ZXT2M322TA;中文规格书,Datasheet资料

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SUMMARY

VCEO= 20V;RSAT= 64m;IC= -3.5A

DESCRIPTION

Packagedintheinnovative2mmx2mmMLP(MicroLeadedPackage)outline,

thisnew4thgenerationlowsaturationtransistorsoffersextremelylowonstate

lossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpower

management functions.

Additionally users will also gain several otherkey benefits:

Performance capability equivalent to much larger packages

Improved circuit efficiency & power levels

Lower package height (nom 0.9mm)

PCB area and device placement savings

Reduced component count

FEATURES

•Low Equivalent On Resistance

•Extremely Low Saturation Voltage(-220mV @-1A)

•hFEcharacterised up to -6A

•IC= -3.5A Continuous Collector Current

•2mm x 2mmMLP

APPLICATIONS

•DC - DC Converters (FET Drivers)

•Charging Circuits

•Power switches

•Motor control

ORDERING INFORMATION

DEVICE MARKING

S2ZXT2M322

ISSUE 3 - JANUARY 2007

1MPPS™

Miniature Package Power Solutions20V PNP LOW SATURATION SWITCHING TRANSISTOR

2mm x 2mm SingleMLP

underside viewPINOUTDEVICEREELTAPE

WIDTHQUANTITY

PERREEL

ZXT2M322TA7؅؅8mm3000

ZXT2M322TC13؅؅8mm

100002mm x 2mmMLP

(single die)

http://oneic.com/ZXT2M322

ISSUE 3 - JANUARY 2007

2PARAMETERSYMBOLVALUEUNIT

JunctiontoAmbient(a)RθJA83°C/W

JunctiontoAmbient(b)RθJA51°C/W

JunctiontoAmbient(d)RθJA125°C/W

JunctiontoAmbient(e)RθJA42°C/WTHERMAL RESISTANCE

NOTES

(a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditionswith all exposed pads attached.

(b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at tр5 secswith all exposed padsattached.

(d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditionswith minimal lead connections only.

(e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditionswith all exposed pads attached.

(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown inthe package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight isRth=300°C/W giving a power rating ofPtot=420mW.PARAMETERSYMBOLLIMITUNIT

Collector-BaseVoltageVCBO-25V

Collector-EmitterVoltageVCEO-20V

Emitter-BaseVoltageVEBO-7.5V

PeakPulseCurrent(c)ICM-6A

ContinuousCollectorCurrent(a)IC-3.5A

BaseCurrentIB-1000mA

PowerDissipationatTA=25°C(a)

LinearDeratingFactorPD1.5

12W

mW/°C

PowerDissipationatTA=25°C(b)

LinearDeratingFactorPD2.45

19.6W

mW/°C

PowerDissipationatTA=25°C(d)

LinearDeratingFactorPD1

mW/°C

PowerDissipationatTA=25°C(e)

LinearDeratingFactorPD3

24W

mW/°C

OperatingandStorageTemperatureRangeTj:Tstg-55 to +150°CABSOLUTE MAXIMUM RATINGS.

http://oneic.com/ZXT2M322

ISSUE 3 - JANUARY 2007

0.11100.010.1110

02550751001251500.00.51.01.52.02.53.03.5

100µ1m10m100m1101001k020406080

0.11101000255075100125150175200225

0.11101000.00.51.01.52.02.53.03.5100us100ms1sVCE(SAT)Limited

1ms

SafeOperatingAreaSinglePulse,Tamb=25°CDC

10ms

ICCollectorCurrent(A)

VCECollector-EmitterVoltage(V)1ozCu

Note:a2ozCu

Note:e

DeratingCurveTamb=25°C

MaxPowerDissipation(W)

Temperature(°C)

D=0.2D=0.5

D=0.1

TransientThermalImpedanceSinglePulse

D=0.05

ThermalResistance(°C/W)

PulseWidth(s)

ThermalResistancevBoardArea1ozcopper

2ozcopperThermalResistance(°C/W)

BoardCuArea(sqcm)

1ozcopper2ozcopper

PowerDissipationvBoardAreaTamb=25°C

Tjmax=150°C

Continuous

PDDissipation(W)

BoardCuArea(sqcm)CHARACTERISTICSCHARACTERISTICS

http://oneic.com/ZXT2M322

ISSUE 3 - JANUARY 2007

4PARAMETERSYMBOLMIN.TYP.MAX.UNITCONDITIONS.

