DSK16 SOD-123FL系列规格书推荐

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贴片肖特基二极管 B5818W SOD-123 规格书推荐

B5819W
40 40 28
Unit V V V A A A mW ℃/W ℃ ℃
Repetitive Peak Forward Current Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage Temperature
VR
(V)
1000
Capacitance Characteristics
Ta=25℃
600
Power Derating Curve
CAPACITANCE BETWEEN TERMINALS CT (pF)
(mW) PD POWER DISSIPATION
f=1MHz
500
400
100
300
200
100
1
1
Ta=100 C
o
IF
C
o
REVERSE CURRENT IR
FORWARD CURRENT
=1 00
T
a
=2 5
C
o
0.1
T
a
0.1
Ta=25 C
0.01
o
0.01 0.0
0.2
0.4
0.6
0.8
1E-3
0
5
10
15
20
25
FORWARD VOLTAGE
VF
(V)
REVERSE VOLTAGE
Dimensions In Inches Min Max 0.041 0.049 0.000 0.004 0.041 0.045 0.018 0.026 0.003 0.006 0.059 0.067 0.102 0.110 0.140 0.152 0.020 REF 0.010 0.018 0° 8°

DSK36肖特基二极管原厂推荐

Catalog Number
Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Operating junction temperature range Storage temperature range
FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT,AMPERES
20 10
10 TJ=100 C
1
TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE

RATINGS AND CHARACTERISTIC CURVES DSK32 THRU DSK310
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
PEAK FORWARD SURGE CURRENT, AMPERES

二极管封装尺寸sod123rd

二极管封装尺寸sod123rd中括号为主题：二极管封装尺寸SOD123RD引言：在电子领域中，二极管是一种最常用的电子元件之一，常用于整流、开关和保护电路中。

二极管的封装尺寸对于电路设计和制造工艺具有重要影响。

而SOD123RD是一种常见的二极管封装尺寸，本文将一步一步回答关于SOD123RD的问题。

1. 什么是SOD123RD封装？SOD123RD封装是一种小型的二极管封装尺寸，其名称可以根据其形状和尺寸的特点进行解读：- SOD：表示“Small Outline Diode”，即小外形二极管；- 123：表示其尺寸大小，具体规格尺寸如后文所述；- RD：表示反向栅极二极管（Reverse Diode）。

2. SOD123RD封装的具体尺寸是多少？SOD123RD封装的具体尺寸如下：- 封装尺寸：长2.00mm，宽1.25mm，高0.95mm；- 引脚间距：0.95mm。

3. SOD123RD封装的电器参数有哪些？SOD123RD封装的电器参数主要包括以下几方面：- 峰值反向电压（VRRM）：常见的规格有20V、40V、60V等；- 平均整流电流（IO）：常见的规格有1A、2A、3A等；- 正向压降（VF）：通常介于0.5V到1.1V之间；- 反向击穿电压（VR）：常见的规格有35V、60V、90V等。

4. SOD123RD封装的应用领域有哪些？根据其电器参数和封装特点，SOD123RD封装广泛应用于以下领域：- 通信设备：如手机、电视机、路由器等。

- 电源管理：包括电源适配器、电池充电器等。

- 汽车电子：例如汽车导航、车载音响等。

- 工业控制：如传感器、工业自动化设备等。

5. SOD123RD封装与其他常见封装有何区别？与其他常见的二极管封装相比，SOD123RD封装有以下特点和区别：- 尺寸小巧：SOD123RD的尺寸相对较小，适用于空间有限的电路设计；- 提供反向栅极：SOD123RD是一种带有反向栅极的二极管封装，适用于特定的应用场景；- 引脚间距小：SOD123RD的引脚间距只有0.95mm，需要在PCB设计和焊接过程中特别注意。

DSK34 SOD-123FL系列规格书推荐

RATINGS AND CHARACTERISTIC CURVES DSK32 THRU DSK310
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
PEAK FORWARD SURGE CURRENT, AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
50 35 50
60 42 60 3.0 80.0
70 49 70
80 56 80
90 63 90
100 70 100
0.52
0.55 20.085 10.0 -50 to +150
Volts mA C C
-50 to +150
1 of 2
深圳理悠科技有限公司
2.8±0.1 1.3± 0.15 0.10-0.30 0.6±0.25
１．０±0.2
1.8± 0.1
MECHANICAL DATA
Case: JEDEC SOD-123FL molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.0007 ounce, 0.02 grams
1 TJ=75 C
0.1
DSK32-DSK34 DSK35-DSK36 DSK37-DSK310
0.2 0.4 0.6 0.8 1.0 1.1
0.1
0.01
0.01
TJ=25 C

