SI7850DP
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FEATURES
DTrenchFETr Power MOSFET
DNew Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
DPWM Optimized for Fast Switching
APPLICATIONS
DPrimary Side Switch for 24-V DC/DC Applications
D
Secondary Synchronous RectifierSi7850DP
Vishay SiliconixNew Product
Document Number: 71625
S-03828—Rev. A, 28-May-01www.vishay.com
1N-Channel 60-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V
DS (V)r
DS(on) (W)ID (A)
0.022 @ V
GS = 10 V10.3
60
0.031 @ V
GS = 4.5 V8.7
1
2
3
4
5678S
S
S
G
D
D
D
D6.15 mm5.15 mmPowerPAKt SO-8
Bottom ViewN-Channel MOSFETGD
SABSOLUTE MAXIMUM RATINGS (T
A = 25_C UNLESS OTHERWISE NOTED)
ParameterSymbol10 secsSteady StateUnit
Drain-Source VoltageV
DS60
Gate-Source VoltageV
GS"20V
T
A = 25_C10.36.2
Continuous Drain Current (T
J = 150_C)aT
A = 85_CI
D
7.54.5
Continuous Source CurrentI
S3.71.5A
Pulsed Drain CurrentI
DM40
Avalanche CurrentbI
AS15
Single Avalanche EnergybE
AS11mJ
T
A = 25_C4.51.8
Maximum Power Dissipationa
T
A = 85_CP
D
2.30.9W
Operating Junction and Storage Temperature RangeT
J, T
stg–55 to 150_C
THERMAL RESISTANCE RATINGS
ParameterSymbolTypicalMaximumUnit
t v 10 sec2228
Maximum Junction-to-Ambienta
Steady StateR
thJA
5870_C/W
Maximum Junction-to-Case (Drain)Steady StateR
thJC2.63.3
Notes
a.Surface Mounted on 1” x 1” FR4 Board.
b.Guaranteed by design, not subject to production testing.Si7850DP
Vishay SiliconixNew Product
www.vishay.com
2Document Number: 71625
S-03828—Rev. A, 28-May-01
MOSFET SPECIFICATIONS (T
J = 25_C UNLESS OTHERWISE NOTED)
ParameterSymbolTest ConditionMinTypMaxUnit
Static
Drain-Source Breakdown VoltageV
(BR)DSSV
GS = 0 V, I
D = 250 mA60
Gate Threshold VoltageV
GS(th)V
DS = V
GS, I
D = 250 mA1VGate-Body LeakageI
GSSV
DS = 0 V, V
GS = "20 V"100nA
V
DS = 60 V, V
GS = 0 V1
Zero Gate Voltage Drain CurrentI
DSS
V
DS = 60 V, V
GS = 0 V, T
J = 55_C20mA
On-State Drain CurrentaI
D(on)V
DS w 5 V, V
GS = 10
V40A
V
GS = 10
V, I
D = 10.3 A0.0180.022
Drain-Source On-State Resistancear
DS(on)
V
GS = 4.5 V, I
D = 8.7 A0.0250.031W
Forward Transconductanceag
fsV
DS = 15 V, I
D = 10.3 A26S
Diode Forward VoltageaV
SDI
S = 3.8 A, V
GS = 0 V0.851.2V
Dynamicb
Total Gate ChargeQ
g1827
Gate-Source ChargeQ
gsV
DS = 30 V, V
GS = 10 V, I
D = 10.3 A3.4nC
Gate-Drain ChargeQ
gd5.3
Gate-ResistanceR
G1.4W
Turn-On Delay Timet
d(on)1020
Rise Timet
rV1020
Turn-Off Delay Timet
d(off)DD = 30 V, R
L = 30 W
I
D^ 1 A, V
GEN = 10 V, R
G = 6 W2550ns
Fall Timet
f1224
Source-Drain Reverse Recovery Timet
rrI
F = 3.8 A, di/dt = 100 A/ms5080
Notes
a.Pulse test; pulse width v300 ms, duty cycle v2%.
b.Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0816243240
0123450816243240
0.00.51.01.52.02.53.0V
GS = 10 thru 5 V
25_CT
C = 150_C4 V
–55_C
3 VOutput CharacteristicsTransfer Characteristics
V
DS – Drain-to-Source Voltage (V)– Drain Current (A)
ID
V
GS – Gate-to-Source Voltage (V)– Drain Current (A)
IDSi7850DP
Vishay SiliconixNew Product
Document Number: 71625
S-03828—Rev. A, 28-May-01www.vishay.com
3TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.000.010.020.030.040.050.06
0816243240
0246810
0481216200.60.81.01.21.41.61.82.0
–50–2502550751001251500200400600800100012001400
0102030405060C
rssC
ossC
iss
V
DS = 30 V
I
D = 10.3 AV
GS = 10 V
I
D = 10.3 AV
GS = 10 V
Gate ChargeOn-Resistance vs. Drain Current
– Gate-to-Source Voltage (V)
Q
g – Total Gate Charge (nC)V
DS – Drain-to-Source Voltage (V)C – Capacitance (pF)
VGS– On-Resistance (
rDS(on)W)
I
D – Drain Current (A)Capacitance
On-Resistance vs. Junction Temperature
T
J – Junction Temperature (_C)(Normalized)
– On-Resistance (
rDS(on)W)V
GS = 4.5 V
2.02.50.000.010.020.030.040.050.06
024681011050
I
D = 10.3 A
0.000.51.01.5T
J = 25_CT
J = 150_CSource-Drain Diode Forward VoltageOn-Resistance vs. Gate-to-Source Voltage
– On-Resistance (
rDS(on)W)
V
SD – Source-to-Drain Voltage (V)V
GS – Gate-to-Source Voltage (V)– Source Current (A)
IS
