JESD22A103D高温存储试验

JEDEC标准族JE DEC工业标准环境应力试验[JDa1]JE SD22-A100-B Cycled Temperature-Humidity-Bias Life Test 上电温湿度循环寿命试验, (Revision of JESD22-A100-A) April 2000 [Text-jd001][JDa2]JE SD22-A101-B Steady State Temperature Humidity Bias Life Test 上电温湿度稳态寿命试验, (Revision of JESD22-A101-A) April 1997 [Text-jd002][JDa3]JE SD22-A102-C Accelerated Moisture Resistance -Unbiased Autoclave高加速蒸煮试验, (Revision of JESD22-A102-B) December 2000 [Text-jd003][JDa4]JE SD22-A103-A Test Method A103-A High Temperature Storage Life高温储存寿命试验, (Revision of Test Method A103 Previously Published in JESD22-B) July 1989 [Text-jd004] [JDa5]JE SD22-A103-B High T emperature Storage Life高温储存寿命试验, (Revision of JESD22-A103-A) August 2001 [Text-jd005][JDa6]JE SD22-A104-B Temperature Cycling温度循环, (Revision of JESD22-A104-A) July 2000 (参见更新版本A104C) [Text-jd006][JDa7]EIA/JE S D22-A105-B Test Method A105-B Power and Temperature Cycling上电和温度循环, (Revision of Test Method A105-A) February 1996 [Text-jd007][JDa8]JE SD22-A106-A Test Method A106-A Thermal Shock 热冲击, (Revision of Test Method A106-Previously Published in JESD22-B) April 1995 [Text-jd008][JDa9]JE SD22-A107-A Salt Atmosphere盐雾试验, (Revision of Test Method A107-Previously Published in JESD22-B)December 1989 [Text-jd009][JDa10]JE SD22-A108-B Temperature, Bias, and Operating Life高温环境条件下的工作寿命试验, (Revision of JESD22-A108-A) December 2000[JDa11]JE SD22-A110-B Test Method A110-B Highly-Accelerated T emperature and Humidity Stress Test (HAST)高加速寿命试验, (Revision of Test Method A110-A) February 1999 [Text-jd010][JDa12]JE SD22-A113-B Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing非密封表贴器件在可靠性试验以前的预处理, (Revision of Test Method A113-A) March 1999 [Text-jd011][JDa13]JE SD22-A118 Accelerated Moisture Resistance - Unbiased HAST不上电的高加速湿气渗透试验, December 2000 [Text-jd012][JDa14]JE SD22-B106-B Test Method B106-B Resistance to Soldering Temperature for Through-Hole Mounted Devices插接器件的抗焊接温度试验, (Revision of Test MethodB106-A) February 1999 [Text-jd013][JDa15]EIA/JE S D47 Stress-Test-Driven Qualification of Integrated Circuits集成电路施加应力的产品验收试验, July 1995 [Text-jd031][JDa16]JE SD22-A104C Temperature Cycling, (Revision of JESD22-A104-B) May 2005 [Text-jd040]电应力和电测试试验[JDb1]JE SD22-A114-B Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM)人体模型条件下的静电放电敏感度试验, (Revision of JESD22-A114-A) June 2000 [Text-jd014][JDb2]EIA/JE S D22-A115-A Electrostatic Discharge (ESD)Sensitivity Testing Machine Model (MM)机器模型条件下的静电放电敏感度试验, (Revision of EIA/JESD22-A115) October 1997 [Text-jd015][JDb3]JE SD22-A117 Electrically Erasable Programmable ROM (EEPROM) Program/Erase Endurance and Data Retention Test EEPROM的擦涂和数据保存试验, January 2000[Text-jd016][JDb4]EIA/JE S D78 IC Latch-Up T est集成电路器件闩锁试验, March 1997 [Text-jd017][JDb5]JE SD22-C101-A Field-Induced Charged-Device Model Test Method forElectrostatic-Discharge-Withstand