IMT1A中文资料

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EMT1 / UMT1N / IMT1A Transistors

Rev.A 1/3 General Purpose Transistor

(Isolated Dual Transistors)

EMT1 / UMT1N / IMT1A

zFeatures 1) Two 2SA1037AK chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference.

zStructure Epitaxial planar type PNP silicon transistor

zEquivalent circuit EMT1 / UMT1NIMT1A

Tr2

Tr1

(3)(2)(1)

(4)(5)(6)Tr2

Tr1

(4)(5)(6)

(3)(2)(1) The following characteristics apply to both Tr1 and Tr2.

zAbsolute maximum ratings (Ta = 25°C) ParameterSymbolVCBO

VCEO

VEBO

IC

TjTstgPCEMT1, UMT1NIMT1ALimits−60−50−6−150150−55 to +150

150 (TOTAL)300 (TOTAL)

UnitVVVmA

°C°C

mW∗1

∗2

Collector-base voltageCollector-emitter voltageEmitter-base voltageCollector current

Junction temperatureStorage temperature

Collectorpower dissipation

∗1 120mW per element must not be exceeded.∗2 200mW per element must not be exceeded.

zExternal dimensions (Unit : mm) ROHM : EMT6EMT1ROHM : UMT6EIAJ : SC-88UMT1NROHM : SMT6EIAJ : SC-74IMT1AAbbreviated symbol : T1Abbreviated symbol : T1Abbreviated symbol : T10.221.21.6

(1)

(2)(5)(3)(6)(4)

0.130.5

0.50.51

.

01.6

Each lead has same dimensions

0to0.1(6)2.01.3

0.90.

1

5

0.7

0.1Min.

2.10.650.21.25(1)

0.65(4)(3

)

(2)(5)

Each lead has same dimensions(6)(5)(4)

0.3to0.60.15

0.3

1.10.8

0to0.1

(3)2.81.6

1.92.

90

.

95

(2)0.9

5

(1)

Each lead has same dimensions

元器件交易网www.cecb2b.comEMT1 / UMT1N / IMT1A Transistors

Rev.A 2/3 zElectrical characteristics (Ta = 25°C) ParameterSymbolBVCBOBVCEOBVEBOICBOIEBOhFEVCE(sat)fTCobMin.−60−50−6−−120−−−−−−−−−−1404−−−−0.1−0.1560−0.5−5VIC = −50µAIC = −1mAIE = −50µAVCB = −60VVEB = −6VVCE = −6V, IC = −1mAVCE = −12V, IE = 2mA, f = 100MHzIC/IB = −50mA/−5mAVCB = −12V, IE = 0A, f = 1MHzVVµAµA−VMHzpFTyp.Max.UnitConditionsCollector-base breakdown voltageCollector-emitter breakdown voltageEmitter-base breakdown voltageCollector cutoff currentEmitter cutoff current

DC current transfer ratioCollector-emitter saturation voltage

Transition frequencyOutput capacitance

zPackaging specifications PackageTapingCodeUMT1NEMT1TypeIMT1ATR3000T2R8000−−−T1083000−−−Basic ordering unit (pieces)

zElectrical characteristic curves

-0.2COLLECTOR CURRENT : Ic (mA)-50-20-10-5-2-1-0.5-0.2-0.1-0.4-0.6-0.8-1.0-1.2-1.4-1.6VCE = −6VBASE TO EMITTER VOLTAGE : VBE (V)Fig.1 Grounded emitter propagation characteristicsTa = 100°C25°C−40°C -0.4-4-8-1.20-2-6-10-0.8-1.6-2.0-3.5µA-7.0-10.5-14.0-17.5-21.0-24.5-28.0-31.5

IB = 0

Ta = 25°C-35.0COLLECTOR CURRENT : IC (mA)COLLECTOR TO EMITTER VOLTAGE : VCE (V)Fig.2 Grounded emitter output characteristics ( Ι ) -40-80-5-3-4-2-1-20-60-1000IB = 0Ta = 25°CCOLLECTOR CURRENT : IC (mA)

COLLECTOR TO EMITTER VOLTAGE : VCE

(V)

Fig.3 Grounded emitter output characteristics ( ΙΙ )

-50µA-100-150-200-250-500-450-400-350-300

50020010050-0.2-0.5-1-2-5-10-20-50-100

DC CURRENT GAIN : hFETa = 25°CVCE = -5V-3V-1V

COLLECTOR CURRENT : IC

(mA)

Fig.4 DC current gain vs. collector current ( Ι )

50020010050

-0.2-0.5-1-2-5-10-20-50-100DC

C

URRENT GAIN : hFE

COLLECTOR CURRENT : IC

(mA)

Fig.5 DC current gain vs. collectorcurrent ( ΙΙ )

VCE = -6V

Ta = 100°C-40°C25°C

-0.1-0.2-0.5-1-2-5-10-20-50-100

-1-0.5

-0.2

-0.05

Ta = 25°C

COLLECTOR SATURATION VOLTAGE : VCE(sat) (

V)

COLLECTOR CURRENT : IC

(mA)

Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι )

IC/IB = 50

2010

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