BT151

目录目录第一章课程设计内容与要求分析 (1)1.1课程设计内容 (1)1.2课程设计要求分析 (1)第二章控制电路设计 (3)2.1电源电路设计 (3)2.2 声控延时电路设计 (3)2.2.1 555简介 (4)2.3 晶闸管开关电路设计 (5)2.3.1晶闸管工作原理 (6)2.4 电路原件清单 (8)课程设计总结 (10)参考文献附录1：电路图附录2：实物图第一章课程设计内容与要求分析1.1课程设计内容1. 设计用于220V/60W白炽灯控制的声控延时电路，要求在弱声环境下白炽灯灭，强声环境下白炽灯点亮50S，然后白炽灯灭。

延时控制使用NE555实现，白炽灯控制主电路采用BT151实现控制。

2. 白炽灯在强声环境下点亮时间不低于40S，亮度稳定。

1.2课程设计要求分析我的设计题目是晶闸管构成声控延时灯电路。

设计该题目，要明确以下几点：1、该电路为针对实际问题的以弱控强性控制电路。

因此，设计之前要考虑到什么样的电子器件或者是电气部件能作为弱电和强电的接口电路，并且还要对其工作原理比较熟悉。

这一点很关键，它关系到用什么样的电路来实现对照明灯亮灭的控制。

例如，我设计的电路是用晶闸管来作为该电路强弱电的接口电路的。

晶闸管是典型的“以小控大”型电子器件，即能够利用很小的电流去控制晶闸管的导通和截止，从而实现照明灯亮灭的可控性。

本电路采用的是单向晶闸管，当控制极为低电平时，晶闸管截止，控制极为高电平时晶闸管导通。

很明显，利用数字电子技术的相关知识很容易就能够实现对晶闸管工作状态的控制。

2、明确了接口电路问题之后，就可以考虑通过什么样的电路来实现对晶闸管工作状态的控制。

很明显，凡是能够实现输出为高低两种电平的电路都能够对晶闸管进行控制。

对这种电路的要求是能够对外界触发信号进行相应的响应。

3、将题目理解清楚之后，再来考虑用什么样的方式来实现。

考虑到电路对照明灯的控制要有延时功能，这些要求单稳态触发器基本都能满足。

晶闸管和双向可控硅应用规则闸流管闸流管是一种可控制的整流管，由门极向阴极送出微小信号电流即可触发单向电流自阳极流向阴极。

导通让门极相对阴极成正极性，使产生门极电流，闸流管立即导通。

当门极电压达到阀值电压VGT ，并导致门极电流达到阀值IGT，经过很短时间tgt（称作门极控制导通时间）负载电流从正极流向阴极。

假如门极电流由很窄的脉冲构成，比方说1μs，它的峰值应增大，以保证触发。

当负载电流达到闸流管的闩锁电流值 I L 时，即使断开门极电流，负载电流将维持不变。

只要有足够的电流继续流动，闸流管将继续在没有门极电流的条件下导通。

这种状态称作闩锁状态。

注意，VGT ，IGT和IL参数的值都是25℃下的数据。

在低温下这些值将增大，所以驱动电路必须提供足够的电压、电流振幅和持续时间，按可能遇到的、最低的运行温度考虑。

规则 1 为了导通闸流管（或双向可控硅），必须有门极电流≧I GT ，直至负载电流达到≧I L 。

这条件必须满足，并按可能遇到的最低温度考虑。

灵敏的门极控制闸流管，如 BT150，容易在高温下因阳极至阴极的漏电而导通。

假如结温 T j 高于 T jmax , 将达到一种状态，此时漏电流足以触发灵敏的闸流管门极。

闸流管将丧失维持截止状态的能力，没有门极电流触发已处于导通。

要避免这种自发导通，可采用下列解决办法中的一种或几种：1. 确保温度不超过Tjmax。

2. 采用门极灵敏度较低的闸流管，如BT151，或在门极和阴极间串入1kΩ或阻值更小的电阻，降低已有闸流管的灵敏度。

3. 若由于电路要求，不能选用低灵敏度的闸流管，可在截止周期采用较小的门极反向偏流。

这措施能增大IL。

应用负门极电流时，特别要注意降低门极的功率耗散。

截止（换向）要断开闸流管的电流，需把负载电流降到维持电流 I H 之下，并历经必要时间，让所有的载流子撤出结。

在直流电路中可用“强迫换向”，而在交流电路中则在导通半周终点实现。

（负载电路使负载电流降到零，导致闸流管断开，称作强迫换向。

1.Product profile1.1General descriptionPassivated thyristor in a SOT78 plastic package.1.2Features1.3Applications1.4Quick reference data2.Pinning informationBT151-1000RT12 A thyristor high blocking voltage high operating temperatureRev. 01 — 6 August 2007Product data sheetI High thermal cycling performance I V DRM , V RRM is 1000V capableI T j is 150°C capableI Motor control I Static switching I Ignition circuitsI Protection circuitsI V DRM ≤1000V I I T(RMS)≤12A I V RRM ≤1000VI I GT ≤15mA I I TSM ≤120A (t = 10ms)I T j ≤150°CTable 1.PinningPin Description Simplified outline Symbol1cathode (K)SOT78 (3-lead TO-220AB)2anode (A)3gate (G)mbmounting base; connected to anode12mb3sym037AKG3.Ordering information4.Limiting valuesTable 2.Ordering informationType numberPackage NameDescriptionVersion BT151-1000RTSC-46plastic single-ended package; heatsink mounted; 1 mounting hole;3-lead TO-220ABSOT78Table 3.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditionsMin Max Unit V DRM repetitive peak off-state voltage -1000V V RRM repetitive peak reverse voltage -1000V I T(AV)average on-state current half sine wave; T mb ≤134°C;see Figure 1-7.5A I T(RMS)RMS on-state current all conduction angles;see Figure 4and 5-12AI TSMnon-repetitive peak on-state currenthalf sine wave; T j =25°C prior to surge; see Figure 2and 3t = 10 ms -120A t = 8.3 ms-131A I 2t I 2t for fusingt = 10 ms-72A 2s dI T /dt rate of rise of on-state current I TM =20A; I G =50mA;dI G /dt =50mA/µs-50A/µs I GM peak gate current -2A P GM peak gate power -5W P G(AV)average gate power over any 20 ms period -0.5W T stg storage temperature −40+150°C T jjunction temperature-150°CForm factor a = I T(RMS) / I T(AV)Fig 1.Total power dissipation as a function of average on-state current; maximum valuesf =50HzFig 2.Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvaluesI T(AV) (A)8642003aab83051015P tot (W)042.82.21.9conduction angle (degrees)form factor a 30609012018042.82.21.91.57αa = 1.57003aab8298040120160 I TSM (A)0n (number of cycles)110310210t pT j initial = 25 °C maxI TI TSMtt p ≤10msFig 3.Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents;maximum valuesf =50Hz; T mb ≤134°CFig 4.RMS on-state current as a function of surgeduration for sinusoidal currents Fig 5.RMS on-state current as a function of mountingbase temperature; maximum values001aaa956t p (s)10−510−210−310−4102103I TSM (A)10dl T /dt limitt pT j initial = 25 °C maxI TI TSMt surge duration (s)10−210110−1001aaa954101552025I T(RMS)(A)0T mb (°C)−50150100050003aab828841216I T(RMS)(A)5.Thermal characteristicsTable 4.Thermal characteristics Symbol ParameterConditions Min Typ Max Unit R th(j-mb)thermal resistance from junction to mounting basesee Figure 6-- 1.3K/W R th(j-a)thermal resistance from junction to ambientin free air-60-K/WFig 6.Transient thermal impedance from junction to mounting base as a function of pulse width001aaa96210−110−2110Z th(j-mb)(K/W)10−3t p (s)10−511010−110−210−410−3t pt p TPtTδ =6.CharacteristicsTable 5.CharacteristicsT j = 25°C unless otherwise stated.Symbol Parameter Conditions Min Typ Max Unit Static characteristicsI GT gate trigger current V D=12V; I T=100mA; see Figure82-15mA I L latching current V D=12V; I GT=100mA; seeFigure10--40mAI H holding current V D=12V; I GT=100mA; seeFigure11--20mA V T on-state voltage I T=23A- 1.4 1.75VV GT gate trigger voltage I T=100mA; see Figure7V D=12V-0.6 1.5VV D=V DRM(max); T j=150°C0.250.4-VI D off-state current V R=V DRM(max); T j=150°C-0.5 2.5mA I R reverse current V R=V RRM(max); T j=150°C-0.5 2.5mA Dynamic characteristicsdV D/dt rate of rise of off-statevoltage V DM=0.67× V DRM(max); T j=150°C;exponential waveform; gate opencircuit; see Figure12-300-V/µst gt gate-controlled turn-ontime