Thresholds of Microelectronic Components微电子器件在电荷感应模型条件下的抗静电放电试验, (Revision of JESD22-C101) June2000 [Text-jd018]机械应力试验[JDc1]JE SD-22-B103-A Test Method B103-A Vibration, Variable Frequency振动和扫频试验(Revision of Test Method B103 Previously Published in JESD22-B) July 1989 [Text-jd019] [JDc2]JE SD22-B104-A Test Method B104-A Mechanical Shock机械冲击(Revision of Test Method B104, Previously Published in JEDEC Standard No.22-B) September 1990[Text-jd020][JDc3]EIA/JE S D22-B116 Wire Bond Shear Test Method焊线邦定的剪切试验方法, July 1998 [Text-jd021][JDc4]JE SD22-B117 BGA Ball Shear BGA焊球的剪切试验, July 2000 [Text-jd022][JDc5]JE SD22B113 Board Level Cyclic Bend Test Method for Interconnect Reliability Characterization of Components for Handheld Electronic Products, March 2006 [Text-jd038] [JDc6]JESD22-B111 Board Level Drop Test Method of Components for Handheld Electronic Products, July 2003 [Text-jd039] 综合试验与测试[JDd1]JE DEC Standard No.22-A109 Test Method A109 Hermeticity密封性试验, July 1988 [Text-jd023][JDd2]JE SD22-A120 Test Method for the Measurement of Moisture Diffusivity and Water Solubility in Organic Materials Used in Integrated Circuits集成电路器件中使用的有机材料水分扩散和水溶性测定试验方法, June 2001 [Text-jd024][JDd3]JE SD22-B100-A Physical Dimensions物理尺寸的测量, (Revision of Test Method B100-Previously Published in JESD22-B) April 1990 [Text-jd025][JDd4]JE SD22-B101 Test Method B101 External Visual外观检查, (Previously published in JESD22-B) September 1987 [Text-jd026][JDd5]EIA/JE S D22-B102-C Solderability Test Method可焊性试验方法, September 1998 [Text-jd027][JDd6]EIA/JE S D22-B105-B Test Method B105-B Lead Integrity器件管脚的完整性试验, (Revision of Test Method B105-A) January 1999 [Text-jd028][JDd7]EIA/JE S D22-B107-A Test Method B107-A Marking Permanency图标的耐久性试验, (Revision of Test Method B107-Previously Published in JESD22-B) September 1995[Text-jd029][JDd8]JE SD22-B108 Coplanarity T est for Surface-Mount Semiconductor Devices表贴半导体器件的共面性试验, November 1991 [Text-jd030]其它[JDe1]JE P113-B Symbol and Labels for Moisture-Sensitive Devices湿度敏感器件的符号和标识, (Revision of JEP113-A) May1999 [Text-jd032][JDe2]EIA/JEP122 Failure Mechanisms and Models for Silicon Semiconductors Devices硅半导体器件的失效机理和模型, February 1996 [Text-jd033][JDe3]IPC/JEDEC J-STD-020A Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices 针对非密封表贴半导体器件的湿度/回流焊敏感度分类和级别, April 1999 [Text-jd034][JDe4]IPC/JEDEC J-STD-033 Standard for Handling, Packing, Shipping and Use of Moisture/Reflow Sensitive Surface Mount Devices湿度/回流焊敏感标贴器件的处理、包装、运输和使用的标准, May 1999 [Text-jd035][JDe5]EIA/JEP103-A Suggested Product-Documentation Classifications and Disclaimers, (Revis ion of JEP103) July 1996 [Text-jd036][JDe6]IPC/JEDEC J-STD-020D.1 Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices 针对非密封表贴半导体器件的湿度/回流焊敏感度分类和级别, Supersedes IPC/JEDEC J-STD-020D August 2007, March 2008 [Text-jd037]。

