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IRLML2803

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IRLML2803

Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET Power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.A customized leadframe has been incorporated into thestandard SOT-23 package to produce a HEXFET PowerMOSFET with the industry's smallest footprint. Thispackage, dubbed the Micro3, is ideal for applicationswhere printed circuit board space is at a premium. The lowprofile (<1.1mm) of the Micro3 allows it to fit easily intoextremely thin application environments such as portable

electronics and PCMCIA cards.VDSS = 30VRDS(on) = 0.25ΩHEXFET® Power MOSFET

Description

4/28/03lGeneration V TechnologylUltra Low On-ResistancelN-Channel MOSFETlSOT-23 FootprintlLow Profile (<1.1mm)lAvailable in Tape and ReellFast SwitchingSDG

Micro3Parameter Max. UnitsID @ TA = 25°CContinuous Drain Current, VGS @ 10V1.2ID @ TA = 70°CContinuous Drain Current, VGS @ 10V0.93 AIDMPulsed Drain Current 󰀂7.3PD @TA = 25°CPower Dissipation540 mWLinear Derating Factor4.3 mW/°CVGSGate-to-Source Voltage ± 20 Vdv/dtPeak Diode Recovery dv/dt 󰀃5.0 V/nsTJ, TSTGJunction and Storage Temperature Range-55 to + 150 °CAbsolute Maximum Ratings

Parameter Typ.Max.UnitsRθJAMaximum Junction-to-Ambient 󰀁󰀸󰀸󰀸230Thermal Resistance°C/WPD - 91258DIRLML2803ParameterMin.Typ.Max.Units ConditionsV(BR)DSSDrain-to-Source Breakdown Voltage30󰀸󰀸󰀸󰀸󰀸󰀸VVGS = 0V, ID = 250µA∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient󰀸󰀸󰀸0.029󰀸󰀸󰀸V/°CReference to 25°C, ID = 1mA󰀸󰀸󰀸󰀸󰀸󰀸0.25VGS = 10V, ID = 0.91A 󰀄󰀸󰀸󰀸󰀸󰀸󰀸0.40VGS = 4.5V, ID = 0.46A 󰀄VGS(th)Gate Threshold Voltage1.0󰀸󰀸󰀸󰀸󰀸󰀸VVDS = VGS, ID = 250µAgfsForward Transconductance0.87󰀸󰀸󰀸󰀸󰀸󰀸SVDS = 10V, ID = 0.46A󰀸󰀸󰀸󰀸󰀸󰀸1.0VDS = 24V, VGS = 0V󰀸󰀸󰀸󰀸󰀸󰀸25VDS = 24V, VGS = 0V, TJ = 125°CGate-to-Source Forward Leakage󰀸󰀸󰀸󰀸󰀸󰀸-100VGS = -20V Gate-to-Source Reverse Leakage󰀸󰀸󰀸󰀸󰀸󰀸100VGS = 20VQgTotal Gate Charge󰀸󰀸󰀸3.35.0ID = 0.91AQgsGate-to-Source Charge󰀸󰀸󰀸0.480.72nCVDS = 24VQgdGate-to-Drain ("Miller") Charge󰀸󰀸󰀸1.11.7VGS = 10V, See Fig. 6 and 9 󰀄td(on)Turn-On Delay Time󰀸󰀸󰀸3.9󰀸󰀸󰀸VDD = 15VtrRise Time󰀸󰀸󰀸4.0󰀸󰀸󰀸ID = 0.91Atd(off)Turn-Off Delay Time󰀸󰀸󰀸9.0󰀸󰀸󰀸RG = 6.2ΩtfFall Time󰀸󰀸󰀸1.7󰀸󰀸󰀸RD = 16Ω, See Fig. 10 󰀄CissInput Capacitance󰀸󰀸󰀸85󰀸󰀸󰀸VGS = 0VCossOutput Capacitance󰀸󰀸󰀸34󰀸󰀸󰀸pFVDS = 25VCrssReverse Transfer Capacitance󰀸󰀸󰀸15󰀸󰀸󰀸󰁃 = 1.0MHz, See Fig. 5ΩµAnAnsIGSSIDSSDrain-to-Source Leakage CurrentRDS(on)Static Drain-to-Source On-ResistanceElectrical Characteristics @ TJ = 25°C (unless otherwise specified)

