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IRF840

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IRF840B/IRFS840BIRF840B/IRFS840B(Note 4)(Note 4, 5)(Note 4, 5) (Note 4)Electrical Characteristics T C= 25°C unless otherwise notedNotes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 9.0mH, I AS = 8.0A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 8.0A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%5. Essentially independent of operating temperatureSymbol Parameter Test Conditions Min Typ Max UnitsOff CharacteristicsBV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 µA500----V ∆BV DSS / ∆T J Breakdown Voltage Temperature CoefficientI D = 250 µA, Referenced to 25°C --0.55--V/°C I DSS Zero Gate Voltage Drain Current V DS = 500 V, V GS = 0 V ----10µA V DS = 400 V, T C = 125°C ----100µA I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, V DS = 0 V ----100nA I GSSRGate-Body Leakage Current, ReverseV GS = -30 V, V DS = 0 V-----100nAOn CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA 2.0-- 4.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 4.0 A --0.650.8Ωg FSForward TransconductanceV DS = 40 V, I D = 4.0 A--7.3--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz--14001800pF C oss Output Capacitance--145190pF C rssReverse Transfer Capacitance--3545pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 250 V, I D = 8.0 A,R G = 25 Ω--2255ns t r Turn-On Rise Time --65140ns t d(off)Turn-Off Delay Time --125260ns t f Turn-Off Fall Time --75160ns Q g Total Gate Charge V DS = 400 V, I D = 8.0 A,V GS = 10 V--4153nC Q gs Gate-Source Charge -- 6.5--nC Q gdGate-Drain Charge--17--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----8.0A I SM Maximum Pulsed Drain-Source Diode Forward Current----32A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 8.0 A ---- 1.4V t rr Reverse Recovery Time V GS = 0 V, I S = 8.0 A,dI F / dt = 100 A/µs--390--ns Q rrReverse Recovery Charge-- 4.2--µCIRF840B/IRFS840BIRF840B/IRFS840BIRF840B/IRFS840BIRF840B/IRFS840BIRF840B/IRFS840BIRF840B/IRFS840BIRF840B/IRFS840BDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.STAR*POWER is used under licenseACEx™Bottomless™CoolFET™CROSSVOLT ™DenseTrench™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™SLIENT SWITCHER ®SMART START™STAR*POWER™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TruTranslation™TinyLogic™UHC™UltraFET ®VCX™。

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IRF840中文资料_数据手册_参数

IRF840中文资料_数据手册_参数


tf
Turn-off fall time
VDD = 250 V; RD = 30 Ω; RG = 9.1 Ω
Ld
Internal drain inductance Measured from tab to centre of die
Ld
Internal drain inductance Measured from drain lead to centre of die
CONDITIONS in free air
MIN. TYP. MAX. UNIT
-
- 0.85 K/W
- 60 - K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER
CONDITIONS
SYMBOL PARAMETER
CONDITIONS
EAS EAR IAS, IAR
Non-repetitive avalanche energy
Unclamped inductive load, IAS = 7.4 A; tp = 0.22 ms; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer to fig:17
MIN.
- 55
MAX.
500 500 ± 30 8.5 5.4 34 147 150
UNIT
V V V A A A W ˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
IRF840B参数