I TM=40A; V D=V DRM(max);I G=100mA; dI G/dt=5A/µs-2-µst q commutated turn-offtime V DM=0.67× V DRM(max); T j=150°C;I TM=20A; V R=25V;(dI T/dt)M=30A/µs; dV D/dt=50V/µs;R GK=100Ω-70-µsFig 7.Normalized gate trigger voltage as a function ofjunction temperatureFig 8.Normalized gate trigger current as a function ofjunction temperatureV o =1.06V R s =0.0304Ω(1)T j = 150°C; typical values (2)T j = 150°C; maximum values (3)T j = 25°C; maximum valuesFig 9.On-state current as a function of on-statevoltage Fig 10.Normalized latching current as a function ofjunction temperatureT j (°C)−50150100050003aab8230.81.21.60.4V GT V GT(25°C)T j (°C)−50150100050003aab8241230I GT I GT(25°C)V T (V)021.50.51001aaa959102030I T (A)0(3)(2)(1)T j (°C)−50150100050003aab8251230I L I L(25°C)Gate open circuitFig 11.Normalized holding current as a function ofjunction temperature Fig 12.Critical rate of rise of off-state voltage as afunction of junction temperature; typical valuesT j (°C)−50150100050003aab826123I H I H(25°C)0003aab827103102104dV D /dt (V/µs)10T j (°C)0150100507.Package outlineFig 13.Package outline SOT78 (3-lead TO-220AB)REFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IECJEDEC JEITA SOT78SC-463-lead TO-220ABDD 1qpL123L 1b 1e eb0510 mmscalePlastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220ABSOT78DIMENSIONS (mm are the original dimensions)A E A 1cQL 2UNIT A 1b 1D 1e p mm2.54q Q A b D c L 2max.3.03.83.515.012.83.302.793.02.72.62.20.70.416.015.20.90.61.451.004.74.11.401.256.65.910.39.7L 1E L 05-03-2205-10-25mounting base8.Revision historyTable 6.Revision historyDocument ID Release date Data sheet status Change notice Supersedes BT151-1000RT_120070806Product data sheet--BT151-1000RT_1© NXP B.V . 2007. All rights reserved.Product data sheet Rev. 01 — 6 August 200711 of 129.Legal information9.1Data sheet status[1]Please consult the most recently issued document before initiating or completing a design.[2]The term ‘short data sheet’ is explained in section “Definitions”.[3]The product status of device(s)described in this document may have changed since this document was published and may differ in case of multiple devices.The latest product status information is available on the Internet at URL .9.2DefinitionsDraft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequences of use of such information.Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s)and title.A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.9.3DisclaimersGeneral —Information in this document is believed to be accurate andreliable.However,NXP Semiconductors does not give any representations or warranties,expressed or implied,as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and without notice.This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use —NXP Semiconductors products are not designed,authorized or warranted to be suitable for use in medical, military, aircraft,space or life support equipment, nor in applications where failure ormalfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage.NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Limiting values —Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134)may cause permanent damage to the device.Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in theCharacteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale,as published at /profile/terms , including those pertaining to warranty,intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant,conveyance or implication of any license under any copyrights,patents or other industrial or intellectual property rights.9.4TrademarksNotice:All referenced brands,product names,service names and trademarks are the property of their respective owners.10.Contact informationFor additional information, please visit:For sales office addresses, send an email to:salesaddresses@Document status [1][2]Product status [3]DefinitionObjective [short] data sheet Development This document contains data from the objective specification for product development.Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.Product [short] data sheetProductionThis document contains the product specification.11.Contents1Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 11.1General description. . . . . . . . . . . . . . . . . . . . . . 11.2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4Quick reference data. . . . . . . . . . . . . . . . . . . . . 12Pinning information. . . . . . . . . . . . . . . . . . . . . . 13Ordering information. . . . . . . . . . . . . . . . . . . . . 24Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 25Thermal characteristics. . . . . . . . . . . . . . . . . . . 56Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 67Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 98Revision history. . . . . . . . . . . . . . . . . . . . . . . . 109Legal information. . . . . . . . . . . . . . . . . . . . . . . 119.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . 119.2Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 119.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 119.4T rademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 1110Contact information. . . . . . . . . . . . . . . . . . . . . 1111Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.© NXP B.V.2007.All rights reserved.For more information, please visit: For sales office addresses, please send an email to: salesaddresses@Date of release: 6 August 2007Document identifier: BT151-1000RT_1。

