TC4422AVOA;TC4421AVOA;TC4421AVPA;TC4422AVPA;TC4422AVMF;中文规格书,Datasheet资料

SymbolTyp Max 31405975R θJL 1624Maximum Junction-to-Lead CSteady-State°C/WThermal Characteristics ParameterUnits Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W °C/W Maximum Junction-to-Ambient A Steady-State AO4422SymbolMin TypMaxUnits BV DSS 30V 1T J =55°C5I GSS 100nA V GS(th)1 1.83V I D(ON)40A 12.615T J =125°C16.82119.624m Ωg FS 25S V SD 0.751V I S4.3A C iss 1040pF C oss 180pF C rss 110pF R g 0.7ΩQ g (10V)19.8nC Q g (4.5V)9.8nC Q gs 2.5nC Q gd 3.5nC t D(on) 4.5ns t r 3.9ns t D(off)17.4ns t f 3.2ns t rr 17.5ns Q rr 7.6nCBody Diode Reverse Recovery Time Body Diode Reverse Recovery ChargeI F =11A, dI/dt=100A/µsDrain-Source Breakdown Voltage On state drain currentI D =250µA, V GS =0V V GS =4.5V, V DS =5V V GS =10V, I D =11AReverse Transfer Capacitance I F =11A, dI/dt=100A/µs Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditions I DSS µA Gate Threshold Voltage V DS =V GS I D =250µA V DS =24V, V GS =0VV DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current R DS(ON)Static Drain-Source On-ResistanceForward Transconductance Diode Forward Voltage m ΩV GS =4.5V, I D =10AI S =1A,V GS =0V V DS =5V, I D =11A Total Gate Charge Gate Source Charge Gate resistance V GS =0V, V DS =0V, f=1MHzTurn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =15V, R L =1.35Ω, R GEN =3ΩTurn-Off Fall Time Maximum Body-Diode Continuous CurrentInput Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS V GS =10V, V DS =15V, I D =11ATotal Gate Charge Gate Drain Charge V GS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS A: The value of R θJA is measured with the device mounted on 1in 2FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.。

