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ER1A中文资料

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ER1A THRU ER1J
SURFACE MOUNT SUPERFAST RECTIFIER
VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere
FEATURES
l For surface mounted applications l Low profile package
l Built-in strain relief l Easy pick and place
l Superfast recovery times for high efficiency l Plastic package has Underwriters Laboratory Flammability Classification 94V-O l Glass passivated junction l High temperature soldering: 260¢J /10 seconds at terminals MECHANICAL DA TA
Case: JEDEC DO-214AA molded plastic Terminals: Solder plated, solderable per MIL-STD-750, Method 2026Polarity: Indicated by cathode band Standard packaging: 12mm tape (EIA-481)Weight: 0.003 ounce, 0.093 gram
MAXIMUM RA TINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¢J ambient temperature unless otherwise specified.Single phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.SYMBOLS ER1A ER1B ER1C ER1D ER1E ER1G ER1J
UNITS
Maximum Recurrent Peak Reverse Voltage V RRM
50100150200300400600Volts Maximum RMS Voltage
V RMS
3570105140210280420Volts Maximum DC Blocking Voltage
V DC
50100150200300400600Volts Maximum Average Forward Rectified Current,at T L =100¢J
I (AV) 1.0Amps Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load(JEDEC method)I FSM 30.0
Amps Maximum Instantaneous Forward Voltage at 1.0A V F
0.95
1.25
1.7
Volts Maximum DC Reverse Current T A =25¢J At Rated DC Blocking Voltage T A =100¢J I R 5.0100£g A Maximum Reverse Recovery Time (Note 1)T RR 35.0n S Typical Junction capacitance (Note 2)C J 10.0P F Typical Thermal Resistance (Note 3)
R £K JL 34
¢J /W Operating and Storage Temperature Range
T J ,T STG
-50 to +150
¢J
NOTES:
1. Reverse Recovery T est Conditions: I F =0.5A, I R =1.0A, Irr=0.25A
2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts
3. 8.0mm 2 (.013mm thick) land areas
SMB/DO-214AA
RATING AND CHARACTERISTIC CURVES ER1A THRU ER1J
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. Source Impedance = 50 Ohms
50 ns/cm
LEAD TEMPERA TURE, ¢J
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND
TEST CIRCUIT DIAGRAM
Fig. 2-MAXIMUM AVERAGE FORWARD CURRENT RATING
% OF PIV. VOLTS INSTANTANEOUS FORWARD VOLTAGE VOLTS
Fig. 3-TYPICAL REVERSE CHARACTERISTICS
Fig. 4-TYPICAL FORWARD CHARACTERISTICS
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE, VOLTS
Fig. 5-MAXIMUM NON-REPETITIVE SURGE
CURRENT
Fig. 6-TYPICAL JUNCTION CAPACITANCE。

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2N5551中文资料(fairchild)中文数据手册「EasyDatasheet - 矽搜」

2N5551中文资料(fairchild)中文数据手册「EasyDatasheet - 矽搜」

集电极电流
50 VCB = 100V
10
10
10
1β
100 Co
o
125 C
0.1
o
-40 Co
25 Co
75 C
- CCEO(SALT)LECTOR-EMITTER VOLTAGE [V]
0.01
V
1
10
100
IC- COLLECTOR CURRENT [mA]
Figure 2. Collector-Emitter Saturation Voltage vs.
芯片中文手册,看全文,戳
2N5551 / MMBT5551 NPN通用放大器
2013年6月
描写
该装置是专为通用高压放大器和气体放电的显示驱动程序.
2N5551
TO-92
MMBT5551
3
2
1 SOT-23
Marking: 3S 1. Base 2. Emitter 3. Collector
MMBT5551
350 2.8
357
Units
mW mW/°C °C/W °C/W
2
芯片中文手册,看全文,戳
电气特性
(4)
价值观是在T 符
A = 25°C除非另有说明. 参数
断特性
V（BR）CEO 集电极 - 发射极击穿电压 V（BR）CBO 集电极基击穿电压 V （BR）EBO 发射极基极击穿电压
Value
160 180
6 600 -55到+150
2N5551 / MMBT5551 - NPN通用放大
器
Units
V V V mA °C
热特性
价值观是在T
74ALVCH32973ZKER中文资料

74ALVCH32973ZKER中文资料


(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at /sc/package.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
SCES436C – APRIL 2003 – REVISED SEPTEMBER 2004
LOGIC DIAGRAM (POSITIVE LOGIC)
2DIR J4
T4 2LOE
2LE T3
2A1 J1
One of Eight Channels C1
1D
J3 2TOE J6
2Q1 J5 2B1
SCES436C – APRIL 2003 – REVISED SEPTEMBER 2004
LOGIC DIAGRAM (POSITIVE LOGIC)
A3 1TOE
One of Eight Channels C1
1D
A6 1Q1
A5 1B1
To Seven Other Channels
3
元器件交SN易74网 16-BIT BUS TRANSCEIVER AND TRANSPARENT D-TYPE LATCH WITH EIGHT INDEPENDENT BUFFERS
ER306中文资料(Pan Jit)中文数据手册「EasyDatasheet - 矽搜」