试用期小结尊敬的江苏三恒科技集团领导：您好！我叫程克辉，毕业于西北师范大学知行学院，电子信息工程专业。

在试用期的两个多月里，我在工程中心软件项目部实习工作，我很荣幸，能跟着***副总经理学习与专业相关的电子知识，收获不少！这两个多月在任总的指导下，我成功的了解、计算了：BT151可控硅、LM2940（1安恒流调节器）、LM317三端可调正稳压器集成电路、LM2674电源高效降压稳压转换器、13F-11网络隔离变压器、光耦开关、继电器、SC50462红外遥控发射模块、SM3XX0/3XX1红外接收头等电子元器件。

在任总的指导下和上面的学习我跟着任总学习“煤矿防爆显示系统”的电路设计、模块学习，也成功的用c语言成功的编写控制该系统的c程序，由于公司没有人用c对红外解码程序的编写，故在任总的悉心指导下,几经努力终于编写成功并且能稳定的通过硬件的测试。

硬件部分：1、外部12V电源转换成5V模块。

由LM2674器件实现2、外部1A恒流源模块。

由LM317和LM2940实现3、五个独立按键控制继电器模块。

由光耦开关实现4、继电器动作模块。

5、红外接收模块。

由SM3XX0/3XX1红外接收头实现6、外部的四路光端机、视频转换器、光缆传输、摄像头、画面分割器、网络视频等模块试用期的期间，由于刚来啥器件都没有，每每遇到困难的时候我就及时向***主任汇报，在张主任积极帮助下我的问题往往能很快的得到解决。

特别感谢张主任的无私支持和关怀！在红外线解码的c程序设计上，我面临着很大的困难，在学校根本就没有接触过红外线的解码，因为红外线是一种看不到摸不着的东西，且我们公司的红外线发射器用的是杭州士兰电子的器件很特殊。

它没有引导码只有16位的用户码和按键的数据码，这样写出来的c 解码程序就很容易受到外部红外线的干扰。

在程序初始化和有红外脉冲时能接收16位的0脉冲，即使解码出错也能有00H的码进入。

还好最后在我用数码管把红外线解出来的码显示出来，这样一切问题就迎刃而解了！程序能成功调试并通过硬件测试。

Thyristors BTA151 seriessensitive gateGENERAL DESCRIPTIONQUICK REFERENCE DATAGlass passivated,sensitive gate SYMBOL PARAMETERMAX.MAX.MAX.UNIT thyristors in a plastic envelope,intended for use in general purpose BTA151-500R 650R 800R switching and phase control V DRM ,Repetitive peak off-state 500650800V applications.V RRM voltagesI T(AV)Average on-state current 7.57.57.5A I T(RMS)RMS on-state current121212A I TSMNon-repetitive peak on-state 100100100AcurrentPINNING - SOT82PIN CONFIGURATION SYMBOLLIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT -500R -650R -800R V DRM , V RRM Repetitive peak off-state-50016501800V voltages I T(AV)Average on-state current half sine wave; T mb ≤ 109 ˚C -7.5A I T(RMS)RMS on-state current all conduction angles-12A I TSMNon-repetitive peak half sine wave; T j = 25 ˚C prior to on-state currentsurge t = 10 ms -100A t = 8.3 ms -110A I 2t I 2t for fusingt = 10 ms-50A 2s dI T /dt Repetitive rate of rise of I TM = 20 A; I G = 50 mA;-50A/µs on-state current after dI G /dt = 50 mA/µstriggeringI GM Peak gate current -2A V GM Peak gate voltage-5V V RGM Peak reverse gate voltage -12V P GM Peak gate power -5W P G(AV)Average gate power over any 20 ms period -0.5W T stg Storage temperature -40150˚C T jOperating junction -125˚Ctemperature1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs.THERMAL RESISTANCESSYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNIT R th j-mb Thermal resistance-- 1.3K/W junction to mounting base R th j-aThermal resistance in free air -60-K/Wjunction to ambientSTATIC CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNIT I GT Gate trigger current V D = 12 V; I T = 0.1 A -24mA I L Latching current V D = 12 V; I GT = 0.1 A -1040mA I H Holding current V D = 12 V; I GT = 0.1 A -716mA V T On-state voltage I T = 23 A- 1.4 1.75V V GT Gate trigger voltage V D = 12 V; I T = 0.1 A-0.6 1.5V V D = V DRM(max); I T = 0.1 A; T j = 125 ˚C 0.250.4-V I D , I ROff-state leakage currentV D = V DRM(max); V R = V RRM(max); T j = 125 ˚C-0.10.5mADYNAMIC CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNITdV D /dtCritical rate of rise of V D = 67% V DRM(max); T j = 125 ˚C;off-state voltage exponential waveformGate open circuit50130-V/µs R GK = 100 Ω2001000-V/µs t gt Gate controlled turn-on I TM = 40 A; V D = V DRM ; I G = 0.1 A;-2-µs timedI G /dt = 5 A/µst qCircuit commutated V D = 67% V DRM(max); I TM = 20 A; V R = 25 V;-70-µsturn-off timedI TM /dt = 30 A/µs; dV D /dt = 50 V/µs;R GK = 100 ΩMECHANICAL DATA1. Refer to mounting instructions for SOT82 envelopes.2. Epoxy meets UL94 V0 at 1/8".DEFINITIONSData sheet statusObjective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application informationWhere application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1997All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.。

