2SA1244中文资料
- 格式：pdf
- 大小：169.61 KB
- 文档页数：5
V
―
60
― MHz
― 170 ―
pF
Turn-on time Switching time Storage time
ton
OUTPUT ―
0.1
―
20 μs INPUT IB2
IB1 10 Ω
tstg
IB2
IB1
―
1.0
―
μs
VCC = −30 V
Fall time
tf
−IB1 = IB2 = 0.15 A,
50 × 50 × 0.8 mm (3) No heat sink
16
12
8
4 (2) (3)
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Collector current IC (A)
4
2006-11-09
2SA1244
RESTRICTIONS ON PRODUCT USE
−20 −40
−80
−150
−200
−0.6
−100
−300 −0.4
−400
−500 −0.2
0
0
−1
−2
−3
−4
−5
−6
−7
Collector current IC (A)
Collector-emitter voltage VCE (V)
DC current gain hFE
1000 500 300
DUTY CYCLE ≤ 1%
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
―
0.1
―
A1244
Characteristics indicator
Part No. (or abbreviation code)
Lot No.
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
20
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
−60
V
−50
V
−5
V
−5
A
−1
A
1.0 W
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Symbol
Test Condition
VCE (sat) – IC
−2 Common emitter
−1
IC/IB = 20
−0.5 −0.3
−0.1
Tc = 100°C
−0.05
25
−55
−0.03
−0.03
−0.1
−0.3
−1
−3
−10
Collector current IC (A)
3
2006-11-09
Base-emitter saturation voltage VBE (sat) (V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC operation Tc = 25°C
1 ms* 10 ms*
−1
−0.5 −0.3
−0.1
−0.05 −0.03
*: Single nonrepetitive pulse Tc = 25°C
Curves must be derated linearly
with increase in temperature.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2006-11-09
Collector current IC (A)
IC – VCE
−8
Common emitter −80 Tc = 25°C
−6
−70
−60
−50
VBE (sat) – IC
−10
Common emitter −5
IC/IB = 20 −3
−1
−0.5 −0.3
Tc = −55°C
25 100
−0.1
−0.03
−0.1
−0.3
−1
−3
−10
Collector current IC (A)
Safe Operating Area
−10
IC max (pulsed)* −5 −3 IC max (continuous)
100 50
hFE – IC
Common emitter VCE = −1 V
Tc = 100°C 25 −55
20
−0.03
−0.1
−0.3
−1
−3
−10
Collector current IC (A)
Collector-emitter saturation voltage VCE (sat) (V)
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
