PE36542-24中文资料
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©2002 Fairchild Semiconductor CorporationRev. B, November 2002PN3642Absolute Maximum Ratings* TA=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.NOTES:1.These ratings are based on a maximum junction temperature of 150 degrees C.2.These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics TA=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%
SymbolParameterValueUnitsVCEOCollector-Emitter Voltage45V
VCBOCollector-Base Voltage60V
VEBOEmitter-Base Voltage5.0VICCollector Current- Continuous500mATJ, TSTGOperating and Storage Junction Temperature Range- 55 ~ 150°C
SymbolParameterTest ConditionMin.Max.UnitsOff CharacteristicsV(BR)CEOCollector-Emitter Breakdown Voltage *IC = 10mA, IB = 045VV(BR)CBOCollector-Base Breakdown VoltageIC = 10µA, IE = 060VV(BR)EBOEmitter-Base Breakdown VoltageIE = 10µA, IC = 05.0VICESCollector Cut-off CurrentVCB = 50V, IE = 0VCB = 50V, IE = 0, TA = 65°C501.0nAµA