序号产品型号电流电压触发电流封装形式1 BTA02-600 2A 600V TO-922 BTA03-600 2A 600V TO-126/ML3 BTN03-600 2A 600V TO-126/ML4 BTA16600B 16A 600V 35~50mA TO-220AB/FP5 BTF06-800 6A 800V 5~10mA TO-220AB/FP6 MCR100-6 1A 600V 10~30uA TO-927 MCR100-8 1A 800V 10~30uA TO-928 2P4M 2A 400V 10~30uA TO-2029 2P6M 2A 600V 10~30uA TO-20210 JCT05 5A 600V 5~10mA TO-202AB11 BT151 8A 600V 5~10mA TO-220AB12 BT169 1A 600V 10~50uA TO-9213 CT10 10A 600V 8~15mA TO-220AB/FP14 CT12 12A 600V 8~15mA TO-220AB/FP15 CT16 16A 600V 8~15mA TO-220AB/FP16 CT20 20A 600V 10~20mA TO-220AB/FP17 MAC97A6 1A 400V 1~5mA TO-9218 MAC97A8 1A 600V 1~5mA TO-9219 MAC223A6 1A 400V 50mA TO-220AB20 MAC223A8 1A 600V 50mA TO-220AB21 MAC223A8X 1A 600V 50mA SOT186A22 BT131-400D 1A 400V 1~5mA TO-9223 BT131-400E 1A 400V 5~10mA TO-9224 BT131-600D 1A 600V 1~5mA TO-9225 BT131-600E 1A 400V 5~10mA TO-9226 BT132-400D 1A 400V 1~5mA TO-9227 BT132-400E 1A 400V 5~10mA TO-92序号产品型号电流电压触发电流封装形式28 BT132-600D 1A 600V 1~5mA TO-9229 BT132-600E 1A 400V 5~10mA TO-9230 BT134-400D 4A 400V 1~5mA TO-126ML31 BT134-400E 4A 600V 5~10mA TO-126ML32 BT134-600D 4A 600V 1~5mA TO-126ML33 BT134-600E 4A 600V 5~10mA TO-126ML34 BT134-600D 4A 600V 1~5mA SOT8235 BT134-600E 4A 600V 5~10mA SOT8236 BT134-800D 4A 800V 1~5mA SOT8237 BT134-800E 4A 800V 5~10mA SOT8238 BT136-400D 4A 400V 1~5mA TO-220AB39 BT136-400E 4A 400V 5~10mA TO-220AB40 BT136-600D 4A 600V 1~5mA TO-220AB41 BT136-600E 4A 600V 5~10mA TO-220AB42 BT136-800D 4A 800V 1~5mA TO-220AB43 BT136-800E 4A 800V 5~10mA TO-220AB44 BT137-400D 8A 400V 1~5mA TO-220AB45 BT137-400E 8A 400V 5~10mA TO-220AB46 BT137-600D 8A 600V 1~5mA TO-220AB47 BT137-600E 8A 600V 5~10mA TO-220AB48 BT137-800D 8A 800V 1~5mA TO-220AB49 BT137-800E 8A 800V 5~10mA TO-220AB50 BT137X-600 8A 600V 35mA TO-220FP51 BT137X-600D 8A 600V 5mA TO-220FP52 BT137X-600F 8A 600V 25mA TO-220FP53 BT137X-800 8A 800V 35mA TO-220FP54 BT137X-600E 8A 600V 10mA TO-220FP序号产品型号电流电压触发电流封装形式55 BT137X-800E 8A 600V 10mA TO-220FP56 BT137-600F 8A 600V 25mA TO-220AB57 BT137-600D 8A 600V 5mA TO-220AB58 BT137-600E 8A 600V 10mA TO-220AB59 BT137-800E 8A 600V 10mA TO-220AB60 BT137-600F 8A 600V 25mA TO-220AB61 BT138-400D 12A 400V 1~5mA TO-220AB62 BT138-400E 12A 400V 5~10mA TO-220AB63 BT138-600D 12A 600V 1~5mA TO-220AB64 BT138-600E 12A 600V 5~10mA TO-220AB65 BT138-600F 12A 600V 25mA TO-220AB66 BT138-800D 12A 800V 1~5mA TO-220AB67 BT138-800E 12A 800V 5~10mA TO-220AB68 BT138-800F 12A 800V 25mA TO-220AB69 BT138X-600 12A 600V 35mA TO-220FP70 BT138X-600F 12A 600V 25mA TO-220FP71 BT138X-800 12A 800V 35mA TO-220FP72 BT138X-800F 12A 800V 25mA TO-220FP73 BT139X-600 16A 600V 35mA TO-220FP74 BT139X-600F 16A 600V 25mA TO-220FP75 BT139X-800 16A 800V 35mA TO-220FP76 BT139-600 16A 600V 35mA TO-220AB77 BT139-600F 16A 600V 25mA TO-220AB78 BT139-800 16A 800V 35mA TO-220AB79 BT139-800F 16A 800V 25mA TO-220AB80 BT139-800G 16A 800V 50m TO-220AB81 BT139-600F 16A 600V 25mA TO-220AB序号产品型号电流电压触发电流封装形式82 BT139-600G 16A 600V 50m TO-220AB83 BT139-600D 16A 600V 1~5mA TO-220AB84 BT139-600E 16A 600V 5~10mA TO-220AB85 BT139-800D 16A 800V 1~5mA TO-220AB86 BT139-800E 16A 800V 5~10mA TO-220AB87 BT139-800F 16A 800V 25mA TO-220AB88 BT139-800G 16A 800V 50m TO-220AB89 BT151-500R 12A 500V 2~15mA TO-220AB90 BT151-650R 12A 650V 2~15mA TO-220AB91 BT151-800R 12A 800V 2~15mA TO-220AB92 BT152 20A 800V 32mA TO-220AB93 BTA140-600 25A 600V 35mA TO-220AB94 BTA140-800 25A 800V 35mA TO-220AB95 BTA140B-500 25A 500V 35mA SOT-40496 BTA140B-600 25A 600V 35mA SOT-40497 BTA140B-800 25A 800V 35mA SOT-40498 BT145-800R 25A 800V 35mA TO-220AB99 BT148W-600R 1A 600V 0.2mA SOT223 100 BT148-400R 4A 400V 0.2mA SOT82 101 BT148-500R 4A 500V 0.2mA SOT82 102 BT148-600R 4A 600V 0.2mA SOT82 103 BT150-500R 4A 500V 0.2mA TO-220AB 104 BT150S-600R 4A 600V 0.2mA TO-252/D-PAK 105 BTA151-650R 12A 650V 4mA SOT82 106 BT151-500R 12A 500V 15mA TO-220AB 107 BT151-650R 12A 650V 15mA TO-220AB 108 BT151-800R 9A 800V 15mA TO-220AB序号产品型号电流电压触发电流封装形式109 BT151X-500R 12A 500V 15mA TO-220FP 110 BT151X-650R 12A 650V 15mA TO-220FP 111 BT151X-800R 12A 800V 15mA TO-220FP 112 BT151S-500R 12A 500V 15mA TO-252/D-PAK 113 