ParameterMin.Typ.Max.Units ConditionsISContinuous Source CurrentMOSFET symbol(Body Diode)showing theISMPulsed Source Currentintegral reverse(Body Diode) 󰀂p-n junction diode.VSDDiode Forward Voltage󰀸󰀸󰀸󰀸󰀸󰀸1.2VTJ = 25°C, IS = 0.91A, VGS = 0V 󰀄trrReverse Recovery Time󰀸󰀸󰀸2640nsTJ = 25°C, IF = 0.91AQrrReverse RecoveryCharge󰀸󰀸󰀸2232nCdi/dt = 100A/µs 󰀄Source-Drain Ratings and CharacteristicsA󰀸󰀸󰀸󰀸󰀸󰀸7.3󰀸󰀸󰀸󰀸󰀸󰀸0.54SDG

󰀂 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )󰀃ISD ≤ 0.91A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°CNotes:󰀄 Pulse width ≤ 300µs; duty cycle ≤ 2%.󰀁 Surface mounted on FR-4 board, t ≤ 5sec.IRLML2803

Fig 4. Normalized On-ResistanceVs. TemperatureFig 1. Typical Output CharacteristicsFig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics0.1110

0.1110

20µs PULSE WIDTH󰀀 T = 25°CAJDSV , Drain-to-Source Voltage (V) 3.0V VGS󰀀 TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0VDI , Drain-to-Source Current (A)

0.1110

0.1110

ADSV , Drain-to-Source Voltage (V)DI , Drain-to-Source Current (A)

20µs PULSE WIDTH󰀀 T = 150°CJ 3.0V VGS󰀀 TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V

0.00.51.01.52.0

-60-40-20020406080100120140160JT , Junction Temperature (°C)R , Drain-to-Source On Resistance

DS(on)(Normalized) V = 10V󰀀GSA󰀀I = 0.91AD

0.1110

3.03.54.04.55.05.56.0

6.5T = 25°CT = 150°CJJ

GSV , Gate-to-Source Voltage (V)DI , Drain-to-Source Current (A)

A V = 10V 20µs PULSE WIDTH󰀀DSIRLML2803

Fig 7. Typical Source-Drain DiodeForward VoltageFig 5. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 8. Maximum Safe Operating AreaFig 6. Typical Gate Charge Vs.Gate-to-Source Voltage020406080100120140160

110100C, Capacitance (pF)

DSV , Drain-to-Source Voltage (V)AV = 0V, f = 1MHzC = C + C , C SHORTEDC = CC = C + CGSiss gs gd dsrss gdoss ds gdC󰀀issC󰀀ossC󰀀rss048121620

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IRLML2244TRPBF;中文规格书,Datasheet资料

IRLML2244TRPBF;中文规格书,Datasheet资料

1/24/11IRLML2244TRPbFHEXFET® Power MOSFETPD - 97631

1ORDERING INFORMATION:See detailed ordering and shipping information on the last page of this data sheet.Notes 󰀂 through 󰀃 are on page 10Micro3TM (SOT-23)IRLML2244TRPbFFeatures and BenefitsFeaturesBenefitsSG12D3Application(s)• System/Load SwitchLow RDS(on) ( ≤ 54mΩ)Lower switching lossesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results inEasier manufacturingRoHS compliant containing no lead, no bromide and no halogen ⇒Environmentally friendlyMSL1, Consumer qualification Increased reliabilityVDS-20VVGS Max± 12VRDS(on) max (@VGS = -4.5V)54mΩRDS(on) max (@VGS = -2.5V)95mΩ