MIC4421A/4422A9A Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS ProcessMicrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel +1 (408) 944-0800 • fax + 1 (408) 474-1000 • General DescriptionMIC4421A and MIC4422A MOSFET drivers are rugged, efficient, and easy to use. The MIC4421A is an inverting driver, while the MIC4422A is a non-inverting driver.Both versions are capable of 9A (peak) output and can drive the largest MOSFETs with an improved safe operating margin. The MIC4421A/4422A accepts any logic input from 2.4V to V S without external speed-up capacitors or resistor networks. Proprietary circuits allow the input to swing negative by as much as 5V without damaging the part. Additional circuits protect against damage from electrostatic discharge.MIC4421A/4422A drivers can replace three or more discrete components, reducing PCB area requirements, simplifying product design, and reducing assembly cost. Modern Bipolar/CMOS/DMOS construction guarantees freedom from latch-up. The rail-to-rail swing capability of CMOS/DMOS insures adequate gate voltage to the MOSFET during power up/down sequencing. Since these devices are fabricated on a self-aligned process, they have very low crossover current, run cool, use little power, and are easy to drive.Data sheets and support documentation can be found on Micrel’s web site at: .Features• High peak-output current: 9A Peak (typ.) • Wide operating range: 4.5V to 18V (typ.) • Minimum pulse width: 50ns• Latch-up proof: fully isolated process is inherently immune to any latch-up• Input will withstand negative swing of up to 5V • High capacitive load drive: 47,000pF • Low delay time: 15ns (typ.)• Logic high input for any voltage from 2.4V to V S • Low equivalent input capacitance: 7pF (typ.) • Low supply current: 500µA (typ.)• Output voltage swing to within 25mV of GND or V SApplications• Switch mode power supplies • Motor controls• Pulse transformer driver • Class-D switching amplifiers • Line drivers• Driving MOSFET or IGBT parallel chip modules • Local power ON/OFF switch • Pulse generators___________________________________________________________________________________________________________Typical ApplicationLoad V S +15V* Siliconix 30m, 7A max.† Load voltage limited by MOSFET drain-to-source ratingLow-Side Power SwitchOrdering InformationPart NumberStandard Pb-Free Configuration Temperature RangePackage MIC4421AAM*Inverting –55° to +125°C 8-Pin SOIC MIC4421ABM MIC4421AYM Inverting –40° to +85°C8-Pin SOIC MIC4421ACM MIC4421AZM Inverting0° to +70°C 8-Pin SOIC MIC4421ABN MIC4421AYN Inverting –40° to +85°C 8-Pin PDIP MIC4421ACN MIC4421AZN Inverting 0° to +70°C 8-Pin PDIP MIC4421ACT MIC4421AZTInverting 0° to +70°C 5-Pin TO-220 MIC4422AAM*Non-Inverting –55° to +125°C 8-Pin SOIC MIC4422ABM MIC4422AYM Non-Inverting –40° to +85°C 8-Pin SOIC MIC4422ACM MIC4422AZM Non-Inverting 0° to +70°C 8-Pin SOIC MIC4422ABN MIC4422AYN Non-Inverting –40° to +85°C 8-Pin PDIP MIC4422ACN MIC4422AZN Non-Inverting 0° to +70°C 8-Pin PDIP MIC4422ACTMIC4422AZTNon-Inverting0° to +70°C5-Pin TO-220* Special order. Contact factory.Pin ConfigurationVSOUT OUT GNDVS IN NC GND5OUT 4GND 3VS 2GND 1IN8-Pin PDIP (N) 8-Pin SOIC (M)5-Pin TO-220 (T)Pin DescriptionPin Number DIP, SOICPin Number TO-220-5 Pin NamePin Name2 1 IN Control Input.4, 5 2, 4 GND Ground: Duplicate pins must be externally connected together.1, 8 3, TAB VS Supply Input: Duplicate pins must be externally connected together.6, 75OUTOutput: Duplicate pins must be externally connected together.3 — NC Not connected.Absolute Maximum Ratings(1)Supply Voltage (V S)......................................................+20V Control Input Voltage (V IN)..............V S + 0.3V to GND – 5V Control Input Current (V IN > V S)..................................50mA Power Dissipation, T A < +25°C(4)PDIP(θJA)........................................................1478mW SOIC(θJA)..........................................................767mW TO-220(θJA)........................................................1756W Lead Temperature (soldering, #sec.).........................300°C Storage Temperature (T s).........................–65°C to +150°C ESD Rating(3)..................................................................2kV Operating Ratings(2)Supply Voltage (V S).......................................+4.5V to +18V Ambient Temperature (T A)AVersion............................................–55°C to +125°C BVersion..............................................–40°C to +85°CC Version..................................................0°C to +70°C Junction Temperature (T J).........................................150°C Package Thermal Resistance(4)PDIP(θJA).......................................................84.6°C/W SOIC(θJA).....................................................163.0°C/W TO-220(θJA)....................................................71.2°C/W PDIP(θJC).......................................................41.2°C/W SOIC(θJC).......................................................38.8°C/W TO-220(θJC).....................................................6.5°C/WElectrical CharacteristicsT A = 25°C with 4.5V ≤ V S≤ 18V, bold values indicate –55°C< T A < +125°C, unless noted.Symbol Parameter Condition Min Typ Max Units Power SupplyV S Operating Input Voltage 4.5 18 VHigh Output Quiescent Current V IN = 3V (MIC4422A), V IN = 0 (MIC4421A) 0.5 1.53mA mAI SLow Output Quiescent Current V IN = 0V (MIC4422A), V IN = 3V (MIC4421A) 50 150200µA µAInputV IH Logic 1 Input Voltage See Figure 3 3.0 2.1 V V IL Logic 0 Input Voltage See Figure 3 1.5 0.8 VV IN InputVoltageRange –5 V S+0.3 VI IN InputCurrent 0V≤ V IN≤ V S–10 10 µAOutputV OH High Output Voltage See Figure 1 V S+.025 V V OL Low Output Voltage See Figure 1 0.025 VOutput Resistance, Output High I OUT = 10mA, V S = 18V 0.6 1.03.6ΩΩR OOutput Resistance, Output Low I OUT = 10mA, V S = 18V 0.8 1.72.7ΩΩI PK Peak Output Current V S = 18V (See Figure 8) 9 A I DC Continuous Output Current 2 AI R Latch-Up ProtectionWithstand Reverse Current Duty Cycle ≤ 2%t ≤ 300µs, Note 5>1500 mASwitching Time (Note 5)t R Rise Time Test Figure 1, C L = 10,000pF 20 75120ns nst F Fall Time Test Figure 1, C L = 10,000pF 24 75120ns nst D1Delay Time Test Figure 1 15 6880ns nsSymbol ParameterCondition Min Typ Max Units Switching Time (Note 5) continued t D2 Delay TimeTest Figure 135 60 80 ns ns t PW Minimum Input Pulse Width See Figure 1 and Figure 2. 50ns f maxMaximum Input FrequencySee Figure 1 and Figure 2.1MHzNotes:1. Exceeding the absolute maximum rating may damage the device.2. The device is not guaranteed to function outside its operating rating.3. Devices are ESD sensitive. Handling precautions recommended. Human body model, 1.5k in series with 100pF.4. Minimum footprint.5. Guaranteed by design.Test Circuit90%10%10%0V 5VV S OUTPUTINPUT90%0V90%10%10%0V 5V V OUTPUTINPUT90%0VFigure 1. Inverting Driver Switching Time Figure 2. Non-Inverting Driver Switching TimeControl Input BehaviorLogic 1Logic 0SFigure 3. Input HysteresisTypical CharacteristicsTypical Characteristics (continued)Functional DiagramINVSGND Figure 4. MIC4421A/22A Block DiagramFunctional DescriptionRefer to the functional diagram.The MIC4422A is a non-inverting driver. A logic high on the IN produces gate drive output. The MIC4421A is an inverting driver. A logic low on the IN produces gate drive output. The output is used to turn on an external N-channel MOSFET.SupplyV S (supply) is rated for +4.5V to +18V. External capacitors are recommended to decouple noise.InputIN (control) is a TTL-compatible input. IN must be forced high or low by an external signal. A floating input will cause unpredictable operation.A high input turns on Q1, which sinks the output of the0.1mA and the 0.3mA current source, forcing the input of the first inverter low.HysteresisThe control threshold voltage, when IN is rising, is slightly higher than the control threshold voltage when CTL is falling.When IN is low, Q2 is on, which applies the additional 0.3mA current source to Q1. Forcing IN high turns on Q1 which must sink 0.4mA from the two current sources. The higher current through Q1 causes a larger drain-to-source voltage drop across Q1. A slightly higher control voltage is required to pull the input of the first inverter down to its threshold.Q2 turns off after the first inverter output goes high. This reduces the current through Q1 to 0.1mA. The lower current reduces the drain-to-source voltage drop across Q1. A slightly lower control voltage will pull the input of the first inverter up to its threshold.DriversThe second (optional) inverter permits the driver to be manufactured in inverting and non-inverting versions. The last inverter functions as a driver for the output MOSFETs Q3 and Q4.OutputOUT is designed to drive a capacitive load. V OUT (output voltage) is either approximately the supply voltage or approximately ground, depending on the logic state applied to IN.If IN is high, and V S (supply) drops to zero, the output will be floating (unpredictable).Application InformationSupply BypassingCharging and discharging large capacitive loads quickly requires large currents. For example, charging a 10,000pF load to 18V in 50ns requires 3.6A.The MIC4421A/4422A has double bonding on the supply pins, the ground pins and output pins. This reduces parasitic lead inductance. Low inductance enables large currents to be switched rapidly. It also reduces internal ringing that can cause voltage breakdown when the driver is operated at or near the maximum rated