BT151S-650R 12A 650V 15mA TO-252/D-PAK 114 BT151S-800R 12A 800V 15mA TO-252/D-PAK 115 BT151B-500R 12A 500V 15mA TO-263/D2-PAK 116 BT151B-650R 12A 650V 15mA TO-263/D2-PAK 117 BT151B-800R 12A 800V 15mA TO-263/D2-PAK 118 BT151F-500R 9A 500V 15mA SOT-186 119 BT152-400R 20A 400V 32mA TO-220AB 120 BT152-600R 20A 600V 32mA TO-220AB 121 BT152-800R 20A 800V 32mA TO-220AB 122 BT152X-400R 20A 400V 32mA TO-220FP 123 BT152X-600R 20A 600V 32mA TO-220FP 124 BT152X-800R 20A 800V 32mA TO-220FP 125 BT152B-400R 20A 400V 32mA TO-263/D2-PAK 126 BT152B-600R 20A 600V 32mA TO-263/D2-PAK 127 BT152B-800R 20A 800V 32mA TO-263/D2-PAK 128 BTA204-600D 4A 600V 5mA TO-220AB 129 BTA204-600E 4A 600V 10mA TO-220AB 130 BTA204-600F 4A 600V 25mA TO-220AB 131 BTA204-800E 4A 800V 10mA TO-220AB 132 BTA204-600B 4A 600V 50mA TO-220AB 133 BTA204-600C 4A 600V 35mA TO-220AB 134 BTA204S-600B 4A 600V 50mA TO-252/D-PAK 135 BTA204S-600C 4A 600V 35mA TO-252/D-PAK序号产品型号电流电压触发电流封装形式136 BTA204S-600D 4A 600V 5mA TO-252/D-PAK 137 BTA204S-600E 4A 600V 10mA TO-252/D-PAK 138 BTA204S-600F 4A 600V 25mA TO-252/D-PAK 139 BTA204W-600D 1A 600V 5mA SOT223 140 BTA204W-600E 1A 600V 10mA SOT223 141 BTA204W-600F 1A 600V 25mA SOT223 142 BTA204W-600B 1A 600V 50mA SOT223 143 BTA204W-600C 1A 600V 35mA SOT223 144 BTA204X-600D 4A 600V 5mA TO-220FP 145 BTA204X-600E 4A 600V 10mA TO-220FP 146 BTA204X-600F 4A 600V 25mA TO-220FP 147 BTA208X-600D 8A 600V 5mA TO-220FP 148 BTA208X-600E 8A 600V 10mA TO-220FP 149 BTA208X-600F 8A 600V 25mA TO-220FP 150 BTA208X-800E 8A 800V 10mA TO-220FP 151 BTA208-600D 8A 600V 5mA TO-220AB 152 BTA208-600E 8A 600V 10mA TO-220AB 153 BTA208-600F 8A 600V 25mA TO-220AB 154 BTA208-600B 8A 600V 50mA TO-220AB 155 BTA208-800B 8A 800V 50mA TO-220AB 156 BTA208S-600B 8A 600V 50mA TO-252/D-PAK 157 BTA208S-800B 8A 800V 50mA TO-252/D-PAK 158 BTA208S-600D 8A 600V 5mA TO-252/D-PAK 159 BTA208S-600E 8A 600V 10mA TO-252/D-PAK 160 BTA208S-600F 8A 600V 25mA TO-252/D-PAK 161 BTA208B-500B 8A 500V 50mA SOT-404 162 BTA208B-600B 8A 600V 50mA SOT-404序号产品型号电流电压触发电流封装形式163 BTA208B-800B 8A 800V 50mA SOT-404 164 BTA212X-600B 12A 600V 50mA TO-220FP 165 BTA212X-800B 12A 800V 50mA TO-220FP 166 BTA212X-600D 12A 600V 5mA TO-220FP 167 BTA212X-600E 12A 600V 10mA TO-220FP 168 BTA212X-600F 12A 600V 25mA TO-220FP 169 BTA212X-800E 12A 800V 10mA TO-220FP 170 BTA212X-600B 12A 600V 50mA TO-220FP 171 BTA212X-800B 12A 800V 50mA TO-220FP 172 BTA216X-600B 16A 600V 50mA TO-220FP 173 BTA216X-800B 16A 800V 50mA TO-220FP 174 BTA216X-600D 16A 600V 5mA TO-220FP 175 BTA216X-600E 16A 600V 10mA TO-220FP 176 BTA216X-600F 16A 600V 25mA TO-220FP 177 BTA216-600B 16A 600V 50mA TO-220AB 178 BTA216-800B 16A 800V 50mA TO-220AB 179 BTA216-600D 16A 600V 5mA TO-220AB 180 BTA216-600E 16A 600V 10mA TO-220AB 181 BTA216-600F 16A 600V 25mA TO-220AB 182 BTA225-600B 25A 600V 50mA TO-220AB 183 BTA225-800B 25A 800V 50mA TO-220AB 184 BTA225B-600B 25A 600V 50mA TO-263/D2-PAK 185 BTA225B-800B 25A 800V 50mA TO-263/D2-PAK 186 BT258U-600R 8A 600V 0.2mA SOT533/(I-PAK) 187 BT300-600R 8A 600V 15mA TO-220AB 188 BT300S-600R 8A 600V 15mA TO-252/D-PAK 189 BTA04-400B 4A 400V 35~50mA TO-220序号产品型号电流电压触发电流封装形式190 BTA04-400BW 4A 400V 50mA TO-220 191 BTA04-400C 4A 400V 25mA TO-220 192 BTA04-400CW 4A 400V 35mA TO-220 193 BTA04-400SW 4A 400V 10mA TO-220 194 BTA04-400TW 4A 400V 5mA TO-220 195 BTA04-400E 4A 400V 5~10mA TO-220 196 BTA04-400D 4A 400V 1~5mA TO-220 197 BTA04-400SAP 4A 400V 5~10mA TO-220 198 BTA04-600B 4A 600V 35~50mA TO-220 199 BTA04-600BW 4A 600V 50mA TO-220AB 200 BTA04-600C 4A 600V 25mA TO-220AB 201 BTA04-600CW 4A 600V 35mA TO-220AB 202 BTA04-600SW 4A 600V 10mA TO-220AB 203 BTA04-600TW 4A 600V 5mA TO-220AB 204 BTA04-600E 4A 600V 5~10mA TO-220AB 205 BTA04-600D 4A 600V 1~5mA TO-220AB 206 BTA04-600SAP 4A 600V 5~10mA TO-220AB 207 BTA04-700B 4A 700V 35~50mA TO-220AB 208 BTA04-700BW 4A 700V 50mA TO-220AB 209 BTA04-700C 4A 700V 25mA TO-220AB 210 BTA04-700CW 4A 700V 35mA TO-220AB 211 BTA04-700SW 4A 700V 10mA TO-220AB 212 BTA04-700TW 4A 700V 5mA TO-220AB 213 BTA04-700E 4A 700V 5~10mA TO-220AB 214 BTA04-700D 4A 700V 1~5mA TO-220AB 