(完整)JESD22简介+目录JESD22标准定义及意义2. A100循环温湿度偏置寿命JESD22-A100CPublished：Oct—2007 CYCLEDTEMPERATUREHUMIDITYBIASLIFETEST：TheCycledTemperature-humidity—biasLifeTesti sperformedforthepurposeofevaluatingthere liabilityofnonhermeticpackagedsolidstatedevicesinhumidenvironments。

Itemploysconditionsoftemperaturecycling，humidity,andbiasthatacceleratethepenetrationofmoisturethroughtheexternalprotectivematerial(encapsulateorseal）oralongtheinterfacebetweentheexternalprotectivematerialandthemetallicconductorsthatpassthroughit.TheCycledTemperature-Humidity—BiasLifeTestistypicallyperformed oncavitypackages（e。

g。

，MQUADs,liddedceramicpingridarrays，etc.）asanalternativetoJESD22—A101orJESD22-A110.JESD22—A100C 发布：2007 年 10月循环温湿度偏置寿命试验循环温湿度偏置寿命试验以评估非气密封装固态器件在潮湿环境中的可靠性为目的。

它使用循环温度，湿度，以及偏置条件来加速水汽对外部保护性材料（封装或密封）或沿着外部保护材料和贯通其的金属导体的界面的穿透作用。

JESD22-A100E:2020 Cycled Temperature-Humidity-Bias with Surface Condensation Life Test (循环温度-湿度-偏差与表面凝结寿命测试)JESD22-A101D.01:2021 Steady-State Temperature-Humidity Bias Life Test(稳态温度-湿度偏差寿命测试)JESD22-A102E:2015(R2021) Accelerated Moisture Resistance - Unbiased Autoclave (加速的耐湿性-无偏高压灭菌器)JESD22-A103E.01:2021 High Temperature Storage Life(高温储存寿命)JESD22-A104F :2020 Temperature Cycling(温度循环)JESD22-A105D:2020 Power and Temperature Cycling(功率和温度循环)JESD22-A106B.01:2016 Thermal Shock(热冲击)JESD22-A107C:2013 Salt Atmosphere(盐雾)JESD22-A108F:2017 Temperature, Bias, And Operating Life(温度,偏置和使用寿命) JESD22-A109B:2011 HERMETICITY(气密性)JESD22-A110E.01:2020 Highly Accelerated Temperature and Humidity Stress Test (HAST) -高加速温度和湿度应力测试(HAST)JESD22-A111B :2018 Evaluation Procedure for Determining Capability to Bottom Side Board Attach by Full Body Solder Immersion of Small Surface Mount Solid State Devices(通过小型表面安装固态器件的全身焊锡浸入确定底部侧板连接能力的评估程序)。

海思消费类芯片可靠性测试技术总体规范V2.0海思消费类芯片可靠性测试技术总体规范V2.0是针对芯片可靠性测试的总体规范要求，包括电路可靠性和封装可靠性。

该规范适用于量产芯片验证测试阶段的通用测试需求，并能够覆盖芯片绝大多数的可靠性验证需求。

本规范描述的测试组合可能不涵盖特定芯片的所有使用环境，但可以满足绝大多数芯片的通用验证需求。

该规范规定了芯片研发或新工艺升级时，芯片规模量产前对可靠性相关测试需求的通用验收基准。

这些测试或测试组合能够激发半导体器件电路、封装相关的薄弱环节或问题，通过失效率判断是否满足量产出口标准。

在芯片可靠性测试中，可靠性是一个含义广泛的概念。

以塑封芯片为例，狭义的“可靠性”一般指芯片级可靠性，包括电路相关的可靠性（如ESD、Latch-up、HTOL）和封装相关的可靠性（如PC、TCT、HTSL、HAST等）。

