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BAT68-04W中文资料

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Silicon Schottky Diodes• For mixer applications in the VHF / UHF range • For high-speed switching applications • Pb-free (RoHS compliant) package 1)•Qualified according AEC Q101BAT68BAT68-06BAT68-06WBAT68-07WBAT68-08SBAT68-04BAT68-04WESD (E lectro s tatic d ischarge) sensitive device, observe handling precaution!Type Package Configuration L S (nH)Marking BAT68 BAT68-04 BAT68-04W BAT68-06 BAT68-06W BAT68-07W BAT68-08SSOT23 SOT23 SOT323 SOT23 SOT323 SOT343 SOT363single series seriescommon anode common anode parallel pair parallel triple1.8 1.8 1.4 1.8 1.4 1.6 1.483s 84s 84s 86s 86s 87s 83s1Pb-containing package may be available upon special requestMaximum Ratings at T A = 25°C, unless otherwise specifiedParameter Symbol Value Unit Diode reverse voltage V R8V Forward current I F130mATotal power dissipationBAT68, T S≤ 77°CBAT68-04, BAT68-06, T S≤ 61°C BAT68-04W/-06W/-08S, T S≤ 92°C BAT68-07W, T S≤ 89°C P tot150150150150mWJunction temperature T j150°C Storage temperature T stg-55 (150)Thermal ResistanceParameter Symbol Value UnitJunction - soldering point1)BAT68BAT68-04, BAT68-06BAT68-04W-BAT68-06W, BAT68-08S BAT68-07W R thJS≤ 490≤ 590≤ 390≤ 410K/WElectrical Characteristics at T A = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.DC CharacteristicsBreakdown voltageI(BR) = 10 µAV(BR)8--VReverse currentV R = 1 VV R = 1 V, T A = 60 °C I R----0.11.2µAForward voltage I F = 1 mAI F = 10 mA V F-340318390340500mV1For calculation of R thJA please refer to Application Note Thermal ResistanceElectrical Characteristics at T A = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.AC CharacteristicsC T--1pF Diode capacitanceV R = 0 , f = 1 MHzR F--10ΩDifferential forward resistanceI F = 5 mA, f = 10 kHzDiode capacitance C T = ƒ (V R )f = 1MHzDifferential forward resistance r f = ƒ (I F )f = 10kHzReverse current I R= ƒ(V R )T A = ParameterForward current I F = ƒ (V F )T A = ParameterFVForward current I F = ƒ (T S) BAT68IFForward current I F = ƒ (T S)BAT68-04, BAT68-06IForward current I F = ƒ (T S)BAT68-04W, BAT68-06W, BAT68-08SIForward current I F = ƒ (T S)BAT68-07WIPermissible Puls Load R thJS = ƒ (t p )BAT68-04W, BAT68-06W10 10 10 10 K/WR t h JsPermissible Pulse Load I Fmax / I FDC = ƒ (t p )BAT68-04W, BAT68-06WI F m a x /I F DCPermissible Pulse Load I Fmax / I FDC = ƒ (t p )BAT68-07WI F m a x /I F DCPermissible Puls Load R thJS = ƒ (t p )BAT68-07W10 10 10 10 K/WR t h J SRectifier voltage V out = ƒ (V in) f = 900MHzR L = Parameter in kΩ3VTestcircuitEdition 2006-02-01Published byInfineon Technologies AG81726 München, Germany© Infineon Technologies AG 2007.All Rights Reserved.Attention please!The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (). WarningsDue to technical requirements components may contain dangerous substances.For information on the types in question please contact your nearestInfineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure ofsuch components can reasonably be expected to cause the failure of thatlife-support device or system, or to affect the safety or effectiveness of thatdevice or system.Life support devices or systems are intended to be implanted in the human body,or to support and/or maintain and sustain and/or protect human life. If they fail,it is reasonable to assume that the health of the user or other personsmay be endangered.。