215 BTA04-700SAP 4A 700V 5~10mA TO-220AB 216 BTA04-800B 4A 800V 35~50mA TO-220AB序号产品型号电流电压触发电流封装形式217 BTA04-800BW 4A 800V 50mA TO-220AB 218 BTA04-800C 4A 800V 25mA TO-220AB 219 BTA04-800CW 4A 800V 35mA TO-220AB 220 BTA04-800SW 4A 800V 10mA TO-220AB 221 BTA04-800TW 4A 800V 5mA TO-220AB 222 BTA04-800E 4A 800V 5~10mA TO-220AB 223 BTA04-800D 4A 800V 1~5mA TO-220AB 224 BTA04-800SAP 4A 800V 5~10mA TO-220AB 225 BTB04-400B 4A 400V 35~50mA TO-220AB 226 BTB04-400BW 4A 400V 50mA TO-220AB 227 BTB04-400C 4A 400V 25mA TO-220AB 228 BTB04-400CW 4A 400V 35mA TO-220AB 229 BTB04-400SW 4A 400V 10mA TO-220AB 230 BTB04-400TW 4A 400V 5mA TO-220AB 231 BTB04-400E 4A 400V 5~10mA TO-220AB 232 BTB04-400D 4A 400V 1~5mA TO-220AB 233 BTB04-400SAP 4A 400V 5~10mA TO-220AB 234 BTB04-600B 4A 600V 35~50mA TO-220AB 235 BTB04-600BW 4A 600V 50mA TO-220AB 236 BTB04-600C 4A 600V 25mA TO-220AB 237 BTB04-600CW 4A 600V 35mA TO-220AB 238 BTB04-600SW 4A 600V 10mA TO-220AB 239 BTB04-600TW 4A 600V 5mA TO-220AB 240 BTB04-600E 4A 600V 5~10mA TO-220AB 241 BTB04-600D 4A 600V 1~5mA TO-220AB 242 BTB04-600SAP 4A 600V 5~10mA TO-220AB 243 BTB04-700B 4A 700V 35~50mA TO-220AB序号产品型号电流电压触发电流封装形式244 BTB04-700BW 4A 700V 50mA TO-220AB 245 BTB04-700C 4A 700V 25mA TO-220AB 246 BTB04-700CW 4A 700V 35mA TO-220AB 247 BTB04-700SW 4A 700V 10mA TO-220AB 248 BTB04-700TW 4A 700V 5mA TO-220AB 249 BTB04-700E 4A 700V 5~10mA TO-220AB 250 BTB04-700D 4A 700V 1~5mA TO-220AB 251 BTB04-700SAP 4A 700V 5~10mA TO-220AB 252 BTB04-800B 4A 800V 35~50mA TO-220AB 253 BTB04-800BW 4A 800V 50mA TO-220AB 254 BTB04-800C 4A 800V 25mA TO-220AB 255 BTB04-800CW 4A 800V 35mA TO-220AB 256 BTB04-800SW 4A 800V 10mA TO-220AB 257 BTB04-800TW 4A 800V 5mA TO-220AB 258 BTB04-800E 4A 800V 5~10mA TO-220AB 259 BTB04-800D 4A 800V 1~5mA TO-220AB 260 BTB04-800SAP 4A 800V 5~10mA TO-220 261 BTA06-400B 6A 400V 35~50mA TO-220AB 262 BTA06-400BW 6A 400V 50mA TO-220AB 263 BTA06-400C 6A 400V 25mA TO-220AB 264 BTA06-400CW 6A 400V 35mA TO-220AB 265 BTA06-400TW 6A 400V 5mA TO-220AB 266 BTA06-400E 6A 400V 5~10mA TO-220AB 267 BTA06-400D 6A 400V 1~5mA TO-220AB 268 BTA06-400SAP 6A 400V 5~10mA TO-220 269 BTA06-600B 6A 600V 35~50mA TO-220AB 270 BTA06-600BW 6A 600V 50mA TO-220AB序号产品型号电流电压触发电流封装形式271 BTA06-600C 6A 600V 25mA TO-220AB 272 BTA06-600CW 6A 600V 35mA TO-220A 273 BTA06-600SW 6A 600V 10mA TO-220AB 274 BTA06-600TW 6A 600V 5mA TO-220AB 275 BTA06-600E 6A 600V 5~10mA TO-220AB 276 BTA06-600D 6A 600V 1~5mA TO-220AB 277 BTA06-600SAP 6A 600V 5~10mA TO-220AB 278 BTA06-700B 6A 700V 35~50mA TO-220AB 279 BTA06-700BW 6A 700V 50mA TO-220AB 280 BTA06-700C 6A 700V 25mA TO-220AB 281 BTA06-700CW 6A 700V 35mA TO-220AB 282 BTA06-700SW 6A 700V 10mA TO-220AB 283 BTA06-700TW 6A 700V 5mA TO-220AB 284 BTA06-700E 6A 700V 5~10mA TO-220AB 285 BTA06-700D 6A 700V 1~5mA TO-220AB 286 BTA06-700SAP 6A 700V 5~10mA TO-220AB 287 BTA06-800B 6A 800V 35~50mA TO-220AB 288 BTA06-800BW 6A 800V 50mA TO-220AB 289 BTA06-800C 6A 800V 25mA TO-220AB 290 BTA06-800CW 6A 800V 35mA TO-220AB 291 BTA06-800SW 6A 800V 10mA TO-220AB 292 BTA06-800TW 6A 800V 5mA TO-220AB 293 BTA06-800E 6A 800V 5~10mA TO-220AB 294 BTA06-800D 6A 800V 1~5mA TO-220AB 295 BTA06-800SAP 6A 800V 5~10mA TO-220AB 296 BTB06-400B 6A 400V 35~50mA TO-220A 297 BTB06-400BW 6A 400V 50mA TO-220AB序号产品型号电流电压触发电流封装形式298 BTB06-400C 6A 400V 25mA TO-220AB 299 BTB06-400CW 6A 400V 35mA TO-220AB 300 BTB06-400SW 6A 400V 10mA TO-220AB 301 BTB06-400TW 6A 400V 5mA TO-220AB 302 BTB06-400E 6A 400V 5~10mA TO-220AB 303 BTB06-400D 6A 400V 1~5mA TO-220AB 304 BTB06-400SAP 6A 400V 5~10mA TO-220AB 305 BTB06-600B 6A 600V 35~50mA TO-220A 306 BTB06-600BW 6A 600V 50mA TO-220AB 307 BTB06-600C 6A 600V 25mA TO-220AB 308 BTB06-600CW 6A 600V 35mA TO-220AB 309 BTB06-600SW 6A 600V 10mA TO-220AB 310 BTB06-600TW 6A 600V 5mA TO-220AB 311 BTB06-600E 6A 600V 5~10mA TO-220 312 BTB06-600D 6A 600V 1~5mA TO-220AB 313 BTB06-600SAP 6A 600V 5~10mA TO-220AB 314 BTB06-700B 6A 700V 35~50mA TO-220AB 315 BTB06-700BW 6A 700V 50mA TO-220AB 316 BTB06-700C 6A 700V 25mA TO-220AB 317 BTB06-700CW 6A 700V 35mA TO-220AB 318 BTB06-700SW 6A 700V 10mA