BAT63-07WE6811中文资料
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Jul-24-20021
BAT63-07WE6811
Silicon Schottky Diode
Low barrie diode for detectors up to GHz
frequencies
For high-speed switching applications
Zero bias detector diode
BAT63-07W
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypePackageConfigurationLS (nH)Marking
BAT63-07WE6811SOT343parallel pair1.6 63sMaximum Ratings
ParameterSymbolValueUnit
Diode reverse voltageV
R8V
Forward currentI
F100mA
Total power dissipation
T
S 103 °C P
tot100mW
Junction temperatureT
j150°C
Storage temperatureT
stg-55 ... 150
Thermal Resistance
ParameterSymbolValueUnit
Junction - soldering point1)R
thJS 470K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance元器件交易网www.cecb2b.com
Jul-24-20022BAT63-07WE6811Electrical Characteristics at T
A = 25°C, unless otherwise specified
ParameterSymbolValuesUnit
min.typ.max.DC Characteristics
Reverse voltage I
R = 100 µA V
R810-V
Forward voltage
I
F = 1 mAV
F-190300mVAC Characteristics
Diode capacitance
V
R = 0.2 V, f = 1 MHzC
T-0.650.85pF
Differential resistance
V
R = 0 V, f = 10 kHzR
0-30-k元器件交易网www.cecb2b.com
Jul-24-20023BAT63-07WE6811
Diode capacitance C
T = (V
R)
f = 1MHz
00.511.52V3
VR0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 pF1
CTForward current I
F = (V
F)TA = Parameter
00.10.20.30.40.50.60.70.8V1
VF-4 10 -3 10 -2 10 -1 10
A
IF
TA=125°C
TA=85°CTA=25°C
TA=-40°C
Forward current IF = (T
S)
0153045607590105120°C150
TS0 20 40 60 80 mA120
IFPermissible Puls Load R
thJS = (t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0 °C
tp1 10 2 10 3 10
mA
RthJS
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0元器件交易网www.cecb2b.com
Jul-24-20024BAT63-07WE6811
Permissible Pulse Load
I
Fmax/ I
FDC = (t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0 °C
tp0 10 1 10
mAIFmax/IFDC
D = 0
0.005
0.01
0.02
0.050.1
0.2
0.5Rectifier voltage V
out = (V
in)
R
L = Parameter
10 -1 10 0 10 1 10 2
10 3 mV
Vin-3 10 -2 10 -1 10 0 10 1 10 2 10 3 10
mV
Vout
RL=500k
200k
100k
50k
20kTestcircuit
D.U.T
R
INR
LC
L
1nF50ΩV
IV
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