但是芯片在应用场景中往往不是“独立作战”，而是以产品方案（如PCB板上的一个元器件）作为最终应用。

因此广义的“可靠性”还包括产品级的可靠性，例如上电温循试验就是用来评估芯片各内部模块及其软件在极端温度条件下运行的稳定性。

产品级的可靠性根据特定产品的应用场景来确定测试项和测试组合，并没有一个通用的规范。

本规范重点讲述芯片级可靠性要求。

本规范引用了JESD47I标准，该标准是可靠性测试总体标准。

在芯片可靠性测试中，测试组合通常以特定的温度、湿度、电压加速的方式来激发问题。

本规范还新增了封装可靠性测试总体流程图和测试前后的要求，并将《可靠性测试总体执行标准（工业级）》.xlsx作为本规范的附件。

海思消费类芯片可靠性测试技术总体规范V2.0本规范旨在规范海思消费类芯片的可靠性测试技术，确保其性能和质量符合要求。

以下是通用芯片级可靠性测试要求的详细介绍。

2.通用芯片级可靠性测试要求2.1电路可靠性测试电路可靠性测试是对芯片在不同应力条件下的可靠性进行评估的过程。

在测试过程中，需要按照以下要求进行测试：HTOL：在高温条件下进行测试，温度不低于125℃，Vcc不低于Vccmax。

JESD22标准定义及意义JESD22-A101orJESD22-A110.3. A101稳态温湿度偏置寿命JESD22-A101-BPublished:Apr-1997STEADY-STATETEMPERATUREHUMIDITYBIASLIFETEST: Thisstandardestablishesadefinedmethodandconditionsf orperformingatemperaturehumiditylifetestwithbiasapplied.Thetestisusedtoevaluatethereliabilityofnonhermeticpackagedsolidstatedevicesinhumidenvironments.Itemployshightem peratureandhumidityconditionstoacceleratethepenetrati onofmoisturethroughexternalprotectivematerialoralongi nterfacesbetweentheexternalprotectivecoatingandcondu ctorsorotherfeatureswhichpassthroughit.Thisrevisionen hancestheabilitytoperformthistestonadevicewhichcanno tbebiasedtoachieveverylowpowerdissipation.JESD22-A101-B发布：1997 年8 月稳态温湿度偏置寿命试验本标准建立了一个定义的方法，用于进行一个施加偏置电压的温湿度寿命试验。

本试验用于评估非气密封装固态器件在潮湿环境下的可靠性。

试验采用高温和高湿条件以加速水汽对外部保护材料或沿着外部保护材料和外部保护涂层，贯通其的导体或其他部件的穿透作用。

JESD22-A102标准流程
JESD22-A102标准流程包括以下步骤：
1. 准备样品：根据试验要求准备试验样品，可以参考相关标准或规范。

2. 安装样品：将试验样品安装到试验设备中，确保样品的稳定性和正确性。

3. 设定试验条件：根据试验要求设定试验条件，包括温度、相对湿度、蒸汽压力和持续时间等。

4. 开始试验：启动试验设备，按照设定的试验条件进行试验。

5. 监控试验过程：在试验过程中监控样品的状况，记录任何可能出现的变化。

6. 结束试验：在达到设定的试验时间后结束试验。

7. 收集数据：收集试验数据，进行分析和处理。

8. 编写报告：根据试验结果编写试验报告，包括数据分析和结论等。

以上是JESD22-A102标准流程的一般步骤，具体操作可能因试验要求和设备不同而有所差异。

在进行试验前，建议详细阅读相关标准或规范，并按照规范进行操作。

A101C 稳态温度、湿度/偏压、寿命试验1.范围:本测试方法用于评估非气密性封装IC器件在湿度环境下的可靠性.温度/湿度/偏压条件应用于加速湿气的渗透,可通过外部保护材料(塑封料或封口),或在外部保护材料与金属传导材料之间界面.2.设备本测试要求一个温湿测试炉,能够维持一个规定的温度和相关的持续湿度,同时在规定的偏压电路来测试提供电子连接元件.2.1温度与相关的湿度腔体必须能提供可控制温度和相关的湿度条件.在升或降过程.2.2应力下的元件应力下的元件应固定, 温度的变化最小化。