SOD4002 SOD-123FL 规格书推荐

25.0 1.1 10.0 50.0 4 180 -55 to +150
Amps Volts µA pF °C/W C
Note: 1.Averaged over any 20ms period. 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted
SYMBOLS
Part Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TA=65 C (NOTE 1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) TL=25 C Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=125 C Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) Operating junction and storage temperature range VRRM VRMS VDC I(AV)

SOD1H1 THRU SOD1H8

FEATURES
Glass passivated device Ideal for surface mouted applications Low reverse leakage Metallurgically bonded construction High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES SOD1H1 THRU SOD1H8
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
SOD1H1 THRU SOD1H8
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
SOD-123FL
Cathode Band Top View
600 420 600
800 560 800
1000 700 1000
IFSM VF IR trr 50 1.0
25.0 1.3 5.0 100.0 75 180 -50 to +150 1.7
Amps Volts µA ns K/W C
Typical thermal resistance RθJA Operating junction and storage temperature range TJ,TSTG Note: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A.

日本CRD-2011最新应用资料

小体积、低成本、简单电路日本石塚CRD恒流二极管应用介绍应用采用超小体积SOD-123FL封装（类似电阻1206封装）的日本石塚CRD恒流二极管适用于多个小功率LED串联电路，输入电压220V或110V，亦可用于低压电路，每串串联个数可达92pcs(LED Vf =3.2V)；该系列CRD应用时不需其它外围辅助元件，电路简单稳定、成本低，只需经市电整流滤波，再加上CRD即可；普遍适用于T5、T8 LED日光灯管、LED灯条模组、LED射灯、LED台灯、LED球泡灯及其它LED照明装饰类产品。

特点* 小体积、低成本◆采用超小SOD-123FL封装，狭小的空间也完全可以适用；* 高稳定性◆即使输入电压及LED VF值变动也可提供恒定电流输出；* 高效率◆串灯合适，效率可高达90%以上；* 负温度系数特性◆环境温度升高，CRD抑制输出电流，保护LED。

备注：（低厚度SOD-123FL封装，SOD-123FL封装器件可直接替代电路板中的SOD-123（JEDEC DO219）封装器件。

SOD-123FL封装的瓦特/ mm2 热性能比SOD-123提高达149%，比SMA提高达90.5%，比PowerMite提高达26.5%。

SOD123FL厚度（最大为1mm）比标准SOD123封装低25%或以上，适宜电路板空间受限的便携应用。

SOD-123FL封装的引脚结构和线夹设计，允许低正向电压。

附带线夹的内部设计比引线粘结封装具有更好的浪涌电流能力，适合瞬态电压抑制应用）。

共9页之第1页常用恒流二极管主要参数型号恒流范围值（MA）最高耐压（V）恒流启动电压（V）最佳压降6-20V S-562T 5.0-6.0 100 4.56-20V S-103T 8.0-12.0 50 3.56-15V S-123T 9.0-14.0 50 3.86-15V S-153T 12.0-15.0 50 4.36-15V S-183T 15.0-18.0 50 4.6常规应用电路①常规220V/100V单串应用电路共9页之第2页②常规220V /100V多串应用电路备注：常规应用图中参数仅供参考，88PCS LED/串是在LED电流为20MA/VF=3.2V的情况所采用的串法，实际应用需依据所采用电解电容和所要求的LED电流及此时的VF值来调整串数。

DFR1A THRU DFR1M

DFR1BDFR1D NhomakorabeaDFR1G
DFR1J
DFR1K
DFR1M
UNITS VOLTS VOLTS VOLTS Amp
F1A
F1B
F1D
F1G
F1J
F1K
F1M
50 35 50
100 70 100
200 140 200
400 280 400 1.0
600 420 600
800 560 800
1000 700 1000
Glass passivated device Ideal for surface mouted applications Low reverse leakage Metallurgically bonded construction High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension
IFSM VF IR trr 150
25.0 1.3 5.0 50.0 250 15 -50 to +150 500
Amps Volts µA ns pF C
Typical junction capacitance (NOTE 3) CJ Operating junction and storage temperature range TJ,TSTG Note: 1.Averaged over any 20ms period. 2.Measured with IF=0.5A, IR=1A, Irr=0.25A. 3.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

SOD-123型号的塑封稳压二极管商品说明书

SOD-123贴片塑封稳压二极管SOD-123 Plastic-Encapsulate Zener Diode特征Featuresz 齐纳击穿阻抗低; Low Zener Impedancez 最大功率耗散500mW; Power Dissipation of 500mW z 高稳定性和可靠性。

