BT151S-650R贴片单向可控硅晶闸管
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12A SERIES STANDARD
The BT151S-650R SCR is suitable to fit modes of control found in applications such as voltage
regulation circuits for motorbikes,over-voltage crowbar protection,motor control circuits in power tools and kitchen aids , inrush current limiting circuits ,capacitive discharge ignition.The insulated fullpack package allows a back toback configuration.
DESCRIPTION
FEATURES
•Repetitive Peak Off-State Voltage : 650V •R.M.S On-State Current ( I = 12 A )•Low On-State Voltage (1.7V(Max.)@ I )•RoHS Compliant
T(RMS)TM
ABSOLUTE MAXIMUM RATINGS ()
T = 25°C UNLESS OTHERWISE SPECIFIED J SILICON CONTROLLED RECTIFIERS
Symbol Parameter Value Unit I T(RMS)RMS on-state current Tc =109°C 12A I T(AV)Average on-state current
Tc =109°C
7.5A I TSM Non repetitive surge peak on-state current tp =8.3ms
Tj=25°C
132
A tp =10ms
120
I²t I²t Value for fusing
tp =10ms Tj=25°C 72A²S dI/dt Critical rateof rise of on-state current I G =2x I GT ,tr ≤100ns F =60Hz Tj=125°C 50A/µs I GM Peak gate current
tp =20µs
Tj=125°C 2A P G(AV)Average gate power dissipation Tj=125°C
0.5W T stg Storage junction temperature range -40to +150
°C
T j Operating junction temperature range -40to +125
V RGM
Maximum peak reverse gate voltage
5
V
V DRM Repetitive Peak off -State Voltage 650V V RRM Repetitive Peak Reverse Voltage
650
V
ELECTRICAL CHARACTERISTICS ( TC = 25 °C UNLESS OTHERWISE NOTED )
VOLTAGE CURRENT CHARACTERISTIC OF SCR
Symbol Test Conditions
Min.Typ.Max.Unit I GT V D =12V R L =140ohm
-315mA V GT -0.6 1.5V V GD V D =V DRM R L =3.3kohm T j =125°C
--0.2V I H I T =500mA -830mA I L I G =1.2I GT
-1040mA d /d V t V D =67%V DRM Gate open T j =125°C 200400-V/µs V TM I TM =23A t p =380µs T j =25°C -- 1.7V I DRM V D =V DRM
V R =V RRM
T j =25°C --10µA I RRM
T j =125°C --0.5
mA
PACKAGE MECHANICAL DATA TO-252(DPAK)