13693C (4)-0.07984H (72)0.13966C (5)-0.12647H (54)0.13917C (5)-0.13289H (73)0.15059152第3期杨海龙等:灵芝酸的分子结构与生物活性的关系续表2M1分子原子序号电荷原子序号电荷M2分子原子序号电荷原子序号电荷C(6)-0.01891H(55)0.13133C(6)-0.01751H(53)0.18507C(7)-0.09818H(56)0.12799C(7)-0.07479H(55)0.14065C(8)-0.12284H(60)0.13684C(8)-0.06598H(56)0.14336C(9)+0.03646H(61)0.15396C(9)-0.20760H(60)0.14637C(10)-0.29412H(62)0.12658C(10)-0.22165H(61)0.14047C(11)-0.21601H(63)0.15670C(11)-0.21806H(62)0.15384C(12)-0.23655H(81)0.14487C(12)-0.21095H(63)0.17361C(13)-0.05643H(85)0.13623C(13)-0.04884H(81)0.16372C(14)-0.01062H(86)0.13501C(14)-0.03653H(85)0.17270C(15)-0.14091H(87)0.15130C(15)-0.14377H(87)0.17546C(16)-0.28272H(88)0.15031C(16)-0.26774H(88)0.16443C(17)+0.01195H(89)0.21912C(17)+0.02132H(89)0.23624C(18)-0.15195H(90)0.14105C(18)-0.16626H(90)0.14166C(19)-0.25252H(91)0.13621C(19)+0.01472H(91)0.15150C(20)-0.24873H(92)0.13206C(20)-0.27194H(92)0.12356C(21)-0.12101H(82)0.12048C(21)-0.14333H(82)0.12715C(22)-0.23524H(83)0.11054C(22)-0.16421H(83)0.11171C(23)+0.38363H(84)0.13738C(23)+0.38599H(84)0.14406C(24)-0.32011H(57)0.13425C(24)-0.30358H(57)0.13894C(25)-0.34004H(58)0.11087C(25)-0.34192H(58)0.11026C(26)-0.33492H(59)0.14978C(26)-0.34498H(59)0.15186C(27)-0.34082H(50)0.13418C(27)-0.33305H(50)0.13224O(28)-0.31530H(51)0.12219O(28)-0.32735H(51)0.12016C(29)+0.15315H(52)0.11890C(29)+0.35581H(52)0.12931C(30)-0.17560H(42)0.13427C(30)-0.36600H(42)0.16552O(31)-0.32322H(43)0.13535O(31)-0.39071H(43)0.16695C(32)-0.32884H(44)0.14601C(32)-0.33436H(44)0.16604C(33)-0.34249H(78)0.11672C(33)-0.34010H(78)0.12056O(34)-0.38916H(79)0.13092O(34)-0.32219H(79)0.11537C(35)-0.33909H(80)0.12950C(35)-0.34034H(80)0.14976O(36)-0.29762H(75)0.12422O(36)-0.30604H(75)0.11843C(37)+0.34782H(76)0.12322C(37)+0.14588H(76)0.11984C(38)-0.40461H(77)0.13304C(38)-0.17700H(77)0.13219O(39)-0.34907H(70)0.26363O(39)-0.31823H(67)0.12337O(40)-0.33622H(67)0.11867O(40)-0.39979H(68)0.12543O(41)-0.34544H(68)0.12719O(41)-0.37487H(69)0.13895H(48)+0.13443H(69)0.13524C(54)+0.15309H(64)0.14459H(49)+0.14282H(64)0.17532C(71)-0.17838H(65)0.13816H(46)+0.15006H(65)0.15118O(86)-0.31921H(66)0.13588H(47)+0.14554H(66)0.17383H(48)+0.13428H(93)0.28322H(45)+0.16950H(93)0.26488H(49)+0.13197H(94)0.13539H(74)+0.14514H(46)+0.18220H(95)0.13998H(47)+0.13978H(96)0.15113 252 无 锡 轻 工 大 学 学 报 第21卷M1M2图3 灵芝酸M1和M2的H OMO 表面Fig.3 The H OMO surface of ganoderma M1andM2M1M2图4 灵芝酸M1和M2的L UMO 表面Fig.4 The L UMO surface of ganoderma M1and M23 结 论化合物的生物活性是由其分子结构决定的,化合物与生物受体相互作用(立体相互作用、轨道相互作用、电性相互作用等)才能显现其活性.随着计算机科学的发展,量子化学计算能方便地计算出化合物分子的结构组成、理化性质及其反应活性等,已成为化学及生物科学相关领域工作者研究化合物性质的辅助工具.灵芝酸M1和M2都为四环三萜酸类化合物,量子化学半经验方法AM1的计算结果反映了它们结构上的差异,即C (9)及C (19)所连基团不同.它们的分子轨道组成及电荷结构方面具有许多相似之处,推测它们可能有相近的生物活性;在前线轨道方面,M1的L UMO 为-0.25442eV ,M2的L UMO 为0.27683eV ,M1的HOMO 为-9.22386eV ,M2的HOMO 为-8.83440eV ,这又预示着它们的差异.抑菌实验表明,它们均能抑制大肠杆菌、产气杆菌、金黄色葡萄球菌及肠炎杆菌的生长,但灵芝酸M1的抑菌能力较M2为强[4、5].根据前线轨道理论,一个分子的最高占有轨道(HOMO )和最低空轨道(L UMO )是决定其性质和活性的关键,灵芝酸M1的L UMO 能量较低,接受外来电子的能力强,从而具有较强的反应活性,AM1的计算较好地解释了实验结果.从两个分子的前线轨道看,灵芝酸M1和M2前线轨道的差异主要是由于分子骨架上双键及C (9)上所连基团的不同,为此,作者认为它们间生物活性的差异亦是由骨架上双键及C (9)上所连基团的不同引起的,而C (19)上所连基团的不同对活性的差异影响较小.参考文献:[1]赵东旭,杨新林,王帮武,等.灵芝研究的若干进展[J ].食用菌学报,1999,6(3):69-64.[2]MEKK AW Y S ,MESEL HY M R ,NA K AMURA N ,et al .Anti -HIV -1protease substances from Ganoderm a lucidum [J ].Phytochem ,1998,49(6):1651-1657.[3]MIN B S ,NA K AMURA N ,MIY ASHIRO H ,et al .Triterpenes form the s pores of Ganoderm a lucidum and their inhibigoryactivity against HiV -1protease[J ].Chem Pharm Bull ,1998,46(10):1607-1612.[4]李平作.灵芝深层发酵生产生物活性物质的研究[D ].无锡:无锡轻工大学,1997.[5]李平作,章克昌.灵芝发酵菌丝体中灵芝酸的分离纯化及生物活性检测[J ].天然产物研究与开发,1999,11(4):67-70.(责任编辑:杨萌,朱明)352第3期杨海龙等:灵芝酸的分子结构与生物活性的关系。