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最大经常峰值反向电压
最大RMS电压
最大直流阻断电压
最大正向平均
当前.375"设计（9.5mm）引线长度
在T A=55 ¢J
峰值正向浪涌电流,I 8.3ms单半正弦波叠加
FM （浪涌）：
在额定负荷（JEDEC方法）
最大正向电压在3.0A DC
反向电流最大DC 在额定阻断电压DC 反向电流最大DC在 额定阻断电压DCT
0.1
TJ = 25 ¢J PULSE WIDTH = 300uS
2% DUTY CYCLE 0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
正向电压,伏
图. 4正向电流降额曲线
100
TJ = 25 ¢J
f = 1.0MHz
Vsig = 50mVp-p
50 100
结电容,P1F0
4.0
3.0
(10)-A2M.0P (10)-AAV
.375" 9.5mm LENGTH
平均正向电1.0流
0 50 75 100 125 150 175 200
环境温度,
¢J
图. 2,最大正向平均
电流额定值
100 ER300 ~ ER302
ER303 ~ ER304 10
安培
1
瞬时正向电流,
ER306
可燃性分类94V-O利用
阻燃环氧模塑料
DO-201AD
机械数据
案例：模压塑料,DO-201AD 终端：轴向引线,焊符合MIL-STD-202,
方法208
极性：颜色频带端为负极 安装位置：额定值 ,电器性能 在25额定值 ¢J 环境温度,除非另有规定.
电阻性或电感性负载,60赫兹.
ER100资料

ER100资料

ER100 THRU ER106SUPERFAST RECOVERY RECTIFIERSVOLTAGE - 50 to 600 Volts CURRENT - 1.0 AmpereFEATURESl Superfast recovery times-epitaxial construction l Low forward voltage, high current capabilityl Exceeds environmental standards of MIL-S-19500/228l Hermetically sealed l Low leakagel High surge capabilityl Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound MECHANICAL DA TACase: Molded plastic, DO-41Terminals: Axial leads, solderable to MIL-STD-202, Method 208Polarity: Color Band denotes cathode end Mounting Position: Any Weight: 0.012 ounce, 0.3 gramMAXIMUM RA TINGS AND ELECTRICAL CHARACTERISTICSRatings at 25¢J ambient temperature unless otherwise specified.Resistive or inductive load, 60Hz.ER100ER101ER101AER102ER103ER104ER106UNITS Maximum Recurrent Peak Reverse Voltage 50100150200300400600V Maximum RMS Voltage3570105140210320420V Maximum DC Blocking Voltage 50100150200300400600V Maximum Average ForwardCurrent .375"(9.5mm) lead length at T A =55¢J1.0APeak Forward Surge Current, I FM (surge):8.3ms single half sine-wave superimposed on rated load(JEDEC method)30.0AMaximum Forward Voltage at 1.0A DC.951.251.7V Maximum DC Reverse Current at Rated DC Blocking Voltage 5.0£g A Maximum DC Reverse Current atRated DC Blocking Voltage T A =125¢J 150£g A Maximum Reverse Recovery Time(Note 1)35.0nsTypical Junction capacitance (Note 2)17P FTypical Junction Resistance(Note 3) R £K JA 50¢J /W Operating and Storage T emperature Range T J-55 to +150¢JNOTES:1. Reverse Recovery T est Conditions: I F =.5A, I R =1A, Irr=.25A2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC3. Thermal resistance from junction to ambient and from junction to lead length 0.375”(9.5mm) P .C.B. mountedDO-41RATING AND CHARACTERISTIC CURVES ER100 THRU ER106NOTE:1.Rise Time = 7ns max.Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. Source Impedance = 50 Ohms50 ns/cmFig. 1-REVERSE RECOVERY TIME CHARACTERISTIC ANDTEST CIRCUIT DIAGRAMFig. 2-MAXIMUM NON-REPEITIVESURGE CURRENTAMBIENT TEMPERATURE, ¢JFig. 3-MAXIMUM AVERAGE FORWARD CURRENT RATINGINSTANTANEOUS FORWARD VOLTAGE VOLTSFig. 4-FORWARD CURRENTDERATING CURVE% OF PIV, VOLTSREVERSE VOLTAGE, VOLTSFig. 5-TYPICAL REVERSE CHARACTERISTICSFig. 6-TYPICAL JUNCTIONCAPACITANCE。