voltage. Internal ringing can also cause output oscillation due to feedback. This feedback is added to the input signal since it is referenced to the same ground.V SØ1 Drive Signal Conduction Angle Control 0°C to 180°C Conduction Angle Control 180°C to 360°CFigure 5. Direct Motor DriveTo guarantee low supply impedance over a wide frequency range, a parallel capacitor combination is recommended for supply bypassing. Low inductance ceramic disk capacitor swith short lead lengths (< 0.5 inch) should be used. A 1µF low ESR film capacitor in parallel with two 0.1µF low ESR ceramic capacitors, (such as AVX RAM Guard ®), provides adequate bypassing. Connect one ceramic capacitor directly between pins 1 and 4. Connect the second ceramic capacitor directly between pins 8 and 5.GroundingThe high current capability of the MIC4421A/4422A demands careful PC board layout for best performance. Since the MIC4421A is an inverting driver, any ground lead impedance will appear as negative feedback which can degrade switching speed. Feedback is especially noticeable with slow-rise time inputs. The MIC4421A input structure includes about 600mV of hysteresis to ensure clean transitions and freedom from oscillation, but attention to layout is still recommended.Figure 7 shows the feedback effect in detail. As the MIC4421A input begins to go positive, the output goes negative and several amperes of current flow in the ground lead. As little as 0.05Ω of PC trace resistance can produce hundreds of millivolts at the MIC4421A ground pins. If the driving logic is referenced to power ground, the effective logic input level is reduced and oscillation may result.To insure optimum performance, separate ground traces should be provided for the logic and power connections. Connecting the logic ground directly to the MIC4421A GND pins will ensure full logic drive to the input and ensure fast output switching. Both of the MIC4421A GND pins should, however, still be connected to power ground.V IN1N4448mA V O L T SOutput Voltage 050100150200250300350Figure 6. Self Contained Voltage DoublerInput StageThe input voltage level of the MIC4421A changes the quiescent supply current. The N-Channel MOSFET input stage transistor drives a 320µA current source load. With a logic “1” input, the quiescent supply current is typically500µA. Logic “0” input level signals reduce quiescent current to 80µA typical.The MIC4421A/4422A input is designed to provide 600mV of hysteresis. This provides clean transitions, reduces noise sensitivity, and minimizes output stage current spiking when changing states. Input voltage threshold level is approximately 1.5V, making the device TTL compatible over the full temperature and operating supply voltage ranges. Input current is less than ±10µA. The MIC4421A can be directly driven by the TL494, SG1526/1527, SG1524, TSC170, MIC38C42, and similar switch mode power supply integrated circuits. By off loading the power-driving duties to the MIC4421A/ 4422A, the power supply controller can operate at lower dissipation. This can improve performance and reliability. The input can be greater than the V S supply, however, current will flow into the input lead. The input currents can be as high as 30mA p-p (6.4mARMS) with the input. No damage will occur to MIC4421A/4422A however, and it will not latch.The input appears as a 7pF capacitance and does not change even if the input is driven from an AC source. While the device will operate and no damage will occur up to 25V below the negative rail, input current will increase up to 1mA/V due to the clamping action of the input, ESD diode, and 1kΩ resistor.Power DissipationCMOS circuits usually permit the user to ignore power dissipation. Logic families such as 4000 and 74C have outputs which can only supply a few milliamperes of current, and even shorting outputs to ground will not force enough current to destroy the device. The MIC4421A/4422A on the other hand, can source or sink several amperes and drive large capacitive loads at high frequency. The package power dissipation limit can easily be exceeded. Therefore, some attention should be given to power dissipation when driving low impedance loads and/or operating at high frequency.V IN+18VFigure 7. Switching Time Due to Negative FeedbackThe supply current vs. frequency and supply current vs. capacitive load characteristic curves aid in determining power dissipation calculations. Table 1 lists the maximum safe operating frequency for several power supply voltages when driving a 10,000pF load. More accurate power dissipation figures can be obtained by summing the three dissipation sources.Given the power dissipation in the device, and the thermal resistance of the package, junction operating temperature for any ambient is easy to calculate. For example, the thermal resistance of the 8-pin plastic DIP package, from the data sheet, is 84.6°C/W. In a 25°C ambient, then, using a maximum junction temperature of 150°C, this package will dissipate 1478mW.Accurate power dissipation numbers can be obtained by summing the three sources of power dissipation in the device:•Load Power Dissipation (PL)•Quiescent power dissipation (PQ)•Transition power dissipation (PT)Calculation of load power dissipation differs depending on whether the load is capacitive, resistive or inductive. Resistive Load Power DissipationDissipation caused by a resistive load can be calculated as:P L = I2 R O Dwhere:I = the current drawn by the loadR O = the output resistance of the driver whenthe output is high, at the power supplyvoltage used. (See data sheet)D =fraction of time the load is conducting(duty cycle).Table 1. MIC4421A Maximum Operating FrequencyV S Max Frequency18V 220kHz15V 300kHz 10V 640kHz 5V 2MHz Conditions: 1. θJA = 150°C/W 2. T A = 25°C3. C L = 10,000pFCapacitive Load Power Dissipation Dissipation caused by a capacitive load is simply the energy placed in, or removed from, the load capacitanceby the driver. The energy stored in a capacitor isdescribed by the equation: E = 1/2 C V 2As this energy is lost in the driver each time the load ischarged or discharged, for power dissipation calculationsthe 1/2 is removed. This equation also shows that it isgood practice not to place more voltage in the capacitorthan is necessary, as dissipation increases as thesquare of the voltage applied to the capacitor. For adriver with a capacitive load: PL = f C (VS)2where:f = Operating FrequencyC = Load CapacitanceVS =Driver Supply VoltageInductive Load Power DissipationFor inductive loads the situation is more complicated. For the part of the cycle in which the driver is actively forcing current into the inductor, the situation is the same as it is in the resistive case: P L1 = I 2 R O DHowever, in this instance the R O required may be either the on-resistance of the driver when its output is in the high state, or its on-resistance when the driver is in the low state, depending on how the inductor is connected, and this is still only half the story. For the part of the cycle when the inductor is forcing current through the driver, dissipation is best described as: P L2 = I V D (1 – D)where V D is the forward drop of the clamp diode in the driver (generally around 0.7V). The two parts of the load dissipation must be summed in to produce P L : P L = P L1 + P L2Quiescent Power DissipationQuiescent power dissipation (PQ, as described in the input section) depends on whether the input is high or low. A low input will result in a maximum current drain(per driver) of ≤0.2mA; a logic high will result in a current drain of ≤3.0mA. Quiescent power can therefore be found from:P Q = V S [D I H + (1 – D) I L ] where: I H = Quiescent current with input highI L = Quiescent current with input lowD = Fraction of time input is high (duty cycle) V S = Power supply voltage Transition Power Dissipation Transition power is dissipated in the driver each time itsoutput changes state, because during the transition, for a very brief interval, both the N- and P-Channel MOSFETs in the output totem-pole are ON simultaneously, and a current is conducted through them from V S to ground. The transition power dissipation is approximately: P T = 2 f V S (A•s) where (A•s) is a time-current factor derived from thetypical characteristic curve “Crossover Energy vs. Supply Voltage.” Total power (P D ) then, as previously described is just: P D = P L + P Q + P T DefinitionsC L = Load Capacitance in Farads.D = Duty Cycle expressed as the fraction of timethe input to the driver is high.f = Operating Frequency of the driver in Hertz. I H = Power supply current drawn by a driverwhen both inputs are high and neither output is loaded.I L = Power supply current drawn by a driverwhen both inputs are low and neither output is loaded.I D = Output current from a driver in Amps.P D = Total power dissipated in a driver in Watts. P L = Power dissipated in the driver due to thedriver’s load in Watts.P Q = Power dissipated in a quiescent driver inWatts.P T = Power dissipated in a driver when the output changes states (“shoot-through current”) inWatts. NOTE: The “shoot-through” currentfrom a dual transition (once up, once down)for both drivers is stated in Figure 7 inampere-nanoseconds. This figure must bemultiplied by the number of repetitions persecond (frequency) to find Watts.R O = Output resistance of a driver in Ohms.V S = Power supply voltage to the IC in Volts.+18VFigure 8. Peak Output Current Test CircuitPackage InformationPIN 1DIMENSIONS:INCH (MM)8-Pin Plastic DIP (N)8-Pin SOIC (M)5-Pin TO-220 (T)。