2.3污染最小化必须小心选择板和插座材料,以使释放的污染最小化,以及因腐蚀或其他失效引起的降级最小化.2.4离子污染设备的离子污染(如测试板/插座/电线/储存容器/插件箱等)必须受控,避免影响测试制品.2.5去离子水必须使用室温下最小1M欧.cm的去离子水3.测试条件测试条件包括温度,相关的湿度,和元件加偏压的时间注1 公差应用于整个可用的测试区域.注2 仅供参考注3 测试条件应持续适用,除中间读数点.对中间读数点,元件应在4.5规定时间内返回加压. 注4 典型为1000(-24,+168)3.2偏压指南依以下指南,应用两个偏压的方法之一A 最小化电源功率B选择尽可能多的金属脚加偏压C尽可能多通过芯片金属化加势差.D在操作范围内最大电压注上述的指南优先依赖于失效机理与规定的元件参数.E两种方法,满足指南,选择更严厉方式1)持续偏压: DC偏压必须持续提供.当芯片温度比腔体温度低于10度时,持续偏压比循环偏压更严厉,或,如果芯片温度未知,当试验下的元件热耗小于200mV.如果热耗大于200mV,则芯片温度应计算.如果芯片温度超过腔体环境温度5度,因为失效机理的加速因子将受影响，那么芯片温升必须包括在测试结果的报告中.2)循环偏压: 作用于测试的元件上的DC电压,采用合适的频率和占空比应被周期中断.如果偏压电路导致超过腔体环境的温升大于10C, ΔTja, 那么循环偏压比持续偏压更严厉,当对规定的元件类型优化时. 热作为功率的结果导致湿气从芯片上离开,因此隐藏了与湿气相关的失效机理.循环偏压当元件热耗不发生时,能让湿气在关状态时在芯片上积累.测试元件循环偏压对大多数塑料封装微型电路来说,1小时开1小时关,优先考虑.芯片温度,作为已知热阻和热耗基础上计算,应被结果报告引用,不管是否超出腔体的5度或更多.3.2.1选择和报告4.程序测试元件必须采用如下方式固定，在规定的电气偏压下，暴露在规定温度和湿度条件下。