IRF840B参数

Power MOSFETIRF840, SiHF840Vishay SiliconixFEATURES•Dynamic dV/dt Rating •Repetitive Avalanche Rated •Fast Switching •Ease of Paralleling •Simple Drive Requirements •Lead (Pb)-free AvailableDESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.V DD = 50 V, starting T J = 25 °C, L = 14 mH, R G = 25 Ω, I AS = 8.0 A (see fig. 12).c.I SD ≤ 8.0 A, dI/dt ≤ 100 A/µs, V DD ≤ V DS , T J ≤ 150 °C.d. 1.6 mm from case.PRODUCT SUMMARYV DS (V)500R DS(on) (Ω)V GS = 10 V0.85Q g (Max.) (nC)63Q gs (nC)9.3Q gd (nC)32ConfigurationSingleTO-220GDSORDERING INFORMATIONPackage TO-220Lead (Pb)-free IRF840PbF SiHF840-E3 SnPbIRF840SiHF840ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise notedARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS500VGate-Source Voltage V GS ± 20 V Continuous Drain Current V GS at 10 VT C = 25 °C I D8.0A T C = 100 °C5.1Pulsed Drain Current a I DM 32Linear Derating Factor1.0W/°C Single Pulse Avalanche Energy b E AS 510mJ Repetitive Avalanche Current a I AR 8.0 A Repetitive Avalanche Energy a E AR 13mJ Maximum Power Dissipation T C = 25 °CP D 125WPeak Diode Recovery dV/dt cdV/dt 3.5V/ns Operating Junction and Storage Temperature Range T J , T stg- 55 to + 150°C Soldering Recommendations (Peak Temperature)for 10 s 300d Mounting Torque6-32 or M3 screw10 lbf · in 1.1N · m * Pb containing terminations are not RoHS compliant, exemptions may applyIRF840, SiHF840Vishay SiliconixNotesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.THERMAL RESISTANCE RATINGSARAMETER SYMBOL TY.MAX.UNITMaximum Junction-to-Ambient R thJA -62°C/W Case-to-Sink, Flat, Greased Surface R thCS 0.50-Maximum Junction-to-Case (Drain)R thJC- 1.0IRF840, SiHF840Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise notedFig. 1 - Typical Output Characteristics, T C = 25 °C Fig. 2 - Typical Output Characteristics, T C = 150 °CFig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. TemperatureIRF840, SiHF840 Vishay SiliconixFig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating AreaIRF840, SiHF840Vishay SiliconixFig. 9 - Maximum Drain Current vs. Case TemperatureFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsIRF840, SiHF840Vishay SiliconixFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test CircuitIRF840, SiHF840Vishay Siliconix Array Fig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see /ppg?91070.Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.。

IRF840

IRF840

１）V DS:最大工作电压５００v
.２）V DG(20KΩ)耐压５００Ｖ。

３）ＶGS 栅源电压正负２０Ｖ
４）ＩＤ２５度时８Ａ,１ＯＯ度时５．１Ａ
５）ＩＤＭ最大工作电流３２Ａ
６）Ｐtot 温度２５度时峰值功率１２５Ｗ
７）Ｄv/Ｄt 二极管恢复电压峰值斜率3.5v/ns
８）工作温度范围－６５－－－－１５０度
9)R DS D---S静态导通电阻0.85欧
要使增强型N沟道MOSFET工作，要在G、S之间加正电压VGS及在D、S之间加正电压VDS，则产生正向工作电流ID。