TO-220AB 319 BTB06-700TW 6A 700V 5mA TO-220AB 320 BTB06-700E 6A 700V 5~10mA TO-220AB 321 BTB06-700D 6A 700V 1~5mA TO-220AB 322 BTB06-700SAP 6A 700V 5~10mA TO-220AB 323 BTB06-800B 6A 800V 35~50mA TO-220AB 324 BTB06-800BW 6A 800V 50mA TO-220AB序号产品型号电流电压触发电流封装形式325 BTB06-800C 6A 800V 25mA TO-220AB 326 BTB06-800CW 6A 800V 35mA TO-220AB 327 BTB06-800SW 6A 800V 10mA TO-220AB 328 BTB06-800TW 6A 800V 5mA TO-220AB 329 BTB06-800E 6A 800V 5~10mA TO-220AB 330 BTB06-800D 6A 800V 1~5mA TO-220AB 331 BTB06-800SAP 6A 800V 5~10mA TO-220AB 332 BTA08-400B 8A 400V 35~50mA TO-220AB 333 BTA08-400BW 8A 400V 50mA TO-220AB 334 BTA08-400C 8A 400V 25mA TO-220AB 335 BTA08-400CW 8A 400V 35mA TO-220AB 336 BTA08-400SW 8A 400V 10mA TO-220AB 337 BTA08-400TW 8A 400V 5mA TO-220AB 338 BTA08-400E 8A 400V 5~10mA TO-220AB 339 BTA08-400D 8A 400V 1~5mA TO-220AB 340 BTA08-400SAP 8A 400V 5~10mA TO-220AB 341 BTA08-600B 8A 600V 35~50mA TO-220AB 342 BTA08-600BW 8A 600V 50mA TO-220AB 343 BTA08-600C 8A 600V 25mA TO-220AB 344 BTA08-600CW 8A 600V 35mA TO-220AB 345 BTA08-600SW 8A 600V 10mA TO-220AB 346 BTA08-600TW 8A 600V 5mA TO-220AB 347 BTA08-600E 8A 600V 5~10mA TO-220AB 348 BTA08-600D 8A 600V 1~5mA TO-220AB 349 BTA08-600SAP 8A 600V 5~10mA TO-220AB 350 BTA08-700B 8A 700V 35~50mA TO-220AB 351 BTA08-700BW 8A 700V 50mA TO-220AB序号产品型号电流电压触发电流封装形式352 BTA08-700C 8A 700V 25mA TO-220AB 353 BTA08-700CW 8A 700V 35mA TO-220AB 354BTA08-700SW8A700V10mA TO-220AB 355BTA08-700TW8A700V5mA TO-220AB 356BTA08-700E8A700V5~10mA TO-220AB 357BTA08-700D8A700V1~5mA TO-220AB 358BTA08-700SAP8A700V5~10mA TO-220AB 359BTA08-800B8A800V35~50mA TO-220AB 360BTA08-800BW8A800V50mA TO-220AB 361BTA08-800C8A800V25mA TO-220AB 362BTA08-800CW8A800V35mA TO-220AB 363BTA08-800SW8A800V10mA TO-220AB 364BTA08-800TW8A800V5mA TO-220AB 365BTA08-800E8A800V5~10mA TO-220AB 366BTA08-800D8A800V1~5mA TO-220AB 367BTA08-800SAP8A800V5~10mA TO-220A 368BTA08-1000B8A1000V35~50mA TO-220AB 369BTA08-1000BW8A1000V50mA TO-220AB 370BTA08-1000C8A1000V25mA TO-220AB 371BTA08-1000CW8A1000V35mA TO-220AB 372BTA08-1000SW8A1000V10mA TO-220AB 373BTA08-1000TW8A1000V5mA TO-220AB 374BTA08-1000E8A1000V5~10mA TO-220AB 375BTA08-1000D8A1000V1~5mA TO-220AB 376BTA08-1000SAP8A1000V5~10mA TO-220AB 377BTB08-400B8A400V35~50mA TO-220AB 378BTB08-400BW8A400V50mA TO-220AB序号产品型号电流电压触发电流封装形式379BTB08-400C8A400V25mA TO-220AB 380BTB08-400CW8A400V35mA TO-220AB 381BTB08-400SW8A400V10mA TO-220AB 382BTB08-400TW8A400V5mA TO-220AB 383BTB08-400E8A400V5~10mA TO-220A 384BTB08-400D8A400V1~5mA TO-220AB 385BTB08-400SAP8A400V5~10mA TO-220AB 386BTB08-600B8A600V35~50mA TO-220A 387BTB08-600BW8A600V50mA TO-220AB 388BTB08-600C8A600V25mA TO-220AB 389BTB08-600CW8A600V35mA TO-220AB 390BTB08-600SW8A600V10mA TO-220AB 391BTB08-600TW8A600V5mA TO-220AB 392BTB08-600E8A600V5~10mA TO-220AB 393BTB08-600D8A600V1~5mA TO-220AB 394BTB08-600SAP8A600V5~10mA TO-220AB 395BTA10-400B10A400V35~50mA TO-220AB 396BTA12-400B12A400V35~50mA TO-220AB 397BTA16-400B16A400V35~50mA TO-220AB 398BTA20-400B20A400V35~50mA TO-220AB 399BTA24-600B25A600V35~50mA TO-220AB 400BTA25-600B25A600V35~50mA TO-220AB 401BTA25-600BW25A600V50mA TO-220AB 402BTA26-600B25A600V35~50mA TO-220AB 403BTA40-600B40A600V35~50mA BTW67 404BTA40-600BW40A600V50mA BTW67 405BTA41-600B40A600V35~50mA BTW67序号产品型号电流电压触发电流封装形式406BTA41-600BW40A600V50mA BTW67 407HBT131A1A600V3~7mA TO-92 408HBT131CA1A600V3~5mA TO-92 409HBT131GA1A800V3~5mA TO-92 410HBT134CI4A600V5~10mA TO-251 411HBT134DI4A600V5~10mA TO-251 412HBT134GI4A800V5~10mA TO-251 413HBT134HI4A600V5~10mA TO-251 414HBT134NE4A600V10~25mA SOT-82 415HBT134I4A600V10~25mA TO-251 416HBT134CNE4A600V5~10mA SOT-82 417HBT134DNE4A600V5~10mA SOT-82 418HBT134GNE4A800V5~10mA SOT-82 419HBT134HNE4A800V5~10mA SOT-82 420HBT136AE4A600V10mA TO-220AB 421HBT204I4A600V10mA TO-251 422HBT204E4A600V15mA TO-220AB 423HBT136AE4A600V10~25mA TO-220AB 424HBT136AHE4A600V5~10mA TO-220AB 425HBT136BE6A600V10~25mA TO-220AB 426HBT137E8A600V10~25mA TO-220AB 427HBT137DE8A600V25mA TO-220AB 428HBT138E8A600V10~25mA TO-220AB 429HBT15220A800V32mA TO-220AB 430HBT1690.8A400V200uA TO-92 431HBT169M0.8A400V200uA SOT-89。

