KIA6282K中文资料

θJA (oC/W) θJC (oC/W)
CERDIP Package. . . . . . . . . . . . . . . . . 115
45
PDIP Package . . . . . . . . . . . . . . . . . . . 100
N/A
SOIC Package . . . . . . . . . . . . . . . . . . . 190
N/A
Maximum Power Dissipation (Any One Transistor) . . . . . . . 500mW Maximum Junction Temperature (Ceramic Package) . . . . . . . . .175oC Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
CA3082
CA3082M (3082)
CA3082M96 (3082)
-55 to 125 16 Ld SOIC
M16.15
-55 to 125 16 Ld PDIP -55 to 125 16 Ld SOIC
E16.3 M16.15
-55 to 125 16 Ld SOIC Tape M16.15 and Reel
V(BR)CBO V(BR)CIO V(BR)CEO V(BR)EBO

Document Number 83504 Rev. A4, 13–Sep–99
www.vishay.de • FaxBack +1-408-970-5600 3 (9)
元器件交易网
K3010P(G) Series
Vishay Telefunken
IF
yI
FT
95 10814
according to VDE 0884, table 2, suitable for: Monitors, air conditioners, line switches, solid state relays, microwaves.
~
6 5
~
4
VDE Standards
These couplers perform safety functions according to the following equipment standards:
file number E-76222
D VDE 0884, Certificate number 94778
VDE 0884 related features:
D Rated impulse voltage (transient overvoltage)
VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)
Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection D IFT offered in 3 groups D Coupling System C

This version: Jul. 1998GENERAL DESCRIPTIONThe KGF1322, housed in a ceramic package with integrated heat sink, is a discrete UHF-band power FET that features high efficiency, high output power, and low current operation. The K GF1322 specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz;external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 33 dBm), and low thermal resistance, the K GF1322 is ideal as a transmitter-final-stage amplifier for personal handy phones, such as digital cellular phones.FEATURES•High output power: 33 dBm (min.)•High efficiency: 60% (min.)•Low thermal resistance: 12°C/W (typ.)•Package: 3PHTPPACKAGE DIMENSIONSKGF1322Power FET (Ceramic Package Type)E2Q0040-38-71KGF1322¡ electronic components CIRCUITMARKINGKGF1322¡ electronic components ABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS*1Condition: f = 850 MHz, V DS = 5.8 V, I DSQ = 240 mAItemV DS Symbol Condition Max.Unit Drain-source voltage Gate-source voltage Total power dissipation Channel temperature V GS P tot T ch Ta = 25°C —100.45150V V W °C Storage temperatureT stg—125°CMin.—–6.0——–45Ta = Tc = 25°CTa = 25°C Drain current I DS Ta = 25°C 3A —ItemP O Symbol Condition Max.Unit Output power —dBm —Min.33.060(*1), P IN = 22 dBm Typ.——Drain efficiency h D (*1), P IN = 22 dBm %(Ta = 25°C)Thermal resistanceR th°C/W——12Channel to caseV GS(off)Gate-source cut-off voltage –2.6V –3.6V DS = 3 V, I DS = 4 mA —I DSS Drain current—A 2.0V DS = 1.5 V, V GS = 0 V —I DS(off)Drain-source leakage current 1.5mA —V DS = 10 V, V GS = –6 V —I GDO Gate-drain leakage current 0.5mA —V GD = –16 V—I GSS Gate-source leakage current 0.1mA —V GS = –6 V —KGF1322¡ electronic componentsRF CHARACTERISTICSKGF1322¡ electronic componentsTypical S ParametersFreq(MHz)500.0MAG(S11)ANG(S11)MAG(S21)ANG(S21)MAG(S12)ANG(S12)MAG(S22)ANG(S22)V DS = 5.8 V, I DS = 240 mA600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.00.9410.9390.9390.9370.9370.9350.9330.9320.9300.9300.9260.9250.9200.9210.9150.9160.9130.9090.9070.9040.9030.9000.8970.8950.8910.887–151.20–157.04–161.53–165.06–167.96–170.53–172.69–174.68–176.46–178.20–179.81178.70177.39175.86174.46173.22171.70170.64169.24167.93166.79165.54164.25163.01161.64160.493.9453.3252.8782.5422.2732.0521.8691.7311.6021.5011.4061.3221.2561.1811.1321.0771.0360.9920.9530.9180.8870.8530.8300.7990.7810.75595.2990.9686.9180.5377.5075.0472.2670.0267.3164.9962.6260.3458.2953.6951.7249.3747.6145.1843.4741.0739.3937.4235.1633.630.0320.0330.0340.0350.0350.0360.0370.0380.0380.0390.0400.0410.0420.0430.0440.0450.0460.0470.0480.0490.0510.0510.0530.0530.0540.05324.3823.3322.9022.8623.3323.1423.6323.8124.5224.2624.9625.0625.4025.5725.3425.6325.7025.3525.7225.1625.1724.4023.7323.1021.9622.010.6970.6990.7020.7020.7040.7020.7030.7030.7030.7020.7020.7000.7010.6980.6980.6980.6960.6960.6930.6930.6860.6890.6850.6880.6860.693–176.88–178.02–178.91–179.73179.81178.93178.55177.88177.60176.77176.48175.79175.46174.77174.66173.77173.63172.90172.71172.00171.74171.27171.07170.79170.71170.5455.9383.63¡ electronic componentsKGF1322 Typical S Parameters。

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ISO-9001 CERTIFIED BY DSCC
162/163 ULTRA HIGH VOLTAGE
OPERATIONAL AMPLIFIER
M.S.KENNEDY CORP.
4707 Dey Road Liverpool, N.Y. 13088
(315) 701-6751
○
RTH Thermal Resistance (DC)
Junction to Case ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 10°C/W
ELECTRICAL SPECIFICATIONS
Parameter
STATIC Supply Voltage Range 2 4 9
Quiescent Current
Test Conditions 1
Group A MSK162B/163B
MSK162/163
Subgroup Min. Typ. Max. Min. Typ. Max.
Units
VIN=0V
-
±50 ±150 ±175 ±50 ±150 ±175 V
1
- ±1.4 ±2.0 - ±1.4 ±2.0 mA
162 (see mechanical specifications). If the application calls for a gain of less than 10 V/V, refer to the MSK 158/159 data sheet.
EQUIVALENT SCHEMATIC
Input Voltage (Differential)
±16V
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