Collector-BaseBreakdown

VoltageV(BR)CBO-25-35VIC=-100␮A

Collector-EmitterBreakdown

VoltageV(BR)CEO-20-25VIC=-10mA*

Emitter-BaseBreakdownVoltageV(BR)EBO-7.5-8.5VIE=-100␮A

CollectorCut-OffCurrentICBO-25nAVCB=-20V

EmitterCut-OffCurrentIEBO-25nAVEB=-6V

CollectorEmitterCut-OffCurrentICES-25nAVCES=-16V

Collector-EmitterSaturation

VoltageVCE(sat)-19

-170

-190

-240

-225-30

-220

-250

-350

-300mV

mVIC=-0.1A,IB=-10mA*

IC=-1A,IB=-20mA*

IC=-1.5A,IB=-50mA*

IC=-2.5A,IB=-150mA*

IC=-3.5A,IB=-350mA*

Base-EmitterSaturationVoltageVBE(sat)-1.01-1.075VIC=-3.5A,IB=-350mA*

Base-EmitterTurn-OnVoltageVBE(on)-0.87-0.95VIC=-3.5A,VCE=-2V*

StaticForwardCurrentTransfer

RatiohFE300

300

150

15475

450

230

30IC=-10mA,VCE=-2V*

IC=-0.1A,VCE=-2V*

IC=-2A,VCE=-2V*

IC=-6A,VCE=-2V*

TransitionFrequencyfT150180MHzIC=-50mA,VCE=-10V

f=100MHz

OutputCapacitanceCobo2130pFVCB=-10V,f=1MHz

Turn-OnTimet(on)40nsVCC=-10V,IC=-1A

IB1=IB2=10mATurn-OffTimet(off)670nsELECTRICAL CHARACTERISTICS(atTamb= 25°C unless otherwise stated).

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle≤2%

http://oneic.com/

ZNI1000TA;ZNI1000TC;中文规格书,Datasheet资料

Issue 5 - June

Temperature sensor

Description

The ZNI1000 is a Ni thin film Resistance Temperature Detector (RTD),specified to DIN 43760. The high temperature coefficient offers highersignal outputs than other RTD's, which results in higher accuracy withsmaller temperature changes.

Features

•Resistance at 0°C: 1000

•Nickel temperature detector

•Specified to DIN 43760

•SOT23 package

Applications

•Automotive electronic

•Circuit protection

•Temperature compensation

•Temperature measurement

Ordering informationDeviceReel size(inches)Tape width(mm)Quantityper reelDevice marking

ZNI1000TA783,000ZNI

ZNI1000TC13810,000

ZNI31

Pinout - top view

Pin 1 - Ni1000Pin 2 - Ni1000Pin 3 - Need a goodthermal contact forshort response time

/ZNI1000

2N7002TA;2N7002TC;中文规格书,Datasheet资料

Issue 5 - October

60V SOT23 N-channel enhancement mode MOSFET

Summary

Description

A small signal MOSFET for general purpose switching applications.

Features

•Fast switching speed

•Low gate drive capability

•SOT23 package

Applications

•General switching applications

Ordering information

Device marking

702V(BR)DSSRDS(on) (⍀)ID (A)

607.5 @ VGS= 10V0.5

7.5 @ VGS= 5V0.05

DeviceReel size (inches)Tape width

(mm)Quantity per reel

2N700278

3,000D

Top viewS

/2N7002

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

NOTES:(a)Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.(b)Sample test.(c)Switching times measured with 50⍀ source impedance and <5ns rise time on a pulse generatorSpice parameter data is available upon request for this device.ParameterSymbolLimitUnit