改变VGS的电压可控制工作电流ID
MOSFET全称功率场效应晶体管。

它的三个极分别是源极(S)、漏极(D)和栅极(G)。

主要优点：热稳定性好、安全工作区大。

缺点：击穿电压低，工作电流小。

IGBT全称绝缘栅双极晶体管，是MOSFET和GTR(功率晶管)相结合的产物。

它的三个极分别是集电极(C)、发射极(E)和栅极(G)。

特点：击穿电压可达1200V，集电极最大饱和电流已超过1500A。

由IGBT 作为逆变器件的变频器的容量达250kVA以上，工作频率可达20kHz。

系列型号

系列型号

我司长期向生产开关电源，UPS电源，控制器，充电器，适配器，逆变器，电焊机设备，电磁炉，照明，LED，工防，通信等提供相关电子元器件的销售商之一系列场效应管（MOS）：IRF740，IRF730（电压：400V）IRF840，IRF830，5N50，9N50，13N50，18N50，24N50，28N50，IRFP450，IRFP460 （电压：500V）1N60，2N60，3N60，4N60，5N60，7N60，8N60，10N60，11N60，12N60（电压：600V）3N80,4N80，5N80，6N80，7N80，8N80 （电压：800V）4N90，5N90，7N90，9N90，11N90（电压：900V）开关电源用的场效应管：IRF740，IRF730IRF840，IRF830，5N50，9N50，13N50，18N50，24N50，28N50，IRFP450，IRFP460 4N60，5N60，7N60，8N60，10N60，11N60，12N60，3N80,4N80，5N80，6N80，7N80，8N80UPS电源用场效应管：4N90，5N90，7N90，9N90，11N90，SSH70N10，IKW75N60T，IKW50N60T电动单车控制器：STP75NF75，STP60NF06，IRF3205，IRF1010镇流器：IRF740，IRF730，IRF840，IRF830，IRFP150，IRFP250，IRFP450，IRFP460 焊机设备用IGBT场效应：FGL60N100BNTD，2SK2611，D92-02，FQA9N90电磁炉和变频器：FGA25N120ANTD，FGA15N120ANTDLED照明：4N60，5N60，7N60，8N60，3N80，6N80，7N80充电器：1N60，2N60长期供应ON系列快恢复二极管：MUR160,MUR460,MUR860,MUR1560,MUR1620,MUR1660,MUR3040,MUR3060 ,MUR8100ST 系列：VIPER12A，VIPER22A，VIPER12ASTR，VIPER22ASTR，VIPER53，STP75NF75，STP60NF06，STP55NF06，STP65NF06，STP75NF68，STP80NF70，STP140NF75，XL0840MA，BTA41-600B，STPS3045CW，STW34NB20，2N3055，MJ2955，X00619MA，Z00607MA，P0118DA，LM317T，Z0409MF，X0405MF，201，TIP142，ST13005A，TIP147，ST13007A，TIP35C,BUL128A，TIP36C，BUL39D，TIP127，TYN616，TIP3055，TYN412，TIP2955，TYN612，BTB04-600SL，2N3055，BTA06-600C，MJ2955，BTA08-600C，L78L05，BTA12-600B，L78L12，BTA16-600B，L78L09，BTA26-600B，L78L08，BTA41-600B，DB3，VIPER12AS13TR，L7805，L7812，L7806，L7809，L7815，L7824，L7905，L7912，L7915，ADIP，L7809，LM358N，L7815，LM339DT，L7824，LM358DT，STW13009，STPS30H100CW，L6561N，L6562N，L6562DTR，STP4NK60ZFP，STP6NKZFP，L78M05CDTR，L78M08CDTR，TDA2004R，TDA2005R，TDA2003V，TDA2030AV，TDA2050V，TDA2822M，TDA2050V……FSC 系列：FQPF5N60C，FQPF8N60C，FQPF8N80C，FQPF10N60C，FQPF12N60C，IRF630B，IRF640B，IRF840B，FQPF2N60C，FQP5N60C，FQPF5N60C，FQPF50N06，FGA15N120ANTDTU，FGA25N120ANTDTU，H11A817B，H11A817C，IN4148TA，BU406，FQPF8N60C，FJP5027R，FQPF10N60，FJP3303H1，FQP5N60C，FJP3303H2，KSE13003H1/H2，FQP6N80C，FJP3005H1，FJP3305H2，FJP13005H2，KSE13005H1，FJP13007H1，FJP13007H2，KA5L0380RYDTU，FJP13009H2，KA1L0380RYDTU，KA5M0265RYDTU，KA5M02659，KA5M0365RYDTU.......NXP系列：BT169D，BT131-600，BT134-600E，BT136-600E，BT137-600E，BT138-600E，BT139-600E，MAC97A6，MAC97A8，BT151-500R，BT151-500C........IR 