JEDEC工业标准环境应力试验[JDa1]JESD22-A100-B Cycled Temperature-Humidity-Bias Life Test 上电温湿度循环寿命试验, (Revision of JESD22-A100-A) April 2000 [Text-jd001][JDa2]JESD22-A101-B Steady State Temperature Humidity Bias Life Test 上电温湿度稳态寿命试验, (Revision of JESD22-A101-A) April 1997 [Text-jd002][JDa3]JESD22-A102-C Accelerated Moisture Resistance -Unbiased Autoclave高加速蒸煮试验, (Revision of JESD22-A102-B) December 2000 [Text-jd003][JDa4]JESD22-A103-A Test Method A103-A High Temperature Storage Life高温储存寿命试验, (Revision of Test Method A103 Previously Published in JESD22-B) July 1989[Text-jd004][JDa5]JESD22-A103-B High Temperature Storage Life高温储存寿命试验, (Revision of JESD22-A103-A) August 2001 [Text-jd005][JDa6]JESD22-A104-B Temperature Cycling温度循环, (Revision of JESD22-A104-A) July 2000 (参见更新版本A104C) [Text-jd006][JDa7]EIA/JESD22-A105-B Test Method A105-B Power and Temperature Cycling上电和温度循环, (Revision of Test Method A105-A) February 1996 [Text-jd007][JDa8]JESD22-A106-A Test Method A106-A Thermal Shock热冲击, (Revision of Test Method A106-Previously Published in JESD22-B) April 1995 [Text-jd008][JDa9]JESD22-A107-A Salt Atmosphere盐雾试验, (Revision of Test Method A107-Previously Published in JESD22-B) December 1989 [Text-jd009][JDa10]JESD22-A108-B Temperature, Bias, and Operating Life高温环境条件下的工作寿命试验, (Revision of JESD22-A108-A) December 2000[JDa11]JESD22-A110-B Test Method A110-B Highly-Accelerated Temperature and Humidity Stress Test (HAST)高加速寿命试验, (Revision of Test MethodA110-A) February 1999 [Text-jd010][JDa12]JESD22-A113-B Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing非密封表贴器件在可靠性试验以前的预处理, (Revision of TestMethod A113-A) March 1999 [Text-jd011][JDa13]JESD22-A118 Accelerated Moisture Resistance - Unbiased HAST不上电的高加速湿气渗透试验, December 2000 [Text-jd012][JDa14]JESD22-B106-B Test Method B106-B Resistance to Soldering Temperature for Through-Hole Mounted Devices插接器件的抗焊接温度试验, (Revision of Test Method B106-A) February 1999 [Text-jd013][JDa15]EIA/JESD47 Stress-Test-Driven Qualification of Integrated Circuits集成电路施加应力的产品验收试验, July 1995 [Text-jd031][JDa1]JESD22-A104C Temperature Cycling, (Revision of JESD22-A104-B) May 2005 [Text-jd040]电应力和电测试试验[JDb1]JESD22-A114-B Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM)人体模型条件下的静电放电敏感度试验, (Revision of JESD22-A114-A)June 2000 [Text-jd014][JDb2]EIA/JESD22-A115-A Electrostatic Discharge (ESD) Sensitivity Testing Machine Model (MM)机器模型条件下的静电放电敏感度试验, (Revision of EIA/JESD22-A115)October 1997 [Text-jd015][JDb3]JESD22-A117 Electrically Erasable Programmable ROM (EEPROM) Program/Erase Endurance and Data Retention Test EEPROM的擦涂和数据保存试验, January 2000 [Text-jd016][JDb4]EIA/JESD78 IC Latch-Up Test集成电路器件闩锁试验, March 1997 [Text-jd017] [JDb5]JESD22-C101-A Field-Induced Charged-Device Model Test Method for Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components微电子器件在电荷感应模型条件下的抗静电放电试验, (Revision of JESD22-C101) June2000 [Text-jd018]机械应力试验[JDc1]JESD-22-B103-A Test Method B103-A Vibration, Variable Frequency振动和扫频试验(Revision of Test Method B103 Previously Published in JESD22-B) July1989 [Text-jd019][JDc2]JESD22-B104-A Test Method B104-A Mechanical Shock机械冲击(Revision of Test Method B104, Previously Published in JEDEC Standard No.22-B) September 1990[Text-jd020][JDc3]EIA/JESD22-B116 Wire Bond Shear Test Method焊线邦定的剪切试验方法, July 1998 [Text-jd021][JDc4]JESD22-B117 BGA Ball Shear BGA焊球的剪切试验, July 2000 [Text-jd022][JDc5]JESD22B113 Board Level Cyclic Bend Test Method for Interconnect Reliability Characterization of Components for Handheld Electronic Products, March 2006[Text-jd038][JDc6]JESD22-B111 Board Level Drop Test Method of Components for Handheld Electronic Products, July 2003 [Text-jd039]综合试验与测试[JDd1]JEDEC Standard No.22-A109 Test Method A109 Hermeticity密封性试验, July 1988 [Text-jd023][JDd2]JESD22-A120 Test Method for the Measurement of Moisture Diffusivity and Water Solubility in Organic Materials Used in Integrated Circuits集成电路器件中使用的有机材料水分扩散和水溶性测定试验方法, June 2001 [Text-jd024][JDd3]JESD22-B100-A Physical Dimensions物理尺寸的测量, (Revision of Test Method B100-Previously Published in JESD22-B) April 1990 [Text-jd025][JDd4]JESD22-B101 Test Method B101 External Visual外观检查, (Previously published in JESD22-B) September 1987 [Text-jd026][JDd5]EIA/JESD22-B102-C Solderability Test Method可焊性试验方法, September 1998 [Text-jd027][JDd6]EIA/JESD22-B105-B Test Method B105-B Lead Integrity器件管脚的完整性试验, (Revision of Test Method B105-A) January 1999 [Text-jd028][JDd7]EIA/JESD22-B107-A Test Method B107-A Marking Permanency图标的耐久性试验, (Revision of Test Method B107-Previously Published in JESD22-B) September 1995 [Text-jd029][JDd8]JESD22-B108 Coplanarity Test for Surface-Mount Semiconductor Devices表贴半导体器件的共面性试验, November 1991 [Text-jd030]其它[JDe1]JEP113-B Symbol and Labels for Moisture-Sensitive Devices湿度敏感器件的符号和标识, (Revision of JEP113-A) May 1999 [Text-jd032][JDe2]EIA/JEP122 Failure Mechanisms and Models for Silicon Semiconductors Devices硅半导体器件的失效机理和模型, February 1996 [Text-jd033][JDe3]IPC/JEDEC J-STD-020A Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices针对非密封表贴半导体器件的湿度/回流焊敏感度分类和级别, April 1999 [Text-jd034][JDe4]IPC/JEDEC J-STD-033 Standard for Handling, Packing, Shipping and Use of Moisture/Reflow Sensitive Surface Mount Devices湿度/回流焊敏感标贴器件的处理、包装、运输和使用的标准, May 1999 [Text-jd035][JDe5]EIA/JEP103-A Suggested Product-Documentation Classifications and Disclaimers, (Revision of JEP103) July 1996 [Text-jd036][JDe6]IPC/JEDEC J-STD-020D.1 Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices针对非密封表贴半导体器件的湿度/回流焊敏感度分类和级别, Supersedes IPC/JEDEC J-STD-020D August 2007, March2008 [Text-jd037]。

