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2SA1303中文资料

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∗hFERank O(50to100), P(70to140), Y(90to180)

17Silicon PNP Epitaxial Planar Transistor(Complement to type 2SC3284)Application: Audio and General Purpose

Symbol

VCBOVCEOVEBOICIBPCTj

Tstg2SA1303

–150

–150

–5

–14

–3

125(Tc=25°C)

150

–55 to +150Unit

V

V

V

A

A

W

°C

°CsAbsolute maximum ratings sElectrical Characteristics

sTypical Switching Characteristics (Common Emitter)Symbol

ICBOIEBOV(BR)CEOhFEVCE(sat)fTCOB2SA1303

–100max–100max–150min50min–2.0max50typ400typUnit

µA

µA

V

V

MHz

pFConditions

VCB=–150V

VEB=–5V

IC=–25mA

VCE=–4V, IC=–5A

IC=–5A, IB=–0.5A

VCE=–12V, IE=2A

VCB=–10V, f=1MHz

VCC(V)

–60RL(Ω)

12IC(A)–5VBB2(V)

5IB2(mA)

500ton(µs)

0.25typtstg(µs)

0.85typtf(µs)

0.2typIB1(mA)

–500LAPT2SA1303

(Ta=25°C)(Ta=25°C)

IC–VCE Characteristics (Typical)

hFE–IC Characteristics (Typical)

Safe Operating Area (Single Pulse)hFE–IC Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)

Pc–Ta Derating00–4–8–12

–1–2–3–4Collector-Emitter Voltage VCE(V)Collector Current IC(A)

–50mA–100mA

IB=–20mA–600mA

–700mA–500mA–400mA–300mA

–200mA

–150mA

0–3

–2

–1

0–0.2–0.4–1.0–0.6–0.8Base Current IB(A)Collector-Emitter Saturation Voltage VCE(sat)(V)

IC=–10A

–5A

–0.02–0.1–1–0.5–10–5–142050100200

Collector Current IC(A)DC Current Gain hFE(VCE=–4V)

Typ

–3–10–100–200–0.2–1

–0.5–10–40

–5

Collector-Emitter Voltage VCE(V)Collector Current IC(A)

Without HeatsinkNatural CoolingDC10ms1ms100ms

0.020.1110020406080

Cut-off Frequency fT(MHZ)(VCE=–12V)

Emitter Current IE(A)Typ0.113

0.5

11010010002000Time t(ms)Transient Thermal Resistance θj-a(˚C/W)θj-a–t Characteristics

fT–IE Characteristics (Typical)(VCE=–4V)

–0.02–0.1–0.5–1–5–10–143050100200

Collector Current IC(A)DC Current Gain hFE125˚C

25˚C

–30˚C

130

100

50

3.500255075100125150Ambient Temperature Ta(˚C)Maximum Power Dissipation PC(W)

With Infinite heatsink

Without HeatsinkIC–VBE Temperature Characteristics (Typical)

0–14

–10

–5

0–2–1Base-Emittor Voltage VBE(V)Collector Current IC(A)(VCE=–4V)

125˚C (Case Temp)

25˚C (Case Temp)

–30˚C (Case Temp)VBB1(V)

–10External DimensionsMT-100(TO3P)

15.6±0.49.6

19.9±0.34.02.05.0±0.21.8

ø3.2±0.1

2

31.05+0.2-0.120.0min

4.0max

BE5.45±0.15.45±0.1C4.8±0.2

0.65+0.2-0.1

1.42.0±0.1

ab

Weight : Approx 6.0ga. Type No.b. Lot No.元器件交易网www.cecb2b.com

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2SC3303中文资料

2SC3303中文资料

2SC3303

2006-11-09 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC3303

High Current Switching Applications

DC-DC Converter Applications

• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (I

C = 3 A)

• High speed switching time: tstg = 1.0 μs (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating

Unit Collector-base voltage V

CBO 100 V

Collector-emitter voltage V

CEO 80 V

Emitter-base voltage V

EBO 7 V

DC I

C 5

Collector current

Pulse I

CP 8 A

Base current I

B 1 A

Ta = 25°C 1.0

Collector power

dissipation

Tc = 25°C P

C

20 W

Junction temperature T

j 150 °C

Storage temperature range T

stg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

2SA1386A中文资料

2SA1386A中文资料

∗hFERank O(50to100), P(70to140), Y(90to180)