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BAT68W中文资料

BAT68W中文资料

Diode capacitance
CT RF
VR = 1 V, f = 1 MHz
Differential forward resistance
IF = 5 mA
Forward current IF = f (TA*;TS) BAT 68W
200 mA
Forward current IF = f (TA*;TS) BAT 68-04W, -05W, -06W
元器件交易网
BAT 68W Silicon Schottky Diodes
Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching
BAT 68-04W
Package 3 = K1/A2 SOT-323 3 = K1/K2 SOT-323 3 = A1/A2 SOT-323 3=K SOT-323
Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, BAT68W Symbol Values 8 130 150 150 150 - 65 ... + 150 - 65 ... + 150 ≤ 435 ≤ 550 ≤ 355 390 K/W °C Unit V mA mW
IF
160 140
TS TA
120 100 80 60 40 20 0 0 20 40 60 80 100 120 °C 150 TA ,TS
TA
TS
Semiconductor Group
2
Dec-20-1996
亿佰特(Ebyte)-E18-2G4U04B产品使用手册-------1

亿佰特(Ebyte)-E18-2G4U04B产品使用手册-------1

第一章概述1.1简介E18-2G4U04B是一款体积极小的USB接口2.4GHz无线模块，引脚间距1.27mm。

该系列模块目前已经稳定量产，并适用于多种应用场景（尤其智能家居）。

E18-2G4U04B采用美国德州仪器（TI）公司原装进口CC2531射频芯片，芯片内部集成了8051单片机及无线收发器，集成PA+LNA，极大的扩展通信距离、提升通信稳定性，出厂自带固件它基于ZigBee协议实现的串口数据透传，在串口数据无线遗传的基础上，我们还加入了一些特殊功能，包括ADC采样，远程PWM波输出控制，远程GPIO控制。

目前出厂不自带程序，用户可自行烧录程序。

1.2特点功能⚫实测通信距离可达200m；⚫最大发射功率2.5mW，软件多级可调；⚫内置ZigBee协议栈；⚫出厂自带自组网固件，到手即用；⚫支持ADC、PWM、GPIO等外设直驱；⚫支持UART透传，简单易用；⚫内置32.768kHz时钟晶体振荡器；⚫支持全球免许可ISM2.4GHz频段；⚫内置低功耗8051内核处理；⚫丰富的资源，256KB FLASH，8KB RAM；⚫支持2.0V~3.6V/USB供电，大于3.3V供电均可保证最佳性能；⚫工业级标准设计，支持-40~85°C长时间使用；⚫板载PCB天线，自带天线无需再外接天线。

1.3应用场景⚫智能家居以及工业传感器等；⚫安防系统、定位系统；⚫无线遥控，无人机；⚫无线游戏遥控器；⚫医疗保健产品；⚫无线语音，无线耳机；⚫汽车行业应用。

第二章规格参数2.1极限参数2.2工作参数第三章械尺寸与引脚定义⚫关于模块的引脚定义、软件驱动及通信协议详见TI官方《CC2531Datasheet》。

第四章使用方法4.1.烧录程序模块内置8051单片机，程序下载可使用CC Debugger4.2.TI Packet Sniffer出厂固件支持TI Packet Sniffer抓包软件到手即可进行抓包测试，使用Packet Sniffer可以快速进行协议分析。

BA6897资料

BA6897资料


BA6897S/BA6897FP
age. In each case, only the drivers are muted. During muting, the output pins remain at the internal bias voltage, roughly (VCC–VF) / 2. (5) Be sure to connect the IC to a 0.1µF bypass capacitor to the power supply, at the base of the IC. (6) The radiating fin is connected to the packages internal GND, but should also be connected to an external ground. (7) The capacitor between regulator output (pin 6) and GND also serves to prevent oscillation of the IC, so select one with good temperature characteristics.
BA6897S/BA6897FP
397
元器件交易网 Optical disc ICs
FCircuit operation (1) Driver Inputs to the IC are the focus tracking error signal from the servo preamplifier and the control signal from the motor.
391
元器件交易网 Optical disc ICs
FBlock diagram
BAS70-04LT1中文资料

BAS70-04LT1中文资料

ANODE 1 CATHODE 2 3 CATHODE/ANODE
BAS70-04LT1
Motorola Preferred Device
70 VOLTS SCHOTTKY BARRIER DIODES
3 1 2
CASE 318 – 08, STYLE 11 SOT– 23 (TO – 236AB)
The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad™. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.