a r X i v :p h y s i c s /0503092v 1 [p h y s i c s .a t m -c l u s ] 11 M a r 2005Electronic structure of clusters (LiBC)n :n =1,2and 4G.M.Lombardo,a A.Grassi,a G.Forte,a G.G.N.Angilella,bR.Pucci,b and N.H.March c ,da Dipartimentodi Scienze Chimiche,Facolt`a di Farmacia,Universit`a di Catania,Viale A.Doria,6,I-95126Catania,Italyb Dipartimentodi Fisica e Astronomia,Universit`a di Catania,andIstituto Nazionale per la Fisica della Materia,UdR Catania,Via S.Sofia,64,I-95123Catania,Italyc Departmentof Physics,University of Antwerp,Groenenborgerlaan 171,B-2020Antwerp,Belgiumd OxfordUniversity,Oxford,UKReceived 2February 2008A crystalline form of hole-doped LiBC has been studied,which has been pre-dicted to be superconducting with a transition temperature T c comparable to that of the isoelectronic compound MgB 2[1,2].The structure of LiBC is closely related to the bilayered structure of MgB 2,with Li replacing Mg,and B 2being replaced by BC,but with hexagonal BC layers alternating so that B is nearest neighbour to C both within the in-plane rings,and along the c axis.Although the number of valence electrons decreases by one in replacing Mgwith Li,this is compensated by the substitution of B2by BC.At variance with its similarities with MgB2,a distinctive feature of LiBC is that the Li content in Li x BC can be varied with respect to its stoichiometric value x=1, without any appreciable change of crystalline structure for a quite wide range in x=0.24−1[1],thus allowing to study the superconducting properties of this material upon self-hole-doping.Both MgB2and LiBC are characterized by a similar electronic structure,with a three-dimensional(3D)σsubband,mainly arising from the B2(respectively, BC)layers,and a quasi-bi-dimensional(quasi-2D)πsubband,mainly arising from the electrons delocalization across the layers.The relevance of the prox-imity of theπsubband to a3D–2D crossover,i.e.an electronic topological transition,for the dependence of T c and of the isotope exponent on doping has been emphasized elsewhere within the two-band model of superconductivity [3].Thus,it would be natural to think of both structural and electronic properties of crystalline LiBC as arising from the underlying structural and electronic properties of the individual LiBC units.This has motivated the present study of the electronic structure of the small clusters(LiBC)n,with n going from 1to4.With increasing cluster size n,the solid crystalline and electronic structure of LiBC can be approached,thus allowing one to recognize the origin of the peculiar bilayered structure of the diborides,and the nature of their two coupled electronic bands.The present study shows that such features are already present in clusters(LiBC)n,with n as small as4.For these clusters the electronic stuctures,optimized geometries,and the vi-brational analysis were obtained using the Gaussian03package[4],with ab initio self-consistentfield Hartree-Fock wavefunctions at the6-311+G(d)level of the theory(including polarization and diffuse functions).Each cluster was studied with various spin multiplicities depending on the number of possible uncoupled valence electrons.Here,we report only those which attained a true minimum.At this level of accuracy of the electronic structure studies,we show in Fig.1 the fully optimized geometrical configuration of LiBC for different spin multi-plicities.Table1records the equilibrium bond lengths for Li–Li,Li–C,Li–B, and B–C,for some of the clusters considered in this study.One of the focal points of the present letter is the HOMO-LUMO energy gap ǫHL of the various clusters considered.Therefore in Fig.2for n=1this gap is recorded for the three spin multiplicities studied.There is not a huge spread of ǫHL for n=1with spin multiplicity,but the smallest gap is when this quantity is∼5.The corresponding