Absolute Maximum RatingsSymbolParameterUnitsVDSDrain-Source VoltageVID @ TA = 25°CContinuous Drain Current, VGS @ -4.5VID @ TA = 70°CContinuous Drain Current, VGS @ -4.5VIDMPulsed Drain Current PD @TA = 25°CMaximum Power Dissipation PD @TA = 70°CMaximum Power Dissipation Linear Derating FactorW/°CVGSGate-to-Source VoltageVTJ, TSTGJunction and Storage Temperature Range°CThermal ResistanceSymbolParameterTyp.Max.UnitsRθJA Junction-to-Ambient e–––100RθJA Junction-to-Ambient (t<10s) f–––99Max.-4.3-3.4-55 to + 150 ± 120.01-201.30.8-18W°C/WA

贴片三极管丝印型号对照手册

贴片三极管丝印型号对照手册

创作编号：GB8878185555334563BT9125XW

创作者： 凤呜大王*

Codes / Markings SMD codes

1st character/以第一个字符为基准

0 1 2 3 4

5 6 7 8 9

A B C D E

F G H I J

K L M N O

P Q R S T

U V W X Y

Z

Code Device Manufacturer Base Package Leaded Equivalent/Data

0 2SC3603 Nec CX SOT173 Npn RF fT 7GHz

005 SSTPAD5 Sil J - PAD-5 5pA leakage diode

p01 PDTA143ET Phi N SOT23 pnp dtr 4k7+4k7

t01 PDTA143ET Phi N SOT23 pnp dtr 4k7+4k7

01 Gali-1 MC AZ SOT89 DC-8GHz MMIC amp 12dB gain

010 SSTPAD10 Sil J - PAD-10 10pA leakage diode

011 SO2369R SGS R SOT23R 2N2369

02 BST82 Phi M - n-ch mosfet 80V 175mA

02 MRF5711L Mot X SOT143 npn RF MRF571

02 DTCC114T Roh N - 50V 100mA npn sw + 10k base res

02 Gali-2 MC AZ SOT89 DC-8GHz MMIC amp 16dB gain

p02 PDTC143ET Phi N SOT23 npn 4k7+4k7 bias res

t02 PDTC143ET Phi N SOT23 npn 4k7+4k7 bias res

SC1185中文资料

SC1185中文资料

PROGRAMMABLE SYNCHRONOUS DC/DC

CONVERTER, DUAL LOW DROPOUT

REGULATOR CONTROLLER

© 1999 SEMTECH CORP.PRELIMINARY - January 6, 1999

652 MITCHELL ROAD NEWBURY PARK CA 91320SC1185SC1185A

1DESCRIPTION

The SC1185 combines a synchronous voltage modecontroller with two low-dropout linear regulatorsproviding most of the circuitry necessary toimplement three DC/DC converters for poweringadvanced microprocessors such as Pentium® II .

The SC1185 switching section features an integrated5 bit D/A converter, pulse by pulse current limiting,integrated power good signaling, and logic compatibleshutdown. The SC1185 switching section operates ata fixed frequency of 140kHz, providing an optimumcompromise between size, efficiency and cost in theintended application areas. The integrated D/A con-verter provides programmability of output voltagefrom 2.0V to 3.5V in 100mV increments and 1.30V to2.05V in 50mV increments with no external compo-nents.

IRLML5203中文资料

IRLML5203中文资料

ParameterMax.Units

VDSDrain- Source Voltage-30

V

ID @ TA = 25°CContinuous Drain Current, VGS @ -10V-3.0

ID @ TA= 70°CContinuous Drain Current, VGS @ -10V-2.4A

IDMPulsed Drain Current 󰂁-24

PD @TA = 25°CPower Dissipation1.25

PD @TA = 70°CPower Dissipation0.80

Linear Derating Factor10mW/°C

VGSGate-to-Source Voltage ± 20V

TJ, TSTGJunction and Storage Temperature Range-55 to + 150°C

8/28/00ParameterMax.Units

RθJAMaximum Junction-to-Ambient󰂃100°C/WThermal ResistanceAbsolute Maximum Ratings

W

1IRLML5203HEXFET® Power MOSFET

These P-channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This

benefit provides the designer with an extremely efficient

device for use in battery and load management

applications.

A thermally enhanced large pad leadframe has been