1N5418-BYW172G中文资料
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1N5417/ 1N5418
Document Number 86097
Rev. 1.3, 13-Apr-05Vishay Semiconductors
www.vishay.com
1949588Fast Avalanche Sinterglass Diode
Features
•Glass passivated junction
•Hermetically sealed package
•Soft recovery characteristics
•Low reverse current
•Low forward voltage drop
•High pulse current capability
•Lead (Pb)-free component
•Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Fast rectification diodeMechanical Data
Case: SOD-64 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 858 mg
Parts Table
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
Maximum Thermal Resistance
Tamb = 25°C, unless otherwise specifiedPartT
ype differentiationPackage
1N5417VR = 200 V; IFAV = 3 ASOD-64
1N5418VR = 400 V; IFAV = 3 ASOD-64
ParameterTest conditionPartSymbolValueUnit
Maximum repetitive peak reverse voltagesee electrical characteristics1N5417VR = VRRM200V
1N5418VR = VRRM400V
Maximum average forward rectified currentIF(AV)3.0A
Peak forward surge current10 ms single half sine-waveIFSM100A
Non repetitive reverse avalanche energyI(BR)R = 1 AER20mJ
ParameterTest conditionSymbolValueUnit
Junction ambientl = 10 mm, TL = constantRthJA25K/W
on PC board with spacing 25 mmRthJA70K/W
Operating junction and storage temperature rangeTJ, TSTG- 55 to + 175°Ce2元器件交易网www.cecb2b.comwww.vishay.com
2Document Number 86097
Rev. 1.3, 13-Apr-051N5417/ 1N5418
Vishay Semiconductors
Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)ParameterTest conditionSymbolMinTyp.MaxUnit
Maximum instantaneous forward voltageIF = 3 AVF1.10V
IF = 9 AVF1.50V
Reverse currentVR = VRRMIR1.0µA
VR = VRRM, Tj = 100°CIR20µA
Maximum reverse recovery timeIF = 0.5 A, IR = 1.0 A, Irr = 0.25 Atrr75100ns
Figure1. Max. Thermal Resistance vs. Lead Length
Figure2. Forward Current vs. Forward Voltage010203040
949466ll
TL=constant
R-Therm.Resist.Junction/Ambient(K/W)
thJA0
l-LeadLength(mm)51015253020
I-ForwardCurrent(A)
0.0010.010.1110100
00.51.01.52.02.5
VF-ForwardVoltage(V)16387FTj=25°CTj=175°CFigure3. Max. Average Forward Current vs. Ambient Temperature
Figure
4. Reverse Current vs. Junction Temperature16388I-AverageForwardCurrent(A)
FAV020406080100120140160180
Tamb-AmbientTemperature(°C)3.5
3.0
2.5
2.0
1.5
1.0
0.5
0VR=VRRMhalfsinewave
RthJA=25K/Wl=10mm
RthJA=70K/WPCB:d=25mm
1101001000
255075100125150175
Tj-JunctionTemperature(°C)16389VR=VRRM
I-ReverseCurrent(µA)
R元器件交易网www.cecb2b.com1N5417/ 1N5418
Document Number 86097
Rev. 1.3, 13-Apr-05Vishay Semiconductors
www.vishay.com
3Package Dimensions in mm (Inches)Figure5. Max. Reverse Power Dissipation vs. Junction Temperature020406080100120140160180
255075100125150175
Tj-JunctionTemperature(°C)16390VR=VRRM
P-ReversePowerDissipation(mW)
RPR-Limit@100%VR
PR-Limit@80%VR
Figure
6. Diode Capacitance vs. Reverse Voltage020406080100120
0.1110100
VR-ReverseVoltage(V)16391C-DiodeCapacitance(pF)
Df=1MHz
Figure7. Thermal Response
1101001000
Z-ThermalResistancef.PulseCond.(K/W
thp
tp-PulseLength(s)949562IFRM-RepetitivePeakForwardCurrent(A)10-410-310-210-1100101102102100101tp/T=0.05VRRM=600VRthJA=70K/W
tp/T=0.5
tp/T=0.2
tp/T=0.1
0.02
tp/T=0.01Tamb=25°C
45°C70°C
100°C
CathodeIdentification4.3(0.168)max.
1.35(0.053)max.
4.0(0.156)max.SinteredGlassCaseSOD-64
94958726(1.014)min.26(1.014)min.ISOMethodE元器件交易网www.cecb2b.comwww.vishay.com
4Document Number 86097
Rev. 1.3, 13-Apr-051N5417/ 1N5418
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1.Meet all present and future national and international statutory requirements.
2.Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