单片式18V优先级排序器提供低待机电流后备电池
切换解决方案
2016 年9 月 1 日&ndash; 凌力尔特公司（Linear Technology CorporaTIon）推出适用于1.8V 至18V 系统的双输入单片式电源优先级排序器LTC4420。

为了实现便携性、在欠压期间保持存储器运作、以及在电源缺失时确保平稳的停机，电子系统采用电池和电容器作为后备电源。

LTC4420 一般使用墙上适配器或电池等较高优先级主电源来给负载供电，并在主电源欠压或电源缺失的情况下切换至后备电源（通常是一个电池或大数值电容器）。

由于能在高达18V 的输入电压下工作，因此LTC4420 可适应多种电源，例如：墙上适配器、USB 端口、超级电容器、以及采用堆叠式锂离子、碱性或镍氢（NiMH）电池。

通过把器件工作电流减小至3.6&micro;A 和把后备电源的待机电流消耗降至很低的0.32&micro;A，LTC4420 延长了便携式电池供电型系统中的运行时间。

与其他解决方案不同，LTC4420 并不要求后备电源电压低于主电源电压。

当后备电源电压高于主电源电压时，优先级排序器是比简单的二极管合路器更好的解决方案，因为优先级排序器不必从电压最高的电源吸收电流。

当主电源电压降至低于可调的切换门限时，内部500mA （最小值）电流限制开关从主电源多路复用至后备电源。

谨慎设计的先断后连快速开关控制可隔离反向和交叉传导电流，同时最大限度地减少输出电压降。

为了减小静态电流，后备电源的阻性分压器连接至一个选通地，并具有一个可调到低。

EL4421C 22C 41C 42C 43C 44CJanuary1996RevC Note All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication however this data sheet cannot be a‘‘controlled document’’ Current revisions if any to these specifications are maintained at the factory and are available upon your request We recommend checking the revision level before finalization of your design documentation1994Elantec IncFeaturesUnity or a2-gain bandwidth of80MHz70dB off-channel isolation at4MHzDirectly drives high-impedanceor75X loads02%and 02 differential gainand phase errors8ns switching timek100mV switching glitch0 2%loaded gain errorCompatible with g3V to g15Vsupplies160mW maximum dissipation atg5V suppliesOrdering InformationPart No Temp Range Package OutlineEL4421CN b40 C to a85 C8-Pin PDIP MDP0031EL4421CS b40 C to a85 C8-Pin SO MDP0027EL4422CN b40 C to a85 C8-Pin PDIP MDP0031EL4422CS b40 C to a85 C8-Pin SO MDP0027EL4441CN b40 C to a85 C14-Pin PDIP MDP0031EL4441CS b40 C to a85 C14-Pin SO MDP0027EL4442CN b40 C to a85 C14-Pin PDIP MDP0031EL4442CS b40 C to a85 C14-Pin SO MDP0027EL4443CN b40 C to a85 C14-Pin PDIP MDP0031EL4443CS b40 C to a85 C14-Pin SO MDP0027EL4444CN b40 C to a85 C14-Pin PDIP MDP0031EL4444CS b40 C to a85 C14-Pin SO MDP0027General DescriptionThe EL44XX family of video multiplexed-amplifiers offers avery quick8ns switching time and low glitch along with verylow video distortion The amplifiers have good gain accuracyeven when driving low-impedance loads To save power the am-plifiers do not require heavy loading to remain stableThe EL4421and EL4422are two-input multiplexed amplifiersThe-inputs of the input stages are wired together and the de-vice can be used as a pin-compatible upgrade from theMAX453The EL4441and EL4442have four inputs also with commonfeedback These may be used as upgrades of the MAX454The EL4443and EL4444are also4-input multiplexed amplifi-ers but both positive and negative inputs are wired separatelyA wide variety of gain-and phase-switching circuits can be builtusing independent feedback paths for each channelThe EL4421 EL4441 and EL4443are internally compensatedfor unity-gain operation The EL4422 EL4442 and EL4444arecompensated for gains of a2or more especially useful for driv-ing back-matched cablesThe amplifiers have an operational temperature of b40 C toa85 C and are packaged in plastic8-and14-pin DIP and8-and14-pin SOThe EL44XX multiplexed-amplifier family is fabricated withElantec’s proprietary complementary bipolar process whichgives excellent signal symmetry and is very ruggedConnection DiagramsEL4421 EL44224421–1EL4441 EL44424421–2EL4443 EL44444421–3 Manufactured under U S Patent No 5 352 9872T D i s 3 3 i n34T D i s 2 4 i nTypical Performance Curves ContdV S e g 5V A V e a 1Frequency Response for Various Loads EL4421 EL4441 and EL44434421–9V S e g 5V A V e a 2Frequency Response for Various Loads EL4422 EL4442 and EL44444421–10V S e g 15V A V e a 1for Various LoadsFrequency Response 4421–11V S e g 15V A V e a 2Frequency Response for Various Loads EL4422 EL4442 and EL44444421–12Phase vs Frequency EL4443Open-Loop Gain and 4421–13Phase vs FrequencyEL4444Open-Loop Gain and 4421–375Typical Performance Curves Contdand Peaking vs Supply Voltageb3dB Bandwidth SlewrateEL4421 EL4441 and EL44434421–14and Peaking vs Supply Voltageb3dB Bandwidth SlewrateEL4422 EL4442 and EL44444421–15 vs Temperature A V e a1 R L e500XBandwidth Slewrate and PeakingEL4421 EL4441 and EL44434421–16A V e a2 R L e150X R I e R G e270X C F e3pFSlewrate and Peaking vs TemperatureEL4422 EL4442 and EL4444Bandwidth4421–17 vs Load Resistanceb3dB Bandwidth and Gain ErrorEL4421 EL4441 and EL44434421–18Input Noise vs Frequency4421–196Typical Performance Curves ContdA V e a1 R L e500X F e3 58MHzand Phase Errors vs Input OffsetEL4421 EL4441 and EL4443Differential Gain4421–20A V e a2 R L e150X F e3 58MHzand Phase Error vs Input OffsetEL4422 EL4442 and EL4444Differential Gain4421–21A V e a1 F e3 58MHz V OFFSET e0x0 714Vand Phase Error vs Load ResistanceEL4421 EL4441 and EL4443Differential Gain4421–22vs Load ResistanceEL4443and EL4444Open-Loop Gain4421–23 with Supply VoltageChange in V OS A V and I B4421–24and A V vs TemperatureChange in V OS I B4421–257Typical Performance Curves Contdto Uncorrelated Sinewave and BackSwitching from Grounded Input Switching Waveforms4421–26Switching GlitchChannel-to-Channel 4421–27Feedthrough vs Frequency Unselected ChannelEL4421 EL4441 and EL44434421–28Feedthrough vs FrequencyUnselected ChannelEL4422 EL4442 and EL44444421–29Input and Output Range vsEL4443and EL4444Supply Voltage (Output Unloaded)4421–308Typical Performance Curves ContdSupply VoltageSupply Current vs 4421–31TemperatureSupply Current vs 4421–32Ambient TemperaturePower Dissipation vs 8-Pin Package4421–33Ambient TemperaturePower Dissipation vs 14-Pin Package4421–34Applications Information General DescriptionThe EL44XX family of video mux-amps are com-posed of two or four input stages whose inputs are selected and control an output stage One of the inputs is active at a time and the circuit be-haves as a traditional voltage-feedback op-amp for that input rejecting signals present at the un-selected inputs Selection is controlled by one or two logic inputsThe EL4421 EL4422 EL4441 and EL4442have all b inputs wired in parallel allowing a single feedback network to set the gain of all inputs These devices are wired for positive gains TheEL4443and EL4444 on the other hand have all a inputs and b inputs brought out separately so that the input stage can be wired for independent gains and gain polarities with separate feedback networksThe EL4421 EL4441 and EL4443are compen-sated for unity-gain stability while the EL4422 EL4442 and EL4444are compensated for a fed-back gain of a 2 ideal for driving back-terminat-ed cables or maintaining bandwidth at higher fed-back gains9Applications Information Contd Switching CharacteristicsThe logic inputs work with standard TTL levels of 0 8V or less for a logic 0and 2 0V or more for a logic 1 making them compatible for TTL andCMOS drivers The ground pin is the logic threshold biasing reference The simplified input circuitry is shown below4421–35Figure 1 Simplified Logic Input CircuitryThe ground pin draws a maximum DC current of 6m A and may be biased anywhere between (V b )a 2 5V and (V a )b 3 5V The logic inputs may range from (V b )a 2 5V to V a and are ad-ditionally required to be no more negative thanV(Gnd pin)b 4V and no more positive than V(Gnd pin)a 6VFor example within these constraints we can power the EL44XX’s from a 5V and a 12V with-out a negative supply by using these connections4421–36Figure 2 Using the EL44XX Mux Amps with a 5V and a 12V Supplies10Applications Information ContdThe logic input(s)and ground pin are shifted 2 5V above system ground to correctly bias the mux-amp Of course all the signal inputs and output will have to be shifted2 5V above system ground to ensure proper signal path biasingA final caution the ground pin is also connected to the IC’s substrate and frequency compensation components The ground pin must be returned to system ground by a short wire or nearby bypass capacitor In figure2 the22K X resistors also serve to isolate the bypassed ground pin from the a5V supply noiseSignal AmplitudesSignal input and output voltages must be be-tween(V b)a2 5V and(V a)b2 5V to ensure linearity Additionally the differential voltage on any input stage must be limited to g6V to pre-vent damage In unity-gain connections any in-put could have g3V applied and the output would be at g3V putting us at our6V differen-tial limit Higher-gain circuit applications divide the output voltage and allow for larger outputs For instance at a gain of a2the maximum inputis again g3V and the output swing is g6V The EL4443or EL4444can be wired for inverting gain with even more amplitude possibleThe output and positive inputs respond to over-loading amplitudes correctly that is they simply clamp and remain monotonic with increasinga input overdrive A condition exists howeverwhere the b input of an active stage is overdriven by large outputs This occurs mainly in