系列：IRFP054N，IRFP064N，IRFP140N，IRFP150NPBF，IRFP250NPBF，IRFP260N，IRFP264NPBF，IRFP350PBF，IRFP450，IRFP460，IRFP460A，IRFP460PBF，IRFP2907，IRFP3710，IRF530NPBF，IRF540NPBF，IRF630N，IRF640NPBF，IRF730，IRF740PBF，IRF840PBF，IRF1010EPBF，IRF2807PBF，IRF3205PBF，IRF3710PBF，IRF4905，IRF9530NPBF，IRF9540NPBF，IRF9640NPBF，IRF9Z24NPBF，IRF9Z34NPBF，IRFZ44NPBF，IRFZ44VPBF，IRFZ46NPBF，IRFZ48NPBF，IRF1404PBF，IRF1405……COSMO系列：K1010，KP5010，KP1020，KP6010，KP1040，KP7010，K2010(4N35)，KP7110，K3010，KPC6N135，KP3020，KPC6N136，KP3040，3104，KP4010，KPC6N139，KP4040，KPC357NT，KPC4N33，KPC355NT，KPC452，KMOC3043，KAQY210，KMOC3061，KCP1017，KMOC3062，KPS2801，KMOC3063，KPS2805，KMOC3081，KMOC3021，KMOC3082，KMOC3022，KMOC3083，KMOC3023，KPC354NT，KMOC3041，KMOC3042........TOSHIBA系列：TLP181-GB，TLP521-1G，TLP521-2GB，TLP521-4GB，TLP621-1GB，TLP627-1GB，TLP250，2SC1815Y，2SC1815GR，2SA1015Y，2SA1015GR.......光耦系列：夏普PC817B，夏普PC817C…亿光TL817A，亿光TL817B，亿光TL817C…光宝LTV817B光宝LTV817C.....COSMO，K1010B(817B)，COSMO，K1010C(817C)……TI系列：TL431ACP，LM358，CD4053，LM324，CD4060，LM339，74LS164，CD4066，CD4013，CD4093，CD4017，CD4094，CD4052，CD4541 .......东芝系列：TLP181-GB，TLP521-1GB，TLP521-2GB，TLP521-4GB，TLP621-1GB，TLP627-1GB，TLP250……WS系列：WS62256LLPG-70，WS6264LLP-70，WS78L05，WS78L06，WS78L08，WS78L09，WS78L12，WS78L15，WS78L18，WS79L05，WS79L12，L78L24-WS，LM317Z-WS，WS431A，WS431AA......ONTC系列：IN4728A(3.3V)，IN4729A(3.6V)，IN4730A(3.9V)，IN4731A(4.3V)，IN4732A(4.7V)，IN4733A(5.1V)，IN4734A(5.6V)，IN4735A(6.2V)，IN4736A(6.8V)，IN4737A(7.5V)，IN4738A(8.2V)，IN4739A(9.1V)，IN4740A(10V)，IN4741A(11V)，IN4742A(12V)，IN4743A(13V)，IN4744A(15V)，IN4745A(16V)，IN4746A(18V)，IN4747A(20V)，IN4748A(22V)，IN4749A(24V)，IN4750A(27V)，IN4751A(30V)，IN4752A(33V)，IN4753A(36V)，IN4754A(39V)，N4755A(43V)，IN4756A(47V)，IN4757A(51V)，IN4758A(56V)，IN4759A(62V)，IN4760A(68V)，IN4761A(75V)，IN4762A(82V)，IN4763A(91V)，IN4764(100V)......仙童Fairchild全系列代理：供应仙童 IGBT、MOS管、超快恢复管、肖特基、三端稳压IC、光耦器、桥堆、驱动ＩＣ：光耦系列 PC817 DIP系列 4N25; 4N26; 4N33 ;4N35;全系列 6N136; 6N137全系列 MOC3021; MOC3023; MOC3060; MOC3061;MOC3041; MOC3083全系列集成IC系列 KA1L0380R; KA5L0380R; KA5L0365R ;KA1M0380R; KA5M0380R ; KA5Q1265RFYDTU KA5Q0765RT; KA1M0365R;KA1H0165RN; KA3S0680RF ; KA3S0765RF;KA3S1265RF KA3525A; KA9258D;KA9259D ;KV33V；KA3842；KA3843全系列 FS6M07652RTC ;FS6M12653RTC全系列 FSDH565; FDSM0565RN;FSD210H 系列 FSDM0365RN;FDSH0165D; FDSH0165G;FSCQ0765RT全系列 FSCQ1265RT全系列 KA7805;KA7806; KA7808; KA7809; KA7812; KA7815; KA7818; KA7824 ;KA7905全系列 KA78R05; KA78R08; KA78R09; KA78R12;全系列 TL431 KSP10; KSP13; KSP42; KSP44; KSP92; KSP94全系列 KSA733; KSA928; KSA940;KSA1013; KSB633; KSD613全系列 KA33V-TA; KA278RA05全系列 KSC945; KSC2073; KSA1011; KSA2344;KSC2335; KSC2383; KSC5027; KSC5802; KSC5803 FAJ6810D; FAJ6812;FAJ6815 系列 FGA25N120; FGA15N120 