JEDEC工业标准环境应力试验[JDa1]JESD22-A100-B Cycled Temperature-Humidity-Bias Life Test 上电温湿度循环寿命试验, (Revision of JESD22-A100-A) April 2000 [Text-jd001][JDa2]JESD22-A101-B Steady State Temperature Humidity Bias Life Test 上电温湿度稳态寿命试验, (Revision of JESD22-A101-A) April 1997 [Text-jd002][JDa3]JESD22-A102-C Accelerated Moisture Resistance -Unbiased Autoclave高加速蒸煮试验, (Revision of JESD22-A102-B) December 2000 [Text-jd003][JDa4]JESD22-A103-A Test Method A103-A High Temperature Storage Life高温储存寿命试验, (Revision of Test Method A103 Previously Published in JESD22-B) July 1989 [Text-jd004] [JDa5]JESD22-A103-B High Temperature Storage Life高温储存寿命试验, (Revision of JESD22-A103-A) August 2001 [Text-jd005][JDa6]JESD22-A104-B Temperature Cycling温度循环, (Revision of JESD22-A104-A) July 2000 (参见更新版本A104C) [Text-jd006][JDa7]EIA/JESD22-A105-B Test Method A105-B Power and Temperature Cycling上电和温度循环, (Revision of Test Method A105-A) February 1996 [Text-jd007][JDa8]JESD22-A106-A Test Method A106-A Thermal Shock热冲击, (Revision of Test Method A106-Previously Published in JESD22-B) April 1995 [Text-jd008][JDa9]JESD22-A107-A Salt Atmosphere盐雾试验, (Revision of Test Method A107-Previously Published in JESD22-B) December 1989 [Text-jd009][JDa10]JESD22-A108-B Temperature, Bias, and Operating Life高温环境条件下的工作寿命试验, (Revision of JESD22-A108-A) December 2000[JDa11]JESD22-A110-B Test Method A110-B Highly-Accelerated Temperature and Humidity Stress Test (HAST)高加速寿命试验, (Revision of Test Method A110-A) February 1999[Text-jd010][JDa12]JESD22-A113-B Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing非密封表贴器件在可靠性试验以前的预处理, (Revision of Test Method A113-A)March 1999 [Text-jd011][JDa13]JESD22-A118 Accelerated Moisture Resistance - Unbiased HAST不上电的高加速湿气渗透试验, December 2000 [Text-jd012][JDa14]JESD22-B106-B Test Method B106-B Resistance to Soldering Temperature for Through-Hole Mounted Devices插接器件的抗焊接温度试验, (Revision of Test MethodB106-A) February 1999 [Text-jd013][JDa15]EIA/JESD47 Stress-Test-Driven Qualification of Integrated Circuits集成电路施加应力的产品验收试验, July 1995 [Text-jd031][JDa16]JESD22-A104C Temperature Cycling, (Revision of JESD22-A104-B) May 2005 [Text-jd040]电应力和电测试试验[JDb1]JESD22-A114-B Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM)人体模型条件下的静电放电敏感度试验, (Revision of JESD22-A114-A) June 2000 [Text-jd014][JDb2]EIA/JESD22-A115-A Electrostatic Discharge (ESD) Sensitivity Testing Machine Model (MM)机器模型条件下的静电放电敏感度试验, (Revision of EIA/JESD22-A115) October1997 [Text-jd015][JDb3]JESD22-A117 Electrically Erasable Programmable ROM (EEPROM) Program/Erase Endurance and Data Retention Test EEPROM的擦涂和数据保存试验, January 2000[Text-jd016][JDb4]EIA/JESD78 IC Latch-Up Test集成电路器件闩锁试验, March 1997 [Text-jd017][JDb5]JESD22-C101-A Field-Induced Charged-Device Model Test Method forElectrostatic-Discharge-Withstand