unity-gain connections and only happens for negative inputs The overloaded input cannot control the feedback loop correctly and the output can be-come non-monotonic A typical scenario has the circuit running on g5V supplies connected for unity gain and the input is the maximum g3V Negative input extremes can cause the output to jump from b3V to around b2 3V This will nev-er happen if the input is restricted to g2 5V which is the guaranteed maximum input compli-ance with g5V supplies and is not a problem with greater supply voltages Connecting the feedback network with a divider will prevent the overloaded output voltage from being large enough to overload the b input and monotonic 11Applications Information Contdbehavior is assured In any event keeping signals within guaranteed compliance limits will assure freedom from overload problemsThe input and output ranges are substantially constant with temperaturePower SuppliesThe mux-amps work well on any supplies from g3V to g15V The supplies may be of different voltages as long as the requirements of the Gnd pin are observed(see the Switching Characteris-tics section for a discussion) The supplies should be bypassed close to the device with short leads 4 7m F tantalum capacitors are very good and no smaller bypasses need be placed in parallel Ca-pacitors as small as0 01m F can be used if small load currents flowSingle-polarity supplies such as a12V with a5V can be used as described in the Switching Characteristics section The inputs and outputs will have to have their levels shifted above ground to accommodate the lack of negative sup-plyThe dissipation of the mux-amps increases with power supply voltage and this must be compati-ble with the package chosen This is a close esti-mate for the dissipation of a circuitP D e2V S c I s max a(V S–V O)c V O R PARWhere I s max is the maximum supply cur-rentV S is the g supply voltage(as-sumed equal)V O if the output voltageR PAR is the parallel of all resistorsloading the outputFor instance the EL4422draws a maximum of 14mA and we might require a2V peak output into150X and a270X a270X feedback divider The R PAR is117X The dissipation with g5V supplies is191mW The maximum Supply volt-age that the device can run on for a given P D and the other parameter isV S max e(P D a V O2 R PAR) 2Is a V O R PAR)The maximum dissipation a package support isP D max e(T D max-T A max) R THWhere T D max is the maximum die temper-ature 150 C for reliability less to re-tain optimum electrical performanceT A max is the ambient temperature70 for commercial and85 C for indus-trial rangeR TH is the thermal resistance of themounted package obtained from datasheet dissipation curvesThe most difficult case is the SO-8package Witha maximum die temperature of150 C and a maxi-mum ambient temperature of85 the65 temper-ature rise and package thermal resistance of 170 W gives a maximum dissipation of382mW This allows a maximum supply voltage of g9 2V for the EL4422operated in our example If the EL4421were driving a light load(R PAR x%) it could operate on g15V supplies at a70 maxi-mum ambientThe EL4441through EL4444can operate on g12V supplies in the SO package and all parts can be powered by g15V supplies in DIP pack-agesOutput LoadingThe output stage of the mux-amp is very power-ful and can source80mA and sink120mA Of course this is too much current to sustain and the part will eventually be destroyed by excessive dissipation or by metal traces on the die opening The metal traces are completely reliable while de-livering the30mA continuous output given in the Absolute Maximum Ratings table in this data sheet or higher purely transient currents Gain or gain accuracy degrades only10%from no load to100X load Heavy resistive loading will degrade frequency response and video distortion only a bit becoming noticeably worse for loads k100X12Applications Information ContdCapacitive loads will cause peaking in the fre-quency response If capacitive loads must be driv-en a small-valued series resistor can be used to isolate it 12X to51X should suffice A22X series resistor will limit peaking to2 5dB with even a 220pF loadInput ConnectionsThe input transistors can be driven from resistive and capacitive sources but are capable of oscilla-tion when presented with an inductive input It takes about80nH of series inductance to make the inputs actually oscillate equivalent to four inches of unshielded wiring or about6 of unter-minated input transmission line The oscillation has a characteristic frequency of500MHzOften simply placing one’s finger(via a metal probe)or an oscilloscope probe on the input will kill the oscillation Normal high-frequency con-struction obviates any such problems where the input source is reasonably close to the mux-amp input If this is not possible one can insert series resistors of around51X to de-Q the inputsFeedback ConnectionsA feedback divider is used to increase circuit gain and some precautions should be observed The first is that parasitic capacitance at the b in-put will add phase lag to the feedback path and increase frequency response peaking or even cause oscillation One solution is to choose feed-back resistors whose parallel value is low The pole frequency of the feedback network should be maintained above at least200MHz For a3pF parasitic this requires that the feedback divider have less than265X impedance equivalent to two510X resistors when a gain of a2is desired Alternatively a small capacitor across R F can be used to create more of a frequency-compensated divider The value of the capacitor should match the parasitic capacitance at the b input It is also practical to place small capacitors across both the feedback resistors(whose values maintain the de-sired gain)to swamp out parasitics For instance two10pF capacitors across equal divider resis-tors will dominate parasitic effects and allow a higher divider resistanceThe other major concern about the divider con-cerns unselected-channel crosstalk The differen-tial input impedance of each input stage isaround200K X The unselected input’s signalsources thus drive current through that input im-pedance into the feedback divider inducing anunwanted output The gain from unselected in-put to output the crosstalk attenuation if R FR IN In unity-gain connection the feedback resis-tor is0X and very little crosstalk is induced Fora gain of a2 the crosstalk is about b60dBFeedthrough AttenuationThe channels have different crosstalk levels withdifferent inputs Here is the typical attenuationfor all combinations of inputs for the mux-ampsat3 58MHzFeedthrough of EL4441and EL4443at3 58MHzIn1In2In3In4InputsSelectA1A000Selected b77dB b90dB b92dB01b80dB Selected b77dB b90dB10b101dB b76dB Selected b66dB11b96dB b84dB b66dB SelectedFeedthrough of EL4421at3 58MHzIn1In2Channel Select0Selected b88dBInput A01b93dB SelectedSwitching GlitchesThe output of the mux-amps produces a small‘‘glitch’’voltage in response to a logic inputchange A peak amplitude of only about90mVoccurs and the transient settles out in20ns Theglitch does not change amplitude with differentgain settingsWith the four-input multiplexers when two logicinputs are simultaneously changed the glitchamplitude doubles The increase can be a avoidedby keeping transitions at least6ns apart Thiscan be accomplished by inserting one gate delayin one of the two logic inputs when they are trulysynchronous13TDis5inTDis5in元器件交易网KNALB14KNALB15E L 4421C 22C 41C 42C J a n u a r y 1996R e v CGeneral DisclaimerSpecifications contained in this data sheet are in effect as of the publication date shown Elantec Inc reserves the right to make changes in the circuitry or specifications contained herein at any time without notice Elantec Inc assumes no responsibility for the use of any circuits described herein and makes no representations that they are free from patent infringementElantec Inc 1996Tarob Court Milpitas CA 95035Telephone (408)945-1323(800)333-6314Fax (408)945-9305European Office 44-71-482-4596WARNING Life Support PolicyElantec Inc products are not authorized for and should not be used within Life Support Systems without the specific written consent of Elantec Inc Life Support systems are equipment in-tended to support or sustain life and whose failure to perform when properly used in accordance with instructions provided can be reasonably expected to result in significant personal injury or death Users contemplating application of Elantec Inc products in Life Support Systems are requested to contact Elantec Inc factory headquarters to establish suitable terms conditions for these applications Elantec Inc ’s warranty is limited to replace-ment of defective components and does not cover injury to per-sons or property or other consequential damagesPrinted in U S A16。

