MSA-0486-TR1 双极微波单片集成电路分放大器
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4~10GHz宽带单片集成低噪声放大器设计陈莹;李斌【期刊名称】《中国科学院上海天文台年刊》【年(卷),期】2011(000)001【摘要】在单片微波集成电路领域,放大器的设计往往不能兼顾噪声、增益和带宽,通常为达到最佳噪声和增益会限制带宽,或者为增大带宽而牺牲噪声和增益.本文采用稳懋公司0.15 μmpHEMT工艺,综合各种因素,设计了一款宽带低噪声放大器电路,其频率范围4~10 GHz,增益约25 dB,噪声温度低于100 K,输入输出回波损耗大于10 dB.%In this paper, an LNA circuit over 4~10 GHz is presented and investigated based on the process of WIN 0.15 μm pHEMT technology. The schematic simulation results indicates that total gain over 25 dB is obtained as well as the noise temperature below 100 K. Moreover, the input and output return losses are both more than 10 dB.【总页数】8页(P121-128)【作者】陈莹;李斌【作者单位】中国科学院上海天文台,上海 200030;中国科学院研究生院,北京100049;中国科学院上海天文台,上海 200030【正文语种】中文【中图分类】TN929.11【相关文献】1.4~8GHz宽带单片集成低噪声放大器设计 [J], 俞汉扬;陈良月;李昕;杨涛;高怀2.一种10GHz高增益低噪声放大器设计 [J], 郑世程;吕志强;陈岚3.基于GaAs工艺超宽带低噪声放大器设计 [J], 黄国皓;黄玉兰;杨小峰4.X波段宽带单片集成低噪声放大器设计 [J], 张德智;祝家秀;徐今5.60GHz高增益宽带单片集成低噪声放大器 [J], 侯阳;张健;李凌云;孙晓玮因版权原因,仅展示原文概要,查看原文内容请购买。
单片微波集成电路〔MMIC〕,有时也称射频集成电路(RFIC),它是随着半导体制造技术的开展,特别是离子注入控制水平的提高和晶体管自我排列工艺的成熟而出现的一类高频放大器件。
微波集成电路 Microwave Integrated Circuit工作在300M赫~300G赫频率范围内的集成电路。
简称MIC。
分为混合微波集成电路和单片微波集成电路。
前者是用厚膜技术或薄膜技术将各种微波功能电路制作在适合传输微波信号的介质(如高氧化铝瓷、蓝宝石、石英等)上,再将分立有源元件安装在相应位置上组成微波集成电路。
这种电路的特点是根据微波整机的要求和微波波段的划分进展设计和制造,所用集成电路多是专用的。
单片微波集成电路那么是将微波功能电路用半导体工艺制作在砷化镓或其他半导体芯片上的集成电路。
这种电路的设计主要围绕微波信号的产生、放大、控制和信息处理等功能进展,大局部电路都是根据不同整机的要求和微波频段的特点设计的,专用性很强。
在这类器件中,作为反应和直流偏置元件的各个电阻器都采用具有高频特性的薄膜电阻,并且与各有源器件一起封装在一个芯片上,这使得各零件之间几乎无连线,从而使电路的感抗降至最低,且分布电容也极小,因而可用在工作频率和频宽都很高的MMIC放大器中。
目前,MMIC的工作频率已可做到40GHz,频宽也已到达15GHz,因而可广泛应用于通信和GPS, 等各类设备的射频、中频和本振电路中。
根据制作材料和内部电路构造的不同,MMIC可以分成两大类:一类是基于硅Silicon晶体管的MMIC,另一类是基于砷化镓场效应管〔GaAs FET〕的MMIC。
GaAs FET类MMIC具有工作频率高、频率范围宽、动态范围大、噪声低的特点,但价格昂贵,因此应用场合较少;而硅晶体管的MMIC性能优越、使用方便,而且价格低廉,因而应用非常广泛.微波集成电路是工作在微波波段和毫米波波段,由微波无源元件、有源器件、传输线和互连线集成在一个基片上,具有某种功能的电路。
Product Obsolescence NotificationIssue Date: 03 July 2012Revision Date: 17 July 2012OBS070312WSD2 Dear Customer,Avago Technologies regrets to announce the obsolescence of the following products.Item Avago Part Number Standard orSpecial Product Recommended Replacement Part1 AFEM-7751-RM1 Standard ACPM-5005-TR12 AFEM-7751-TR1 Standard ACPM-5005-TR13 AMMC-6550-W10 Standard AMMC-6545-W104 AMMC-6550-W50 Standard AMMC-6545-W505 AMMP-6421-BLKG Standard AMMP-6408-BLKG6 AMMP-6421-TR1G Standard AMMP-6408-TR1G7 AMMP-6421-TR2G Standard AMMP-6408-TR2G8 AMMP-6441-BLKG Standard AMMP-6442-BLKG9 AMMP-6441-TR1G Standard AMMP-6442-TR1G10 AMMP-6441-TR2G Standard AMMP-6442-TR2G11 HBAT-5400-BLKG Standard HSMS-2700-BLKG12 HBAT-5400-TR1G Standard HSMS-2700-TR1G13 HBAT-5400-TR2G Standard HSMS-2700-TR2G14 HBAT-5402-BLKG Standard HSMS-2702-BLKG15 HBAT-5402-TR1G Standard HSMS-2702-TR1G16 HBAT-5402-TR2G Standard HSMS-2702-TR2G17 HBAT-540B-BLKG Standard HSMS-270B-BLKG18 HBAT-540B-TR1G Standard HSMS-270B-TR1G19 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单片微波集成电路单片微波集成电路(Microwave Monolithic Integrated Circuit,简称MMIC)是一种以半导体材料为基础的射频和微波电路,在无线通讯、雷达、卫星通信、毫米波通信等领域具有重要应用。
