HB54A2569F1-A75B中文资料

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HB54A2569F1-A75B/B75B/10B HB54A5129F2-A75B/B75B/10B
256 MB Registered DDR SDRAM DIMM 32-Mword × 72-bit, 1-Bank Module (9 pcs of 32 M × 8 Components) 512 MB Registered DDR SDRAM DIMM 64-Mword × 72-bit, 2-Bank Module (18 pcs of 32 M × 8 Components)
DM1/DQS10 153 VCC DQ14 DQ15
1
154 155 156
CKE1 (NC)* 157 VCCQ NC DQ20 A12 VSS DQ21 158 159 160 161 162 163
Preliminary Data Sheet E0091H20 3
HB54A2569F1/HB54A5129F2-A75B/B75B/10B
Features
• 184-pin socket type package (dual lead out) Outline: 133.35 mm (Length) × 43.18 mm (Height) × 4.00 mm (Thickness) Lead pitch: 1.27 mm
Preliminary: The specifications of this device are subject to change without notice. Please contact your nearest Elpida Memory, Inc. regarding specifications. Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
DM2/DQS11 165 VCC DQ22 A8 DQ23 VSS A6 DQ28 DQ29 VCCQ 166 167 168 169 170 171 172 173 174
DM3/DQS12 175 A3 DQ30 VSS DQ31 CB4 CB5 VCCQ CK0 CK0 176 177 178 179 180 181 182 183 184
Notes: 1. 143 MHz operation at CAS latency = 3.5. 2. 100 MHz operation at CAS latency = 3.0. 3. 125 MHz operation at CAS latency = 3.5.
Preliminary Data Sheet E0091H20 2
Pin name VREF DQ0 VSS DQ1 DQS0 DQ2 VCC DQ3 NC RESET VSS DQ8 DQ9 DQS1 VCCQ NC NC VSS DQ10 DQ11 CKE0 VCCQ DQ16 DQ17 DQS2

Pin No. 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71
1. The HB54A2569F1 assign “NC”.
Preliminary Data Sheet E0091H20 4
HB54A2569F1/HB54A5129F2-A75B/B75B/10B
Pin Description
Pin name A0 to A12 Function Address input Row address Column address BA0, BA1 DQ0 to DQ63 CB0 to CB7 RAS CAS WE S0, S1 CKE0, CKE1 CK0 CK0 DQS0 to DQS8 DM0 to DM8/DQS9 to DQS17 SCL SDA SA0 to SA2 VCC VCCQ VCCSPD VREF VSS VCCID RESET NC Bank select address Data input/output Check bit (Data input/output) Row address strobe command Column address strobe command Write enable Chip select Clock enable Clock input Differential clock input Input and output data strobe Input mask Clock input for serial PD Data input/output for serial PD Serial address input Power for internal circuit Power for DQ circuit Power for serial EEPROM Input reference voltage Ground VCC indentication flag Reset pin (forces register inputs low) No connection A0 to A12 A0 to A9
Pin name DQS8 A0 CB2 VSS CB3 BA1 DQ32 VCCQ DQ33 DQS4 DQ34 VSS BA0 DQ35 DQ40 VCCQ WE DQ41 CAS VSS DQS5 DQ42 DQ43 VCC NC
Pin No. 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117
• • • •
Ordering Information
Type No. HB54A2569F1-A75B* HB54A2569F1-B75B* 2 HB54A2569F1-10B* 2 HB54A5129F2-A75B* 1 HB54A5129F2-B75B* 2 HB54A5129F2-10B* 3
HB54A2569F1/HB54A5129F2-A75B/B75B/10B
Pin Arrangement
Front side 1 pin 52 pin 53 pin 92 pin
93 pin Back side
144 pin 145 pin 184 pin
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Pin No. 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 Note: Pin name VSS A9 DQ18 A7 VCCQ DQ19 A5 DQ24 VSS DQ25 DQS3 A4 VCC DQ26 DQ27 A2 VSS A1 CB0 CB1 VCC Pin No. 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 Pin name DQ48 DQ49 VSS NC NC VCCQ DQS6 DQ50 DQ51 VSS VCCID DQ56 DQ57 VCC DQS7 DQ58 DQ59 VSS NC SDA SCL Pin No. 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 Pin name A11 Pin No. 164 Pin name VCCQ DQ52 DQ53 NC VCC DM6/DQS15 DQ54 DQ55 VCCQ NC DQ60 DQ61 VSS DM7/DQS16 DQ62 DQ63 VCCQ SA0 SA1 SA2 VCCSPD
E0091H20 (Ver. 2.0) Preliminary Mar. 30, 2001 Description
The HB54A2569F1, HB54A5129F2 are Double Data Rate (DDR) SDRAM Module, mounted 256-Mbit DDR SDRAM (HM5425801BTT) sealed in TSOP package, and 1 piece of serial EEPROM (2-kbit EEPROM) for Presence Detect (PD). The HB54A2569F1 is organized as 32M × 72 × 1-bank mounted 9 pieces of 256-Mbit DDR SDRAM. The HB54A5129F2 is organized as 32M × 72 × 2-bank mounted 18 pieces of 256-Mbit DDR SDRAM. Read and write operations are performed at the cross points of the CK and the CK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. An outline of the products is 184-pin socket type package (dual lead out). Therefore, it makes high density mounting possible without surface mount technology. It provides common data inputs and outputs. Decoupling capacitors are mounted beside each TSOP on the module board.