Eaton 199327Eaton Moeller® series NHI Standard auxiliary contact, NHI-E, 1N/O, Can be fitted to the front, Push in terminalsGeneral specificationsEaton Moeller® series NHI AccessoryStandard auxiliary contact199327401508197411535 mm15 mm45 mm0.008 kgRoHS conform CE Marked CSA File No.: 165628CSA Class No.: 3211-05UL File No.: E36332UL Category Control No.: NLRV UL 508CE markingCSA-C22.2 No. 14IEC 60947-4-1ULCSAProduct Name Catalog NumberEANProduct Length/Depth Product Height Product Width Product Weight Compliances Certifications1 x (0.5 - 1) mm², auxiliary terminals2 x (0.5 - 1) mm², auxiliary terminalsNoneFront fastening0.5 - 1.5 mm²Push in terminals100,000 Operations20 - 14< 2 λ, < 1 failure at 100,000,000 Operations (at Uₑ = 24 V DC, Umin = 17 V, Imin = 5.4 mA)III250 V55 °C440 V34000 V ACInterlocked opposing contacts50,000 Operations DA-DC-00004888.pdfDA-DC-00004881.pdfDA-DC-00004887.pdfDA-DC-00004889.pdfDA-DC-00004917.pdfDA-DC-00004918.pdfDA-DC-00004885.pdfDA-DC-00004880.pdfDA-DC-00004912.pdfDA-DC-00004913.pdfDA-DC-00004916.pdfDA-DC-00004919.pdfeaton-manual-motor-starters-nhi-accessory-dimensions-002.eps ETN.NHI-E-10-PKZ0-PI.edzIL03407011ZIL03801004ZIL122024ZUnhi_e_1_pi.dwgnhi_e_1_pi.stpDA-DC-00004316.pdfTerminal capacity (flexible with ferrule) Number of switches (fault signal)Lamp holderMounting methodTerminal capacity (solid)Connection typeLifespan, mechanicalTerminal capacity (solid/stranded AWG) Control circuit reliabilityOvervoltage categoryRated operational voltage (Ue) at DC - max Ambient operating temperature - max Rated operational voltage (Ue) at AC - max Pollution degreeRated impulse withstand voltage (Uimp) FeaturesLifespan, electrical Declarations of conformityDibujoseCAD model Instrucciones de instalaciónmCAD modelReportes de certificacionesAmbient operating temperature - min-25 °CSafe isolation440 V, Between auxiliary contacts and main contacts, According to EN 61140Used withMotor protective circuit-breakerNumber of contacts (normally open contacts)1Rated operational current (Ie) at AC-15, 220 V, 230 V, 240 V0.5 AElectric connection typeSpring clamp connectionModelTop mountingTerminal capacity (flexible)2 x (0.5 - 1.5) mm²0.5 - 1.5 mm²Number of contacts (normally closed contacts)Number of contacts (change-over contacts)Switching capacity (auxiliary contacts, general use)0.5 A, 250 V DC, (UL/CSA)Switching capacity (auxiliary contacts, pilot duty)E150, AC operated (UL/CSA)Rated operational current (Ie) at DC-13, 24 V1 AEaton Corporation plc Eaton House30 Pembroke Road Dublin 4, Ireland © 2023 Eaton. Todos los derechos reservados. Eaton is a registered trademark.All other trademarks areproperty of their respectiveowners./socialmedia。