下面将介绍MMIC的主要特点、分类和应用领域。
一、MMIC的主要特点1. 高度集成:MMIC采用半导体技术,可以在单个芯片上实现包括放大器、混频器、滤波器、调制器等多种组件,实现高度集成,降低了系统的复杂性和成本。
2. 高频带宽:MMIC的工作频率可达数GHz到数百GHz,能够支持高速数据传输和宽频信号处理,满足高速通信的要求。
3. 高工作温度:由于采用高质量的半导体材料,MMIC具有高可靠性和稳定性,能够在宽温度范围内工作。
4. 低功耗和小尺寸:MMIC具有低功耗和小尺寸的优点,适合于电池电源供电的无线通信应用。
二、MMIC的分类按照不同的功能,MMIC可以分为以下几类:1. 放大器:用于将微弱信号放大到合适的水平,以便后续处理或传输。
2. 混频器:用于将两个不同频率的信号混合在一起,产生新的频率信号,实现频率转换和调制。
3. 滤波器:用于滤除不需要的频率分量,只保留所需的信号。
4. 功率放大器:用于将信号的功率增加到所需的水平,以便实现远距离传输或覆盖广泛区域。
5. 器件驱动器:用于控制器件的工作状态,实现信号的调制和解调。
6. 参考振荡器:用于提供稳定的参考信号,以便其他组件的工作。
三、MMIC的应用领域1. 无线通信:MMIC广泛应用于手机、WiFi、蓝牙等无线通信系统中,实现高速数据传输和宽频信号处理。
2. 雷达:MMIC用于实现雷达探测系统中的放大器、混频器、滤波器等组件,提高雷达探测系统的性能。
3. 卫星通信:MMIC用于卫星通信系统中,实现高速数据传输和宽频信号处理。
4. 毫米波通信:MMIC用于毫米波通信系统中,实现高速数据传输和宽频信号处理,支持更加高速和容量的通信。
国内首款单片集成相控阵T/R芯片诞生
近日,安其威微电子(Archiwave)凭借其在硅工艺微波集成电路设计领域深厚的技术积累,成功研制出国内首款单片集成相控阵T/R芯片
ARW9621。
该款产品集中运用了多项领先的创新技术,满足了相控阵雷达天线系统小型化和低成本的多项要求,向相控阵T/R组件的单芯片化实现跨出了里程碑的一步。
据悉,该芯片已经通过高低温性能指标和质量检验,用户正在做系统测试。
图1 工程师指尖上的全集成TR裸芯片尺寸约5x5平方毫米
芯片功能和优势
图2. S波段硅工艺全集成相控阵T/R芯片功能框图
图3 芯片评估板
安其威微电子推出的首款单片全集成T/R芯片ARW9621工作在S波段,采用QFN8X8封装。
单颗芯片上集成了多个高性能射频模块,实现了传统
T/R组件模块的全部功能,其主要优势体现在以下多个方面:。
THE BIG DEALy Millimeter wave switching (up to 50 GHz) y Excellent performance to 50 GHzy High reliability, 2 million switch cycles y 3W power rating (cold switching)PRODUCT OVERVIEWMini-Circuits’ RC-2SP6T-50 houses a pair of independently controlled, electro-mechanical switches, operating over an extremely wide bandwidth, from DC to 50 GHz with high isolation and low insertion loss. The absorptive switches are of a failsafe and break-before-make-configuration, with a minimum lifetime of 2 million switching cycles per switch position, when used within the noted specifications.The switch box is constructed in a compact, rugged metal case (5.5 x 6.0 x 2.75”) with all 2.4 mm (f) RF connectors on the front panel. The switches are controlled via USB or Ethernet, allowing control directly from a PC, or remotely over a network. Full software support is provided, including our user-friendly GUI application for Windows and a full API with programming instructions for Windows and Linux environments (both 32-bit and 64-bit systems).CASE STYLE: PF2675SOFTWARE PACKAGEAPPLICATIONSy 5G node / device testing y Automated test equipmenty Fail-safe / redundancy switchingRev. AECO-009232RC-2SP6T-50ELECTRICAL SPECIFICATIONS AT 25°C2. Hot switching powers above this level will degrade the switch lifetimeSWITCHING CONFIGURATION:• Normally open (all port disconnected)• Absorptive (internal terminations on ports J1-J6)OUTLINE DRAWING (PF2675)A B C D E F G H J K L M N P wt6.00 5.50 2.750.270.530.92 4.380.910.280.28 3.500.38 6.720--grams 152.40139.7069.85 6.8613.4623.37111.2523.117.117.1188.909.53170.69--1110 OUTLINE DIMENSIONS(Inch)mmTYPICAL PERFORMANCE DATA (PER SWITCH)SOFTWARE SPECIFICATIONSSOFTWARE & DOCUMENTATION DOWNLOAD:y Mini-Circuits’ full software and support package including user guide, Windows GUI, DLL files, programming manual and examples can be downloaded free of charge from: https:///softwaredownload/rfswitchcontroller.html y Please contact ****************************************APPLICATION PROGRAMMING INTERFACE (API)ETHERNET SUPPORT:y Simple ASCII / SCPI command set for attenuator controly Communication via HTTP or T elnety Supported by most common programming environmentsUSB SUPPORT (WINDOWS):y ActiveX COM DLL file for creation of 32-bit programs library DLL file for creation of 32 / 64-bit programsy Supported by most common programming environments (refer to application note AN-49-001 for summary of suported environments)USB SUPPORT (LINUX):y Direct USB programming using a series of USB interrupt codesFull programming instructions and examples available for a wide range of programming environments / languages.GRAPHICAL USER INTERFACE (GUI) FOR WINDOWS - KEY FEATURESy Connect via USB or Ethernety Run GUI in “demo mode” to evaluate software without a hardware connectiony View and set switch states at the click of a buttony Configure and run timed switching sequencesy Set start-up switch statey Configure Ethernet IP settingsORDERING INFORMATIONPlease contact Mini-Circuits’ T est Solutions department for price and availability: ******************************AC Power Cords5If you need a Power cord for a country not listed please contactOPTIONAL ACCESSORIESUSB-CBL-AB-3+ 2.7 ft (0.8 m) USB Cable: USB type A(Male) to USB type B (Male)USB-CBL-AB-7+ 6.8 ft (2.1 m) USB Cable: USB type A(Male) to USB type B (Male)USB-CBL-AB-11+11 ft (3.4 m) USB Cable: USB type A(Male) to USB type B (Male)CBL-RJ45-MM-5+ 5 ft (1.5 m) Ethernet cable: RJ45(Male) to RJ45 (Male) Cat 5E cableBKT-272-08+Bracket (One set of 2 each)NOTESA.Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.B.Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.C.The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard T erms”); Purchasers of this part are entitled to the rightsand benefits contained therein. For a full statement of the standard. T erms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at /MCLStore/terms.jsp。
Cascadable Silicon Bipolar MMIC␣Amplifier Technical DataFeatures•Cascadable 50 Ω Gain Block • 3 dB Bandwidth:DC to 3.2 GHz•8 dB Typical Gain at 1.0␣GHz •12.5 dBm Typical P 1 dB at 1.0␣GHz •Unconditionally Stable (k>1)•Surface Mount Plastic Package •Tape-and-Reel Packaging Option Available [1]MSA-048686 Plastic PackageTypical Biasing ConfigurationNote:1.Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.R V CC > 7 VINOUTDescriptionThe MSA-0486 is a high perfor-mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost,surface mount plastic package.This MMIC is designed for use as a general purpose 50 Ω gain block.Typical applications includenarrow and broad band IF and RF amplifiers in commercial and industrial applications.The MSA-series is fabricated using HP’s 10 GHz f T , 25␣GHz f MAX ,silicon bipolar MMIC process which uses nitride self-alignment,ion implantation, and gold metalli-zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.MSA-0486 Absolute Maximum RatingsParameterAbsolute Maximum [1]Device Current85 mA Power Dissipation [2,3]500 mW RF Input Power+13 dBm Junction Temperature 150°C Storage Temperature–65 to 150°CThermal Resistance [2,4]:θjc = 100°C/WNotes:1.Permanent damage may occur if any of these limits are exceeded.2.T CASE = 25°C.3.Derate at 10 mW/°C for T C > 100°C.4.See MEASUREMENTS section “Thermal Resistance” for more information.Part Number Ordering InformationPart Number No. of DevicesContainer MSA-0486-TR110007" Reel MSA-0486-BLK100Antistatic BagFor more information, see “Tape and Reel Packaging for Semiconductor Devices”.G P Power Gain (|S 21|2) f = 0.1 GHz dB8.3f = 1.0 GHz 7.08.0∆G P Gain Flatness f = 0.1 to 2.0 GHzdB ±0.6f 3 dB 3 dB Bandwidth GHz3.2I nput VSWR f = 0.1 to 3.0 GHz 1.5:1Output VSWR f = 0.1 to 3.0 GHz 1.9:1NF 50 Ω Noise Figuref = 1.0 GHz dB 7.0P 1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5IP 3Third Order Intercept Point f = 1.0 GHz dBm 25.5t D Group Delay f = 1.0 GHz psec 140V d Device VoltageV 4.25.256.3dV/dTDevice Voltage Temperature CoefficientmV/°C–8.0Note:1.The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current is on the following page.Electrical Specifications [1], T A = 25°CSymbolParameters and Test Conditions: I d = 50 mA, Z O = 50 ΩUnitsMin.Typ.Max.VSWRMSA-0486 Typical Scattering Parameters (Z O = 50 Ω, T A = 25°C, I d = 50 mA)Freq.GHzMagAngdBMagAngdBMagAngMagAng0.1.141788.4 2.62175–16.2.1541.16–100.2.141758.3 2.61170–16.3.1532.16–200.4.141718.2 2.57161–16.3.1543.17–390.6.131688.1 2.54151–16.0.1584.18–570.8.131668.0 2.52141–15.9.1615.20–741.0.131657.92.48131–15.7.1656.21–881.5.151687.7 2.42108–14.8.1828.27–1212.0.211687.3 2.3284–14.0.1997.32–1492.5.29165 6.8 2.1865–13.1.2224.38–1683.0.371535.9 1.9743–12.7.231–1.401733.5.44142 4.8 1.7424–12.5.238–5.411574.0.50130 3.6 1.527–12.5.238–10.411455.0.61109 1.3 1.16–21–12.7.231–17.43132A model for this device is available in the DEVICE MODELS section.S 11S 21S 12 S 226.56.07.07.58.0FREQUENCY (GHz)Figure 5. Noise Figure vs. Frequency.N F (d B )G p (d B )FREQUENCY (GHz)Figure 1. Typical Power Gain vs. Frequency, T A = 25°C.246810V d (V)Figure 2. Device Current vs. Voltage.20406080I d (m A )2345671–25+25+55+85P 1 d B (d B m )N F (d B )G p (d B )TEMPERATURE (°C)Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, I d =50mA.FREQUENCY (GHz)Figure 4. Output Power at 1 dB Gain Compression vs. Frequency.36912151821P 1 d B (d B m )Typical Performance, T A = 25°C(unless otherwise noted)86 Plastic Package Dimensions0.51 ±(0.020 ±DIMENSIONS ARE IN MILLIMETERS (INCHES)。