18Silicon PNP Epitaxial Planar Transistor(Complement to type 2SC3519/A)Application: Audio and General PurposeSymbolVCBOVCEOVEBOICIBPCTjTstg–5–15–4130(Tc=25°C)150–55 to +150UnitVVVAAW°C°CsAbsolute maximum ratings sElectrical Characteristics

sTypical Switching Characteristics (Common Emitter)SymbolICBOIEBOV(BR)CEOhFEVCE(sat)fTCOB2SA1386–100max–160–160minUnitµAVµAVVMHzpFConditionsVCB=VEB=–5VIC=–25mAVCE=–4V, IC=–5AIC=–5A, IB=–0.5A VCE=–12V, IE=2AVCB=–10V, f=1MHzLAPT2SA1386/1386A(Ta=25°C)(Ta=25°C)

VCC(V)–40RL(Ω) 4IC(A)–10VBB2(V) 5IB2(A)1ton(µs)0.3typtstg(µs)0.7typtf(µs)0.2typIB1(A) –1VBB1(V) –102SA1386A–100max–180–180min–100max50min∗–2.0max40typ500typIC–VCE Characteristics (Typical)

hFE–IC Characteristics (Typical)

Safe Operating Area (Single Pulse)hFE–IC Temperature Characteristics (Typical)IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)

2SA1013三极管(TO-92MOD)

2SA1013三极管(TO-92MOD)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1013 TRANSISTOR (PNP) FEATURE y High Voltage:VCEO=-160V y Large Continuous Collector Current Capability y Complementary to 2SC2383 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 0.9 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC=- 100μA , IE=

0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=

0 -160 V Emitter-base breakdown voltage V(BR)EBO IE= -10μA, IC=

2SK3030资料

2SK3030资料

1Power F-MOS FETsunit: mm2SK3030 (Tentative)Silicon N-Channel Power F-MOS FETsFeaturesqAvalanche energy capacity guaranteedqHigh-speed switchingqLow ON-resistanceqNo secondary breakdownqLow-voltage driveqHigh electrostatic breakdown voltagesApplicationsqContactless relayqDiving circuit for a solenoidqDriving circuit for a motorqControl equipmentqSwitching power supplysElectrical Characteristics (TC = 25°C)ParameterDrain to Source cut-off currentGate to Source leakage currentDrain to Source breakdown voltageGate threshold voltageDrain to Source ON-resistanceForward transfer admittanceDiode forward voltageInput capacitance (Common Source)Output capacitance (Common Source)Reverse transfer capacitance (Common Source)Turn-on time (delay time)Rise timeFall timeTurn-off time (delay time)Thermal resistance between channel and caseThermal resistance between channel and atmosphereSymbolIDSSIGSSVDSSVthRDS(on)1RDS(on)2| Yfs |VDSFCissCossCrsstd(on)trtftd(off)Rth(ch-c)Rth(ch-a)ConditionsVDS = 80V, VGS = 0VGS = ±20V, VDS = 0ID = 1mA, VGS = 0VDS = 10V, ID = 1mAVGS = 10V, ID = 4AVGS = 4V, ID = 4AVDS = 10V, ID = 4AIDR = 8A, VGS = 0VDS = 10V, VGS = 0, f = 1MHzVDD = 30V, ID = 4AVGS = 10V, RL = 7.5Ωmin10013typ1501706290110301540190860max10±102.5230260−1.512.5125UnitµAµAVVmΩmΩSVpFpFpFnsnsnsns°C/W°C/WsAbsolute Maximum Ratings (TC = 25°C)ParameterDrain to Source breakdown voltageGate to Source voltageDrain currentAvalanche energy capacityAllowable powerdissipationChannel temperatureStorage temperatureDCPulseTC = 25°CTa = 25°CSymbolVDSSVGSSIDIDPEAS*PDTchTstgRatings100±20±8±163.2101150−55 to +150UnitVVAAmJW°C°C*L = 0.1mH, IL = 8A, 1 pulse6.5±0.15.3±0.14.35±0.14.6±0.12.3±0.10.75±0.11230.93±0.12.5±0.10.8max1.0±0.27.3±0.11.8±0.12.3±0.10.5±0.10.5±0.10.1±0.051.0±0.11: Gate2: Drain3: SourceU Type PackageInternal ConnectionGDS元器件交易网