系列晶体管系列 1N4148；1N5819；SS8050；SS8550；3904；3906系列 TIP41C; TIP42C; TIP31C; TIP32C全系列 KSE13001; KSE13003; ;KSE13005; KSE13007; KSE13009全系列 KSE340; KSE350; KSE1061; KSB834; KSD880 系列场效应管系列 1N60; 2N60; 4N60; 5N60; 7N60; 8N60; 10N60; 12N60全系列 6N80;7N80; 8N80; 9N90; 13N50; 18N50; 全系列 50N06; ......AOS（应用：电池保护、MP3、MP4、机顶盒、电脑主板、显卡等）AO3055、AO3413L、AO4405、AO4408L、AO4410、AO4415、AO4419、A O4422、AO4606、AO4611、AO4702、AO4800、AO4805L、AO4824、AO4914L、AO4916、AO6405、A O6408L、AO6604、AO6605、AO6701L、AO6702、AO6800、AO6801L、AO7401L、AO7801、AOB414、AOD407、AOD452、AOP600、AOP605、AOP607…等开关电源IC（应用：普通电源、智能开关电源、大型显示器电源、液晶等）BTS7710GP、DP308P、DP408P、DP804C、FSDH0165RN、FSDH565RN、ICE3BS02G、KA1M0880B、KA2S0680BYDTU、KA2S0880YDTU、KA5H0265RC、KA5S0765RCYDTU、KA7552RN、SI-3033C、SI-8033S\...等三极管系列2SA1208、2SA1242、2SA1244、2SA1870、2SA1952、2SA2022、2SB1182、2SB1184、2SB1202…1205、2SB1412、2SB7722SC3148、2SC5706、2SC5707、2SD1802…1805、2SD1944、2SD2478、2 SD882BCW66、BD135F、BD237、BD241A、BD436、BUL903EDFP、FZT591、FZT751、FZT753、FZT949HI350、HSC3953、HSD1609、KSC35KSC5024FTU、KSD362RTU、KSD880-Y、KSD13009F、KSH50TF、KTB29 55-O、MJD340T4、MJD350T4、MJD44H11、MJF18004、PBSS5540Z、TIP31A、T IP42C、…等BT258S-800R PHILIPS 00+ SOT-252 40000可控硅BTA06-600C、BTA12-600B、BTA16-600B、BTA204S-600D、BTB24-800B、FS0204MN、S6040R、T106D1、T410-600B、X2B、X0103MN、Z0109MN、…等达林顿BDX33B、BDX34B、MJD112、MJD117、MJD122、MJD127、…等肖特基10CTQ040NS、16CTQ100S、30CPQ060、32CTQ030NS、FYP1010DN、F YP1504DN、MBR3060PT、MBRB1545CT、MBRB20100CT、MBRB2535CT、PA847C04、PBYR2040CT、PBYR2045CT、SBG1640CT-T、SBL1640CT、SBL3045PT、SR3540、STPS20L45CG、TR、YM3045N快恢复BY359X-1500、FFPF10U20DS、FFPF10U60S、HFA08PB60、HFA08TB60 S、ISL9K460P3ISL9R1560S3ST、RURP8120、STPR1020CT、STTA306B、UF1604FCT、U F1606FCT…等IGBTBTS2140-1B、GT5G103、HTG1S10N120BNS、HGTG7N60A4、HGTG7N60IRG4BC30S-STRR、ISL9V2040P3、SGD02N120精密稳压系列（ADJ 1.8、2.5V、3.3V、5V、5.2V、1-10A）过压保护AMS1082CT、ATC1085-3.3,ATC1086-3.3,LT1083,KD1084-3.3,KD1084AD J,…等1117-1.8、1117-2.5、1117-3.3、1117-5.0、1117-ADJ、…等AME1084、AME1085、AME1117、AME8815、…等CS5201、CS5204、CS5205、CS5207、CS5208、CS5210、CS5257、…等罗姆系列 BA00AST、BA033T、BA05、BA41W12ST、BA61W12ST、…等国半系列 DR2533、L4941B、LF25、LF33、LF50、LF52、LF85、LF90、KF3 3、TS431I、…等英飞凌系列 TLE4274DV33、TLE4274DV5、TLE4274GV50、TLE4274GV85、TLE4274V50、…等NEC系列 UPC2905、UPC2918、UPC2925、UPC2926、UPC2933、UPC29 M08、UPC29M33、…等三端稳压 H7805、H7809、H7812、HJ78M12、KA278RA05TU、KA78R33TU、PQ12RD8S、…等MOS管，广泛应用于电池充电器，普通电源，智能开关电源（DIP）场效应：30V-80V：FDP6676、FDU6680、IRLU3103、IRLU7821、I SL9N312AD3、STP55NF06、STP60NF06、STP65NF06、...等（DIP）场效应：100V-400V:IRFB4310 2SK1101=2SK2952、FDP3652、FS2 0KM-5、IRF630、IRFS640B。