Thresholds of Microelectronic Components微电子器件在电荷感应模型条件下的抗静电放电试验, (Revision of JESD22-C101) June2000 [Text-jd018]机械应力试验[JDc1]JESD-22-B103-A Test Method B103-A Vibration, Variable Frequency振动和扫频试验(Revision of Test Method B103 Previously Published in JESD22-B) July 1989 [Text-jd019] [JDc2]JESD22-B104-A Test Method B104-A Mechanical Shock机械冲击(Revision of Test Method B104, Previously Published in JEDEC Standard No.22-B) September 1990[Text-jd020][JDc3]EIA/JESD22-B116 Wire Bond Shear Test Method焊线邦定的剪切试验方法, July 1998 [Text-jd021][JDc4]JESD22-B117 BGA Ball Shear BGA焊球的剪切试验, July 2000 [Text-jd022][JDc5]JESD22B113 Board Level Cyclic Bend Test Method for Interconnect Reliability Characterization of Components for Handheld Electronic Products, March 2006 [Text-jd038] [JDc6]JESD22-B111 Board Level Drop Test Method of Components for Handheld Electronic Products, July 2003 [Text-jd039]综合试验与测试[JDd1]JEDEC Standard No.22-A109 Test Method A109 Hermeticity密封性试验, July 1988 [Text-jd023][JDd2]JESD22-A120 Test Method for the Measurement of Moisture Diffusivity and Water Solubility in Organic Materials Used in Integrated Circuits集成电路器件中使用的有机材料水分扩散和水溶性测定试验方法, June 2001 [Text-jd024][JDd3]JESD22-B100-A Physical Dimensions物理尺寸的测量, (Revision of Test Method B100-Previously Published in JESD22-B) April 1990 [Text-jd025][JDd4]JESD22-B101 Test Method B101 External Visual外观检查, (Previously published in JESD22-B) September 1987 [Text-jd026][JDd5]EIA/JESD22-B102-C Solderability Test Method可焊性试验方法, September 1998 [Text-jd027][JDd6]EIA/JESD22-B105-B Test Method B105-B Lead Integrity器件管脚的完整性试验, (Revision of Test Method B105-A) January 1999 [Text-jd028][JDd7]EIA/JESD22-B107-A Test Method B107-A Marking Permanency图标的耐久性试验, (Revision of Test Method B107-Previously Published in JESD22-B) September 1995[Text-jd029][JDd8]JESD22-B108 Coplanarity Test for Surface-Mount Semiconductor Devices表贴半导体器件的共面性试验, November 1991 [Text-jd030]其它[JDe1]JEP113-B Symbol and Labels for Moisture-Sensitive Devices湿度敏感器件的符号和标识, (Revision of JEP113-A) May 1999 [Text-jd032][JDe2]EIA/JEP122 Failure Mechanisms and Models for Silicon Semiconductors Devices硅半导体器件的失效机理和模型, February 1996 [Text-jd033][JDe3]IPC/JEDEC J-STD-020A Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices针对非密封表贴半导体器件的湿度/回流焊敏感度分类和级别, April 1999 [Text-jd034][JDe4]IPC/JEDEC J-STD-033 Standard for Handling, Packing, Shipping and Use of Moisture/Reflow Sensitive Surface Mount Devices湿度/回流焊敏感标贴器件的处理、包装、运输和使用的标准, May 1999 [Text-jd035][JDe5]EIA/JEP103-A Suggested Product-Documentation Classifications and Disclaimers, (Revision of JEP103) July 1996 [Text-jd036][JDe6]IPC/JEDEC J-STD-020D.1 Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices针对非密封表贴半导体器件的湿度/回流焊敏感度分类和级别, Supersedes IPC/JEDEC J-STD-020D August 2007, March 2008 [Text-jd037]。