High Stability and High Reliability 机械数据Mechanical DataSOD-123z 封装: SOD-123封装SOD-123 Small Outline Plastic Package z 极性: 色环端为负极Polarity: Color band denotes cathode end z 环氧树脂UL 易燃等级Epoxy UL: 94V-0 z安装位置: 任意Mounting Position: Any极限值和温度特性(TA = 25℃ 除非另有规定)Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.) 参数 Parameters符号Symbol 数值Value 单位Unit功率消耗Power DissipationPd 500 mW正向压降Forward Voltage @IF=10mA Vf 0.9 V存储温度Storage temperature rangeTs -65-+150℃ 1) Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm²2) Short duration test pulse used to minimize self-heating effect 3)f=1KHz电特性 (TA = 25℃ 除非另有规定)Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified).Zener Voltage RangeMaximum Zener Impedance MaximumReverse CurrentVz@Izt IztZzt @Izt Zzk @IzkIzk IR VRTypicalTemperaturecoefficent @IZTC=mV/℃TestCurrentIZTC Device MarkingNom(V) Min(V) Max(V) mA Ω mAuA V Min Max mA BZT52B2V4 2WX 2.4 2.35 2.45 5 100 600 1.050 1.0 -3.5 0 5 BZT52B2V7 2W1 2.7 2.65 2.75 5 100 600 1.020 1.0 -3.5 0 5 BZT52B3V0 2W2 3.0 2.94 3.06 5 95 600 1.010 1.0 -3.5 0 5 BZT52B3V3 2W3 3.3 3.23 3.37 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52B3V6 2W4 3.6 3.53 3.67 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52B3V9 2W5 3.9 3.82 3.98 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52B4V3 2W6 4.3 4.21 4.39 5 90 600 1.0 3 1.0 -3.5 05BZT52B4V7 2W7 4.7 4.61 4.79 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52B5V1 2W8 5.1 5.00 5.20 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52B5V6 2W9 5.6 5.49 5.71 5 40 400 1.0 1 2.0 -2.0 2.5 5 BZT52B6V2 2WA 6.2 6.08 6.32 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52B6V8 2WB 6.8 6.66 6.94 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52B7V5 2WC 7.5 7.35 7.65 5 15 80 1.0 15.0 2.5 5.3 5BZT52B8V2 2WD 8.2 8.04 8.36 5 1580 1.00.7 5.0 3.2 6.2 5 BZT52B9V1 2WE 9.1 8.929.28 5 15 100 1.00.5 6.0 3.8 7.0 5 BZT52B10 2WF 10 9.80 10.20 5 20 150 1.00.2 7.0 4.5 8.0 5 BZT52B11 2WG 11 10.78 11.22 5 20 150 1.00.1 8.0 5.4 9.0 5 BZT52B12 2WH 12 11.76 12.24 5 25 150 1.00.1 8.0 6.0 10.0 5 BZT52B13 2WI 13 12.74 13.26 5 30 170 1.00.1 8.0 7.0 11.051) 2)Zener Voltage RangeMaximum Zener Impedance MaximumReverse CurrentVz@Izt Izt Zzt @Izt Zzk @IzkIzkIR VRTypicalTemperaturecoefficent @IZTC=mV/℃TestCurrentIZTC Device MarkingNom(V) Min(V) Max(V) mA Ω mAuA V Min Max mABZT52B15 2WJ 15 14.70 15.30 5 30 200 1.00.1 10.5 9.2 13.0 5 BZT52B16 2WK 16 15.68 16.32 5 40 200 1.00.1 11.2 10.4 14.0 5 BZT52B18 2WL 18 17.64 18.36 5 45 225 1.00.1 12.6 12.4 16.0 5 BZT52B20 2WM 20 19.60 20.40 5 55 225 1.00.1 14.0 14.4 18.0 5 BZT52B22 2WN 22 21.56 22.44 5 55 250 1.00.1 15.4 16.4 20.0 5 BZT52B24 2WO 24 23.52 24.48 5 70 250 1.00.1 16.8 18.4 22.0 5 BZT52B27 2WP 27 26.46 27.54 2 80 300 0.50.1 18.9 21.4 25.3 2 BZT52B30 2WQ 30 29.40 30.60 2 80 300 0.50.1 21.0 24.4 29.4 2 BZT52B33 2WR 33 32.34 33.66 2 80 325 0.50.1 23.1 27.4 33.4 2 BZT52B36 2WS 36 35.28 36.72 2 90 350 0.50.1 25.2 30.4 37.4 2 BZT52B39 2WT 39 38.22 39.78 2 130 350 0.50.1 27.3 33.4 41.2 2 BZT52B43 2WU 43 41.16 43.84 2 100 700 1.00.1 32.0 10.0 12.0 5 BZT52B47 2WV 47 46.06 47.94 2 100 750 1.00.1 35.0 10.0 12.0 5 BZT52B51 2WW 51 49.98 52.02 2 100 750 1.00.1 38.0 10.0 12.05Breakdown characteristicsat Tj=constant (pulsed)Forward characteristicsAdmissible power dissipation versus ambient temperaturePulse thermal resistance versus pulse durationDynamic resistance versus Zener currentCapacitance versus Zener voltageDynamic resistance versus Zener current Dynamic resistance versus Zener current Thermal differential resistance versus Zener voltageDynamic resistance versus Zener voltageTemperature dependence of Zener voltage versus Zener voltageTemperature dependence of Zener voltage versus Zener voltageChange of Zener voltage versus junction temperatureChange of Zener voltage versus junction temperatureChange of Zener voltge from turn-on up to the point of thermalequilibrium versus Zener voltageSOD-123 PACKAGE OUTLINE Plastic surface mounted package焊盘设计参考Precautions: PCB DesignRecommended land dimensions for SOD-123 diode. Electrode patterns for PCBs中心距: 3.24 脚宽: 0.55 焊盘宽: 1.00 脚长: 0.50 焊盘长: 0.80 技术要求:1, 塑封体尺寸: 2.70 X 1.60 2: 未注公差为: ±0.053, 所有单位: mm。