4-237TELCOM SEMICONDUCTOR, INC.765418ORDERING INFORMATION Temperature Part No.Package Range TC4423COE 16-Pin SOIC (Wide)0°C to +70°C TC4423CPA 8-Pin Plastic DIP 0°C to +70°C TC4423EOE 16-Pin SOIC (Wide)– 40°C to +85°C TC4423EPA 8-Pin Plastic DIP – 40°C to +85°C TC4423MJA 8-Pin CerDIP – 55°C to +125°C TC4424COE 16-Pin SOIC (Wide)0°C to +70°C TC4424CPA 8-Pin Plastic DIP 0°C to +70°C TC4424EOE 16-Pin SO Wide – 40°C to +85°C s Low Output Impedance.............................3.5Ω Typs Latch-Up Protected . Will Withstand 1.5A ReverseCurrents Logic Input Will Withstand Negative Swing Upto 5Vs ESD Protected....................................................4 kVs Pinouts Same as TC1426/27/28; TC4426/27/28driving any other load (capacitive, resistive, or inductive)which requires a low impedance driver capable of high peak currents and fast switching times. For example, heavily loaded clock lines, coaxial cables, or piezoelectric transduc-ers can all be driven from the TC4423/4424/4425. The only known limitation on loading is the total power dissipated in the driver must be kept within the maximum power dissipa-tion limits of the package.Temperature Part No Package Range TC4424EPA 8-Pin Plastic DIP – 40°C to +85°C TC4424MJA 8-Pin CerDIP – 55°C to +125°C TC4425COE 16-Pin SO Wide 0°C to +70°C TC4425CPA 8-Pin Plastic DIP 0°C to +70°C TC4425EOE 16-Pin SO Wide – 40°C to +85°C TC4425EPA 8-Pin Plastic DIP – 40°C to +85°C TC4425MJA 8-Pin CerDIP – 55°C to +125°C TC4423/4/5-6 10/21/964-238TELCOM SEMICONDUCTOR, INC.3A DUAL HIGH-SPEED POWER MOSFET DRIVERSTC4423TC4424TC4425PDIP R θJ-C .....................................................45°C/W SOIC R θJ-A ...................................................155°C/W SOIC R θJ-C .....................................................75°C/W Operating Temperature Range C Version...............................................0°C to +70°C I Version ............................................- 25°C to +85°C E Version ...........................................- 40°C to +85°C M Version ........................................- 55°C to +125°C Package Power Dissipation (T A ≤ 70°C)Plastic DIP ......................................................730mW CerDIP............................................................800mW SOIC...............................................................470mW ELECTRICAL CHARACTERISTICS: T A = +25°C with 4.5V ≤ V DD ≤ 18V, unless otherwise specified.SymbolParameter Test Conditions Min Typ Max Unit InputV OHLogic 1 High Input Voltage 2.4——V V ILLogic 0 Low Input Voltage ——0.8V I IN Input Current0V ≤ V IN ≤ V DD – 1—1µA Output V OH High Output VoltageV DD – 0.025——V V OL Low Output Voltage——0.025V R O Output Resistance, HighI OUT = 10 mA, V DD = 18V — 2.85ΩR O Output Resistance, LowI OUT = 10 mA, V DD = 18V — 3.55ΩI PK Peak Output Current—3—A I REV Latch-Up ProtectionDuty Cycle ≤ 2% 1.5——A Withstand Reverse Currentt ≤ 300 µsec Switching Time (Note 1)t R Rise TimeFigure 1, C L = 1800 pF —2335nsec t F Fall TimeFigure 1, C L = 1800 pF —2535nsec t D1Delay TimeFigure 1, C L = 1800 pF —3375nsec t D2Delay TimeFigure 1, C L = 1800 pF —3875 nsec Power Supply I SPower Supply Current V IN = 3V (Both Inputs)— 1.5 2.5mAV IN = 0V (Both Inputs)—0.150.25mA ABSOLUTE MAXIMUM RATINGS*Supply Voltage.........................................................+22VInput Voltage, IN A or IN B......V DD + 0.3V to GND – 5.0VMaximum Chip Temperature.................................+150°CStorage Temperature Range ................– 65°C to +150°CLead Temperature (Soldering, 10 sec).................+300°CPackage Thermal ResistanceCerDIP R θJ-A ................................................150°C/WCerDIP R θJ-C ..................................................55°C/WPDIP R θJ-A ...................................................125°C/W4-239TELCOM SEMICONDUCTOR, INC.765431283A DUAL HIGH-SPEED POWER --MOSFET DRIVERS TC4423TC4424TC4425Figure 1. Inverting Driver Switching Time Figure 2. Noninverting Driver Switching TimeELECTRICAL CHARACTERISTICS (Cont.):Over operating temperature range with 4.5V ≤ V DD ≤ 18V, unless otherwise specified.SymbolParameter Test Conditions Min Typ Max Unit InputV IHLogic 1 High Input Voltage 2.4——V V ILLogic 0 Low Input Voltage ——0.8V I IN Input Current0V ≤ V IN ≤ V DD – 10—10µA Output V OH High Output VoltageV DD – 0.025——V V OL Low Output Voltage——0.025V R O Output Resistance, HighI OUT = 10 mA, V DD = 18V — 3.78ΩR O Output Resistance, LowI OUT = 10 mA, V DD = 18V — 4.38ΩI PK Peak Output Current—3—A I REV Latch-Up ProtectionDuty Cycle ≤ 2% 1.5——A Withstand Reverse Currentt ≤ 300 µsec Switching Time (Note 1)t R Rise TimeFigure 1, C L = 1800 pF —2860nsec t F Fall TimeFigure 1, C L = 1800 pF —3260nsec t D1Delay TimeFigure 1, C L = 1800 pF —32100nsec t D2Delay TimeFigure 1, C L = 1800 pF —38100nsec Power Supply I S Power Supply Current V IN = 3V (Both Inputs)—2 3.5mA V IN = 0V (Both Inputs)—0.20.3NOTE: 1. Switching times guaranteed by design.4-240TELCOM SEMICONDUCTOR, INC.3A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4423TC4424TC4425TYPICAL CHARACTERISTICS100100010,000C (pF)LOADt RIS E(n s ec)10080604020010080604020010*******,000C LOAD (pF) Rise Time vs. Supply VoltageT IM E(n s ec)Rise and Fall Times vs. Temperature T A (°C)Propagation Delay vs. Input Amplitude 3230282624222018–55–35525456585105125–15INPUT (V)Fall Time vs. Supply Voltage 1000 pF 1500 pF t RI SE(n s ec)4-241TELCOM SEMICONDUCTOR, INC.765431283A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4423TC4424TC4425TYPICAL CHARACTERISTICS (Cont.)Propagation Delay Time vs. Supply Voltage 5045403530252010.10.01D E LA YT IME(n s ec)Delay Time vs. Temperature IQ UI ESCENT(mA)14121086424681012141618DDV R D S(O N)(Ω)4681012141618DD V4-242TELCOM SEMICONDUCTOR, INC.SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)Supply Current vs. Capacitive LoadI SU PP L Y(mA )100100010,000Supply Current vs. Frequency FREQUENCY (kHz)I SUP P L Y(m A )I SUP PL Y(m A )C LOAD (pF)3A DUAL HIGH-SPEED MOSFET DRIVERSTC4423TC4424TC44254-243TELCOM SEMICONDUCTOR, INC.765431282000400600800100012001400020406080100120140AMBIENT TEMPERATURE (°C)M A X . P O W E R (m W )Thermal Derating Curves*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings (See page 2) may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability.3A DUAL HIGH-SPEED MOSFET DRIVERS TC4423TC4424TC4425。