total Hartree-Fock energies are given in Tab.2for the three different spin multiplicities.Turning to the case n=2,two geometries are shown in Figs.3a and3b,with the relevant equilibrium bond lengths recorded in Tab.1.The‘trans’configu-ration of Fig.3,with multiplicity3,has the lowest energy at the present level of approximation.The corresponding energy gaps for the two configurations are seen not to be very different,with also a relatively weak dependence on spin multiplicity.The largest cluster studied here corresponds to n=4.Fig.4shows the fully optimized configurations of the four isomer quadruplet(LiBC)4clusters.The top row of this Figure has C2v symmetry,whereas the lower Figure symmetry is C1.Studying stability via the normal mode vibrational frequencies,wefind that some frequencies of the extreme right symmetry cluster in the top row of Fig.4are imaginary,all the other isomers presented here being stable in this context.It is appropriate at this point to briefly discuss the geometry of the(LiBC)4 clusters in relation to the crystalline solid form.The main point to emphasize is that in Fig.4the three configurations for which the vibrational frequencies are all real each contain a six-membered ring,consisting of alternating boron and carbon atoms.However,orthogonal to the ring,each configuration has a Li dimer passing through the centre of the ring.Turning to the solid-state structure,Fig.1of Ref.[1]contains two such BC hexagons again,which are intercalated by Li layers.It should be stressed that adjacent hexagons in the solid have no direct B–B or C–C bonds.One discerns a Li–Li axis passing through the centre of the BC hexagons,establishing thereby close contact with the cluster structures already discussed.From Table1,one indeedfinds that the Li–Li distances range between3.30and3.60˚A,to be compared and contrasted with the interlayer Li–Li distance in solid LiBC,which is of3.529˚A [1].Another analogy with the solid phase is provided by the electronic charge distribution in the largest clusters examined in this study.Fig.5therefore shows the Mulliken density charge isosurfaces of the valence electrons,for the (LiBC)4cluster with C1symmetry(Fig.4).One may detect the formation of a ring of electronic charge piling between the C and B atoms,which preludes to theσband in solid LiBC[1].Fig.2shows both a substantial lowering of the energy gapǫHL with increase in cluster size as well as a substantial spread in the values obtained for spin multiplicity9for the four geometries depicted in Fig.4.It is also of interest to note that the dimer(LiBC)2binding energy measured relative to the energy of the two separated LiBC units is found from Table2to be∼4eV.In conclusion,by using quantum chemical techniques,we have studied the Aufbau of crystalline LiBC by gathering individual LiBC units into small(LiBC)n clusters.In particular,we focussed on the structure optimization and the computation of selected electronic properties,such the HOMO-LUMO gap as a function of n and the Mulliken charge density distribution of the largest cluster considered here(n=4),which may provide insight into the salient properties of crystalline LiBC.Already for n=4we can recognize the formation of alternating BC rings,with significant overlap of the valence electrons along the ring,and comparably less electron delocalization in the direction perpendicular to the ring,along which a Li–Li dimer is favoured to align.This is reminiscent of the bilayered structure of crystalline LiBC,and of its two-band electronic character,whose relevance for superconductivity is well-known.References[1]H.Rosner, A.Kitaigorodsky,W. E.Pickett,Prediction of high T csuperconductivity in hole-doped LiBC,Phys.Rev.Lett.88(2002)127001. [2]J.K.Dewhurst,S.Sharma,C.Ambrosch-Draxl,B.Johansson,First-principlescalculation of superconductivity in hole-doped LiBC:T c=65K,Phys.Rev.B 68(2003)020504(R).