SOD SOT SOP系列封装尺寸

DFN1612-6 0.15 0.175 0.15 0.60 0.25 0.65 0.45 0.10 0.15
DFN1310H4-6 0.16 0.17 0.15 0.52 0.20 0.52 0.375 0.09 0.06
Y C
X2
Z
DFN1616-6
Dimensions Value (in mm)
Value (in mm) 1.38 0.15 0.15 0.95 0.75 0.40 0.75 0.76
ALL DIMENSIONS ARE NOMINAL VALUES SHOWN IN MILLIMETERS Note: The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary depending on application. These numbers may be modified based on user equipment capability or fabrication criteria. A more robust pattern may be desired for wave soldering and is calculated by adding 0.2 mm to the ‘Z’ dimension. For further information, please reference document IPC-7351A, Naming Convention for Standard SMT Land Patterns, and for International grid details, please see document IEC, Publication 97.

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深圳理悠科技有限公司
DSK12 THRU DSK120
SOD-123FL
Cathode Band Top View

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere
5.0
0
0
1 10 100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES
INSTANTANEOUS FORWARD CURRENT,AMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
JUNCTION CAPACITANCE, pF
2000 1000
DSK12-DSK14 DSK15-DSK120
100
TJ=25 C
10 0.1 1.0 10 100
REVERSE VOLTAGE,VOLTS
2 of 2
2.8±0.1 1.3± 0.15 0.10-0.30 0.6±0.25
１．０±0.2
1.8± 0.1
MECHANICAL DATA
Case: JEDEC SOD-123FL molded plastic body Terminals: Solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.0007 ounce, 0.02 grams
FEATURES
The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension
20 14 20
30 21 30
40 28 40
50 35 50
60 42 60
70 49 70
80 56 80
90 63 90
100 70 100
150 105 150
200 140
1.0 25.0 0.55 10.0 110 -65 to +125 -65 to +150 0.70 0.5 5.0 80 -65 to +150 0.85
SYMBOLS DSK12 DSK13 DSK14 K12 K13 K14 DSK15 DSK16 K15 K16 DSK17 DSK18 DSK19 DSK110 DSK115 DSK120 K17 K18 K19 K110 K115 K120
UNITS
VRRM VRMS VDC I(AV) IFSM VF IR CJ TJ TSTG

RATINGS AND CHARACTERISTIC CURVES DSK12 THRU DSK120
FIG. 1- FORWARD CURRENT DERATING CURVE
1
PEAK FORWARD SURGE CURRENT, AMPERES
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
3.7±0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Part Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Operating junction temperature range Storage temperature range
20 10
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
10 TJ=100 C
1
TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE
1 TJ=75 C
0.1
DSK12-DSK14 DSK15-DSK16 DSK17-DSK115 DSK120
VOLTS VOLTS 200 VOLTS Amp Amps
0.95 0.2 2.0
Volts mA pF C C
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
1 of 2
深圳理悠科技有限公司
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
0.2 0.4 0.6 0.8 1.0 1.1
0.1
0.01
TJ=25 C
0.01
0.001Biblioteka 02040
60
80
100
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
30 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)
0.8
25
0.6
Single Phase Half Wave 60Hz Resistive or inductive Load
20
15
0.4
10
0.2
DSK12-DSK16 DSK17-DSK120
0 25 50 75 100 125 150 175