TC4426TC4427TC4428TC4426/7/8-8 10/21/96© 2001 Microchip Technology Inc. DS21422A 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERSFEATURESs High Peak Output Current ...............................1.5A s Wide Operating Range ..........................4.5V to 18V s High Capacitive LoadDrive Capability ..........................1000pF in 25nsec s Short Delay Time ..............................< 40nsec Typ.s Consistent Delay Times With Changes in Supply VoltagesLow Supply Current— With Logic “1” Input ....................................4mA — With Logic “0” Input .................................400µA s Low Output Impedance.......................................7Ωs Latch-Up Protected ............. Will Withstand >0.5A Reverse Current.................................Down to – 5V s Input Will Withstand Negative Inputss ESD Protected.....................................................4kV sPinout Same as TC426/TC427/TC428GENERAL DESCRIPTIONThe TC4426/4427/4428 are improved versions of the earlier TC426/427/428 family of buffer/drivers (with which they are pin compatible). They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept,without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 4kV of electrostatic discharge.As MOSFET drivers, the TC4426/4427/4428 can easily switch 1000pF gate capacitances in under 30nsec, and provide low enough impedances in both the ON and OFF states to ensure the MOSFET's intended state will not be affected, even by large transients.Other compatible drivers are the TC4426A/27A/28A.These drivers have matched input to output leading edge and falling edge delays, tD1 and tD2, for processing short duration pulses in the 25 nsec range. They are pin compat-ible with the TC4426/27/28.FUNCTIONAL BLOCK DIAGRAMORDERING INFORMATIONTemperature Part No.PackageRangeTC4426COA 8-Pin SOIC0°C to +70°C TC4426CPA 8-Pin Plastic DIP 0°C to +70°C TC4426EOA 8-Pin SOIC– 40°C to +85°C TC4426EPA 8-Pin Plastic DIP – 40°C to +85°C TC4426MJA 8-Pin CerDIP – 55°C to +125°C TC4427COA 8-Pin SOIC0°C to +70°C TC4427CPA 8-Pin Plastic DIP 0°C to +70°C TC4427EOA 8-Pin SOIC– 40°C to +85°C TC4427EPA 8-Pin Plastic DIP – 40°C to +85°C TC4427MJA 8-Pin CerDIP – 55°C to +125°C TC4428COA 8-Pin SOIC0°C to +70°C TC4428CPA 8-Pin Plastic DIP 0°C to +70°C TC4428EOA 8-Pin SOIC– 40°C to +85°C TC4428EPA 8-Pin Plastic DIP – 40°C to +85°C TC4428MJA8-Pin CerDIP– 55°C to +125°C21.5A DUAL HIGH-SPEED POWER MOSFET DRIVERSTC4426TC4427TC4428© 2001 Microchip Technology Inc. DS21422ATC4426/7/8-8 10/21/96ABSOLUTE MAXIMUM RATINGS*Supply Voltage.........................................................+22V Input Voltage, IN A or IN B.(V DD + 0.3V) to (GND – 5.0V)Maximum Chip Temperature.................................+150°C Storage Temperature Range ................– 65°C to +150°C Lead Temperature (Soldering, 10 sec).................+300°C Package Thermal ResistanceCerDIP R θJ-A ................................................150°C/W CerDIP R θJ-C ..................................................50°C/W PDIP R θJ-A ...................................................125°C/W PDIP R θJ-C .....................................................42°C/W SOIC R θJ-A ...................................................155°C/W SOIC R θJ-C .....................................................45°C/W Operating Temperature RangeC Version...............................................0°C to +70°C E Version ..........................................– 40°C to +85°C M Version .......................................– 55°C to +125°C Package Power Dissipation (T A ≤ 70°C)Plastic .............................................................730mW CerDIP............................................................800mW SOIC...............................................................470mW*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause perma-nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied.Exposure to absolute maximum rating conditions for extended periods may affect device reliability.ELECTRICAL CHARACTERISTICS: T A = +25°C with 4.5V ≤ V DD ≤ 18V, unless otherwise specified.SymbolParameterTest Conditions MinTypMaxUnitInput V IH Logic 1 High Input Voltage 2.4——V V IL Logic 0 Low Input Voltage ——0.8V I IN Input Current0V ≤ V IN ≤ V DD– 1—1µA Output V OH High Output Voltage V DD – 0.025——V V OL Low Output Voltage ——0.025V R O Output Resistance V DD = 18V, I O = 10mA—710ΩI PK Peak Output Current Duty Cycle ≤ 2%, t ≤ 30µsec — 1.5—A I REVLatch-Up ProtectionDuty Cycle ≤ 2%> 0.5——AWithstand Reverse Currentt ≤ 30 µsec Switching Time (Note 1)t R Rise Time Figure 1—1930nsec t F Fall Time Figure 1—1930nsec t D1Delay Time Figure 1—2030nsec t D2Delay Time Figure 1—4050nsec Power Supply I SPower Supply CurrentV IN = 3V (Both Inputs)—— 4.5mA V IN = 0V (Both Inputs)——0.4mANOTE: 1. Switching times are guaranteed by design.31.5A DUAL HIGH-SPEED POWER MOSFET DRIVERSTC4426TC4427TC4428© 2001 Microchip Technology Inc. DS21422ATC4426/7/8-8 10/21/96ELECTRICAL CHARACTERISTICS: Specifications measured over operating temperature range with 4.5V ≤V DD ≤ 18V, unless otherwise specified.SymbolParameterTest Conditions MinTypMaxUnitInput V IH Logic 1 High Input Voltage 2.4——V V IL Logic 0 Low Input Voltage ——0.8V I IN Input Current0V ≤ V IN ≤ V DD– 10—10µA Output V OH High Output Voltage V DD – 0.025——V V OL Low Output Voltage ——0.025V R O Output Resistance V DD = 18V, I O = 10mA—912ΩI PK Peak Output Current Duty Cycle ≤ 2%, t ≤ 300µsec — 1.5—A I REVLatch-Up ProtectionDuty Cycle ≤ 2%> 0.5——AWithstand Reverse Currentt ≤ 300µsec Switching Time (Note 1)t R Rise Time Figure 1——40nsec t FFall Time Figure 1——40nsec t D1Delay Time Figure 1——40nsec t D2Delay Time Figure 1——60nsec Power Supply I SPower Supply CurrentV IN = 3V (Both Inputs)——8mA V IN = 0V (Both Inputs)——0.6mANOTE: 1. Switching times are guaranteed by design.Figure 1. Switching Time Test CircuitNOTE: The values on this graph represent the loss seen by both drivers in a package during one complete cycle. For a single driver, divide the stated values by 2. For a single transition of a single driver, divide the stated value by 4.20004006008001000120014001600AMBIENT TEMPERATURE (°C)M A X . P O W E R (m W )Thermal Derating CurvesCrossover Energy Loss4A • s e c186810121416876543210–10–9V DD41.5A DUAL HIGH-SPEED POWER MOSFET DRIVERSTC4426TC4427TC4428© 2001 Microchip Technology Inc. DS21422ATC4426/7/8-8 10/21/96TYPICAL CHARACTERISTICST I M E(n s e c )Rise and Fall Times vs. TemperatureTEMPERATURE (°C)Propagation Delay vs. Supply Voltaget F A L L (n s e c )4681012141618Fall Time vs. Supply Voltaget R I S E (n s e c )Rise Time vs. Supply Voltage100100010,000C (pF)LOADFall TIme vs. Capacitive Load100100010,00060–55–35525456585105125–15604681012141618D E L A Y T I M E (n s e c )100V DDC (pF)LOADV DD806040200100806040201008060402050403020105040302010t R I S E (n s e c )t F A L L (n s e c )51.5A DUAL HIGH-SPEED POWER MOSFET DRIVERSTC4426TC4427TC4428© 2001 Microchip Technology Inc. DS21422ATC4426/7/8-8 10/21/96TYPICAL CHARACTERISTICS (Cont.)High-State Output Resistance4T A (°C)I (m A )Q U I E S C E NT 186810121416D E L A Y T I M E (n s e c )60–55–35–15525456585105125Effect of Input Amplitude on Delay TimePropagation Delay Time vs. Temperature46810121416184681012141618Low-State Output ResistanceV DDV DDV DD5040302010R D S (O N ) (Ω)202515108561.5A DUAL HIGH-SPEED POWER MOSFET DRIVERSTC4426TC4427TC4428© 2001 Microchip Technology Inc. DS21422ATC4426/7/8-8 10/21/96SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)Supply Current vs. Capacitive Load60I S U P P L Y (m A )100100010,000Supply Current vs. Frequency101001000FREQUENCY (kHz)C (pF)LOAD5040302010060504030201006050403020100I S U P P L Y (m A )I S U P P L Y (m A )71.5A DUAL HIGH-SPEED POWER MOSFET DRIVERSTC4426TC4427TC4428© 2001 Microchip Technology Inc. DS21422ATC4426/7/8-8 10/21/96PACKAGE DIMENSIONS81.5A DUAL HIGH-SPEED POWER MOSFET DRIVERSTC4426TC4427TC4428© 2001 Microchip Technology Inc. DS21422ATC4426/7/8-8 10/21/96PACKAGE DIMENSIONS Cont.)9© 2001 Microchip Technology Inc. DS21422ATC4426/7/8-8 10/21/96Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip ís products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, except as maybe explicitly expressed herein, under any intellec-tual property rights. The Microchip logo and name are registered trademarks of Microchip Technology Inc. in the U.S.A. and other countries. All rights reserved. All other trademarks mentioned herein are the property of their respective companies.All rights reserved. © 2001 Microchip Technology Incorporated. 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