2N5401中⽂资料_数据⼿册_参数DATA SHEETProduct speci?cationSupersedes data of 1997 May 221999Apr 08DISCRETE SEMICONDUCTORS2N5401PNP high-voltage transistorbook, halfpageM3D186PNP high-voltage transistor2N5401FEATURESLow current (max. 300mA)High voltage (max. 150V).APPLICATIONSGeneral purpose switching and amplification Telephony applications.DESCRIPTIONPNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complement: 2N5551.PINNING PIN DESCRIPTION1collector2base3emitterFig.1Simplified outline (TO-92; SOT54)and symbol.handbook, halfpage132MAM280123LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC134).SYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT V CBO collector-base voltage open emitter??160V V CEO collector-emitter voltage open base??150VV EBO emitter-base voltage open collector??5VI C collector current (DC)??300mAI CM peak collector current??600mAI BM peak base current??100mAP tot total power dissipation T amb≤25°C?630mWT stg storage temperature?65+150°CT j junction temperature?150°CT amb operating ambient temperature?65+150°CPNP high-voltage transistor2N5401THERMAL CHARACTERISTICS Note1.Transistor mounted on an FR4 printed-circuit board.CHARACTERISTICST amb =25°C unless otherwise speci?ed.SYMBOL PARAMETERCONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambientnote 1200K/WSYMBOL PARAMETERCONDITIONSMIN.MAX.UNIT I CBO collector cut-off current I E =0; V CB =?120V50nA I E =0; V CB =?120V; T amb =100°C 50µA I EBO emitter cut-off current I C =0; V EB =?4V50nAh FEDC current gainI C =?1mA; V CE =?5V; see Fig.250?I C =?10mA; V CE =?5V; see Fig.260240I C =?50mA; V CE =?5V; see Fig.250?V CEsat collector-emitter saturation voltage I C =?10mA; I B =?1mA200mV I C =?50mA; I B =?5mA500mV C c collector capacitance I E =i e =0; V CB =?10V; f =1MHz ?6pF f T transition frequency I C =?10mA; V CE =? 10V; f =100MHz 100300MHz Fnoise ?gureI C =?200µA; V CE =?5V; R S =2k ?;f =10Hz to 15.7kHz8pFPNP high-voltage transistor 2N5401Fig.2 DC current gain; typical values.handbook, full pagewidth015020050100MGD813101110102103h FEI C mAV CE = ?5 VPNP high-voltage transistor2N5401PACKAGE OUTLINEUNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IECJEDEC EIAJ mm5.25.0b 0.480.40c 0.450.40D 4.84.4d 1.71.4E 4.23.6L 14.512.7e 2.54e 11.27L 1(1)2.5b 10.660.56DIMENSIONS (mm are the original dimensions)Note1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. SOT54SC-4397-02-28AL0 2.5 5 mmscalebcDb 1L 1dE Plastic single-ended leaded (through hole) package; 3 leadsSOT54e 1e123PNP high-voltage transistor2N5401DEFINITIONSData sheet statusObjective speci?cation This data sheet contains target or goal speci?cations for product development. Preliminary speci? cation This data sheet contains preliminary data; supplementary data may be published later. Product speci?cation This data sheet contains ?nal product speci?cations.Limiting valuesLimiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied. Exposure to limiting values for extended periods may affect device reliability.Application informationWhere application information is given, it is advisory and does not form part of the speci?cation.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.PNP high-voltage transistor2N5401Internet: /doc/eacdd8a926d3240c844769eae009581b6ad9bdd4.htmlPhilips Semiconductors – a worldwide companyPhilips Electronics N.V. 1999SCA63All rights are reserved. 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