基于可控硅BT151的逆变桥电路模块以及可靠关断研究作者：李秋梅来源：《电脑知识与技术》2017年第12期摘要：可控硅BTl51是一种新型的半导体器件，它具有体积小、质量轻、效率高、寿命长、动作快以及使用方便等优点。

目前，在交流调压器的调压、建材工业自动控制系统以及玻璃厂自动配料系统对电子秤给料机的控制等许多系统中大都采用可控硅控制。

但是可控硅的可靠关断问题一直困扰着人们，该文介绍一种采用可控硅BTl51作为主要器件来实现直流电到大功率方波电流信号的转变模块，并对其可靠关断问题进行了分析。

关键词：可控硅；逆变模块；可靠关断当前，逆变电路的设计中主要采用可控硅或者IGBT模块进行设计，IGBT模块主要用于与大功率的场合，而且可靠性较高，控制方便，但是其价格比较昂贵。

而可控硅一般应用在较小功率场合，其可靠关断问题一直是其应用中的主要问题，一般在应用时采用H桥的方式进行设计，为了防止H桥单臂发生直通现象，在设计中需要进行死区时间设计或延时控制。

本文介绍一种以可控硅BTl51为主要器件，实现直流电到大功率方波信号的逆变模块，对其中可能发生的直通问题进行了分析，设计了一种特殊的触发信号，模块通过实验，实现了可靠关断，并通过设计，模块可以根据需要输出多频复合信号。

1总体硬件框图以及逆变桥电路模块的原理及其实现总体硬件框图如图1。

逆变模块电路原理图如图2，各元件的参数设置如图中所示。

其中电容Cl和C2、电感，J1的值是在触发信号频率在0.5HZ、1 HZ、2 HZ、4 HZ、8 HZ、16 HZ、32 HZ、64 HZ、128 HZ变化以及电流在24时，通过实验对每组电容、电感的值可以通过频率的带宽而得到最合适的一组。

电容的值为47uF，电感的值为8.5mH。

逆变模块设计目的是：控制逆变桥的两对桥臂上的晶闸管轮流导通，从而在负载R1上产生大功率的方波电流信号。

其工作原理是：可控硅q1和q4的有共同的控制信号，这对桥臂同时导通和关断。

Philips SemiconductorsProduct specificationThyristors BT151S seriesBT151M seriesGENERAL DESCRIPTIONQUICK REFERENCE DATAGlass passivated thyristors in a plastic SYMBOL PARAMETERMAX.MAX.MAX.UNIT envelope,suitable for surface mounting,intended for use in BT151S (or BT151M)-500R 650R 800R applications requiring high V DRM ,Repetitive peak off-state 500650800V bidirectional blocking voltage V RRM voltagescapability and high thermal cycling I T(AV)Average on-state current 7.57.57.5A performance.Typical applications I T(RMS)RMS on-state current121212A include motor control,industrial and I TSMNon-repetitive peak on-state 100100100Adomestic lighting,heating and static currentswitching.PINNING - SOT428PIN CONFIGURATIONSYMBOLLIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT -500R -650R -800R V DRM , V RRM Repetitive peak off-state-50016501800V voltages I T(AV)Average on-state current half sine wave; T mb ≤ 103 ˚C-7.5A I T(RMS)RMS on-state current all conduction angles-12A I TSMNon-repetitive peak half sine wave; T j = 25 ˚C prior to on-state currentsurge t = 10 ms -100A t = 8.3 ms -110A I 2t I 2t for fusingt = 10 ms-50A 2s dI T /dt Repetitive rate of rise of I TM = 20 A; I G = 50 mA;-50A/µs on-state current after dI G /dt = 50 mA/µstriggeringI GM Peak gate current -2A V GM Peak gate voltage-5V V RGM Peak reverse gate voltage -5V P GM Peak gate power -5W P G(AV)Average gate power over any 20 ms period -0.5W T stg Storage temperature -40150˚C T jOperating junction -125˚Ctemperature1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs.查询BT151S-500R供应商THERMAL RESISTANCESSYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNIT R th j-mb Thermal resistance-- 1.8K/W junction to mounting base R th j-aThermal resistance pcb (FR4) mounted; footprint as in Fig.14-75-K/Wjunction to ambientSTATIC CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNIT I GT Gate trigger current V D = 12 V; I T = 0.1 A -215mA I L Latching current V D = 12 V; I GT = 0.1 A -1040mA I H Holding current V D = 12 V; I GT = 0.1 A -720mA V T On-state voltage I T = 23 A- 1.4 1.75V V GT Gate trigger voltage V D = 12 V; I T = 0.1 A-0.6 1.5V V D = V DRM(max); I T = 0.1 A; T j = 125 ˚C 0.250.4-V I D , I ROff-state leakage currentV D = V DRM(max); V R = V RRM(max); T j = 125 ˚C-0.10.5mADYNAMIC CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNITdV D /dtCritical rate of rise of V DM = 67% V DRM(max); T j = 125 ˚C;off-state voltage exponential waveform;Gate open circuit50130-V/µs R GK = 100 Ω2001000-V/µs t gt Gate controlled turn-on I TM = 40 A; V D = V DRM(max); I G = 0.1 A;-2-µs timedI G /dt = 5 A/µst qCircuit commutated V D = 67% V DRM(max); T j = 125 ˚C;-70-µsturn-off timeI TM = 20 A; V R = 25 V; dI TM /dt = 30 A/µs;dV D /dt = 50 V/µs; R GK = 100 ΩMECHANICAL DATAMOUNTING INSTRUCTIONSNotes1. Plastic meets UL94 V0 at 1/8".DEFINITIONSData sheet statusObjective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application informationWhere application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1997All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.Copyright © Each Manufacturing Company.All Datasheets cannot be modified without permission.This datasheet has been download from :100% Free DataSheet Search Site.Free Download.No Register.Fast Search System.。