[3]G.G.N.Angilella,A.Bianconi,R.Pucci,Multiband superconductors close to a2D–3D electronic topological transition,J.Supercond.,accepted for publication ...(2005)...[4]M.J.Frisch,G.W.Trucks,H.B.Schlegel,G.E.Scuseria,M.A.Robb,J.R.Cheeseman,V.G.Zakrzewski,J.A.Montgomery,Jr.,R.E.Stratmann,J.C.Burant,S.Dapprich,lam,A.D.Daniels,K.N.Kudin,M.C.Strain, O.Farkas,J.Tomasi,V.Barone,M.Cossi,R.Cammi,B.Mennucci,C.Pomelli,C.Adamo,S.Clifford,J.Ochterski,G.A.Petersson,P.Y.Ayala,Q.Cui,K.Morokuma,D.K.Malick,A.D.Rabuck,K.Raghavachari,J.B.Foresman, J.Cioslowski,J.V.Ortiz,A.G.Baboul,B.B.Stefanov,G.Liu,A.Liashenko, P.Piskorz,I.Komaromi,R.Gomperts,R.L.Martin,D.J.Fox,T.Keith,M.A.Al-Laham,C.Y.Peng,A.Nanayakkara,C.Gonzalez,M.Challacombe,P.M.W.Gill,B.Johnson,W.Chen,M.W.Wong,J.L.Andres,C.Gonzalez,M.Head-Gordon,E.S.Replogle,J.A.Pople,Gaussian03,Revision B05(2003-12-16), Gaussian,Inc.,Pittsburgh PA(2003).AcknowledgementsGGNA wishes to thank the Department of Physics,University of Antwerp, where this work was brought to completion,for warm hospitality and for the stimulating environment.NHM acknowledges that his contribution to thisstudy was made during a visit to the University of Catania.He wishes to thank the Department of Physics and Astronomy for generous support.Table1Various equilibrium bond lengths(in˚A)for some of the clusters considered in this study.LiBC LiBC LiBC(LiBC)2(LiBC)2(LiBC)2(LiBC)2(LiBC)4(LiBC)4(LiBC)4trans trans C2v(1)C2v(2)C1Li–Li 3.122282 4.245581 3.0483 4.253679 3.353511 3.559604 3.300477 Li–C 1.9624 1.9103 1.9078 2.26 2.1502 2.298 2.4106 2.343600 2.646053 2.2972742.2568 2.1433 2.2981 2.1345 2.215844 2.22583 2.2660672.4572 2.4293 2.6453 2.0751 2.215844 2.22583 2.2185182.1353 4.6509 2.1503 4.1552 2.3436 2.646053 2.2927532.215844 2.22583 2.2653262.215844 2.22583 2.2231542.522509 2.02507 2.3166412.522509 2.02507 1.9402652.476577 2.2179492.476577Li–B 1.9624 3.289 2.2398 2.4814 2.574 3.0006 3.3345 2.146662 2.261255 2.2133582.4838 2.18493.0007 2.1358 2.146662 2.29926 2.2742972.2551 2.1058 2.1078 2.1539 2.268792 2.261255 2.2601062.25433.2111 2.1078 2.8393 2.289784 2.261255 2.2109452.268792 2.29926 2.2747072.268792 2.261255 2.2606122.289784 2.45892 2.2113032.268792 2.45892 2.1571412.329519 2.3314812.329519B–C 1.3944 1.3787 1.6026 1.4185 1.4066 1.3508 1.4131 1.530041 1.489521 1.4965763.28224.0533 3.8477 4.1366 1.546234 1.485995 1.5673491.3999 1.4091 1.4583 1.3942 1.499536 1.473746 1.4845841.4186 1.4496 1.3868 1.4616 1.534722 1.515207 1.5292491.534722 1.515207 1.5166921.571215 1.63323 1.6533841.546234 1.485995 1.6207021.499536 1.473746 1.49723S=1S=3S=5Fig.1.Fully optimized configuration of the LiBC singlet cluster for S=1,3,5(left to right;Li:purple;B:pink;C:grey).Table2Calculated properties of(LiBC)n clusters.All energies are in hartrees.n S E HF E HF/nα-HOMOα-LUMOβ-HOMOβ-LUMOS =1S =1(trans)S =3S =3(trans)Fig.3.(a),top row:Fully optimized configurations of the two isomer singlet (LiBC)2clusters.(b),bottom row:Fully optimized configurations of the two isomer triplet (LiBC)2clusters.S =9,C 2v (1)S =9,C 2v (2)S =9,C 2v (3)S =9,C 1Fig.4.Fully optimized configurations of the four isomer quadruplet (LiBC)4clusters with C 2v symmetry (top row)and C 1symmetry (bottom).Some of the frequencies of the C 2v (3)are imaginary,the other three isomers shown being stable.Fig.5.Isosurfaces of the valence electron density for the(LiBC)4cluster with C1 symmetry in Fig.4.Each isosurface is labeled with the relative value of the electrondensity(0.10−0.20),while each atom is labeled with its Mulliken atomic charge.。