FMMT618TA;FMMT618TC;中文规格书,Datasheet资料

A Product Line ofDiodes IncorporatedFMMT618 20V NPN SILICON LOW SATURATION TRANSISTOR IN SOT-23 Features • VCEO = 20V • IC = 2.5A • 625mW Power dissipation • Low Equivalent On Resistance • Low Saturation Voltage • hFE characterised up to 6.0A • “Lead Free”, RoHS Compliant (Note 1) • Halogen and Antimony Free, “Green” Devices (Note 2) Mechanical Data • Case: SOT-23 • Case material: “Green” molding Compound. (Note 2) • UL Flammability Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish • Weight: 0.008 grams (Approximate) Applications • DC-DC Modules • Gate driver • LED driver Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel FMMT618TA 618 7 8mm embossed 3000 units Notes: 1. No purposefully added lead. 2. Devices with the PID number starting from PID0155145 are ‘Green’ products. Halogen and Antimony Free. Diodes Inc.‘s “Green” Policy can be found on our website at https:/// 3. For packaging details, go to our website at . Marking Information 618 = Product Type Marking Code SOT-23 Device Symbol Top View Pin Configuration 618/

FMMT734TA;FMMT734TC;中文规格书,Datasheet资料

“SUPER SOT” SOT23 PNP SILICON POWER DARLINGTON TRANSISTORISSUE 1 – AUGUST 1997FEATURES*625mW POWER DISSIPATION*Very High hFE at High Current (5A)*Extremely Low VCE(sat) at High Current (1A)COMPLEMENTARY TYPE – FMMT634PARTMARKING DETAIL – 734ABSOLUTE MAXIMUM RATINGS.PARAMETERSYMBOLVALUEUNITCollector-Base VoltageVCBO-100VCollector-Emitter VoltageVCEO-100VEmitter-Base VoltageVEBO-12VPeak Pulse CurrentICM-5AContinuous Collector CurrentIC-800mAPower DissipationPtot625mWOperating and Storage Temperature RangeTj:Tstg-55 to +150°C*Maximum power dissipation is calculated assuming that the device is mounted on a ceramicsubstrate measuring 15x15x0.6mm**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤

2%CBE

SOT23FMMT734

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETERSYMBOLMIN.TYP.MAX.UNITCONDITIONS.Collector-BaseBreakdown VoltageV(BR)CBO-100-130VIC=-100µACollector-EmitterBreakdown VoltageV(BR)CEO-100-116VIC=-5mA*Emitter-BaseBreakdown VoltageV(BR)EBO-12-17VIE=-100µACollector Cut-OffCurrentICBO-10nAVCB=-80VEmitter Cut-OffCurrentIEBO-10nAVEB=-7VCollector EmitterCut-Off CurrentICES-200nAVCES=-80VCollector-EmitterSaturation VoltageVCE(sat)-0.68-0.72-0.78-0.86-0.72-0.90-0.75-0.80-0.86-0.97—-1.05VVVVVVIC=-100mA, IB=-1mA*IC=-250mA,IB=-1mA*IC=-500mA, IB=-5mA*IC=-800mA, IB=-5mA*IC=-800mA, IB=-5mA †*IC=-1A, IB=-5mA*Base-Emitter Saturation VoltageVBE(sat)-1.60-1.75VIC=-1A, IB=-5mA*Base-EmitterTurn-On VoltageVBE(on)-1.30-1.75VIC=-1A, VCE=-5V*Static ForwardCurrent Transfer RatiohFE20K15K5K60K60K50K15K15020KIC=-10mA, VCE=-5V*IC=-100mA, VCE=-5V*IC=-1A, VCE=-5V*IC=-2A, VCE=-5V*IC=-5A, VCE=-5V*IC=-1A, VCE=-2V*TransitionFrequencyfT140MHzIC=-10mA, VCE=-10Vf=100MHzOutput CapacitanceCobo1425pFVCB=-10V, f=1MHzTurn-On Timet(on)460nsIC=-500mA, VCC=-20VIB=±1mATurn-Off Timet(off)1200ns*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%† Tamb=150°CFMMT734

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ZXT2M322TA;中文规格书,Datasheet资料

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